CN101882661B - LED microcavity structure suitable for special lighting - Google Patents
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Abstract
The invention relates to an LED micorcavity structure, in particular to an LED non-resonance microcavity structure which is suitable for special lighting. A QD-QW structure is inserted into a non-resonance microcavity with a Q-factor, and the LED micorcavity structure comprises a broadband metal reflecting mirror, a QD-QW illuminant, spacer layers and a distributed bragg reflector (DBR), can change optical mode density in a cavity as a one-dimensional PBG crystal and obviously prolongs electron-hole radiation reconstructing life in quantum wells, thereby prolonging the radiation life of the illuminant; in addition, the invention improves the conversion efficiency of non-radiating energy, realizes the preset efficiency of a white light LED and is applicable to special lighting, especially practicalization in special lighting environments such as the lighting in aerospace cabins, the special lighting for human bodies-intervening medical treatment, supplementary lighting of modern agriculture, lighting for entrapment and the like.
Description
Technical field
The present invention relates to the micro-cavity structure of a kind of LED, especially be applicable to the LED off-resonance micro-cavity structure of special lighting.
Background technology
White light emitting diode (LED) technology of existing solid luminescent mainly is based on uses high-quantum efficiency (r 〉=60%) blue light InGaN quantum well structure, lower conversion by fluorescent material, make the blue light degradation be radiated redness and green, thereby three mixture of colours produce white light.Yet the white light LEDs of employing fluorescence conversion designs remains the restriction on a lot of performances.At first, the conversion implementation exists intrinsic efficiency limitations, among others under the color of multi-step: the high-energy blue photons that InGaN quantum well LED produces must at first be absorbed by fluorescent material, then via foreign ion center auxiliary transmission, the man-to-man photon that is converted to low-yield wavelength.In this process, the portion of energy of photon can be converted to lattice vibration (producing heat) in the phosphor material powder, makes the limit quantum efficiency of white light LEDs be restricted (≤65%).Secondly; every kind of independent fluorescent material has different chemical constituents; be difficult to size, mixing and the evaporation of control particle; cause the unstable variation of light color; in addition; the fluorescent material of different chemical component has different aging behaviors, often can cause the unstable of device performance, and shorten its working life.To sum up, adopt the white light LEDs of fluorescence conversion designs and can't be applied in a lot of special applications owing to there being above-mentioned restriction, get involved the special lightings such as medical special lighting, modern agriculture light filling and trapping illumination such as Aero-Space cabin intraoral illumination, human body.
Semiconductor nano quantum dot (QDs) is applied in the white light LEDs technology recently.As a new fluorescent material family, semiconductor nano has outstanding advantageous characteristic.Because strong quantum limit, have narrow exciton absorption such as the semiconductor-quantum-point of CdSe/ (Zn, Cd) S QDs, high fluorescence efficiency (approximately 90-95%), and can regulate by size and make radiation scope cover the excellent specific properties such as total visible light wave band.Therefore, the quantum dot of identical chemical composition, different size can provide multispectral composition in white light LEDs, improve quality of colour and ageing properties.The quantum dot fluorescence powder can be injected into electron-hole pair in the quantum dot indirectly by non-contacting mode, and non-radiative energy is from a nearest InGaN quantum well (QW).This is different from previously described multistep " lower conversion " design in itself, has cancelled the switch process of some middle colors, has promoted luminous efficacy.
Result of study shows, quantum dot LED is more with the obvious advantage than the conventional LED of fluorescence conversion designs that adopts: at first, quantum dot LED illumination efficiency is high, the conversion ratio of non-radiative energy is higher than the restructuring ratio of hole-electron pair in the common LED between quantum dot-fluorescent material and InGaN photophore, makes it have low loss characteristic.Except energy transfer efficiency, quantum dot can make fluorescent material fully discharge and improves delivery efficiency at the high quantum production rate of red, yellow, and green wavelength.Secondly, quantum dot LED electroluminescence (EL) device is made by the quantum dot of film-form, can show high brightness and narrow emission performance.Especially the Monodisperse nanocrystals quantum dot can provide bandwidth very narrow narrow emission, and peak value halfwidth (fwhm) can be reduced to 8-30nm, and its colourity is more saturated.Again, quantum dot LED size has adjustability to spectral emissions, and optical characteristics can be passed through to adjust nanocrystalline size and realize, and does not rely on the change of chemical composition.Therefore, can be by nanocrystalline realization multi-wavelength emission and the wide range emission of adopting different size on same device, emission wavelength can be contained whole visible (0.4 μ m-0.8 μ m) and near-infrared region (0.8 μ m-2.5 μ m).At last, quantum dot LED has better photochemical properties and hot property stability.
Because the characteristics and advantages that quantum dot LED shows in electroluminescence (EL) makes it can be competent at the inefficient special application field of LED of aforementioned employing fluorescence conversion designs fully.Yet quantum dot LED also exists problem at present.At first, transform owing to being difficult to control quantum-dot-quantum-well non-radiative energy, be lower than the improvement (about 53%) of theory expectation based on the efficiency far of the quantum dot fluorescence powder of white light LEDs.Secondly, for the output light of the color characteristics that obtains to expect, among the LED between the multiple color quantum dot mismatch of performance be an obstacle for the balance of color quantum point glow color.And the shortage of blue coloured electroluminous composition bright, that colourity is saturated has had a strong impact on the development of quantum dot LED technology.
Can be used for controlling the direct energy conrersion between InGaN quantum well and CdSe/ (Zn, Cd) S quantum dot the radiation lifetime of GaN quantum well.As everyone knows, the radiating electron hole recombination life-span τ T in the direct semiconductor is determined by the spontaneous radiation process, can be described as by Fermi's (Fermi) gold criterion:
τ
T∝|<m>|
-2δ
(v) -1
Wherein＜m be the matrix element of optical transition, δ (v) be photon states density its be the function of frequency V.The optical transition matrix element is the intrinsic characteristic of this structure, size and composition by radiation medium (QW) determine, when photon states density during as the function of wavelength and direction, can be changed by the radiation medium of including in the resonance microcavity, thereby finally changed the radiation restructuring life-span.Adopt the calculating of above formula to show, work as τ
TExtend to 0.25ns time the 1.5ns, the energy transfer efficiency of QD-QW can improve 50%, and then advances the efficiency of color conversion of QD in the LED matrix.
The radiation lifetime of receiving brilliant reflector of Restriction of the Measuring in the polarization selectivity microcavity, the result shows that the luminescent lifetime of off-resonance polarization state is than long three times of resonance polarization state shown in Fig. 1 a and Fig. 1 b.In microcavity, when luminance changed the off-resonance pattern into from resonance mode, photon states density reduced greatly.Radiative decay also slows down because of the off-resonance state, has therefore significantly improved the radiation restructuring life-span.The Bhattacharya of U.S. University of Michigan has also obtained identical conclusion recently in the research of the nanocrystalline LED of PbSe that two-dimentional silicon photonic crystal microcavity is controlled.The reflector of nanoscale is positioned on the spilehole at microcavity center under study for action.Because light is limited in by force in the PBG crystal in the cavity that is similar to optical wavelength cube, because Purcell effect, can strongly be changed from the spontaneous radiation dynamics of QDs, further the proof micro-cavity structure can change the radiation lifetime of confined luminous element under controlled condition, and this is very crucial to the predetermined efficient that realizes white light LEDs.
Summary of the invention
The off-resonance micro-cavity structure that the purpose of this invention is to provide a kind of novel LED improves quantum-dot-quantum-well non-radiative energy transformation efficiency, and effectively prolongs the radiation lifetime of luminous element, realizes the predetermined efficient of white light LEDs.
For achieving the above object, the invention provides a kind of LED micro-cavity structure, the QD-QW structure is inserted in the off-resonance microcavity with suitable Q-factor.This micro-cavity structure from top to bottom is comprised of broadband metallic mirror, upper wall, QD-QW luminous element and lower wall and arrowband dielectric reflection film successively.
Further, described QD-QW luminous element from top to bottom is comprised of quantum dot layer, barrier layer and quantum well layer successively.
Further, described barrier layer is the GaN barrier layer.
Further, described quantum well layer is the InGaN/GaN quantum well layer.
Further, described upper wall adopts SiN.
Further, described lower wall adopts GaN.
Further, described broadband metallic mirror employing Ag.
Further, described arrowband dielectric reflection film employing SiO
2/ TiO
2
This beneficial effect of the invention is: because the QD-QW structure has been inserted in the off-resonance microcavity with suitable quantum factor, change optical mode density in the cavity, the radiation of the electron-hole restructuring life-span in the significant prolongation quantum well, and then prolonged radiation lifetime of luminous element, improved the non-radiative energy conversion efficiency, realized the predetermined efficient of white light LEDs, especially Aero-Space cabin intraoral illumination, human body are got involved the practical of the special lighting environment such as medical special lighting, modern agriculture light filling and trapping illumination to be applicable to special lighting.
Description of drawings
The present invention is further detailed explanation below in conjunction with the drawings and specific embodiments:
Fig. 1 a shows is the nanocrystalline luminous intensity decay pattern under time and the polarization state resolution in the microcavity.
What Fig. 1 b showed is microcavity element section SEM collection of illustrative plates.
Fig. 2 is structure principle chart of the present invention.
Fig. 3 a is the structure section figure of a specific embodiment of the present invention.
Fig. 3 b is that the energy in the QD-QW structure of this specific embodiment transmits schematic diagram.
Fig. 3 c is the microcavity reverberation spectrogram of this specific embodiment under burst of ultraviolel.
Wherein
1. wall 3.QD-QW luminous element on the reflector 2.
4. descend wall 5. arrowband dielectric reflection film 6.QD layers
7. barrier layer 8.QW layer
Embodiment
Shown in Fig. 3 a, Fig. 3 b and Fig. 3 c, the off-resonance microcavity is successively by wall 4 and SiO under a broadband metallic mirror (Ag) 1, the upper wall 2 of SiN, QD-QW luminous element 3, the GaN
2/ TiO
2Arrowband dielectric reflection film 5 forms, wherein QD-QW luminous element 3 comprises successively that from top to bottom QD layer 6, GaN barrier layer 7 and InGaN/GaN quantum well layer 8 form, can be used as one dimension PBG crystal and change optical mode density in the cavity, the radiation of the electron-hole restructuring life-span in the significant prolongation quantum well, thereby strengthening non-radiative energy transfers to red from the quantum well layer (QW) of blue emission, Huang is in the QD layer of green emission.Blue emission from QW can reduce, and reason is because the humidification of microcavity makes energy be transferred among the QD by QW, and the measurement by QW emission wavelength reflectivity also can obviously prove this point.Conversely, rely on the finite bandwidth of Bragg regime and not limited by cavity from the emission of QDs, therefore peak strength only has slight decline in the situation that correlation spectrum broadens.Bring up to compare with the blue radiation among the QW time when the QD luminous intensity, just can export the white light of high color rendering index (CRI) by color mixture LED.
Above embodiment only in order to technical scheme of the present invention to be described, can not limit scope of the present invention with this; The modification that the technical scheme that aforementioned each embodiment is put down in writing is carried out, perhaps be equal to replacement to what part technical characterictic wherein carried out, do not make the essence of appropriate technical solution break away from the spirit and scope of various embodiments of the present invention technical scheme, all should still belong in the scope that patent of the present invention contains.
Claims (1)
1. LED micro-cavity structure that is applicable to special lighting, it is characterized in that: quantum-dot-quantum-well (QD-QW) structure is inserted in the off-resonance microcavity with suitable Q-factor, and this micro-cavity structure comprises from top to bottom and being comprised of broadband metallic mirror, upper wall, quantum-dot-quantum-well (QD-QW) luminous element and lower wall and arrowband dielectric reflection film successively;
Described quantum-dot-quantum-well (QD-QW) luminous element from top to bottom is comprised of quantum dot layer, barrier layer and quantum well layer successively;
Described barrier layer adopts the GaN barrier layer;
Described quantum well layer adopts InGaN/GaN;
Described upper wall adopts SiN;
Described lower wall adopts GaN;
Described broadband metallic mirror adopts Ag;
Described arrowband dielectric reflection film adopts SiO
2/ TiO
2
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1320972A (en) * | 2001-05-24 | 2001-11-07 | 北京大学 | Semiconductor LED and its preparing process |
| CN1499651A (en) * | 2002-11-05 | 2004-05-26 | 炬鑫科技股份有限公司 | Method for manufacturing white light LED and illuminator |
| CN1588656A (en) * | 2004-08-11 | 2005-03-02 | 华中科技大学 | Directly ejecting white light high brightness power type LED chip |
| CN101478115A (en) * | 2009-01-22 | 2009-07-08 | 厦门大学 | Nitride distributed Bragg reflector and production process thereof |
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| US7067849B2 (en) * | 2001-07-17 | 2006-06-27 | Lg Electronics Inc. | Diode having high brightness and method thereof |
| US7915624B2 (en) * | 2006-08-06 | 2011-03-29 | Lightwave Photonics, Inc. | III-nitride light-emitting devices with one or more resonance reflectors and reflective engineered growth templates for such devices, and methods |
| CN201780988U (en) * | 2010-06-28 | 2011-03-30 | 东营市加文光电有限责任公司 | LED microcavity structure suitable for special illumination |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1320972A (en) * | 2001-05-24 | 2001-11-07 | 北京大学 | Semiconductor LED and its preparing process |
| CN1499651A (en) * | 2002-11-05 | 2004-05-26 | 炬鑫科技股份有限公司 | Method for manufacturing white light LED and illuminator |
| CN1588656A (en) * | 2004-08-11 | 2005-03-02 | 华中科技大学 | Directly ejecting white light high brightness power type LED chip |
| CN101478115A (en) * | 2009-01-22 | 2009-07-08 | 厦门大学 | Nitride distributed Bragg reflector and production process thereof |
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