CN101880869A - Film forming method and plasma film forming apparatus - Google Patents

Film forming method and plasma film forming apparatus Download PDF

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Publication number
CN101880869A
CN101880869A CN2010101745210A CN201010174521A CN101880869A CN 101880869 A CN101880869 A CN 101880869A CN 2010101745210 A CN2010101745210 A CN 2010101745210A CN 201010174521 A CN201010174521 A CN 201010174521A CN 101880869 A CN101880869 A CN 101880869A
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gas
mentioned
film
processing vessel
film forming
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山崎英亮
小堆正人
布重裕
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes

Abstract

The present invention provides a film forming method and a plasma film forming apparatus. By means of the film forming method, it is possible to improve staging cover for forming the film even though the inner diameter and width of a dent on the surface of an object to be processed are all small. In the method of forming the titanium-containing film on the object to be processed by gas reaction through a plasma CVD method, the flow rates of the raw gas and the reducing gas are set in a reactive state mode that the gas reaction is a reaction determination speed of the raw gas, wherein the object to be processed that an insulated layer (4) with the dent (6) is arranged on the surface is arranged in a processing container (22) which may be vacuumized, and the raw gas and the reducing gas containing titanium are supplied to the processing container. Thereby, even though the inner diameter and width of the dent arranged on the surface of the object to be process are small, or a rate of length and width of the dent become large, the staging cover of forming the film can be improved.

Description

Film and plasma film forming apparatus
Technical field
The present invention relates to a kind of film and plasma film forming apparatus, relate in particular to the film and the plasma film forming apparatus that form films such as blocking layer on the surface of handled objects such as semiconductor wafer.
Background technology
Usually, in order to make semiconducter device, semiconductor wafer is carried out repeatedly various processing such as film forming processing, etch processes, anneal, oxide-diffused processing and make desirable device.In addition, as the wiring material midway of the manufacturing process of semiconducter device, imbed material, mainly utilize aluminium (Al) alloy in the past, but recently since live width and aperture day by day by granular, and the high speed of expectation responsiveness is so also there is the trend of utilizing tungsten (W), copper (Cu) etc.
In addition, metallic substance such as above-mentioned Al, W, Cu as wiring material, when being used for the imbedding material and use of hole of contact, are prevented at for example silicon oxide film (SiO 2) wait between insulating material and the above-mentioned metallic substance diffusion that produces silicon, perhaps because of the purpose of the tack that improves film, perhaps, make the boundary member of blocking layer between the conductive layer of above-mentioned insulation layer and lower floor because of improving the purpose of tack between conductive layers such as the electrode of the lower floor of the bottom in hole contact and wiring layer etc.In addition, as above-mentioned blocking layer, Ta film, TaN film, Ti film, TiN film etc. are by known (patent documentation 1～5).For this point, describe with reference to Figure 13.
The process picture sheet of the film when Figure 13 is the imbedding of recess on surface of expression semiconductor wafer.Shown in Figure 13 (A), form the conductive layer 2 that becomes wiring layer for example etc. on the surface of the semiconductor wafer W that for example is made of silicon substrate etc. as handled object, the thickness with regulation forms for example by SiO on the whole surface of semiconductor wafer W in the mode that covers this conductive layer 2 2The insulation layer 4 that film etc. constitute.Above-mentioned conductive layer 2 for example is made of the silicon layer that has mixed impurity, and specifically, electrode pairs such as existence and transistor or the electric capacity situation of answering also is especially at being formed by NiSi (nisiloy) etc. under the situation of transistorized contact.
In addition, be formed with at above-mentioned insulation layer 4 and be used for above-mentioned conductive layer 2 is realized the recess 6 that the contact of the open-work that electrically contacts or through hole etc. is used.In addition, also there is the situation that forms elongated groove (groove) as above-mentioned recess 6.Become the state that exposes on the surface of the above-mentioned conductive layer 2 in the bottom of this recess 6.In addition, for the whole surface of bottom surface in comprising this recess 6 and lateral semiconductor wafer W, be that the surface of insulation layer 4 and the surface of conductive layer 2 form the blocking layer with aforesaid function, shown in Figure 13 (B), whole surface in also comprising recess 6 forms for example Ti film 8 (inner face) on the whole surface of wafer, and then on this Ti film 8, shown in Figure 13 (C), form TiN film 10, form the blocking layer 12 that the double-layer structural by above-mentioned Ti film 8 and TiN film 10 constitutes.In addition, then in order to make above-mentioned TiN film 10 become stable, by at NH 3To its heating, implement nitriding treatment in the atmosphere surrounding.
In addition, also there is the situation that does not form TiN film 10 and only constitute blocking layer 12 by Ti film 8.Above-mentioned Ti film 8 is that (Chemical Vapor Deposition: chemical vapour deposition) method forms the plasma CVD of for example handling or utilize TiCl4 by spatter film forming, and above-mentioned TiN film 10 is for example by utilizing TiCl 4The hot CVD method of gas etc. or make unstripped gas and nitriding gas replaces mobile SFD (Sequential Flow Deposition: continuous fluid deposition) method and forms.If so form blocking layer 12 then to imbedding with electro-conductive materials such as tungsten in the recess 6, then, by unnecessary electro-conductive materials of pruning such as etchings.
Patent documentation:
Patent documentation 1: Japanese kokai publication hei 11-186197 communique
Patent documentation 2: TOHKEMY 2004-232080 communique
Patent documentation 3: TOHKEMY 2003-142425 communique
Patent documentation 4: TOHKEMY 2006-148074 communique
Patent documentation 5: the flat 10-501100 communique of Japanese Unexamined Patent Application Publication
But the formation method on above-mentioned such blocking layer 12 not under the loose situation in the past of so strict design basis, can not produce such problem in live width and aperture.But the littler design basis that becomes becomes strict if granular trend further develops live width and aperture, then can produce following problem.That is,, utilize plasma CVD method to carry out film forming and handle, but this moment, with respect to unstripped gas TiCl for example as mentioned above in order to make Ti film film forming 4Gas is supplied with for example H of reducing gas in a large number 2Gas, but if live width and aperture become littler, vertical in addition wide ratio also increases, then above-mentioned raw materials gas is difficult to fully invade in the recess 6, and ladder covers (step coverage) to be reduced.Its result exists the thickness of the Ti film of the bottom be stacked into recess 6 and the sidewall in the recess to become insufficient, if it is insufficient especially to be stacked into the thickness of Ti film of bottom, and the contact resistance problem that can increase then.
For example, in Figure 13 (B), the thickness H1 of Ti film 8 that is stacked into the surface of wafer W becomes enough thick, and with respect to this, the thickness H2 that is stacked into the Ti film 8 of the bottom surface in the recess 6 becomes extremely thin, and ladder covers and descends.Especially, because the more requirement of granular, if the aperture of above-mentioned such recess is below 60nm, then above-mentioned such problem becomes significantly, has ladder covering such problem that declines to a great extent.In addition, this problem not only during the film forming of Ti film, takes place when the film forming of TiN film too.
Summary of the invention
The present invention is conceived to above such problem points, invents in order effectively to solve it.The objective of the invention is to, even little at internal diameter, the width of the surperficial formed recess of handled object, perhaps recess is vertical wide than becoming big, film and plasma film forming apparatus that the ladder in the time of also improving the film forming of film covers.
Result to making great efforts to study such as the inventor by plasma CVD method film forming Ti film, TiN film etc., obtain following idea, reaction during promptly with film forming be the reaction of unstripped gas determine speed (rate determining) thus the mode of the state flow of setting each gas improve ladder and cover, obtain the present invention thus.
The present invention of technical scheme 1 is a kind of film, in the processing vessel that can be evacuated, accommodate insulation layer and be formed on surperficial handled object with recess, and in above-mentioned processing vessel, supply with titaniferous unstripped gas of bag and reducing gas, utilize plasma CVD method to make the above-mentioned gas reaction and on above-mentioned handled object, form and wrap titaniferous film, it is characterized in that, be that the determine mode of response behaviour of speed of the reaction of above-mentioned raw materials gas is set above-mentioned raw materials gas and above-mentioned reducing gas flow separately with above-mentioned being reacted into.
Like this, in the processing vessel that can be evacuated, accommodate the insulation layer with recess be formed on the surface handled object, and in processing vessel, supply with titaniferous unstripped gas of bag and reducing gas, utilize plasma CVD method to make gas reaction and on handled object, form in the film of the titaniferous film of bag, with above-mentioned being reacted into is that the determine mode of response behaviour of speed of the reaction of above-mentioned raw materials gas is set above-mentioned raw materials gas and above-mentioned reducing gas flow separately, so, even being formed on the internal diameter and the width of the recess on handled object surface diminishes, perhaps recess is vertical wide than becoming big, and the ladder in the time of also can improving forming thin film covers.
The invention of technical scheme 2 is characterized in that according to technical scheme 1 described invention above-mentioned raw materials gas is the gas that comprises chlorine, and above-mentioned reducing gas is the hydrogenous gas of bag.
The invention of technical scheme 3. according to technical scheme 2 described inventions, it is characterized in that, set above-mentioned raw materials gas and above-mentioned reducing gas flow separately than the mode in 0.5～1.5 scope so that the ratio of the amount of chlorine atom of the environmental gas in the above-mentioned processing vessel and number of hydrogen atoms is Cl/H.
The invention of technical scheme 4 is according to technical scheme 2 described inventions, it is characterized in that, set above-mentioned raw materials gas and above-mentioned reducing gas flow separately than the mode in 0.7～1.3 scope so that the ratio of the amount of chlorine atom of the environmental gas in the above-mentioned processing vessel and number of hydrogen atoms is Cl/H.
The invention of technical scheme 5 is characterized in that according to each described invention in the technical scheme 1～4 supplying with has nitriding gas in above-mentioned processing vessel.
The invention of technical scheme 6 is characterized in that according to technical scheme 5 described inventions above-mentioned nitriding gas is a nitrogen.
The invention of technical scheme 7 is characterized in that according to each described invention in the technical scheme 1～6 internal diameter of above-mentioned recess or width are below 60nm.
The invention of technical scheme 8 is characterized in that according to each described invention in the technical scheme 1～7 above-mentioned raw materials gas is TiCl 4Gas, above-mentioned reducing gas are H 2Gas.
The invention of technical scheme 9 is a kind of plasma film forming apparatus, is formed at the insulation layer with recess and forms the titaniferous film of bag on the surperficial handled object, it is characterized in that, comprising: processing vessel, and it can be evacuated; Mounting table, its above-mentioned handled object of mounting and play a role in above-mentioned processing vessel as lower electrode; Heating arrangements, it heats above-mentioned handled object; The gas introducing mechanism, it imports the necessary all gases that comprises unstripped gas and plays a role as upper electrode in above-mentioned processing vessel; Gas supply mechanism, it supplies with above-mentioned all gases to the above-mentioned gas introducing mechanism; Plasma body forms mechanism, and it forms plasma body between above-mentioned mounting table and above-mentioned gas introducing mechanism; Control part, it is controlled and implements each described film in the claim 1～8.
The invention of technical scheme 10 is a kind of storage medias, it is characterized in that, the program of storage embodied on computer readable, when this program forms the titaniferous film of bag on the surface that utilizes plasma film forming apparatus at handled object, control above-mentioned plasma film forming apparatus and come each described film in the technical application scheme 1～7, above-mentioned plasma film forming apparatus comprises: processing vessel, and it can be evacuated; Mounting table, the insulation layer that its mounting in above-mentioned processing vessel has recess are formed on the handled object on surface and play a role as lower electrode; Heating arrangements, it heats above-mentioned handled object; The gas introducing mechanism, it imports the necessary all gases that comprises unstripped gas and plays a role as upper electrode in above-mentioned processing vessel; Gas supply mechanism, it supplies with above-mentioned all gases to the above-mentioned gas introducing mechanism; Plasma body forms mechanism, and it forms plasma body between above-mentioned mounting table and above-mentioned gas introducing mechanism; Control part is controlled whole device.
According to film of the present invention and plasma film forming apparatus, can bring into play following outstanding like this action effect.
Since in the processing vessel that can be evacuated, accommodate the insulation layer with recess be formed on the surface handled object, and in above-mentioned processing vessel, supply with titaniferous unstripped gas of bag and reducing gas, utilize plasma CVD method to make gas reaction and on handled object, form in the film of the titaniferous film of bag, the determine mode of response behaviour of speed of the reaction that becomes unstripped gas with reaction is set unstripped gas and reducing gas flow separately, so, even being formed on the internal diameter and the width of the recess on handled object surface diminishes, perhaps recess is vertical wide than becoming big, and the ladder in the time of also can improving forming thin film covers.
Description of drawings
Fig. 1 is the summary pie graph of an example of the expression plasma film forming apparatus of implementing the inventive method.
Fig. 2 is the figure of an example that is illustrated on the semiconductor wafer upper supernatant phase of the handled object when implementing film forming and handling.
Fig. 3 is the graphic representation of optimum range that is used for illustrating each flow of the unstripped gas of the inventive method and reducing gas.
Fig. 4 is expression H 2H in much films more in the past of flow 2The graphic representation of the relation of flow and rate of film build.
Fig. 5 is that expression is with H 2H when flow becomes considerably less 2The graphic representation of the relation of flow and rate of film build.
Fig. 6 amplifies the graphic representation that shows with the part among Fig. 5.
Fig. 7 is that expression is with H 2TiCl when flow has carried out various the change 4The graphic representation of the relation of flow and rate of film build.
Fig. 8 is that expression is to H 2Chlorine when flow has carried out various change the and the atomicity of hydrogen are than the graphic representation of the relation of (Cl/H ratio) and rate of film build.
Fig. 9 is the graphic representation of measured value of the thickness of each position of expression in the recess.
Figure 10 is the figure that schematically represents the mensuration position of the thickness in the recess.
Figure 11 is a replacement accompanying drawing photo of having taken the one-tenth membrane stage in the recess with SEM (electron microscope).
Figure 12 is an enlarged photograph of schematically representing the specific part among Figure 11.
The process picture sheet of the film when Figure 13 is the imbedding of recess of expression semiconductor wafer surface.
Description of reference numerals
2 conductive layers; 4 insulation layers; 6 recesses; The 8Ti film; The 10TiN film; 12 blocking layers; 20 plasma film forming apparatus; 22 processing vessels; 28 vacuum evacuating systems; 32 vacuum pumps; 36 mounting tables; 38 heating arrangements; 40 shower nozzles (gas introducing mechanism); 56TiCl 4Source of the gas; 58H 2Source of the gas; 70 high frequency electric sources; 74 plasma bodys form mechanism; 82 control parts; 84 storage medias; W semiconductor wafer (handled object).
Embodiment
Below, the preferred embodiment to film of the present invention and plasma film forming apparatus describes in detail based on accompanying drawing.Fig. 1 is the summary pie graph of an example of the expression plasma film forming apparatus of implementing the inventive method.As shown in the figure, plasma film forming apparatus 20 of the present invention has the processing vessel 22 that for example is configured as the cylinder shape by aluminium, aluminium alloy, stainless steel etc., these processing vessel 22 ground connection.
Be provided with the venting port 26 that is used for the ambient air in the amount discharge container in the bottom 24 of this processing vessel 22, this venting port 26 is connecting vacuum evacuating system 28.This vacuum evacuating system 28 has the exhaust channel 29 that is connected with above-mentioned venting port 26, in this exhaust channel 29 in order to swim from it that the pressure adjustment is carried out in the side direction downstream side and the pressure-regulating valve 30 and the vacuum pump 32 that are provided with the adjustable valve aperture successively.Thus, can be to vacuumizing equably from bottom periphery portion in the processing vessel 22.
In this processing vessel 22, the pillar 34 that constitutes via electro-conductive material is provided with discoideus mounting table 36, can mounting on it as the semiconductor wafer W such as for example silicon substrate of handled object.Specifically, this mounting table 36 is made of potteries such as AlN, and its surface is cladded by electro-conductive material, and to be also used as plasma body be lower electrode with of electrode, and this lower electrode ground connection.Upload in this mounting table 36 and for example to be equipped with that diameter is the semiconductor wafer W of 300mm.In addition, also there is the situation of in mounting table 36, imbedding netted conductive component as above-mentioned lower electrode.
For example in this mounting table 36, imbed the heating arrangements 38 that constitutes by resistance heater etc., the heating semiconductor wafer W, and it can be maintained temperature desired.In addition, this mounting table 36 is provided with the periphery of pushing semiconductor wafer W and is fixed in the not shown gripping ring on the mounting table 36 and withstands the not shown lifter pin that semiconductor wafer W makes it lifting when taking out of semiconductor wafer W moving into.
It is the shower nozzle 40 as the gas introducing mechanism of upper electrode with another of electrode that the top of above-mentioned processing vessel 22 is provided with the double as plasma body, and this shower nozzle 40 becomes one with top board 42.In addition, the periphery of this top board 42 with respect to the upper end of container side wall, is mounted airtightly through insulation material 44.This shower nozzle 40 forms by electro-conductive materials such as for example aluminum or aluminum alloy.
This shower nozzle 40 is provided with opposed to each other with roughly whole mode and the mounting table 36 that covering forms the upper surface of circular above-mentioned mounting table 36, and forms the processing space S between shower nozzle 40 and mounting table 36.This shower nozzle 40 with all gases shower shape import to the processing space S, be formed for a plurality of jet holes 46 of jet flow stream at the jet face of the lower surface of shower nozzle 40.
In addition, be provided with the gas introduction port 48 that in head, imports gas on the top of this shower nozzle 40, and gas supply mechanism 50 from all gases to this gas introduction port 48 that supply with is installed.This gas supply mechanism 50 has the supply passageway 52 that is connected with above-mentioned gas introducing port 48.
Be connected with a plurality of take-off pipes 54 on this supply passageway 52, each take-off pipe 54 is connected with for example TiCl that stores as the unstripped gas that comprises the titanium that film forming uses respectively 4The TiCl of gas 4Source of the gas 56, store for example H as reducing gas 2The H of gas 2Source of the gas 58, store Ar source of the gas 60, store NH as for example ammonia of nitriding gas as Ar gas plasma gas or diluent gas 3Source of the gas 62 and store for example N as Purge gas etc. 2The N of gas 2Source of the gas 64.In addition, also exist N 2Gas is as the situation of nitriding gas.In addition, the flow of each gas is by such flow director 66 controls of for example mass flow controller on the take-off pipe 54 that is arranged at separately (mass flowcontroller).In addition, be provided with the open and close valve 68 that the supply of carrying out above-mentioned each gas and supply stop as required in the upstream side of the flow director 66 of each take-off pipe 54 and downstream side.
In addition,, the situation that all gases is supplied with admixture in a supply passageway 52 is shown, but is not limited to this, also a part of gas or all gas can be supplied in the different respectively supply passageways, in shower nozzle 40, make it to mix at this.In addition, according to institute's gas supplied kind, also can utilize not in supply passageway 52 or mixing in the shower nozzle 40, and in handling space S, mix each gas gas delivery mode of ((Post-Mix) mixed in so-called back).
In addition, between the periphery of the above-mentioned shower nozzle 40 in processing vessel 22 and the inwall of processing vessel 22, be provided with the cyclic insulating element 69 that for example is made of quartz etc., and its lower surface is configured to and the same horizontal rank of the jet face of shower nozzle 40, plasma body can be even.In addition, be provided with a well heater 72, shower nozzle 40 can be adjusted to temperature desired in the upper surface side of above-mentioned shower nozzle 40.
In addition, in this processing vessel 22, have the plasma body that forms plasma body in the processing space S between above-mentioned mounting table 36 and shower nozzle 40 and form mechanism 74.Specifically, this plasma body forms mechanism 74 and has the lead 76 that is connected with the top of above-mentioned shower nozzle 40, is connected with on this lead 76 via matching circuit 78 connecting the high frequency electric source 70 that power supply is used in for example generation as plasma body of 450kHz midway.
At this, utilize high frequency electric source 70, can change output power so that can export the electric power of any size.In addition,, form the opening 79 that wafer W is passed through, be provided with the gate valve 80 that can open and close airtightly when taking out of semiconductor wafer W at this opening 79 moving at the sidewall of processing vessel 22.
In addition, action for the integral body of controlling this plasma body film deposition system 20, have the control part 82 that constitutes by for example computer etc., for example be used for the control of operation pressure, technological temperature, each gas delivery volume indication, comprise the indication etc. of supply capability of the break-make of High frequency power.In addition, above-mentioned control part 82 has the storage media 84 of the required computer program of the above-mentioned control of storage.This storage media 84 is for example by formations such as floppy disk, CD (Compact Disc), hard disk, flash memory or DVD.
[explanation of film]
Then, also the film of the present invention that utilizes the above plasma film forming apparatus that constitutes like this to carry out is described referring to figs. 1 through Fig. 3.Fig. 2 is the figure of an example of state that is illustrated on the semiconductor wafer upper surface of the handled object when implementing film forming and handling, and Fig. 3 is the graphic representation that is used for illustrating the optimum range of the unstripped gas of the inventive method and reducing gas flow separately.At this, to make the situation that the titaniferous film of bag that forms with method of plasma processing forms Ti (titanium) film is that example describes, but in the processing condition of this explanation as described later, be applicable to similarly roughly that also the TiN film (titanium nitride film) to forming with method of plasma processing carries out film forming situation.
At first, on the mounting table 36 of processing vessel 22 for example the mounting diameter be the semiconductor wafer W of 300mm.The film forming situation of the upper surface of this semiconductor wafer W for example shown in Fig. 2 (A), is formed with recess 6 on the surface of wafer W.The structure of this semiconductor wafer W is identical with the structure that illustrates with Figure 13 (A).
That is, for example be formed with the conductive layer 2 that becomes wiring layer etc. on the surface of semiconductor wafer W, form for example by SiO with specific thickness on the whole surface of semiconductor wafer W in the mode that covers this conductive layer 2 2The insulation layer 4 that film etc. constitute.Above-mentioned conductive layer 2 for example is made of the silicon layer of the impurity that mixed, and specifically, the corresponding situations such as electrode of existence and transistor, electrical condenser etc. also are being to be formed by NiSi (nisiloy) etc. under at the situation of transistorized contact especially.
Then, on above-mentioned insulation layer 4, be formed with the recess that is used for the contact 6 that is used for realizing the open-work that electrically contacts or through hole etc. at above-mentioned conductive layer 2.The internal diameter of this recess 6 (recess 6 for groove time be width) is for example for below the 60nm, and this is vertical wide to be about 10～20 than (ratio in concave depth and aperture).In addition, also there is the situation that forms elongated groove (groove) as above-mentioned recess 6.It in the bottom of this recess 6 state that expose on the surface of above-mentioned conductive layer 2.In addition, the whole surface of bottom surface in having comprised this recess 6 and lateral semiconductor wafer W, be that the surface of insulation layer 4 and conductive layer 2 forms and to have the blocking layer of function as mentioned above.
At first, making the titaniferous unstripped gas of bag from gas supply mechanism 50 is TiCl 4The H of gas and reducing gas 2Gas, plasma body flow to shower nozzle 40 as the gas introducing mechanism with the flow of regulation respectively with the Ar gas of gas (diluent gas), and these all gases are imported in the processing vessel 22 from shower nozzle 40, and the vacuum pump 32 by vacuum evacuating system 28 will vacuumize in the processing vessel 22, and maintains the pressure of regulation.
Meanwhile, utilize plasma body to form the high frequency electric source 70 of mechanism 74,, between shower nozzle 40 and mounting table 36, apply high-frequency electric field to drop into electric power as lower electrode to the high frequency that applies 450kHz as the shower nozzle 40 of upper electrode.Thus, Ar gas is made TiCl by plasma bodyization 4Gas and H 2Gas reacts, and utilizes plasma CVD method to carry out film forming to the Ti film 8 as film on the surface of semiconductor wafer W shown in Fig. 2 (B).
The temperature of semiconductor wafer W utilizes the heating arrangements 38 that is made of resistance heater of imbedding mounting table 36 to heat the temperature that is maintained to regulation.Thus, the upper surface of semiconductor wafer W not only, Ti film 8 also can be piled up in bottom surface in recess 6 and side.At this moment, in the methods of the invention, the determine mode of response behaviour of speed is set above-mentioned raw materials gas and reducing gas flow separately so that the reaction during film forming is the reaction of unstripped gas.
Thus, not only at the upper surface of semiconductor wafer W, Ti film 8 also can be piled up in bottom surface in recess 6 and side.That is, as described later when in the past film, supply with and TiCl as unstripped gas 4The flow of gas for example 12sccm compares how a lot of flows are H for the reducing gas of 4000sccm for example 2Gas carries out film forming with the certainly fast response behaviour of supply that becomes unstripped gas and handles.There is the Cl atomicity of the deterioration that causes membrane property residual in the film that the reason of supplying with reducing gas like this, in a large number is to worry to pile up.
Like this, when the response behaviour of the speed of determining by the supply of unstripped gas is carried out the film forming processing, if TiCl 4Gas arrives the then direct and a large amount of H that exist of upper surface of wafer W 2Gas reaction is in the easy build-up film of the upper surface side of wafer W, at the upper surface TiCl of wafer W 4Gas can be consumed and make TiCl 4Gas is difficult to invade in the recess.Its result can think to be difficult to build-up film on bottom surface in recess and the sidewall that ladder covers and descends.
To this, as the present invention, compare the H that significantly reduces as reducing gas with film in the past 2The flow of gas and carry out film forming and handle by the determine response behaviour of speed of the reaction of unstripped gas has as mentioned above been eliminated thus because of H 2The only upper surface portion TiCl of wafer W so the existence of gas tails off 4Gas is with regard to depleted phenomenon, its result, TiCl 4Gas invades the inside in the recess 6 easily.Its result, also build-up film fully on bottom surface in recess 6 and the sidewall can make ladder cover and improve.
At the processing condition of the flow of unstripped gas and reducing gas, be TiCl at the expression transverse axis as shown in Figure 3 in the inventive method 4The flow of gas and the longitudinal axis are H 2In the graphic representation of the relation of the flow of gas, be the zone shown in the oblique line below the straight line L1.In addition, straight line L1 is some A1 in the interface chart 3 and the straight line of putting A2 as described later, and establishing coordinate is (TiCl 4Gas flow sccm, H 2Gas flow sccm) time, A1 is (12,50), and A2 is (20,100).The zone of this straight line L1 below is the determine zone of response behaviour of speed of the reaction that becomes unstripped gas as described later.The preferred TiCl that is supplied with 4Gas and H 2The atomicity ratio of the Cl atomicity of gas and H atomicity is that Cl/H is the straight line L3 area surrounded of " 0.5 " than the straight line L2 and the Cl/H ratio that are " 1.5 ", and more preferably Cl/H is the straight line L5 area surrounded of " 0.7 " than straight line L4 and Cl/H ratio for " 1.3 ".For this point aftermentioned.
In addition, technological temperature and operation pressure, all roughly the same with film in the past, for example in 400～700 ℃ scope, operation pressure is for example in the scope of 133～1333Pa for technological temperature.
[reaching the explanation of process of the best ratio of processing condition]
Then, the process to the scope of the best of obtaining the such processing condition of the graphic representation that reaches shown in Figure 3 describes.Fig. 4 is expression H 2Flow is the H of many films in the past very 2The graphic representation of the relation of flow and rate of film build, Fig. 5 are the H of expression when flow become considerably less 2The graphic representation of the relation of flow and rate of film build, Fig. 6 are the graphic representations that the part among Fig. 5 is amplified expression, are to amplify to show that rate of film build is near the graphic representation of peak value.Fig. 7 is that expression is to H 2TiCl when flow has carried out various the change 4The graphic representation of the relation of flow and rate of film build, Fig. 8 are that expression is to H 2Chlorine when flow has carried out various change the and the atomicity of hydrogen are than the graphic representation of the relation of (Cl/H ratio) and rate of film build.For the film forming processing of the Ti film of explanation after this, the plasma film forming apparatus that utilizes Fig. 1 to illustrate.
At first, checking H when use film in the past carries out film forming to the Ti film at first 2The relation of flow and rate of film build.For the processing condition of this moment, intention makes the reduction of the Cl concentration in the film in the existing film, with respect to TiCl 4The flow of gas is supplied with H in a large number 2The flow of gas, TiCl here 4Gas is 12sccm, this is made H 2The flow of gas is in the range of 500～4000sccm.In addition, will be 1600sccm with the flow set of the Ar gas of gas as plasma body.
And operation pressure be set at 667Pa, technological temperature be set at 550 ℃, High frequency power be set at 800W (watt), film formation time is 30sec in addition.In this mensuration of thickness is not the bottom surface of measuring in the recess of wafer W, but measures the thickness of the film of the upper surface that is stacked into wafer.In the rate of film build of representing in afterwards the graphic representation of this point too.
As shown in Figure 4, can think rate of film build and H 2The increase of flow is roughly linearity increase pro rata.Like this and TiCl 4The flow of gas is compared and is significantly being supplied with H 2Under the condition of gas, the film formation reaction of Ti film is TiCl 4Therefore certainly speed reaction of the supply of gas causes film formation reaction, so TiCl near the upper surface of wafer 4Gas can be consumed.Thus, invade TiCl in the recess such as hole 4It is considerably less that gas becomes, its result, and the bottom surface, the Ti film on the sidewall that are stacked in the recess become extremely thin with respect to the thickness of wafer surface, and ladder covers and worsens.
Therefore, compare with film in the past, research is with H 2Rate of film build in the zone that gas flow becomes considerably less.At this, technological temperature, operation pressure, film formation time, High frequency power are distinguished identical with situation shown in Figure 4.Make TiCl in addition 4The flow of gas is two kinds of 12sccm and 20sccm, makes H 2Gas flow changes in the scope of 30～500sccm (Ar=2000sccm).The result of this moment illustrates at Fig. 5 and Fig. 6.As Fig. 5 and shown in Figure 6,, can confirm at H for rate of film build 2The few flow region of gas flow, for example produce peak value in the flow region about 50～100sccm.This peak value is at TiCl 4Flow is H during for 12sccm 2Some A1 when flow is 50sccm, TiCl 4Flow is H during for 20sccm 2Some A2 when flow is 100sccm.
That is, can think from H 2When the state that flow is few was increased to peak, rate of film build was along with H 2The increase of flow sharply increases, and surpasses after the peak, even H 2Flow increase rate of film build also is roughly certain or becomes the tendency that little by little reduces.This reason is because be the H of boundary on the peak right side with the peak in Fig. 5 and Fig. 6 2The zone that flow is many is TiCl 4The supply of gas is the conversion zone of speed certainly.H in the peak left side 2Flow is TiCl in the few zone 4The reaction of gas is the zone of speed certainly.Some A1 in this Fig. 6 is corresponding with the some A1 among Fig. 3, and the some A2 among Fig. 6 is corresponding with the some A2 among Fig. 3.
Then, about rate of film build, to TiCl 4The dependency of gas flow is studied.At this to H 2H when gas flow carries out various change 2Gas flow and TiCl 4The relation of gas flow and rate of film build is studied.For processing condition, technological temperature, operation pressure, film formation time, the High frequency power situation with shown in Figure 4 respectively are identical.In addition, establish H 2Gas flow is 30sccm, 40sccm, 50sccm (Ar under any circumstance is 2000sccm) and as four kinds of the 4000sccm (Ar=1600sccm) of the standard of previous methods, makes TiCl 4Gas flow changes in the scope of 4～20sccm.The result of this moment is shown in Fig. 7 and Fig. 8.Fig. 8 is for result shown in Figure 7, with TiCl 4And H 2Each gas flow in atomicity be transverse axis than (Cl/H than), the figure that rewriting forms.This for example " Cl/H than=1 " be meant if be scaled TiCl 4And H 2Throughput ratio, then be " TiCl 4Flow/H 2The relation of flow=1/2 ".
As Fig. 7 and shown in Figure 8, the " standard (H of expression film in the past 2: 4000sccm) under " the situation, along with increasing TiCl 4The flow of gas, rate of film build only increase point-blank.This is owing to be in TiCl on the whole zone of above-mentioned gas feed rate 4The supply of gas is the response behaviour of speed certainly.
With respect to this, at H 2Gas flow is that rate of film build is along with TiCl under the situation of 30～50sccm 4The flow of gas increases and increases gradually, when gas flow is about 12～20sccm the time, becomes peak value and reduces gradually then.In addition, at H 2Gas flow is under the situation of 40sccm and 50sccm, though not expression in graphic representation can be thought and H 2The trend of the graphic representation when gas flow is 30sccm similarly rate of film build descends after having passed through peak value.At this moment, under situation shown in Figure 7, peak depends on H 2Gas flow and direction (TiCl to the left and right bit by bit 4The direction of the traffic of gas) moves, but as shown in Figure 8, be in the graphic representation of Cl/H ratio with the transverse axis, not only H 2Gas flow, Cl/H be than being peak value for the position of " 1 " roughly, thus along with its before right-hand zone and then minimizing gradually.
TiCl when this " Cl " expression film forming 4Contained whole Cl atomicities in the gas flow, the H during " H " expression film forming 2Contained whole H atomicities in the gas flow.In addition, Cl/H is TiCl than=1 as mentioned above 4And H 2Throughput ratio " TiCl 4Flow/H 2Flow "=" 1/2 ".
Like this, in Fig. 7, be only at H 2The situation that gas flow is few is (under 30～50sccm), with respect to TiCl 4Flow produces the result of the peak value of rate of film build, at H in the past 2Near upper wafer surface, can consume TiCl in the gas flow film how 4Gas causes invading the interior TiCl of recess such as contact hole 4The amount of gas reduces.On the contrary, even H 2The few situation of gas flow is at TiCl 4The zone that gas flow is few, though near upper wafer surface TiCl 4Gas equally also can be consumed, but near the zone rate of film build has peak value does not exhaust TiCl near the upper surface of wafer W 4Gas and can have remaining TiCl 4Gas, therefore, this remaining TiCl 4Gas invades and produces film forming in the recess, can expect the improvement that ladder covers.
In addition, in the plasma body when film forming because of TiCl 4The Cl atom of gas (unstripped gas) and because of H 2The H atom of gas becomes HCl (gas) and is discharged from, but in Fig. 8, ratio=roughly 1 part is a peak value to rate of film build with Cl/H, expression must have a H atom in order to reduce a Cl atom, the Cl atom that produces when having film forming does not have superfluous not enough and can make under the situation of amount of the H atom that the Cl atom removes film formation reaction become the reaction speed zone of determining just, we can say that ladder covers to improve yet.
Therefore, as mentioned above as can be known, also can be with TiCl 4The determine mode of response behaviour of speed of the reaction of gas (unstripped gas) is set unstripped gas and the various flow of reducing gas, especially neighbouringly improves that ladder covers and preferred for what become " Cl/H is than=1 ".At this moment, the Cl/H in the environmental gas in the processing vessel is than preferably in 0.5～1.5 scope, more preferably in 0.7～1.3 scope, if break away from above-mentioned scope, so then the rate of film build reduction is not preferred as can be seen from Figure 8.
Therefore, at first describe with reference to Fig. 3, the processing condition of unstripped gas and reducing gas be below Fig. 3 cathetus L1 the zone, be the determine zone of response behaviour of speed of the reaction of unstripped gas, preferably by the TiCl that is supplied with 4Gas and H 2The atomicity ratio of the Cl atomicity of gas and H atomicity is that Cl/H is the straight line L3 area surrounded of " 0.5 " than the straight line L2 and the Cl/H ratio that are " 1.5 ", is the straight line L5 area surrounded of " 0.7 " by Cl/H than straight line L4 and Cl/H ratio for " 1.3 " more preferably.At this, the some P1 among Fig. 7 and Fig. 8 is corresponding with the some P1 among Fig. 3, and the some P2 among Fig. 7 and Fig. 8 is corresponding with the some P2 among Fig. 3.
Like this, as the present invention, compare the H that significantly reduces as reducing gas with film in the past 2The flow of gas carries out film forming with the certainly fast response behaviour of the reaction of unstripped gas as mentioned above and handles, and does not have because of H thus 2The upper surface portion of the wafer W most TiCl that just disappears so the existence of gas only tails off 4The phenomenon of gas, its result, TiCl 4Gas invades the inside in the recess 6 easily.Its result, also build-up film fully on bottom surface in recess 6 and the sidewall can make ladder cover and improve.
[evaluation that actual film forming is handled]
Then, because the semiconductor wafer W utilization that is made of silicon substrate film and the film of the present invention film forming of having carried out the Ti film practically in the past handled, so its evaluation result is described.
Processing condition during film forming, when film in the past, technological temperature is that 550 ℃, operation pressure are 667Pa, are TiCl for each gas flow 4/ Ar/H 2=12/1600/4000sccm.Anastomosing High frequency power is 800W, and film formation time is 30sec.
In addition, under the situation of the inventive method, carry out at the some P2 among Fig. 3, Fig. 7 and Fig. 8 as representative.That is, technological temperature is that 550 ℃, operation pressure are 667Pa, are TiCl for each gas flow 4/ Ar/H 2=20/2000/40sccm.Anastomosing High frequency power is 800W, and film formation time is 30sec.That is, with respect to film in the past, only TiCl 4Gas and H 2The flow difference of gas.In addition, the diameter that is formed on the poroid recess on the silicon substrate is that 60nm, vertical wide ratio are 10.
Fig. 9 is the graphic representation of measured value of the thickness of each position of expression in the recess, Figure 10 is the figure that schematically represents the mensuration position of the thickness in the recess, Figure 11 is a replacement accompanying drawing photo of taking the film forming state in the recess with SEM (electron microscope), and Figure 12 is the enlarged photograph of the specific part among expression Figure 11.As Fig. 9 and shown in Figure 10, the thickness on the upper surface of " top " expression wafer W among Fig. 9, the thickness on the bottom surface in the so-called bottom expression recess 6.In addition, side (top), side (centre) and side (bottom) are represented the thickness of epimere, stage casing and the hypomere of the sidewall in the recess respectively.
As shown in Figure 9, by the order of top, bottom, side (top board), side (centre), side (bottom), be respectively 12.4nm, 8.5nm, 3.9nm, 1.8nm, 0.8nm in the film in the past.With respect to this, be respectively 10.1nm, 11.7nm, 3.9nm, 4.0nm, 3.7nm by said sequence in the inventive method.
Therefore, ladder covers [(thickness at the thickness/top of each position) * 100] in film in the past, and the order by bottom, side (top), side (centre), side (bottom) is respectively 68.7%, 31.8%, 14.4%, 6.6%.
With respect to this, in the inventive method, be respectively 116.1%, 39.2%, 39.6%, 36.9% by said sequence.According to its result, to cover in the past the film be 68.7% to the ladder in the bottom surface in the recess as can be known, but be 116.1% in the methods of the invention, can significantly improve as can be known.
In addition, about the sidewall in the recess, under the situation of in the past film, between side (top) and side (bottom), have 25.2nm (=31.8-6.6) thickness poor, but under the situation of the inventive method, (=39.2-36.9) thickness poor compared with film in the past and not only can make uniform film thickness ground film forming on sidewall for 2.3nm, can also make the enough heavy back film forming of thickness, improve the ladder covering as can be known from this point.
In addition, in the above-described embodiment, utilize Ar gas as plasma body with gas, but be not limited thereto, also can utilize other rare gas such as He, Ne.In addition, utilize TiCl at this as unstripped gas 4Gas, but be not limited thereto, also can use TDMAT (Ti[N (CH 3) 2] 4: four (dimethylamino) titanium) gas or TDEAT (Ti[N (C 2H 5) 2] 4: gas etc. four (diethylin) titanium).
In addition, be that example describes with the situation that forms the Ti film as the film that utilizes the film forming Ti of comprising of plasma CVD method in the above-described embodiments, but be not limited thereto, can also apply the present invention to the film forming situation of TiN film.Append for example nitrogen (N as nitriding gas during at this moment, with the film forming of the Ti film of the inventive method explanation 2) making it to flow to form above-mentioned Ti film thus.Be not limited to N as this nitriding gas in addition 2Gas also can utilize NH 3Gas, hydrazine (H 2N-NH 2) gas, methyl hydrazine (CH 3-NH-NH 2) gas etc.
In addition, is that example is illustrated at this with the semiconductor wafer as handled object, but this semiconductor wafer also comprises silicon substrate and compound semiconductor substrates such as GaAs, SiC, GaN, and be not limited to these substrates, can also apply the present invention to employed glass substrate of liquid crystal indicator or ceramic substrate etc.

Claims (10)

1. film, in the processing vessel that can be evacuated, accommodate insulation layer and be formed on surperficial handled object with recess, and in above-mentioned processing vessel, supply with titaniferous unstripped gas of bag and reducing gas, utilize plasma CVD method to make the above-mentioned gas reaction and on above-mentioned handled object, form and wrap titaniferous film, it is characterized in that
With above-mentioned being reacted into is that the determine mode of response behaviour of speed of the reaction of above-mentioned raw materials gas is set above-mentioned raw materials gas and above-mentioned reducing gas flow separately.
2. film according to claim 1 is characterized in that, above-mentioned raw materials gas is the gas that comprises chlorine, and above-mentioned reducing gas is the hydrogenous gas of bag.
3. film according to claim 2, it is characterized in that, set above-mentioned raw materials gas and above-mentioned reducing gas flow separately than the mode in 0.5～1.5 scope so that the ratio of the amount of chlorine atom of the environmental gas in the above-mentioned processing vessel and number of hydrogen atoms is Cl/H.
4. film according to claim 2, it is characterized in that, set above-mentioned raw materials gas and above-mentioned reducing gas flow separately than the mode in 0.7～1.3 scope so that the ratio of the amount of chlorine atom of the environmental gas in the above-mentioned processing vessel and number of hydrogen atoms is Cl/H.
5. according to each described film in the claim 1～4, it is characterized in that supplying with has nitriding gas in above-mentioned processing vessel.
6. film according to claim 5 is characterized in that, above-mentioned nitriding gas is a nitrogen.
7. according to each described film in the claim 1～6, it is characterized in that the internal diameter of above-mentioned recess or width are below 60nm.
8. according to each described film in the claim 1～7, it is characterized in that above-mentioned raw materials gas is TiCl 4Gas, above-mentioned reducing gas are H 2Gas.
9. a plasma film forming apparatus is formed on the titaniferous film of formation bag on the surperficial handled object at the insulation layer with recess, it is characterized in that, comprising:
Processing vessel, it can be evacuated;
Mounting table, its above-mentioned handled object of mounting and play a role in above-mentioned processing vessel as lower electrode;
Heating arrangements, it heats above-mentioned handled object;
The gas introducing mechanism, it imports the necessary all gases that comprises unstripped gas and plays a role as upper electrode in above-mentioned processing vessel;
Gas supply mechanism, it supplies with above-mentioned all gases to the above-mentioned gas introducing mechanism;
Plasma body forms mechanism, and it forms plasma body between above-mentioned mounting table and above-mentioned gas introducing mechanism;
Control part, it is controlled and implements each described film in the claim 1～8.
10. storage media, it is characterized in that, when the program of storage embodied on computer readable, this program form the titaniferous film of bag on the surface that utilizes plasma film forming apparatus at handled object, control above-mentioned plasma film forming apparatus and implement each described film in the claim 1～8
Above-mentioned plasma film forming apparatus comprises:
Processing vessel, it can be evacuated;
Mounting table, the insulation layer that its mounting in above-mentioned processing vessel has recess are formed on the handled object on surface and play a role as lower electrode;
Heating arrangements, it heats above-mentioned handled object;
The gas introducing mechanism, it imports the necessary all gases that comprises unstripped gas and plays a role as upper electrode in above-mentioned processing vessel;
Gas supply mechanism, it supplies with above-mentioned all gases to the above-mentioned gas introducing mechanism;
Plasma body forms mechanism, and it forms plasma body between above-mentioned mounting table and above-mentioned gas introducing mechanism;
Control part is controlled whole device.
CN2010101745210A 2009-05-08 2010-05-10 Film forming method and plasma film forming apparatus Pending CN101880869A (en)

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JPH06140348A (en) * 1992-09-14 1994-05-20 Sumitomo Metal Ind Ltd Method for forming thin film
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