CN101867153A - Ring-cavity photonic crystal vertical-cavity surface-emitting laser - Google Patents
Ring-cavity photonic crystal vertical-cavity surface-emitting laser Download PDFInfo
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- CN101867153A CN101867153A CN200910081989A CN200910081989A CN101867153A CN 101867153 A CN101867153 A CN 101867153A CN 200910081989 A CN200910081989 A CN 200910081989A CN 200910081989 A CN200910081989 A CN 200910081989A CN 101867153 A CN101867153 A CN 101867153A
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Abstract
The invention discloses a ring-cavity photonic crystal vertical-cavity surface-emitting laser (PC-VCSEL), which is characterized by comprising a lower electrode (1), an n-type substrate (2), lower DBR (3), an active area (4), an oxide layer (5), upper DBR (6) on which air holes are carved, a p-type cover layer (7), an upper ring electrode (8), an air hole area (9) and a ring light-exiting hole area (10) in sequence from bottom to top, wherein the air hole area on the surface of the upper DBR of the laser is a high loss area; the ring area enclosed by the air holes is a light output area; and the electrodes of the laser are evaporated on the surface of the p-type cover layer of the upper DBR and the lower surface of the n-type substrate. The laser can realize coherent coupling output and the output power and the beam quality of the laser are improved.
Description
Technical field
The present invention relates to the semiconductor photoelectronic device technical field, relate in particular to a kind of ring-cavity photonic crystal vertical-cavity surface-emitting laser.
Background technology
Vertical cavity surface emitting laser (VCSEL) with its light beam vertical substrates outgoing, light beam to weighing up, low-power consumption, being easy to realize advantage such as single mode operation and two-dimensional array be integrated, be subjected to extensive use in fields such as optical communication, optical storage, optical interconnection, solid-state illumination, laser printing and bio-sensings, caused people's great interest and close attention.All require VCSEL single mode high power work in numerous application scenarios, when oxide-aperture is very little, realize single transverse mode work easily, but limited power output.Experimental result shows that when oxide-aperture is reduced to 3 μ m wavelength is that the VCSEL of 850nm can realize single mode output, but its peak power output is less than 3mW.In order to improve power output, need to increase the oxide-aperture size, but thermal effect and spatial hole burning phenomenon will cause the generation of high-rder mode, make the mis-behave of device.
In order to realize single mode high-power V CSEL, selection loss mechanism based on pattern, just like document 1: the surface etch structure of " H.Martinsson; J.A.Vuku ˇ si ' c; K.J.Ebeling; et al.; IEEE PHOTONICSTECHNOLOGY LETTERS; 1999 (11): 1536 " report, document 2: " Delai Zhou, Luke J.Mawst, IEEE JOURNAL OF QUANTUM ELECTRONICS, 2002 (38): 1599 " Bao Dao anti-waveguiding structure and document 3: " Akio Furukawa, Satoshi Sasaki, Mitsunari Hoshi, Atsushi Matsuzono, et al., Appl.Phys.Lett.2004 (85): 5161 " the triangle cavernous structure of report.These three kinds of structures have all realized high-power sharp the penetrating of single mode, but need accurately control, complex manufacturing technology.
And photonic crystal provides an excellent platform for the performance of improving opto-electronic device, and photonic crystal vertical-cavity surface-emitting laser is exactly a successful model.In photonic crystal vertical-cavity surface-emitting laser (PC-VCSEL), oxide-aperture is bigger than bright dipping aperture, so oxide-aperture only limits electric current, light field is limited by the photonic crystal airport.We know that in vertical cavity surface emitting laser, power output is proportional to active region area, and therefore in photonic crystal vertical-cavity surface-emitting laser, the size of defect cavity has determined power output.Because the power output of single defect cavity is limited all the time, and the bright dipping aperture can cause the generation of high-rder mode when changing 7 hole defect chambeies into, so document 4: " James J.Raftery; Jr.; Ann C.Lehman; Aaron J.Danner; et al.; Appl.Phys.Lett.2006 (89): 081119 " reported the photonic crystal vertical-cavity surface-emitting laser of having made 2 * 1 and 2 * 2 arrays by the size of fine setting coupled zone airport, and having obtained the PC-VCSEL that relevant coupling is exported, its far-field distribution has a main lobe at initial point.But, no matter be the two-chamber coupling or the PC-VCSEL of four chambeies coupling, because the area of its active area is limited, its power output still is restricted.
Summary of the invention
(1) technical problem that will solve
In view of this, main purpose of the present invention is to provide a kind of ring-cavity photonic crystal vertical-cavity surface-emitting laser, overcoming the not high bottleneck of single defective photonic crystal vertical-cavity surface-emitting laser single mode power output, and realize the purpose of the low angle of divergence output of light beam based on relevant coupling.
(2) technical scheme
For achieving the above object, the invention provides a kind of ring-cavity photonic crystal vertical-cavity surface-emitting laser, this vertical cavity surface emitting laser is made of bottom electrode 1, n type substrate 2, following DBR3, active area 4, oxide layer 5, the last DBR6 that is carved with airport, p type cap rock 7 and last annular electrode 8, air porose area 9 and annular bright dipping porose area 10 from the bottom to top successively.
In the such scheme, the airport in the described air porose area 9 is the photonic crystal airport that triangular crystal lattice is arranged, or the photonic crystal airport of tetragonal lattice arrangement.
In the such scheme, described triangular crystal lattice is arranged the photonic crystal airport of photonic crystal airport or tetragonal lattice arrangement, and its cellular is circular air pass, oval air pass or square air pass.
In the such scheme, described annular bright dipping porose area 10 is by the airport area surrounded.
In the such scheme, described air porose area 9 is high loss zones.
In the such scheme, the designed oxide-aperture of this vertical cavity surface emitting laser is bigger than the external diameter of annular light hole.
In the such scheme, the etching depth of airport is 40%～80% of a last DBR3 thickness in the described air porose area 9.
In the such scheme, described annular electrode 8 evaporations of going up are on the surface of p type cap rock 7, and described bottom electrode 1 evaporation is at the lower surface of n type substrate 2.
In the such scheme, the described material of going up annular electrode 8 employings is the TiAu alloy, and the material that bottom electrode 1 adopts is the AuGeNiAu alloy.
In the such scheme, the described reflectivity of DBR3 down is higher than the reflectivity of the described DBR6 of going up.
In the such scheme, the operation wavelength of this vertical cavity surface emitting laser covers deep ultraviolet to far infrared band.
(3) beneficial effect
From technique scheme as can be seen, the present invention has following beneficial effect:
1, this ring-cavity photonic crystal vertical-cavity surface-emitting laser provided by the invention has increased the area of active area, has improved power output, is expected to realize the power output of 10mW magnitude.
2, this ring-cavity photonic crystal vertical-cavity surface-emitting laser provided by the invention can be reduced to one 2 * 1 vertical cavity surface emitting laser arrays, can realize relevant coupling output, the low angle of divergence light beam of output when improving power output.
3, this ring-cavity photonic crystal vertical-cavity surface-emitting laser provided by the invention because its oxide-aperture is very big, had both reduced differential resistance, had improved efficient, had prolonged the life-span and the reliability of device again.
Description of drawings
Fig. 1 is the structural representation of this ring-cavity photonic crystal vertical-cavity surface-emitting laser provided by the invention.The z coordinate direction is represented the device vertical direction among the figure; X, y coordinate direction are represented the device horizontal direction;
Fig. 2 is carved with the surface topography schematic top plan view of the ring-cavity photonic crystal surface-emitting laser of the circular airport that triangular crystal lattice arranges for the last DBR of this ring-cavity photonic crystal vertical-cavity surface-emitting laser provided by the invention, and its center airport also can be transferred greatly or be turned down;
Fig. 3 is carved with the surface topography schematic top plan view of the ring-cavity photonic crystal surface-emitting laser of the circular airport that tetragonal lattice arranges for the last DBR of this ring-cavity photonic crystal vertical-cavity surface-emitting laser provided by the invention, and its center airport also can be transferred greatly or be turned down;
The scanning electron microscope diagram of the last DBR of this ring-cavity photonic crystal vertical-cavity surface-emitting laser that Fig. 4 provides for first example of the present invention, its centre bore is transferred greatly;
Power-current-voltage curve that this ring-cavity photonic crystal vertical-cavity surface-emitting laser that Fig. 5 provides for first example of the present invention measures.
The far-field distribution that this ring-cavity photonic crystal vertical-cavity surface-emitting laser that Fig. 6 provides for first example of the present invention measures at electric current 34 MAHs.
Among the figure, 1 is bottom electrode, and 2 is n type substrate, and 3 are following DBR, and 4 is active area, and 5 is oxide layer, and 6 is last DBR, and 7 is p type cap rock, and 8 is last annular electrode, and 9 is the air porose area, and 10 is annular bright dipping porose area.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
As shown in Figure 1, Fig. 1 is a this ring-cavity photonic crystal vertical-cavity surface-emitting laser provided by the invention, and this vertical cavity surface emitting laser is made of bottom electrode 1, n type substrate 2, following DBR3, active area 4, oxide layer 5, the last DBR6 that is carved with airport, p type cap rock 7 and last annular electrode 8, air porose area 9 and annular bright dipping porose area 10 from the bottom to top successively.
Airport in the described air porose area 9 is the photonic crystal airport that triangular crystal lattice is arranged, or the photonic crystal airport of tetragonal lattice arrangement.
Described triangular crystal lattice is arranged the photonic crystal airport of photonic crystal airport or tetragonal lattice arrangement, and its cellular is circular air pass, oval air pass or square air pass.
Described annular bright dipping porose area 10 is by the airport area surrounded.
Described air porose area 9 is high loss zones.
The designed oxide-aperture of this vertical cavity surface emitting laser is bigger than the external diameter of annular light hole.
The etching depth of airport is 40%～80% of a last DBR3 thickness in the described air porose area 9.
Described annular electrode 8 evaporations of going up are on the surface of p type cap rock 7, and described bottom electrode 1 evaporation is at the lower surface of n type substrate 2.
The described material of going up annular electrode 8 employings is the TiAu alloy, and the material that bottom electrode 1 adopts is the AuGeNiAu alloy.
The described reflectivity of DBR3 down is higher than the reflectivity of the described DBR6 of going up.
The operation wavelength of the vertical cavity surface emitting laser in this design covers deep ultraviolet to far infrared band.
As shown in Figures 2 and 3, Fig. 2 and Fig. 3 last DBR of being respectively this ring-cavity photonic crystal vertical-cavity surface-emitting laser provided by the invention is carved with the surface topography schematic top plan view that the surface topography schematic top plan view of ring-cavity photonic crystal vertical-cavity surface-emitting laser of the circular airport of photonic crystal that triangular crystal lattice arranges and last DBR are carved with the ring-cavity photonic crystal vertical-cavity surface-emitting laser of the circular airport of photonic crystal that tetragonal lattice arranges.9 is photonic crystal region among the figure, and 10 is annular light hole.The photonic crystal cycle of photonic crystal region 9 is that Λ, duty ratio (diameter of airport and the ratio in cycle) are h for d/ Λ, etching depth.
Based on Fig. 1, Fig. 2 and the described this ring-cavity photonic crystal vertical-cavity surface-emitting laser of Fig. 3, this ring-cavity photonic crystal vertical-cavity surface-emitting laser provided by the invention is described in further detail below in conjunction with specific embodiment.
The operation wavelength of this ring-cavity photonic crystal vertical-cavity surface-emitting laser is 0.85 μ m in the present embodiment.The surface topography schematic top plan view of the last DBR of the vertical cavity surface emitting laser of this example as shown in Figure 4.The bottom electrode of this example is the AuGeNiAu alloy, and the very TiAu alloy that powers on, following DBR are 34.5 couples n type Al
0.12Ga
0.88As/Al
0.9Ga
0.1As, active area are 3 pairs of GaAs/AlGaAs quantum well, and oxide-aperture is 25 μ m, and last DBR is 20.5 couples of p type Al
0.12Ga
0.88As/Al
0.9Ga
0.1As; Last DBR is carved with on the surface the circular airport figure of photonic crystal that triangular crystal lattice is arranged, the diameter of centre bore is 3.8 μ m, an air Kongzui contiguous circle airport in center is removed and has formed annular light hole, the cycle of photonic crystal is 5 μ m, the diameter of airport is 3 μ m, and etching depth is 10 couples of DBR; It around the bright dipping aperture high loss zone that the photonic crystal airport forms.
The measurement result of present embodiment as shown in Figure 5 and Figure 6.Fig. 5 is the power-current-voltage curve that measures according to this ring-cavity photonic crystal vertical-cavity surface-emitting laser that first example of the present invention provides, and its maximum power output is 4.6 milliwatts.Fig. 6 is the far-field distribution that measures at electric current 34 MAHs according to this ring-cavity photonic crystal vertical-cavity surface-emitting laser that first example of the present invention provides, and its halfwidth degree is 7.2 degree.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (11)
1. ring-cavity photonic crystal vertical-cavity surface-emitting laser, it is characterized in that this vertical cavity surface emitting laser is made of bottom electrode (1), n type substrate (2), following DBR (3), active area (4), oxide layer (5), the last DBR (6) that is carved with airport, p type cap rock (7) and last annular electrode (8), air porose area (9) and annular bright dipping porose area (10) from the bottom to top successively.
2. ring-cavity photonic crystal vertical-cavity surface-emitting laser according to claim 1 is characterized in that, the airport in the described air porose area (9) is the photonic crystal airport that triangular crystal lattice is arranged, or the photonic crystal airport of tetragonal lattice arrangement.
3. ring-cavity photonic crystal vertical-cavity surface-emitting laser according to claim 2, it is characterized in that, described triangular crystal lattice is arranged the photonic crystal airport of photonic crystal airport or tetragonal lattice arrangement, and its cellular is circular air pass, oval air pass or square air pass.
4. ring-cavity photonic crystal vertical-cavity surface-emitting laser according to claim 1 is characterized in that, described annular bright dipping porose area (10) is by the airport area surrounded.
5. ring-cavity photonic crystal vertical-cavity surface-emitting laser according to claim 1 is characterized in that, described air porose area (9) is a high loss zone.
6. ring-cavity photonic crystal vertical-cavity surface-emitting laser according to claim 1 is characterized in that, the designed oxide-aperture of this vertical cavity surface emitting laser is bigger than the external diameter of annular light hole.
7. ring-cavity photonic crystal vertical-cavity surface-emitting laser according to claim 1 is characterized in that, the etching depth of airport is 40%～80% of last DBR (a 3) thickness in the described air porose area (9).
8. ring-cavity photonic crystal vertical-cavity surface-emitting laser according to claim 1 is characterized in that, described annular electrode (8) evaporation of going up is on the surface of p type cap rock (7), and described bottom electrode (1) evaporation is at the lower surface of n type substrate (2).
9. ring-cavity photonic crystal vertical-cavity surface-emitting laser according to claim 1 is characterized in that, the described material of going up annular electrode (8) employing is the TiAu alloy, and the material that bottom electrode (1) adopts is the AuGeNiAu alloy.
10. ring-cavity photonic crystal vertical-cavity surface-emitting laser according to claim 1 is characterized in that, the described reflectivity of DBR (3) down is higher than the reflectivity of the described DBR (6) of going up.
11. ring-cavity photonic crystal vertical-cavity surface-emitting laser according to claim 1 is characterized in that, the operation wavelength of this vertical cavity surface emitting laser covers deep ultraviolet to far infrared band.
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| CN103532010A (en) * | 2013-10-25 | 2014-01-22 | 中国科学院半导体研究所 | Single photon emitter and manufacturing method thereof based on high refractive index contrast grating structure |
| CN108923261A (en) * | 2018-10-24 | 2018-11-30 | 常州纵慧芯光半导体科技有限公司 | Dot structure of vertical cavity surface emitting laser and preparation method thereof |
| CN109861078A (en) * | 2019-04-02 | 2019-06-07 | 中国科学院长春光学精密机械与物理研究所 | A kind of surface-emitting laser and a kind of surface emitting laser array |
| CN110690648A (en) * | 2019-07-09 | 2020-01-14 | 上海砷芯科技有限公司 | Laser device |
| WO2021109350A1 (en) * | 2019-12-06 | 2021-06-10 | 北京大学 | Energy band inversion and optical field confinement effect-based topological bulk laser and method |
| CN114300939A (en) * | 2021-12-28 | 2022-04-08 | 北京工业大学 | VCSEL structure with high beam quality and preparation method |
| CN115085004A (en) * | 2022-06-20 | 2022-09-20 | 中国科学院长春光学精密机械与物理研究所 | Semiconductor surface emitting laser based on three-lattice photonic crystal structure |
| CN115356851A (en) * | 2022-08-25 | 2022-11-18 | 中国地质大学（武汉） | Elliptical hole-based high-Q-value silicon-based photonic crystal ring cavity optimization method |
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| CN103532010B (en) * | 2013-10-25 | 2016-09-14 | 中国科学院半导体研究所 | Emitter based on high refractive index contrast optical grating construction and preparation method thereof |
| CN103532010A (en) * | 2013-10-25 | 2014-01-22 | 中国科学院半导体研究所 | Single photon emitter and manufacturing method thereof based on high refractive index contrast grating structure |
| US11196228B2 (en) | 2018-05-04 | 2021-12-07 | Vertilite Co., Ltd. | Encoded pixel structure of vertical cavity surface emitting laser |
| CN108923261A (en) * | 2018-10-24 | 2018-11-30 | 常州纵慧芯光半导体科技有限公司 | Dot structure of vertical cavity surface emitting laser and preparation method thereof |
| CN109861078A (en) * | 2019-04-02 | 2019-06-07 | 中国科学院长春光学精密机械与物理研究所 | A kind of surface-emitting laser and a kind of surface emitting laser array |
| CN109861078B (en) * | 2019-04-02 | 2021-01-05 | 中国科学院长春光学精密机械与物理研究所 | Surface emitting laser and surface emitting laser array |
| CN110690648B (en) * | 2019-07-09 | 2022-05-13 | 上海伍兆电子科技有限公司 | Laser device |
| CN110690648A (en) * | 2019-07-09 | 2020-01-14 | 上海砷芯科技有限公司 | Laser device |
| WO2021109350A1 (en) * | 2019-12-06 | 2021-06-10 | 北京大学 | Energy band inversion and optical field confinement effect-based topological bulk laser and method |
| CN114300939A (en) * | 2021-12-28 | 2022-04-08 | 北京工业大学 | VCSEL structure with high beam quality and preparation method |
| CN114300939B (en) * | 2021-12-28 | 2022-12-02 | 北京工业大学 | VCSEL structure with high beam quality and preparation method |
| CN115085004A (en) * | 2022-06-20 | 2022-09-20 | 中国科学院长春光学精密机械与物理研究所 | Semiconductor surface emitting laser based on three-lattice photonic crystal structure |
| CN115085004B (en) * | 2022-06-20 | 2024-09-20 | 中国科学院长春光学精密机械与物理研究所 | Semiconductor surface emitting laser based on three-lattice photonic crystal structure |
| CN115356851A (en) * | 2022-08-25 | 2022-11-18 | 中国地质大学（武汉） | Elliptical hole-based high-Q-value silicon-based photonic crystal ring cavity optimization method |
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Application publication date: 20101020 |