CN101866981B - 制造太阳能电池的薄膜沉积处理组件、系统及清洗方法 - Google Patents
制造太阳能电池的薄膜沉积处理组件、系统及清洗方法 Download PDFInfo
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- CN101866981B CN101866981B CN2010101530420A CN201010153042A CN101866981B CN 101866981 B CN101866981 B CN 101866981B CN 2010101530420 A CN2010101530420 A CN 2010101530420A CN 201010153042 A CN201010153042 A CN 201010153042A CN 101866981 B CN101866981 B CN 101866981B
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 10
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 8
- 229910001080 W alloy Inorganic materials 0.000 claims description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 7
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- 239000000460 chlorine Substances 0.000 claims description 6
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 5
- 229910052731 fluorine Inorganic materials 0.000 claims description 5
- 239000011737 fluorine Substances 0.000 claims description 5
- 238000005538 encapsulation Methods 0.000 claims description 4
- 239000011261 inert gas Substances 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052801 chlorine Inorganic materials 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 3
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 claims 1
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 10
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- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
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- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
- C23C14/566—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases using a load-lock chamber
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
Description
Claims (15)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20090034021 | 2009-04-20 | ||
KR10-2009-0034021 | 2009-04-20 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101866981A CN101866981A (zh) | 2010-10-20 |
CN101866981B true CN101866981B (zh) | 2013-05-01 |
Family
ID=42958615
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2010101530420A Active CN101866981B (zh) | 2009-04-20 | 2010-04-20 | 制造太阳能电池的薄膜沉积处理组件、系统及清洗方法 |
Country Status (2)
Country | Link |
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KR (1) | KR20100115720A (zh) |
CN (1) | CN101866981B (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102010052689A1 (de) * | 2010-11-26 | 2012-05-31 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Substrathalter für die Oberflächenbehandlung von Substraten und Verwendung des Substrathalters |
CN102560373B (zh) * | 2010-12-16 | 2014-12-17 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 基片加热腔室、使用基片加热腔室的方法及基片处理设备 |
KR101958821B1 (ko) * | 2012-02-06 | 2019-07-02 | 엘지전자 주식회사 | 이온 주입장치 |
KR102017744B1 (ko) * | 2012-12-12 | 2019-10-15 | 삼성디스플레이 주식회사 | 증착 장치, 이를 이용한 박막 형성 방법 및 유기 발광 표시 장치 제조 방법 |
CN105719991A (zh) * | 2016-03-22 | 2016-06-29 | 湖州奥博石英科技有限公司 | 一种石英舟托盘 |
CN111893462B (zh) * | 2020-08-05 | 2022-09-09 | 上海理想万里晖薄膜设备有限公司 | 用于cvd设备的方法及相应的cvd设备 |
CN113351579B (zh) * | 2021-06-07 | 2022-09-13 | 中南大学 | 一种通过等离子清洗处理铜锌锡硫硒薄膜表面的方法 |
CN113903831B (zh) * | 2021-09-29 | 2023-07-25 | 德鸿半导体设备(浙江)有限公司 | 基片处理装置及其方法 |
CN114023621B (zh) * | 2021-10-29 | 2023-07-14 | 德鸿半导体设备(浙江)有限公司 | 一种基片处理系统及其方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1565046A (zh) * | 2002-07-01 | 2005-01-12 | 财团法人地球环境产业技术研究机构 | 具有使用氟气的清洗装置的cvd设备以及在cvd设备中使用氟气的清洗方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6960263B2 (en) * | 2002-04-25 | 2005-11-01 | Applied Materials, Inc. | Shadow frame with cross beam for semiconductor equipment |
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2010
- 2010-04-20 CN CN2010101530420A patent/CN101866981B/zh active Active
- 2010-04-20 KR KR1020100036476A patent/KR20100115720A/ko not_active Application Discontinuation
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1565046A (zh) * | 2002-07-01 | 2005-01-12 | 财团法人地球环境产业技术研究机构 | 具有使用氟气的清洗装置的cvd设备以及在cvd设备中使用氟气的清洗方法 |
Also Published As
Publication number | Publication date |
---|---|
CN101866981A (zh) | 2010-10-20 |
KR20100115720A (ko) | 2010-10-28 |
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PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C53 | Correction of patent of invention or patent application | ||
CB02 | Change of applicant information |
Address after: Gyeonggi Do, South Korea Applicant after: WONIK IPS Co.,Ltd. Address before: Gyeonggi Do, South Korea Applicant before: IPS Co.,Ltd. |
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COR | Change of bibliographic data |
Free format text: CORRECT: APPLICANT; FROM: INTEGRATED PROCESS SYSTEMS LTD. TO: WONIK IPS CO., LTD. |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
C56 | Change in the name or address of the patentee | ||
CP03 | Change of name, title or address |
Address after: Gyeonggi Do Korea Pyeongtaek paint 78-40 (jije Dong strange street) Patentee after: Lap Yi Cmi Holdings Ltd. Address before: Gyeonggi Do, South Korea Patentee before: WONIK IPS Co.,Ltd. |
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TR01 | Transfer of patent right |
Effective date of registration: 20160728 Address after: South Korea Gyeonggi Do Ping Ze Zhenwei Zhenwei group produced 75 road surface Patentee after: WONIK IPS Co.,Ltd. Address before: Gyeonggi Do Korea Pyeongtaek paint 78-40 (jije Dong strange street) Patentee before: Lap Yi Cmi Holdings Ltd. |