CN101866071A - Liquid crystal display panel and method for manufacturing the same - Google Patents
Liquid crystal display panel and method for manufacturing the same Download PDFInfo
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- CN101866071A CN101866071A CN200910165554A CN200910165554A CN101866071A CN 101866071 A CN101866071 A CN 101866071A CN 200910165554 A CN200910165554 A CN 200910165554A CN 200910165554 A CN200910165554 A CN 200910165554A CN 101866071 A CN101866071 A CN 101866071A
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- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 147
- 238000000034 method Methods 0.000 title claims abstract description 60
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 46
- 239000000758 substrate Substances 0.000 claims abstract description 156
- 239000010409 thin film Substances 0.000 claims abstract description 35
- 229920000620 organic polymer Polymers 0.000 claims abstract description 34
- 239000002861 polymer material Substances 0.000 claims abstract description 29
- 239000010410 layer Substances 0.000 claims description 396
- 238000009413 insulation Methods 0.000 claims description 113
- 239000000463 material Substances 0.000 claims description 105
- 239000004065 semiconductor Substances 0.000 claims description 97
- 239000004020 conductor Substances 0.000 claims description 21
- 238000005530 etching Methods 0.000 claims description 16
- 239000011159 matrix material Substances 0.000 claims description 16
- 210000001745 uvea Anatomy 0.000 claims description 14
- 239000004642 Polyimide Substances 0.000 claims description 13
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 13
- 229920001721 polyimide Polymers 0.000 claims description 13
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 13
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 12
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims description 12
- 229910010272 inorganic material Inorganic materials 0.000 claims description 11
- 239000011147 inorganic material Substances 0.000 claims description 11
- 239000007769 metal material Substances 0.000 claims description 11
- 239000002253 acid Substances 0.000 claims description 8
- 229910052715 tantalum Inorganic materials 0.000 claims description 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 239000010408 film Substances 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- 230000006870 function Effects 0.000 description 24
- 239000010931 gold Substances 0.000 description 16
- 238000010586 diagram Methods 0.000 description 15
- 238000001259 photo etching Methods 0.000 description 15
- 238000000059 patterning Methods 0.000 description 14
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 12
- 229910052737 gold Inorganic materials 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 239000011248 coating agent Substances 0.000 description 9
- 238000000576 coating method Methods 0.000 description 9
- 239000011651 chromium Substances 0.000 description 8
- 239000010949 copper Substances 0.000 description 8
- 239000012530 fluid Substances 0.000 description 8
- 239000003292 glue Substances 0.000 description 8
- 239000000565 sealant Substances 0.000 description 8
- 239000010936 titanium Substances 0.000 description 8
- 238000010023 transfer printing Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 238000002161 passivation Methods 0.000 description 6
- 238000007639 printing Methods 0.000 description 6
- 238000004528 spin coating Methods 0.000 description 6
- 239000000956 alloy Substances 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 description 2
- 229920001197 polyacetylene Polymers 0.000 description 2
- 229920000123 polythiophene Polymers 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
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Abstract
The invention provides a liquid crystal display panel and a manufacturing method thereof, the liquid crystal display panel comprises a first substrate and a second substrate which are oppositely arranged and a liquid crystal layer between the two substrates, wherein one surface of the first substrate facing the second substrate is provided with a thin film transistor, a pixel electrode and a grid insulating layer, the grid insulating layer is adjacent to the liquid crystal layer, and the position of the grid insulating layer close to the liquid crystal layer comprises an organic polymer material with a liquid crystal molecule orientation function. The liquid crystal display panel and the manufacturing method thereof simplify the process steps of the liquid crystal display panel, simplify the structure of the liquid crystal display panel and reduce the cost.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly display panels and manufacture method thereof.
Background technology
(Liquid Crystal Display LCD) possesses plurality of advantages such as frivolous, energy-conservation, radiationless to LCD, has therefore replaced traditional cathode ray tube (CRT) display gradually.LCD is widely used in the electronic equipments such as HD digital TV, desk-top computer, PDA(Personal Digital Assistant), notebook computer, mobile phone, digital camera at present.
LCD generally is made up of display panels and outside driving circuit thereof.At present, display panels can according to wherein thin film transistor (TFT) (TFT, manufacturing process thin-film-transistor) is divided into two kinds of top grid and bottom gates, Fig. 1 is the structural representation of the display panels of existing a kind of bottom gate technology.As shown in Figure 1, this liquid crystal panel comprises: the liquid crystal layer 22 between first substrate 10, second substrate 23 and first substrate 10 and second substrate 23 staggered relatively.Concrete described first substrate 10 comprises the grid (GATE) 11 of metal material on the one side of second substrate 23, on the grid (GATE) 11 and first substrate 10, has gate insulation layer 13, the correspondence position of grid 11 has semiconductor material layer 15 on gate insulation layer 13, the drain electrode 17 that on semiconductor material layer 15, has the source electrode 16 and the metal material of metal material, at source electrode 16, has passivation layer 18 on drain electrode 17 and the gate insulation layer 13, have the pixel electrode (ITO) 20 with 17 transparent conductive materials that link to each other that drain on the passivation layer 18, on passivation layer 18 and pixel electrode 20, have liquid crystal aligning layer 21; On liquid crystal aligning layer 21, have liquid crystal layer 22, have second substrate 23 on the described liquid crystal layer 22; Described second substrate 23 is towards the liquid crystal aligning layer 25 that also has on the one side of first substrate 10 on electrode layer 24 and the electrode layer 24.
A kind of manufacture method of making display panels comprises step in the prior art: a glass substrate 10 is provided, and deposit one deck or double-deck first metal material thereon, and, form grid 11 with photoetching process pattern metal material; Deposit forms gate insulation layer 13 on grid 11, is coated with organic semiconductor material layer then, and utilizes photoetching process to be patterned to island, forms semiconductor material layer 15 in the position of grid 11 correspondences of gate insulation layer 13; On semiconductor material layer 15, form metal film, and patterning forms source electrode 16 (source) and drain electrode 17 (drain); In source electrode 16 and drain electrode 17, form passivation layer 18 and form the contact hole that exposes drain electrode 17; Transparent conductive material is deposited on the passivation layer 18 that comprises contact hole, and forms pixel electrode 20 through photoetching, pixel electrode 20 is electrically connected with drain electrode 17 by contact hole; On passivation layer 18 and pixel electrode 20, form liquid crystal aligning layer 21; Then, with substrate 23 and substrate 10 relative fastenings, be carried out to display panels then at the liquid crystal aligning layer 25 that forms successively on second substrate 23 on electrode layer 24 and the electrode layer 24.
Above-mentioned manufacturing approach craft complexity, and the complex structure of the display panels of making, the cost height.
Summary of the invention
Display panels provided by the invention and manufacture method thereof have been simplified the processing step of display panels, and have simplified the structure of display panels, have improved the production yield, have reduced cost.
The invention provides a kind of display panels in order to address the above problem, comprise the liquid crystal layer between first substrate that is oppositely arranged and second substrate and two the described substrates, described first substrate has thin film transistor (TFT), pixel electrode and gate insulation layer on the one side of second substrate, described gate insulation layer and liquid crystal layer are adjacent, and the position of the close liquid crystal layer of described gate insulation layer comprises the organic polymer material with liquid crystal molecular orientation function.
Preferably, described gate insulation layer is the organic polymer material with liquid crystal molecular orientation function.
Preferably, described gate insulation layer comprises that near a side of liquid crystal layer one deck has the organic polymer material of liquid crystal molecular orientation function.
Preferably, described organic polymer material with liquid crystal molecular orientation function comprises: polyimide, polymethylmethacrylate, polymethylacrylic acid cinnamoyloxy group ethyl ester and combination thereof.
Preferably, have semiconductor material layer in described thin film transistor (TFT), described semiconductor material layer is the organic semiconducting materials layer.
Preferably, the source electrode of described thin film transistor (TFT) and drain electrode, and the semiconductor material layer between source electrode and drain electrode is positioned on described first substrate described semiconductor material layer cover part source electrode and drain electrode; In described semiconductor material layer, source electrode and drain electrode, has described gate insulation layer; On the described gate insulation layer of semiconductor material layer correspondence, has grid; On described grid, has described liquid crystal layer.
Preferably, between described semiconductor material layer and described first substrate, has light shield layer.
Preferably, described second real estate has color rete on the one side of described liquid crystal layer.
Preferably, has electrode layer on the described color rete; Have liquid crystal aligning layer on the described electrode layer, described liquid crystal aligning layer is adjacent with described liquid crystal layer.
Preferably, described first substrate has color rete on the one side of second substrate, and described color rete comprises uvea and is positioned at uvea black matrix layer at interval; The semiconductor material layer of described thin film transistor (TFT) is positioned on the described black matrix layer.
Preferably, described second real estate has electrode layer on the one side of liquid crystal layer; Have liquid crystal aligning layer on the described electrode layer, described liquid crystal aligning layer is adjacent with described liquid crystal layer.
Preferably, the material of described source electrode, drain electrode and pixel electrode is a transparent conductive material.
Preferably, also comprise pad electrode on described first substrate, described pad electrode is a transparent conductive material.
Preferably, the grid of described thin film transistor (TFT) is positioned on described first substrate; On described grid, have gate insulation layer, on the described gate insulation layer of described grid correspondence, have semiconductor material layer; On the described gate insulation layer of described semiconductor material layer both sides, have source electrode and drain electrode, and described source electrode and drain electrode cover part semiconductor material layer; On described source electrode, drain electrode and semiconductor material layer, has described liquid crystal layer.
Preferably, the material of described pixel electrode is a transparent conductive material.
Preferably, the inorganic material that also comprises one deck high-k between the grid of described gate insulation layer and described thin film transistor (TFT).
Preferably, the inorganic material of described high-k comprises tantalum pentoxide.
Accordingly, the present invention also provides a kind of manufacture method of display panels, comprises step:
On first substrate, form thin film transistor (TFT) and pixel electrode, and on described pixel electrode, have gate insulation layer;
Dispenser method forms liquid crystal layer;
Fasten second substrate is relative with first substrate;
Wherein, described gate insulation layer comprises the organic polymer material with liquid crystal molecular orientation function near the position of liquid crystal layer.
Preferably, described organic polymer material with liquid crystal molecular orientation function comprises: polyimide, polymethylmethacrylate, polymethylacrylic acid cinnamoyloxy group ethyl ester and combination thereof.
Preferably, have semiconductor material layer in described thin film transistor (TFT), described semiconductor material layer is the organic semiconducting materials layer.
Preferably, the described step that forms thin film transistor (TFT) and pixel electrode on first substrate comprises:
On described first substrate, form light shield layer;
Form the layer of transparent conductive material on described light shield layer and described first substrate, and the transparent conductive material etching is formed source electrode, drain electrode and pixel electrode, wherein the interval location of source electrode and drain electrode is positioned on the light shield layer;
On described light shield layer, form the semiconductor material layer of cover part source electrode and drain electrode;
On described semiconductor material layer and described pixel electrode, form gate insulation layer;
On the gate insulation layer of described semiconductor material layer correspondence, form grid.
Preferably, the described step that forms thin film transistor (TFT) and pixel electrode on first substrate comprises:
Form color film on described first substrate, described color rete comprises uvea and is positioned at uvea black matrix layer at interval;
Form the layer of transparent conductive material on described color rete, and the transparent conductive material etching is formed source electrode, drain electrode and pixel electrode, wherein the interval location of source electrode and drain electrode is positioned on the black matrix layer;
On black matrix layer, form the semiconductor material layer of cover part source electrode and drain electrode;
On described semiconductor material layer and described pixel electrode, form gate insulation layer;
On the gate insulation layer of described semiconductor material layer correspondence, form grid.
Preferably, the described step that forms thin film transistor (TFT) and pixel electrode on first substrate comprises:
On described first substrate, form the grid of metal material and the pixel electrode of transparent conductive material;
On described grid, pixel electrode and first substrate, form gate insulation layer;
On the described gate insulation layer of grid correspondence, form semiconductor material layer;
Form the source electrode and the drain electrode of cover part semiconductor material layer in the semiconductor material layer both sides.
Preferably, in the step that forms thin film transistor (TFT), also be included in the inorganic material that forms one deck high-k between described grid and the described gate insulation layer.
Preferably, the inorganic material of described high-k comprises tantalum pentoxide.
Preferably, the formation method of described tantalum pentoxide is carried out anodic oxidation to grid after being included in the grid that forms tantalum material, forms one deck tantalum pentoxide on grid.
Display panels of the present invention, comprise the liquid crystal layer between first substrate that is oppositely arranged and second substrate and two the described substrates, described first substrate has thin film transistor (TFT) and pixel electrode on the one side of second substrate, has gate insulation layer on the described pixel electrode He in the thin film transistor (TFT), gate insulation layer and liquid crystal layer on the described pixel electrode are adjacent, and the position of the close liquid crystal layer of described gate insulation layer comprises the organic polymer material with liquid crystal molecular orientation function.Compare gate insulation layer in the display panels of the present invention with prior art and realized the effect of liquid crystal aligning layer, therefore saved the liquid crystal aligning layer on first substrate, thereby simplified the structure of display panels.
The manufacture method of display panels of the present invention comprises step: form thin film transistor (TFT) and pixel electrode on first substrate, and have gate insulation layer on described pixel electrode; Dispenser method on described thin film transistor (TFT) and described gate insulation layer forms liquid crystal layer; The relative fastening of liquid crystal layer one side with second substrate and first substrate; Wherein, described gate insulation layer comprises that near the position of liquid crystal layer one deck has the organic polymer material of liquid crystal molecular orientation function.Compare manufacture method of the present invention with prior art and will increase the organic polymer material that one deck has the liquid crystal molecular orientation function in the gate insulation layer, thereby gate insulation layer has been realized the effect of liquid crystal aligning layer in the display panels, therefore save the making step of the liquid crystal aligning layer on first substrate, thereby simplified technology.
Description of drawings
By the more specifically explanation of the preferred embodiments of the present invention shown in the accompanying drawing, above-mentioned and other purpose, feature and advantage of the present invention will be more clear.Reference numeral identical in whole accompanying drawings is indicated identical part.Painstakingly do not draw accompanying drawing, focus on illustrating purport of the present invention by physical size equal proportion convergent-divergent.
Fig. 1 is the structural representation of a kind of display panels of the prior art;
Fig. 2 is the structure of liquid crystal display panel synoptic diagram of first embodiment of the invention;
Fig. 3 is the manufacture method process flow diagram of the display panels of first embodiment of the invention;
Fig. 4-7 is the manufacture method synoptic diagram of the display panels of first embodiment of the invention;
Fig. 8 is the structure of liquid crystal display panel synoptic diagram of second embodiment of the invention;
Fig. 9 is the manufacture method process flow diagram of the display panels of second embodiment of the invention;
Figure 10 is the structure of liquid crystal display panel synoptic diagram of third embodiment of the invention;
Figure 11 is the manufacture method process flow diagram of the display panels of third embodiment of the invention.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, the specific embodiment of the present invention is described in detail below in conjunction with accompanying drawing.
A lot of details have been set forth in the following description so that fully understand the present invention.But the present invention can implement much to be different from alternate manner described here, and those skilled in the art can do similar popularization under the situation of intension of the present invention, so the present invention is not subjected to the restriction of following public concrete enforcement.
Secondly, the present invention utilizes synoptic diagram to be described in detail, when the embodiment of the invention is described in detail in detail; for ease of explanation; the sectional view of expression device architecture can be disobeyed general ratio and be done local the amplification, and described synoptic diagram is example, and it should not limit the scope of protection of the invention at this.The three dimensions size that in actual fabrication, should comprise in addition, length, width and the degree of depth.
The invention provides a kind of display panels, comprise the liquid crystal layer between first substrate that is oppositely arranged and second substrate and two the described substrates, described first substrate has thin film transistor (TFT) and pixel electrode on the one side of second substrate, has gate insulation layer on the described pixel electrode He in the thin film transistor (TFT), gate insulation layer and liquid crystal layer on the described pixel electrode are adjacent, and the position of the close liquid crystal layer of described gate insulation layer comprises the organic polymer material with liquid crystal molecular orientation function.
Embodiment one
Fig. 2 is the structure of liquid crystal display panel synoptic diagram of first embodiment of the invention, below in conjunction with Fig. 2 the structure of the display panels of first embodiment of the invention is described.
As shown in Figure 2, display panels comprises first substrate 210 and second substrate 223 that is oppositely arranged in the present embodiment, and the liquid crystal layer 216 between first substrate 210 and second substrate 223.
Concrete, first substrate 210 and second substrate 223 can be transparent glass material or transparent plastic material.First substrate 210 is towards having on the one side of second substrate 223: light shield layer 211, be positioned at the semiconductor material layer 213 on the light shield layer 211, on first substrate 210 of semiconductor material layer 213 both sides, have the semiconductor material layer of covering subregional source electrode 212a in 213 both sides and drain electrode 212b, on first substrate 210, also have the pixel electrode 212c that links to each other with drain electrode 212b, on first substrate 210, also have liner (PAD) electrode 212d.Wherein, described this light shield layer 211 can prevent thin film transistor (TFT) (TFT, thus thin-film-transisitor) produced the phenomenon of leakage current by illumination.On semiconductor material layer 213, source electrode 212a, drain electrode 212b and pixel electrode 212c, also has gate insulation layer 214, semiconductor material layer 213 correspondence positions on the gate insulation layer 214 have grid 215a, have just had the gate insulation layer 214 of insulating effect between semiconductor material layer 213 and grid 215a; Also have memory capacitance top crown 215b on gate insulation layer 214, memory capacitance top crown 215b and pixel electrode 212c form memory capacitance, have liquid crystal layer 216 on grid 215a and gate insulation layer 214.Be second substrate on the described liquid crystal layer 216.On the one side of liquid crystal layer, has color rete 221 at second real estate, described color rete 221 comprises uvea 221a and is positioned at uvea black matrix layer (BM) 221b at interval, on color rete 221, have electrode layer 219, have liquid crystal aligning layer 222 on the electrode layer 219; Liquid crystal aligning layer 222 is adjacent with liquid crystal layer 216.
Gate insulation layer can be organic polymer material for having the liquid crystal molecular orientation function itself, also can be that gate insulation layer comprises that one deck has the organic polymer of liquid crystal molecular orientation function, concrete in the present embodiment described grid edge layer 214 comprises that one deck has the organic polymer material of liquid crystal molecular orientation function.Thereby because gate insulation layer thickness increases, insulation effect is better.Because the liquid crystal molecule in the display panels need be arranged along specific direction, therefore just must there be one deck liquid crystal molecular orientation layer can make liquid crystal molecule along specific direction orientation.Normally doing one deck liquid crystal molecular orientation layer in the prior art with the liquid crystal layer position adjacent, and in the present invention by comprising that in grid edge layer 214 one deck has the organic polymer material of liquid crystal molecular orientation function, polyimide for example, polymethylmethacrylate, polymethylacrylic acid cinnamoyloxy group ethyl ester and combination thereof, thereby make gate insulation layer have the function of liquid crystal aligning layer, for example can utilize organic polymer material to make gate insulation layer or utilize at gate insulation layer and do the organic polymer material that one deck has the liquid crystal molecular orientation function near the position of liquid crystal layer with liquid crystal molecular orientation function.Concrete, gate insulation layer can be polyimide (PI), polymethylmethacrylate (PMMA), the rhythmo structure of polymethylacrylic acid cinnamoyloxy group ethyl ester (CEMC) and combination and silicon dioxide, gate insulation layer also can be polyimide (PI), polymethylmethacrylate (PMMA), the single layer structure of polymethylacrylic acid cinnamoyloxy group ethyl ester (CEMC) and combination thereof, also has the character of insulation because have the organic polymer material of liquid crystal molecular orientation function, therefore make gate insulation layer both realize that the effect of gate insulator had also realized the effect of liquid crystal molecular orientation like this, thereby can replace the liquid crystal molecular orientation layer, omitted the manufacturing process of liquid crystal molecular orientation layer, and simplified the structure of display panels, improve the product yield, reduced cost.
Wherein, described grid 215a is a metal material, and described metal material comprises: a kind of or its combination in aluminium (Al), molybdenum (Mo), chromium (Cr), tantalum (Ta), titanium (Ti), copper (Cu), silver (Ag) or the gold (Au).Concrete described grid can be individual layer or multilayer alloy structure.
Wherein, in a specific implementation, source electrode 212a, drain electrode 212b, pixel electrode 212c are identical transparent conductive material with liner (PAD) electrode 212d, source electrode 212a, drain electrode 212b, pixel electrode 212c and liner (PAD) electrode 212d can form in a step like this, thereby saved manufacturing step, and because therefore drain electrode 212b and the structure that be connected of pixel electrode 212c for forming simultaneously make that the contact property between drain electrode 212b and the pixel electrode 212c is better.
Wherein, described semiconductor material layer 213 is the organic semiconducting materials layer, for example polythiophene (P3HT), polyacetylene (PA), pentacene (pentacene).Along with the continuous development of OTFT material and OTFT device performance, organic semiconductor device has also had feasibility gradually in the application of field of display.Because organic semiconducting materials is easy to form film-type, pliability is good, conduction is good, the tolerance processes is good, with low cost, and the charge carrier field-effect mobility of organic semiconducting materials (μ eff) has has met or exceeded the mobility of amorphous silicon (a-Si:H), for example the charge carrier field-effect mobility of polythiophene (P3HT) can reach 0.08～1cm2/vs (Appl.Phys.Lett. under different membrance casting conditions, 92 183302,2008), the performance of the TFT that therefore obtains as the active layer of TFT with the organic semiconducting materials instead of amorphous silicon is better.
Between first substrate 210 and second substrate 223, also comprise fluid sealant 217 and transfer printing gold goal glue 218 in addition.Fluid sealant 217 and transfer printing gold goal glue 218 are positioned at the non-display area of the marginal position of first substrate 210 and second substrate 223.
The present invention also provides a kind of manufacture method of display panels, comprises step: form thin film transistor (TFT) and pixel electrode on first substrate, and have gate insulation layer on described pixel electrode; Coating fluid sealant and transfer printing gold goal glue in the non-display area of described first substrate edges; Dispenser method on described thin film transistor (TFT) and described gate insulation layer forms liquid crystal layer; The relative box that is buckled into of liquid crystal layer one side with second substrate and first substrate; Wherein, described gate insulation layer comprises the organic polymer material with liquid crystal molecular orientation function near the position of liquid crystal layer.
Fig. 3 is the manufacture method process flow diagram of the display panels of first embodiment of the invention; Fig. 4-Fig. 7 is the manufacture method synoptic diagram of the display panels of first embodiment of the invention; Be elaborated to the manufacturing process of the display panels of first embodiment shown in Figure 7 manufacture method below in conjunction with Fig. 3 to display panels of the present invention.
As shown in Figure 3, the manufacture method of display panels in the present embodiment comprises the following steps:
S100: on first substrate 210, form light shield layer 211.
This step is specially: as shown in Figure 4, applying a layer thickness on first substrate 210 is the opaque black resin of 200nm, adopts this black resin of photoetching and etching technics patterning to form light shield layer 211 then.Described photoetching process can comprise: photoresist coating, exposure technology, developing process and photoresist stripping process.If this black resin itself has sensitometric characteristic, also can not comprise etching technics.
S110: on light shield layer 211, form source electrode 212a and drain electrode 212b, and on light shield layer 211, source electrode 212a and drain electrode 212b, form semiconductor material layer 213.
This step is specially: as shown in Figure 5, on the light shield layer 211 and first substrate 210, form the nesa coating of one deck 100nm, and utilize photoetching and this conducting film of etching technics patterning, form source electrode 212a, drain electrode 212b, pixel electrode 212c and contact pad designed (contact pad) electrode 212d, the wherein position of the corresponding light shield layer 211 of source electrode 212a and drain electrode 212b interval.Because source electrode 212a among the present invention, drain electrode 212b, pixel electrode 212c and contact pad designed (contact pad) electrode 212d adopt the transparent conductive material of same material, therefore can form in same step, have therefore simplified technology.
Then, can utilize deposition, spin coating or method of printing to form the layer of semiconductor material layer on the upper strata of light shield layer 211, source electrode 212a, drain electrode 212b, pixel electrode 212c and pad electrode 212d.Utilize photoetching and this semiconductor material layer of etching technics patterning then, make the part of its part that covers light shield layer 211, source electrode 212a and drain electrode 212b.The semiconductor material layer 213 of this patterning is the active area of TFT.This semiconductor material is the organic polymer semiconductor material in a specific implementation.
S120: on source electrode 212a, drain electrode 212b, pixel electrode 212c and pad electrode 212d, form gate insulation layer 214, form grid 215a and memory capacitance top crown 215b on gate insulation layer 214, memory capacitance top crown 215b and pixel electrode 212c form memory capacitance.
This step is specially: as shown in Figure 6, utilize deposition, spin coating or method of printing on source electrode 212a, drain electrode 212b, pixel electrode 212c and pad electrode 212d, to form one deck gate insulation layer 214, and by the correspondence position perforate at pad electrode 212d of photoetching and etching technics.This gate insulation layer 214 is the organic polymer material for having the liquid crystal molecular orientation function in a specific implementation, for example polyimide (PI), polymethylmethacrylate (PMMA) etc., perhaps this gate insulation layer 214 also can form the organic polymer material that one deck has the liquid crystal molecular orientation function away from first substrate, one side.
Then, form the metal level of one deck 250nm on gate insulation layer 214, the material of this metal level can be single or multiple lift or the alloy in aluminium (Al), molybdenum (Mo), chromium (Cr), tantalum (Ta), titanium (Ti), copper (Cu), silver (Ag) or the gold (Au).Utilize this metal level of photoetching and etching technics patterning to form grid 215a and memory capacitance top crown 215 then.
S130: on second substrate 223, form color rete 221, on color rete 221, form electrode layer 219, on electrode layer 219, form liquid crystal aligning layer 222, and on the grid 215a of first substrate 210 and gate insulation layer 214, form liquid crystal layer 216.
This step is specially: the one side at second substrate 223 forms color rete 221, forms electrode layer 219 on color rete 221, forms liquid crystal aligning layer 222 on electrode layer 219.Coating fluid sealant 217 and transfer printing gold goal glue 218 on the non-display area at first substrate, 210 edges; Dispenser method forms liquid crystal layer 216 on grid 215a that follows at first substrate 210 and the gate insulation layer 214.
Then, the one side that second substrate 223 is had a liquid crystal aligning layer 222 becomes box towards the liquid crystal layer 216 and first substrate 210 are staggered relatively.
Embodiment two
Fig. 8 is the structure of liquid crystal display panel synoptic diagram of second embodiment of the invention, below in conjunction with Fig. 8 the structure of the display panels of second embodiment of the invention is described.
As shown in Figure 8, display panels comprises first substrate 310 and second substrate 320 that is oppositely arranged in the present embodiment, and the liquid crystal layer 319 between first substrate 310 and second substrate 320.
Concrete, described first substrate 310 has color rete 311 on the one side of second substrate 320, described color rete 311 comprises uvea 311a and is positioned at black matrix layer (BM) 311b at uvea 311a interval, has semiconductor material layer 314 on black matrix layer (BM) 311b upper strata, the position of semiconductor material layer 314 both sides on color rete 311 has source electrode 313a and drain electrode 313b, on color rete 311, also have the pixel electrode 313c that links to each other with drain electrode 313b, on color rete 311, also have pad electrode 312d.On semiconductor material layer 314, source electrode 313a, drain electrode 313b, pixel electrode 313c and pad electrode 313d, have gate insulation layer 315, have grid 316a in the corresponding position of gate insulation layer 315 semiconductor-on-insulator material layers 314; Also have memory capacitance top crown 316b on gate insulation layer 315, memory capacitance top crown 316b and pixel electrode 313c constitute memory capacitance; Having liquid crystal layer 319 on grid 316a and gate insulation layer 315, is second substrate 320 on the liquid crystal layer 319.
Have electrode layer 322 on second substrate 320, have liquid crystal aligning layer 321 on the electrode layer 322; Liquid crystal aligning layer 321 is adjacent with liquid crystal layer 319.Wherein, described grid edge layer 316a comprises that one deck has the organic polymer material of liquid crystal molecular orientation function.
In the present embodiment, described grid edge layer 315 is identical with structure and principle among the embodiment one, repeat no more, difference is, in the present embodiment, removed light shield layer 211, color rete 311 has been arranged on first substrate 310, utilize black matrix layer (BM) 311b of color rete 311 to replace light shield layer like this, thereby further simplify the structure.
In addition, the material of source electrode 313a, drain electrode 313b, pixel electrode 313c, pad electrode 313d and semiconductor material layer 314 can with embodiment one in identical, therefore repeat no more.
Also comprise fluid sealant 318 and transfer printing gold goal glue 317 in addition between first substrate 310 and second substrate 320, fluid sealant 318 and transfer printing gold goal glue 317 are positioned at the non-display area of first substrate 310 and second substrate, 320 edges.
Fig. 9 is the manufacture method process flow diagram of the display panels of second embodiment of the invention.Be elaborated below in conjunction with the manufacturing process of the display panels of second embodiment shown in Figure 9 manufacture method to display panels of the present invention.As shown in Figure 9, the manufacture method of display panels in the present embodiment comprises the following steps:
S200: on first substrate 310, form color rete 311.
This step is specially: form color rete 311 by deposit or typography on first substrate 310.In color rete 311, comprise uvea 311a and black matrix layer (BM) 311b that is positioned at the uvea interval.
S210: on color rete 311, form source electrode 313a, drain electrode 313b, pixel electrode 313c and contact pad designed electrode 313d.
This step is specially: the nesa coating that forms one deck 150nm on color rete 311, and utilize photoetching and this nesa coating of etching technics patterning, form source electrode 313a, drain electrode 313b, pixel electrode 313c and contact pad designed electrode 313d, wherein the position of source electrode 313a and corresponding black matrix layer (BM) 311b of drain electrode 313b.
S220: on the edge of interval and the source electrode 311a of source electrode 313a and drain electrode 313b and the 313b that drains, form semiconductor material layer 314.
This step is specially: can utilize deposition, spin coating or method of printing to form the layer of semiconductor material layer on the upper strata of source electrode 311a and drain electrode 313b, pixel electrode 313c, pad electrode 313d and color rete 311.Utilize photoetching and this semiconductor material layer of etching technics patterning then, make the part of its part that covers source electrode 313a and drain electrode 313b, and cover the interval of source electrode 313a and drain electrode 313b.The semiconductor material layer 314 of this patterning is the active area of TFT.This semiconductor material layer is the organic polymer semiconductor material in a specific implementation.
S230: on semiconductor material layer 314 and pixel electrode 313c, form gate insulation layer 315.
This step is specially: utilize deposition, spin coating or method of printing on source electrode 313a, drain electrode 313b, pixel electrode 313c, pad electrode 313d and semiconductor material layer 314, to form one deck gate insulation layer 315, and by the correspondence position perforate at pad electrode 313d of photoetching and etching technics.This gate insulation layer 315 is the organic polymer material for having the liquid crystal molecular orientation function in a specific implementation, for example polyimide (PI), polymethylmethacrylate (PMMA), polymethylacrylic acid cinnamoyloxy group ethyl ester (CEMC) and combination thereof etc.
S240: on gate insulation layer 315, form grid 316a and memory capacitance top crown 316b.
This step is specially: form the metal level of one deck 250nm on gate insulation layer 315, the material of this metal level can be single or multiple lift or the alloy in aluminium (Al), molybdenum (Mo), chromium (Cr), tantalum (Ta), titanium (Ti), copper (Cu), silver (Ag) or the gold (Au).Utilize this metal level of photoetching and etching technics patterning to form grid 316a and memory capacitance top crown 316b then.
S250: on second substrate 320, form electrode layer 322, on electrode layer 322, form liquid crystal aligning layer 321, and on the grid 316a of first substrate 310 and gate insulation layer 315, form liquid crystal layer 319.
This step is specially: the one side at second substrate 320 forms electrode layer 322, forms liquid crystal aligning layer 321 on electrode layer 322.Coating fluid sealant 318 and transfer printing gold goal glue 317 on first substrate, 310 edge non-display areas; Dispenser method forms liquid crystal layer 319 on grid 316a that follows at first substrate 310 and the gate insulation layer 315.
S260: with first substrate 310 and second substrate, 320 formation display panels staggered relatively.
This step is specially: the one side that second substrate 320 is had liquid crystal aligning layer 321 is staggered relatively towards the liquid crystal layer 319 and first substrate 310.
Embodiment three
Figure 10 is the structural representation of the display panels of third embodiment of the invention, below in conjunction with Figure 10 the structure of the display panels of third embodiment of the invention is described.
As shown in figure 10, display panels comprises liquid crystal layer 418 between first substrate 410 that is oppositely arranged and second substrate 423 and two substrates in the present embodiment.
Concrete, described first substrate 410 and second substrate 423 can be transparent glass material or transparent plastic material.Described first substrate 410 has on the one side of second substrate 423: grid 411a, pixel electrode 412 and pad electrode 411b, at grid 411a, be coated with gate insulation layer 413 on pixel electrode 412 and the pad electrode 411b, on gate insulation layer 413, has semiconductor material layer 414, on the gate insulation layer of semiconductor material layer 414 both sides, have source electrode 415a and drain electrode 415b, described drain electrode 415b links to each other with pixel electrode 412 by the through hole in the gate insulation layer, at source electrode 415a, drain electrode 415b, have liquid crystal layer 418 on semiconductor material layer 414 and the gate insulation layer 413, on liquid crystal layer 418, have second substrate 423.Wherein, described grid edge layer 413 comprises that one deck has the organic polymer material of liquid crystal molecular orientation function.
On second substrate 423, have color rete 421, on color rete 421, have electrode layer 420, on electrode layer 420, have liquid crystal molecular orientation layer 419.
In the present embodiment, described grid edge layer 413 is identical with structure and principle among the embodiment one, repeats no more.
Wherein, described grid 411a, source electrode 415a, drain electrode 415b, pad electrode 411b are metal material, and described metal material comprises: be single or multiple lift or the alloy in aluminium (Al), molybdenum (Mo), chromium (Cr), tantalum (Ta), titanium (Ti), copper (Cu), silver (Ag) or the gold (Au).Concrete, described grid 411a can be individual layer or multilayer alloy.Pixel electrode 412 is a transparent conductive material.
Wherein, described semiconductor material layer 414 is the organic semiconducting materials layer.
Wherein, described gate insulation layer 413 can also comprise the inorganic material of one deck high-k, and the inorganic material of described high-k is positioned at the side of described gate insulation layer 413 near grid 414a.For example concrete gate insulation layer 413 comprises the inorganic material of one deck high-k in the position near grid 414a, tantalum pentoxide for example, because the gate insulation layer of high dielectric constant materials 413 can reduce the threshold voltage of TFT, therefore improved the sensitivity of TFT.
Figure 11 is the manufacture method process flow diagram of the display panels of third embodiment of the invention.Be elaborated below in conjunction with the manufacturing process of the display panels of the 3rd embodiment shown in Figure 11 manufacture method to display panels of the present invention.The manufacture method of display panels in the present embodiment comprises the following steps: as shown in figure 11
S300: on first substrate 410, form grid 411a and pad electrode 411b.
This step is specially: this grid metal level of sputter layer of metal layer and patterning forms grid 411a and pad electrode 411b on first substrate 410.Wherein, in a specific implementation, after the grid that forms the Ta material, form one deck tantalum pentoxide (not shown) on grid 411a surface by anodised method, on the tantalum pentoxide layer, form gate insulation layer 413 then, because tantalum pentoxide is a high dielectric constant material, therefore can reduce the threshold voltage of TFT, the sensitivity that improves TFT.
S310: form pixel electrode 412 on first substrate 410.
This step is specially: at the nesa coating of the 150nm of sputter layer of transparent on 410 on grid 411a, pad electrode 411b and first substrate, utilize photoetching and etching technics then, patterning forms pixel electrode 412.
S320: on grid 411a and pixel electrode 412, form gate insulation layer 413.
This step is specially: the organic polymer gate insulation layer 413 of deposition, spin coating or printing one deck 300nm on grid 411a and pixel electrode 412, and form through hole in the gate insulation layer 413 on pad electrode 411b and pixel electrode 412 by photoetching and etching technics.
S330: on gate insulation layer 413, form semiconductor material layer 414.
This step is specially: the organic polymer semiconductor material layer 414 of deposition, spin coating or printing one deck 200nm on gate insulation layer 413, and patterning keeps the island figure corresponding to top, grid 411a position.
S340: on semiconductor material layer 414, form source electrode 415a, drain electrode 415b and memory capacitance top crown 415c.
This step is specially: form the metal level of one deck 200nm on semiconductor material layer 414 and gate insulation layer 413, this metal level of patterning forms source electrode 415a, drain electrode 415b and memory capacitance top crown 415c.
S350: on second substrate, form color rete 422, on color rete 422, form electrode layer 420, on electrode layer 420, form liquid crystal aligning layer 419, and on semiconductor material layer 414, source electrode 415a, drain electrode 415b and the gate insulation layer 413 of first substrate 410, form liquid crystal layer 418.
This step is specially: the one side at second substrate 423 forms color rete 422, forms electrode layer 420 on color rete 422, forms liquid crystal aligning layer 419 on electrode layer 420.Coating fluid sealant 418 and transfer printing gold goal glue 417 on the non-display area at first substrate, 410 edges; Then dispenser method forms liquid crystal layer 418 on semiconductor material layer 414, source electrode 415a, drain electrode 415b and the gate insulation layer 413 of first substrate 410.
S360: with first substrate 410 and second substrate, 423 formation display panels staggered relatively.
This step is specially: the one side that second substrate 423 is had liquid crystal aligning layer 419 is staggered relatively towards the liquid crystal layer 418 and first substrate 410.
The manufacture method of embodiment three is made in position near first substrate with metal gates, so grid also can play the effect of light shield layer, thereby has omitted the step of making light shield layer, has simplified step and has also made structure simpler.
The above only is preferred embodiment of the present invention, is not the present invention is done any pro forma restriction.
Though the present invention discloses as above with preferred embodiment, yet be not in order to limit the present invention.Any those of ordinary skill in the art, do not breaking away under the technical solution of the present invention scope situation, all can utilize the method and the technology contents of above-mentioned announcement that technical solution of the present invention is made many possible changes and modification, or be revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not break away from technical solution of the present invention, all still belongs in the scope of technical solution of the present invention protection any simple modification, equivalent variations and modification that above embodiment did according to technical spirit of the present invention.
Claims (26)
1. display panels comprises the liquid crystal layer between first substrate that is oppositely arranged and second substrate and two the described substrates, it is characterized in that,
Described first substrate has thin film transistor (TFT), pixel electrode and gate insulation layer on the one side of second substrate, described gate insulation layer and liquid crystal layer are adjacent, and the position of the close liquid crystal layer of described gate insulation layer comprises the organic polymer material with liquid crystal molecular orientation function.
2. display panels according to claim 1 is characterized in that, described gate insulation layer is the organic polymer material with liquid crystal molecular orientation function.
3. display panels according to claim 1 is characterized in that, described gate insulation layer comprises that near a side of liquid crystal layer one deck has the organic polymer material of liquid crystal molecular orientation function.
4. according to claim 2 or 3 described display panels, it is characterized in that described organic polymer material with liquid crystal molecular orientation function comprises: polyimide, polymethylmethacrylate, polymethylacrylic acid cinnamoyloxy group ethyl ester and combination thereof.
5. according to claim 2 or 3 described display panels, it is characterized in that having semiconductor material layer in described thin film transistor (TFT), described semiconductor material layer is the organic semiconducting materials layer.
6. display panels according to claim 1, it is characterized in that, the source electrode of described thin film transistor (TFT) and drain electrode, and the semiconductor material layer between source electrode and drain electrode is positioned on described first substrate described semiconductor material layer cover part source electrode and drain electrode; In described semiconductor material layer, source electrode and drain electrode, has described gate insulation layer; On the described gate insulation layer of semiconductor material layer correspondence, has grid; On described grid, has described liquid crystal layer.
7. display panels according to claim 6 is characterized in that, has light shield layer between described semiconductor material layer and described first substrate.
8. display panels according to claim 7 is characterized in that, described second real estate has color rete on the one side of described liquid crystal layer.
9. display panels according to claim 8 is characterized in that, has electrode layer on the described color rete; Have liquid crystal aligning layer on the described electrode layer, described liquid crystal aligning layer is adjacent with described liquid crystal layer.
10. display panels according to claim 6 is characterized in that, described first substrate has color rete on the one side of second substrate, and described color rete comprises uvea and is positioned at uvea black matrix layer at interval; The semiconductor material layer of described thin film transistor (TFT) is positioned on the described black matrix layer.
11. display panels according to claim 10 is characterized in that, described second real estate has electrode layer on the one side of liquid crystal layer; Have liquid crystal aligning layer on the described electrode layer, described liquid crystal aligning layer is adjacent with described liquid crystal layer.
12. display panels according to claim 6 is characterized in that, the material of described source electrode, drain electrode and pixel electrode is a transparent conductive material.
13. display panels according to claim 12 is characterized in that, also comprises pad electrode on described first substrate, described pad electrode is a transparent conductive material.
14. display panels according to claim 1 is characterized in that, the grid of described thin film transistor (TFT) is positioned on described first substrate; On described grid, have gate insulation layer, on the described gate insulation layer of described grid correspondence, have semiconductor material layer; On the described gate insulation layer of described semiconductor material layer both sides, have source electrode and drain electrode, and described source electrode and drain electrode cover part semiconductor material layer; On described source electrode, drain electrode and semiconductor material layer, has described liquid crystal layer.
15. display panels according to claim 14 is characterized in that, the material of described pixel electrode is a transparent conductive material.
16. display panels according to claim 15 is characterized in that, also comprises the inorganic material of one deck high-k between the grid of described gate insulation layer and described thin film transistor (TFT).
17. display panels according to claim 16 is characterized in that, the inorganic material of described high-k comprises tantalum pentoxide.
18. the manufacture method of a display panels is characterized in that, comprises step:
On first substrate, form thin film transistor (TFT) and pixel electrode, and on described pixel electrode, have gate insulation layer;
Dispenser method forms liquid crystal layer;
Fasten second substrate is relative with first substrate;
Wherein, described gate insulation layer comprises the organic polymer material with liquid crystal molecular orientation function near the position of liquid crystal layer.
19. the manufacture method of display panels according to claim 18, it is characterized in that described organic polymer material with liquid crystal molecular orientation function comprises: polyimide, polymethylmethacrylate, polymethylacrylic acid cinnamoyloxy group ethyl ester and combination thereof.
20. the manufacture method of display panels according to claim 19 is characterized in that, has semiconductor material layer in described thin film transistor (TFT), described semiconductor material layer is the organic semiconducting materials layer.
21. the manufacture method of display panels according to claim 20 is characterized in that, the described step that forms thin film transistor (TFT) and pixel electrode on first substrate comprises:
On described first substrate, form light shield layer;
Form the layer of transparent conductive material on described light shield layer and described first substrate, and the transparent conductive material etching is formed source electrode, drain electrode and pixel electrode, wherein the interval location of source electrode and drain electrode is positioned on the light shield layer;
On described light shield layer, form the semiconductor material layer of cover part source electrode and drain electrode;
On described semiconductor material layer and described pixel electrode, form gate insulation layer;
On the gate insulation layer of described semiconductor material layer correspondence, form grid.
22. the manufacture method of display panels according to claim 20 is characterized in that, the described step that forms thin film transistor (TFT) and pixel electrode on first substrate comprises:
Form color film on described first substrate, described color rete comprises uvea and is positioned at uvea black matrix layer at interval;
Form the layer of transparent conductive material on described color rete, and the transparent conductive material etching is formed source electrode, drain electrode and pixel electrode, wherein the interval location of source electrode and drain electrode is positioned on the black matrix layer;
On black matrix layer, form the semiconductor material layer of cover part source electrode and drain electrode;
On described semiconductor material layer and described pixel electrode, form gate insulation layer;
On the gate insulation layer of described semiconductor material layer correspondence, form grid.
23. the manufacture method of display panels according to claim 18 is characterized in that, the described step that forms thin film transistor (TFT) and pixel electrode on first substrate comprises:
On described first substrate, form the grid of metal material and the pixel electrode of transparent conductive material;
On described grid, pixel electrode and first substrate, form gate insulation layer;
On the described gate insulation layer of grid correspondence, form semiconductor material layer;
Form the source electrode and the drain electrode of cover part semiconductor material layer in the semiconductor material layer both sides.
24. the manufacture method of display panels according to claim 18 is characterized in that, also is included in the inorganic material that forms one deck high-k between described grid and the described gate insulation layer in the step that forms thin film transistor (TFT).
25. the manufacture method of display panels according to claim 24 is characterized in that, the inorganic material of described high-k comprises tantalum pentoxide.
26. the manufacture method of display panels according to claim 25 is characterized in that, the formation method of described tantalum pentoxide is carried out anodic oxidation to grid after being included in the grid that forms tantalum material, forms one deck tantalum pentoxide on grid.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102915963A (en) * | 2011-08-03 | 2013-02-06 | 群康科技(深圳)有限公司 | Thin film transistor substrate, display device employing same and manufacturing method of thin film transistor |
| CN103367165A (en) * | 2013-07-01 | 2013-10-23 | 北京京东方光电科技有限公司 | Thin film transistor, manufacturing method thereof, array substrate and display |
| CN105225724A (en) * | 2014-06-30 | 2016-01-06 | 乐金显示有限公司 | Organic insulating material and comprise its flexible display |
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| CN102915963A (en) * | 2011-08-03 | 2013-02-06 | 群康科技(深圳)有限公司 | Thin film transistor substrate, display device employing same and manufacturing method of thin film transistor |
| CN102915963B (en) * | 2011-08-03 | 2015-06-17 | 群康科技(深圳)有限公司 | Thin film transistor substrate, display device employing same and manufacturing method of thin film transistor |
| CN103367165A (en) * | 2013-07-01 | 2013-10-23 | 北京京东方光电科技有限公司 | Thin film transistor, manufacturing method thereof, array substrate and display |
| WO2015000267A1 (en) * | 2013-07-01 | 2015-01-08 | 京东方科技集团股份有限公司 | Thin film transistor, manufacturing method of same, array substrate, and display |
| US20150214254A1 (en) * | 2013-07-01 | 2015-07-30 | Boe Technology Group Co., Ltd | Thin film transistor, method for fabricating the same, array substrate and display device |
| US10043911B2 (en) * | 2013-07-01 | 2018-08-07 | Boe Technology Group Co., Ltd. | Thin film transistor, method for fabricating the same, array substrate and display device |
| CN105225724A (en) * | 2014-06-30 | 2016-01-06 | 乐金显示有限公司 | Organic insulating material and comprise its flexible display |
| US9748517B2 (en) | 2014-06-30 | 2017-08-29 | Lg Display Co., Ltd. | Organic insulating material and flexible display including the same |
| US10381595B2 (en) | 2014-06-30 | 2019-08-13 | Lg Display Co., Ltd. | Organic insulating material and flexible display including the same |
| CN112051690A (en) * | 2019-06-07 | 2020-12-08 | 夏普株式会社 | Active matrix substrate and liquid crystal display device with touch sensor |
| CN112051690B (en) * | 2019-06-07 | 2023-12-22 | 夏普株式会社 | Active matrix substrate and liquid crystal display device with touch sensor |
| CN114974113A (en) * | 2021-03-16 | 2022-08-30 | 上海天马微电子有限公司 | Display panel and display device |
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