CN101863451B - Method for preparing zinc oxide in three-dimensional nanostructure with cryogenic fluid method - Google Patents
Method for preparing zinc oxide in three-dimensional nanostructure with cryogenic fluid method Download PDFInfo
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- CN101863451B CN101863451B CN201010152393XA CN201010152393A CN101863451B CN 101863451 B CN101863451 B CN 101863451B CN 201010152393X A CN201010152393X A CN 201010152393XA CN 201010152393 A CN201010152393 A CN 201010152393A CN 101863451 B CN101863451 B CN 101863451B
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 title claims abstract description 73
- 238000000034 method Methods 0.000 title claims abstract description 37
- 239000011787 zinc oxide Substances 0.000 title claims abstract description 36
- 239000002086 nanomaterial Substances 0.000 title claims abstract description 7
- 239000012530 fluid Substances 0.000 title description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 27
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 27
- 239000010703 silicon Substances 0.000 claims abstract description 27
- 239000011701 zinc Substances 0.000 claims abstract description 16
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000008367 deionised water Substances 0.000 claims abstract description 10
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 9
- 239000000126 substance Substances 0.000 claims abstract description 8
- 238000003756 stirring Methods 0.000 claims abstract description 7
- 230000008569 process Effects 0.000 claims abstract description 4
- VKYKSIONXSXAKP-UHFFFAOYSA-N hexamethylenetetramine Chemical compound C1N(C2)CN3CN1CN2C3 VKYKSIONXSXAKP-UHFFFAOYSA-N 0.000 claims abstract 4
- ZGTMUACCHSMWAC-UHFFFAOYSA-L EDTA disodium salt (anhydrous) Chemical compound [Na+].[Na+].OC(=O)CN(CC([O-])=O)CCN(CC(O)=O)CC([O-])=O ZGTMUACCHSMWAC-UHFFFAOYSA-L 0.000 claims abstract 2
- 235000010299 hexamethylene tetramine Nutrition 0.000 claims abstract 2
- 239000004312 hexamethylene tetramine Substances 0.000 claims abstract 2
- 238000005498 polishing Methods 0.000 claims description 8
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 4
- 238000004528 spin coating Methods 0.000 claims description 4
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 3
- 239000005416 organic matter Substances 0.000 claims description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 230000007613 environmental effect Effects 0.000 abstract description 2
- 238000002360 preparation method Methods 0.000 description 8
- 239000000243 solution Substances 0.000 description 8
- 239000000758 substrate Substances 0.000 description 6
- 241000220317 Rosa Species 0.000 description 4
- 239000002070 nanowire Substances 0.000 description 4
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000004094 surface-active agent Substances 0.000 description 3
- 230000010148 water-pollination Effects 0.000 description 3
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002173 high-resolution transmission electron microscopy Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- NQTSTBMCCAVWOS-UHFFFAOYSA-N 1-dimethoxyphosphoryl-3-phenoxypropan-2-one Chemical compound COP(=O)(OC)CC(=O)COC1=CC=CC=C1 NQTSTBMCCAVWOS-UHFFFAOYSA-N 0.000 description 1
- RBTBFTRPCNLSDE-UHFFFAOYSA-N 3,7-bis(dimethylamino)phenothiazin-5-ium Chemical compound C1=CC(N(C)C)=CC2=[S+]C3=CC(N(C)C)=CC=C3N=C21 RBTBFTRPCNLSDE-UHFFFAOYSA-N 0.000 description 1
- GDDNTTHUKVNJRA-UHFFFAOYSA-N 3-bromo-3,3-difluoroprop-1-ene Chemical compound FC(F)(Br)C=C GDDNTTHUKVNJRA-UHFFFAOYSA-N 0.000 description 1
- 239000011165 3D composite Substances 0.000 description 1
- KRKNYBCHXYNGOX-UHFFFAOYSA-K Citrate Chemical compound [O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O KRKNYBCHXYNGOX-UHFFFAOYSA-K 0.000 description 1
- RCEAADKTGXTDOA-UHFFFAOYSA-N OS(O)(=O)=O.CCCCCCCCCCCC[Na] Chemical compound OS(O)(=O)=O.CCCCCCCCCCCC[Na] RCEAADKTGXTDOA-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- ZOIORXHNWRGPMV-UHFFFAOYSA-N acetic acid;zinc Chemical compound [Zn].CC(O)=O.CC(O)=O ZOIORXHNWRGPMV-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000009920 chelation Effects 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000004205 dimethyl polysiloxane Substances 0.000 description 1
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002848 electrochemical method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000003760 magnetic stirring Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 229960000907 methylthioninium chloride Drugs 0.000 description 1
- 239000002091 nanocage Substances 0.000 description 1
- 239000002135 nanosheet Substances 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001699 photocatalysis Effects 0.000 description 1
- 238000007146 photocatalysis Methods 0.000 description 1
- 238000013033 photocatalytic degradation reaction Methods 0.000 description 1
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 description 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000000935 solvent evaporation Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000000101 transmission high energy electron diffraction Methods 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
- 239000004246 zinc acetate Substances 0.000 description 1
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Abstract
本发明涉及一种采用低温溶液法制备纳米氧化锌的方法。该方法的具体步骤为：将处理过的单面抛光的硅片进行亲水性处理；将0.1098g Zn(AC)2·2H2O溶于25ml乙醇中，搅拌至充分溶解，然后旋涂在步骤a所得硅片的抛光面上，干燥；将Zn(NO3)2·6H2O(0.025M)和六亚甲基四胺(0.025M)溶于250ml去离子水中搅拌溶解，然后再加入1.16g EDTA-2Na·2H2O，搅拌至充分溶解；将步骤b所得硅片正面朝下悬挂浸没在步骤c所得溶液中，80℃反应4-6个小时，用去离子水清洗后烘干，最后在硅片上得到一层白色物质，即为三维纳米结构的氧化锌。本发明通过低温溶液化学法制备三维纳米结构氧化锌，整个反应过程是在敞口的溶液中进行的，因此避免了高压条件，无需昂贵复杂的仪器和高压反应釜，反应设备简单且具有环境友好、温和的工艺条件。
The invention relates to a method for preparing nanometer zinc oxide by adopting a low-temperature solution method. The specific steps of the method are as follows: the treated single-sided polished silicon wafer is subjected to hydrophilic treatment; 0.1098g Zn(AC) 2 ·2H 2 O is dissolved in 25ml of ethanol, stirred until fully dissolved, and then spin-coated on Dry the polished surface of the silicon wafer obtained in step a; dissolve Zn(NO 3 ) 2 6H 2 O (0.025M) and hexamethylenetetramine (0.025M) in 250ml deionized water and stir to dissolve, then add 1.16g EDTA-2Na·2H 2 O, stir until fully dissolved; hang the silicon chip obtained in step b face down and immerse in the solution obtained in step c, react at 80°C for 4-6 hours, wash with deionized water and dry , and finally a layer of white substance is obtained on the silicon wafer, which is zinc oxide with three-dimensional nanostructure. The present invention prepares three-dimensional nanostructured zinc oxide through a low-temperature solution chemical method, and the entire reaction process is carried out in an open solution, thus avoiding high-pressure conditions, expensive and complicated instruments and high-pressure reactors, simple reaction equipment and environmental friendliness , Mild process conditions.
Description
Technical field
The present invention relates to a kind of nano-ZnO preparation, particularly a kind of method that adopts the cryogenic fluid legal system to be equipped with nano zine oxide.
Background technology
Semi-conducting material is meant that resistivity is 10
-3～10
-8Ω cm, the material between metal and insulator.Semi-conducting material is an important foundation material of making transistor, integrated circuit, power electronic devices, opto-electronic device, is supporting the development of electronics and information industries such as communication, computer and network technologies.ZnO is a kind of important direct wide band gap semiconducter inorganic material; Energy gap under the room temperature is 3.37eV; Its exciton bind energy is 60meV, is higher than GaN (25meV) and ZnSe (22meV), thereby ZnO is easy under room temperature or higher temperature, realize high efficiency Laser emission.ZnO has more stable physicochemical property simultaneously, and it is with a wide range of applications in fields such as solar cell, sensor, an emission, nano generator, photodetector, light emitting diode and photocatalysis.At present, people have adopted many methods to prepare various ZnO nanostructureds, such as vapour deposition process, cryogenic fluid chemical method, cryogenic fluid chemical method, electrochemical method, template, microwave method etc.
In recent years, three-dimensional ZnO nanostructured wherein had the pertinent literature report to adopt the three-dimensional ZnO nanostructured of Hydrothermal Preparation owing to having unique pattern and characteristic to receive much concern.The three dimensional composite structure that the preparation of Z.L.Wang seminar of the georgia ,u.s.a Institute of Technology is made up of ZnO nano wire and optical fiber, this structure significantly improves the energy conversion efficiency of DSSC; The Xu Jia of Shanghai University waits the ZnO structure of people through Hydrothermal Preparation " branch " shape by force, finds that the air-sensitive performance of this structure is more excellent than one-dimensional nano line; People such as the G.Feng of Nanjing University adopt the Hydrothermal Preparation nanocages, and this structure can reduce the catalytic temperature of strong oxidizer ammonium perchlorate, makes it aspect catalyst, certain application prospect arranged.But the three-dimensional ZnO nanostructured of Hydrothermal Preparation has following shortcoming: carry out in (1) airtight container, can't observe growth course, and not directly perceived; (2) equipment requirements high (steel of high temperature high voltage resistant, corrosion resistant liner), technical difficulty big (temperature and pressure control is strict), cost height; (3) poor safety performance.
The solution chemistry method be Uppsala Univ Sweden's physical chemistry to be L.Vayssieres proposed during at preparation ZnO monodimension nanometer material in 2003 first, 90 ℃ realized ZnO on substrate growth and obtained nanometer stick array.After this, this method prepares nano-ZnO and obtains a lot of achievements.People such as the Berkeley branch school P.D.Yang of California, USA university are based on the large-area nanometer rods display of method for preparing excess of export; They change substrate again simultaneously, as: ITO, Sapphire, titanium sheet, dimethione (PDMS) substrate are also prepared the nanometer rods display.Then Yang seminar prepares on the FTO substrate through the cryogenic fluid chemical method that up rightness is good, the big ZnO nano wire of aspect ratio, has successfully developed ZnO nano wire dye-sensitized cell based on these nano wires; People such as the L.D.Zhang of solid institute of the Chinese Academy of Sciences are at Zn (NO
3)
26H
2Adding citric acid in O and the hexa solution receives; Changed the ZnO crystal direction of growth through the citrate influence of surfactant; By the original bar-shaped layered nano-structure that becomes, this structure has big specific area and methylene blue is had good photocatalytic Degradation; People such as C.Ge ' rardin adopt and under the lauryl sodium sulfate Action of Surfactant, prepare ZnO nano-sheet structure with quadrat method.Adopt the cryogenic fluid chemical method to prepare nano material and need not complex device, have simultaneously that cost is lower, easy to operate, equipment is simple, growth conditions is gentle, be fit to advantages such as production in enormous quantities.
Summary of the invention
The object of the present invention is to provide a kind of cryogenic fluid legal system to be equipped with the method for 3-D nano, structure zinc oxide.
For achieving the above object, reaction mechanism of the present invention is following:
(CH
2)
6N
4+6H
2O→6HCHO+4NH
3；
NH
3+H
2O→NH
4 ++OH
-；
2OH
-+Zn
2+→Zn(OH)
2；
2EDTA
-+Zn
2+→[Zn(EDTA)
2]
n
According to above-mentioned mechanism, the present invention adopts following technical scheme:
A kind of cryogenic fluid legal system is equipped with the method for 3-D nano, structure zinc oxide, it is characterized in that the concrete steps of this method are:
The silicon chip of the single-sided polishing that a. will handle carries out hydrophily to be handled;
B. with 0.1098g Zn (AC)
22H
2O is dissolved in the 25ml ethanol, is stirred to abundant dissolving, is spin-coated on the burnishing surface of step a gained silicon chip drying then;
C. with Zn (NO
3)
26H
2O (0.025M) and hexa (0.025M) are dissolved in stirring and dissolving in the 250ml ionized water, and then add 1.16g EDTA-2Na2H
2O is stirred to abundant dissolving;
D. the suspension of step b gained silicon chip face down is immersed in the step c gained solution, 80 ℃ were reacted 4-6 hour, with drying after the washed with de-ionized water, on silicon chip, obtained one deck whiteness at last, were the zinc oxide of 3-D nano, structure.
The concrete grammar that above-mentioned hydrophily is handled is: the silicon chip of the single-sided polishing that will handle is put into the mixed solution of being made up of by 1: 1: 5 volume ratio hydrogen peroxide solution, ammoniacal liquor and deionized water, handles 1 hour down for 85 ℃.
The silicon chip of the single-sided polishing of above-mentioned processing is: the silicon chip of single-sided polishing is put into the organic matter that ethanol and acetone soln each ultrasonic half an hour remove silicon chip surface.
Spin coating among the above-mentioned step b is to be to carry out spin coating under 1000 rev/mins at rotating speed.
The present invention prepares the ZnO 3-D nano, structure through the cryogenic fluid chemical method; Entire reaction course is in uncovered solution, to carry out; Therefore avoided condition of high voltage, need not the instrument and the autoclave of expensive, consersion unit is simple and have environmental friendliness, gentle process conditions.Again because be water as solvent, avoided the safety hazard that causes because of organic solvent evaporation.The growth course of ZnO nanometer flower structure comprises the heterogeneous nucleation on hydrolysis-condensation, dehydration and the substrate of metal ion.The experimentation of this method is under lower temperature (80 ℃), and silicon chip is immersed in given Zn
2+Reacting by heating in the precursor solution of concentration obtains the ZnO nano material on reacted substrate.Owing to add surfactant EDTA-2Na2H
2O, the EDTA molecule will have (0001)-Zn generation chelation of positive charge with polar surface, and this effect will reduce (0001) surface ability, reduces the c axle speed of growth; And the relative growth rate of quickening crystal on side face.Along with the increase in reaction time, obtain " rose " shape ZnO structure of forming by nanometer sheet at last.
Description of drawings:
Fig. 1 is Zn (NO
3)
26H
2O, hexa and EDTA-2Na2H
2O cryogenic fluid method is synthesized " rose " shape structure, field emission scanning electron microscope figure (a, b), transmission electron microscope figure (TEM) (c) and high resolution transmission electron microscopy (d), (c) illustration is SEAD figure (SAED);
Fig. 2 is X-ray diffraction (XRD) collection of illustrative plates.
The specific embodiment
Embodiment one: the preparation of 3-D nano, structure zinc oxide:
(1). the silicon chip of single-sided polishing is put into ethanol, acetone soln each ultrasonic half an hour, removes the organic matter of silicon chip surface; Put into hydrogen peroxide solution (30%), ammoniacal liquor (30%), deionized water (volume ratio 1: 1: 5) mixed solution then, did hydrophily in following 1 hour for 85 ℃ and handle;
(2). take by weighing a certain amount of 0.1098g Zn (AC)
22H
2O puts into ethanol (25ml) solution, is placed on and stirs fully dissolving on the magnetic stirring apparatus.The burnishing surface (5-7 time) of zinc acetate ethanolic solution spin coating (rotating speed: 1000 rev/mins) at silicon chip, oven dry is 1 hour in 100 ℃ of air dry ovens then;
(3). with 1.8593g Zn (NO
3)
26H
2O and 0.8762g hexa are put into the 250ml deionized water, and then add 1.16g EDTA-2Na2H
2The dissolving of O magnetic agitation;
(4). the silicon chip face down after will drying is suspended in (3) solution, and 80 ℃ of reactions 4-6 hour are dried reacted silicon chip after with the deionized water rinsing several times; On silicon chip, obtain one deck whiteness.
The gained whiteness is carried out various signs.Referring to Fig. 1 and Fig. 2.Sample under Fig. 1 (a) low power scanning electron microscopic observation; Fig. 1 (b) is the high resolution scanning Electronic Speculum figure of single flower-like structure, can know from Fig. 1 (b): " rose " shape ZnO structure is to be formed by a plurality of nanometer sheet stackings; Fig. 1 (c) is transmission electron microscope figure, and illustration is the SEAD spot of nanometer sheet, is kind of a hexagonal structure structure; Fig. 1 (d) is high resolution transmission electron microscopy figure, and interplanar distance is 0.282nm among the figure, and is consistent with (10-10) pairing interplanar distance, shows: the ZnO crystal direction of growth is to grow along [10-10] side surface direction.Fig. 2 is the X-ray diffractogram of " rose " shape ZnO; All diffraction maximums are consistent with ZnO standard card (JCPDS card no.36-1451); Mainly contain three diffraction maximums among the figure; (002) peak position obviously is better than (001) and (101) peak position, this with Fig. 1 (a) in a large amount of exposed active face ((0001) face) consistent.
Claims (4)
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| CN102502485A (en) * | 2011-11-10 | 2012-06-20 | 中山大学 | Technical process for imaging nano materials |
| CN102951672B (en) * | 2012-09-27 | 2015-06-24 | 清华大学 | Preparation method of ZnO nanocrystals |
| CN110090642A (en) * | 2019-03-07 | 2019-08-06 | 天津大学 | Copper-based bottom zinc oxide composite and its preparation method and application |
| CN112142092A (en) * | 2019-06-26 | 2020-12-29 | 五邑大学 | ZnO nanosheet and preparation method thereof |
| CN110540229A (en) * | 2019-09-10 | 2019-12-06 | 安徽锦华氧化锌有限公司 | production method of hollow shell nano zinc oxide for rubber tire |
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| CN1560903A (en) * | 2004-03-10 | 2005-01-05 | 上海大学 | Semiconductor substrate material compounded with ZnO nanowires on silicon wafer and preparation method thereof |
| CN1763263A (en) * | 2005-09-27 | 2006-04-26 | 清华大学 | A zinc oxide oriented nanorod or wire film and its preparation method |
| JP4051433B2 (en) * | 2002-09-04 | 2008-02-27 | 独立行政法人産業技術総合研究所 | Zinc oxide polycrystalline tube |
| CN101319372A (en) * | 2008-06-03 | 2008-12-10 | 中山大学 | A low-temperature controllable method for preparing zinc oxide nanowires and its application |
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2010
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Patent Citations (4)
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| JP4051433B2 (en) * | 2002-09-04 | 2008-02-27 | 独立行政法人産業技術総合研究所 | Zinc oxide polycrystalline tube |
| CN1560903A (en) * | 2004-03-10 | 2005-01-05 | 上海大学 | Semiconductor substrate material compounded with ZnO nanowires on silicon wafer and preparation method thereof |
| CN1763263A (en) * | 2005-09-27 | 2006-04-26 | 清华大学 | A zinc oxide oriented nanorod or wire film and its preparation method |
| CN101319372A (en) * | 2008-06-03 | 2008-12-10 | 中山大学 | A low-temperature controllable method for preparing zinc oxide nanowires and its application |
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