CN101860331A - Grid voltage control circuit of TDD radio-frequency amplifier - Google Patents
Grid voltage control circuit of TDD radio-frequency amplifier Download PDFInfo
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- CN101860331A CN101860331A CN 201010120942 CN201010120942A CN101860331A CN 101860331 A CN101860331 A CN 101860331A CN 201010120942 CN201010120942 CN 201010120942 CN 201010120942 A CN201010120942 A CN 201010120942A CN 101860331 A CN101860331 A CN 101860331A
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Abstract
The invention provides a grid voltage control circuit of a TDD radio-frequency amplifier. The circuit comprises a temperature sensor, a micro control unit and a logic gate, wherein the temperature sensor converts the tested environment temperature of the radio-frequency amplifier into a corresponding electrical signal, and transmits the electrical signal to the micro control unit; and the micro control unit inquires a pre-stored grid voltage data table to obtain the grid voltage value corresponding to the electrical signal, and transmits the corresponding grid voltage to a power supply end of a switch circuit, the input end of the switch circuit receives a first switch control signal, the output end outputs a second switch control signal with the same time sequence with the first switch control signal to the grid of the radio-frequency amplifier, and the high level of the second switch control signal corresponds to the grid voltage inputted by the power supply end of the logic gate. The invention can control the grid voltage at high and low temperature more precisely, thereby ensuring the static operating current or the radio-frequency performance of the radio-frequency amplifier to be stable.
Description
Technical field
The present invention relates to wireless communication technology field, refer in particular to a kind of TDD radio frequency amplifier grid voltage control circuit.
Background technology
Along with the development of mobile communication technology, the communication technology of TDD working form is also more and more, uses also more and more widely.Power amplifier has also had very big development as the end of system's transmitting chain thereupon.Simultaneously, because the particularity of TDD working method always adopts the mode of the amplifier tube grid voltage being carried out switch control, to reach purposes such as raising system isolation and reduction system power dissipation.
The LDMOS pipe is the modified model N-channel MOS FET that aims at the design of radio-frequency (RF) power amplification amplifier tube, has positive temperature characterisitic near the working point, promptly under certain grid voltage, when working temperature raises, its quiescent current raises, and when working temperature reduced, its quiescent current reduced.General, when LDMOS pipe heat sink temperature is elevated to 100 when spending from 20 degree, its static working current changes 140%; When temperature is reduced to 0 when spending, variable quantity also has 30%.Static working current changes the indexs such as gain, efficient and linearity of the system that can influence.Therefore the static working current of holding power pipe is stable in the course of the work is one of key point of power board design.
The grid voltage that existing a kind of TDD RF high power LDMOS amplifier gate voltage control circuit comes the self adaptation resonance-amplifier by temperature, thus the static working current of holding power pipe is stable; Grid voltage temperature compensation circuit wherein uses analog circuit to realize that there is bad adaptability in sort circuit, can't control accurately the grid voltage under the high low temperature.
Summary of the invention
The invention provides a kind of TDD radio frequency amplifier grid voltage control circuit, it can carry out more accurate control to the grid voltage under the high low temperature, thereby the static working current that guarantees radio frequency amplifier is stable.
A kind of TDD radio frequency amplifier of the present invention grid voltage control circuit, comprise: temperature sensor, the micro-control unit that is connected with this temperature sensor, the switch switching circuit that is connected with described micro-control unit, the output of described switch switching circuit is connected with the grid of radio frequency amplifier; The residing ambient temperature of the radio frequency amplifier that described temperature sensor will be tested converts the corresponding signal of telecommunication to, and sends this signal of telecommunication to described micro-control unit; The grid voltage tables of data of micro-control unit inquiry pre-stored, obtain the pairing grid voltage value of the described signal of telecommunication, and carry corresponding grid voltage to give the feeder ear of described switch switching circuit, the input of switch switching circuit is imported first switch controlling signal, the output output second switch identical with the described first switch controlling signal sequential of switch switching circuit controls signal to the grid of described radio frequency amplifier, the grid voltage of the corresponding described switch switching circuit feeder ear input of the high level of this second switch control signal.
Particularly, described switch switching circuit can be a gate, also can be field effect transistor FET.
Particularly, this circuit comprises that also emitter follower is connected between described micro-control unit and the described gate, and described emitter follower receives the grid voltage of described micro-control unit output and carries out Signal Spacing; Emitter follower sends described grid voltage to the feeder ear of described gate again.Emitter follower can be isolated its input signal and its output signal, avoids occurring output loading and changes that to cause signal to occur unusual; Particularly, guarantee that promptly the grid voltage that generates can different waveform states not occur because of different loads.
More specifically, this circuit comprises that also filter circuit is connected between described emitter follower and the described gate, and described filter circuit is used for the in addition filtering of spurious signal that the grid voltage with the output of described emitter follower exists, and grid voltage is carried out shaping.
The grid voltage tables of data of pre-stored is that grid voltage temperature characterisitic according to described radio frequency amplifier gets in the described micro-control unit; Represent the magnitude of voltage of different temperatures corresponding one by one in this grid voltage tables of data with different grid voltage values.
Also and be connected with filter capacitor, be used for the second switch control signal of gate output output is carried out filter shape between the grid of described radio frequency amplifier and the described gate; This gate can be selected logic sum gate for use.
Because the present invention obtains corresponding grid voltage by using micro-control unit according to ambient temperature, thereby the grid voltage of radio frequency amplifier tube under the high low temperature is carried out more accurate control, guaranteed that the static working current of radio frequency amplifier or radio-frequency performance keep stable.
Description of drawings
Accompanying drawing 2 is a kind of TDD radio frequency amplifier of the present invention grid voltage control circuit structured flowchart in another embodiment;
Embodiment
With reference to figure 1, comprise at least as the lower part in a kind of TDD radio frequency amplifier of the present invention grid voltage control circuit: temperature sensor 1, MCU micro-control unit 2, switch switching circuit 3, radio frequency amplifier 4; Wherein, the radio frequency amplifier 4 residing ambient temperatures that temperature sensor 1 will be tested convert the corresponding simulating magnitude of voltage to, and become digital voltage value through the analog-to-digital conversion interface conversion of described micro-control unit 2; The grid voltage tables of data of micro-control unit 2 inquiry pre-stored, obtain the feeder ear that the pairing grid voltage of described digital voltage value flows to described switch switching circuit 3, the input of switch switching circuit 3 is imported first switch controlling signal, the output output second switch of switch switching circuit 3 controls signal to the grid of described radio frequency amplifier 4, the grid voltage of the corresponding switch switching circuit 3 feeder ears input of the high level of this second switch control signal.
Certainly, temperature sensor also can be a digital temperature sensor, and it can so just not need can directly send micro-control unit to through the analog-to-digital conversion interface directly with the corresponding digital voltage of ambient temperature conversion output.Switch switching circuit can be a gate, also can be field effect transistor FET.
The present invention is according to the grid voltage tables of data of pre-stored in the micro-control unit, obtains the pairing grid voltage value of current environmental temperature, and the grid voltage that will obtain is added to the grid of radio frequency amplifier, does making control precision higher like this; Thereby the grid voltage to radio frequency amplifier tube under the high low temperature is carried out more accurate control, has guaranteed that the static working current of radio frequency amplifier is kept stable.In described grid voltage tables of data, ambient temperature is generally every corresponding grid voltage value once, for example: the grid voltage of ambient temperature correspondence when 20 spend is X1mv, and the grid voltage of ambient temperature correspondence when 21 spend is X2mv, and the grid voltage of ambient temperature correspondence when 22 spend is X3mv The grid voltage precision is to be determined by the DA figure place among the MCU, requires will select 12 DA less than 1mv such as the grid voltage control precision; If control precision less than 5mv, then can be selected 10 DA.In concrete the application, need select suitable DA figure place at different accuracy requirement.
Fig. 2 is a kind of preferred forms of a kind of TDD radio frequency amplifier of the present invention grid voltage control circuit, and it has added emitter follower 5 and filter circuit 6 in Fig. 1; Wherein emitter follower is connected in the output of micro-control unit 2, and emitter follower receives the grid voltage of micro-control unit 2 outputs and carries out Signal Spacing; Emitter follower sends grid voltage to filter circuit 6 again, in order to the in addition filtering of the spurious signal that exists in the grid voltage with emitter follower output; And then filtered grid voltage is sent to the feeder ear of logic sum gate 3.Wherein emitter follower 5 can be isolated its input signal and its output signal, avoids occurring output loading and changes that to cause signal to occur unusual; Particularly, guarantee that promptly the grid voltage that generates can different waveform states not occur because of different loads.
Particularly, the physical circuit figure of a kind of TDD radio frequency amplifier grid voltage control circuit of above-mentioned Fig. 2 is with reference to figure 3, temperature sensor 1 converts the ambient temperature of actual measurement to aanalogvoltage, analog-to-digital conversion mouth (ADC0) through MCU is sent to MCU micro-control unit 2 inside then, MCU micro-control unit 2 varies with temperature the tables of data of making according to grid voltage, obtain corresponding digital grid voltage, convert corresponding simulation grid voltage to through digital-to-analogue conversion mouth (DAC0) and offer emitter follower 5; Deliver to the feeder ear of logic sum gate 3 (or other logic gates) then by filter circuit 6.An input at logic sum gate adds TDD switch switching signal (being the first above-mentioned switch controlling signal), thereby identical second switch control signal on control logic or the door output timing, the grid voltage of the high level counterlogic of this second switch control signal or the input of door feeder ear; The second switch control signal is added to the grid of radio frequency amplifier tube 4, the conducting and the shutoff of control amplifier tube 4 radiofrequency signals; So just realized the grid voltage adaptive equalization under the high low temperature condition, thereby the static working current that has guaranteed radio frequency amplifier is kept stable.
Because radio frequency amplifier 4 adopts the LDMOS pipe mostly, its temperature characterisitic is as follows: under the certain situation of static working current, when temperature raise, gate bias voltage needed to reduce, and when temperature reduced, gate bias voltage needed to raise; According to this temperature characterisitic of LDMOS pipe, calculate acquisition under the certain situation of static working current by the current experiments test, the corresponding required grid voltage value of LDMOS pipe is made into a data form stores in the MCU micro-control unit during different temperatures value; Apparently, because different radio frequency amplifier tubes has different temperature characterisitics, so the data form of producing also can be different.Owing to obtain the pairing grid voltage of Current Temperatures by tables of data, the grid voltage that obtains like this is more near radio frequency amplifier tube needed grid voltage this moment, thereby the operating state of more accurate control radio frequency amplifier tube makes the static working current of radio frequency amplifier tube keep stable.
With reference to figure 3, the grid input of radio frequency amplifier tube 3 has radiofrequency signal, radiofrequency signal inputs to grid by a capacitance, and the second switch control signal of logic sum gate output is added to conducting and the shutoff of the grid of radio frequency amplifier tube 3 with control radio frequency amplifier tube 3 after by filter capacitor C6 and C7 filtering; The drain electrode of radio frequency amplifier tube 3 links to each other with DC power supply by three filter capacitors, is connected with the radiofrequency signal output in drain electrode simultaneously; The former utmost point ground connection of radio frequency amplifier tube 3.
The grid voltage of MCU micro-control unit DAC0 port output can guarantee out that through a pull down resistor device does not appear damaging in electric moment; The II type filter circuit that filter circuit 6 is made up of electric capacity, inductance, but the spuious and ripple of its filtering low frequency etc.
Compare with existing implementation method, the present invention overcome control precision poor, can't realize defectives such as any temperature compensation curve.
Therefore, the present invention particularly in the higher power amplifier of height temperature control required precision, can have good prospects for application in the radio frequency amplifier tube grid voltage control of all TDD standards.
Above-described embodiment of the present invention does not constitute the qualification to protection range of the present invention.Any modification of being done within the spirit and principles in the present invention, be equal to and replace and improvement etc., all should be included within the claim protection range of the present invention.
Claims (10)
1. TDD radio frequency amplifier grid voltage control circuit, it is characterized in that, this circuit comprises: temperature sensor, the micro-control unit that is connected with this temperature sensor, the switch switching circuit that is connected with described micro-control unit, and the output of described switch switching circuit is connected with the grid of described radio frequency amplifier;
The residing ambient temperature of the radio frequency amplifier that described temperature sensor will be tested converts the corresponding signal of telecommunication to, and sends this signal of telecommunication to described micro-control unit; The grid voltage tables of data of micro-control unit inquiry pre-stored obtains the pairing grid voltage value of the described signal of telecommunication, and carry corresponding grid voltage to give the feeder ear of described switch switching circuit, the input of described switch switching circuit receives first switch controlling signal, the output output second switch identical with the described first switch controlling signal sequential controls signal to the grid of described radio frequency amplifier, the grid voltage of the corresponding described gate feeder ear input of the high level of this second switch control signal.
2. TDD radio frequency amplifier grid voltage control circuit as claimed in claim 1, it is characterized in that: described switch switching circuit is a gate.
3. TDD radio frequency amplifier grid voltage control circuit as claimed in claim 1, it is characterized in that: described switch switching circuit is field effect transistor FET.
4. TDD radio frequency amplifier grid voltage control circuit as claimed in claim 2, it is characterized in that: this circuit comprises that also emitter follower is connected between described micro-control unit and the described gate, and described emitter follower receives the grid voltage of described micro-control unit output and carries out Signal Spacing; Emitter follower sends described grid voltage to the feeder ear of described gate again.
5. TDD radio frequency amplifier grid voltage control circuit as claimed in claim 4, it is characterized in that: this circuit comprises that also filter circuit is connected between described emitter follower and the described gate, and described filter circuit is used for the in addition filtering of spurious signal that the grid voltage with the output of described emitter follower exists.
6. TDD radio frequency amplifier grid voltage control circuit as claimed in claim 5 is characterized in that: the grid voltage tables of data of pre-stored is that grid voltage temperature characterisitic according to described radio frequency amplifier gets in the described micro-control unit; Represent the magnitude of voltage of the signal of telecommunication of different temperatures corresponding one by one in this grid voltage tables of data with different grid voltage values.
7. TDD radio frequency amplifier grid voltage control circuit as claimed in claim 6, it is characterized in that: the signal of telecommunication of described temperature sensor output is an aanalogvoltage, the input of described micro-control unit also comprises the analog-to-digital conversion port, and output also comprises the digital-to-analogue conversion port;
This aanalogvoltage becomes described digital voltage value through the analog-to-digital conversion port translation of described micro-control unit; The grid voltage tables of data of micro-control unit inquiry pre-stored obtains the pairing grid voltage value of described digital voltage value, and this grid voltage value becomes the simulation gate voltage signal to flow to the feeder ear of described gate by described digital-to-analogue conversion port translation.
8. TDD radio frequency amplifier grid voltage control circuit as claimed in claim 6, it is characterized in that: described temperature sensor is a digital temperature sensor, and the output of described micro-control unit also comprises the digital-to-analogue conversion port; The signal of telecommunication of temperature sensor output is a digital voltage, the grid voltage tables of data of micro-control unit inquiry pre-stored, obtain the pairing grid voltage value of this digital voltage, this grid voltage value becomes the simulation gate voltage signal to flow to the feeder ear of described gate by described digital-to-analogue conversion port translation.
9. as claim 7 or 8 described TDD radio frequency amplifier grid voltage control circuits, it is characterized in that: also and be connected with filter capacitor, be used for the second switch control signal of gate output output is carried out filter shape between the grid of described radio frequency amplifier and the described gate.
10. TDD radio frequency amplifier grid voltage control circuit as claimed in claim 9, it is characterized in that: described gate is a logic sum gate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010120942 CN101860331A (en) | 2010-03-04 | 2010-03-04 | Grid voltage control circuit of TDD radio-frequency amplifier |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010120942 CN101860331A (en) | 2010-03-04 | 2010-03-04 | Grid voltage control circuit of TDD radio-frequency amplifier |
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| CN101860331A true CN101860331A (en) | 2010-10-13 |
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| CN 201010120942 Pending CN101860331A (en) | 2010-03-04 | 2010-03-04 | Grid voltage control circuit of TDD radio-frequency amplifier |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102355206A (en) * | 2011-08-01 | 2012-02-15 | 中兴通讯股份有限公司 | Power amplifier and gain compensation method for same |
| CN103956979A (en) * | 2014-04-01 | 2014-07-30 | 京信通信技术(广州)有限公司 | Power supply control device for power amplifier tube and power-on and power-off control method thereof |
| CN109450386A (en) * | 2018-10-24 | 2019-03-08 | 广州天电科技有限公司 | A kind of control device of TDD power amplifier |
| CN109462388A (en) * | 2018-10-22 | 2019-03-12 | 京信通信系统（中国）有限公司 | GaN HEMT control circuit |
| CN109889172A (en) * | 2019-03-13 | 2019-06-14 | 西安玄黄通信技术有限公司 | A kind of TDD power amplifier based on CPLD quickly receives and dispatches switching circuit |
| CN111628760A (en) * | 2020-06-12 | 2020-09-04 | 深圳国人无线通信有限公司 | Grid voltage switching device |
| CN115632620A (en) * | 2022-12-22 | 2023-01-20 | 成都嘉纳海威科技有限责任公司 | Three-channel amplification and filtering multifunctional chip |
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| CN101098124A (en) * | 2007-07-16 | 2008-01-02 | 浙江三维通信股份有限公司 | TDD RF high power LDMOS amplifier gate voltage control circuit |
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| WO2009117982A2 (en) * | 2008-03-28 | 2009-10-01 | Eads Deutschland Gmbh | Method and device for compensating amplification variations in an amplifier circuit |
| CN201623690U (en) * | 2010-03-04 | 2010-11-03 | 京信通信系统（中国）有限公司 | TDD (Time Division Duplex) radio-frequency amplifier gate voltage control circuit |
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| JPS5750106A (en) * | 1980-09-10 | 1982-03-24 | Nec Corp | Transistor circuit |
| CN101485097A (en) * | 2006-08-04 | 2009-07-15 | 松下电器产业株式会社 | Transmission circuit and communication apparatus |
| CN101098124A (en) * | 2007-07-16 | 2008-01-02 | 浙江三维通信股份有限公司 | TDD RF high power LDMOS amplifier gate voltage control circuit |
| WO2009117982A2 (en) * | 2008-03-28 | 2009-10-01 | Eads Deutschland Gmbh | Method and device for compensating amplification variations in an amplifier circuit |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102355206A (en) * | 2011-08-01 | 2012-02-15 | 中兴通讯股份有限公司 | Power amplifier and gain compensation method for same |
| CN103956979A (en) * | 2014-04-01 | 2014-07-30 | 京信通信技术(广州)有限公司 | Power supply control device for power amplifier tube and power-on and power-off control method thereof |
| CN103956979B (en) * | 2014-04-01 | 2018-05-15 | 京信通信系统（中国）有限公司 | The power supply control apparatus of power amplifier tube and its power on, lower electric control method |
| CN109462388A (en) * | 2018-10-22 | 2019-03-12 | 京信通信系统（中国）有限公司 | GaN HEMT control circuit |
| CN109450386A (en) * | 2018-10-24 | 2019-03-08 | 广州天电科技有限公司 | A kind of control device of TDD power amplifier |
| CN109450386B (en) * | 2018-10-24 | 2022-06-03 | 广州天电科技有限公司 | Control device of TDD power amplifier |
| CN109889172A (en) * | 2019-03-13 | 2019-06-14 | 西安玄黄通信技术有限公司 | A kind of TDD power amplifier based on CPLD quickly receives and dispatches switching circuit |
| CN109889172B (en) * | 2019-03-13 | 2023-03-31 | 西安玄黄通信技术有限公司 | TDD power amplifier fast receiving and dispatching switching circuit based on CPLD |
| CN111628760A (en) * | 2020-06-12 | 2020-09-04 | 深圳国人无线通信有限公司 | Grid voltage switching device |
| CN115632620A (en) * | 2022-12-22 | 2023-01-20 | 成都嘉纳海威科技有限责任公司 | Three-channel amplification and filtering multifunctional chip |
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Application publication date: 20101013 |