CN101859789A - Alternating current light-emitting device with effect of increasing light extraction efficiency and manufacturing method thereof - Google Patents
Alternating current light-emitting device with effect of increasing light extraction efficiency and manufacturing method thereof Download PDFInfo
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- CN101859789A CN101859789A CN200910131539A CN200910131539A CN101859789A CN 101859789 A CN101859789 A CN 101859789A CN 200910131539 A CN200910131539 A CN 200910131539A CN 200910131539 A CN200910131539 A CN 200910131539A CN 101859789 A CN101859789 A CN 101859789A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
- H01L2224/241—Disposition
- H01L2224/24135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/24137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
Abstract
The invention discloses an alternating current light-emitting device with the effect of increasing the light extraction efficiency, a first light-emitting diode and a second light-emitting diode are arranged on a substrate, the substrate comprises a plurality of grooves, a separation space is arranged between the first light-emitting diode and the second light-emitting diode for isolating the light-emitting diodes, and the first light-emitting diode is connected with the second light-emitting diode through a conductor, thereby leading the alternating current light-emitting device to be capable of completely using alternating current to emit light. The invention further discloses a manufacturing device of the alternating current light-emitting device. The alternating current light-emitting device can reflect the light to the side surface with the help of the plurality of the grooves of the substrate, thereby solving the problem that the light radiated from a light-emitting layer to the substrate can not be completely spread to the side surfaces of the light-emitting diodes and the luminous efficiency is thus reduced, improving the light extraction efficiency of the first light-emitting diode and the second light-emitting diode and improving the luminous efficacy of the alternating current light-emitting device.
Description
Technical field
The present invention relates to a kind of light-emitting device, particularly relate to a kind of AC illuminator that increases light taking-up efficient that has; The invention still further relates to the manufacture method of described AC illuminator.
Background technology
Fast development along with opto-electronics, as one light-emitting diode (LED Light Emitting Diode) of light source owing to have the characteristics of power saving, be widely used in the field in various illuminations or light requirement source in a large number, and light-emitting diode occupies critical role in photoelectric field.Just because of this, countries in the world manufacturer there's no one who doesn't or isn't drops into the exploitation of ample resources in correlation technique, and the development trend of AC system light-emitting diode (AC LED) product more has been described in the product presentations of 2005 Seoul, South Korea semiconductor and American I II-N Technology, become the developing trend of global light-emitting diode manufacturer.
From the technical development of AC system light-emitting diode so far, the major technology development is to improve the electrical problem of AC system light-emitting diode.For example: the AC system light-emitting diode can't be when alternating current positive-negative half-cycle signal be imported all can luminous (full-time luminous) problem, thereby develop and a kind of bridge-type AC system light emitting diode construction, it mainly utilizes the rectification design concept of Wheatstone bridge (Wheatstone Bridge), so that light-emitting diode each moment when alternating current positive-negative half-cycle signal is imported only have the luminous phenomenon of AC system electroluminescent diode of sum 1/2 to be improved, and can be full-time luminous.
Yet, still have it expansionary at optical characteristics in the AC system light emitting diode construction now, for example: the improvement of total reflection problem.Because after the luminescent layer of AC system light-emitting diode produced light, most of light was to transmit in the AC system light emitting diode construction, and the light in the AC system light emitting diode construction needs just can be passed to outside the AC system light emitting diode construction through the mode of refraction; But the angle of light refraction is limited, and when the incident angle of light surpassed the angular range that can reflect, total reflection can take place light, thereby causes part light still in the AC system light emitting diode construction, but can't pass out outside the AC system light emitting diode construction; So the AC system light-emitting diode can't be brought into play original luminous efficacy.
In addition, the luminescent layer of AC system light-emitting diode exposes in the light of substrate, part light is straight ahead, thus cause part light only can be absorbed by substrate or substrate and luminescent layer between come back reflective, light but can't be propagated toward the side of AC system light-emitting diode.So the luminous energy that absorbed of substrate will transfer heat energy to and disperse, thus cause the luminous efficacy of AC system light-emitting diode to reduce and cause overheated.
Comprehensively above-mentioned, the use that is designed primarily to light source of AC system light-emitting diode, how improving its luminous efficiency is a major subjects, and that the AC system light-emitting diode is used in human family is comparatively extensive, is the problem of a maximum so solve the above problems reality.
Summary of the invention
The technical problem to be solved in the present invention provides a kind of AC illuminator that increases light taking-up efficient that has, and can effectively increase light and take out efficient; For this reason, the present invention also will provide a kind of manufacture method of described AC illuminator.
For solving the problems of the technologies described above, one of technical scheme that AC illuminator adopted with increase light taking-up efficient of the present invention is to comprise:
One substrate, it has plural groove;
One first light-emitting diode is arranged on the described plural groove;
One second light-emitting diode is arranged on the described plural groove; And
One conductor, it couples described first light-emitting diode and described second light-emitting diode, have a compartment between described first light-emitting diode and described second light-emitting diode, described first light-emitting diode and described second light-emitting diode can be luminous according to an alternating current.
The manufacture method of above-mentioned AC illuminator is:
Provide a substrate and etching plural number groove on described substrate;
Form one first light-emitting diode and one second light-emitting diode respectively on described plural groove, have a compartment between described first light-emitting diode and described second light-emitting diode; And
One conductor is set on the described compartment and connect described first light-emitting diode and described second light-emitting diode.
Of the present invention have increase light take out efficient the technical scheme that AC illuminator adopted two be to comprise:
One accepts substrate, has plural groove, one first conductive layer, one second conductive layer and one the 3rd conductive layer;
One first light-emitting diode, be arranged on the described plural groove, described first light-emitting diode comprises one first electrode and one second electrode, and described second electrode connects described first conductive layer by one first projection, and described first electrode connects described second conductive layer by one second projection; And
One second light-emitting diode, be arranged on the described plural groove, described second light-emitting diode comprises a third electrode and one the 4th electrode, described third electrode connects described the 3rd conductive layer by one the 3rd projection, described the 4th electrode connects described second conductive layer by one second projection, have a compartment between described first light-emitting diode and described second light-emitting diode, described first light-emitting diode and described second light-emitting diode are luminous according to an alternating current by described first conductive layer, described second conductive layer and described the 3rd conductive layer.
The manufacture method of above-mentioned AC illuminator is:
Provide one to accept substrate and etching plural number groove and accept on the substrate in described, and described accept have one first conductive layer on the substrate, one second conductive layer and one the 3rd conductive layer;
Provide one to share substrate, corresponding described plural groove forms one first light-emitting diode and one second light-emitting diode respectively on described shared substrate, tool one compartment between described first light-emitting diode and described second light-emitting diode; And
Described shared substrate overturns, make described first light-emitting diode connect described first conductive layer with one first projection, make described first light-emitting diode be connected described second conductive layer with one second projection, make described second light-emitting diode connect described the 3rd conductive layer with one the 3rd projection with described second light-emitting diode; And
Separate described shared substrate from described first light-emitting diode with described second light-emitting diode.
Owing to adopt AC illuminator of the present invention and manufacture method thereof, can by the plural groove that substrate had light be reflexed to the side by nationality, the light that exposes to substrate with the solution luminescent layer can't be propagated toward the side of light-emitting diode fully, reduce the problem of its luminous efficiency, the light that improves first light-emitting diode and second light-emitting diode takes out efficient, thereby improves the luminous efficacy of AC illuminator.
In addition, adopt AC illuminator of the present invention and manufacture method thereof, can also nationality by diffusing structure, make AC illuminator increases increases electrode on the basis that light takes out efficient contact area.
Description of drawings
The present invention is further detailed explanation below in conjunction with accompanying drawing and embodiment
Fig. 1 is embodiments of the invention one structural representations;
Fig. 2 is embodiments of the invention two structural representations;
Fig. 3 is embodiments of the invention three structural representations;
Fig. 4 A is embodiments of the invention four structural representations;
Fig. 4 B is embodiments of the invention five structural representations;
Fig. 5 A to 5D is the embodiment circuit diagram of AC illuminator of the present invention.
Fig. 6 A to 6D is the structural representation of semiconductor epitaxial layer one embodiment among the present invention;
Fig. 7 A to 7D is the structural representation of another embodiment of semiconductor epitaxial layer among the present invention;
Fig. 8 A to 8C is a manufacturing process schematic diagram embodiment illustrated in fig. 1;
Fig. 9 A to 9D is a manufacturing process schematic diagram embodiment illustrated in fig. 2;
Figure 10 is embodiments of the invention five structural representations;
Figure 11 is embodiments of the invention six structural representations;
Figure 12 is embodiments of the invention seven structural representations;
Figure 13 is embodiments of the invention eight structural representations;
Figure 14 is embodiments of the invention nine structural representations;
Figure 15 is embodiments of the invention ten structural representations;
Figure 16 A, 16B are embodiments of the invention 11 structural representations;
Figure 17 A to 17D is another embodiment circuit diagram of AC illuminator of the present invention;
Figure 18 A to 18D is an example structure schematic diagram again of semiconductor epitaxial layer among the present invention;
Figure 19 A to 19D is another preferred embodiment structural representation of semiconductor epitaxial layer among the present invention;
Figure 20 A to 20E is a manufacturing process schematic diagram embodiment illustrated in fig. 10;
Figure 21 A to 21E is a manufacturing process schematic diagram embodiment illustrated in fig. 11.
Symbol description among the figure:
10 is AC illuminator; 12 is substrate; 122 is groove;
124 is the compartment; 130 is first conductive layer; 132 is second conductive layer;
134 is the 3rd conductive layer; 14 is first light-emitting diode; 142 is the epitaxial layer stack layer;
144 is n type semiconductor layer; 146 is luminescent layer; 148 is p type semiconductor layer;
150 is first electrode; 152 is second electrode; 154 is diffusing structure;
16 is second light-emitting diode; 162 is the epitaxial layer stack layer; 164 is n type semiconductor layer;
166 is luminescent layer; 168 is p type semiconductor layer; 170 is first electrode;
172 is second electrode; 174 is diffusing structure; 18 is conductor;
20 is insulating barrier; 22 is energy conversion layer; 222 is diffusing structure;
30 is bridge rectifier; 40 is the semiconductor epitaxial layer; 42 is the epitaxial layer stack layer;
422 is second electrode; 44 is n type semiconductor layer; 442 is first electrode;
46 is luminescent layer; 48 is p type semiconductor layer; 482 is second electrode;
50 is the crystal covering type AC illuminator; 510 is first projection;
512 is second projection; 514 is the 3rd projection; 52 for accepting substrate;
522 is groove; 54 is first light-emitting diode; 524 is dielectric layer;
540 is diffusing structure; 542 is the epitaxial layer stack layer; 544 is n type semiconductor layer;
546 is luminescent layer; 548 is p type semiconductor layer; 550 is first electrode;
552 is second electrode; 554 is transparency carrier; 556 is diffusing structure;
56 is second light-emitting diode; 560 is diffusing structure;
562 is the epitaxial layer stack layer; 564 is n type semiconductor layer; 566 is luminescent layer;
568 is p type semiconductor layer; 570 is first electrode; 572 is second electrode;
574 is transparency carrier; 576 is diffusing structure; 58 is the compartment;
60 is diffusing structure; 62 is energy conversion layer; 64 is energy conversion layer;
642 is diffusing structure; 96 for sharing substrate.
Embodiment
Embodiment one.As shown in Figure 1, AC illuminator 10 of the present invention includes a substrate 12, one first light-emitting diode 14 and one second light-emitting diode 16.Described substrate 12 has plural groove 122, described plural groove 122 can comprise plural photon crystal structure, described plural groove 122 has same intervals distance or different interval distance, and the propagation path of light in the light-emitting diode is changed, to improve luminous efficiency.Described first light-emitting diode 14 is arranged on the plural groove 122 with described second light-emitting diode 16, and is electrically connected by a conductor 18 between described first light-emitting diode 14 and described second light-emitting diode 16.Described first light-emitting diode 14 is established for being separated by with described second light-emitting diode 16, thus have a compartment 124 between first light-emitting diode 14 and second light-emitting diode 16, so conductor 18 is a lead.Wherein, first electrode 150 of described first light-emitting diode 14 connects second electrode 172 of described second light-emitting diode 16 through conductor 18, makes described first light-emitting diode 14 and described second light-emitting diode 16 can be luminous according to described alternating current.
Moreover described first light-emitting diode 14 comprises brilliant accumulation horizon 142,162, a n type semiconductor layer 144,164 and a luminescent layer 146,166 and a P type semiconductor 148,168 of heap of stone with described second light-emitting diode 16.Brilliant accumulation horizon 142,162 of heap of stone is arranged on the described plural groove 122, described first light-emitting diode 14 and described second light-emitting diode 16 from down and on be brilliant accumulation horizon 142,162 of heap of stone, n type semiconductor layer 144,164, luminescent layer 146,166 and P type semiconductor 148,168 in regular turn, and one first electrode 150,170 is set on the n type semiconductor layer 144,164, one second electrode 152,172 is set on the p type semiconductor layer 148,168.Wherein, part brilliant accumulation horizon 142,162 of heap of stone can be positioned at described plural groove 122, and the doping content of described brilliant accumulation horizon 142,162 of heap of stone is lower than the doping content of described n type semiconductor layer 144,164.
The light that the present invention avoids luminescent layer 146,166 to expose to substrate 12 by the plural groove 122 of substrate 12 is directly absorbed by substrate 12, and can allow light after substrate 12 reflections, propagate toward described first light-emitting diode 14 and the side of described second light-emitting diode 16, take out efficient with the light that improves described first light-emitting diode 14 and described second light-emitting diode 16.
Embodiment two.As shown in Figure 2, this embodiment and embodiment difference shown in Figure 1 are, present embodiment further comprises an insulating barrier 20, be located on the described substrate 12, and be arranged in the compartment 124 between described first light-emitting diode 14 and described second light-emitting diode 16, with between described first light-emitting diode 14 of further insulation and described second light-emitting diode 16 electrically, and avoid being short-circuited or the electric leakage situation between described first light-emitting diode 14 and described second light-emitting diode 16.Therefore conductor 18 is arranged on the insulating barrier 20, and this moment, conductor 18 was a conductive layer.
Embodiment three.As shown in Figure 3, this embodiment and embodiment difference shown in Figure 2 are, present embodiment is provided with a diffusing structure 154,174 on described first light-emitting diode 14 and described second light-emitting diode 16, and diffusing structure 154,174 is positioned on the p type semiconductor layer 148,168, with the contact area of raising light scattering effect and electrode, and then improve luminous efficacy.Embodiment four.Shown in Fig. 4 A, the embodiment difference of this embodiment of the present invention and Fig. 2 is on the p type semiconductor layer 148,168 of first light-emitting diode 14 and second light-emitting diode 16 energy conversion layer 22 to be set, and energy conversion layer 22 covers first light-emitting diode 14 and second light-emitting diodes 16.Improve the illumination of AC illuminator 10 by energy conversion layer 22.In addition, shown in Fig. 4 B, more diffusing structure 222 can be set on the energy conversion layer 22,, and then improve luminous efficacy with the light scattering effect of raising crystal covering type AC illuminator 10.
Referring to Fig. 5 A to Fig. 5 D, it is the circuit diagram of the embodiment of AC illuminator 10 of the present invention.Shown in Fig. 5 A, this embodiment of the present invention is that AC illuminator 10 comprises a bridge rectifier 30, and it couples described first light-emitting diode 14 and described second light-emitting diode 16.Described bridge rectifier 30 comprises plural semiconductor epitaxial layer 40 (shown in Fig. 6 A to Fig. 6 C or shown in Fig. 7 A to Fig. 7 C).Shown in Fig. 5 B, described AC illuminator 10 comprises more than one parallel circuits at least, the bridge rectifier 30 shown in described parallel circuits that is Fig. 5 A in parallel with and described first light-emitting diode 14 and described second light-emitting diode 16 that are coupled.Shown in Fig. 5 C, described AC illuminator 10 comprises more than one series circuit at least, the bridge rectifier 30 shown in described series circuit that is the series connection Fig. 5 A with and described first light-emitting diode 14 and described second light-emitting diode 16 that coupled.Shown in Fig. 5 D, described AC illuminator 10 comprises more than one series-parallel circuit at least, the bridge rectifier 30 shown in described series-parallel circuit that is the connection in series-parallel Fig. 5 A with and described first light-emitting diode 14 and described second light-emitting diode 16 that are coupled.
Fig. 6 A to Fig. 6 C is the structural representation of an embodiment of semiconductor epitaxial layer of the present invention.As shown in Figure 6A, if described plural semiconductor epitaxial layer 40 is plural number the 3rd light-emitting diode, then from bottom to top comprise brilliant accumulation horizon 42, a n type semiconductor layer 44 and a luminescent layer 46 and a P type semiconductor 48 of heap of stone respectively; One first electrode 442 wherein is set on the n type semiconductor layer 44, one second electrode 482 is set on the p type semiconductor layer 48.Shown in Fig. 6 B,, then from bottom to top comprise brilliant accumulation horizon 42, a n type semiconductor layer 44 and a P type semiconductor 48 of heap of stone respectively if described plural semiconductor epitaxial layer 40 is plural diode; One first electrode 442 wherein is set on the n type semiconductor layer 44, one second electrode 482 is set on the p type semiconductor layer 48.Shown in Fig. 6 C,, then from bottom to top comprise a brilliant accumulation horizon 42 of heap of stone and a n type semiconductor layer 44 respectively if described plural semiconductor epitaxial layer 40 is plural diode; On the brilliant accumulation horizon 42 wherein of heap of stone one second electrode 422 is set, one first electrode 442 is set on the n type semiconductor layer 44.In addition, the present invention more can be provided with an energy conversion layer 62 on p type semiconductor layer 48, shown in Fig. 6 D.
Fig. 7 A to Fig. 7 C is the structural representation of another embodiment of semiconductor epitaxial layer of the present invention.Shown in Fig. 7 A, the embodiment difference of this embodiment of the present invention and Fig. 6 A is, on described plural the 3rd light-emitting diode diffusing structure 60 is set, and diffusing structure 60 is positioned on p type semiconductor layer 48 or the n type semiconductor layer 44, with the contact area of raising light scattering effect and electrode, and then improve luminous efficacy.Shown in Fig. 7 B, the embodiment difference of this embodiment of the present invention and Fig. 6 B is, a diffusing structure 60 is set on the described plural diode, and diffusing structure 60 is positioned on p type semiconductor layer 48 or the n type semiconductor layer 44.Shown in Fig. 7 C, the embodiment difference of this embodiment of the present invention and Fig. 6 C is, a diffusing structure 60 is set on the described plural diode, and diffusing structure 60 is positioned on n type semiconductor layer 44 or the brilliant accumulation horizon 42 of heap of stone.In addition, the present invention more can be provided with an energy conversion layer 62 on p type semiconductor layer 48, shown in Fig. 7 D.
Referring to Fig. 8 A to Fig. 8 C, it is the manufacturing flow chart of a preferred embodiment of the present invention; As shown in the figure, and simultaneously referring to Fig. 1.The manufacture method step of AC illuminator of the present invention comprises provides a substrate 12, and etching plural number groove 122; Form one first light-emitting diode 14 and one second light-emitting diode 16 respectively on described plural groove 122; One conductor 18 is set between first light-emitting diode 14 and second light-emitting diode 16, and allows conductor 18 couple first light-emitting diode 14 and second light-emitting diode 16.
Referring to Fig. 9 A to Fig. 9 D, it is the manufacturing flow chart of another preferred embodiment of the present invention; As shown in the figure, and simultaneously referring to Fig. 2.The embodiment difference of this embodiment of the present invention and Fig. 7 A to Fig. 7 C is, one conductor 18 is set between first light-emitting diode 14 and second light-emitting diode 16, and before allowing described conductor 18 couple the step of first light-emitting diode 14 and second light-emitting diode 16, further comprise a step, it is to form an insulating barrier 20 between first light-emitting diode 14 and second light-emitting diode 16, and in the compartment 124 of insulating barrier 20 between first light-emitting diode 14 and second light-emitting diode 16.
Embodiment five.As shown in figure 10, having increases the crystal covering type AC illuminator 50 that light takes out efficient, includes and accepts substrate 52, one first light-emitting diode 54 and one second light-emitting diode 56.The described substrate 52 of accepting has plural groove 522 and one first conductive layer 130, one second conductive layer 132 and one the 3rd conductive layer 134.Described plural groove 522 more can comprise plural photon crystal structure, and described plural groove 522 also further has same intervals distance or different interval distance, the propagation path of light in the light-emitting diode is changed, to improve luminous efficiency; And first conductive layer 130, second conductive layer 132 and the 3rd conductive layer 134 are provided with for separating.Described first light-emitting diode 54 is arranged on the plural groove 522 with described second light-emitting diode 56; Described first light-emitting diode 54 comprises one first electrode 550, third electrode 570 and one second electrode 552, the 4th electrode 572 with described second light-emitting diode 56.Second electrode 552 of described first light-emitting diode 54 connects described first conductive layer 130 by one first projection 510.First electrode 550 of described first light-emitting diode 54 and the 4th electrode 572 of described second light-emitting diode 56, connect described second conductive layer 132 by one second projection 512, and electrically connect described first light-emitting diode 54 and described second light-emitting diode 56 by described second projection 512.Described third electrode 570 connects described the 3rd conductive layer 134 by one the 3rd projection 514.Because described first light-emitting diode 54 is the setting of being separated by with described second light-emitting diode 56, so have a compartment 58 between first light-emitting diode 54 and described second light-emitting diode 56, with separate between described first light-emitting diode 54 and described second light-emitting diode 56 electrically, avoid being short-circuited or the electric leakage situation between described first light-emitting diode 54 and described second light-emitting diode 56.Wherein, described first light-emitting diode 54 is electrically connected and couples an AC power (not shown) with described second light-emitting diode 56 through first conductive layer 130, one second conductive layer 132 and one the 3rd conductive layer 134, and it is luminous to make described first light-emitting diode 54 and described second light-emitting diode 56 can comply with described alternating current.
Moreover described first light-emitting diode 54 comprises brilliant accumulation horizon 542,562, a n type semiconductor layer 544,564 and a luminescent layer 546,566 and a P type semiconductor 548,568 of heap of stone with described second light-emitting diode 56.Described first light-emitting diode 54 is brilliant accumulation horizon 542,562 of heap of stone, n type semiconductor layer 544,564, luminescent layer 546,566 and P type semiconductor 548,568 from top to down in regular turn with described second light-emitting diode 56; And first electrode 550,570 connects n type semiconductor layer 544,564, the second electrodes 552,572 and connects P type semiconductor 548,568; And the doping content of described brilliant accumulation horizon 542,562 of heap of stone is lower than the doping content of described n type semiconductor layer 544,564.
The light that the present invention avoids luminescent layer 546,566 to expose to accepting substrate 52 by the plural groove 522 of accepting substrate 52 is directly accepted substrate 52 and is absorbed, and can allow light after accepting substrate 52 reflections, propagate toward described first light-emitting diode 54 and the side of described second light-emitting diode 56, take out efficient with the light that improves described first light-emitting diode 54 and described second light-emitting diode 56.
Embodiment six.As shown in figure 11, the embodiment difference of this embodiment of the present invention and Figure 10 is, further comprise an insulating barrier 20, it is arranged in the compartment 58 between described first light-emitting diode 54 and described second light-emitting diode 56, with between described first light-emitting diode 54 of further insulation and described second light-emitting diode 56 electrically, and avoid being short-circuited or the electric leakage situation between described first light-emitting diode 54 and described second light-emitting diode 56.
Embodiment seven.As shown in figure 12, the embodiment difference of this embodiment of the present invention and Figure 11 is, further comprise a diffusing structure 540,560, it is positioned on the P type semiconductor 568 of the P type semiconductor 548 of described first light-emitting diode 54 and second light-emitting diode 56, takes out efficient with the light that improves described first light-emitting diode 54 and described second light-emitting diode 56.
Embodiment eight.As shown in figure 13, this embodiment of the present invention and 12 embodiment difference are, on described first light-emitting diode 54 and described second light-emitting diode 56 transparency carrier 554,574 is set, and transparency carrier 554,574 is positioned on the brilliant accumulation horizon 542,562 of heap of stone.Wherein transparency carrier 554,574 is provided with a diffusing structure 556,576, with the light scattering effect of raising crystal covering type AC illuminator 50, and then improves luminous efficacy.
Embodiment nine.As shown in figure 14, the embodiment difference of this embodiment of the present invention and Figure 13 is, accept a dielectric layer 524 is set on the substrate 52, with between described first light-emitting diode 54 of further insulation and described second light-emitting diode 56 electrically, and avoid being short-circuited or the electric leakage situation between described first light-emitting diode 54 and described second light-emitting diode 56.
Embodiment ten.As shown in figure 15, the embodiment difference of this embodiment of the present invention and Figure 14 is to accept a reflector 526 is set on the substrate 52, and accepts between substrate 52 and first light-emitting diode 54 and described second light-emitting diode 56 described; Directly being accepted substrate 52 with the light of avoiding luminescent layer 546,566 to expose to accepting substrate 52 absorbs, and can allow light after accepting substrate 52 reflections, propagate toward described first light-emitting diode 54 and the front and the side of described second light-emitting diode 56, take out efficient with the light that improves described first light-emitting diode 54 and described second light-emitting diode 56.
Embodiment 11.Shown in Figure 16 A, the embodiment difference of this embodiment of the present invention and Figure 15 is, on the transparency carrier 554,574 of first light-emitting diode 54 and second light-emitting diode 56 energy conversion layer 64 is set, and energy conversion layer 64 covers first light-emitting diode 54 and second light-emitting diode 56, improves the illumination of crystal covering type AC illuminator 50 by energy conversion layer 64.In addition, shown in Figure 16 B, on the energy conversion layer 64 diffusing structure 642 can be set,, and then improve luminous efficacy with the light scattering effect of raising crystal covering type AC illuminator 50.In addition, shown in Figure 17 A, crystal covering type AC illuminator 50 more comprises a bridge rectifier 30, and it couples described first light-emitting diode 54 and described second light-emitting diode 56, and described bridge rectifier 30 comprises plural semiconductor epitaxial layer 40.Shown in Figure 17 B, described crystal covering type AC illuminator 50 comprises more than one parallel circuits at least, the bridge rectifier 30 shown in described parallel circuits that is Figure 17 A in parallel with and described first light-emitting diode 54 and described second light-emitting diode 56 that are coupled.Shown in Figure 17 C, described crystal covering type AC illuminator 50 comprises more than one series circuit at least, the bridge rectifier 30 shown in described series circuit that is the series connection Figure 17 A with and described first light-emitting diode 54 and described second light-emitting diode 56 that coupled.Shown in Figure 17 D, described crystal covering type AC illuminator 50 comprises more than one series-parallel circuit at least, the bridge rectifier 30 shown in described series-parallel circuit that is the connection in series-parallel Figure 17 A with and described first light-emitting diode 54 and described second light-emitting diode 56 that are coupled.
Referring to Figure 18 A, when described plural semiconductor epitaxial layer 40 is plural number the 3rd light-emitting diode, each described semiconductor epitaxial layer 40 is arranged on the plural groove 522 of accepting substrate 52, and each described semiconductor epitaxial layer 40 from bottom to top comprises brilliant accumulation horizon 42, a n type semiconductor layer 44 and a luminescent layer 46 and a P type semiconductor 48 of heap of stone respectively.One first electrode 442 wherein is set on the n type semiconductor layer 44, one second electrode 482 is set on the p type semiconductor layer 48.Shown in Figure 18 B, when described plural semiconductor epitaxial layer 40 is plural diode, each described semiconductor epitaxial layer 40 is arranged on the plural groove 522 of accepting substrate 52, and each described semiconductor epitaxial layer 40 from bottom to top comprises brilliant accumulation horizon 42, a n type semiconductor layer 44 and a P type semiconductor 48 of heap of stone respectively.One first electrode 442 wherein is set on the n type semiconductor layer 44, one second electrode 482 is set on the p type semiconductor layer 48.Shown in Figure 18 C, when described plural semiconductor epitaxial layer 40 is plural diode, each described semiconductor epitaxial layer 40 is arranged on the plural groove 522 of accepting substrate 52, and each described semiconductor epitaxial layer 40 from bottom to top comprises a brilliant accumulation horizon 42 of heap of stone and a n type semiconductor layer 44 respectively.On the brilliant accumulation horizon 42 wherein of heap of stone one second electrode 422 is set, one first electrode 442 is set on the n type semiconductor layer 44.In addition, the present invention more can be provided with an energy conversion layer 62 on described semiconductor epitaxial layer 40, shown in Figure 18 D.
Shown in Figure 19 A, the embodiment difference of this embodiment of the present invention and Figure 18 A is, one diffusing structure 60 is set on p type semiconductor layer 48 or n type semiconductor layer 44,, and then improves luminous efficacy with the contact area of raising light scattering effect and electrode.Shown in Figure 19 B, the embodiment difference of this embodiment of the present invention and Figure 18 B is, a diffusing structure 60 is set on p type semiconductor layer 48 or n type semiconductor layer 44.Shown in Figure 19 C, the embodiment difference of this embodiment of the present invention and Figure 18 C is, a diffusing structure 60 is set on n type semiconductor layer 44 or brilliant accumulation horizon 42 of heap of stone.In addition, the present invention more can be provided with an energy conversion layer 62 on described semiconductor epitaxial layer 40, shown in Figure 19 D.
Referring to Figure 20 A to 20E, it is the manufacturing flow chart of a preferred embodiment more of the present invention, and please be simultaneously referring to Figure 10.The manufacture method of crystal covering type AC illuminator of the present invention, comprising provides one to accept substrate 52, and etching plural number groove 522; Form one first conductive layer 130, one second conductive layer 132 and one the 3rd conductive layer 134 in accepting on the substrate 52; Provide one to share substrate 96, and corresponding described plural groove 522 brilliant one first light-emitting diodes 54 and one second light-emitting diode 56 of forming of heap of stone is on described shared substrate 96; The described shared substrate 96 that overturns makes described first light-emitting diode 54 be electrically connected with described first conductive layer 130 with one first projection 510, make described first light-emitting diode 54 and described second light-emitting diode 56 second conductive layer 132 that joins with one second projection 512, described second light-emitting diode 56 is joined with described the 3rd conductive layer 134 with one the 3rd projection 514; And from described first light-emitting diode 54 and described second light-emitting diode 56 of described shared substrate 96 separation.
Referring to Figure 21 A to 21E, it also is the manufacturing flow chart of another preferred embodiment of the present invention again; And please consult Figure 11 simultaneously.The embodiment difference of present embodiment and Figure 20 A to Figure 20 E is, corresponding described plural groove 522 brilliant formation in one first light-emitting diode 54 and the same step of one second light-emitting diode 56 on described shared substrate 96 of heap of stone, further comprise formation one insulating barrier 20 between first light-emitting diode 54 and second light-emitting diode 56, and in the compartment 58 of insulating barrier 20 between first light-emitting diode 54 and second light-emitting diode 56.
More than, the present invention is had been described in detail, but these are not to be construed as limiting the invention by embodiment.Under the situation that does not break away from the principle of the invention, those skilled in the art also can make many distortion and improvement, and these also should be considered as protection scope of the present invention.
Claims (60)
1. one kind has the AC illuminator that increases light taking-up efficient, it is characterized in that, comprising:
One substrate, it has plural groove;
One first light-emitting diode is arranged on the described plural groove;
One second light-emitting diode is arranged on the described plural groove; And
One conductor, it couples described first light-emitting diode and described second light-emitting diode, have a compartment between described first light-emitting diode and described second light-emitting diode, described first light-emitting diode and described second light-emitting diode can be luminous according to an alternating current.
2. AC illuminator as claimed in claim 1 is characterized in that: also comprises,
One insulating barrier is arranged between described first light-emitting diode and described second light-emitting diode, and is positioned at the described compartment.
3. AC illuminator as claimed in claim 1 is characterized in that: described first light-emitting diode comprises:
One epitaxial layer stack layer is arranged on the described plural groove;
One n type semiconductor layer is arranged on the described epitaxial layer stack layer;
One luminescent layer is arranged on the described n type semiconductor layer;
One p type semiconductor layer is arranged on the described luminescent layer;
One first electrode is arranged on the described n type semiconductor layer, and described first electrode couples described conductor; And
One second electrode is arranged on the described p type semiconductor layer.
4. AC illuminator as claimed in claim 3 is characterized in that: described first light-emitting diode comprises a diffusing structure, is arranged on the described p type semiconductor layer.
5. AC illuminator as claimed in claim 1 is characterized in that: described second light-emitting diode comprises:
One epitaxial layer stack layer is arranged on the described plural groove;
One n type semiconductor layer is arranged on the described epitaxial layer stack layer;
One luminescent layer is arranged on the described n type semiconductor layer;
One p type semiconductor layer is arranged on the described luminescent layer;
One first electrode is arranged on the described n type semiconductor layer; And
One second electrode is arranged on the described p type semiconductor layer, and described second electrode couples described conductor.
6. AC illuminator as claimed in claim 5 is characterized in that: described second light-emitting diode comprises a diffusing structure, is arranged on the described p type semiconductor layer.
7. AC illuminator as claimed in claim 1 is characterized in that: also comprises,
One bridge rectifier, it couples described first light-emitting diode and described second light-emitting diode.
8. AC illuminator as claimed in claim 7 is characterized in that: described bridge rectifier comprises plural semiconductor epitaxial layer.
9. AC illuminator as claimed in claim 8 is characterized in that: described plural semiconductor epitaxial layer is plural number the 3rd light-emitting diode, and it comprises respectively:
One epitaxial layer stack layer is arranged on the described plural groove;
One n type semiconductor layer is arranged on the described epitaxial layer stack layer;
One luminescent layer is arranged on the described n type semiconductor layer;
One p type semiconductor layer is arranged on the described luminescent layer;
One first electrode is arranged on the described n type semiconductor layer; And
One second electrode is arranged on the described p type semiconductor layer.
10. AC illuminator as claimed in claim 9 is characterized in that: described the 3rd light-emitting diode comprises a diffusing structure, is arranged on the described p type semiconductor layer.
11. AC illuminator as claimed in claim 8 is characterized in that: described plural semiconductor epitaxial layer is plural diode, and it comprises respectively:
One epitaxial layer stack layer is arranged on the described plural groove;
One n type semiconductor layer is arranged on the described epitaxial layer stack layer;
One p type semiconductor layer is arranged on the described n type semiconductor layer;
One first electrode is arranged on the described n type semiconductor layer; And
One second electrode is arranged on the described p type semiconductor layer.
12. AC illuminator as claimed in claim 11 is characterized in that: described plural diode comprises a diffusing structure, is arranged on the described p type semiconductor layer.
13. AC illuminator as claimed in claim 8 is characterized in that: described plural semiconductor epitaxial layer is plural diode, and it comprises respectively:
One epitaxial layer stack layer is arranged on the described plural groove;
One n type semiconductor layer is arranged on the described epitaxial layer stack layer;
One first electrode is arranged on the described epitaxial layer stack layer; And
One second electrode is arranged on the described n type semiconductor layer.
14. AC illuminator as claimed in claim 13 is characterized in that: described plural diode comprises a diffusing structure, is arranged on the described n type semiconductor layer.
15. as claim 3,5,9,11 or 13 described AC illuminators, it is characterized in that: the doping content of described epitaxial layer stack layer is low than the doping content of n type semiconductor layer.
16. as claim 3,5,9 or 11 described AC illuminators, it is characterized in that: also comprise an energy conversion layer, be arranged on the described p type semiconductor layer.
17. AC illuminator as claimed in claim 16 is characterized in that: also comprise a diffusing structure, be arranged on the described energy conversion layer.
18. AC illuminator as claimed in claim 1 is characterized in that: described plural groove comprises plural photon crystal structure.
19. AC illuminator as claimed in claim 1 is characterized in that: described plural groove tool same intervals distance.
20. AC illuminator as claimed in claim 1 is characterized in that: described plural groove tool different interval distance.
21. AC illuminator as claimed in claim 1 is characterized in that: described AC illuminator comprises more than one parallel circuits at least.
22. AC illuminator as claimed in claim 1 is characterized in that: described AC illuminator comprises more than one series circuit at least.
23. AC illuminator as claimed in claim 1 is characterized in that: described AC illuminator comprises more than one series-parallel circuit at least.
24. the manufacture method of an AC illuminator is characterized in that: comprise following steps:
Provide a substrate and etching plural number groove on described substrate;
Form one first light-emitting diode and one second light-emitting diode respectively on described plural groove, have a compartment between described first light-emitting diode and described second light-emitting diode; And
One conductor is set on the described compartment and connect described first light-emitting diode and described second light-emitting diode.
25. manufacture method as claimed in claim 24, it is characterized in that: a conductor is set on the described compartment and before connecting the step of described first light-emitting diode and described second light-emitting diode, comprise, form an insulating barrier between described first light-emitting diode and described second light-emitting diode, and described insulating barrier is arranged in the described compartment.
26. one kind has and increases the AC illuminator that light takes out efficient, it is characterized in that: comprise,
One accepts substrate, has plural groove, one first conductive layer, one second conductive layer and one the 3rd conductive layer;
One first light-emitting diode, be arranged on the described plural groove, described first light-emitting diode comprises one first electrode and one second electrode, and described second electrode connects described first conductive layer by one first projection, and described first electrode connects described second conductive layer by one second projection; And
One second light-emitting diode, be arranged on the described plural groove, described second light-emitting diode comprises a third electrode and one the 4th electrode, described third electrode connects described the 3rd conductive layer by one the 3rd projection, described the 4th electrode connects described second conductive layer by one second projection, have a compartment between described first light-emitting diode and described second light-emitting diode, described first light-emitting diode and described second light-emitting diode are luminous according to an alternating current by described first conductive layer, described second conductive layer and described the 3rd conductive layer.
27. AC illuminator as claimed in claim 26 is characterized in that: also comprise, an insulating barrier is arranged between described first light-emitting diode and described second light-emitting diode, and is positioned at the described compartment.
28. AC illuminator as claimed in claim 26 is characterized in that: described first light-emitting diode comprises:
One p type semiconductor layer is arranged at described accepting on the substrate, and connects described second electrode;
One luminescent layer is arranged on the described n type semiconductor layer;
One n type semiconductor layer is arranged on the described luminescent layer, and connects described first electrode; And
One epitaxial layer stack layer is arranged on the described n type semiconductor layer.
29. AC illuminator as claimed in claim 28 is characterized in that: described first light-emitting diode comprises a diffusing structure, is arranged on the described p type semiconductor layer.
30. AC illuminator as claimed in claim 28 is characterized in that: described first light-emitting diode comprises a transparency carrier, is arranged on the described epitaxial layer stack layer.
31. AC illuminator as claimed in claim 30 is characterized in that: described first light-emitting diode comprises a diffusing structure, is arranged on the described transparency carrier.
32. AC illuminator as claimed in claim 26 is characterized in that: described second light-emitting diode comprises,
One p type semiconductor layer is arranged at described accepting on the substrate, and connects described the 4th electrode;
One luminescent layer is arranged on the described n type semiconductor layer;
One n type semiconductor layer is arranged on the described luminescent layer, and connects described third electrode; And
One epitaxial layer stack layer is arranged on the described n type semiconductor layer.
33. AC illuminator as claimed in claim 32 is characterized in that: described second light-emitting diode comprises a diffusing structure, is arranged on the described p type semiconductor layer.
34. AC illuminator as claimed in claim 32 is characterized in that: described second light-emitting diode comprises a transparency carrier, is arranged on the described epitaxial layer stack layer.
35. AC illuminator as claimed in claim 34 is characterized in that: described second light-emitting diode comprises a diffusing structure, is arranged on the described transparency carrier.
36. as claim 30 or 34 described AC illuminators, it is characterized in that: also comprise an energy conversion layer and be arranged on the described transparency carrier.
37. AC illuminator as claimed in claim 26 is characterized in that: also comprise a bridge rectifier, it couples described first light-emitting diode and described second light-emitting diode.
38. AC illuminator as claimed in claim 37 is characterized in that: described bridge rectifier comprises plural semiconductor epitaxial layer.
39. AC illuminator as claimed in claim 38 is characterized in that: described plural semiconductor epitaxial layer is plural number the 3rd light-emitting diode, and it comprises respectively:
One epitaxial layer stack layer is arranged on the described plural groove;
One n type semiconductor layer is arranged on the described epitaxial layer stack layer;
One luminescent layer is arranged on the described n type semiconductor layer;
One p type semiconductor layer is arranged on the described luminescent layer;
One first electrode is arranged on the described n type semiconductor layer; And
One second electrode is arranged on the described p type semiconductor layer.
40. AC illuminator as claimed in claim 39 is characterized in that: described the 3rd light-emitting diode comprises a diffusing structure, is arranged on the described p type semiconductor layer.
41. AC illuminator as claimed in claim 38 is characterized in that: described plural semiconductor epitaxial layer is plural diode, and it comprises respectively:
One epitaxial layer stack layer is arranged on the described plural groove;
One n type semiconductor layer is arranged on the described epitaxial layer stack layer;
One p type semiconductor layer is arranged on the described n type semiconductor layer;
One first electrode is arranged on the described n type semiconductor layer; And
One second electrode is arranged on the described p type semiconductor layer.
42. AC illuminator as claimed in claim 41 is characterized in that: described plural diode comprises a diffusing structure, is arranged on the described p type semiconductor layer.
43. AC illuminator as claimed in claim 38 is characterized in that: described plural semiconductor epitaxial layer is plural diode, and it comprises respectively:
One epitaxial layer stack layer is arranged on the described plural groove;
One n type semiconductor layer is arranged on the described epitaxial layer stack layer;
One first electrode is arranged on the described epitaxial layer stack layer; And
One second electrode is arranged on the described n type semiconductor layer.
44. AC illuminator as claimed in claim 43 is characterized in that: described plural diode comprises a diffusing structure, is arranged on the described n type semiconductor layer.
45. as claim 28,32,39,41 or 43 described AC illuminators, it is characterized in that: the doping content of the more described n type semiconductor layer of doping content of described epitaxial layer stack layer is low.
46. as claim 39 or 41 described AC illuminators, it is characterized in that: also comprise an energy conversion layer, be arranged on the described p type semiconductor layer.
47. AC illuminator as claimed in claim 26 is characterized in that: described plural groove can comprise plural photon crystal structure.
48. AC illuminator as claimed in claim 26 is characterized in that: described plural groove has the same intervals distance.
49. AC illuminator as claimed in claim 26 is characterized in that: described plural groove has the different interval distance.
50. AC illuminator as claimed in claim 26 is characterized in that: described AC illuminator comprises more than one parallel circuits at least.
51. AC illuminator as claimed in claim 26 is characterized in that: described AC illuminator comprises an above series circuit at least.
52. AC illuminator as claimed in claim 26 is characterized in that: described AC illuminator comprises an above series-parallel circuit at least.
53. AC illuminator as claimed in claim 26 is characterized in that: also comprise a dielectric layer, be arranged on the described plural groove.
54. AC illuminator as claimed in claim 53 is characterized in that: described dielectric layer comprises the plural number combination of more than one materials and thickness at least.
55. AC illuminator as claimed in claim 26 is characterized in that: also comprise a reflector, be located at described accepting between substrate and described first light-emitting diode and described second light-emitting diode.
56. AC illuminator as claimed in claim 53 is characterized in that: also comprise a reflector, be located at described accepting between substrate and the dielectric layer.
57. the manufacture method of an AC illuminator is characterized in that: comprise following steps,
Provide one to accept substrate and etching plural number groove and accept on the substrate in described, and described accept have one first conductive layer on the substrate, one second conductive layer and one the 3rd conductive layer;
Provide one to share substrate, corresponding described plural groove forms one first light-emitting diode and one second light-emitting diode respectively on described shared substrate, tool one compartment between described first light-emitting diode and described second light-emitting diode; And
Described shared substrate overturns, make described first light-emitting diode connect described first conductive layer with one first projection, make described first light-emitting diode be connected described second conductive layer with one second projection, make described second light-emitting diode connect described the 3rd conductive layer with one the 3rd projection with described second light-emitting diode; And
Separate described shared substrate from described first light-emitting diode with described second light-emitting diode.
58. manufacture method as claimed in claim 57 is characterized in that: corresponding described plural groove forms respectively in one first light-emitting diode and the step of one second light-emitting diode on described shared substrate, comprises following steps:
Form an insulating barrier between described first light-emitting diode and described second light-emitting diode, and described insulating barrier is arranged in the described compartment.
59. manufacture method as claimed in claim 57, it is characterized in that: corresponding described plural groove forms respectively in one first light-emitting diode and the step of one second light-emitting diode on described shared substrate, comprises following steps: form a dielectric layer and accept on the substrate in described.
60. manufacture method as claimed in claim 57, it is characterized in that: corresponding described plural groove form respectively one first light-emitting diode and one second light-emitting diode on described shared substrate step in, comprise following steps: form a reflector and be located at described accepting between substrate and the described dielectric layer.
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