CN101840989A - Thermoelectric conversion device - Google Patents
Thermoelectric conversion device Download PDFInfo
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- CN101840989A CN101840989A CN200910128221.6A CN200910128221A CN101840989A CN 101840989 A CN101840989 A CN 101840989A CN 200910128221 A CN200910128221 A CN 200910128221A CN 101840989 A CN101840989 A CN 101840989A
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 168
- 239000004020 conductor Substances 0.000 claims abstract description 133
- 239000000758 substrate Substances 0.000 claims abstract description 54
- 239000010410 layer Substances 0.000 claims description 197
- 239000000463 material Substances 0.000 claims description 31
- 230000005619 thermoelectricity Effects 0.000 claims description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000000919 ceramic Substances 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 229910002665 PbTe Inorganic materials 0.000 claims description 4
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 4
- 239000011229 interlayer Substances 0.000 claims description 4
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 claims description 4
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical group [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 7
- 238000010248 power generation Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000005611 electricity Effects 0.000 description 4
- 238000011084 recovery Methods 0.000 description 3
- 239000002918 waste heat Substances 0.000 description 3
- 230000005678 Seebeck effect Effects 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 238000012827 research and development Methods 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000295 fuel oil Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
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Abstract
The invention discloses a thermoelectric conversion device comprising a cold junction substrate, a hot junction substrate and a stacking structure, wherein the stacking structure is arranged between the cold junction substrate and the hot junction substrate and comprises a plurality of thermoelectric conversion layers, and each thermoelectric conversion layer comprises a thermoelectric relative layer, a first conducting material layer, a second conducting material layer, a first heat conduction non-conducting structure and a second heat conduction non-conducting structure; each thermoelectric conversion layer is respectively arranged in the stacking structure; the first conducting material layer comprises a plurality of first conducting materials, and the first conducting material is arranged above P-type and N-type thermoelectric conversion elements; the second conducting material layer comprises a plurality of second conducting materials, and the second conducting material is arranged below the P-type and N-type thermoelectric conversion elements; the first heat conduction non-conducting structure is respectively connected between two adjacent first conducting material layers, and the second heat conduction non-conducting structure is respectively connected between two adjacent second conducting material layers.
Description
Technical field
The present invention relates to a kind of thermoelectric conversion device, and particularly relate to a kind of thermoelectric conversion device with stacked structure.
Background technology
Because the energy shortage problem makes the important issue that develops into of renewable energy resources technology, is example with the automobile, engine heat accounts for 1/3rd of vehicle power, if can utilize exhaust waste heat that thermoelectric thermo-electric generation is provided, and just can reduce the consumption of fuel oil.In addition, a large amount of used heat discharge in factory and family, how Waste Heat Recovery are utilized again, also are very important problems.Yet present most used heat there is no suitable recovery technology, therefore causes energy waste.
Thermoelectric generation technology is one of focus technology of industry research and development in recent years, the operation principle of thermoelectric generation technology be N type semiconductor material and P type semiconductor material are coupled to thermoelectric right, utilize N type and P type semiconductor material two end in contact different temperatures, so just, can produce power shift, produce electric current thermoelectric centering, be called Seebeck effect (Seebeck effect).Thermoelectric conversion power generation mainly is to utilize the temperature difference at N type and P type semiconductor material two ends to make thermoelectricity to producing electric current, and therefore thermoelectric conversion power generation can not pollute environment, and the reaction rate of thermoelectric conversion power generation is fast.Thermoelectric conversion power generation more can be in conjunction with the technology of Waste Heat Recovery, and used heat is used as the thermal source of thermoelectric conversion power generation, reduces the waste of the energy.In addition, a plurality of thermoelectricity are to can electrically connecting and be stacked into thermoelectric conversion device, to meet different energy output demands.From another perspective, thermoelectric conversion device can be directly changed into electric energy with heat energy, does not need to see through the moving part (moving part) of similar engine pistons, therefore can improve the reliability of structure of thermoelectric conversion device.The manufacturing of thermoelectric conversion device can significantly be dwindled the volume of thermoelectric conversion device in conjunction with micro electronmechanical and semiconductor technology.
Yet thermoelectric conversion power generation maximum problem on using is that conversion efficiency of thermoelectric is limited.In order to improve the conversion efficiency of thermoelectric of thermoelectric conversion device, can be by the research and development of material technology, exploitation has the thermoelectric material of good thermoelectric property.In addition, because the packaging density of thermoelectric conversion device is limited at present, the energy output of thermoelectric conversion device thereby be restricted, so it is the present thermoelectric conversion device structure Design of improvement that another one improves the important technology direction of conversion efficiency of thermoelectric, and the packaging density of increase thermoelectric conversion device, to improve the electricity generation efficiency of thermoelectric conversion device.
Summary of the invention
The invention provides a kind of thermoelectric conversion device of tool stacked structure, its structure can be in order to improve the electricity generation efficiency of thermoelectric conversion device.
The present invention proposes a kind of thermoelectric conversion device, comprises cold junction substrate, hot junction substrate and stacked structure.Stacked structure is disposed between cold junction substrate and the hot junction substrate, and stacked structure comprises a plurality of thermoelectric conversion layer, each thermoelectric conversion layer is arranged in respectively in the stacked structure, and this thermoelectric conversion layer comprises thermoelectric to layer, first conductive material layer and second conductive material layer, first heat conduction non-conducting structure and second heat conduction non-conducting structure.This first conductive material layer comprises a plurality of first electric conducting materials, and this second conductive material layer comprises a plurality of second electric conducting materials.This thermoelectricity to layer comprise a plurality of thermoelectricity to and each thermoelectricity to comprising P type thermoelectric conversion element and N type thermoelectric conversion element, make first electric conducting material be electrically connected at the top of P type thermoelectric conversion element and N type thermoelectric conversion element respectively, and second electric conducting material is electrically connected at the below of N type thermoelectric conversion element and adjacent P type thermoelectric conversion element respectively, and thermoelectric in twos to just connecting with the series connection pattern.First heat conduction non-conducting structure is connected in two first adjacent electric conducting material interlayers and this hot junction substrate, and heat conduction to the first conductive material layer, and first conductive material layer of each layer is maintained under first operating temperature.Wherein this first operating temperature is the hot-end operation temperature.Second heat conduction non-conducting structure then is connected to two second adjacent electric conducting material interlayers and this cold junction substrate, and heat conduction to the second conductive material layer, second conductive material layer of each layer is maintained under second operating temperature, and first operating temperature is not equal to second operating temperature.Wherein this second operating temperature is the cold junction operating temperature.
In an embodiment of the present invention, the first above-mentioned heat conduction non-conducting structure comprises horizontal syndeton, and this horizontal syndeton comprises a plurality of first continuous horizontal bars, in order to connect first conductive material layer.In addition, first heat conduction non-conducting structure also comprises vertical syndeton, and this vertical syndeton comprises a plurality of first pillars, and these first pillars vertically are connected between these first horizontal bars.
In an embodiment of the present invention, the second above-mentioned heat conduction non-conducting structure comprises horizontal syndeton, and this horizontal syndeton comprises a plurality of second continuous horizontal bars, in order to connect second conductive material layer.In addition, second heat conduction non-conducting structure also comprises vertical syndeton, and this vertical syndeton comprises a plurality of second pillars, and these second pillars vertically are connected between these second horizontal bars.
In an embodiment of the present invention, above-mentioned these second horizontal bars is arranged in network structure, and second conductive material layer is disposed on the network structure.This network structure can be geometry.
In an embodiment of the present invention, P type thermoelectric conversion element of above-mentioned each layer and N type thermoelectric conversion element are staggered with the kenel of hexgonal structure.
In another embodiment of the present invention, P type thermoelectric conversion element of above-mentioned each layer and N type thermoelectric conversion element are staggered with the kenel of tetragonal structure
In an embodiment of the present invention, the material of above-mentioned cold junction substrate for example is silicon substrate, ceramic base material or other equivalent base materials.
In an embodiment of the present invention, the material of above-mentioned hot junction substrate for example is silicon substrate, ceramic base material or other equivalent base materials.
In an embodiment of the present invention, above-mentioned thermoelectric right material for example is Bi
2Te
3, PbTe, Sb
2Te
3, SiGe or other equivalent materials.
Based on above-mentioned, thermoelectric conversion device of the present invention can see through first heat conduction non-conducting structure and second heat conduction non-conducting structure is transmitted heat, make the high temperature side of each layer thermoelectric conversion layer can both maintain the identical temperature difference with the temperature difference of low temperature side, and the thermoelectricity that makes each layer to the temperature difference of layer also much at one, improving the energy output of each layer thermoelectric conversion layer, and then improve the electricity generation efficiency of thermoelectric conversion device.
State feature and advantage on the present invention and can become apparent for allowing, embodiment cited below particularly, and cooperate the figure of institute to be described in detail below.
Description of drawings
Fig. 1 is the structure chart of the thermoelectric conversion device of embodiments of the invention.
Fig. 2 is the end view of the thermoelectric conversion device of Fig. 1.
Fig. 3 is the structure chart of the thermoelectric conversion device of another embodiment of the present invention.
Fig. 4 is the end view of the thermoelectric conversion device of Fig. 3.
Fig. 5 is the simple and easy vertical view of the thermoelectric conversion device of Fig. 3.
Description of reference numerals
10: thermoelectric conversion device
12: the hot junction substrate
14: the cold junction substrate
100: stacked structure
100a, 100b, 100c: thermoelectric conversion layer
110a, 110b, 110c: thermoelectric to layer
114a:P type thermoelectric conversion element
112a:N type thermoelectric conversion element
120a, 120b, 120c: first conductive material layer
130a, 130b, 130c: second conductive material layer
140a, 140b, 140c: first heat conduction non-conducting structure
140x: horizontal syndeton
140y: vertical syndeton
150a, 150b, 150c: second heat conduction non-conducting structure
150x: horizontal syndeton
150y: vertical syndeton
A1: first electric conducting material
A2: second electric conducting material
Embodiment
Fig. 1 is the structure chart of the thermoelectric conversion element of embodiments of the invention, and Fig. 2 is the end view of the thermoelectric conversion element of Fig. 1.Please refer to Fig. 1 and Fig. 2, the thermoelectric conversion device 10 of present embodiment, this thermoelectric conversion device 10 comprises hot junction substrate 12, cold junction substrate 14 and stacked structure 100.Stacked structure 100 is disposed between hot junction substrate 12 and the cold junction substrate 14, and stacked structure 100 comprises a plurality of thermoelectric conversion layer 100a, 100b.Wherein, thermoelectric conversion layer 100a comprises thermoelectric to layer 110a, the first conductive material layer 120a and the second conductive material layer 130a, the first heat conduction non-conducting structure 140a and the second heat conduction non-conducting structure 150a.Thermoelectric conversion layer 100b comprises thermoelectric to layer 110b, the first conductive material layer 120b and the second conductive material layer 130b, the first heat conduction non-conducting structure 140b and the second heat conduction non-conducting structure 150b.Each thermoelectric conversion layer 100a, 100b are arranged in the stacked structure 100, and present embodiment only is described as follows with the thermoelectric conversion layer 100a of the superiors, and as thermoelectric conversion layer 100a, the Therefore, omited is not carried, and repeats no more as for the explanation of thermoelectric conversion layer 100b.
As shown in Figure 1, 2, each thermoelectricity of present embodiment is arranged among the thermoelectric conversion layer 100a layer 110a, this thermoelectricity to layer 110a comprise a plurality of thermoelectricity to and each thermoelectricity to comprising N type thermoelectric conversion element 112a and P type thermoelectric conversion element 114a.This thermoelectricity can comprise for example Bi to the material of layer 110a
2Te
3, PbTe, Sb
2Te
3Or the semi-conducting material or the thermoelectric material of nanostructure such as SiGe.The first conductive material layer 120a includes a plurality of first electric conducting material a1, and the first electric conducting material a1 is electrically connected at the top of the thermoelectricity of thermoelectric conversion layer 100a to N type thermoelectric conversion element 112a and the P type thermoelectric conversion element 114a of layer 110a respectively.The second conductive material layer 130a includes a plurality of second electric conducting material a2, and the thermoelectricity that the second electric conducting material a2 is electrically connected at thermoelectric conversion layer 100a respectively is to the below of the N type thermoelectric conversion element 112a of layer 110a and adjacent P type thermoelectric conversion element 114a.Thermoelectric in twos to just connecting with the series connection pattern.In above-mentioned cascaded structure, when each thermoelectricity when being in temperature difference state, move towards N type thermoelectric conversion element 112a via the second conductive material layer 130a downwards in the hole that has positive charge among the P type thermoelectric conversion element 114a, upwards move via N type thermoelectric conversion element 112a afterwards towards the first conductive material layer 120a, and arrive another P type thermoelectric conversion element 114a, the rest may be inferred, to produce electric current.
In addition, the first heat conduction non-conducting structure 140a can connect the first conductive material layer 120a of thermoelectric conversion layer 100a, main effect is the first conductive material layer 120a of heat conduction to thermoelectric conversion layer 100a, the first conductive material layer 120a almost can be maintained under first operating temperature (for example being the hot-end operation temperature), and then the temperature difference of the first conductive material layer 120b among first conductive material layer 120a among the thermoelectric conversion layer 100a and the adjacent thermoelectric conversion layer 100b is reduced to minimum.The second heat conduction non-conducting structure 150a is in order to connect the second conductive material layer 130a of thermoelectric conversion layer 100a, and heat conduction is to the second conductive material layer 130a of thermoelectric conversion layer 100a, the second conductive material layer 130a can be maintained under second operating temperature (for example being the cold junction operating temperature), and then thermoelectricity reduced to minimum to the temperature difference of the second conductive material layer 130b among second conductive material layer 130a among the conversion layer 100a and the adjacent thermoelectric conversion layer 100b, and first operating temperature be not equal to second operating temperature, to keep the temperature difference of hot junction and cold junction.The first heat conduction non-conducting structure 140a and second its material of heat conduction non-conducting structure 150a can be thermal conductivity and well and not have a material of conductivity, so heat can be passed to effectively the first conductive material layer 120a and the second conductive material layer 130a respectively, and can not influence each thermoelectric right generating effect.
Please continue with reference to figure 1, the second heat conduction non-conducting structure 150a of present embodiment comprises horizontal syndeton 150x, and horizontal syndeton 150x comprises a plurality of continuous horizontal bars.In addition, also have vertical syndeton 150y between the adjacent horizontal syndeton 150x, it comprises a plurality of pillars.These pillars vertically are connected between the horizontal bars, to maintain in the predetermined altitude.What deserves to be mentioned is that horizontal syndeton 150x is neither to be contacted with the first conductive material layer 120a, 120b, only contacts with the second conductive material layer 130a.Therefore, the temperature of horizontal syndeton 150x can not influence the temperature of the first conductive material layer 120a, 120b, makes the temperature difference of the first conductive material layer 120a, the second conductive material layer 130a of thermoelectric conversion layer 100a can maintain the identical temperature difference with the first conductive material layer 120b of thermoelectric conversion layer 100b, the temperature difference of the second conductive material layer 130b.
In addition, in the present embodiment, the first heat conduction non-conducting structure 140a comprises horizontal syndeton 140x and a plurality of vertical syndeton 140y that is connected between the horizontal syndeton 140x.Laterally syndeton 140x is in order to flatly to connect the first conductive material layer 120a, and vertically syndeton 140y then can vertically be arranged among the dimetric network structure respectively.Laterally syndeton 140x comprises a plurality of horizontal bars, and vertically syndeton 140y comprises a plurality of pillars.These pillars vertically are connected between the horizontal bars, to keep predetermined height.
Illustrate as Fig. 1, thermoelectric conversion device 10 has hot junction substrate 12 and cold junction substrate 14.Wherein, hot junction substrate 12 is connected in the first heat conduction non-conducting structure 140a, the 140b of three-dimensional, and 14 of cold junction substrates are connected in the second heat conduction non-conducting structure 150a, the 150b of three-dimensional.The temperature of hot junction substrate 12 is delivered to respectively on the first conductive material layer 120a, the 120b via the first heat conduction non-conducting structure 140a, 140b, to maintain first operating temperature (for example being the hot-end operation temperature), cold junction substrate 14 then is that temperature is passed to respectively on the second conductive material layer 130a, the 130b through the second heat conduction non-conducting structure 150a, 150b, to maintain second operating temperature (for example being the cold junction operating temperature).Hot junction substrate 12 for example is highly heat-conductive materials such as silicon substrate or ceramic base material with the material of cold junction substrate 14.
Fig. 3 is the structure chart of the thermoelectric conversion device of another embodiment of the present invention, and Fig. 4 is the end view of the thermoelectric conversion device of Fig. 3, and Fig. 5 is the simple and easy vertical view of the thermoelectric conversion device of Fig. 3.The thermoelectric conversion device 10 of present embodiment comprises hot junction substrate 12, cold junction substrate 14 and stacked structure 100.Stacked structure 100 is disposed between hot junction substrate 12 and the cold junction substrate 14, and stacked structure 100 comprises a plurality of thermoelectric conversion layer 100a, 100b, 100c.Wherein, thermoelectric conversion layer 100a comprises thermoelectric to layer 110a, the first conductive material layer 120a and the second conductive material layer 130a, the first heat conduction non-conducting structure 140a and the second heat conduction non-conducting structure 150a.Thermoelectric conversion layer 100b comprises thermoelectric to layer 110b, the first conductive material layer 120b and the second conductive material layer 130b, the first heat conduction non-conducting structure 140b and the second heat conduction non-conducting structure 150b.Thermoelectric conversion layer 100c comprises thermoelectric to layer 110c, the first conductive material layer 120c and the second conductive material layer 130c, the first heat conduction non-conducting structure 140c and the second heat conduction non-conducting structure 150c.Present embodiment will be done explanation to layer 110a, 110b, 110c, three layer of first conductive material layer 120a, 120b, 120c, three layer of second conductive material layer 130a, 130b, 130c, three layer of first heat conduction non-conducting structure 140a, 140b, 140c, three layer of second heat conduction non-conducting structure 150a, 150b, 150c at three layers of thermoelectric conversion layer 100a, 100b, 100c, three layers of thermoelectricity.Each thermoelectric conversion layer 100a, 100b and 100c are arranged in the stacked structure 100, present embodiment only is described as follows with the thermoelectric conversion layer 100a of the superiors, as thermoelectric conversion layer 100a, the Therefore, omited is not carried, and repeats no more as for the explanation of thermoelectric conversion layer 100b, 100c.
Thermoelectricity is arranged among the thermoelectric conversion layer 100a layer 110a, and thermoelectricity comprises that to layer 110a a plurality of thermoelectricity are right, and each thermoelectricity is to comprising P type thermoelectric conversion element 114a and N type thermoelectric conversion element 112a.Thermoelectric material to layer 110a can comprise for example Bi
2Te
3, PbTe, Sb
2Te
3Or the semi-conducting material or the thermoelectric material of nanostructure such as SiGe.The first conductive material layer 120a includes a plurality of first electric conducting material a1, and the first electric conducting material a1 is electrically connected at thermoelectric right P type thermoelectric conversion element 114a and the top of N type thermoelectric conversion element 112a respectively.The second conductive material layer 130a includes a plurality of second electric conducting material a2, the second electric conducting material a2 is electrically connected at thermoelectric right P type thermoelectric conversion element 114a and the below of N type thermoelectric conversion element 112a respectively, and connect P type thermoelectric conversion element for N type thermoelectric conversion element, P type thermoelectric conversion element connects another N type thermoelectric conversion element, and is thermoelectric in twos to the pattern connection of just can connecting.In above-mentioned cascaded structure, when each thermoelectricity when being in temperature difference state, move towards N type thermoelectric conversion element 112a via the second conductive material layer 130a downwards in the hole that has positive charge among the P type thermoelectric conversion element 114a, upwards move via N type thermoelectric conversion element 112a afterwards towards the first conductive material layer 120a, and arrive another P type thermoelectric conversion element 114a, the rest may be inferred, to produce electric current.
In addition, the first heat conduction non-conducting structure 140a can connect the first conductive material layer 120a of thermoelectric conversion layer 100a, main effect is the first conductive material layer 120a of heat conduction to thermoelectric conversion layer 100a, the first conductive material layer 120a almost can be maintained under first operating temperature (for example being the hot-end operation temperature), and then the temperature difference of the first conductive material layer 120b among first conductive material layer 120a among the thermoelectric conversion layer 100a and the adjacent thermoelectric conversion layer 100b is reduced to minimum.The second heat conduction non-conducting structure 150a is in order to connect the second conductive material layer 130a of thermoelectric conversion layer 100a, and heat conduction is to the second conductive material layer 130a of thermoelectric conversion layer 100a, the second conductive material layer 130a can be maintained under second operating temperature (for example being the cold junction operating temperature), and then thermoelectricity reduced to minimum to the temperature difference of the second conductive material layer 130b among second conductive material layer 130a among the conversion layer 100a and the adjacent thermoelectric conversion layer 100b, and first operating temperature be not equal to second operating temperature, to keep the temperature difference of hot junction and cold junction.The first heat conduction non-conducting structure 140a and second its material of heat conduction non-conducting structure 150a can be thermal conductivity and well and not have a material of conductivity, so heat can be passed to effectively the first conductive material layer 120a and the second conductive material layer 130a respectively, and can not influence each thermoelectric right generating effect.
Please continue with reference to figure 3, the second heat conduction non-conducting structure 150a of present embodiment comprises horizontal syndeton 150x, and horizontal syndeton 150x comprises a plurality of continuous horizontal bars.In addition, also have vertical syndeton 150y between the adjacent horizontal syndeton 150x, it comprises a plurality of pillars.These pillars vertically are connected between the horizontal bars, to maintain in the predetermined altitude.What deserves to be mentioned is that horizontal syndeton 150x is neither to be contacted with the first conductive material layer 120a, 120b, 120c, only contacts with the second conductive material layer 130a.Therefore, the temperature of horizontal syndeton 150x can not influence the temperature of the first conductive material layer 120a, 120b, 120c, makes the temperature difference of the first conductive material layer 120b, the second conductive material layer 130b of the temperature difference, thermoelectric conversion layer 100b of the first conductive material layer 120a, the second conductive material layer 130a of thermoelectric conversion layer 100a and the first conductive material layer 120c of thermoelectric conversion layer 100c, the temperature difference of the second conductive material layer 130c can maintain the identical temperature difference.
No matter be rectangle or hexgonal structure, spirit of the present invention still comprises other geometry, and it is in the creation spirit scope of the present invention included.
As shown in Figure 3, the first heat conduction non-conducting structure 140a comprises horizontal syndeton 140x and a plurality of vertical syndeton 140y that is connected between the horizontal syndeton 140x.Laterally syndeton 140x comprises a plurality of horizontal bars, and vertically syndeton 140y comprises a plurality of pillars.These pillars vertically are connected between the adjacent horizontal bars, to keep predetermined height.Each horizontal syndeton 140x flatly connects the first adjacent conductive material layer 120a, and vertically syndeton 140y then vertically is disposed at respectively in triangle or the subtriangular structure, connects adjacent horizontal syndeton 140x.See through the heat transmission of the first heat conduction non-conducting structure 140a of three-dimensional, can make the temperature of the first conductive material layer 120a almost can maintain first operating temperature, i.e. the hot junction operating temperature.
As shown in Figure 5, the horizontal syndeton 150x of the second heat conduction non-conducting structure 150a can be arranged in hexagonal network structure (being formed by connecting by six triangles or subtriangular structure), and thermoelectric P type thermoelectric conversion element 114a and N type thermoelectric conversion element 112a to layer 110a is that kenel with hexgonal structure is staggered on horizontal syndeton 150x.No matter be rectangle or hexgonal structure, spirit of the present invention still comprises other geometry, is in the creation spirit scope of the present invention included.
Illustrate as Fig. 3, thermoelectric conversion device 10 has hot junction substrate 12 and cold junction substrate 14.Wherein, hot junction substrate 12 is connected in the first heat conduction non-conducting structure 140a, 140b, the 140c of three-dimensional, and 14 of cold junction substrates are connected in the second heat conduction non-conducting structure 150a, 150b, the 150c of three-dimensional.The temperature of hot junction substrate 12 is delivered to respectively on the first conductive material layer 120a, 120b, the 120c via the first heat conduction non-conducting structure 140a, 140b, 140c, to maintain first operating temperature (for example being the hot-end operation temperature), cold junction substrate 14 then is that temperature is passed to respectively on the second conductive material layer 130a, 130b, the 130c through the second heat conduction non-conducting structure 150a, 150b, 150c, to maintain second operating temperature (for example being the cold junction operating temperature).Hot junction substrate 12 for example is highly heat-conductive materials such as silicon substrate or ceramic base material with the material of cold junction substrate 14.For instance, the temperature of cold junction substrate 14 is at 45 ℃, and when then the temperature of horizontal syndeton 150a, the 150b of each layer, 150c was 45-48 ℃, the second conductive material layer 130a of each layer, the temperature of 130b, 130c also maintained about 45-48 ℃.And the temperature of hot junction substrate 12 is at 80 ℃, the first conductive material layer 120a of each layer, the temperature of 120b, 120c remain on 70～80 ℃, the temperature difference because of the first conductive material layer 120a and the second conductive material layer 130a, that is the temperature difference of the top of arbitrary P type and N type thermoelectric conversion element and below is to maintain about 30 ℃, and each layer almost maintains the identical temperature difference.Otherwise, known stacked structure presents tangible graded because of the conductive structure of upper and lower layer is in contact with one another, for example 80 degree, 65 are spent, 55 degree, 45 are spent etc., so first conductive material layer that can't keep known each layer and second conductive material layer are in the identical temperature difference, and each layer temperature difference maintains between 10-15 ℃, and effect is relatively poor.
In sum, thermoelectric conversion device of the present invention utilizes first heat conduction non-conducting structure to make the heat of each layer first conductive material layer can transmit the reduction temperature gradient mutually, and utilize second heat conduction non-conducting structure to make the heat of second conductive material layer of each layer transmit the reduction temperature gradient mutually, so just can allow first conductive material layer of thermoelectric conversion layer top and below almost can keep identical temperature difference, improve the electricity generation efficiency of thermoelectric conversion device with second conductive material layer.
Though the present invention discloses as above with embodiment; right its is not in order to limit the present invention; those of ordinary skill in the technical field under any; without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention defines and is as the criterion when looking appended claim.
Claims (14)
1. thermoelectric conversion device comprises:
The cold junction substrate;
The hot junction substrate; And
Stacked structure is disposed between this cold junction substrate and this hot junction substrate, and this stacked structure comprises a plurality of thermoelectric conversion layer, and those thermoelectric conversion layer comprise respectively:
Thermoelectricity is arranged in this thermoelectric conversion layer layer, and this thermoelectricity comprises that to layer a plurality of thermoelectricity are right, and each thermoelectricity is to comprising P type thermoelectric conversion element and N type thermoelectric conversion element;
First conductive material layer comprises a plurality of first electric conducting materials, and each first electric conducting material connects the top of right P type thermoelectric conversion element of this thermoelectricity and N type thermoelectric conversion element respectively;
Second conductive material layer comprises a plurality of second electric conducting materials, and each second electric conducting material is connected to the below of right P type thermoelectric conversion element of this thermoelectricity and N type thermoelectric conversion element, so that thermoelectric in twos to connecting with the series connection pattern;
First heat conduction non-conducting structure is connected in the first adjacent electric conducting material interlayer and this hot junction substrate; And
Second heat conduction non-conducting structure is connected in the second adjacent electric conducting material interlayer and this cold junction substrate.
2. thermoelectric conversion device as claimed in claim 1, wherein this first heat conduction non-conducting structure heat conduction is to this first conductive material layer, so that first conductive material layer of each layer maintains under first operating temperature; And this second heat conduction non-conducting structure heat conduction is to this second conductive material layer, so that second conductive material layer of each layer maintains under second operating temperature, and this first operating temperature is not equal to this second operating temperature.
3. thermoelectric conversion device as claimed in claim 2, wherein this first operating temperature is the hot-end operation temperature, this second operating temperature is the cold junction operating temperature.
4. thermoelectric conversion device as claimed in claim 1, wherein this first heat conduction non-conducting structure comprises horizontal syndeton, this horizontal syndeton comprises a plurality of first continuous horizontal bars, in order to connect this first conductive material layer.
5. thermoelectric conversion device as claimed in claim 4, wherein this first heat conduction non-conducting structure also comprises vertical syndeton, and this vertical syndeton comprises a plurality of first pillars, those first pillars vertically are connected between those first horizontal bars.
6. thermoelectric conversion device as claimed in claim 1, wherein this second heat conduction non-conducting structure comprises horizontal syndeton, and this horizontal syndeton comprises a plurality of second continuous horizontal bars, in order to connect this second conductive material layer.
7. thermoelectric conversion device as claimed in claim 6, wherein this second heat conduction non-conducting structure also comprises vertical syndeton, and this vertical syndeton comprises a plurality of second pillars, those second pillars vertically are connected between those second horizontal bars.
8. thermoelectric conversion device as claimed in claim 6, wherein those second horizontal bars are arranged in network structure, and this second conductive material layer is disposed on this network structure.
9. thermoelectric conversion device as claimed in claim 8, wherein this network structure is a geometry.
10. thermoelectric conversion device as claimed in claim 1, wherein P type thermoelectric conversion element of each layer and N type thermoelectric conversion element are staggered with the kenel of hexgonal structure.
11. thermoelectric conversion device as claimed in claim 1, wherein P type thermoelectric conversion element of each layer and N type thermoelectric conversion element are staggered with the kenel of tetragonal structure.
12. thermoelectric conversion device as claimed in claim 1, wherein the material of this cold junction substrate comprises silicon substrate or ceramic base material.
13. thermoelectric conversion device as claimed in claim 1, wherein the material of this hot junction substrate comprises silicon substrate or ceramic base material.
14. thermoelectric conversion device as claimed in claim 1, wherein those thermoelectric right materials comprise Bi
2Te
3, PbTe, Sb
2Te
3Or SiGe.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910128221.6A CN101840989B (en) | 2009-03-18 | 2009-03-18 | Thermoelectric conversion device |
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| CN200910128221.6A CN101840989B (en) | 2009-03-18 | 2009-03-18 | Thermoelectric conversion device |
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| CN101840989A true CN101840989A (en) | 2010-09-22 |
| CN101840989B CN101840989B (en) | 2013-05-22 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102983791A (en) * | 2012-10-26 | 2013-03-20 | 苏州大学 | Temperature difference alternating current power generation device and power generation method thereof |
| CN103299443A (en) * | 2011-02-22 | 2013-09-11 | 松下电器产业株式会社 | Thermoelectric conversion element and producing method thereof |
| CN105099275A (en) * | 2015-07-29 | 2015-11-25 | 浙江大学 | Planar thermoelectric power generation structure with miniature boss array hot end |
| CN106784278A (en) * | 2015-11-24 | 2017-05-31 | 财团法人工业技术研究院 | Thermoelectric conversion device |
| CN110282597A (en) * | 2019-06-19 | 2019-09-27 | 南京邮电大学 | A kind of stack thermoelectric pile of hybrid connected structure |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3870568A (en) * | 1969-05-24 | 1975-03-11 | Siemens Ag | Heat generator |
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2009
- 2009-03-18 CN CN200910128221.6A patent/CN101840989B/en not_active Expired - Fee Related
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103299443A (en) * | 2011-02-22 | 2013-09-11 | 松下电器产业株式会社 | Thermoelectric conversion element and producing method thereof |
| US9219214B2 (en) | 2011-02-22 | 2015-12-22 | Panasonic Intellectual Property Management Co., Ltd. | Thermoelectric conversion element and producing method thereof |
| CN103299443B (en) * | 2011-02-22 | 2016-04-27 | 松下知识产权经营株式会社 | Thermoelectric conversion element and manufacture method thereof |
| CN102983791A (en) * | 2012-10-26 | 2013-03-20 | 苏州大学 | Temperature difference alternating current power generation device and power generation method thereof |
| CN105099275A (en) * | 2015-07-29 | 2015-11-25 | 浙江大学 | Planar thermoelectric power generation structure with miniature boss array hot end |
| CN106784278A (en) * | 2015-11-24 | 2017-05-31 | 财团法人工业技术研究院 | Thermoelectric conversion device |
| CN106784278B (en) * | 2015-11-24 | 2019-03-05 | 财团法人工业技术研究院 | Thermoelectric conversion device |
| US10340435B2 (en) | 2015-11-24 | 2019-07-02 | Industrial Technology Research Institute | Thermoelectric conversion device |
| CN110282597A (en) * | 2019-06-19 | 2019-09-27 | 南京邮电大学 | A kind of stack thermoelectric pile of hybrid connected structure |
| CN110282597B (en) * | 2019-06-19 | 2022-05-24 | 南京邮电大学 | Stack type thermopile with series-parallel structure |
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| CN101840989B (en) | 2013-05-22 |
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