CN101840989B - Thermoelectric conversion device - Google Patents
Thermoelectric conversion device Download PDFInfo
- Publication number
- CN101840989B CN101840989B CN 200910128221 CN200910128221A CN101840989B CN 101840989 B CN101840989 B CN 101840989B CN 200910128221 CN200910128221 CN 200910128221 CN 200910128221 A CN200910128221 A CN 200910128221A CN 101840989 B CN101840989 B CN 101840989B
- Authority
- CN
- China
- Prior art keywords
- thermoelectric conversion
- conductive material
- material layer
- layer
- heat conduction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Measuring Temperature Or Quantity Of Heat (AREA)
Abstract
The invention discloses a thermoelectric conversion device comprising a cold junction substrate, a hot junction substrate and a stacking structure, wherein the stacking structure is arranged between the cold junction substrate and the hot junction substrate and comprises a plurality of thermoelectric conversion layers, and each thermoelectric conversion layer comprises a thermoelectric relative layer, a first conducting material layer, a second conducting material layer, a first heat conduction non-conducting structure and a second heat conduction non-conducting structure; each thermoelectric conversion layer is respectively arranged in the stacking structure; the first conducting material layer comprises a plurality of first conducting materials, and the first conducting material is arranged above P-type and N-type thermoelectric conversion elements; the second conducting material layer comprises a plurality of second conducting materials, and the second conducting material is arranged below the P-type and N-type thermoelectric conversion elements; the first heat conduction non-conducting structure is respectively connected between two adjacent first conducting material layers, and the second heat conduction non-conducting structure is respectively connected between two adjacent second conducting material layers.
Description
Technical field
The present invention relates to a kind of thermoelectric conversion device, and particularly relate to a kind of thermoelectric conversion device with stacked structure.
Background technology
Make the important issue that develops into of renewable energy resources technology due to the energy shortage problem, take automobile as example, engine heat accounts for 1/3rd of vehicle power, if utilize exhaust waste heat that the thermoelectricity thermo-electric generation is provided, just can reduce the consumption of fuel oil.In addition, a large amount of used heat discharge in factory and family, how Waste Heat Recovery is re-used, and be also very important problem.Yet present most used heat there is no suitable recovery technology, therefore causes energy waste.
Thermoelectric generation technology is one of focus technology of industry research and development in recent years, the operation principle of thermoelectric generation technology is that N type semiconductor material and P type semiconductor material are coupled to thermoelectricity pair, utilize N-type and P type semiconductor material two end in contact different temperatures, so just, can produce power shift, at thermoelectricity centering generation current, be called Seebeck effect (Seebeck effect).The thermoelectricity conversion power generation is mainly to utilize the temperature difference at N-type and P type semiconductor material two ends to make thermoelectricity to generation current, so the thermoelectricity conversion power generation can be to environment, and the reaction rate of thermoelectricity conversion power generation is fast.The thermoelectricity conversion power generation more can be used as used heat the thermal source of thermoelectricity conversion power generation in conjunction with the technology of Waste Heat Recovery, reduces the waste of the energy.In addition, a plurality of thermoelectricity are to can electrically connecting and be stacked into thermoelectric conversion device, to meet different energy output demands.From another perspective, thermoelectric conversion device can be directly changed into electric energy with heat energy, does not need to see through the moving part (moving part) of similar engine pistons, therefore can improve the reliability of structure of thermoelectric conversion device.The manufacturing of thermoelectric conversion device can in conjunction with micro electronmechanical and semiconductor technology, significantly be dwindled the volume of thermoelectric conversion device.
Yet thermoelectricity conversion power generation maximum problem on using is that conversion efficiency of thermoelectric is limited.In order to improve the conversion efficiency of thermoelectric of thermoelectric conversion device, can be by the research and development of material technology, exploitation has the thermoelectric material of good thermoelectric property.In addition, because the packaging density of present thermoelectric conversion device is limited, the energy output of thermoelectric conversion device thereby be restricted, so another one improves the design that the important technology direction of conversion efficiency of thermoelectric is the present thermoelectric conversion device structure of improvement, and the packaging density of increase thermoelectric conversion device, to improve the electricity generation efficiency of thermoelectric conversion device.
Summary of the invention
The invention provides a kind of thermoelectric conversion device of tool stacked structure, its structure can be in order to improve the electricity generation efficiency of thermoelectric conversion device.
The present invention proposes a kind of thermoelectric conversion device, comprises cold junction substrate, hot junction substrate and stacked structure.Stacked structure is disposed between cold junction substrate and hot junction substrate, and stacked structure comprises a plurality of thermoelectric conversion layer, each thermoelectric conversion layer is arranged in respectively in stacked structure, and this thermoelectric conversion layer comprises that thermoelectricity is to layer, the first conductive material layer and the second conductive material layer, the first heat conduction non-conducting structure and the second heat conduction non-conducting structure.This first conductive material layer comprises a plurality of the first electric conducting materials, and this second conductive material layer comprises a plurality of the second electric conducting materials.This thermoelectricity to layer comprise a plurality of thermoelectricity to and each thermoelectricity to comprising P type thermoelectric conversion element and N-type thermoelectric conversion element, make the first electric conducting material be electrically connected at respectively the top of P type thermoelectric conversion element and N-type thermoelectric conversion element, and the second electric conducting material is electrically connected at respectively the below of N-type thermoelectric conversion element and adjacent P type thermoelectric conversion element, and in twos thermoelectricity to just connecting with the series connection pattern.The first heat conduction non-conducting structure is connected in two first adjacent electric conducting material interlayers and this hot junction substrate, and heat conduction to the first conductive material layer, and first conductive material layer of every one deck is maintained under the first operating temperature.Wherein this first operating temperature is the hot-end operation temperature.The second heat conduction non-conducting structure is connected to two second adjacent electric conducting material interlayers and this cold junction substrate, and heat conduction to the second conductive material layer, second conductive material layer of every one deck is maintained under the second operating temperature, and the first operating temperature is not equal to the second operating temperature.Wherein this second operating temperature is the cold junction operating temperature.
In an embodiment of the present invention, the first above-mentioned heat conduction non-conducting structure comprises transverse connection structure, and this transverse connection structure comprises a plurality of the first connected horizontal bars, in order to connect the first conductive material layer.In addition, the first heat conduction non-conducting structure also comprises longitudinal connection structure, and this longitudinal connection structure comprises a plurality of the first pillars, and these first pillars vertically are connected between these first horizontal bars.
In an embodiment of the present invention, the second above-mentioned heat conduction non-conducting structure comprises horizontal connection structure, and this horizontal connection structure comprises a plurality of the second connected horizontal bars, in order to connect the second conductive material layer.In addition, the second heat conduction non-conducting structure also comprises vertical connecting structure, and this vertical connecting structure comprises a plurality of the second pillars, and these second pillars vertically are connected between these second horizontal bars.
In an embodiment of the present invention, above-mentioned these the second horizontal bars is arranged in network structure, and the second conductive material layer is disposed on network structure.This network structure can be geometry.
In an embodiment of the present invention, the P type thermoelectric conversion element of above-mentioned every one deck and N-type thermoelectric conversion element are staggered with the kenel of hexgonal structure.
In another embodiment of the present invention, the P type thermoelectric conversion element of above-mentioned every one deck and N-type thermoelectric conversion element are staggered with the kenel of tetragonal structure
In an embodiment of the present invention, the material of above-mentioned cold junction substrate is for example silicon substrate, ceramic base material or other equivalent base materials.
In an embodiment of the present invention, the material of above-mentioned hot junction substrate is for example silicon substrate, ceramic base material or other equivalent base materials.
In an embodiment of the present invention, the right material of above-mentioned thermoelectricity is for example Bi
2Te
3, PbTe, Sb
2Te
3, SiGe or other equivalent materials.
Based on above-mentioned, thermoelectric conversion device of the present invention can see through the first heat conduction non-conducting structure and the second heat conduction non-conducting structure transferring heat, make the high temperature side of every one deck thermoelectric conversion layer can maintain the identical temperature difference with the temperature difference of low temperature side, and make the thermoelectricity of every one deck also almost identical to the temperature difference of layer, improving the energy output of every one deck thermoelectric conversion layer, and then improve the electricity generation efficiency of thermoelectric conversion device.
State feature and advantage on the present invention and can become apparent for allowing, embodiment cited below particularly, and coordinate the figure of institute to be described in detail below.
Description of drawings
Fig. 1 is the structure chart of the thermoelectric conversion device of embodiments of the invention.
Fig. 2 is the end view of the thermoelectric conversion device of Fig. 1.
Fig. 3 is the structure chart of the thermoelectric conversion device of another embodiment of the present invention.
Fig. 4 is the end view of the thermoelectric conversion device of Fig. 3.
Fig. 5 is the simple and easy vertical view of the thermoelectric conversion device of Fig. 3.
Description of reference numerals
10: thermoelectric conversion device
12: the hot junction substrate
14: the cold junction substrate
100: stacked structure
100a, 100b, 100c: thermoelectric conversion layer
110a, 110b, 110c: thermoelectricity is to layer
114a:P type thermoelectric conversion element
112a:N type thermoelectric conversion element
120a, 120b, 120c: the first conductive material layer
130a, 130b, 130c: the second conductive material layer
140a, 140b, 140c: the first heat conduction non-conducting structure
140x: transverse connection structure
140y: longitudinal connection structure
150a, 150b, 150c: the second heat conduction non-conducting structure
150x: horizontal connection structure
150y: vertical connecting structure
A1: the first electric conducting material
A2: the second electric conducting material
Embodiment
Fig. 1 is the structure chart of the thermoelectric conversion element of embodiments of the invention, and Fig. 2 is the end view of the thermoelectric conversion element of Fig. 1.Please refer to Fig. 1 and Fig. 2, the thermoelectric conversion device 10 of the present embodiment, this thermoelectric conversion device 10 comprises hot junction substrate 12, cold junction substrate 14 and stacked structure 100.Stacked structure 100 is disposed between hot junction substrate 12 and cold junction substrate 14, and stacked structure 100 comprises a plurality of thermoelectric conversion layer 100a, 100b.Wherein, thermoelectric conversion layer 100a comprises that thermoelectricity is to layer 110a, the first conductive material layer 120a and the second conductive material layer 130a, the first heat conduction non-conducting structure 140a and the second heat conduction non-conducting structure 150a.Thermoelectric conversion layer 100b comprises that thermoelectricity is to layer 110b, the first conductive material layer 120b and the second conductive material layer 130b, the first heat conduction non-conducting structure 140b and the second heat conduction non-conducting structure 150b.Each thermoelectric conversion layer 100a, 100b are arranged in stacked structure 100, and the present embodiment only is described as follows with the thermoelectric conversion layer 100a of the superiors,, do not carry therefore omit as thermoelectric conversion layer 100a as for the explanation of thermoelectric conversion layer 100b, repeat no more.
As shown in Figure 1, 2, each thermoelectricity of the present embodiment is arranged in thermoelectric conversion layer 100a layer 110a, this thermoelectricity to layer 110a comprise a plurality of thermoelectricity to and each thermoelectricity to comprising N-type thermoelectric conversion element 112a and P type thermoelectric conversion element 114a.This thermoelectricity can comprise for example Bi to the material of layer 110a
2Te
3, PbTe, Sb
2Te
3Or semi-conducting material or the thermoelectric material of nanostructure such as SiGe.The first conductive material layer 120a includes a plurality of the first electric conducting material a1, and the first electric conducting material a1 is electrically connected at respectively the thermoelectricity of thermoelectric conversion layer 100a to the top of N-type thermoelectric conversion element 112a and the P type thermoelectric conversion element 114a of layer 110a.The second conductive material layer 130a includes a plurality of the second electric conducting material a2, the below of the thermoelectricity that the second electric conducting material a2 is electrically connected at respectively thermoelectric conversion layer 100a to the N-type thermoelectric conversion element 112a of layer 110a and adjacent P type thermoelectric conversion element 114a.Thermoelectricity is to just connecting with the series connection pattern in twos.In above-mentioned cascaded structure, when each thermoelectricity when being in temperature difference state, move towards N-type thermoelectric conversion element 112a via the second conductive material layer 130a downwards in hole with positive charge in P type thermoelectric conversion element 114a, upwards move towards the first conductive material layer 120a via N-type thermoelectric conversion element 112a afterwards, and arrive another P type thermoelectric conversion element 114a, the rest may be inferred, with generation current.
In addition, the first heat conduction non-conducting structure 140a can connect the first conductive material layer 120a of thermoelectric conversion layer 100a, Main Function is that heat conduction is to the first conductive material layer 120a of thermoelectric conversion layer 100a, the first conductive material layer 120a almost can be maintained under the first operating temperature (being for example the hot-end operation temperature), and then the temperature difference of the first conductive material layer 120b in the first conductive material layer 120a in thermoelectric conversion layer 100a and adjacent thermoelectric conversion layer 100b is down to minimum.The second heat conduction non-conducting structure 150a is in order to connect the second conductive material layer 130a of thermoelectric conversion layer 100a, and heat conduction is to the second conductive material layer 130a of thermoelectric conversion layer 100a, the second conductive material layer 130a can be maintained under the second operating temperature (being for example the cold junction operating temperature), and then thermoelectricity is down to minimum to the temperature difference of the second conductive material layer 130b in the second conductive material layer 130a in conversion layer 100a and adjacent thermoelectric conversion layer 100b, and first operating temperature be not equal to the second operating temperature, to keep the temperature difference of hot junction and cold junction.The first heat conduction non-conducting structure 140a and second its material of heat conduction non-conducting structure 150a can be thermal conductivity well and do not have the material of conductivity, so heat can be passed to respectively effectively the first conductive material layer 120a and the second conductive material layer 130a, and can not affect the right generating effect of each thermoelectricity.
Please continue with reference to figure 1, the second heat conduction non-conducting structure 150a of the present embodiment comprises horizontal connection structure 150x, and horizontal connection structure 150x comprises a plurality of connected horizontal bars.In addition, also have vertical connecting structure 150y between adjacent horizontal connection structure 150x, it comprises a plurality of pillars.These pillars vertically are connected between horizontal bars, to maintain in predetermined altitude.It is worth mentioning that, horizontal connection structure 150x is neither to be contacted with the first conductive material layer 120a, 120b, only contacts with the second conductive material layer 130a.Therefore, the temperature of horizontal connection structure 150x can not affect the temperature of the first conductive material layer 120a, 120b, makes the temperature difference of the first conductive material layer 120a, the second conductive material layer 130a of thermoelectric conversion layer 100a can maintain the identical temperature difference with the first conductive material layer 120b of thermoelectric conversion layer 100b, the temperature difference of the second conductive material layer 130b.
In addition, in the present embodiment, the first heat conduction non-conducting structure 140a comprises transverse connection structure 140x and a plurality of longitudinal connection structure 140y that is connected between transverse connection structure 140x.Transverse connection structure 140x is in order to flatly to connect the first conductive material layer 120a, and longitudinal connection structure 140y can vertically be arranged among dimetric network structure respectively.Transverse connection structure 140x comprises a plurality of horizontal bars, and longitudinal connection structure 140y comprises a plurality of pillars.These pillars vertically are connected between horizontal bars, to keep predetermined height.
Illustrate as Fig. 1, thermoelectric conversion device 10 has hot junction substrate 12 and cold junction substrate 14.Wherein, hot junction substrate 12 is connected in the first heat conduction non-conducting structure 140a, the 140b of three-dimensional, and 14 of cold junction substrates are connected in the second heat conduction non-conducting structure 150a, the 150b of three-dimensional.The temperature of hot junction substrate 12 is delivered to respectively on the first conductive material layer 120a, 120b via the first heat conduction non-conducting structure 140a, 140b, to maintain the first operating temperature (being for example the hot-end operation temperature), cold junction substrate 14 is that temperature is passed to respectively on the second conductive material layer 130a, 130b through the second heat conduction non-conducting structure 150a, 150b, to maintain the second operating temperature (being for example the cold junction operating temperature).The material of hot junction substrate 12 and cold junction substrate 14 is such as being the highly heat-conductive materials such as silicon substrate or ceramic base material.
Fig. 3 is the structure chart of the thermoelectric conversion device of another embodiment of the present invention, and Fig. 4 is the end view of the thermoelectric conversion device of Fig. 3, and Fig. 5 is the simple and easy vertical view of the thermoelectric conversion device of Fig. 3.The thermoelectric conversion device 10 of the present embodiment comprises hot junction substrate 12, cold junction substrate 14 and stacked structure 100.Stacked structure 100 is disposed between hot junction substrate 12 and cold junction substrate 14, and stacked structure 100 comprises a plurality of thermoelectric conversion layer 100a, 100b, 100c.Wherein, thermoelectric conversion layer 100a comprises that thermoelectricity is to layer 110a, the first conductive material layer 120a and the second conductive material layer 130a, the first heat conduction non-conducting structure 140a and the second heat conduction non-conducting structure 150a.Thermoelectric conversion layer 100b comprises that thermoelectricity is to layer 110b, the first conductive material layer 120b and the second conductive material layer 130b, the first heat conduction non-conducting structure 140b and the second heat conduction non-conducting structure 150b.Thermoelectric conversion layer 100c comprises that thermoelectricity is to layer 110c, the first conductive material layer 120c and the second conductive material layer 130c, the first heat conduction non-conducting structure 140c and the second heat conduction non-conducting structure 150c.The present embodiment will explain layer 110a, 110b, 110c, three layer of first conductive material layer 120a, 120b, 120c, three layer of second conductive material layer 130a, 130b, 130c, three layer of first heat conduction non-conducting structure 140a, 140b, 140c, three layer of second heat conduction non-conducting structure 150a, 150b, 150c for three layers of thermoelectric conversion layer 100a, 100b, 100c, three layers of thermoelectricity.Each thermoelectric conversion layer 100a, 100b and 100c are arranged in stacked structure 100, the present embodiment only is described as follows with the thermoelectric conversion layer 100a of the superiors,, do not carry therefore omit as thermoelectric conversion layer 100a as for the explanation of thermoelectric conversion layer 100b, 100c, repeat no more.
Thermoelectricity is arranged in thermoelectric conversion layer 100a layer 110a, and thermoelectricity comprises a plurality of thermoelectricity pair to layer 110a, and each thermoelectricity is to comprising P type thermoelectric conversion element 114a and N-type thermoelectric conversion element 112a.Thermoelectricity can comprise for example Bi to the material of layer 110a
2Te
3, PbTe, Sb
2Te
3Or semi-conducting material or the thermoelectric material of nanostructure such as SiGe.The first conductive material layer 120a includes a plurality of the first electric conducting material a1, and the first electric conducting material a1 is electrically connected at respectively the top of the right P type thermoelectric conversion element 114a of thermoelectricity and N-type thermoelectric conversion element 112a.The second conductive material layer 130a includes a plurality of the second electric conducting material a2, the second electric conducting material a2 is electrically connected at respectively the below of the right P type thermoelectric conversion element 114a of thermoelectricity and N-type thermoelectric conversion element 112a, and for the N-type thermoelectric conversion element connects P type thermoelectric conversion element, P type thermoelectric conversion element connects another N-type thermoelectric conversion element, and thermoelectricity connects the pattern of just can connecting in twos.In above-mentioned cascaded structure, when each thermoelectricity when being in temperature difference state, move towards N-type thermoelectric conversion element 112a via the second conductive material layer 130a downwards in hole with positive charge in P type thermoelectric conversion element 114a, upwards move towards the first conductive material layer 120a via N-type thermoelectric conversion element 112a afterwards, and arrive another P type thermoelectric conversion element 114a, the rest may be inferred, with generation current.
In addition, the first heat conduction non-conducting structure 140a can connect the first conductive material layer 120a of thermoelectric conversion layer 100a, Main Function is that heat conduction is to the first conductive material layer 120a of thermoelectric conversion layer 100a, the first conductive material layer 120a almost can be maintained under the first operating temperature (being for example the hot-end operation temperature), and then the temperature difference of the first conductive material layer 120b in the first conductive material layer 120a in thermoelectric conversion layer 100a and adjacent thermoelectric conversion layer 100b is down to minimum.The second heat conduction non-conducting structure 150a is in order to connect the second conductive material layer 130a of thermoelectric conversion layer 100a, and heat conduction is to the second conductive material layer 130a of thermoelectric conversion layer 100a, the second conductive material layer 130a can be maintained under the second operating temperature (being for example the cold junction operating temperature), and then thermoelectricity is down to minimum to the temperature difference of the second conductive material layer 130b in the second conductive material layer 130a in conversion layer 100a and adjacent thermoelectric conversion layer 100b, and first operating temperature be not equal to the second operating temperature, to keep the temperature difference of hot junction and cold junction.The first heat conduction non-conducting structure 140a and second its material of heat conduction non-conducting structure 150a can be thermal conductivity well and do not have the material of conductivity, so heat can be passed to respectively effectively the first conductive material layer 120a and the second conductive material layer 130a, and can not affect the right generating effect of each thermoelectricity.
Please continue with reference to figure 3, the second heat conduction non-conducting structure 150a of the present embodiment comprises horizontal connection structure 150x, and horizontal connection structure 150x comprises a plurality of connected horizontal bars.In addition, also have vertical connecting structure 150y between adjacent horizontal connection structure 150x, it comprises a plurality of pillars.These pillars vertically are connected between horizontal bars, to maintain in predetermined altitude.It is worth mentioning that, horizontal connection structure 150x is neither to be contacted with the first conductive material layer 120a, 120b, 120c, only contacts with the second conductive material layer 130a.Therefore, the temperature of horizontal connection structure 150x can not affect the temperature of the first conductive material layer 120a, 120b, 120c, makes the temperature difference of the first conductive material layer 120b, the second conductive material layer 130b of the temperature difference, thermoelectric conversion layer 100b of the first conductive material layer 120a, the second conductive material layer 130a of thermoelectric conversion layer 100a and the first conductive material layer 120c of thermoelectric conversion layer 100c, the temperature difference of the second conductive material layer 130c can maintain the identical temperature difference.
No matter be rectangle or hexgonal structure, spirit of the present invention still comprises other geometry, and it is in creation spirit scope of the present invention included.
As shown in Figure 3, the first heat conduction non-conducting structure 140a comprises transverse connection structure 140x and a plurality of longitudinal connection structure 140y that is connected between transverse connection structure 140x.Transverse connection structure 140x comprises a plurality of horizontal bars, and longitudinal connection structure 140y comprises a plurality of pillars.These pillars vertically are connected between adjacent horizontal bars, to keep predetermined height.Each transverse connection structure 140x flatly connects the first adjacent conductive material layer 120a, and longitudinal connection structure 140y vertically is disposed at respectively in triangle or subtriangular structure, connects adjacent transverse connection structure 140x.See through the heat transmission of the first heat conduction non-conducting structure 140a of three-dimensional, can make the temperature of the first conductive material layer 120a almost can maintain the first operating temperature, i.e. the hot junction operating temperature.
As shown in Figure 5, the horizontal connection structure 150x of the second heat conduction non-conducting structure 150a can be arranged in hexagonal network structure (being formed by connecting by six triangles or subtriangular structure), and thermoelectricity is that kenel with hexgonal structure is staggered on horizontal connection structure 150x to the P type thermoelectric conversion element 114a of layer 110a and N-type thermoelectric conversion element 112a.No matter be rectangle or hexgonal structure, spirit of the present invention still comprises other geometry, is in creation spirit scope of the present invention included.
Illustrate as Fig. 3, thermoelectric conversion device 10 has hot junction substrate 12 and cold junction substrate 14.Wherein, hot junction substrate 12 is connected in the first heat conduction non-conducting structure 140a, 140b, the 140c of three-dimensional, and 14 of cold junction substrates are connected in the second heat conduction non-conducting structure 150a, 150b, the 150c of three-dimensional.The temperature of hot junction substrate 12 is delivered to respectively on the first conductive material layer 120a, 120b, 120c via the first heat conduction non-conducting structure 140a, 140b, 140c, to maintain the first operating temperature (being for example the hot-end operation temperature), cold junction substrate 14 is that temperature is passed to respectively on the second conductive material layer 130a, 130b, 130c through the second heat conduction non-conducting structure 150a, 150b, 150c, to maintain the second operating temperature (being for example the cold junction operating temperature).The material of hot junction substrate 12 and cold junction substrate 14 is such as being the highly heat-conductive materials such as silicon substrate or ceramic base material.For instance, the temperature of cold junction substrate 14 is at 45 ℃, and when the temperature of horizontal connection structure 150a, the 150b of every one deck, 150c was 45-48 ℃, the second conductive material layer 130a of every one deck, the temperature of 130b, 130c also maintained 45-48 ℃ of left and right.And the temperature of hot junction substrate 12 is at 80 ℃, the first conductive material layer 120a of every one deck, the temperature of 120b, 120c remain on 70～80 ℃, the temperature difference because of the first conductive material layer 120a and the second conductive material layer 130a, that is the temperature difference of the top of arbitrary P type and N-type thermoelectric conversion element and below is to maintain 30 ℃ of left and right, and every one deck almost maintains the identical temperature difference.Otherwise, known stacked structure presents obvious graded because the conductive structure of upper and lower layer is in contact with one another, such as 80 degree, 65 degree, 55 degree, 45 degree etc., therefore the first conductive material layer that can't keep known each layer with the second conductive material layer in the identical temperature difference, and every one deck temperature difference maintains between 10-15 ℃, and effect is relatively poor.
In sum, thermoelectric conversion device of the present invention utilizes the first heat conduction non-conducting structure to make the heat of every one deck the first conductive material layer can mutually transmit the reduction temperature gradient, and utilize the second heat conduction non-conducting structure to make the heat of second conductive material layer of every one deck mutually transmit the reduction temperature gradient, so just can allow the first conductive material layer and second conductive material layer of thermoelectric conversion layer top and below almost can keep identical temperature difference, the electricity generation efficiency of raising thermoelectric conversion device.
Although the present invention discloses as above with embodiment; so it is not to limit the present invention; those of ordinary skill in technical field under any; without departing from the spirit and scope of the present invention; when can do a little change and retouching, therefore protection scope of the present invention defines and is as the criterion when looking appended claim.
Claims (10)
1. thermoelectric conversion device comprises:
The cold junction substrate;
The hot junction substrate; And
Stacked structure is disposed between this cold junction substrate and this hot junction substrate, and this stacked structure comprises a plurality of thermoelectric conversion layer, and those thermoelectric conversion layer comprise respectively:
Thermoelectricity is arranged in this thermoelectric conversion layer layer, and this thermoelectricity comprises a plurality of thermoelectricity pair to layer, and each thermoelectricity is to comprising P type thermoelectric conversion element and N-type thermoelectric conversion element;
The first conductive material layer comprises a plurality of the first electric conducting materials, and each first electric conducting material connects respectively the top of the right P type thermoelectric conversion element of this thermoelectricity and N-type thermoelectric conversion element;
The second conductive material layer comprises a plurality of the second electric conducting materials, and each second electric conducting material is connected to the below of the right P type thermoelectric conversion element of this thermoelectricity and N-type thermoelectric conversion element so that in twos thermoelectricity to connecting with the series connection pattern;
The first heat conduction non-conducting structure is connected in the first adjacent electric conducting material interlayer, and connects this hot junction substrate, and wherein this first heat conduction non-conducting structure comprises:
A plurality of the first transverse connection structures comprise a plurality of the first horizontal bars that are connected with each other, and wherein those first transverse connection structures do not contact this second conductive material layer and laterally contact this first conductive material layer; And
A plurality of the first longitudinal connection structures comprise that a plurality of the first pillars vertically are connected between those first horizontal bars, and wherein those first longitudinal connection structures vertically are disposed at respectively in the structure of geometry; And
The second heat conduction non-conducting structure is connected in the second adjacent electric conducting material interlayer, and connects this cold junction substrate, and wherein this second heat conduction non-conducting structure comprises:
A plurality of the second horizontal connection structures, those second horizontal connection structures comprise the second a plurality of horizontal bars that is connected with each other, and wherein those second horizontal connection structures do not contact this first conductive material layer and laterally contact this second conductive material layer; And
A plurality of the second vertical connecting structures comprise that a plurality of the second pillars vertically are connected between those second horizontal bars.
2. thermoelectric conversion device as claimed in claim 1, wherein this first heat conduction non-conducting structure heat conduction is to this first conductive material layer, so that first conductive material layer of every one deck maintains under the first operating temperature; And this second heat conduction non-conducting structure heat conduction is to this second conductive material layer, so that second conductive material layer of every one deck maintains under the second operating temperature, and this first operating temperature is not equal to this second operating temperature.
3. thermoelectric conversion device as claimed in claim 2, wherein this first operating temperature is the hot-end operation temperature, this second operating temperature is the cold junction operating temperature.
4. thermoelectric conversion device as claimed in claim 1, wherein those second horizontal bars are arranged in network structure, and this second conductive material layer is disposed on this network structure.
5. thermoelectric conversion device as claimed in claim 4, wherein this network structure is geometry.
6. thermoelectric conversion device as claimed in claim 1, wherein the P type thermoelectric conversion element of every one deck and N-type thermoelectric conversion element are staggered with the kenel of hexgonal structure.
7. thermoelectric conversion device as claimed in claim 1, wherein the P type thermoelectric conversion element of every one deck and N-type thermoelectric conversion element are staggered with the kenel of tetragonal structure.
8. thermoelectric conversion device as claimed in claim 1, wherein the material of this cold junction substrate comprises silicon substrate or ceramic base material.
9. thermoelectric conversion device as claimed in claim 1, wherein the material of this hot junction substrate comprises silicon substrate or ceramic base material.
10. thermoelectric conversion device as claimed in claim 1, wherein the right material of those thermoelectricity comprises Bi
2Te
3, PbTe, Sb
2Te
3Or SiGe.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910128221 CN101840989B (en) | 2009-03-18 | 2009-03-18 | Thermoelectric conversion device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910128221 CN101840989B (en) | 2009-03-18 | 2009-03-18 | Thermoelectric conversion device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101840989A CN101840989A (en) | 2010-09-22 |
| CN101840989B true CN101840989B (en) | 2013-05-22 |
Family
ID=42744235
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200910128221 Expired - Fee Related CN101840989B (en) | 2009-03-18 | 2009-03-18 | Thermoelectric conversion device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101840989B (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5308577B2 (en) * | 2011-02-22 | 2013-10-09 | パナソニック株式会社 | Thermoelectric conversion element and manufacturing method thereof |
| CN102983791A (en) * | 2012-10-26 | 2013-03-20 | 苏州大学 | Temperature difference alternating current power generation device and power generation method thereof |
| CN105099275B (en) * | 2015-07-29 | 2017-08-25 | 浙江大学 | Plane thermo-electric generation structure with micro-boss array hot junction |
| TWI574438B (en) * | 2015-11-24 | 2017-03-11 | 財團法人工業技術研究院 | Thermoelectric conversion device |
| CN110282597B (en) * | 2019-06-19 | 2022-05-24 | 南京邮电大学 | Stack type thermopile with series-parallel structure |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3870568A (en) * | 1969-05-24 | 1975-03-11 | Siemens Ag | Heat generator |
-
2009
- 2009-03-18 CN CN 200910128221 patent/CN101840989B/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3870568A (en) * | 1969-05-24 | 1975-03-11 | Siemens Ag | Heat generator |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101840989A (en) | 2010-09-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101840989B (en) | Thermoelectric conversion device | |
| CN101952978A (en) | Power generating device including a photovoltaic converter as well as a thermoelectric converter included in the carrier substrate of the photovoltaic converter | |
| KR20120064517A (en) | A thermoelectric element and a thermoelectric module | |
| US8008573B2 (en) | Integrated package structure having solar cell and thermoelectric element and method of fabricating the same | |
| JP5603495B2 (en) | Thermoelectric module including thermoelectric element doped with nanoparticles and method for manufacturing the same | |
| CN102456829A (en) | Thermoelectric generator including a thermoelectric module having a meandering p-n system | |
| CN101477981A (en) | Light source module and manufacturing process thereof | |
| KR20150130168A (en) | Device using thermoelectric moudule | |
| TWI395354B (en) | Thermoelectric conversion device | |
| KR100853749B1 (en) | Unit module for thermoelectric generation and Thermoelectric set including the same and Method of making the same | |
| TWI443882B (en) | Thermoelectric apparatus and method of fabricating the same | |
| US20210296553A1 (en) | High-power thermoelectric conversion module and thermoelectric conversion system | |
| CN101350580B (en) | Solid-state thermo-electric generation plate and apparatus thereof | |
| CN205123620U (en) | Phase transition restraines heat transfer thermoelectric generator spare | |
| CN103794581A (en) | Thermoelectricity radiating device | |
| US20180287038A1 (en) | Thermoelectric conversion device | |
| KR101046130B1 (en) | Thermoelectric element | |
| KR20160005588A (en) | temperature sensor | |
| WO2018158352A1 (en) | Thermoelectric device | |
| JP2013084874A (en) | Thermoelectric module | |
| US20200052178A1 (en) | Thermoelectric conversion device | |
| KR101068647B1 (en) | Thermoelectric energy conversion module having spring structure | |
| KR20160118747A (en) | Thermoelectric device moudule and device using the same | |
| KR20210020461A (en) | Nanowire Thermoelectric device having a 3-Dimensional Stacked Nanowire and Method of Manufacturing the same | |
| KR20170107273A (en) | Thermoelectric module |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130522 Termination date: 20200318 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |