CN101840970B - Lateral cooling LED (Light-Emitting Diode) and manufacture method thereof - Google Patents
Lateral cooling LED (Light-Emitting Diode) and manufacture method thereof Download PDFInfo
- Publication number
- CN101840970B CN101840970B CN 200910119568 CN200910119568A CN101840970B CN 101840970 B CN101840970 B CN 101840970B CN 200910119568 CN200910119568 CN 200910119568 CN 200910119568 A CN200910119568 A CN 200910119568A CN 101840970 B CN101840970 B CN 101840970B
- Authority
- CN
- China
- Prior art keywords
- semiconductor layer
- layer
- type conducting
- conducting
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Led Devices (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a lateral cooling LED (Light-Emitting Diode) and a manufacture method thereof. The LED comprises a substrate, an N-type conducting semiconductor layer, a luminous layer, a P-type conducting semiconductor layer and a cooling layer. The N-type conducting semiconductor layer is arranged on the substrate, the luminous layer is arranged on the N-type conducting semiconductor layer, the P-type conducting semiconductor layer is arranged on the luminous layer, and the N-type conducting semiconductor layer is connected to an encapsulating carrier by the cooling layer. In the invention, heat energy is conducted out of the LED by utilizing a metal layer with patterns and a lateral cooling layer to increase the heat energy dispersion speed of the LED and improve the luminous efficiency of the LED.
Description
Technical field
The present invention relates to the technical field of light-emitting diode, particularly a kind of light-emitting diode of side heat radiating type.
Background technology
The use of light-emitting diode now (light emitting diode) is more and more general, reason be light-emitting diode have the life-span long, power consumption is low and characteristic such as confidence level height.In order to promote the luminosity of light-emitting diode, normally increase its input power through the running current density that improves light-emitting diode.In case and the running current of light-emitting diode increases, its junction temperature (junction temperature) also can rise thereupon.Will certainly cause the inner fluorescent material of band structure change and encapsulating structure thereof or encapsulating structure rotten thus, and make the brightness of its light-emitting diode or the decline of function.So when promoting light-emitting diode luminance, the LED heat radiating function also must be strengthened thereupon.Therefore, in order to solve the high heat energy problem that High Power LED produces, many prior aries and the importance of studying emphasical light-emitting diode heat energy dissipation (thermal dissipation).
In the light emitting diode construction of prior art, its radiating effect is unfavorable often.The prior art content of U.S. Patent number US5563422 for example, wherein light-emitting diode nude film structure does not have the structure of other special heat sinking function or heat energy that device is helped the light-emitting diode nude film is dispersed, so its luminous efficiency is restricted often.
A prior art utilizes electrode structure to help the heat radiation of light-emitting diode nude film in order to solve the problem of its poor heat radiation of light-emitting diode.In the prior art of U.S. Patent number US6614172; In order to promote the luminous efficiency of light-emitting diode; Prior art uses the nude film that covers crystalline substance (flip chip) and surface coarsening to increase luminous efficient, and utilizes the electrode of metal structure to help the heat sinking function of the conduction of heat energy with the increase light-emitting diode.But this technology can cause electric heating to conduct unsegregated problem, i.e. heat energy and influencing each other of conduct electrical energy and the problem that generates.The not high increase that also can cause of the fine ratio of product of above-mentioned in addition prior art at commercial cost.
A prior art is through solving the poor heat radiation problem of light-emitting diode, to promote the luminous efficiency of light-emitting diode.In the prior art of U.S. Patent number US6818531; Utilize laser lift-off (laserlift-off; LLO) technology makes light-emitting diode peel off original epitaxial substrate, and anchors on the good substrate of other heat radiation, to increase the heat radiation function of light-emitting diode.Though this prior art can provide light-emitting diode one heat-radiating substrate to promote the luminous efficiency of light-emitting diode, it has the manufacturing equipment costliness, and shortcoming such as fine ratio of product and yield per unit area is low.
A prior art increases the function of heat radiation through the vertical LED structure.In the prior art of U.S. Patent number US5739554, the substrate (N-SiC) of the carborundum of the structure of this techniques make use vertical LED and N-type conduction is helped heat radiation.But the substrate price of the carborundum of N-type conduction is high, and the poor and crystal quality of machining property is difficult to reach and Al
2O
3The effect same of substrate.In addition, the substrate of carborundum can absorb the ultraviolet light below the 380nm, therefore is not suitable for being used for being configured on the light-emitting diode with the following ultraviolet light of 380nm.
A prior art utilizes the structure of metallic copper (copper) coating light-emitting diode side to solve the problem that heat energy dissipates.This prior art is disclosed in the meeting paper of TaiWan, China National Chung Hsing University and " electroplates heat energy dissipation and the light output that strengthens GaN/ sapphire LED through direct copper " [" Enhanced thermaldissipation and light output of GaN/Sapphire light-emitting diode by direct Cuelectroplating ", Conference Paper National Chung Hsing University].This prior art is utilized the thermal conduction characteristic of metallic copper, through the structure of metallic copper coating light-emitting diode side, as the thermal energy conduction interface of light-emitting diode.Because its light-emitting diode side area of dissipation is little in this structure, causes its radiating effect limited, and if this structure be positioned at and have super-large current and drive light-emitting diode down its advantage existence is just arranged.
A prior art is also utilized the substrate of metallic copper coating light-emitting diode and is formed at the light emitting diode construction side, increases the dissipation of heat energy.This technology is disclosed in " Applied Physics wall bulletin " 93; 11907 (2008) " improving the heat management of the GaN/ sapphire LED that embeds the heat reflective emanator " [" Improved thermal management of GaN/sapphire light emitting diodesembedded in reflective heat spreaders "; Applied Physics Letters 93,11907 (2008)].This prior art is utilized the thermal conduction characteristic of metallic copper, makes the substrate of metallic copper coating light-emitting diode and is formed at the structure side, increases area of dissipation whereby.Because the zone of copper clad is the substrate of light-emitting diode, fail directly to dissipate the heat energy that junction temperature generated.In addition, this technology is little at its area of dissipation of side structure, causes its radiating effect limited.
Above-mentioned prior art, except the technology of laser lift-off can solve the problem of the dissipation heat energy of light emitting diode construction most effectively, the radiating effect of all the other prior aries is not good or not obvious.But because its price of technology and the production capacity yield of laser lift-off all have the puzzlement on the volume production, the heat energy of wanting a new technology to solve light-emitting diode of therefore still needing dissipates.
Summary of the invention
The present invention proposes a kind of side cooling LED structure and manufacturing approach, and with respect to the technology of using laser lift-off, its cost more cheaply and effectively solves the problem of PN junction heat radiation.
Seeing that the problems referred to above of the existence of above-mentioned background of invention, the object of the invention is the light-emitting diode that an excellent in heat dissipation effect is provided, and cooperates encapsulation technology that thermal source is derived by side structure.
The present invention discloses a side cooling LED, and it comprises semiconductor layer, a luminescent layer of a substrate, a N type conducting, the semiconductor layer and a heat dissipating layer of a P type conducting.The semiconductor layer of N type conducting is positioned on this substrate; Luminescent layer is positioned on the semiconductor layer of this N type conducting; The semiconductor layer of P type conducting is positioned on this luminescent layer; And heat dissipating layer, connect on semiconductor layer to an encapsulating carrier plate of this N type conducting.
Comprised a resilient coating between the semiconductor layer of above-mentioned substrate and the conducting of N type, wherein had a unadulterated semiconductor layer between the semiconductor layer of resilient coating and the conducting of N type, and luminescent layer is between the semiconductor layer of the semiconductor layer of N type conducting and the conducting of P type.Can form between the semiconductor layer of unadulterated in addition semiconductor and the conducting of N type one have a pattern metal level, its pattern of metal level that wherein has pattern is a plurality of holes, and this has the metal level of pattern and the semiconductor layer ohmic contact of N type conducting.Hold said structure, wherein the semiconductor layer of semiconductor layer, luminescent layer and the conducting of N type of the P type conducting of a part is removed and makes the semiconductor layer of part N type conducting come out.Have a P electrode on the semiconductor layer of above-mentioned P type conducting, and a N electrode is positioned on the semiconductor layer of the part N type conducting that exposes or is positioned on the metal level with pattern.An other protective layer covers the semiconductor layer of above-mentioned P type conducting and the semiconductor layer of N type conducting, and exposes above-mentioned N electrode and P electrode.And above-mentioned heat dissipating layer connects the semiconductor layer of above-mentioned metal level with pattern or the conducting of N type to encapsulating carrier plate.
The present invention discloses a kind of manufacturing approach of side cooling LED in addition, the semiconductor layer that its step comprises provides a substrate, form a N type conducting on the substrate, form a luminescent layer on the semiconductor layer of N type conducting, the semiconductor layer that forms a P type conducting on the luminescent layer and the last heat dissipating layer that in encapsulation process, forms on the semiconductor layer of N type conducting.
In the step of above-mentioned manufacturing, comprised and formed a resilient coating between the semiconductor layer of above-mentioned substrate and the conducting of N type, and formed a unadulterated semiconductor layer between the semiconductor layer of resilient coating and the conducting of N type.Can form between the semiconductor layer of above-mentioned in addition unadulterated semiconductor and the conducting of N type one have a pattern metal level; Wherein above-mentioned its pattern of the metal level with pattern is a plurality of holes, and the semiconductor layer ohmic contact of above-mentioned metal level with pattern and the conducting of N type.Hold above-mentioned steps; Wherein the semiconductor layer of semiconductor layer, luminescent layer and the conducting of N type of the P type conducting of a part is removed and makes the semiconductor layer of part N type conducting come out; And on the semiconductor layer of above-mentioned P type conducting, form a P electrode, form a N electrode simultaneously on the semiconductor layer of the part N type conducting that exposes or be formed on the metal level with pattern.Form a protective layer in addition and be covered in the semiconductor layer of above-mentioned P type conducting and the semiconductor layer of N type conducting, and expose outside above-mentioned N electrode and P electrode.And in encapsulation process, above-mentioned heat dissipating layer is formed on the semiconductor layer of above-mentioned metal level with pattern or the conducting of N type, and extend on the encapsulating carrier plate.
Disclosed side cooling LED conducts the luminescent layer thermal source go out via side through the above-mentioned metal level with pattern, and cooperates encapsulating structure that thermal source is derived outside the light emitting diode construction.This structure can be improved the light-emitting diode of traditional coplanar electrode must be by the shortcoming of the epitaxial substrate of conductive coefficient difference heat radiation.
Compared to the technology of laser lift-off, disclosed light-emitting diode, the cost that need not increase its manufacturing can improve the unfavorable problem of light-emitting diode heat extraction, and then provides high efficient LED that better luminous efficiency can be arranged.
Therefore further objective of the present invention is the luminous efficiency of the light-emitting diode that improves traditional coplanar electrode.
Description of drawings
Fig. 1 a shows disclosed side cooling LED cross-sectional view;
Fig. 1 b shows disclosed side cooling LED schematic top plan view;
Fig. 2 a to Fig. 2 c shows disclosed side cooling LED schematic diagram of fabrication technology;
Fig. 3 a shows disclosed side cooling LED cross-sectional view;
Fig. 3 b shows disclosed side cooling LED schematic top plan view;
Fig. 4 a to Fig. 4 c shows disclosed side cooling LED schematic diagram of fabrication technology;
Fig. 5 a shows disclosed side cooling LED cross-sectional view;
Fig. 5 b shows disclosed side cooling LED schematic top plan view;
Fig. 6 a to Fig. 6 c shows disclosed side cooling LED schematic diagram of fabrication technology; And
Fig. 7 shows disclosed side cooling LED section encapsulating structure sketch map.
Description of reference numerals in the above-mentioned accompanying drawing is following:
01,02,03 side cooling LED
4, the metal level of 5,8 tool patterns
6,61,62 photo mask layer
7,71,72 photoresist layers
9,91,92 light sources
10,20,30 substrates
11,21,31, the semiconductor layer of 41N type conducting
12,22,32,42 luminescent layers
13,23, the semiconductor layer of 33P type conducting
14,24,34,44 heat dissipating layers
15,25,35 semiconductor original paper layers
16,26,36 unadulterated semiconductor layers
17,27,37 positive electrodes
18,28,38 negative electrodes
19,29,39 protective layers
21,22,23 metal levels
40 encapsulating carrier plates
51,81 holes
52,82 pattern metal
Embodiment
The present invention discloses a side cooling LED, in order to understand the present invention up hill and dale, will in following description, propose detailed step.Apparently, enforcement of the present invention is not defined in the known specific details of those of ordinary skill in the field of light-emitting diode.On the other hand, well-known step is not described in the details, with the restriction of avoiding causing the present invention unnecessary.The preferred embodiments of the present invention can be described in detail as follows, yet except these were described in detail, the present invention can also be implemented among other the embodiment widely, and scope of the present invention constrained not, and it is as the criterion with appended claim.
The present invention discloses a side cooling LED, and it comprises semiconductor layer, a luminescent layer of a substrate, a N type conducting, the semiconductor layer and a heat dissipating layer of a P type conducting.
Comprised a resilient coating between the semiconductor layer of above-mentioned substrate and the conducting of N type, wherein had a unadulterated semiconductor layer between the semiconductor layer of resilient coating and the conducting of N type, and luminescent layer is between the semiconductor layer of the semiconductor layer of N type conducting and the conducting of P type.
Can form between the semiconductor layer of unadulterated in addition semiconductor layer and the conducting of N type one have a pattern metal level, its pattern of metal level that wherein has pattern is a plurality of holes, and this has the metal level of pattern and the semiconductor layer ohmic contact of N type conducting.
Hold said structure, wherein the semiconductor layer of semiconductor layer, luminescent layer and the conducting of N type of the P type conducting of a part is removed and makes the semiconductor layer of part N type conducting come out.Have a P electrode on the semiconductor layer of above-mentioned P type conducting, and a N electrode is positioned on the semiconductor layer of the part N type conducting that exposes or is positioned on the metal level with pattern.An other protective layer covers the semiconductor layer of above-mentioned P type conducting and the semiconductor layer of N type conducting, and exposes above-mentioned N electrode and P electrode.And above-mentioned heat dissipating layer connects the semiconductor layer of above-mentioned metal level with pattern or the conducting of N type to encapsulating carrier plate.
The present invention discloses a kind of manufacturing approach of side cooling LED in addition, the semiconductor layer that its step comprises provides a substrate, form a N type conducting on the substrate, form a luminescent layer on the semiconductor layer of N type conducting, the semiconductor layer that forms a P type conducting on the luminescent layer and the last heat dissipating layer that in encapsulation process, forms on the semiconductor layer of N type conducting.
In the step of above-mentioned manufacturing, comprised and formed a resilient coating between the semiconductor layer of above-mentioned substrate and the conducting of N type, and formed a unadulterated semiconductor layer between the semiconductor layer of resilient coating and the conducting of N type.Can form between the semiconductor layer of above-mentioned in addition unadulterated semiconductor and the conducting of N type one have a pattern metal level; Wherein above-mentioned its pattern of the metal level with pattern is a plurality of holes, and the semiconductor layer ohmic contact of above-mentioned metal level with pattern and the conducting of N type.
Hold above-mentioned steps; Wherein the semiconductor layer of semiconductor layer, luminescent layer and the conducting of N type of the P type conducting of a part is removed and makes the semiconductor layer of part N type conducting come out; And on the semiconductor layer of above-mentioned P type conducting, form a P electrode, form a N electrode simultaneously on the semiconductor layer of the part N type conducting that exposes or be formed on the metal level with pattern.Form a protective layer in addition and be covered in the semiconductor layer of above-mentioned P type conducting and the semiconductor layer of N type conducting, and expose outside above-mentioned N electrode and P electrode.And in encapsulation process, above-mentioned heat dissipating layer is formed on the semiconductor layer of above-mentioned metal level with pattern or the conducting of N type, and extend on the encapsulating carrier plate.
Above-mentioned substrate can be sapphire substrate, silicon carbide substrate, lithium aluminate substrate, lithium gallium oxide substrate, silicon substrate, gallium nitride base board, zinc oxide substrate, aluminum zinc oxide substrate, GaAs substrate, gallium phosphide substrate, gallium antimonide substrate, indium phosphide substrate, indium arsenide substrate, zinc selenide substrate or metal substrate.
Above-mentioned heat dissipating layer forms through thermal paste cooling after coagulation, and its material is that argent (Silver) mixes with epoxy resin (Epoxy).
Above-mentioned side cooling LED can be the light-emitting diode of III-V group-III nitride or the light-emitting diode of II-VI group-III nitride; Wherein luminescent layer can be the structure of single quantum well layer (single quantum well) or multiple quantum trap layer (multiple quantum layers); And (metalorganic chemical vapor deposition MOCVD) forms the semiconductor layer of the semiconductor layer of above-mentioned N type conducting, luminescent layer and the conducting of P type through Metalorganic chemical vapor deposition.
Above-mentioned resilient coating can be aluminium nitride (AlN), aluminum gallium nitride (AlGaN) or gallium nitride arsenic/gallium nitride arsenic (InGaN/InGaN).And above-mentioned unadulterated semiconductor layer is gallium nitride (GaN), and (metal organicchemical vapor deposition MOCVD) forms through Metalorganic chemical vapor deposition for wherein above-mentioned resilient coating and unadulterated semiconductor layer.
In above-mentioned step; Wherein the semiconductor layer of semiconductor layer, luminescent layer and the conducting of N type of the P type conducting of a part is removed and makes the semiconductor layer of part N type conducting come out, and utilizes optical lithography (photo lithography) and etched mode to accomplish.
Above-mentioned P electrode can be the material of nickel (Ni)/chromium (Cr)/gold (Au), platinum (Pt)/gold (Au), platinum (Pt)/nickel (Ni) gold (Au) or nickel (Ni)/Au-Zn; And the N electrode can be the material of nickel (Ni)/chromium (Cr)/gold (Au), chromium (Cr)/nickel (Ni)/gold (Au), titanium (Ti)/nickel (Ni)/chromium (Cr)/gold (Au) or gold (Au)/nickel (Ni)/titanium (Ti)/silicon (Si)/titanium (Ti); Wherein P electrode and N electrode utilize the mode of vapor deposition (Evoaporation) or sputter (Sputter) to form, and utilize optical lithography (photo lithography) and etched mode to accomplish shape again.
The material of the above-mentioned metal level with pattern can be chromium (Chromium) or tungsten (Tungsten); The wherein above-mentioned metal level with pattern utilizes the mode of vapor deposition (Evoaporation) or sputter (Sputter) to be formed on the above-mentioned unadulterated semiconductor layer, utilizes optical lithography (photo lithography) and etched mode to accomplish patterning again.
Above-mentioned protective layer can be silicon dioxide (SiO2), silicon nitride (Si3N4) or silicon oxynitride (SiON); Wherein protective layer utilizes chemical vapour deposition (CVD) (chemical vapor deposition; CVD) or plasma auxiliary chemical vapor deposition (plasma enhanced chemical vapor deposition, mode PECVD) forms.
Hereinafter will arrange in pairs or groups accompanying drawing and example specify technology contents of the present invention and each item embodiment.
Please with reference to shown in the structure schematic top plan view of the structural profile sketch map of Fig. 1 a and Fig. 1 b; The present invention discloses a side cooling LED 01, and it comprises semiconductor layer 11, a luminescent layer 12 of a substrate 10, a N type conducting, the semiconductor layer 13 and a heat dissipating layer 14 of a P type conducting.
Comprise a resilient coating 15 between the semiconductor layer 11 of above-mentioned substrate 10 and the conducting of N type, wherein had a unadulterated semiconductor layer 16 between the semiconductor layer 11 of resilient coating 15 and the conducting of N type in addition.
Above-mentioned luminescent layer 12 is between the semiconductor layer 13 of the semiconductor layer 11 of N type conducting and the conducting of P type, and aforesaid luminescent layer 12 can be the structure of single quantum well layer (single quantum well) or multiple quantum trap layer (multiple quantum layers).
Hold said structure, semiconductor layer 11 depressions of wherein semiconductor layer 13, luminescent layer 12 and the conducting of N type of the P type conducting of a part make the semiconductor layer 11 of part N type conducting come out separately.Has a P electrode 17 on the semiconductor layer 13 of above-mentioned in addition P type conducting, on the semiconductor layer 11 of the part N type conducting that other has a N electrode 18 to be positioned to expose.
An other protective layer 19 covers the semiconductor layer 13 of above-mentioned P type conducting and the semiconductor layer 11 of N type conducting, and exposes above-mentioned N electrode 18 and P electrode 17.
The semiconductor layer 11 that above-mentioned heat dissipating layer 14 connects above-mentioned N type conducting is to encapsulating carrier plate.
Please with reference to Fig. 2 a to Fig. 2 c, the manufacturing approach of the side cooling LED 01 that the present invention discloses, its manufacturing approach comprises the following step.
Then utilize optical lithography (photo lithography) and etched mode, the semiconductor layer 11 of semiconductor layer 13, luminescent layer 12 and the conducting of N type of the P type conducting of a feasible part is removed, and the semiconductor layer 11 of part N type conducting comes out.The present invention provides a preferred embodiment to accomplish above-mentioned steps through optical lithography (photo lithography) and etched mode, like step 1C.At first, apply a photoresist layer 7 on the semiconductor layer 13 of above-mentioned P type conducting, and a photo mask layer 6 is set, above photo mask layer 6, provide a light source 9 simultaneously towards photo mask layer 6 emission light in the top of aforementioned photic resist layer 7.
Step 1D, after photoresist layer 7 was receiving the irradiation of light, the part of its photoresist layer 7 exposure can be dissolved, and the opposite photo mask layer 6 that receives is covered the part that does not receive irradiate light and is then existed.
Above-mentioned photoresist layer 7 is positive photoresist, i.e. photoresist deliquescing or decomposition after the sensitization.The present invention provides another embodiment in addition, and wherein photoresist layer 7 is a negative photoresist, and promptly photoresist does not decompose after the sensitization.Therefore, being provided with of its photo mask layer 6 can be relative with step 1D, and do not receive photo mask layer 6 to cover and the part that receives irradiate light can exist.
Above-mentioned Wet-type etching (wet etching) is immersed in chip in the chemical solvent, or chemical solution quenched is sprayed on the chip, via solution and the chemical reaction that is etched thing to remove semiconductor layer.
In addition, dry ecthing comprises the mode of plasma etching (plasma etching), utilizes plasma that etching gas is dissociated and produces charged ion, molecule, electronics and hyperergic electronics group, makes that being removed thing forms volatile products.Also comprise the mode that splashes etching (sputter etching) in addition, utilize electric field, splash with the positron that derives acceleration and be etched thing the inert gas making alive.Moreover; Also comprise reactive ion etching (reactive ion etching; RIE) mode, the etching of rational ion bombardment of bond and chemical reaction, it mainly utilizes the etching of chemical reaction; Add the atomic bond knot destruction of the effect of ion bombardment again, with accelerated reaction speed with the etching material surface.Can destroy simultaneously being deposited on the polymer that is etched the thing surface again, be beneficial to etching and be able to continue carry out.
Step 1F removes photoresist layer 7, forms the nude film with extension platform (mesa).
Step 1G; Utilize the mode of vapor deposition (Evoaporation) or sputter (Sputter) to form metal level; Then utilize again optical lithography (photo lithography) and etched mode make the shape of P electrode 17 be formed at the conducting of P type semiconductor layer 13 on, and the shape of N electrode 18 be formed at the N type conducting that exposes semiconductor layer 11 on.
Step 1H; Utilize chemical vapour deposition (CVD) (chemical vapor deposition; CVD) or plasma auxiliary chemical vapor deposition (plasma enhanced chemical vapor deposition; PECVD) mode forms on the semiconductor layer 11 of semiconductor layer 13, luminescent layer 12 and the conducting of N type that protective layer 19 is covered in the conducting of aforesaid P type, and exposes N electrode 18 and P electrode 17.
Step 1I when the step of encapsulation, is coated with thermal paste and invests on the encapsulating carrier plate, and when nude film is positioned over when being coated with on the encapsulating carrier plate that has attached thermal paste, its thermal paste can extend to semiconductor layer 11 surfaces of the N type conducting that exposes along the nude film side.And when thermal paste is cooled off, just form a heat dissipating layer 14 in the semiconductor layer of the N type conducting that exposes 11 surfaces and extend on the encapsulating carrier plate.
Please with reference to shown in the structure schematic top plan view of the structural profile sketch map of Fig. 3 a and Fig. 3 b; The present invention discloses a kind of light-emitting diode 02 of side heat radiating type, and it comprises the semiconductor layer 21, a luminescent layer 22, the semiconductor layer 23 of a P type conducting, the metal level 5 that a heat dissipating layer 24 and has pattern of a substrate 20, a N type conducting.
Above-mentioned substrate 20 and have between the metal level 5 of pattern and comprised a resilient coating 25, wherein resilient coating 25 and have between the metal level 5 of pattern and have a unadulterated semiconductor layer 26 in addition.
Above-mentioned luminescent layer 22 is between the semiconductor layer 23 of the semiconductor layer 21 of N type conducting and the conducting of P type, and aforesaid luminescent layer 22 can be the structure of single quantum well layer (single quantum well) or multiple quantum trap layer (multiple quantum layers).
Hold said structure, semiconductor layer 21 depressions of wherein semiconductor layer 23, luminescent layer 22 and the conducting of N type of the P type conducting of a part make the semiconductor layer 21 of part N type conducting and the metal level 5 with pattern expose out.Have a P electrode 27 on the semiconductor layer 23 of above-mentioned in addition P type conducting, and on the semiconductor layer 21 of the part N type conducting that has a N electrode 28 to be positioned in addition to expose.
An other protective layer 29 covers the semiconductor layer 23 of above-mentioned P type conducting and the semiconductor layer 21 of N type conducting, and exposes above-mentioned N electrode 28 and P electrode 27.
Above-mentioned heat dissipating layer 24 connects the semiconductor layer 21 of above-mentioned N type conducting and extends on the encapsulating carrier plate.
Please with reference to the schematic diagram of fabrication technology of Fig. 4 a to Fig. 4 c, the present invention discloses a kind of manufacturing approach of side cooling LED 02, and its manufacturing approach comprises the following step.
Then utilize optical lithography (photo lithography) and etched mode, make above-mentioned metal level 5 produce patterning.The present invention provides a preferred embodiment to accomplish above-mentioned steps through optical lithography (photo lithography) and etched mode; Like step 2B; Apply a photoresist layer 71 on above-mentioned metal level 5; And a photo mask layer 61 is set in the top of aforementioned photic resist layer 71, above photo mask layer 61, provides a light source 91 simultaneously towards photo mask layer 61 emission light.
Above-mentioned photoresist layer 71 is positive photoresist, i.e. photoresist deliquescing or decomposition after the sensitization.The present invention provides another embodiment in addition, and wherein photoresist layer 71 is a negative photoresist, and promptly photoresist does not decompose after the sensitization.Therefore, being provided with of its photo mask layer 61 can be relative with step 2C, and do not receive photo mask layer 61 to cover and the part that receives irradiate light can exist.
Step 2I; Utilize chemical vapour deposition (CVD) (chemical vapor deposition; CVD) or plasma auxiliary chemical vapor deposition (plasma enhanced chemical vapor deposition; PECVD) mode forms on the semiconductor layer 21 of semiconductor layer 23, luminescent layer 22 and the conducting of N type that protective layer 29 is covered in the conducting of aforesaid P type, and exposes aforesaid N electrode 28 and P electrode 27.
Please with reference to shown in the structure schematic top plan view of the structural profile sketch map of Fig. 5 a and Fig. 5 b; The present invention discloses a kind of light-emitting diode 03 of side heat radiating type, and it comprises the semiconductor layer 31, a luminescent layer 32, the semiconductor layer 33 of a P type conducting, the metal level 8 that a heat dissipating layer 34 and has pattern of a substrate 30, a N type conducting.
Above-mentioned substrate 30 and have between the metal level 8 of pattern and comprised a resilient coating 35, wherein resilient coating 35 and have between the metal level 8 of pattern and have a unadulterated semiconductor layer 36 in addition.
Above-mentioned luminescent layer 32 is between the semiconductor layer 33 of the semiconductor layer 31 of N type conducting and the conducting of P type, and aforesaid luminescent layer 32 can be the structure of single quantum well layer (single quantum well) or multiple quantum trap layer (multiple quantum layers).
Hold said structure, semiconductor layer 31 depressions of wherein semiconductor layer 33, luminescent layer 32 and the conducting of N type of the P type conducting of a part, the metal level 8 that makes part have pattern exposes out.Have a P electrode 37 on the semiconductor layer 33 of above-mentioned in addition P type conducting, and have a N electrode 38 to be positioned at the metal level with pattern 8 that exposes in addition.
An other protective layer 39 covers the semiconductor layer 33 of above-mentioned P type conducting and the semiconductor layer 31 of N type conducting, and exposes above-mentioned N electrode 38 and P electrode 37.
Above-mentioned heat dissipating layer 34 connects the above-mentioned metal level with pattern 8 and extends on the encapsulating carrier plate.
In the structure of the light-emitting diode 03 of disclosed side heat radiating type; N electrode 38 is to be arranged on the metal level 8 with pattern; Be the metallic conduction material owing to have the metal level 8 of pattern; Therefore, this kind structure can make that luminescent layer 32 its electric currents distributions in the semiconductor are more even, can promote the luminous efficiency of the light-emitting diode 03 of side heat radiating type whereby.
Please with reference to the schematic diagram of fabrication technology of Fig. 6 a to Fig. 6 c, the present invention discloses a kind of manufacturing approach of side cooling LED 03, and its manufacturing approach comprises the following step.
Step 3A; One substrate 30 is provided; And form in regular turn the unadulterated semiconductor layer of a resilient coating 35, one 36, with a metal level 8 on above-mentioned substrate 30; (metal organic chemical vapordeposition MOCVD) forms, and the mode of above-mentioned metal level 8 through vapor deposition (Evoaporation) or sputter (Sputter) is formed on the unadulterated semiconductor layer 36 through Metalorganic chemical vapor deposition for wherein above-mentioned resilient coating 35 and unadulterated semiconductor layer 36.
Then utilize optical lithography (photo lithography) and etched mode, make above-mentioned metal level 8 produce patterning.The present invention provides a preferred embodiment to accomplish above-mentioned steps through optical lithography (photo lithography) and etched mode; Like step 3B; Apply a photoresist layer 72 on above-mentioned metal level 8; And a photo mask layer 62 is set in the top of aforementioned photic resist layer 72, above photo mask layer 62, provides a light source 92 simultaneously towards photo mask layer 62 emission light.
Step 3C, after photoresist layer 72 was receiving the irradiation of light, the part of its photoresist layer 72 exposure can be dissolved, and the opposite photo mask layer 62 that receives is covered the part that does not receive irradiate light and is then existed.
Above-mentioned photoresist layer 72 is positive photoresist, i.e. photoresist deliquescing or decomposition after the sensitization.The present invention provides another embodiment in addition, and wherein photoresist layer 72 is a negative photoresist, and promptly photoresist does not decompose after the sensitization.Therefore, being provided with of its photo mask layer 62 can be relative with step 3C, and do not receive photo mask layer 62 to cover and the part that receives irradiate light can exist.
Step 3I; Utilize chemical vapour deposition (CVD) (chemical vapor deposition; CVD) or plasma auxiliary chemical vapor deposition (plasma enhanced chemical vapor deposition; PECVD) mode forms on the semiconductor layer 31 of semiconductor layer 33, luminescent layer 32 and the conducting of N type that protective layer 39 is covered in the conducting of aforesaid P type, and exposes aforesaid N electrode 38 and P electrode 37.
In the material part, the substrate of above-mentioned side cooling LED can be sapphire substrate, silicon carbide substrate, lithium aluminate substrate, lithium gallium oxide substrate, silicon substrate, gallium nitride base board, zinc oxide substrate, aluminum zinc oxide substrate, GaAs substrate, gallium phosphide substrate, gallium antimonide substrate, indium phosphide substrate, indium arsenide substrate, zinc selenide substrate or metal substrate.
Above-mentioned side cooling LED can be the light-emitting diode of III-V group-III nitride or the light-emitting diode of II-VI group-III nitride, and wherein luminescent layer can be the structure of single quantum well layer (single quantum well) or multiple quantum trap layer (multiple quantum layers).
Above-mentioned heat dissipating layer forms through thermal paste cooling after coagulation, and its material is that argent (Silver) mixes with epoxy resin (Epoxy).
Above-mentioned resilient coating can be aluminium nitride (AlN), aluminum gallium nitride (AlGaN) or gallium nitride arsenic/gallium nitride arsenic (InGaN/InGaN), and above-mentioned unadulterated semiconductor layer is gallium nitride (GaN).
Above-mentioned P electrode and N electrode can be the high metal of electrical conductivity; Preferable material provided by the present invention is metallic copper (Copper); The material of the above-mentioned in addition metal level with pattern is a metal high temperature resistant and that conductive coefficient is high, can be chromium (Chromium) or tungsten (Tungsten).
Above-mentioned protective layer is a protective clear layer, and material can be silicon dioxide (SiO2), silicon nitride (Si3N4) or silicon oxynitride (SiON).
Please with reference to shown in Figure 7; When disclosed side cooling LED when luminous; The thermal source that its luminescent layer 42 is produced can conduct to heat dissipating layer 44 with 4 conduction of the metal level with pattern with thermal source via the semiconductor layer 41 of N type conducting; Heat dissipating layer 44 can be taken heat energy light emitting diode construction out of and conducted on the encapsulating carrier plate 40 this moment, and encapsulating carrier plate 40 can fit pin 43 be derived thermal source outside the package structure for LED simultaneously.
Disclosed side cooling LED conducts the luminescent layer thermal source through the above-mentioned metal level with pattern via side, and cooperates encapsulating structure that thermal source is derived outside the package structure for LED.This structure can be improved the light-emitting diode of traditional coplanar electrode must be by the shortcoming of the epitaxial substrate of conductive coefficient difference heat radiation.
Disclosed light-emitting diode, the cost that need not increase its manufacturing can improve the unfavorable problem of light-emitting diode heat extraction, and then provides high efficient LED that better luminous efficiency can be arranged.
Apparently, according to the description among the top embodiment, the present invention has many corrections and difference.Therefore need in the scope of its additional claim item, understand, except above-mentioned detailed description, the present invention can also implement in other embodiment widely.The above-mentioned the preferred embodiments of the present invention that are merely not are in order to limit claim of the present invention; All other do not break away from the equivalence of being accomplished under the disclosed spirit and changes or modification, all should be included in the accompanying claims.
Claims (4)
1. side cooling LED comprises:
One substrate;
The semiconductor layer of one N type conducting is positioned on this substrate;
One luminescent layer is positioned on the semiconductor layer of this N type conducting;
The semiconductor layer of one P type conducting is positioned on this luminescent layer; And
One heat dissipating layer connects on semiconductor layer to an encapsulating carrier plate of this N type conducting; Wherein the semiconductor layer of semiconductor layer, this luminescent layer and this N type conducting of the above-mentioned P type conducting of a part is removed, and makes the semiconductor layer of this N type conducting of part come out, and this side cooling LED also comprises:
One resilient coating is between the semiconductor layer of this substrate and this N type conducting;
One unadulterated semiconductor layer is between the semiconductor layer of this resilient coating and this N type conducting;
One has the metal level of a pattern, is positioned on this unadulterated semiconductor layer, and wherein this pattern is a plurality of holes;
One P electrode is positioned on the semiconductor layer of this P type conducting;
One N electrode is positioned on this metal level with this pattern, and the metal level ohmic contact of the semiconductor layer of this N type conducting and this pattern; And
One protective layer covers the semiconductor layer of this P type conducting and the semiconductor layer of this N type conducting, and exposes this N electrode and this P electrode.
2. according to the side cooling LED according to claim 1, wherein luminescent layer is the structure of single quantum well layer or multiple quantum trap layer.
3. the manufacturing approach of a side cooling LED, its step comprises:
One substrate is provided;
The semiconductor layer that forms a N type conducting is positioned on this substrate;
Form on the semiconductor layer that a luminescent layer is positioned at this N type conducting;
The semiconductor layer that forms a P type conducting is positioned on this luminescent layer; And
Form a heat dissipating layer, connect on semiconductor layer to an encapsulating carrier plate of this N type conducting;
Wherein utilize optical lithography and etched mode; The semiconductor layer of semiconductor layer, this luminescent layer and this N type conducting of the above-mentioned P type conducting of a part is removed; Make the semiconductor layer of this N type conducting of part come out, the manufacturing approach of this side cooling LED also comprises:
Form a resilient coating, between the semiconductor layer of this substrate and this N type conducting;
Form a unadulterated semiconductor layer, between the semiconductor layer of this resilient coating and this N type conducting;
Formation one has the metal level of a pattern, is positioned on this unadulterated semiconductor layer, and wherein this pattern is a plurality of holes;
Form a P electrode, be positioned on the semiconductor layer of this P type conducting;
Form a N electrode, be positioned on this metal level with this pattern, and the metal level ohmic contact of the semiconductor layer of this N type conducting and this pattern; And
Form a protective layer; Cover the semiconductor layer of this P type conducting and the semiconductor layer of this N type conducting; And expose this N electrode and this P electrode; Wherein this P electrode and this N electrode utilize the mode of vapor deposition or sputter to form, and utilize optical lithography and etched mode to accomplish shape again, and protective layer utilize the mode of chemical vapour deposition (CVD) to form.
4. according to the manufacturing approach of the side cooling LED of claim 3, wherein the semiconductor layer of the semiconductor layer of this N type conducting, this luminescent layer and this P type conducting forms through Metalorganic chemical vapor deposition.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910119568 CN101840970B (en) | 2009-03-16 | 2009-03-16 | Lateral cooling LED (Light-Emitting Diode) and manufacture method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910119568 CN101840970B (en) | 2009-03-16 | 2009-03-16 | Lateral cooling LED (Light-Emitting Diode) and manufacture method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101840970A CN101840970A (en) | 2010-09-22 |
| CN101840970B true CN101840970B (en) | 2012-01-25 |
Family
ID=42744225
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200910119568 Expired - Fee Related CN101840970B (en) | 2009-03-16 | 2009-03-16 | Lateral cooling LED (Light-Emitting Diode) and manufacture method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101840970B (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1265228A (en) * | 1997-07-25 | 2000-08-30 | 日亚化学工业株式会社 | Nitride semiconductor device |
| CN1344035A (en) * | 2000-09-18 | 2002-04-10 | 连勇科技股份有限公司 | Luminous compound semiconductor device and its preparing process |
-
2009
- 2009-03-16 CN CN 200910119568 patent/CN101840970B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1265228A (en) * | 1997-07-25 | 2000-08-30 | 日亚化学工业株式会社 | Nitride semiconductor device |
| CN1344035A (en) * | 2000-09-18 | 2002-04-10 | 连勇科技股份有限公司 | Luminous compound semiconductor device and its preparing process |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101840970A (en) | 2010-09-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20240128425A1 (en) | Solid state lighting devices with improved contacts and associated methods of manufacturing | |
| TWI407596B (en) | Lateral heat dissipation type led and fabrication method thereof | |
| US8470621B2 (en) | Method for fabricating a flip-chip semiconductor optoelectronic device | |
| US7064356B2 (en) | Flip chip light emitting diode with micromesas and a conductive mesh | |
| TWI473246B (en) | A chip level package of light-emitting diode | |
| KR100568269B1 (en) | GaN LED for flip-chip bonding and manufacturing method therefor | |
| US6781160B1 (en) | Semiconductor light emitting device and method for manufacturing the same | |
| US20060154393A1 (en) | Systems and methods for removing operating heat from a light emitting diode | |
| US9202985B2 (en) | Light emitting diode and forming method thereof | |
| US7875473B2 (en) | Method of manufacturing light emitting diode device | |
| MX2014005969A (en) | Micro light emitting diode. | |
| JP2007335879A (en) | Semiconductor light-emitting device including porous layer | |
| JP2003124407A (en) | Substrate for semiconductor structure having high thermal conductivity | |
| US20130048945A1 (en) | Light-emitting semiconductor structure and method for fabricating light-emitting diode device | |
| US20120074384A1 (en) | Protection for the epitaxial structure of metal devices | |
| JP2019522356A (en) | Method for using remote plasma chemical vapor deposition and sputtering deposition to grow layers in light emitting devices | |
| US10490701B2 (en) | Light emitting diode chip | |
| KR20100035846A (en) | Light emitting device and method for fabricating the same | |
| WO2016041471A1 (en) | Led vertical chip structure with special coarsening morphology and preparation method therefor | |
| US20210408351A1 (en) | Optoelectronic semiconductor component comprising first connection regions, and optoelectronic device | |
| US20100176404A1 (en) | Method for fabricating high-power light-emitting diode arrays | |
| KR100762003B1 (en) | Method of manufacturing vertically structured nitride type light emitting diode | |
| US20090134380A1 (en) | Solid-state lighting element | |
| KR20200087881A (en) | Method of forming a p-type layer for a light emitting device | |
| CN101840970B (en) | Lateral cooling LED (Light-Emitting Diode) and manufacture method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| ASS | Succession or assignment of patent right |
Owner name: RONGCHUANG ENERGY TECHNOLOGY CO., LTD. Owner name: ZHANJING TECHNOLOGY (SHENZHEN) CO., LTD. Free format text: FORMER OWNER: ADVANCED DEVELOPMENT PHOTOELECTRIC CO., LTD. Effective date: 20101122 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: HSINCHU COUNTY, TAIWAN PROVINCE, CHINA TO: 518100 NO. 2, E. RING ROAD 2, INDUSTRY ZONE 10, YOUSONG, LONGHUA SUBDISTRICT OFFICE, BAO AN DISTRICT, SHENZHEN CITY, GUANGDONG PROVINCE |
|
| TA01 | Transfer of patent application right |
Effective date of registration: 20101122 Address after: 518100, Shenzhen, Guangdong, Baoan District province Longhua Street tenth Pine Industrial Zone, No. two, East Ring Road, No. 2 Applicant after: Zhanjing Technology (Shenzhen) Co., Ltd. Co-applicant after: Advanced Optoelectronic Technology Inc. Address before: Hsinchu County, Taiwan, China Applicant before: Advanced Development Photoelectric Co., Ltd. |
|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120125 Termination date: 20150316 |
|
| EXPY | Termination of patent right or utility model |