CN101840941A - Iron-doped carbon thin-film material with photovoltaic and photoconductive effects and preparation method thereof - Google Patents
Iron-doped carbon thin-film material with photovoltaic and photoconductive effects and preparation method thereof Download PDFInfo
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- 239000000463 material Substances 0.000 title claims abstract description 60
- 239000010409 thin film Substances 0.000 title claims abstract description 45
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 41
- 229910052799 carbon Inorganic materials 0.000 title claims abstract description 41
- 230000000694 effects Effects 0.000 title claims abstract description 32
- 238000002360 preparation method Methods 0.000 title claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 14
- 238000004549 pulsed laser deposition Methods 0.000 claims abstract description 10
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 59
- 238000000151 deposition Methods 0.000 claims description 29
- 229910052742 iron Inorganic materials 0.000 claims description 16
- 238000004062 sedimentation Methods 0.000 claims description 16
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 14
- 239000011248 coating agent Substances 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 9
- 230000008021 deposition Effects 0.000 claims description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 claims description 4
- 238000001771 vacuum deposition Methods 0.000 claims description 4
- 238000012360 testing method Methods 0.000 abstract description 10
- 239000002360 explosive Substances 0.000 abstract description 4
- 229910052710 silicon Inorganic materials 0.000 abstract description 4
- 239000010703 silicon Substances 0.000 abstract description 4
- 239000000126 substance Substances 0.000 abstract description 3
- 231100000331 toxic Toxicity 0.000 abstract description 2
- 230000002588 toxic effect Effects 0.000 abstract description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 abstract 1
- 239000010408 film Substances 0.000 description 26
- 238000005516 engineering process Methods 0.000 description 5
- 238000005286 illumination Methods 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000007613 environmental effect Effects 0.000 description 3
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- 230000007096 poisonous effect Effects 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
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- 229910052751 metal Inorganic materials 0.000 description 2
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- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000004506 ultrasonic cleaning Methods 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 208000037656 Respiratory Sounds Diseases 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
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- 239000007792 gaseous phase Substances 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
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- 229920005591 polysilicon Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
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- 230000001172 regenerating effect Effects 0.000 description 1
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses an iron-doped carbon thin-film material with photovoltaic and photoconductive effects and a preparation method thereof, belonging to the technical field of thin-film solar cell and the photoelectric device which use the new energy. The iron-doped carbon thin-film material is prepared by arranging an aluminum oxide layer and an iron-doped carbon layer on an n-type Si (silicon) substrate with the pulsed laser deposition process without using any toxic, flammable and explosive substances during the preparation process. The iron-doped carbon thin-film material has excellent performances and low price and is the excellent material for the visible light sensor material and the potential photovoltaic device. When irradiated by a simulated sunlight source of 100 mW/cm2 (AM 1.5) in the room temperature, the photoelectric thin film can ensure that the device has the open-circuit voltage of 436 mV, the short-circuit current of 14 mA/cm2 and the fill factor of more than 33 percent. The photoelectric thin film has the photoconductive change value of more than 400 times under the condition that the test voltage is about 1 V.
Description
Technical field
The invention belongs to thin-film solar cells and photoelectric device material technology field in the new forms of energy, particularly have iron-doped carbon thin-film material of photovoltaic and photoconductive effect and preparation method thereof.
Background technology
Flourish along with modern industry, traditional fossil energy is constantly exhausted, and the environmental pollution that causes thus is also serious day by day.Therefore, how to utilize solar energy now to become the emphasis of countries in the world government energy research efficiently, the development of high-efficiency and low-cost solar cell is exactly one of important channel of solar energy utilization.Solar-energy photo-voltaic cell is the device that luminous energy is converted into electric energy by photoelectric effect.The operation principle of photovoltaic effect is: solar irradiation is tied the formation hole-electron pair at semiconductor P-N, and under P-N knot effect of electric field, the hole flows to the P district by the N district, and electronics flows to the N district by the P district, just forms electric current behind the connection circuit.By changing the connection in series-parallel form of PN junction, can obtain the output voltage of different numerical value; Can obtain different power outputs by the area that changes photovoltaic cell.Solar cell is a kind of regenerative resource of cleaning.Although account for the solar cell of main flow at present is monocrystalline silicon, polysilicon, non-crystal silicon solar cell, because complicated preparation technology and too high production cost have limited its extensive use in daily life.
In whole solar irradiation spectrum, visible light part probably accounts for 48%, wants to improve battery efficiency, and it is extremely important to make full use of in the sunlight light infrared and the near-infrared part, and this just needs the photovoltaic material of narrow band gap.The amorphous carbon film material is various because of its preparation method, and material cheaply is easy to get, structural material stability height, and advantage such as raw material resources is abundant and nontoxic, and the band gap adjustability is big becomes a kind of new material that might improve very much efficiency of solar cell.
In eighties of last century nineties, researchers have just begun the research of a-C/Si solar cell material, as H.Kiyoda, K.Okano (Fabrication of metal-insulator-semiconductor devices usingpolycrystalline diamond film, Jpn.J.Appl.Phys.30 (1991) L2015-L2017.), J.W.Glesener (A thin-film Schottky diode fabricated from flame-grown diamond, J.Appl.Phys.70 (1991) 5144-5146.) at first studies the direct film photovoltaic material that constitutes heterojunction structure with the weak p type and the n type silicon of amorphous carbon film.Many subsequently workers have launched the research to this type of material.As Mohamad Rusop, Tetsuo Soga, Takashi Jimbo (Solar Energy Materials ﹠amp; SolarCells 90 (2006) 3214-3222) reported the amorphous carbon film formation n-C:P/p-Si solar cell that on single crystalline Si, prepares phosphorus doping with plasma enhanced chemical vapor deposition method (PECVD).This battery open circuit voltage and short-circuit current density under the irradiation of a simulated sunlight reach 0.236V and 7.34mA/cm respectively
2Ashraf M.M.Omera_and Sudip Adhikari (APPLIED PHYSICS LETTERS87,2005 (161912)) reported the p-C:I/n-Si solar cell that on silicon base, prepares iodine doping amorphous carbon film with chemical gaseous phase depositing process (CVD), at AM1.5,100mW/cm
2Obtain 0.177V and 1.15mA/cm under the illumination
2Photovoltaic effect.And Jiecai Han, Manlin Tan, Jiaqi Zhu, and Songhe Meng (APPLIED PHYSICS LETTERS 90, (2007) 083508-083510) reported that open circuit voltage and short circuit current reach 0.236V and 7.337mA/cm with the n-C:B/p-Si solar cell of boron doping carbon film preparation
2
These carbon film materials with the gas phase process deposition, have used hydrocarbon gas or ammonia etc. in a large number, or have used toxic material mostly in the preparation process, thereby all very high to preparation technology's environmental requirement and safety requirements.And the amplitude to the response of light is still waiting further raising.High-quality thin film semiconductor joint solar cell also should satisfy following requirement simultaneously: 1, film surface smooth, continuous, do not have a crackle; 2, surface and interface free of pinholes, 3, pn knot face is enough smooth, and interface atom counterdiffusion need be inhibited.
Summary of the invention
The purpose of this invention is to provide iron-doped carbon thin-film material with photovoltaic and photoconductive effect and preparation method thereof.
Have the iron-doped carbon thin-film material of photovoltaic and photoconductive effect, it is characterized in that: on n type Si substrate, be provided with the carbon-coating of alumina layer and doping iron successively, form iron-doped carbon thin-film material with photovoltaic and photoconductive effect.
Have the preparation method of the iron-doped carbon thin-film material of photovoltaic and photoconductive effect, it is characterized in that: adopt the preparation of pulsed laser deposition method, n type Si substrate, Al
2O
3The vacuum coating that monocrystalline target, Fe target and high-purity C target are put into pulsed laser deposition equipment is indoor, vacuumizes at the bottom of with the back of the body in the coating chamber with mechanical pump and molecular pump, makes back of the body end vacuum maintain 5 * 10
-4Below the Pa, heated substrate is to depositing temperature: 300 ℃～500 ℃, under above-mentioned depositing temperature, bombard Al successively with the pulse that the KrF laser produces
2O
3Monocrystalline target, Fe target and high-purity C target, depositing Al successively on n type Si substrate
2O
3Layer, Fe layer and amorphous carbon layer, deposition maintains the 10min～30min that anneals on the depositing temperature with thin-film material after finishing, and allows the Fe atom diffusion to amorphous carbon layer, naturally cools to room temperature again, obtains having the iron-doped carbon thin-film material of photovoltaic and photoconductive effect.
Described Al
2O
3Layer sedimentation time is 3～4min, and described Fe layer sedimentation time is 5～6min, and described amorphous carbon layer sedimentation time is 15min.
Described Al
2O
3Monocrystalline target purity is 99.99%.
Described Fe target purity is 99.99%.
Described high-purity C target purity is 99.9%.
Beneficial effect of the present invention is:
1. this material has superior performance, and is cheap, is the photovoltaic device of a kind of excellent visible light sensor material and potentialization.In preparation process, do not use any poisonous flammable and explosive substance.The p-n junction face is smooth, and interface atom counterdiffusion is by thin layer Al
2O
3Be effectively suppressed.Preliminary result of study shows: this optoelectronic film is in room temperature, 100mW/cm
2Under the simulated solar light source irradiation of (AM 1.5), the open circuit voltage of device reaches 436mV, short circuit current is 14mA/cm
2, fill factor, curve factor is more than 33%.Simultaneously, when test voltage was condition about 1V, the photoconduction of film changed and can reach more than 400 times.
2. adopt the pulsed laser deposition method to prepare this film, method is simple, process stabilizing, and controllability is good, has higher preparation efficiency.And in film deposition process, material that need not be inflammable, explosive, poisonous, compliance with environmental protection requirements.
Description of drawings
Fig. 1 is embodiment's 1 (a-C:Fe)/Al
2O
3The schematic diagram of the structure of/Si iron-doped carbon thin-film material and photoconductive property test thereof;
Fig. 2 is embodiment 1 resulting (a-C:Fe)/Al
2O
3The room temperature I-V transmission characteristic of/Si iron-doped carbon thin-film material;
Fig. 3 is (a-C:Fe)/Al resulting under the different iron depositions
2O
3The room temperature I-V transmission characteristic of/Si iron-doped carbon thin-film material under illumination;
Fig. 4 is embodiment 1 resulting (a-C:Fe)/Al
2O
3The photoconductive changing value of the different test voltage correspondences of/Si iron-doped carbon thin-film material;
Number in the figure: 1, n type Si substrate; 2, Al
2O
3Layer; 3, the carbon-coating of doping iron; 4, metal electrode.
Embodiment
The invention will be further described below in conjunction with accompanying drawing:
(a-C:Fe)/Al with photovoltaic and photoconductive effect
2O
3/ Si iron-doped carbon thin-film material is provided with the carbon-coating 3 (a-C:Fe layer) of alumina layer 2 and doping iron successively on n type Si substrate 1, form the iron-doped carbon thin-film material with photovoltaic and photoconductive effect.
The iron-doped carbon thin-film material that adopts the preparation of pulsed laser deposition method to have photovoltaic and photoconductive effect, this method step is as follows: with n type Si (100) substrate, Al
2O
3The vacuum coating that monocrystalline target, Fe target and high-purity C target are put into pulsed laser deposition equipment is indoor, is evacuated to 5 * 10 with mechanical pump and molecular pump at the bottom of with the back of the body in the coating chamber
-4Behind the Pa, heated substrate is to depositing temperature: 400 ± 50 ℃, and under above-mentioned depositing temperature, the laser pulse bombardment Al that produces with KrF laser (Lambda Physics LPX205,248nm, 25ns FWHM)
2O
3The monocrystalline target, depositing Al
2O
3Layer film, pulsed laser energy is 360mJ, frequency is 1Hz, sedimentation time is 4min, adjust target afterwards, under same depositing temperature,, deposit the Fe layer film with bombardment Fe target, pulsed laser energy is 300mJ, frequency still is 1Hz, and sedimentation time is 5 minutes, adjusts target afterwards again, the high-purity C target of bombardment under same depositing temperature, the depositing amorphous carbon layer film, pulsed laser energy is 300mJ, pulse frequency is adjusted into 6Hz, sedimentation time is 15min, deposition maintains the 15min that anneals on the depositing temperature with thin-film material after finishing, and allows the Fe atom diffusion to amorphous carbon layer, naturally cool to room temperature again, obtain having the iron-doped carbon thin-film material of photovoltaic and photoconductive effect.
Described Al
2O
3Monocrystalline target purity is 99.99%, and described Fe target purity is 99.99%, and described high-purity C target purity is 99.9%.
Other technological parameters in the deposition process also comprise: target-substrate distance is about 50mm, and the bundle spot size of laser beam on target is about 2 * 2mm.The resistivity of used n type Si (100) substrate is 0.55-0.8 Ω cm in the experiment.Before the experiment, substrate is put into acetone and alcohol heating ultrasonic cleaning 2 to 3 times successively, every all over 5min-10min, carry out corrosion treatment with the HF acid solution that dilutes again.Prepared (a-C:Fe)/Al
2O
3The thickness of/Si film sample is measured by TEM (JEM-2011); Interfacial structure uses TEM (JEM-2011) to observe equally; The photoelectric properties test is measured by solar simulator (Oriel, 91192).
(the a-C:Fe)/Al of present embodiment preparation
2O
3/ Si iron-doped carbon thin-film material, its structure and photoelectric properties test schematic diagram thereof are as shown in Figure 1.Used metal electrode 4 is for pressing indium and forming ohmic contact.
In addition, also investigating difference mixes iron content (Fe layer sedimentation time is respectively 3min, 9min, 12min, all the other parameters are identical with present embodiment) and the room temperature I-V transmission characteristic of the carbon film material of present embodiment (Fe layer sedimentation time is 5min) preparation, the result as shown in Figure 3, Fig. 3 is different room temperature I-V transmission characteristics of mixing the iron content carbon film material, also is simultaneously that difference is mixed iron amount carbon film material at same light photograph (100mW/cm
2The simulated solar light source of (AM 1.5)) the photovoltaic effect response comparison diagram under.As can be seen, mixing iron content in the film has material impact to the photovoltaic performance of device, and photovoltaic effect is the most remarkable when the deposited iron film time is 5min, and open circuit voltage and short circuit current reach 436mV and 14.1mA/cm respectively
2The iron doping will directly influence the photovoltaic performance of device.
Fig. 2 for the iron-doped carbon thin-film material (Fe layer sedimentation time is 5min) of present embodiment preparation under the constant pressure source test condition, the photoconductive changing value of different test voltage correspondences.In test voltage is reverse bias during less than 1V, and dark condition down and 100mW/cm
2The ratio of the electric current that detects under the simulated solar illumination condition of (AM 1.5), that is the ratio of dark resistance and light resistance can reach more than 400 times.
Fig. 4 is resulting (the a-C:Fe)/Al of present embodiment
2O
3/ Si iron-doped carbon thin-film material (Fe layer sedimentation time is 5min) is at illumination (100mW/cm
2The simulated solar light source of (AM 1.5)) the photoconductive changing value under.As can be seen from the figure, its electricity is led variation and can be reached more than 200 times, greater than the photoconductive changing value of reporting on the document.
(a-C:Fe)/Al with photovoltaic and photoconductive effect
2O
3/ Si iron-doped carbon thin-film material is provided with the carbon-coating of alumina layer and doping iron successively on n type Si substrate, form the iron-doped carbon thin-film material with photovoltaic and photoconductive effect.
The iron-doped carbon thin-film material that adopts the preparation of pulsed laser deposition method to have photovoltaic and photoconductive effect, this method step is as follows: with n type Si (100) substrate, Al
2O
3The vacuum coating that monocrystalline target, Fe target and high-purity C target are put into pulsed laser deposition equipment is indoor, is evacuated to 5 * 10 with mechanical pump and molecular pump at the bottom of with the back of the body in the coating chamber
-4Behind the Pa, heated substrate is to depositing temperature: 450 ± 50 ℃, and under above-mentioned depositing temperature, the laser pulse bombardment Al that produces with KrF laser (Lambda Physics LPX205,248nm, 25ns FWHM)
2O
3The monocrystalline target, depositing Al
2O
3Layer film, pulsed laser energy is 360mJ, frequency is 1Hz, sedimentation time is 3min, adjust target afterwards, under same depositing temperature,, deposit the Fe layer film with bombardment Fe target, pulsed laser energy is 300mJ, frequency still is 1Hz, and sedimentation time is 6 minutes, adjusts target afterwards again, the high-purity C target of bombardment under same depositing temperature, the depositing amorphous carbon layer film, pulsed laser energy is 300mJ, pulse frequency is adjusted into 6Hz, sedimentation time is 15min, deposition maintains the 15min that anneals on the depositing temperature with thin-film material after finishing, and allows the Fe atom diffusion to amorphous carbon layer, naturally cool to room temperature again, obtain having the iron-doped carbon thin-film material of photovoltaic and photoconductive effect.
Described Al
2O
3Monocrystalline target purity is 99.99%, and described Fe target purity is 99.99%, and described high-purity C target purity is 99.9%.
Other technological parameters in the deposition process also comprise: target-substrate distance is about 50mm, and the bundle spot size of laser beam on target is about 2 * 2mm.The resistivity of used n type Si (100) substrate is 0.55-0.8 Ω cm in the experiment.Before the experiment, substrate is put into acetone and alcohol heating ultrasonic cleaning 2 to 3 times successively, every all over 5min-10min, carry out corrosion treatment with the HF acid solution that dilutes again.
(a-C:Fe)/Al that present embodiment is prepared
2O
3/ Si iron-doped carbon thin-film material, only need add less test reverse bias (＜1.0V) very sensitive photoconductive effect arranged promptly, dark condition is down and 100mW/cm
2The ratio that detects dark resistance and light resistance under the simulated solar illumination condition of (AM 1.5) reaches more than 400 times.From preparation technology's angle, the whole process of film preparation needn't be used inflammable, explosive, poisonous gas, compliance with environmental protection requirements.
Claims (6)
1. have the iron-doped carbon thin-film material of photovoltaic and photoconductive effect, it is characterized in that: on n type Si substrate, be provided with the carbon-coating of alumina layer and doping iron successively, form iron-doped carbon thin-film material with photovoltaic and photoconductive effect.
2. have the preparation method of the iron-doped carbon thin-film material of photovoltaic and photoconductive effect, it is characterized in that: adopt the preparation of pulsed laser deposition method, n type Si substrate, Al
2O
3The vacuum coating that monocrystalline target, Fe target and high-purity C target are put into pulsed laser deposition equipment is indoor, vacuumizes at the bottom of with the back of the body in the coating chamber with mechanical pump and molecular pump, makes back of the body end vacuum maintain 5 * 10
-4Below the Pa, heated substrate is to depositing temperature: 300 ℃～500 ℃, under above-mentioned depositing temperature, bombard Al successively with the pulse that the KrF laser produces
2O
3Monocrystalline target, Fe target and high-purity C target, depositing Al successively on n type Si substrate
2O
3Layer, Fe layer and amorphous carbon layer, deposition maintains the 10min～30min that anneals on the depositing temperature with thin-film material after finishing, and allows the Fe atom diffusion to amorphous carbon layer, naturally cools to room temperature again, obtains having the iron-doped carbon thin-film material of photovoltaic and photoconductive effect.
3. the preparation method with iron-doped carbon thin-film material of photovoltaic and photoconductive effect according to claim 2 is characterized in that: described Al
2O
3Layer sedimentation time is 3～4min, and described Fe layer sedimentation time is 5～6min, and described amorphous carbon layer sedimentation time is 15min.
4. the preparation method with iron-doped carbon thin-film material of photovoltaic and photoconductive effect according to claim 2 is characterized in that: described Al
2O
3Monocrystalline target purity is 99.99%.
5. the preparation method with iron-doped carbon thin-film material of photovoltaic and photoconductive effect according to claim 2 is characterized in that: described Fe target purity is 99.99%.
6. the preparation method with iron-doped carbon thin-film material of photovoltaic and photoconductive effect according to claim 2 is characterized in that: described high-purity C target purity is 99.9%.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102263143A (en) * | 2011-07-18 | 2011-11-30 | 清华大学 | Heterojunction film material having sunlight photovoltaic effect and preparation method thereof |
| CN102306677A (en) * | 2011-03-01 | 2012-01-04 | 友达光电股份有限公司 | Photovoltaic device with double junctions |
| CN105551934A (en) * | 2015-12-10 | 2016-05-04 | 三峡大学 | Method for preparing carbon silicon-based thin film material containing silicon quantum dots |
| CN106505046A (en) * | 2016-10-17 | 2017-03-15 | 中国石油大学(华东) | A kind of carbon aluminium carbon semiconductor film material with insulating substrate as substrate and preparation method thereof |
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| CN1421941A (en) * | 2003-01-09 | 2003-06-04 | 清华大学 | Fe-C film material with room temperature positive giant magnetoresistive effect and prepared via PLD process |
| CN1588662A (en) * | 2004-09-14 | 2005-03-02 | 清华大学 | FexCl-x/Fe/Si multilayer coating material with low field room temperature huge magnetic resistance effect |
| CN101359716A (en) * | 2008-09-28 | 2009-02-04 | 清华大学 | Co(x)C(1-x)/Co/Si multilayered structure granule film material having room temperature low field large magnetic resistance effect |
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Patent Citations (3)
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| CN1421941A (en) * | 2003-01-09 | 2003-06-04 | 清华大学 | Fe-C film material with room temperature positive giant magnetoresistive effect and prepared via PLD process |
| CN1588662A (en) * | 2004-09-14 | 2005-03-02 | 清华大学 | FexCl-x/Fe/Si multilayer coating material with low field room temperature huge magnetic resistance effect |
| CN101359716A (en) * | 2008-09-28 | 2009-02-04 | 清华大学 | Co(x)C(1-x)/Co/Si multilayered structure granule film material having room temperature low field large magnetic resistance effect |
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| 《APPLIED PHYSICS LETTERS》 20090714 Caihua Wan et al Photoconductivity of iron doped amorphous carbon films on n-type silicon substrates 022105-1至022105-3 , 第95期 2 * |
| 《Carbon》 20070518 P. Tian et al Enhanced room-temperature positive magnetoresistance of a-C:Fe film 1764-1768 , 第45期 2 * |
| 《Solar EnergyMaterials and SolarCells》 20090509 Hongwei Zhu et al Applications of carbon materials in photovoltaic solar cells 1461-1470 , 第93期 2 * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102306677A (en) * | 2011-03-01 | 2012-01-04 | 友达光电股份有限公司 | Photovoltaic device with double junctions |
| CN102263143A (en) * | 2011-07-18 | 2011-11-30 | 清华大学 | Heterojunction film material having sunlight photovoltaic effect and preparation method thereof |
| CN105551934A (en) * | 2015-12-10 | 2016-05-04 | 三峡大学 | Method for preparing carbon silicon-based thin film material containing silicon quantum dots |
| CN105551934B (en) * | 2015-12-10 | 2017-12-08 | 三峡大学 | A kind of siliceous quantum dot carbon silica-base film material preparation method |
| CN106505046A (en) * | 2016-10-17 | 2017-03-15 | 中国石油大学(华东) | A kind of carbon aluminium carbon semiconductor film material with insulating substrate as substrate and preparation method thereof |
| CN106505046B (en) * | 2016-10-17 | 2018-11-20 | 中国石油大学(华东) | It is a kind of using insulating substrate as carbon-aluminium-carbon semiconductor film material of substrate and preparation method thereof |
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| CN101840941B (en) | 2011-11-09 |
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