CN101838851A - Acid washing process of monocrystalline or polycrystalline silicon wafer - Google Patents
Acid washing process of monocrystalline or polycrystalline silicon wafer Download PDFInfo
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- CN101838851A CN101838851A CN 201010129782 CN201010129782A CN101838851A CN 101838851 A CN101838851 A CN 101838851A CN 201010129782 CN201010129782 CN 201010129782 CN 201010129782 A CN201010129782 A CN 201010129782A CN 101838851 A CN101838851 A CN 101838851A
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- monocrystalline
- hydrofluoric acid
- silicon wafer
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- water
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Abstract
The invention relates to an acid washing process of a monocrystalline or polycrystalline silicon wafer. In the process, a water tank is prepared and is connected with waste liquor treatment equipment, clear water is introduced into the water tank, the flow state of the clear water is kept, the monocrystalline or polycrystalline silicon wafer after ultrasonic alkali washing is completely immersed and suspended in the water tank, afterwards hydrofluoric acid is added into the water tank and is mixed with water, and a hydrofluoric acid solution the concentration of which is kept between 1 percent and 5 percent is formed, and contacts with the surface of the silicon wafer fully for carrying out flow type washing. By adopting the method, the use quantity of acid can be reduced and smaller acid mist is generated because a reactant is suspended at the liquid level and enters the waste liquor treatment equipment along with the flowing hydrofluoric acid solution together and the reaction is full and quick, which is beneficial to environmental protection and can achieve the aims of high washing speed and high washing quality.
Description
Technical field
The present invention relates to the acid cleaning process of a kind of monocrystalline or polysilicon chip.
Background technology
At present, in produce single crystal or polysilicon chip process, therefore the residual cutting liquid of its surface meeting, metal ion, oxide skin, other impurity etc. need clean.Usual method is to carry out ultrasonic alkali cleaning, pickling, ultrasonic rinsing, adopts convertible immersion process and acid cleaning process wherein is general, is about to the silicon material and enters to be immersed in the acid solution behind the cell body and clean as rotary movement.The large usage quantity of this method acid, can cause the silicon material than lossy, cleaning surfaces is not thorough yet, produces a large amount of acid steam fogs simultaneously, causes exhaust gas discharged too much, and outside atmosphere has also been produced certain influence.
Summary of the invention
The purpose of this invention is to provide the consumption that can reduce acid, a kind of monocrystalline that cleaning speed is fast, cleaning quality is high or the acid cleaning process of polysilicon chip.
The technical scheme that the present invention takes is: the acid cleaning process of a kind of monocrystalline or polysilicon chip, it is characterized in that preparing a tank, link to each other with waste liquor treatment equipment, feed clear water, make clear water keep flow state, will and be suspended in the tank, afterwards through monocrystalline after the ultrasonic alkali cleaning or the complete submergence of polysilicon chip, in tank, add hydrofluoric acid and mix the formation hydrofluoric acid solution, hydrofluoric acid solution and silicon chip surface are fully contacted carry out the flowing-type cleaning with water.
Described hydrofluoric acid solution concentration remains between 1～5%.
Adopt the inventive method; because reactant is suspended in liquid level along with the mobile hydrofluoric acid solution enters waste liquor treatment equipment together, and sufficient reacting, rapid, can reduce the consumption of acid and produce less acid mist; help environment protection, and can reach the purpose that cleaning speed is fast, cleaning quality is high.
Embodiment
The invention will be further described below in conjunction with specific embodiment.
1, utilizes the tank of a 50cm * 250cm, link to each other with waste liquor treatment equipment.
2, in tank, feed clear water, make clear water keep flow state.
3, put into monocrystalline or polysilicon chip in tank, submergence also is suspended in the water.
4, in water, add hydrofluoric acid (HF), the concentration of hydrofluoric acid (HF) solution is remained between 1～5%.
5, make monocrystalline or polysilicon chip in hydrofluoric acid (HF) solution, keep certain hour, afterwards, take out monocrystalline or polysilicon chip and get final product.
According to above-mentioned, because the proportion of water is 1, the density of hydrofluoric acid (HF) is 1.15～1.18, the density of silicon is 2.33, therefore, hydrofluoric acid (HF) can flow with the water thorough mixing and in tank, can fully contact with each surface of monocrystalline or polysilicon chip, with quartzy fully reaction attached to silicon face, generate liquid water and gasiform silicon tetrafluoride, silicon tetrafluoride enters waste gas treatment equipment and handles, and adhere to heavily doped with the P type after production separates and other impurity under the effect of acid, all become some little sheets and granular water-fast material, its gravity is less than the buoyancy of acid solution, the impurity that these reactions generate is suspended in the acid solution surface all, flows in the waste liquor treatment equipment in the lump.
Because hydrofluoric acid (HF) can flow with the water thorough mixing and in tank; can fully contact with each surface of monocrystalline or polysilicon chip; and make reactant along with the mobile acid solution enters waste liquor treatment equipment together; therefore; react completely, fully, rapidly, can improve the surface clearness of monocrystalline or polysilicon chip, can reduce the consumption of acid and produce less acid mist; reduce cost, help environment protection.
Claims (2)
1. the acid cleaning process of monocrystalline or polysilicon chip, it is characterized in that preparing a tank, link to each other with waste liquor treatment equipment, feed clear water, make clear water keep flow state, will and be suspended in the tank, afterwards through monocrystalline after the ultrasonic alkali cleaning or the complete submergence of polysilicon chip, in tank, add hydrofluoric acid and mix the formation hydrofluoric acid solution, hydrofluoric acid solution and silicon chip surface are fully contacted carry out the flowing-type cleaning with water.
2. the acid cleaning process of described a kind of monocrystalline according to claim 1 or polysilicon chip is characterized in that hydrofluoric acid solution concentration remains between 1～5%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010129782 CN101838851A (en) | 2010-03-22 | 2010-03-22 | Acid washing process of monocrystalline or polycrystalline silicon wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010129782 CN101838851A (en) | 2010-03-22 | 2010-03-22 | Acid washing process of monocrystalline or polycrystalline silicon wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101838851A true CN101838851A (en) | 2010-09-22 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201010129782 Pending CN101838851A (en) | 2010-03-22 | 2010-03-22 | Acid washing process of monocrystalline or polycrystalline silicon wafer |
Country Status (1)
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| CN (1) | CN101838851A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102757051A (en) * | 2012-04-19 | 2012-10-31 | 镇江环太硅科技有限公司 | Method for performing recovery treatment on waste layer silicon material |
| CN103086555A (en) * | 2011-10-31 | 2013-05-08 | 库特勒自动化系统(苏州)有限公司 | Treatment system and treatment method for silicon wafer etching waste water |
| CN109860040A (en) * | 2019-01-30 | 2019-06-07 | 西安奕斯伟硅片技术有限公司 | Silicon etch process, silico briquette, pulling of crystals method of pulling up and monocrystalline |
| CN111354662A (en) * | 2020-03-10 | 2020-06-30 | 南通欧贝黎新能源电力股份有限公司 | Pickling device for removing phosphorus and silicon glass from silicon wafer for preparing solar cell |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1967788A (en) * | 2005-11-17 | 2007-05-23 | 上海华虹Nec电子有限公司 | Cleanout method after tungsten CMP |
| CN101211774A (en) * | 2006-12-29 | 2008-07-02 | 斯尔瑞恩公司 | Method for cleaning silicon wafer |
-
2010
- 2010-03-22 CN CN 201010129782 patent/CN101838851A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1967788A (en) * | 2005-11-17 | 2007-05-23 | 上海华虹Nec电子有限公司 | Cleanout method after tungsten CMP |
| CN101211774A (en) * | 2006-12-29 | 2008-07-02 | 斯尔瑞恩公司 | Method for cleaning silicon wafer |
Non-Patent Citations (1)
| Title |
|---|
| 《半导体技术》 20020331 曹宝成 等 氢氟酸在新型清洗工艺中的作用 第23-25页 1，2 第27卷, 第3期 2 * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103086555A (en) * | 2011-10-31 | 2013-05-08 | 库特勒自动化系统(苏州)有限公司 | Treatment system and treatment method for silicon wafer etching waste water |
| CN102757051A (en) * | 2012-04-19 | 2012-10-31 | 镇江环太硅科技有限公司 | Method for performing recovery treatment on waste layer silicon material |
| CN109860040A (en) * | 2019-01-30 | 2019-06-07 | 西安奕斯伟硅片技术有限公司 | Silicon etch process, silico briquette, pulling of crystals method of pulling up and monocrystalline |
| CN109860040B (en) * | 2019-01-30 | 2022-02-01 | 西安奕斯伟材料科技有限公司 | Silicon etching method, silicon ingot, pulling method of Czochralski single crystal, and single crystal |
| CN111354662A (en) * | 2020-03-10 | 2020-06-30 | 南通欧贝黎新能源电力股份有限公司 | Pickling device for removing phosphorus and silicon glass from silicon wafer for preparing solar cell |
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| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
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Application publication date: 20100922 |