CN101838840A - Self-assembly growth pool and self-assembly growth control system - Google Patents
Self-assembly growth pool and self-assembly growth control system Download PDFInfo
- Publication number
- CN101838840A CN101838840A CN200910080543A CN200910080543A CN101838840A CN 101838840 A CN101838840 A CN 101838840A CN 200910080543 A CN200910080543 A CN 200910080543A CN 200910080543 A CN200910080543 A CN 200910080543A CN 101838840 A CN101838840 A CN 101838840A
- Authority
- CN
- China
- Prior art keywords
- self
- assembled growth
- pond
- temperature
- pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Measuring Fluid Pressure (AREA)
Abstract
The invention provides a self-assembly growth pool and a self-assembly growth control system. The control system comprises a self-assembly growth pool, a temperature control module and a pressure control module, wherein the temperature control module comprises a temperature sensor, a temperature control circuit and a semiconductor refrigeration plate; the pressure control module comprises an absolute pressure sensor, a pressure control circuit and a piezoelectric valve; the temperature sensor is arranged at the leading edge of the self-assembly growth pool near crystal growth; the semiconductor refrigeration plate is arranged on the side or at the bottom of the self-assembly growth pool; the temperature control circuit is connected between the temperature sensor and the semiconductor refrigeration plate and used for controlling the temperature of the self-assembly growth pool; the absolute pressure sensor and the piezoelectric valve are arranged on the self-assembly growth pool; and the pressure control circuit is arranged between the absolute pressure sensor and the piezoelectric valve and used for controlling the pressure of the self-assembly growth pool. The system has the advantages of easy control, simple operation, high quality of samples, and high repeatability.
Description
Technical field
The present invention relates to crystal growth control techniques field, more specifically, the present invention relates to the Controlling System of a kind of self-assembled growth pond and self-assembled growth.
Background technology
Self-assembly be meant between the molecule or between the nanoparticle by the interaction of non covalent bond, carry out self-assembly and realize a kind of process of the regular texture on the different scale.
Self-assembling technique is simple and easy to do, is solvent usually with water, and deposition process and structure are controlled in component units yardstick level.Can the successive sedimentation different components, two dimension even three-dimensional orderly structure between the preparation rete realize the character such as special light, electricity, magnetic of material, even also can simulate microbial film.
In the colloid field, as far back as 1999, people just begin self-assembly and prepare high-quality colloidal crystal (document 1:P.Jiang etc., Single-Crystal Colloidal Multilayers of Controlled Thickness, Chem.Mater., volume was 2132 pages in 1999 the 11st), compare with other self-assembling methods, the crystal mass and the preparation technology of its preparation are improved.It is under certain temperature and humidity condition, substrate is vertically inserted in the suspension liquid of single dispersion colloid particle, utilize on the substrate wetting film place's solvent evaporation inductive liquid stream to take colloidal solid to on-chip meniscus place and be arranged in orderly close-packed structure, thereby be self-assembled into colloid crystal film.But, being subjected to the restriction of colloidal solid particle diameter, growth time is long.(document 2:Z.Y.Zheng et etc. in 2007, Pressure Controlled Self-assembly of High Quality Three-dimensional Colloidal Photonic Crystals, Appl.Phys.Lett., volume was 051910 page in 2007 the 90th) a kind of method proposed, traditional vertical deposition method is improved, developed pressure control isothermal vertical-growth method (being also referred to as two-parameter self-assembly method), by being connected in the vacuum system of growth deposition bottle, reduce the interior gas pressure intensity of experimental system of growing three-dimensional photon crystal film.On the one hand, utilized and reduced the principle that pressure can reduce boiling point of liquid, simultaneously the growth system is vacuumized to reduce pressure at homothermic, make such as organic materials such as the polystyrene sphere aqueous solution or the boiling point lowering of particulate colloidal solution with life active compound to the temperature of colloidal solid pattern and character not being had influence, can be the time near this boiling temperature the self-assembled growth colloid crystal film, avoided colloidal solid because the deformation that high temperature produces, adhesion or character change, thereby guarantee to obtain high performance colloidal photon crystal.On the other hand, because the gas pressure intensity in the self-assembled growth system reduces greatly, quickened the velocity of evaporation of fluid surface, make liquid internal form continual and steady convection current fast, help keeping the dispersiveness of colloidal solid in solvent, it is too fast and destroy crystal mass even the problem that it can not be grown also to have overcome in the process of growth the excessive particles settling that causes of particle diameter effectively.
The quality of colloidal photon crystal mainly is subjected to growth front place liquid surface evaporation, microballoon by the influence of processes such as convection current liquid transport and colloid crystallization (transport and the colloid crystallisation process of microballoon are mainly determined by liquid surface evaporation), when this three is in running balance, microballoon is just understood the structure that self-assembly is a high-sequential, grows high-quality colloidal photon crystal.Pressure and control accuracy of temperature directly influence the liquid evaporation speed at colloidal crystal when growth growth front place in the above-mentioned two-parameter self-assembly method, influence the homogeneity of colloidal crystal of self-assembled growth and the formation of defective, have promptly determined the sample quality that obtains; In addition, in the self-assembled growth process, the stability of pressure and temperature is the direct guarantee of high quality sample productive rate.As seen, in the self assembling process pressure and temperature controlling accurately and stability all most important to self-assembled growth.But in the experiment of disclosed various self-assembled growths, experiment condition all is to control with simple device, and the control accuracy of temperature and pressure and stability are all lower.
Summary of the invention
For overcoming pressure and the low defective of temperature control precision in the existing self-assembled growth technology, the present invention proposes the Controlling System of a kind of self-assembled growth pond and self-assembled growth.
According to an aspect of the present invention, provide a kind of self-assembled growth pond, having comprised:
By the high metal shell of thermal conductivity;
Glass inner bag;
Wherein, described glass inner bag contacts with temperature sensor, and the internal medium in described self-assembled growth pond links to each other with the absolute pressure sensor of outside, described self-assembled growth pond.
Wherein, described glass inner bag and described shell tight joint.
Wherein, insert the good tinsel of thermal conductivity between described glass inner bag and the described shell.
According to another aspect of the present invention, provide a kind of self-assembled growth Controlling System, having comprised:
Self-assembled growth pond, temperature control modules and pressure control module;
Wherein, described temperature control modules comprises temperature sensor, temperature-control circuit and semiconductor chilling plate; Described pressure control module comprises absolute pressure sensor, pressure pilot circuit and piezo electric valve;
Described temperature sensor is arranged in the forward position of the close crystal growth in described self-assembled growth pond, described semiconductor chilling plate is arranged in the side or the bottom in described self-assembled growth pond, described temperature-control circuit is connected between described temperature sensor and the described semiconductor chilling plate, is used to control the temperature in described self-assembled growth pond;
Described absolute pressure sensor and piezo electric valve are arranged on the described self-assembled growth pond, and described pressure pilot circuit is arranged between described absolute pressure sensor and the piezo electric valve, is used to control the pressure in described self-assembled growth pond;
The shell in described self-assembled growth pond is made by the high metal of thermal conductivity, and inside is glass inner bag, and described temperature sensor contacts with described glass inner bag, and described absolute pressure sensor links to each other with described self-assembled growth pond is inner.
Wherein, described glass inner bag and described shell tight joint.
Wherein, insert the good tinsel of thermal conductivity between described glass inner bag and the described shell.
Wherein, described temperature sensor is used for temperature survey is carried out in described self-assembled growth pond, and described semiconductor chilling plate is used for according to the signal that receives described self-assembled growth pond refrigeration or heating.
Wherein, described temperature-control circuit comprises measures comparison circuit and current amplification circuit, described measurement comparison circuit is used to receive the temperature voltage signal in the described self-assembled growth pond that described temperature sensor provides, and compares with the votage reference of setting, and obtains compensation voltage signal; Described current amplification circuit is used for described compensation voltage signal is amplified, and offers described semiconductor chilling plate.
Wherein, described absolute pressure sensor is used for measuring the gas pounds per square inch absolute (psia) in described self-assembled growth pond, offers described pressure pilot circuit; Described piezo electric valve is used for the output signal according to described pressure pilot circuit, regulates charge flow rate, and gas pressure intensity in the growth pond is controlled.
Wherein, described pressure pilot circuit comprises the measurement comparison circuit, PID amplifying circuit and high pressure amplifying circuit; Described measurement comparison circuit receives the pressure signal in the described self-assembled growth pond that described absolute pressure sensor provides, and make differential ratio with setting voltage value, the output differential signal is given the PID amplifying circuit, described PID amplifying circuit amplifies the differential signal that is received and offers described high pressure amplifying circuit, described high pressure amplifying circuit is used for that the signal that is received is carried out high pressure and amplifies, and offers described piezo electric valve.
The present invention is by accurate Controlling System, accurately control temperature and pressure in the self assembling process, improve the self-assembled growth colloidal crystal quality of existing method and the repeatability of experiment, thereby a kind of high-level efficiency be provided, be easy to control, simple to operate, sample quality is high, the precise control system of the self-assembled growth of good reproducibility, specifically:
1, by designing control of continuous hot type temperature and small volume and having good heat conductivity growth pond, temperature (temperature control precision is 0.01 ℃) and amplify in the control growing pond accurately by precision measurement comparison, PID feedback, high pressure, the open amount of fine setting successive type piezo electric valve, accurately regulate gas total pressure in the growth system (the pressure control accuracy is 0.01kPa), and with existing thermostat temperature precision only to 1 ℃, system gas pressure maximum drift reaches 5kPa/h! during existing needle-valve manual regulation pressure As seen, temperature control precision and pressure control accuracy have all improved two orders of magnitude.
2, by using system of the present invention, in the colloidal crystal process of growth, accurately, liquid evaporation speed and the particle of stably having controlled place, crystal growth forward position transports speed, make self-assembled growth reach optimal experimental conditions easily, grow big area, structure height in order, microcosmic and the few colloidal crystal of macroscopic defects, improve the quality of the colloidal crystal of growth greatly.
3, by using system of the present invention, the precision of self assembling process, automatic control have stably improved the productive rate of high quality colloidal crystal greatly.
4, Controlling System of the present invention is simple in structure, and cost is low, and processing and manufacturing is easy, is easy to integratedly, easy to use, reliable, and debugging is convenient.
Description of drawings
Fig. 1 is the block diagram of self-assembled growth Controlling System according to an embodiment of the invention;
Fig. 2 is a self-assembled growth pond sectional view according to an embodiment of the invention;
Fig. 3 is a temperature-control circuit block diagram according to an embodiment of the invention;
Fig. 4 is the illustrative diagram of temperature-control circuit shown in Figure 3;
Fig. 5 is a pressure pilot circuit block diagram according to an embodiment of the invention;
Fig. 6 is the illustrative diagram of pressure pilot circuit shown in Figure 5.
Embodiment
Be described in detail below in conjunction with the Controlling System of the drawings and specific embodiments a kind of self-assembled growth pond provided by the invention and self-assembled growth.
It at the application number that same applicant submitted on September 21st, 2005 experimental installation of having described decompression isothermal self-assembly method in 200510086449.5 " a kind of method of growing three-dimensional photon crystal film by pressure-reducing self-assembling and device ", though the precision of its temperature and pressure control is lower, its full content comprises in the present invention by reference at this.
Fig. 1 illustrates the formation block diagram according to the self-assembled growth Controlling System of the embodiment of the invention, and this Controlling System comprises growth pond, temperature control modules and pressure control module.This system can also comprise vacuum pump and surge flask, and wherein, vacuum pump and surge flask are existing apparatus, for system provides certain vacuum environment; The pressure control module comprises absolute pressure sensor, pressure pilot circuit and piezo electric valve, and wherein, the pressure pilot circuit comprises measures comparison circuit, PID amplifying circuit and high pressure amplifying circuit; Temperature control modules comprises temperature sensor, temperature-control circuit and semiconductor chilling plate.
As shown in Figure 1, self-assembled growth pond (being called for short the growth pond) is gone up near near the crystal growth forward position high-precision temperature sensor is housed, semiconductor chilling plate is equipped with in growth outside, pond, and temperature sensor is connected by temperature-control circuit with cooling piece, and this part is used for carrying out temperature control; The top in self-assembled growth pond links to each other by port of rubber valve tube and gas buffer bottle, and the another port of surge flask is connected to vacuum pump; Growth top, pond connects absolute pressure sensor and at side arrangement piezoelectric ceramic valve (abbreviation piezo electric valve), is furnished with between absolute pressure sensor and the piezo electric valve and measures comparison circuit, PID amplifying circuit, high pressure amplifying circuit, and this part is used for pressure control.In another embodiment, semiconductor chilling plate also can be arranged in a side in growth pond or arrange that around the growth pond piezo electric valve can be arranged in the bottom in growth pond simultaneously.
The gas buffer bottle is used for playing shock absorption in gas circuit, prevents that extraneous factor from causing the sudden change of growth pool gas pressure; Vacuum pump vacuumizes system, give in the growing system certain vacuum tightness is provided, system can be regulated on this basis, vacuum pump can be recirculated water vacuum pump or other various types of vacuum pumps, when vacuum pump has special restriction to water, can on gas circuit, add devices such as drying tower or absorption tower.
Fig. 2 is the sectional view in self-assembled growth pond.As shown in Figure 2, growth pond shell is made by the higher metal of thermal conductivity (for example brass or aluminium), its concrete shape and size are according to the design of experiment needs, inside is glass inner bag, glass inner bag more closely engages with outer metallic shell, also can insert thermal conductivity preferred metal paper tinsel in their gaps, be beneficial to thermal conduction, be the experimental situation of self-assembled growth in the glass inner bag.The interface that the growth pond covers forms gas circuit by rubber valve tube and surge flask and is connected.Temperature sensor sees through metal shell and contacts with glass inner bag, and absolute pressure sensor links to each other with the growth pond is inner with the interface that piezo electric valve sees through on the growth pond.The bottom in growth pond is furnished with semiconductor chilling plate.
Fig. 3 is a temperature-control circuit block diagram according to an embodiment of the invention.Described temperature-control circuit comprises measures comparison circuit and current amplification circuit.The temperature voltage signal in the growth pond that measurement comparison circuit reception temperature sensor provides, compare with the votage reference of setting, be compensated voltage signal, and send into current amplification circuit, current amplification circuit amplifies compensation voltage signal, supplies with power element-semiconductor chilling plate.
Temperature sensor is accurate semiconductor temperature sensor (for example LM35, LM335 etc.) commonly used, is used for temperature survey is carried out in the growth pond, and this temperature sensor precision height, drift is low, the linear lag good; The limiting power of the semiconductor chilling plate that is adopted is bigger, and the two sides temperature difference can be higher, and intensification and cooling are very fast, both can be used to heating, also can freeze; Temperature-control circuit adopts continuous type of heating but not switch type of heating controlled temperature, responds soon during adjusting, and overshoot is less, and accuracy of temperature control is very high.
Fig. 4 is an illustrative diagram of temperature-control circuit shown in Figure 3.As shown in Figure 4, resistance R 1 and voltage reference diode D1 (temperature compensated voltage reference, LM329 for example) provides the votage reference of comparison, resistance R 2, R3, corresponding voltage value when the R6 design temperature is stablized, temperature sensor D2 (as the voltage-type temperature sensor LM335 of precision) provide biasing by resistance R 4, operational amplifier IC1 (can adopt common operational amplifier, also can adopt precision operational-amplifier such as OP07 or OP77) magnitude of voltage of C.T. setting point and the output voltage values of temperature sensor and amplification, transistor NPN1 and resistance R 7 are carried out the electric current first step and are amplified, transistor NPN2 carries out the electric current second stage and amplifies, and institute's amplified current offers semiconductor chilling plate.
During temperature variation, the temperature sensor output signal of voltage signal being provided for operational amplifier IC1 end of oppisite phase changes, and makes comparisons voltage signal difference Δ V by the magnitude of voltage of IC1 and C.T. setting point in the growth pond
tBe amplified to V
s, the outward current of transistor NPN1 and 7 couples of IC1 of resistance R carries out the first step and is amplified to I
1=β
1V
s/ R
5(β
1+ 1), transistor NPN2 carries out the electric current second stage and is amplified to outward current I
2=β
1β
2V
s/ R
5(β
1+ 1), this outward current that is exaggerated offers semiconductor chilling plate and makes its two sides difference variation, thereby carries out temperature regulation (β wherein
1, β
2Be respectively two transistorized current ampliication factors), because the gain of operational amplifier is very big, the minimum difference of sensor output voltage that temperature variation causes and setting voltage also can be exaggerated, cause the adjustment of outward current, thereby carry out suitable temperature adjustment, adjust until enough little just the stopping of the temperature of the transmitter impression temperature head corresponding with set-point voltage.
Fig. 5 is a pressure pilot circuit block diagram according to an embodiment of the invention.As shown in Figure 5, the pressure pilot circuit comprises measures comparison circuit, PID amplifying circuit and high pressure amplifying circuit, and this pressure pilot circuit can also comprise overvoltage crowbar.The pressure signal in the growth pond that measurement comparison circuit reception absolute pressure sensor provides, output signal offers the PID amplifying circuit, offer the high pressure amplifying circuit through PID amplifying circuit amplifying signal and carry out the high pressure amplification, last output signal passes to the opening degree of piezo electric valve control piezo electric valve, thereby regulates pressure automatically.Overvoltage crowbar can be weighed the high pressure amplifying signal of output, can not work the mischief to piezo electric valve with definite.
Absolute pressure sensor is measured gas pounds per square inch absolute (psia) in the growth pond, adopts the pressure-active element of silicon materials, and is highly sensitive, precision height, linear lag height; Piezoelectric ceramic valve is controlled gas pressure intensity in the growth pond by regulating charge flow rate automatically according to the output signal of control loop mesohigh amplifier, and piezo electric valve is regulated accurately, and regulation range is wide, and response is fast; Measure comparison circuit and be used for the absolute pressure sensor output signal is amplified, and make differential ratio (set(ting)value is determined by concrete requirement of experiment) with the setting voltage value of its initialization circuit output; The PID amplifying circuit amplifies the differential signal that receives, and can play the amplification regulating effect more accurately and efficiently; The high pressure amplifying circuit carries out high pressure to the output signal of PID amplifier and amplifies, to drive piezo electric valve with gas pressure intensity in the regulation system.
Fig. 6 is the illustrative diagram of pressure pilot circuit shown in Figure 5.As shown in Figure 6, resistance R 1, voltage stabilizing tube D1, operational amplifier IC1, resistance R 6, R32 forms constant current source, the power supply of constant current mode is provided for the absolute pressure sensor of the bridge type structure of pressure sensitive, instrument amplifier IC9, RG1, RS1 constitutes the instrument amplifying circuit, resistance R 5, R29, snubber IC3 constitutes initialization circuit, the voltage of setting the pressure correspondence is set, resistance R 7, R8, R9, R10, operational amplifier IC4 constitutes differential amplifier, the output signal of instrument amplifier and the output signal of snubber are done the difference amplification, and this part constitutes measures comparison circuit; The proportional amplifier that constitutes by resistance R 2, R3, R4, operational amplifier IC2, the integrator that constitutes by resistance R 11, R12, capacitor C 1, switch S 1, operational amplifier IC5, the differentiator that constitutes by capacitor C 2, resistance R 13, R22, operational amplifier IC8, the biasing voltage signal that the voltage-divider that potentiometer R30 constitutes provides, resistance R 14, R15, R16, R17, R19, R18, operational amplifier IC6 constitute totalizer, and this part constitutes PI D amplifier; By operational amplifier IC7; resistance R 21; R28; R25; R26; R31; R27; high pressure field effect transistor MOSFET1; MOSFET2; transistor NPN1; diode D5; capacitor C 3; the high-voltage amplifier that C4 constitutes; by power resistor R24; diode D4; the clamper superpotential first class of protection circuit that voltage stabilizing tube D3 constitutes; by safety fuse FUSE1; R20; voltage stabilizing tube D2; power monitoring chip IC10 is (as MC3425; when adopting other power monitoring chip; wiring should change with encapsulation); the superpotential second class protection circuit that controllable silicon SCR 1 constitutes, this part constitutes high-voltage amplifier.
Absolute pressure sensor is powered by measuring comparison circuit, when gas pressure intensity changes in the growth pond, and signal of sensor V
pOffer instrument amplifier IC9 and be amplified to V
1=G
IV
p, the snubber IC3 output voltage V of output signal and pressure initialization circuit
2Carry out difference at differential amplifier IC4 and be amplified to V
3=(V
2-G
IV
p) R
9/ R
7, its output signal offers the PID amplifying circuit, Fen Sanlu offers proportional amplifier, integrator, differentiator, signal through this three the tunnel amplify respectively and with biasing voltage signal V
bAdded together through totalizer IC6, its value is V
4=(V
3R
4R
19/ R
2R
14+ R
11R
19C
1/ R
15∫ V
3Dt+R
13R
19C
2/ R
16DV
3/ dt)+V
bR
19/ R
17, the signal after the control of this part is amplified offers the high pressure amplifying circuit to carry out high pressure and is amplified to V
H=G
HV
4, and through two-stage overprotection circuit, last output high-voltage signal passes to piezo electric valve, the opening degree of control piezo electric valve is regulated pressure (G wherein automatically thereby regulate charge flow rate
IBe the gain of instrument amplifier, G
HGain for high-voltage amplifier), the gain of this loop is determined jointly that by these a few part Amplifier Gain the sensitivity of pressure adjustment and scope are finished by these Amplifier Gain are set.
Through experiment test, the control accuracy of temperature and pressure reaches 0.01 ℃ and 0.01kPa respectively, and than about high two orders of magnitude of the precision in original experiment, long term drift is also all within the control accuracy scope.It is used for the experiment of the self-assembled growth of colloidal crystal, and the preliminary experiment result shows that it can significantly improve the gained sample quality: the homogeneity of sample, and macroscopic defects, the microdefect aspect all obtains more significantly improving; Simultaneously, the experiment repeatability is significantly improved, and can be easier to obtain high-quality colloidal crystal.This self-assembled growth Controlling System is particularly suitable for colloidal crystal growth, also is applicable to the self-assembled growth of other type in the liquid environment in addition, as the molecule self-assembly etc.
It should be noted that at last, above embodiment is only in order to describe technical scheme of the present invention rather than the present technique method is limited, the present invention can extend to other modification, variation, application and embodiment on using, and therefore thinks that all such modifications, variation, application, embodiment are in spirit of the present invention and teachings.
Claims (10)
1. self-assembled growth pond comprises:
By the high metal shell of thermal conductivity;
Glass inner bag;
Wherein, described glass inner bag contacts with temperature sensor, and the internal medium in described self-assembled growth pond links to each other with the absolute pressure sensor of outside, described self-assembled growth pond.
2. the described self-assembled growth of claim 1 pond, wherein, described glass inner bag and described shell tight joint.
3. the good tinsel of thermal conductivity wherein, is inserted in the described self-assembled growth of claim 1 pond between described glass inner bag and the described shell.
4. self-assembled growth Controlling System comprises:
Self-assembled growth pond, temperature control modules and pressure control module;
Wherein, described temperature control modules comprises temperature sensor, temperature-control circuit and semiconductor chilling plate; Described pressure control module comprises absolute pressure sensor, pressure pilot circuit and piezo electric valve;
Described temperature sensor is arranged in the forward position of the close crystal growth in described self-assembled growth pond, described semiconductor chilling plate is arranged in the side or the bottom in described self-assembled growth pond, described temperature-control circuit is connected between described temperature sensor and the described semiconductor chilling plate, is used to control the temperature in described self-assembled growth pond;
Described absolute pressure sensor and piezo electric valve are arranged on the described self-assembled growth pond, and described pressure pilot circuit is arranged between described absolute pressure sensor and the piezo electric valve, is used to control the pressure in described self-assembled growth pond;
The shell in described self-assembled growth pond is made by the high metal of thermal conductivity, and inside is glass inner bag, and described temperature sensor contacts with described glass inner bag, and described absolute pressure sensor links to each other with described self-assembled growth pond is inner.
5. the described self-assembled growth Controlling System of claim 4, wherein, described glass inner bag and described shell tight joint.
6. the described self-assembled growth Controlling System of claim 4 wherein, is inserted the good tinsel of thermal conductivity between described glass inner bag and the described shell.
7. the described self-assembled growth Controlling System of claim 4, wherein, described temperature sensor is used for temperature survey is carried out in described self-assembled growth pond, and described semiconductor chilling plate is used for according to the signal that receives described self-assembled growth pond refrigeration or heating.
8. the described self-assembled growth Controlling System of claim 7, wherein, described temperature-control circuit comprises measures comparison circuit and current amplification circuit, described measurement comparison circuit is used to receive the temperature voltage signal in the described self-assembled growth pond that described temperature sensor provides, and compare with the votage reference of setting, obtain compensation voltage signal; Described current amplification circuit is used for described compensation voltage signal is amplified, and offers described semiconductor chilling plate.
9. the described self-assembled growth Controlling System of claim 4, wherein, described absolute pressure sensor is used for measuring the gas pounds per square inch absolute (psia) in described self-assembled growth pond, offers described pressure pilot circuit; Described piezo electric valve is used for the output signal according to described pressure pilot circuit, regulates charge flow rate, and gas pressure intensity in the growth pond is controlled.
10. the described self-assembled growth Controlling System of claim 9, wherein, described pressure pilot circuit comprises the measurement comparison circuit, PID amplifying circuit and high pressure amplifying circuit; Described measurement comparison circuit receives the pressure signal in the described self-assembled growth pond that described absolute pressure sensor provides, and make differential ratio with setting voltage value, the output differential signal is given the PID amplifying circuit, described PID amplifying circuit amplifies the differential signal that is received and offers described high pressure amplifying circuit, described high pressure amplifying circuit is used for that the signal that is received is carried out high pressure and amplifies, and offers described piezo electric valve.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910080543A CN101838840A (en) | 2009-03-20 | 2009-03-20 | Self-assembly growth pool and self-assembly growth control system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910080543A CN101838840A (en) | 2009-03-20 | 2009-03-20 | Self-assembly growth pool and self-assembly growth control system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101838840A true CN101838840A (en) | 2010-09-22 |
Family
ID=42742506
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200910080543A Pending CN101838840A (en) | 2009-03-20 | 2009-03-20 | Self-assembly growth pool and self-assembly growth control system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101838840A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102478791A (en) * | 2010-11-24 | 2012-05-30 | 中国科学院空间科学与应用研究中心 | Control system of experimental device of batch samples |
| CN102914622A (en) * | 2012-10-19 | 2013-02-06 | 中国科学院物理研究所 | Colloidal crystal testing device |
| CN102914621A (en) * | 2012-10-19 | 2013-02-06 | 中国科学院物理研究所 | Testing device for colloidal crystal |
-
2009
- 2009-03-20 CN CN200910080543A patent/CN101838840A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102478791A (en) * | 2010-11-24 | 2012-05-30 | 中国科学院空间科学与应用研究中心 | Control system of experimental device of batch samples |
| CN102478791B (en) * | 2010-11-24 | 2013-07-24 | 中国科学院空间科学与应用研究中心 | Control system of experimental device of batch samples |
| CN102914622A (en) * | 2012-10-19 | 2013-02-06 | 中国科学院物理研究所 | Colloidal crystal testing device |
| CN102914621A (en) * | 2012-10-19 | 2013-02-06 | 中国科学院物理研究所 | Testing device for colloidal crystal |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Dang et al. | Recent progress in the synthesis of hybrid halide perovskite single crystals | |
| CN100390329C (en) | Zinc oxide single crystal | |
| CN101838840A (en) | Self-assembly growth pool and self-assembly growth control system | |
| CN102289235B (en) | Heating control system and method based on top separated control polycrystalline silicon ingot casting furnace | |
| TWI632256B (en) | Czochralski crucible for controlling oxygen and related methods | |
| JP5851227B2 (en) | Silicon carbide single crystal manufacturing apparatus and silicon carbide single crystal manufacturing method | |
| CN103305797B (en) | Evaporation coating device | |
| CN106087036A (en) | A kind of czochralski crystal growing furnace | |
| CN109246860A (en) | In situ, dynamic observation material high temperature service under the microscope can be achieved | |
| CN111733448B (en) | Device and method for adjusting shouldering morphology in indium antimonide crystal growth process | |
| CN110284189A (en) | Microspur sublimation growth molecular crystal method and apparatus | |
| JPS5943439B2 (en) | Method and apparatus for controlling solidification of two-phase liquid/solid systems | |
| CN111945226A (en) | Preparation method of strontium titanate monocrystal microspheres | |
| CN104947180A (en) | Method for determining crystal leading crucible position of single crystal furnace | |
| CN103147127A (en) | Apparatus for growing moisture-absorbing monocrystals | |
| CN1936074A (en) | Method and apparatus for growing three-dimensional photon crystal film by pressure-reducing self-assembling | |
| CN103274583B (en) | Quartz crucible and preparation method thereof, P-type silicon ingot casting and preparation method thereof | |
| CN202705569U (en) | Pressure control system for silicon carbide single crystal growing furnace | |
| CN205099783U (en) | A single crystal growing furnace that is used for vertical pulling method manufacture order crystal silicon excellent | |
| TWI471463B (en) | Measurement and compensation system for ingot growth and method thereof | |
| TWI812512B (en) | Single crystal silicon crystal pulling control method and device, single crystal silicon crystal pulling furnace | |
| CN102677170B (en) | A kind of method and system controlling sapphire growth size | |
| CN114686965B (en) | Growth device and growth method of iridium-free zone-melting gallium oxide crystal | |
| CN108585854B (en) | Iron-doped perovskite type negative temperature coefficient thermosensitive ceramic material and preparation thereof | |
| CN213804066U (en) | Adjustable single crystal furnace crucible |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20100922 |