CN103147127A - Apparatus for growing moisture-absorbing monocrystals - Google Patents
Apparatus for growing moisture-absorbing monocrystals Download PDFInfo
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- CN103147127A CN103147127A CN201310076957XA CN201310076957A CN103147127A CN 103147127 A CN103147127 A CN 103147127A CN 201310076957X A CN201310076957X A CN 201310076957XA CN 201310076957 A CN201310076957 A CN 201310076957A CN 103147127 A CN103147127 A CN 103147127A
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Abstract
The invention discloses an apparatus for growing moisture-absorbing monocrystals, which mainly comprises an upper part furnace body and a lower part sealing chamber, wherein the upper part furnace body is provided with a rotary lifting motor, a furnace cover, a lifting rod, a temperature controller, a quartz tube, a hearth and a gas inlet device; the lower part sealing chamber comprises a support rod, an adjusting device and a base; and the sealing chamber is fixed to the ground through the base. The invention can reduce the wide range of gas flow, is more convenient for adjusting the temperature gradient distribution in the thermal field, and enhances the heat stability of the thermal field; the structure of the sealing system enhances the thermal efficiency of the thermal system; the gas inlet device on the bottom of the quartz tube can implement atmosphere protection and pressure control, or accurate control on the amount of impurity gas; the adjusting device on the bottom can adjust the height of the support rod; the rotary lifting motor on the top can set and adjust the state of the seed rod, crucible or the like according to different requirements; and an observation window reserved on the top of the hearth can be used for observing the crystal growth state and crucible position in real time.
Description
Technical field
The invention belongs to the technical field of melt method for growing monocrystalline, be specifically related to a kind of equipment of the easy moisture absorption single crystal of growing.
Background technology
Crystal can be realized interaction and the conversion of electricity, magnetic, light, sound and power etc., and it is indispensable important materials in the modern science technical development.No matter mineral crystal all far away can not satisfy the needs of modern science technical development, thereby promoted the development of artificial lens at aspects such as kind, quality and quantity.Simultaneously crystal growth apparatus----monocrystal growing furnace has also obtained development at full speed.
Although some artificial lenss have the excellent performances such as electricity, magnetic, light, sound and power, the properties influence of the easy moisture absorption that determines due to self structure its application in practice.The quality of crystal mass has directly determined the speed of crystal deliquescence cracking, and the ambient moisture during growing crystal directly has influence on the quality of crystal mass.
For example, CsLiB
6O
10(CLBO) crystal has excellent non-linear optical property, its transparency range is wide, nonlinear optical coefficients are large, double refraction is moderate, walk-off angle is little, laser damage threshold is high, allow the angle, allow wavelength, allowable temperature etc. to allow the parameter wide ranges, particularly the crystal growth cycle is short, easily grow the big scale monocrystalline, make it have good actual application prospect in the full solid state ultraviolet laser field.But due to CsLiB
6O
10Crystal is deliquescent characteristic in atmosphere, thereby has limited its range of application.Adopt top-seeded solution growth growth CsLiB
6O
10During crystal, be subject to the impact of air turbulence and water in air vapour, thereby limited the CsLiB of growth quality excellence
6O
10Monocrystalline.
In crystal growing process, it is quite crucial technical problem that reliable and stable temperature is controlled.Prior art is by coordination and improvement in the overall target of the aspects such as sealing effectiveness of the material of the material of the lagging material of the material of heating member and structure, thermal insulation layer and structure, crucible and structure, body of heater, thermograde in the temperature field of optimization crystal growth is interval, improves the growth quality of crystal.No matter these prior aries all exist the defective of temperature control aspect at material selection or aspect structure design, cause the quality of crystal growth to be affected.
Summary of the invention
Goal of the invention: the object of the invention is to for the deficiencies in the prior art, a kind of equipment of the easy moisture absorption single crystal of growing is provided.
technical scheme: the equipment that the invention provides a kind of easy moisture absorption single crystal of growing, this equipment comprises that mainly part body of heater and lower part sealing chamber form, wherein, upper part body of heater is provided with the rotary pulling motor, bell, lifting rod, temperature controlling instruments, silica tube, furnace bottom, air inletting device, comprise support bar in lower part sealing chamber, adjustment equipment and base, the sealing chamber is fixed by base and ground, burner hearth is set in the middle of in body of heater, the periphery of the burner hearth in body of heater is equipped with the temperature controlling instruments that warm area arranges, bell closely is fastened on above body of heater, lifting rod passes bell and can pump, the lifting rod top is fixedly connected with the rotary pulling motor, the lifting rod lower end is dismountable to be equipped with seed crystal or to hang crucible, support bar top is installed with crucible tray, silica tube is fixedly mounted on crucible tray, in body of heater, silica tube one side bottom is connected with air inletting device, place crucible on the crucible tray of silica tube interior bottom portion, support bar, crucible tray and silica tube integral body are passed the furnace bottom centre bottom, central position and lifting rod that silica tube is positioned at burner hearth are used in combination, support bar and crucible tray are positioned at the central position of sealing chamber, pass into dry atmosphere by air inletting device in silica tube, the bottom of support bar is provided with adjustment equipment.For reduce that gas flows on a large scale thereby burner hearth in silica tube is set.The body of heater top arranges rotation and the lifting that the rotary pulling motor can be controlled lifting rod.
In order to regulate easily the temperature gradient distribution in thermal field, put forward the high-temperature field thermostability, described temperature controlling instruments adopts one to six section warm area setting, each warm area comprises independently thermopair, each section independently all is provided with independently well heater between thermopair, described well heater also is connected with temperature-control device, and wherein, described well heater is resistance wire.
Described inboard wall of burner hearth is that alundum tube is made.
Described adjustment equipment comprises rotary components and lifting assembly, and described rotary components and lifting assembly comprise that rotation dop and coupled motor form, and are used for controlling rotation and the lifting of support bar.
Described support bar is that stainless steel or pottery are made.
Described equipment body of heater length range is 300-600mm, and silica tube diameter dimension scope is 30-60mm, and the furnace diameter size range is 80-180mm.
Beneficial effect: the invention has the advantages that:
(1) raising of thermostability.The setting of silica tube in burner hearth in the present invention can reduce gas and flow on a large scale, and body of heater can adopt the design of one to six section warm area, and the temperature gradient distribution in adjusting thermal field that can be convenient is put forward the high-temperature field thermostability;
(2) raising of thermo-efficiency.The structure of tightness system has improved the thermo-efficiency of hot system;
(3) realize that crystal grows under dry atmosphere.Silica tube bottom inflow system can realize atmosphere protection and pressure-controlling, or impurity gas is carried out the accurate control of tolerance;
(4) height that bottom adjustment equipment can lift supporting rod;
(5) rotary-top lifts motor and can to equipment states such as seed rod, crucibles, adjustment be set according to the difference requirement.
(6) roof of the furnace is reserved observation window, can realizing observation of growth state of crystal and bushing position.
Description of drawings:
Fig. 1 is structural representation of the present invention;
Embodiment:
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly described.Based on the embodiment in the present invention, those skilled in the art belong to the scope of protection of the invention not making the every other embodiment that obtains under the creative work prerequisite.
Embodiment 1:
The invention discloses a kind of equipment of the easy moisture absorption single crystal of growing, can apply to different growing methods, dry atmosphere can be used for improving the growth quality of easy moisture absorption crystal.
as Fig. 1, a kind of equipment of the easy moisture absorption single crystal of growing, this equipment comprises that mainly part body of heater 5 and lower part sealing chamber 9 form, wherein, upper part body of heater 5 is provided with rotary pulling motor 1, bell 2, lifting rod 3, resistance wire 7, thermopair 14, silica tube 6, furnace bottom 8, air inletting device 13, comprise support bar 10 in lower part sealing chamber 9, adjustment equipment 11 and base 15, sealing chamber 9 is fixed by base 15 and ground, in body of heater 5 interior centre, burner hearth 16 is set, burner hearth 16 in body of heater 5 periphery temperature controlling instruments 17 adopt one to six section warm area setting, each warm area comprises independently thermopair 14, each section independently all is provided with individual resistors silk 7 between thermopair 14, thermopair 14 provides data parameters for temperature-control device, in the present embodiment, described temperature-control device is AI-7/8 series high-performance intelligent temperature control device, resistance wire 7 is connected with this AI-7/8 series high-performance intelligent temperature control device, warm field distribution in stove can be accurately controlled in setting by each section warm area, bell 2 closely is fastened on body of heater 5 tops, lifting rod 3 passes bell 2 and can pump, lifting rod 3 tops are fixedly connected with rotary pulling motor 1, lifting rod 3 lower ends are dismountable to be equipped with seed crystal or to hang crucible 4, support bar 10 tops are installed with crucible tray 12, silica tube 6 is fixedly mounted on crucible tray 12, interior silica tube 6 one side bottoms of body of heater 5 are connected with air inletting device 13, place crucible on the crucible tray 12 of silica tube 6 interior bottom portion, support bar 10, crucible tray 12 and silica tube 6 integral body are passed furnace bottom 8 centre bottom, central position and lifting rod 3 that silica tube 6 is positioned at burner hearth 16 are used in combination, support bar 10 and crucible tray 12 are positioned at the central position of sealing chamber 9, pass into dry atmosphere by air inletting device 13 in silica tube 6, realize the drying in silica tube, the bottom of support bar 10 is provided with adjustment equipment 11.Described burner hearth 16 inwalls are that alundum tube is made, described adjustment equipment 11 comprises rotary components and lifting assembly, the top bell 2 of described burner hearth 16 is provided with observation window 18, can adjust support bar 10 by adjustment equipment 11, realizes that in crucible tray 12, crystal is grown with rotation and the lifting of crucible.Described support bar 10 is made for stainless steel.Described equipment body of heater 5 length are 300mm, and silica tube 6 diameter dimensions are 30mm, and burner hearth 16 diameter dimensions are 80mm.By being used in conjunction with of all parts, can obtain better growth conditions.
Embodiment 2:
The present embodiment is basic consistent with embodiment 1, and its difference is that described support bar 10 makes for pottery.Described equipment body of heater 5 length are 600mm, and silica tube 6 diameter dimensions are 60mm, and burner hearth 16 diameter dimensions are 180mm.By being used in conjunction with of all parts, can obtain better growth conditions.
Embodiment 3:
The present embodiment is basic consistent with embodiment 1, and its difference is that described equipment body of heater 5 length are 450mm, and silica tube 6 diameter dimensions are 45mm, and burner hearth 16 diameter dimensions are 130mm.By being used in conjunction with of all parts, can obtain best growth conditions.
Principle of work: oven body part of the present invention can comprise one to six section warm area, and each warm area all is provided with independently temperature control thermopair 14, all is provided with resistive heater 7 between each warm area; Be provided with silica tube 6 in burner hearth, silica tube 6 bottoms connection air inletting device 13, thus can lead to into dry atmosphere, realize the drying in silica tube 6; Burner hearth 16 bottoms are equipped with support bar 10, and the lower end of support bar 10 is connected with the rotation dop, and the rotation dop is connected with motor, thereby can control height and the rotating speed of support bar 10; Body of heater 5 tops are provided with rotary pulling motor 1 and lifting rod bar 3, can hang as requested seed rod or hang crucible, can use the different methods growing crystals such as top-seeded solution growth, falling crucible method, crystal pulling.The present invention can be according to the habit of different crystal, regulate easily the temperature of each warm area, and can reach the purpose of environment of crystal growth drying, obtain the condition of the most suitable crystal growth, adopt optimum growth method, thereby grow high-quality monocrystalline.This equipment is particularly suitable for the growth of easy moisture absorption crystal.
Above-described embodiment is because being interpreted as that only being used for explanation the present invention is not used in restriction protection scope of the present invention.After the content of having read the present invention's record, those skilled in the art can make various changes or modifications the present invention, and these equivalences change and modification falls into claim limited range of the present invention equally.
Claims (10)
- one kind the growth easy moisture absorption single crystal equipment, it is characterized in that: this equipment comprises that mainly part body of heater (5) and lower part sealing chamber (9) form, wherein, upper part body of heater (5) is provided with rotary pulling motor (1), bell (2), lifting rod (3), temperature controlling instruments (17), silica tube (6), furnace bottom (8), air inletting device (13), comprise support bar (10) in lower part sealing chamber (9), adjustment equipment (11) and base (15), sealing chamber (9) is fixed by base (15) and ground, burner hearth (16) is set in the middle of in body of heater (5), the periphery of the burner hearth (16) in body of heater (5) is equipped with the temperature controlling instruments (17) that warm area arranges, bell (2) closely is fastened on above body of heater (5), lifting rod (3) passes bell (2) and can pump, lifting rod (3) top is fixedly connected with rotary pulling motor (1), lifting rod (3) lower end is dismountable to be equipped with seed crystal or to hang crucible (4), support bar (10) top is installed with crucible tray (12), silica tube (6) is fixedly mounted on crucible tray (12), interior silica tube (6) one side bottoms of body of heater (5) are connected with air inletting device (13), the upper crucible of placing of the crucible tray (12) of silica tube (6) interior bottom portion, support bar (10), crucible tray (12) and silica tube (6) integral body are passed furnace bottom (8) centre bottom, central position and lifting rod (3) that silica tube (6) is positioned at burner hearth (16) are used in combination, support bar (10) and crucible tray (12) are positioned at the central position of sealing chamber (9), pass into dry atmosphere by air inletting device (13) in silica tube (6), the bottom of support bar (10) is provided with adjustment equipment (11).
- 2. the equipment of a kind of easy moisture absorption crystal of growing as claimed in claim 1, it is characterized in that: described temperature controlling instruments (17) adopts one to six section warm area setting, each warm area comprises independently thermopair (14), and each section independently all is provided with independently well heater between thermopair (14).
- 3. the equipment of a kind of easy moisture absorption crystal of growing as claimed in claim 1, it is characterized in that: described well heater also is connected with temperature-control device.
- 4. a kind of equipment of the easy moisture absorption crystal of growing as claimed in claim 2 or claim 3, it is characterized in that: described well heater is resistance wire (7).
- 5. the equipment of a kind of easy moisture absorption crystal of growing as claimed in claim 1, it is characterized in that: described burner hearth (16) inwall is that alundum tube is made.
- 6. the equipment of a kind of easy moisture absorption crystal of growing as claimed in claim 1, it is characterized in that: described adjustment equipment (11) comprises rotary components and lifting assembly.
- 7. the equipment of a kind of easy moisture absorption crystal of growing as claimed in claim 1, it is characterized in that: the top bell (2) of described burner hearth (16) is provided with observation window (18).
- 8. the equipment of a kind of easy moisture absorption crystal of growing as claimed in claim 5 is characterized in that: described rotary components and lifting assembly form for rotation dop and coupled motor.
- 9. the equipment of a kind of easy moisture absorption crystal of growing as described in claim 1-8, it is characterized in that: described support bar (10) is made for stainless steel or pottery.
- 10. the equipment of a kind of easy moisture absorption crystal of growing as described in claim 1-8, it is characterized in that: described equipment body of heater (5) length range is 300-600mm, silica tube (6) diameter dimension scope is 30-60mm, and burner hearth (16) diameter dimension scope is 80-180mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310076957.XA CN103147127B (en) | 2013-03-11 | 2013-03-11 | A kind of equipment growing easy moisture absorption single crystal |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310076957.XA CN103147127B (en) | 2013-03-11 | 2013-03-11 | A kind of equipment growing easy moisture absorption single crystal |
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| CN103147127A true CN103147127A (en) | 2013-06-12 |
| CN103147127B CN103147127B (en) | 2016-02-10 |
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| CN201310076957.XA Expired - Fee Related CN103147127B (en) | 2013-03-11 | 2013-03-11 | A kind of equipment growing easy moisture absorption single crystal |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104651934A (en) * | 2014-10-17 | 2015-05-27 | 洛阳市西格马炉业有限公司 | Energy-saving sapphire crystal growth furnace |
| CN106011995A (en) * | 2016-06-23 | 2016-10-12 | 重庆大学 | Simple single crystal furnace and control method thereof |
| CN106435712A (en) * | 2016-11-14 | 2017-02-22 | 济南金曼顿自动化技术有限公司 | Crystal pulling furnace with replaceable furnace cavity |
| CN113024103A (en) * | 2021-04-10 | 2021-06-25 | 南京至淳宏远科技有限公司 | Device and method for preparing rare earth doped optical fiber preform |
| CN114045557A (en) * | 2021-10-25 | 2022-02-15 | 安徽光智科技有限公司 | Method and equipment for preparing ultra-high purity germanium single crystal |
| CN114959869A (en) * | 2022-05-30 | 2022-08-30 | 大庆溢泰半导体材料有限公司 | Defect monitoring equipment in crystal growth process |
| CN115467015A (en) * | 2022-10-18 | 2022-12-13 | 中国电子科技集团公司第二十六研究所 | Automatic control equipment for liquid phase epitaxial YIG crystal growth |
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| CN2559657Y (en) * | 2002-08-27 | 2003-07-09 | 中国科学院福建物质结构研究所 | Double controlling temperature crystal grower furnace |
| CN1654715A (en) * | 2004-08-10 | 2005-08-17 | 山东大学 | Suspension crucible for growth of lithium niobate crystal with near stoichiometric ratio and its growth process |
| CN102206859A (en) * | 2011-06-30 | 2011-10-05 | 白尔隽 | Ultrahigh-purity germanium single crystal preparation process and special equipment |
-
2013
- 2013-03-11 CN CN201310076957.XA patent/CN103147127B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN2559657Y (en) * | 2002-08-27 | 2003-07-09 | 中国科学院福建物质结构研究所 | Double controlling temperature crystal grower furnace |
| CN1654715A (en) * | 2004-08-10 | 2005-08-17 | 山东大学 | Suspension crucible for growth of lithium niobate crystal with near stoichiometric ratio and its growth process |
| CN102206859A (en) * | 2011-06-30 | 2011-10-05 | 白尔隽 | Ultrahigh-purity germanium single crystal preparation process and special equipment |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104651934A (en) * | 2014-10-17 | 2015-05-27 | 洛阳市西格马炉业有限公司 | Energy-saving sapphire crystal growth furnace |
| CN104651934B (en) * | 2014-10-17 | 2017-12-01 | 洛阳西格马炉业股份有限公司 | A kind of energy-saving sapphire crystal growing furnace |
| CN106011995A (en) * | 2016-06-23 | 2016-10-12 | 重庆大学 | Simple single crystal furnace and control method thereof |
| CN106011995B (en) * | 2016-06-23 | 2019-01-25 | 重庆大学 | A kind of simple single crystal growing furnace and its control method |
| CN106435712A (en) * | 2016-11-14 | 2017-02-22 | 济南金曼顿自动化技术有限公司 | Crystal pulling furnace with replaceable furnace cavity |
| CN106435712B (en) * | 2016-11-14 | 2018-09-18 | 济南金曼顿自动化技术有限公司 | A kind of crystal pull stove that furnace chamber is replaceable |
| CN113024103A (en) * | 2021-04-10 | 2021-06-25 | 南京至淳宏远科技有限公司 | Device and method for preparing rare earth doped optical fiber preform |
| CN113024103B (en) * | 2021-04-10 | 2022-08-26 | 南京至淳宏远科技有限公司 | Device and method for preparing rare earth doped optical fiber preform |
| CN114045557A (en) * | 2021-10-25 | 2022-02-15 | 安徽光智科技有限公司 | Method and equipment for preparing ultra-high purity germanium single crystal |
| CN114045557B (en) * | 2021-10-25 | 2024-05-10 | 安徽光智科技有限公司 | Method and equipment for preparing ultra-high purity germanium monocrystal |
| CN114959869A (en) * | 2022-05-30 | 2022-08-30 | 大庆溢泰半导体材料有限公司 | Defect monitoring equipment in crystal growth process |
| CN114959869B (en) * | 2022-05-30 | 2023-08-15 | 大庆溢泰半导体材料有限公司 | Defect monitoring equipment in crystal growth process |
| CN115467015A (en) * | 2022-10-18 | 2022-12-13 | 中国电子科技集团公司第二十六研究所 | Automatic control equipment for liquid phase epitaxial YIG crystal growth |
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