CN101833236A - Gray mask - Google Patents
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- CN101833236A CN101833236A CN201010189553A CN201010189553A CN101833236A CN 101833236 A CN101833236 A CN 101833236A CN 201010189553 A CN201010189553 A CN 201010189553A CN 201010189553 A CN201010189553 A CN 201010189553A CN 101833236 A CN101833236 A CN 101833236A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Liquid Crystal (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Thin Film Transistor (AREA)
Abstract
Problem of the present invention provides a kind of gray mask, possess the component graphics that forms with gray mask be formed with other photomask have with the overlapping part of this component graphics with relevant marks accurately such as gate electrode and contact hole.Gray mask of the present invention is by having semi-transparent film pattern and vacating the regional photomask figure that is formed on the above-mentioned semi-transparent film pattern of surplus in the transmittance section side on the transparency carrier, have thus: the light shielding part that photomask figure and semi-transparent film pattern are laminated, the semi light transmitting part that is formed with semi-transparent film except that light shielding part, and not only do not formed semi-transparent film but also do not formed the transmittance section of photomask; Wherein: the marker graphic of the contraposition when this gray mask has that formation with above-mentioned semi-transparent film pattern forms simultaneously, exposure.
Description
The application is that denomination of invention is " gray mask and a manufacturing method of film transistor base plate ", and the applying date is on March 22nd, 2006, and application number is dividing an application of 200610065456.1 application for a patent for invention.
Technical field
The present invention relates to be used in rightly the gray mask of thin film transistor base plate (hereinafter referred to as the TFT substrate) used in the manufacturing of thin-film transistor LCD device (Thin FilmTransistor Liquid Crystal Display) etc. and used the manufacturing method of film transistor base plate of gray mask.
Background technology
TFT-LCD compares with CRT (cathode-ray tube (CRT)), forms advantage slim and low in energy consumption easily owing to have, and makes progress just sharp aspect commercialization at present.TFT-LCD has at the TFT substrate that is arranged in the structure of having arranged TFT on each rectangular pixel and with the colour filter that each pixel has been arranged the pixel graphics of red, green and blue accordingly and is getting involved the schematic configuration that coincides together under the situation of liquid crystal phase.In TFT-LCD, the worker ordinal number is many, only makes the TFT substrate and will use 5～6 photomasks.
Under such situation, the method for carrying out the manufacturing of TFT substrate by means of with 4 photomasks has been proposed, that is, the method for photoresist figure of using 2 kinds of thickness is to reduce the method for photo-mask process number.
For example, in patent documentation 1, announced patent with operation of using following photoresist: between source electrode and drain electrode (groove) have the 1st thickness photoresist, have 2nd thickness thicker than the 1st thickness photoresist, have the photoresist of the 3rd thickness than the 1st thin thickness (comprise thickness be zero situation).
In addition, in patent documentation 1, have the method for the photoresist figure of these 2 kinds of thickness as formation, announced 2 kinds of methods, that is, (1) uses the method for the gray mask with transmittance section, light shielding part and semi light transmitting part and (2) to utilize the backflow of resist to make the method for resist distortion.
As above-mentioned gray mask, has or utilizes the little figure of resolution of the exposure device of ratio use mask, for example the figure of slit and grid form forms semi light transmitting part, or the method for semi-transparent film with the exposure of regulating light be set, under the situation of semi-transparent film, not exclusively remove light-proofness chromium layer and keep certain thickness, the exposure of the light that enters by this part is reduced.
Figure 20 (a) is as light shielding part 204 with the zone corresponding with source electrode and drain electrode, with with they between the corresponding zone of groove as the example of the semi light transmitting part 203 of shape of slit, Figure 20 (b) is the example that forms the zone corresponding with above-mentioned groove with semi-transparent film.
With record and narrate in the patent documentation 1, be called example 1 in advance with the zone corresponding as the gray mask of semi light transmitting part with groove.
On the other hand, as another example of the manufacture method of TFT substrate, for example, in patent documentation 2, announced the method that to use gray mask and utilized the method both sides that make the resist distortion of refluxing to make up the manufacture method of the TFT substrate that uses.
Below, use the example that Figure 21 illustrates the method described in the patent documentation 2.
Shown in Figure 21 (a), on glass substrate 101, use the photoetching process of having used photomask and form gate electrode 102, on glass substrate 101, form gate insulating film 103 after the covering grid electrode 102, on gate insulating film 103, the stacked silicon fiml 104 of deposit, n+ silicon fiml 105, metal film 106 successively.
Then, on metal film 106, apply positive light anti-etching agent, form resist film 107, shown in Figure 21 (b), across gray mask 200, to resist film 107 irradiation exposure light.Figure 22 is the vertical view of gray mask.Light shielding part 204 is opposed parts of source electrode and drain electrode, forms accordingly with the zone of groove institute adjacency, and the remainder of source electrode and drain electrode is formed by semi light transmitting part 203, and the groove between source electrode and drain electrode forms with transmittance section 205.
Then, as the positive light anti-etching agent after the exposure is developed, then thick mask graph 107a part is dissolved hardly and is retained, and thin mask graph 107b partly has dissolving to a certain degree, and other parts are dissolved fully and disappeared.Consequently, shown in Figure 21 (c), the thin mask graph 107b that thick mask graph 107a that thickness is thick and thickness are thin can form simultaneously.
Then, by carrying out etching as mask, shown in Figure 21 (d), on silicon fiml 104, form ohmic contact layer 105a, 105b and source electrode 106a, drain electrode 106b with thick mask graph 107a and thin mask graph 107b.
After having formed ohmic contact layer 105a, 105b,, thick mask graph 107a and thin mask graph 107b are refluxed by heating etc.Thus, each mask graph as organic resin is expanded on silicon fiml 104 planes, on the silicon fiml 104 between ohmic contact layer 105a and the ohmic contact layer 105b, thick mask graph 107a and thin mask graph 107b link up, shown in the vertical view of Figure 21 (e) and Figure 23, form backflow mask graph 108.Have, Figure 21 (e) shows the x-x section of Figure 23 again.
Then, by with backflow mask graph 108 as mask, etching is removed silicon layer 104, and removes backflow mask graph 108, has obtained forming on semiconductor island the state (not shown) of ohmic contact layer 105a, 105b and source electrode 106a, drain electrode 106b.Thereafter, form passivating film (not shown), on the electrode 106a of source, use the photoetching process of having used other photomask and form contact hole 109, in these contact hole bottoms, form the pixel electrode (not shown) that is connected with source electrode 106a, the portion of terminal electrode (not shown) that is connected with gate electrode.
The gray mask that zone described in the patent documentation 2, except that the opposed part of source electrode and drain electrode is become semi light transmitting part is called example 2 in advance.
[patent documentation 1] TOHKEMY 2000-165886 communique
[patent documentation 2] TOHKEMY 2002-261078 communique
; in the manufacturing of TFT substrate as described above; in the gray mask that is used to form source electrode and drain electrode; in general; outside the component graphics zone on gray mask, be equipped with the gate electrode that forms with using other mask and contact hole etc., the mark relevant (alignment mark during exposure, positional precision affirmation with mark etc.) with the overlapping component graphics of source electrode and/or drain electrode.
Even in the semi light transmitting part of gray mask is the situation of the figure littler than the resolution of the exposure device that uses mask, or under the situation of semi-transparent film, in the gray mask that forms fully the such electrode part of example in advance 1 by light shielding part, also can be in the processing photomask formation marker graphic.Yet, as the example 2 of going ahead of the rest, form in the gray mask of electrode part by light shielding part and semi light transmitting part, form under the situation of semi light transmitting part by semi-transparent film wanting,, can not serve as a mark when then having and bring into play the problem of function exactly if as in the past, on photomask, form marker graphic.In theory, as long as mark is relevant with certain mask graph.Yet, form under the situation of semi light transmitting part by semi-transparent film wanting, in the processing of the processing of semi-transparent film and photomask, must adopt different photo-mask processs.Like this, when carrying out describing for 2 times, describe though take the aligning measure to make not cause to carry out the 2nd time with the map migration of describing for the 1st time, alignment precision is limitary, is difficult to eliminate fully alignment offset.Therefore, although the part corresponding with the overlapping part of the component graphics that forms with other mask and source electrode and/or drain electrode is semi light transmitting part, if but when the processing photomask, form the mark relevant with this component graphics, cause when describing for 2 times that then skew has taken place the mutual relationship of mask graph and mark under the situation of offset.
Summary of the invention
The present invention In view of the foregoing carries out, its the 1st purpose is, a kind of gray mask is provided, possess be used to make the 1st component graphics that has the above-mentioned gray mask of usefulness at least and form, with the mask graph of the substrate to be copied of the 2nd component graphics of having of forming of other photomask and the part that the 1st component graphics is overlapping, and with follow the overlapping relevant mark accurately of the 2nd component graphics of the 1st component graphics.
In addition, its 2nd purpose is, a kind of manufacturing method of film transistor base plate of using this gray mask is provided.
In order to solve above-mentioned problem, the present invention has following formation.
One aspect of the present invention provides a kind of gray mask that is used to make liquid crystal indicator, it is characterized in that, this gray mask is by having semi-transparent film pattern and vacating the regional photomask figure that is formed on the above-mentioned semi-transparent film pattern of surplus in the transmittance section side on the transparency carrier, have thus: the light shielding part that photomask figure and semi-transparent film pattern are laminated, the semi light transmitting part that is formed with semi-transparent film except that light shielding part, and not only do not formed semi-transparent film but also do not formed the transmittance section of photomask; Wherein: the marker graphic of the contraposition when this gray mask has that formation with above-mentioned semi-transparent film pattern forms simultaneously, exposure.(constituting 1) a kind of gray mask, on substrate to be copied, has the thick resist pattern of being used to form, the thick resist pattern formation portion of thin resist figure and non-resist region, thin resist figure formation portion and non-resist region formation portion, above-mentioned thin resist figure is made of semi light transmitting part, above-mentioned thick resist pattern formation portion and above-mentioned non-resist region formation portion are respectively by being that light shielding part or the transmittance section that eurymeric or minus determine constitutes according to the resist on substrate to be copied, it is characterized in that, above-mentioned gray mask has at least: mask graph, has the 1st component graphics that at least one forms with above-mentioned gray mask as being used to make, and be formed with other photomask and have with the substrate to be copied of the 2nd component graphics of the overlapping part of the 1st component graphics, with above-mentioned the 1st component graphics corresponding mask figure, the zone on the above-mentioned gray mask corresponding with the overlapping part of above-mentioned the 1st component graphics and above-mentioned the 2nd component graphics becomes semi light transmitting part; And form with the formation of above-mentioned semi light transmitting part the time, with the relevant marker graphic of above-mentioned the 2nd component graphics.
(constituting 2) is as constituting the gray mask described in 1, it is characterized in that, the zone that also comprises on the above-mentioned gray mask corresponding with the overlapping part of above-mentioned the 1st component graphics and above-mentioned the 2nd component graphics is the mask graph of light shielding part or transmittance section, and form with the formation of above-mentioned light shielding part or transmittance section the time, with the relevant marker graphic of above-mentioned the 2nd component graphics.
(constituting 3), is characterized in that above-mentioned marker graphic is formed by light shielding part and transmittance section as constituting the gray mask described in 1 or 2.
(constituting 4) a kind of gray mask, on substrate to be copied, has the thick resist pattern of being used to form, the thick resist pattern formation portion of thin resist figure and non-resist region, thin resist figure formation portion and non-resist region formation portion, above-mentioned thin resist figure is made of semi light transmitting part, above-mentioned thick resist pattern formation portion and above-mentioned non-resist region formation portion are respectively by being that light shielding part or the transmittance section that eurymeric or minus determine constitutes according to the resist on substrate to be copied, it is characterized in that, above-mentioned gray mask has at least: mask graph, at least has the 1st component graphics that an above-mentioned gray mask of usefulness forms as being used to make, and be formed with other photomask and have with the substrate to be copied of the 2nd component graphics of the overlapping part of the 1st component graphics, with above-mentioned the 1st component graphics corresponding mask figure, the zone on the above-mentioned gray mask corresponding with the overlapping part of above-mentioned the 1st component graphics and above-mentioned the 2nd component graphics becomes semi light transmitting part; And with the formation of above-mentioned light shielding part or transmittance section the time position offset that form, that grasped above-mentioned semi light transmitting part and above-mentioned light shielding part or transmittance section, and the relevant marker graphic of above-mentioned the 2nd component graphics.
(constituting 5) a kind of gray mask, on substrate to be copied, has the thick resist pattern of being used to form, the thick resist pattern formation portion of thin resist figure and non-resist region, thin resist figure formation portion and non-resist region formation portion, above-mentioned thin resist figure is made of semi light transmitting part, above-mentioned thick resist pattern formation portion and above-mentioned non-resist region formation portion are respectively by being that light shielding part or the transmittance section that eurymeric or minus determine constitutes according to the resist on substrate to be copied, it is characterized in that, above-mentioned gray mask has at least: mask graph, at least has the 1st component graphics that an above-mentioned gray mask of usefulness forms as being used to make, and be formed with other photomask and have with the substrate to be copied of the 2nd component graphics of the overlapping part of the 1st component graphics, with above-mentioned the 1st component graphics corresponding mask figure, the zone on the above-mentioned gray mask corresponding with the overlapping part of above-mentioned the 1st component graphics and above-mentioned the 2nd component graphics becomes the mask graph of light shielding part or transmittance section; And with the formation of above-mentioned semi light transmitting part the time position offset that form, that grasped above-mentioned light shielding part or transmittance section and above-mentioned semi light transmitting part, and the relevant marker graphic of above-mentioned the 2nd component graphics.
(constituting 6) a kind of manufacturing method of film transistor base plate is characterized in that having the operation of carrying out graph copying with any described gray mask in the formation 1,2,4,5.
Gray mask according to the present invention the 1st aspect, at least has the 1st component graphics that forms with gray mask comprising as being used to make, mask graph with the substrate to be copied of the 2nd component graphics of the overlapping part of having of forming with other photomask and the 1st component graphics, zone on the gray mask corresponding with the overlapping part of the 1st component graphics and the 2nd component graphics becomes under the situation of mask graph of semi light transmitting part, since the marker graphic relevant with the 2nd component graphics with the formation of above-mentioned semi light transmitting part in form, so a kind of gray mask that has possessed the relevant accurate mark of 2nd component graphics overlapping with following the 1st component graphics can be provided.
In addition, gray mask according to the present invention the 2nd aspect, also comprising under the situation of mask graph that zone on the gray mask corresponding with the overlapping part of the 1st component graphics and the 2nd component graphics is light shielding part or transmittance section, since with the relevant other marker graphic of the 2nd component graphics with the formation of light shielding part or transmittance section in form, so a kind of gray mask that has possessed the relevant accurate mark of 2nd component graphics overlapping with following the 1st component graphics can be provided.
In addition,, form by light shielding part and transmittance section, a kind of gray mask that has possessed the high mark of contrast can be provided by marker graphic according to the gray mask of the present invention the 3rd aspect.
In addition, gray mask according to the present invention the 4th aspect, become under the situation of mask graph of semi light transmitting part comprising zone on the gray mask corresponding with the overlapping part of the 1st component graphics and the 2nd component graphics, since the marker graphic relevant with the 2nd component graphics with the formation of light shielding part or transmittance section in formation, and grasped the position offset of semi light transmitting part and light shielding part or transmittance section, so can provide a kind of gray mask that has possessed the relevant accurate mark of 2nd component graphics overlapping with following the 1st component graphics.
In addition, gray mask according to the present invention the 5th aspect, become under the situation of mask graph of light shielding part or transmittance section comprising zone on the gray mask corresponding with the overlapping part of the 1st component graphics and the 2nd component graphics, since the marker graphic relevant with the 2nd component graphics with the formation of semi light transmitting part in formation, and grasped the position offset of light shielding part or transmittance section and semi light transmitting part, so can provide a kind of gray mask that has possessed the relevant accurate mark of 2nd component graphics overlapping with following the 1st component graphics.
In addition, manufacturing method of film transistor base plate according to the present invention the 6th aspect, owing to carry out graph copying with gray mask of the present invention, so the 1st component graphics that forms with this gray mask and be formed the positional precision height that has with the 2nd component graphics of the overlapping part of the 1st component graphics with other photomask, the work that therefore substrate does not take place is bad, can obtain high-quality thin film transistor base plate.
Description of drawings
Fig. 1 (a) is the vertical view of the gray mask of embodiment 1, (b) is the vertical view of this component graphics, (c) is the vertical view of the resist figure on the substrate to be copied.
Fig. 2 is the manufacturing procedure picture of the gray mask of embodiment 1.
Fig. 3 is the manufacturing procedure picture of the gray mask of embodiment 1.
Fig. 4 is the vertical view of the gray mask of embodiment 2.
Fig. 5 is the manufacturing procedure picture of the gray mask of embodiment 2.
Fig. 6 is the manufacturing procedure picture of the gray mask of embodiment 2.
Fig. 7 is the vertical view of the gray mask of embodiment 3.
Fig. 8 is the manufacturing procedure picture of the gray mask of embodiment 3.
Fig. 9 is the manufacturing procedure picture of the gray mask of embodiment 3.
Figure 10 is the manufacturing procedure picture of the gray mask of embodiment 4.
Figure 11 is the manufacturing procedure picture of the gray mask of embodiment 4.
Figure 12 (a) is the vertical view of the gray mask of embodiment 5, (b) is the vertical view of this component graphics, (c) is the vertical view of the resist figure on the substrate to be copied.
Figure 13 is the manufacturing procedure picture of the gray mask of embodiment 5.
Figure 14 is the manufacturing procedure picture of the gray mask of embodiment 5.
Figure 15 is the manufacturing procedure picture of the gray mask of embodiment 6.
Figure 16 is the manufacturing procedure picture of the gray mask of embodiment 6.
Figure 17 (a) is the vertical view of the gray mask of embodiment 7, (b) is the vertical view of this component graphics, (c) is the vertical view of the resist figure on the substrate to be copied.
Figure 18 is the manufacturing procedure picture of the gray mask of embodiment 7.
Figure 19 is the manufacturing procedure picture of the gray mask of embodiment 7.
Figure 20 (a) and (b) be the vertical view of existing gray mask figure.
Figure 21 is the manufacturing procedure picture of existing TFT substrate.
Figure 22 is the vertical view of existing gray mask figure.
Figure 23 is the vertical view of the TFT substrate in the existing fabrication phase.
Wherein, symbol description is:
Transparency carrier; 2 semi-transparent films; 3 photomasks; 10,11 mask blanks; 20 gray masks; 21 semi light transmitting part; 22 light shielding parts; 23 transmittance sections; 30 component graphics; 31 marker graphics relevant with contact hole; 32 marker graphics relevant with gate electrode
Embodiment
Below, explain the present invention by embodiment.Having, in the following embodiments, is prerequisite with the resist that the eurymeric resist is used on the substrate to be copied again, illustrates that with thick resist pattern formation portion be light shielding part, is the gray mask of transmittance section with non-resist region formation portion.
(embodiment 1)
Fig. 1 (a) is the vertical view of the gray mask 20 of present embodiment, (b) is the source electrode on the expression TFT substrate and near the vertical view of the figure 30 the drain electrode, (c) is the vertical view of formed resist figure on the expression substrate to be copied.
Shown in Fig. 1 (b), in the present embodiment, light shielding part 22 in the figure 30 is as the opposed part of source electrode and drain electrode, form accordingly with the zone of adjacency groove, the remainder of source electrode and drain electrode is formed by semi light transmitting part 21, and the groove between source electrode and the drain electrode is formed by transmittance section 23.On substrate to be copied, under the situation of eurymeric resist, light shielding part 22 forms thick resist pattern 42, and semi light transmitting part 21 forms thin resist figure 41.
In the manufacturing of such TFT substrate, in the gray mask that is used to form source electrode and drain electrode, outside the component graphics zone on gray mask, form the gate electrode (G) that forms with using other mask and contact hole (H) etc., with source electrode (S) and/or the overlapping relevant mark of component graphics of drain electrode (D), in the present embodiment, possess marker graphic 31 relevant and the marker graphic 32 relevant with above-mentioned gate electrode (G) with above-mentioned contact hole (H).Have again, in the present embodiment, the component graphics of source electrode (S) and drain electrode (D) is with corresponding with the semi light transmitting part on the gray mask with the overlapping part of the contact hole (H) of other photomask formation, at the component graphics of source electrode (S) and drain electrode (D) with among, corresponding with the light shielding part on the gray mask with the part of the groove adjacency that when forming gate electrode (G), is easy to aim at the overlapping part of the gate electrode (G) of other photomask formation.
Then, with Fig. 2 and Fig. 3 the method for making above-mentioned gray mask is described.
Employed in the present embodiment mask blank 10 is of a size of on the large-scale transparency carrier 1 of 450mm * 550mm at the first type surface that is made of quartz etc. shown in Fig. 2 (a), forms semi-transparent film 2 and photomask 3 successively.
Herein,, be preferably film and can obtain high light-proofness, for example can enumerate Cr, Si, W, Al etc. as the material of photomask 3.Have again, photomask 3 can be in surface or table the two sides for example have the anti-reflecting layer that the oxide by above-mentioned metal constitutes.In addition, material as semi-transparent film 2, be preferably film and the transmissivity of transmittance section is decided to be and to obtain the material that transmissivity is about 50% semi-transparency at 100% o'clock, for example can enumerate Cr compound (oxide of Cr, nitride, oxynitride, fluoride etc.), MoSi, Si, W, Al etc.Si, W, Al etc. are can obtain the material that high light-proofness maybe can obtain semi-transparency according to its thickness.In addition, in the component graphics zone, because the light shielding part of formed mask is semi-transparent film 2 and the lamination of photomask 3, so even light-proofness deficiency when using photomask separately, as long as when merging use, can obtain light-proofness with semi-transparent film.Have, herein, so-called transmissivity is meant with respect to the transmissivity of for example large LCD being used the exposure light wavelength of exposure machine of using gray mask again.In addition, the transmissivity of semi-transparent film needn't be defined in about 50% fully.The transmittance of semi light transmitting part be set at which kind of degree be the design on problem.
In addition, about the combination of the material of above-mentioned photomask 3 and semi-transparent film 2, wish the etching characteristic inequality of film, another kind of film has tolerance in a kind of etching environment of film.For example, forming photomask 3 by Cr, form by MoSi under the situation of semi-transparent film 2, if with chlorine is gas dry etching Cr photomask 3, or ammonium ceric nitrate mixed with peroxy salt, carry out wet etching with the etching liquid after the dilution, then and the semi-transparent film of MoSi of substrate between can obtain high etching selection ratio, so can only remove the Cr photomask by etching, and hardly the semi-transparent film of MoSi be caused damage.In addition, wish above-mentioned photomask 3 and semi-transparent film 2 on substrate during film forming tack good.
Aforementioned mask blank 10 obtains by form semi-transparent film 2 and photomask 3 successively on transparency carrier 1, but film build method is as long as suitably select vapour deposition method, sputtering method, CVD (chemical vapor deposition) method etc. to be suitable for the method for film kind.In addition,, there is no special restriction, in a word as long as form so that obtain good light-proofness or semi-transparency with best thickness about thickness.
Then, on this mask blank 10, for example apply the eurymeric resist that electron beam or laser are described usefulness, cure, be formed for forming the resist film 4 (with reference to Fig. 2 (b)) of photomask figure.Then, describing machine etc. with electron beam drawing machine or laser describes.The data of describing of this moment are to be the graph data of photomask figure 3a in the component graphics zone, and photomask figure 3a and the opposed part as source electrode and drain electrode shown in Fig. 1, corresponding with the light shielding part zone 22 of groove adjacency.After describing, it is developed, on mask blank, form the resist figure 4a (with reference to Fig. 2 (c)) corresponding with light shielding part.
Then, as mask, etching photomask 3 forms the photomask figure 3a corresponding with light shielding part (with reference to Fig. 2 (c)) with formed resist figure 4a.Under the situation that photomask 3 is made of the Cr based material, can use the dry etching that has adopted chlorine.Beyond the zone corresponding with light shielding part, by the etching of photomask 3, the semi-transparent film 2 of substrate is the state that exposes.Residual resist figure 4a uses based on the ashing of oxygen or the concentrated sulphuric acid etc. and removes (with reference to Fig. 2 (d)).
Have again, in the use of present embodiment in the manufacturing process of TFT substrate of gray mask, because the interval with regulation on gate electrode forms source electrode and drain electrode, again owing to the measure of aiming at that must take gate electrode with source electrode and drain electrode, so as mentioned above, on mask, be provided with the mark relevant (alignment mark during exposure, positional precision affirmation with mark etc.) 32 with the aligning of gate electrode.At this moment, because by the accurate contraposition of the groove of source electrode and drain electrode clamping and gate electrode is important, obtain relevant mark so be preferably in the outer setting in the component graphics zone of mask with the formed film pattern of the most close groove side of source electrode and drain electrode, in the present embodiment, the formed film pattern of the most close groove side of source electrode and drain electrode is the photomask figure.Thereby, in the present embodiment, in above-mentioned operation, be used to form photomask figure 3a describe comprise the mark relevant in the data with gate electrode, with the formation of the photomask figure in component graphics zone in, also carry out the formation of marker graphic 32.
Then, the above-mentioned resist of coating on whole forms resist film 4 (with reference to Fig. 2 (e)) again.Then, carrying out the 2nd time describes.The data of describing of this moment are and source electrode shown in Figure 1 and drain electrode graph of a correspondence data.After describing, it is developed, be formed for forming the resist figure 4b (with reference to Fig. 3 (f)) of semi-transparent film pattern.
Then, as mask, remove the semi-transparent film 2 in the zone that becomes the transmittance section by etching, form semi-transparent film pattern 2a with formed resist figure 4b.Thus, semi light transmitting part is depicted as the transmittance section, forms semi light transmitting part and transmittance section (with reference to Fig. 3 (g)).In the present embodiment, because the semi light transmitting part in the component graphics zone on contact hole and the gray mask is corresponding, so in above-mentioned operation, be used to form semi-transparent film pattern 2a describe comprise the mark relevant in the data with contact hole, with the formation of the semi-transparent film pattern in component graphics zone in, also carry out the formation of marker graphic 31.Then, residual resist figure is removed (with reference to Fig. 3 (h)) with oxygen ashing etc.
Below do the gray mask shown in Figure 1 20 that produces present embodiment like this.According to the gray mask of present embodiment, because the semi light transmitting part in the component graphics zone on contact hole and the gray mask is corresponding, so the marker graphic 31 relevant with contact hole forms in the formation of semi light transmitting part.That is, in the present embodiment, the source electrode (S) (the 1st component graphics) that forms with gray mask except with the zone of the part of groove adjacency on have the part of the contact hole (H) (the 2nd component graphics) that the other photomask of overlapping usefulness forms.Since with the source electrode (S) of above-mentioned gray mask formation except with the regional corresponding gray mask of the part of groove adjacency on the zone be semi light transmitting part, so by in the formation of semi light transmitting part, forming and the relevant marker graphic of contact hole on the gray mask, improved the accuracy that serves as a mark, under the situation of the contraposition when mark is used to expose, between above-mentioned gray mask and other photomask, can carry out contraposition accurately, under the situation of the location confirmation after mark is used to expose, can confirm the positional precision accurately of source electrode and contact hole.
In addition, in the present embodiment, because it is corresponding with the light shielding part in component graphics zone on the part of the groove adjacency that when forming gate electrode, is easy to aim at and the gray mask, form in the formation of light shielding part owing to the marker graphic 32 relevant again with gate electrode, so can obtain having possessed the gray mask of the accurately mark relevant with gate electrode, this gate electrode is overlapping with the source electrode and the drain electrode that use gray mask to form.In the present embodiment, form the marker graphic 31 relevant with the transmittance section, form the marker graphic 32 relevant with the transmittance section with gate electrode with light shielding part with contact hole with semi light transmitting part.
In addition, used the manufacture method of TFT substrate of the gray mask of present embodiment for example can enumerate the example that in the method for above-mentioned example 2 in advance, employed gray mask is changed to the gray mask of present embodiment.At this moment, contraposition when being used to expose and the location confirmation after the exposure with the marker graphic relevant of other photomask gray mask of formed alignment mark figure and present embodiment in the formation of gate electrode with gate electrode, contraposition when in addition, the marker graphic relevant with contact hole of the gray mask of present embodiment is used to expose with the alignment mark figure that is used to form the other photomask of contact hole and the location confirmation after the exposure.Manufacture method according to this TFT substrate, under the situation of the contraposition when mark is used to expose, between above-mentioned gray mask and other photomask, can carry out contraposition accurately, under the situation of the location confirmation after mark is used to expose, can confirm the positional precision accurately of source electrode and contact hole.That is to say, between above-mentioned gray mask and other photomask, can carry out contraposition accurately, can realize the positional precision accurately of source electrode and contact hole.
Have, in the present embodiment, employed mask blank also can be the mask blank that has formed buffer film between semi-transparent film 2 and photomask 3 again.Promptly, by the buffer film with etching barrier layer function is set between semi-transparent film 2 and photomask 3, in the 1st time photo-mask process, when removing the photomask in the zone that does not form the resist figure, can prevent the damage of the reduction etc. of the semi-transparent film of lower floor by etching.Like this, by buffer film is set, photomask 3 can be used the similar material of etching characteristic, for example formations such as film of the film of same material or major component identical materials with semi-transparent film 2.Have, the material of buffer film can have from the environment to etching photomask 3 material of tolerance to be selected again.In addition, remove under the situation of the buffer film in the semi light transmitting part at needs, also requiring is that method such as available dry etching is removed and do not damaged the material of the semi-transparent film 2 of substrate.As for example available SiO of buffer film
2Or SOG (spin on glass, spin-coating glass) etc.These materials are constituting with the Cr based material under the situation of photomask, and photomask between desirable high etching selection ratio.In addition, because these material transmittance are good, do not damage its transmissison characteristic even get involved semi light transmitting part yet, thereby can not remove yet, and keep.
In addition, as mask blank, also can be stacked the mask blank of semi-transparent film and photomask, and with having formed the mask blank that its transmissivity has the photomask of thickness interdependence, as the operation (with reference to Fig. 2 (c)) that the etching photomask exposes semi-transparent film, replaceable for photomask is etched into the operation that obtains the such thickness of desirable transmissivity.
In addition, though show each 1 of the marker graphic relevant with gate electrode and contact hole, the location confirmation of the contraposition that when exposure for example also can be set respectively after with mark and exposure is with the mark of multiple purposes such as mark.In addition, the shape of marker graphic also can be not limited to the such shape of diagram, and can at random select and the purpose corresponding shape of mark.
(embodiment 2)
Fig. 4 is the vertical view of the gray mask 20 of embodiment.Outside the component graphics zone, possess marker graphic relevant 31 and the marker graphic 32 relevant with gate electrode with contact hole.Have again, near the vertical view of the figure the source electrode on the expression TFT substrate and the drain electrode and be illustrated in substrate to be copied on the vertical view of formed resist figure owing to identical with above-mentioned Fig. 1, its diagram of Therefore, omited.
Then, with Fig. 5 and Fig. 6 the method for making above-mentioned gray mask is described.
Preparation used mask blank 10 (with reference to Fig. 5 (a)) in embodiment 1.
Then, the eurymeric resist of usefulness is described in coating on mask blank 10, cures, and is formed for forming the resist film 4 (with reference to Fig. 5 (b)) of semi-transparent film pattern.Then, describing machine etc. with electron beam drawing machine or laser describes.This moment describe data be shown in Fig. 1, with source electrode and drain electrode graph of a correspondence data.After describing,, on mask blank, form resist figure 4c (with reference to Fig. 5 (c)) with its development.
Have again, in the present embodiment, because the semi light transmitting part in the component graphics zone on contact hole and the gray mask is corresponding, so for the formation of the marker graphic relevant 31 with contact hole, in above-mentioned operation, be used to form semi-transparent film pattern describe comprise the mark relevant in the data with contact hole, in the etching of the etching of ensuing photomask and semi-transparent film, with the formation of the semi-transparent film pattern in component graphics zone in, also carry out the formation of marker graphic 31.
Then, with formed resist figure 4c as mask, etching photomask 3, the semi-transparent film 2 of etching (with reference to Fig. 5 (c), (d)) then.Residual resist figure 4c utilizes based on the ashing of oxygen or the concentrated sulphuric acid etc. and removes.
Then, the above-mentioned resist of coating on whole forms resist film 4 (with reference to Fig. 5 (e)) again.Then, carrying out the 2nd time describes.The data of describing of this moment are at the opposed part as source electrode and drain electrode shown in Figure 1, the photomask graph data corresponding with the light shielding part of groove adjacency regional 22.After describing, it is developed, be formed for forming the resist figure 4d (with reference to Fig. 6 (f)) of photomask figure.Have again, for the formation of the mark relevant with the aligning of gate electrode, owing to form and obtain relevant mark with the formed film pattern of the most close groove side at source electrode and drain electrode, so in the present embodiment, in above-mentioned operation, be used to form the photomask figure describe comprise the mark relevant in the data with gate electrode, in the etching of ensuing photomask, with the formation of the photomask figure in component graphics zone in, also carry out the formation of marker graphic 32.
Then, as mask, remove the photomask on the semi-transparent film that exposes with formed resist figure 4d by etching.Thus, light shielding part is depicted as semi light transmitting part, forms semi light transmitting part and light shielding part (with reference to Fig. 6 (g)).Then, residual resist figure is removed (with reference to Fig. 6 (h)) with oxygen ashing etc.
Then, the above-mentioned resist of coating on whole forms resist film again, describes, develops, and is formed for removing the resist figure 4e (with reference to Fig. 6 (i)) of the semi-transparent film in the marker graphic relevant with gate electrode 32.Then, remove the semi-transparent film (with reference to Fig. 6 (j)) that in the marker graphic relevant 32, is exposed,, produce the gray mask 20 (with reference to Fig. 6 (k)) of present embodiment by removing residual resist figure 4e with gate electrode by etching.Have again, above-mentioned Fig. 6 (i) though～(k) operation can not implement yet, and by removing the semi-transparent film in the marker graphic relevant with gate electrode 32, owing to obtain the contrast of mark easily, thereby is desirable.
In addition, etching at double light-transmissive film of photomask has under the situation of sufficient tolerance, will the position opening identical by the resist figure 4e (with reference to Fig. 6) of the semi-transparent film that is used for removing marker graphic 32 not being formed shown in Fig. 6 (i) with marker graphic 32, and form and will comprise the big regional opening of marker graphic 32, even be used to form the offset of describing of resist figure 4e, do not become problem yet.In addition, have under the situation of sufficient tolerance, also can not form resist figure 4e and remove the semi-transparent film that in marker graphic 32, is exposed partly in the etching of double light-transmissive film of photomask.
The gray mask of present embodiment is in its manufacturing process, after having formed semi-transparent film pattern, form on the photomask figure this point different with above-mentioned embodiment 1, but because the marker graphic 31 relevant with contact hole forms in the formation of semi light transmitting part, the marker graphic 32 relevant with gate electrode forms in the formation of light shielding part, so can obtain having possessed the gray mask of the accurately mark relevant with the figure of gate electrode and contact hole etc.In addition, in the present embodiment, owing to form the marker graphic 31 relevant,, can obtain high contrast so compare with the marker graphic 31 in the mask of above-mentioned embodiment 1 with contact hole with light shielding part and transmittance section.In addition, in the present embodiment, also available and embodiment 1 identical method is made the TFT substrate, under the situation of embodiment 1 contraposition when mark is used to expose similarly, between above-mentioned gray mask and other photomask, can carry out contraposition accurately, under the situation of the location confirmation after mark is used to expose, can confirm the positional precision accurately of source electrode and contact hole.
Have, in the present embodiment, and embodiment 1 similarly also can use the mask blank that has formed buffer film between semi-transparent film 2 and photomask 3 again.
In addition, as mask blank, also can be stacked the mask blank of semi-transparent film and photomask, and with having formed the mask blank that its transmissivity has the photomask of thickness interdependence, as the operation (with reference to Fig. 6 (g)) that the etching photomask exposes semi-transparent film, replaceable for photomask is etched into the operation that obtains the such thickness of desirable transmissivity.
(embodiment 3)
Below, the manufacture method of the gray mask 20 of present embodiment is described with Fig. 8 and Fig. 9.
In the present embodiment, at first, shown in Fig. 8 (a), use the mask blank 11 that on the transparency carrier 1 identical, has formed photomask 3 with embodiment 1.
The eurymeric resist of usefulness is described in coating on this mask blank, cures, and is formed for forming the resist film 4 (with reference to Fig. 8 (b)) of photomask figure.Then, describing machine etc. with electron beam drawing machine or laser describes.The data of describing of this moment are the opposed part as source electrode and drain electrode shown in Fig. 1, the photomask graph data corresponding with the light shielding part of groove adjacency regional 22.After describing, it is developed, be formed for forming the resist figure 4f (with reference to Fig. 8 (c)) of photomask figure.
Then, as mask, wet method or dry etching photomask 3 form and light shielding part graph of a correspondence 3d (with reference to Fig. 8 (d)) with formed resist figure 4f.Under the situation that photomask 3 is made of the Cr based material, in wet etching, for example ammonium ceric nitrate can be mixed with peroxy salt, carry out wet etching with the etching liquid etc. after the dilution, in dry etching, can use to comprise Cl
2+ O
2Deng chlorine is the dry etching gas of gas.Residual resist figure 4f uses based on the ashing of oxygen or the concentrated sulphuric acid etc. and removes.Have again, for the formation of the mark relevant with the aligning of gate electrode, in the present embodiment, in above-mentioned operation, be used to form the photomask figure describe comprise the mark relevant in the data with gate electrode, with the formation of the photomask figure in component graphics zone in, also carry out the formation (with reference to Fig. 8 (c), (d)) of marker graphic 32.
Then, on whole, form semi-transparent film 2 (with reference to Fig. 8 (e)).Then, on semi-transparent film 2, apply resist, be formed for forming the resist film 4 (with reference to Fig. 9 (f)) of semi-transparent film pattern.Then, carrying out the 2nd time describes.The data of describing of this moment are in shown in Figure 1 and source electrode and drain electrode graph of a correspondence data.After describing, it is developed, be formed for forming the resist figure 4g (with reference to Fig. 9 (g)) of semi-transparent film pattern.Have again, in the present embodiment, because the semi light transmitting part in the component graphics zone on contact hole and the gray mask is corresponding, so for the formation of the marker graphic relevant 31 with contact hole, in above-mentioned operation, be used to form semi-transparent film pattern describe comprise the mark relevant in the data with contact hole, in the etching of ensuing semi-transparent film, with the formation of the semi-transparent film pattern in component graphics zone in, also carry out the formation of marker graphic 31.
Then, as mask, remove the semi-transparent film 2 in the zone that becomes the transmittance section with formed resist figure 4g with wet method or dry etching.Thus, the semi light transmitting part in component graphics zone is depicted as the transmittance section, forms semi light transmitting part and transmittance section (with reference to Fig. 9 (h)).Have, residual resist figure is removed (with reference to Fig. 9 (i)) with oxygen ashing etc. again.
In the gray mask of present embodiment, because the marker graphic 31 relevant with contact hole forms in the formation of semi light transmitting part, the marker graphic 32 relevant with gate electrode forms in the formation of light shielding part, so can obtain having possessed the gray mask of the accurately mark relevant with the figure of gate electrode and contact hole etc.Have, in the present embodiment, marker graphic 31 usefulness semi light transmitting part relevant with contact hole and transmittance section form again, and marker graphic 32 usefulness light shielding parts relevant with gate electrode and semi light transmitting part form.
In addition, in the present embodiment, also available and embodiment 1 identical method is made the TFT substrate, under the situation of embodiment 1 contraposition when mark is used to expose similarly, between above-mentioned gray mask and other photomask, can carry out contraposition accurately, under the situation of the location confirmation after mark is used to expose, can confirm the positional precision accurately of source electrode and contact hole.
Have, in the present embodiment, also combination of materials that can the photomask 3 and the etching selection of semi-transparent film 2 is little together again.
(embodiment 4)
Present embodiment is to adopt the example of the gray mask identical with embodiment 3 diverse ways manufacturings and embodiment 3.
Below, describe with Figure 10 and Figure 11.
Shown in Figure 10 (a), prepare mask blank 11 used in embodiment 3.
The eurymeric resist of usefulness is described in coating on this mask blank, cures, and is formed for forming the resist film 4 (with reference to Figure 10 (b)) of photomask figure.Then, describe machine etc. with electron beam drawing machine or laser and describe, it is developed, be formed for forming the resist figure 4h (with reference to Figure 10 (c)) of photomask figure.
Then, as mask, wet method or dry etching photomask 3 form and light shielding part graph of a correspondence 3e (with reference to Figure 10 (d)) with formed resist figure 4h.Residual resist figure 4h uses based on the ashing of oxygen or the concentrated sulphuric acid etc. and removes.Have again, for the formation of the mark relevant with gate electrode, in above-mentioned operation, be used to form the photomask figure describe comprise the mark relevant in the data with gate electrode, with the formation of the photomask figure in component graphics zone in, also carry out the formation (with reference to Figure 10 (c), (d)) of marker graphic 32.
Then, cover the formation zone (component graphics that is generally mask forms the periphery beyond the zone) of marker graphic 31,32 at least, form semi-transparent film 2 (with reference to Figure 10 (e)) with shield 50.Then, on whole, apply resist, be formed for forming the resist film 4 (with reference to Figure 11 (f)) of semi-transparent film pattern.Then, carry out the 2nd time and describe, it is developed, be formed for forming the resist figure 4i (with reference to Figure 11 (g)) of semi-transparent film pattern.Have again, because the semi light transmitting part in the component graphics zone on contact hole and the gray mask is corresponding, so for the formation of the marker graphic relevant 31 with contact hole, in above-mentioned operation, be used to form semi-transparent film pattern describe comprise the mark relevant in the data with contact hole, similarly also carrying out the formation of marker graphic 31 with the formation of the semi-transparent film pattern in component graphics zone.
Then, with formed resist figure 4i as mask, the semi-transparent film 2 in the zone that utilizes wet method or dry etching to remove to become the transmittance section.Thus, the semi light transmitting part in component graphics zone is depicted as the transmittance section, forms semi light transmitting part and transmittance section (with reference to Figure 11 (h)).Residual resist figure is removed (with reference to Figure 11 (i)) with oxygen ashing etc.
Have again, in the etching procedure of above-mentioned Figure 11 (h), because the formation of the mark 31 relevant with contact hole is by carrying out as mask etching photomask 3e with resist figure 4i, so in the environment of the semi-transparent film 2 of etching, the etching speed of photomask 3e is slower than the etching speed of semi-transparent film 2, etching at semi-transparent film 2 finishes, and under the still unclosed situation of the etching of photomask 3e, also can only carry out the etching of appending of photomask 3e.For example, can enumerate shown in Figure 11 (h '), under the state that mask substrate is tilted, only above-mentioned marker graphic 31 be formed the method for part spray etch liquid with nozzle 51.
In the gray mask of present embodiment, also can obtain having possessed the gray mask of the accurate mark relevant with the figure of gate electrode and contact hole etc.In addition, in the present embodiment because the marker graphic 31 relevant with contact hole and with the relevant marker graphic 32 of gate electrode in all with light shielding part and transmittance section formation, so can improve the contrast of the marker graphic in the mask of above-mentioned embodiment 3.
(embodiment 5)
Figure 12 (a) is the vertical view of the gray mask 20 of present embodiment, (b) is the source electrode on the expression TFT substrate and near the vertical view of the figure 34 the drain electrode, (c) is the vertical view of formed resist figure on the expression substrate to be copied.
Shown in Figure 12 (b), in the present embodiment, component graphics 34 has at the regional formed semi-transparent film pattern 21 corresponding with source electrode and drain electrode, and form in the zone corresponding with the opposed part of source electrode and drain electrode and be formed at photomask figure 22 on the above-mentioned semi-transparent film pattern 21 vacating 24 ground, desirable surplus zone with corresponding transmittance section 23 sides of groove.That is, photomask figure 22 and semi-transparent film pattern 21 stacked parts are light shielding part, and the zone that has formed the semi-transparent film beyond the light shielding part is a semi light transmitting part, and neither forming the zone that semi-transparent film 21 do not form photomask 22 again is the transmittance section.Thereby, in the present embodiment, the component graphics of source electrode and drain electrode is with corresponding with the semi light transmitting part on the gray mask with the overlapping part of the contact hole (H) of other photomask formation, among the component graphics of source electrode and drain electrode and the overlapping part of the gate electrode (G) that forms with other photomask, with the part of the groove adjacency that is easy to aim at when the formation gate electrode (G) also with gray mask on semi light transmitting part corresponding.
In the present embodiment, outside the component graphics zone of mask 20, possesses marker graphic 33, marker graphic that these marker graphic 33 dual-purposes are relevant with above-mentioned contact hole and the marker graphic relevant with above-mentioned gate electrode.With the formation of semi light transmitting part in form under the situation of the marker graphic relevant with above-mentioned contact hole, also can hold concurrently is the marker graphic relevant with above-mentioned gate electrode.
Then, with Figure 13 and Figure 14 the method for making above-mentioned gray mask is described.
Shown in Figure 13 (a), prepare mask blank 11 used in embodiment 3.
The eurymeric resist of usefulness is described in coating on this mask blank, cures, and is formed for forming the resist film 4 (with reference to Figure 13 (b)) of photomask figure.Then, describing machine etc. with electron beam drawing machine or laser describes.This moment describe the graph data that data are the opposed part at source electrode and drain electrode shown in Figure 12 (b), the photomask figure 22 corresponding with the position of having vacated desirable surplus zone in the groove side.After describing, it is developed, on mask blank, form the resist figure 4j (with reference to Figure 13 (c)) corresponding with light shielding part.Have, consider the alignment precision of describing for 2 times, the big width from the groove side of deviation of the alignment than supposition is preferably got in this surplus zone, under the situation of present embodiment, preferably gets the surplus zone of 0.1～1 μ m left and right sides width.
Then, as mask, wet method or dry etching photomask 3 form and light shielding part graph of a correspondence 3f (with reference to Figure 13 (d)) with formed resist figure 4j.Residual resist figure 4j uses based on the ashing of oxygen or the concentrated sulphuric acid etc. and removes.
Then, on whole, form semi-transparent film 2 (with reference to Figure 13 (e)).Then, on semi-transparent film 2, apply resist, be formed for forming the resist film 4 (with reference to Figure 14 (f)) of semi-transparent film pattern.Then, carrying out the 2nd time describes.This moment describe data be shown in Figure 12 (b) with source electrode and drain electrode graph of a correspondence data.After describing, it is developed, be formed for forming the resist figure 4k (with reference to Figure 14 (g)) of semi-transparent film pattern.In the present embodiment, because the semi light transmitting part in the component graphics zone on contact hole and the gray mask is corresponding, so for the formation of the marker graphic relevant 33 with contact hole, in above-mentioned operation, be used to form semi-transparent film pattern describe comprise the mark relevant in the data with contact hole, in the etching of ensuing semi-transparent film, with the formation of the semi-transparent film pattern in component graphics zone in, also carry out the formation of marker graphic 33.In addition, since with the part of the groove adjacency that when forming gate electrode, is easy to aim at also with gray mask on semi light transmitting part corresponding, so with the formation of above-mentioned semi-transparent film pattern in formed above-mentioned marker graphic 33 also can hold concurrently and be the marker graphic relevant with gate electrode.
Then, with formed resist figure 4k as mask, the semi-transparent film 2 in the zone that utilizes wet method or dry etching to remove to become the transmittance section.Thus, the semi light transmitting part in component graphics zone is depicted as the transmittance section, forms semi light transmitting part and transmittance section (with reference to Figure 14 (h)).Residual resist figure is removed (with reference to Figure 14 (i)) with oxygen ashing etc.
In the present embodiment, because contact hole is corresponding with the semi light transmitting part on the gray mask, with the part of the groove adjacency that when forming gate electrode, is easy to aim at also with gray mask on semi light transmitting part corresponding, so with the formation of semi light transmitting part in the formed marker graphic 33 relevant with contact hole also can to hold concurrently be the marker graphic relevant with gate electrode, obtain having possessed the gray mask of the accurate mark relevant with the figure of gate electrode and contact hole etc.In the present embodiment, form above-mentioned marker graphic 33 with semi light transmitting part and transmittance section.When making the TFT substrate with the gray mask of present embodiment, under the situation of the contraposition when mark is used to expose, between above-mentioned gray mask and other photomask, can carry out contraposition accurately, under the situation of the location confirmation after mark is used to expose, can confirm the positional precision accurately of source electrode and contact hole.
Have again, in the present embodiment, the situation that used mask blank 11 carries out the mask manufacturing in embodiment 3 of using has been described, but be not limited thereto, use used mask blank 10 that has formed semi-transparent film 2 and photomask 3 on transparency carrier 1 in above-mentioned embodiment 1 also can similarly obtain the mask of present embodiment.
(embodiment 6)
Present embodiment is to use the mask blank identical with embodiment 5, and with the example of the identical gray mask of diverse ways manufacturing and embodiment 5.
Below, describe with Figure 15 and Figure 16.
Shown in Figure 15 (a), prepare mask blank 11 used in embodiment 5.
The eurymeric resist of usefulness is described in coating on this mask blank, cures, and is formed for forming the resist film 4 (with reference to Figure 15 (b)) of photomask figure.Then, describe machine etc. with electron beam drawing machine or laser and describe, it is developed, be formed for forming the resist figure 4m (with reference to Figure 15 (c)) of photomask figure.
Then, as mask, wet method or dry etching photomask 3 form and light shielding part graph of a correspondence 3g (with reference to Figure 15 (d)) with formed resist figure 4m.Residual resist figure 4m uses based on the ashing of oxygen or the concentrated sulphuric acid etc. and removes.
Then, on whole, form semi-transparent film 2 (with reference to Figure 15 (e)).Then, on whole, apply resist, be formed for forming the resist film 4 (with reference to Figure 16 (f)) of semi-transparent film pattern.Then, carry out the 2nd time and describe, it is developed, be formed for forming the resist figure 4n (with reference to Figure 16 (g)) of semi-transparent film pattern.Have again, for the formation of the marker graphic relevant 33 with contact hole, in above-mentioned operation, be used to form semi-transparent film pattern describe comprise the mark relevant in the data with contact hole, in the etching of ensuing semi-transparent film, with the formation of the semi-transparent film pattern in component graphics zone in, also carry out the formation of marker graphic 33.As mentioned above, since with the part of the groove adjacency that when forming gate electrode, is easy to aim at also with gray mask on semi light transmitting part corresponding, so with the formation of above-mentioned semi-transparent film pattern in formed above-mentioned marker graphic 33 also can hold concurrently and be the marker graphic relevant with gate electrode.
Then, with formed resist figure 4n as mask, the semi-transparent film 2 in the zone that utilizes wet method or dry etching to remove to become the transmittance section.Thus, the semi light transmitting part in component graphics zone is depicted as the transmittance section, forms semi light transmitting part and transmittance section (with reference to Figure 16 (h)).Residual resist figure is removed (with reference to Figure 16 (i)) with oxygen ashing etc.
Have again, in the etching procedure of above-mentioned Figure 16 (h), since the formation of above-mentioned marker graphic 33 by with resist figure 4n as the semi-transparent film 2 of mask etching, then etching photomask 3g carries out, so also can be only the photomask 3g of marker graphic 33 parts be appended etching.
In the present embodiment, can obtain having possessed the gray mask of the accurate mark relevant with the figure of gate electrode and contact hole etc.Have again, in the present embodiment, because the marker graphic 33 usefulness light shielding parts and the transmittance section formation of the dual-purpose marker graphic relevant and the marker graphic of being correlated with, so can improve the contrast of the marker graphic in the mask of above-mentioned embodiment 5 with gate electrode with above-mentioned contact hole.
(embodiment 7)
Figure 17 (a) is the vertical view of the gray mask 20 of present embodiment, (b) is the source electrode on the expression TFT substrate and near the vertical view of the component graphics 30 the drain electrode, (c) is the vertical view of formed resist figure on the expression substrate to be copied.Shown in Figure 17 (b), in the present embodiment, component graphics 30 is identical with above-mentioned embodiment 1 etc.
In the present embodiment, the marker graphic that marker graphic 35 that had, relevant with gate electrode is held concurrently and is correlated with for contact hole outside the component graphics zone of mask.
Then, with Figure 18 and Figure 19 the method for making above-mentioned gray mask is described.
Shown in Figure 18 (a), prepare mask blank 10 used in embodiment 1.
Then, the eurymeric resist of usefulness is described in coating on this mask blank, cures, and is formed for forming the resist film 4 (with reference to Figure 18 (b)) of photomask figure.Then, describing machine etc. with electron beam drawing machine or laser describes.This moment describe the graph data that data are the opposed part as source electrode and drain electrode shown in Figure 17 (b), the photomask figure corresponding with the light shielding part of groove adjacency regional 22.After describing, it is developed, on mask blank, form the resist figure 4p (with reference to Figure 18 (c)) corresponding with light shielding part.
Then, as mask, etching photomask 3 forms the photomask figure 3h corresponding with light shielding part (with reference to Figure 18 (c)) with formed resist figure 4p.Residual resist figure 4p uses based on the ashing of oxygen or the concentrated sulphuric acid etc. and removes (with reference to Figure 18 (d)).
Have, in the present embodiment, contact hole is corresponding with the semi light transmitting part on the gray mask again, and with form the marker graphic relevant, the position offset of this mark grasp and semi-transparent film pattern when above-mentioned photomask figure forms with contact hole.In addition, since corresponding with the part of the groove adjacency that when forming gate electrode, is easy to aim at the light shielding part on the gray mask, so also can holding concurrently, this marker graphic is the marker graphic relevant with gate electrode.Thereby, in the present embodiment, in above-mentioned operation, be used to form photomask figure 3h describe comprise the dual-purpose mark relevant in the data and the mark of relevant mark with gate electrode with contact hole, with the formation of the photomask figure in component graphics zone in, also carry out the formation (with reference to Figure 18 (c), (d)) of the marker graphic 35 of above-mentioned dual-purpose.
Then, the above-mentioned resist of coating on whole forms resist film 4 (with reference to Figure 18 (e)) again.Then, carrying out the 2nd time describes.This moment describe data be shown in Figure 17 (b) with source electrode and drain electrode graph of a correspondence data.After describing, it is developed, be formed for forming the resist figure 4q (with reference to Figure 19 (f)) of semi-transparent film pattern.
Then, as mask, remove the semi-transparent film 2 in the zone that becomes the transmittance section by etching, form semi-transparent film pattern 2h with formed resist figure 4q.Thus, semi light transmitting part is depicted as the transmittance section, forms semi light transmitting part and transmittance section (with reference to Figure 19 (g)).Residual resist figure is removed (with reference to Figure 19 (h)) with oxygen ashing etc.
In the present embodiment, contact hole is corresponding with the semi light transmitting part on the gray mask, and by with form the marker graphic relevant when the photomask figure forms with contact hole, this mark is grasped the position offset with semi-transparent film pattern, as the performance function of the accurate mark relevant with contact hole.In addition, because corresponding with the light shielding part on the gray mask with the part of the groove adjacency that when forming gate electrode, is easy to aim at, thus form when forming this photomask figure, grasped also can hold concurrently and be the marker graphic relevant with gate electrode with the marker graphic of the position offset of semi-transparent film pattern.Thereby, obtain having possessed the gray mask of the accurate marker graphic 35 relevant with the figure of gate electrode and contact hole etc.
In addition, in the present embodiment, also available and embodiment 1 same method is made the TFT substrate.At this moment, when the contraposition of the formed marker graphic relevant of the gray mask of using present embodiment and the alignment mark figure of the other photomask that is used to form contact hole or location confirmation, can will proofread and correct the position of position offset of the marker graphic of grasping in advance as the position of marker graphic with contact hole.Consequently, with embodiment 1 similarly, under the situation of the contraposition when mark is used to expose, between above-mentioned gray mask and other photomask, can carry out contraposition accurately, under the situation of the location confirmation after mark is used to expose, can confirm the positional precision accurately of source electrode and contact hole.
In the present embodiment, above-mentioned marker graphic 35 usefulness photomasks form, owing to form with light shielding part and transmittance section, obtain the contrast of mark easily.In addition, for example available process number that lacks than above-mentioned embodiment 2 obtains the high mark of contrast.
Have again, in the present embodiment, illustrated will with the formation of light shielding part in formed marker graphic position offset, relevant with contact hole of having grasped semi light transmitting part and light shielding part be formed on the mask, and it can also be held concurrently and is the situation of the marker graphic relevant with gate electrode, but be not limited to this embodiment, for example by make with the formation of semi light transmitting part in marker graphic position offset, relevant with gate electrode formed, that grasped light shielding part and semi light transmitting part be formed on the mask, also can hold concurrently is the marker graphic relevant with contact hole.
Claims (3)
1. gray mask that is used to make liquid crystal indicator, it is characterized in that, this gray mask is by having semi-transparent film pattern and vacating the regional photomask figure that is formed on the above-mentioned semi-transparent film pattern of surplus in the transmittance section side on the transparency carrier, have thus: the light shielding part that photomask figure and semi-transparent film pattern are laminated, the semi light transmitting part that is formed with semi-transparent film except that light shielding part, and not only do not formed semi-transparent film but also do not formed the transmittance section of photomask;
This gray mask has the marker graphic with the formation contraposition that form simultaneously, when being used to expose of above-mentioned semi-transparent film pattern.
2. gray mask according to claim 1, wherein,
The formation of above-mentioned marker graphic is by coming the semi-transparent film of etching to carry out with the resist figure as mask, this resist figure be by be used to form above-mentioned semi-transparent film pattern describe comprise marker graphic in the data and form.
3. gray mask according to claim 1, wherein, the formation of above-mentioned marker graphic is by coming semi-transparent film of etching and photomask to carry out with the resist figure as mask, this resist figure be by be used to form above-mentioned semi-transparent film pattern describe comprise marker graphic in the data and form.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005-082500 | 2005-03-22 | ||
| JP2005082500A JP4693451B2 (en) | 2005-03-22 | 2005-03-22 | Method for manufacturing gray tone mask and method for manufacturing thin film transistor substrate |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2006100654561A Division CN1837956B (en) | 2005-03-22 | 2006-03-22 | Graytone mask and film transistor substrate manufacturing method |
Publications (1)
| Publication Number | Publication Date |
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| CN101833236A true CN101833236A (en) | 2010-09-15 |
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Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
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| CN201010189553A Pending CN101833236A (en) | 2005-03-22 | 2006-03-22 | Gray mask |
| CN2006100654561A Expired - Fee Related CN1837956B (en) | 2005-03-22 | 2006-03-22 | Graytone mask and film transistor substrate manufacturing method |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2006100654561A Expired - Fee Related CN1837956B (en) | 2005-03-22 | 2006-03-22 | Graytone mask and film transistor substrate manufacturing method |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP4693451B2 (en) |
| KR (1) | KR101016464B1 (en) |
| CN (2) | CN101833236A (en) |
| TW (1) | TW200702935A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102789126A (en) * | 2011-03-02 | 2012-11-21 | 株式会社东芝 | Photomask and method for manufacturing the same |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4809752B2 (en) * | 2006-11-01 | 2011-11-09 | 株式会社エスケーエレクトロニクス | Halftone photomask and method for manufacturing the same |
| JP5044262B2 (en) * | 2007-04-10 | 2012-10-10 | 株式会社エスケーエレクトロニクス | Multi-tone photomask and manufacturing method thereof |
| JP5089362B2 (en) * | 2007-12-13 | 2012-12-05 | 信越化学工業株式会社 | Photomask and exposure method |
| KR101295235B1 (en) * | 2008-08-15 | 2013-08-12 | 신에쓰 가가꾸 고교 가부시끼가이샤 | Gray tone mask blank, gray tone mask, and method for forming product processing mark or product information mark |
| WO2010110237A1 (en) * | 2009-03-26 | 2010-09-30 | Hoya株式会社 | Substrate provided with multilayer reflection film for reflective mask, reflective mask blank, and methods for manufacturing the substrate and the mask blank |
| JP2011186506A (en) * | 2011-07-01 | 2011-09-22 | Sk Electronics:Kk | Halftone photomask |
| WO2014103875A1 (en) * | 2012-12-27 | 2014-07-03 | アルバック成膜株式会社 | Phase shift mask and method for producing same |
| JP2015212720A (en) * | 2014-05-01 | 2015-11-26 | Hoya株式会社 | Method of producing multi-gradation photo mask, the multi-gradation photo mask, and method of producing display device |
| TWI710850B (en) * | 2018-03-23 | 2020-11-21 | 日商Ｈｏｙａ股份有限公司 | Photomask, photomask blank, method of manufacturing a photomask, and method of manufacturing an electronic device |
| JP7314523B2 (en) * | 2019-02-14 | 2023-07-26 | 大日本印刷株式会社 | Photomasks and photomask blanks for laser exposure |
| US20220390833A1 (en) * | 2021-06-03 | 2022-12-08 | Viavi Solutions Inc. | Method of replicating a microstructure pattern |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR0149221B1 (en) * | 1994-06-27 | 1999-02-01 | 김주용 | Photo mask for fabricating semiconductor |
| JP2002189281A (en) * | 2000-12-19 | 2002-07-05 | Hoya Corp | Gray tone mask and method for producing the same |
| JP2002189282A (en) * | 2000-12-21 | 2002-07-05 | Hitachi Ltd | Halftone phase shift mask and method for producing semiconductor device using the same |
| JP4410951B2 (en) * | 2001-02-27 | 2010-02-10 | Ｎｅｃ液晶テクノロジー株式会社 | Pattern forming method and manufacturing method of liquid crystal display device |
| KR100390801B1 (en) * | 2001-05-24 | 2003-07-12 | 엘지.필립스 엘시디 주식회사 | Manufacturing method for half tone photo mask |
| JP2003255510A (en) * | 2002-03-01 | 2003-09-10 | Hitachi Ltd | Method for manufacturing electronic device |
| JP2004341139A (en) * | 2003-05-14 | 2004-12-02 | Canon Inc | Gray tone mask and its manufacturing method |
| JP4393290B2 (en) * | 2003-06-30 | 2010-01-06 | Ｈｏｙａ株式会社 | Method for manufacturing gray tone mask and method for manufacturing thin film transistor substrate |
| JP4210166B2 (en) * | 2003-06-30 | 2009-01-14 | Ｈｏｙａ株式会社 | Gray-tone mask manufacturing method |
| JP4108662B2 (en) * | 2004-10-04 | 2008-06-25 | Ｎｅｃ液晶テクノロジー株式会社 | Thin film semiconductor device manufacturing method, resist pattern forming method, and photomask used in these methods |
-
2005
- 2005-03-22 JP JP2005082500A patent/JP4693451B2/en active Active
-
2006
- 2006-03-20 TW TW095109428A patent/TW200702935A/en unknown
- 2006-03-22 CN CN201010189553A patent/CN101833236A/en active Pending
- 2006-03-22 CN CN2006100654561A patent/CN1837956B/en not_active Expired - Fee Related
- 2006-03-22 KR KR1020060026088A patent/KR101016464B1/en not_active IP Right Cessation
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102789126A (en) * | 2011-03-02 | 2012-11-21 | 株式会社东芝 | Photomask and method for manufacturing the same |
| US8778570B2 (en) | 2011-03-02 | 2014-07-15 | Kabushiki Kaisha Toshiba | Photomask and method for manufacturing the same |
| CN102789126B (en) * | 2011-03-02 | 2016-04-13 | 株式会社东芝 | Photomask and manufacture method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2006267262A (en) | 2006-10-05 |
| CN1837956A (en) | 2006-09-27 |
| CN1837956B (en) | 2010-10-20 |
| KR101016464B1 (en) | 2011-02-24 |
| KR20060102524A (en) | 2006-09-27 |
| TW200702935A (en) | 2007-01-16 |
| JP4693451B2 (en) | 2011-06-01 |
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Open date: 20100915 |