CN101819362B - TFT-LCD (Thin Film Transistor Liquid Crystal Display) array substrate and manufacture method thereof - Google Patents
TFT-LCD (Thin Film Transistor Liquid Crystal Display) array substrate and manufacture method thereof Download PDFInfo
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- CN101819362B CN101819362B CN 200910078642 CN200910078642A CN101819362B CN 101819362 B CN101819362 B CN 101819362B CN 200910078642 CN200910078642 CN 200910078642 CN 200910078642 A CN200910078642 A CN 200910078642A CN 101819362 B CN101819362 B CN 101819362B
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- 239000010409 thin film Substances 0.000 title abstract description 15
- 239000004973 liquid crystal related substance Substances 0.000 title abstract 2
- 239000000203 mixture Substances 0.000 claims abstract description 93
- 238000002161 passivation Methods 0.000 claims abstract description 42
- 238000000151 deposition Methods 0.000 claims abstract description 15
- 229920002120 photoresistant polymer Polymers 0.000 claims description 146
- 238000005516 engineering process Methods 0.000 claims description 102
- 230000004888 barrier function Effects 0.000 claims description 64
- 238000005530 etching Methods 0.000 claims description 34
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- 239000011521 glass Substances 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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Abstract
The invention relates to a TFT-LCD (Thin Film Transistor Liquid Crystal Display) array substrate and a manufacture method thereof. The array substrate comprises a grid line and a data line which are formed on the substrate, wherein a pixel electrode and a thin film transistor are formed in a pixel region limited by the grid line and the data line; and a shielding layer for shielding a light leak region is formed above the data line. The manufacture method comprises the following steps of: forming a graph comprising the grid line and a grid electrode; forming a graph comprising the data line, a drain electrode, a source electrode and a TFT channel; forming a graph comprising a passivation layer via hole; depositing a transparent conductive thin film and a shading metal thin film; and forming a graph comprising the pixel electrode and the shielding layer through a picture composition process, wherein the pixel electrode is connected with the drain electrode through the passivation layer via hole, and the shielding layer is arranged above the data line. Through forming the shielding layer above the data line, when a color film substrate and the array substrate cannot be accurately aligned or are impacted by external force, the shielding layer has the effect of shielding light of a black matrix and can completely shield light leaks from the front surface and effectively stop the light leaks from a side surface.
Description
Technical field
The present invention relates to a kind of LCD Structure of thin film transistor and manufacture method thereof, especially a kind of TFT-LCD array base palte and manufacture method thereof.
Background technology
Thin Film Transistor-LCD (Thin Film Transistor Liquid CrystalDisplay, abbreviation TFT-LCD) has characteristics such as volume is little, low in energy consumption, radiationless, obtained in recent years developing by leaps and bounds, in current flat panel display market, occupied leading position.
The agent structure of TFT-LCD comprises the array base palte of box and color membrane substrates, sticks the orthogonal polaroid in polarization direction on the two substrates respectively.The thin film transistor (TFT) and the pixel electrode that wherein are formed with grid line, data line on the array base palte and arrange with matrix-style, color membrane substrates (also claims colored filter, is formed with black matrix, color resin and public electrode on ColorFilter).The fundamental purpose that black matrix is set on the color membrane substrates is to isolate color resin (red resin, blue resins and green resin), blocks the light in light leak zone simultaneously.At present in the design, black arranged in matrix is on color membrane substrates, its position is corresponding with array base palte grid line, data line and thin film transistor (TFT), after color membrane substrates and array base palte are accurately to box, black matrix can shelter from and pass grid line and the data line light of outgoing at any angle, thereby realizes preventing the purpose of light leak.
In the actual production process, because equipment precision and process conditions restriction, color membrane substrates and array base palte are difficult to accurately contraposition, make black matrix position off-design position.In actual the use, when color membrane substrates or array base palte are subjected to external impacts, black matrix position is departed from.Above-mentioned two kinds of situations all can cause the light leak defective, and when serious, side light leak and front light leak exist simultaneously, have had a strong impact on display performance.In order to solve the light leak defective, prior art adopts the solution that strengthens black matrix width usually, but the black matrix of broad can block the viewing area, has reduced aperture opening ratio and the display brightness of TFT-LCD.
Summary of the invention
The purpose of this invention is to provide a kind of TFT-LCD array base palte and manufacture method thereof, under the prerequisite that guarantees aperture opening ratio and display brightness, effectively solve the light leak defective.
To achieve these goals, the invention provides a kind of TFT-LCD array base palte, comprise the grid line and the data line that are formed on the substrate, form pixel electrode and thin film transistor (TFT) in the pixel region that described grid line and data line limit, described data line top is formed with the barrier bed that blocks the light leak zone.
The both sides of described data line also are provided with shield bars, and the edge of described barrier bed both sides is positioned at the zone that described shield bars blocks.
Described barrier bed and pixel electrode are forming with in a composition technology.
To achieve these goals, the present invention also provides a kind of TFT-LCD manufacturing method of array base plate, comprising:
Also be formed with shield bars in the described step 1 simultaneously.
The edge of described barrier bed both sides is positioned at the zone that described shield bars blocks.
Described step 4 can comprise:
On the substrate of completing steps 3, adopt the method for magnetron sputtering or thermal evaporation, successively deposit transparent conductive film and shading metallic film;
On described shading metallic film, apply one deck photoresist;
Adopt the exposure of half rank or gray-tone mask plate, make the complete reserve area of photoresist formation photoresist, photoresist remove zone and photoresist half reserve area fully, the complete reserve area of photoresist is corresponding to barrier bed figure region, photoresist half reserve area is corresponding to pixel electrode figure region, and photoresist is removed the zone fully corresponding to the zone beyond the above-mentioned figure; After the development treatment, the photoresist thickness of the complete reserve area of photoresist does not change, and photoresist is removed the photoresist in zone fully and removed the photoresist thickness attenuation of photoresist half reserve area fully;
By the first time etching technics etch away shading metallic film and the transparent conductive film that photoresist is removed the zone fully fully, form the barrier bed figure, described barrier bed is positioned at the top of data line;
By cineration technics, remove the photoresist of photoresist half reserve area, expose this regional shading metallic film;
By the second time etching technics etch away the shading metallic film of photoresist half reserve area fully, expose the transparent conductive film of its below, form the pixel electrode figure, pixel electrode is connected with drain electrode by passivation layer via hole;
Peel off remaining photoresist.
Described step 4 also can comprise:
On the substrate of completing steps 3, adopt the method for magnetron sputtering or thermal evaporation, the deposit transparent conductive film;
On described transparent conductive film, apply one deck photoresist;
Adopt the exposure of normal masks plate, make photoresist formation complete reserve area of photoresist and photoresist remove the zone fully, the complete reserve area of photoresist is corresponding to the pixel electrode region, and photoresist is removed the zone fully corresponding to the zone beyond the pixel electrode figure; After the development treatment, the photoresist thickness of the complete reserve area of photoresist does not change, and photoresist is removed the photoresist in zone fully and removed fully;
Etch away the transparent conductive film that photoresist is removed the zone fully fully by etching technics, form the pixel electrode figure, pixel electrode is connected with drain electrode by passivation layer via hole;
On formation pixel electrode and pixel electrode, remain with on the substrate of photoresist, adopt the method for magnetron sputtering or thermal evaporation, deposition shading metallic film, described shading metallic film ruptures at the photoresist fringe region;
Adopt liftoff stripping technology stripping photoresist, the shading metallic film on the stripping photoresist forms the barrier bed figure simultaneously, and described barrier bed figure is positioned at the top of data line.
Described etching technics is wet etching and adopted the mode at quarter, etches away the transparent conductive film of photoresist fringe region below.The thickness of described shading metallic film is
The invention provides a kind of TFT-LCD array base palte and manufacture method thereof,, under the prerequisite that guarantees aperture opening ratio and display brightness, effectively solve the light leak defective by above data line, forming barrier bed.Because barrier bed of the present invention is arranged on the array base palte, therefore no matter be color membrane substrates and accurately contraposition of array base palte, still color membrane substrates or array base palte are subjected to external impacts, though the black matrix on the color membrane substrates lost efficacy at this moment, but barrier bed of the present invention can play the interception of black matrix, be not subjected to contraposition and shock effect, can stop the front light leak fully, effectively stop the side light leak.Further, adopt the solution that strengthens black matrix width to compare with prior art, because barrier bed of the present invention can effectively be eliminated the light leak that bit errors causes, therefore the present invention can reduce the width of black matrix on the color membrane substrates to greatest extent, improves aperture opening ratio and the display brightness of TFT-LCD effectively.In addition, the TFT-LCD array base palte that the present invention is formed with barrier bed still adopts existing process equipment and condition preparation, under the prerequisite that does not increase composition technology, has improved TFT-LCD performance and quality on the whole.
Description of drawings
Fig. 1 is the planimetric map of TFT-LCD array base palte of the present invention;
Fig. 2 be among Fig. 1 A1-A1 to sectional view;
Fig. 3 be among Fig. 1 B1-B1 to sectional view;
Fig. 4 is the planimetric map after the TFT-LCD array base palte composition technology first time of the present invention;
Fig. 5 be among Fig. 4 A2-A2 to sectional view;
Fig. 6 be among Fig. 4 B2-B2 to sectional view;
Fig. 7 is the planimetric map after the TFT-LCD array base palte composition technology second time of the present invention;
Fig. 8 be among Fig. 7 A3-A3 to sectional view;
Fig. 9 be among Fig. 7 B3-B3 to sectional view;
Figure 10 is TFT-LCD array base palte of the present invention planimetric map after the composition technology for the third time;
Figure 11 be among Figure 10 A4-A4 to sectional view;
Figure 12 be among Figure 10 B4-B4 to sectional view;
Figure 13 for deposit transparent conductive film in the 4th composition technology of TFT-LCD array base palte of the present invention and shading metallic film after A1-A1 to sectional view;
Figure 14 for deposit transparent conductive film in the 4th composition technology of TFT-LCD array base palte of the present invention and shading metallic film after B1-B1 to sectional view;
Figure 15 for exposure imaging in the 4th composition technology of TFT-LCD array base palte of the present invention after A1-A1 to sectional view;
Figure 16 for exposure imaging in the 4th composition technology of TFT-LCD array base palte of the present invention after B1-B1 to sectional view;
Figure 17 in the 4th composition technology of TFT-LCD array base palte of the present invention for the first time behind the etching technics A1-A1 to sectional view;
Figure 18 in the 4th composition technology of TFT-LCD array base palte of the present invention for the first time behind the etching technics B1-B1 to sectional view;
Figure 19 for cineration technics in the 4th composition technology of TFT-LCD array base palte of the present invention after A1-A1 to sectional view;
Figure 20 for cineration technics in the 4th composition technology of TFT-LCD array base palte of the present invention after B1-B1 to sectional view;
Figure 21 in the 4th composition technology of TFT-LCD array base palte of the present invention for the second time behind the etching technics A1-A1 to sectional view;
Figure 22 in the 4th composition technology of TFT-LCD array base palte of the present invention for the second time behind the etching technics B1-B1 to sectional view;
Figure 23 is the synoptic diagram behind the deposit transparent conductive film in another kind of the 4th the composition technology of TFT-LCD array base palte of the present invention;
Figure 24 is the synoptic diagram behind the formation pixel electrode in another kind of the 4th the composition technology of TFT-LCD array base palte of the present invention;
Figure 25 is the synoptic diagram behind the deposition shading metallic film in another kind of the 4th the composition technology of TFT-LCD array base palte of the present invention;
Figure 26 is the synoptic diagram behind the liftoff stripping technology in another kind of the 4th the composition technology of TFT-LCD array base palte of the present invention;
Figure 27 is the process flow diagram of TFT-LCD manufacturing method of array base plate of the present invention;
Figure 28 is the process flow diagram of TFT-LCD manufacturing method of array base plate first embodiment of the present invention;
Figure 29 is the process flow diagram of TFT-LCD manufacturing method of array base plate second embodiment of the present invention.
Description of reference numerals:
The 1-substrate; The 2-gate electrode; The 3-gate insulation layer;
The 4-semiconductor layer; The 5-doping semiconductor layer; 6-source electrode;
The 7-drain electrode; The 8-passivation layer; The 9-passivation layer via hole;
The 11-grid line; The 12-shield bars; The 13-data line;
The 14-pixel electrode; The 15-barrier bed; The 21-transparent conductive film;
22-shading metallic film; The 30-photoresist.
Embodiment
Below by drawings and Examples, technical scheme of the present invention is described in further detail.
Fig. 1 is the planimetric map of TFT-LCD array base palte of the present invention, Fig. 2 be among Fig. 1 A1-A1 to sectional view, Fig. 3 be among Fig. 1 B1-B1 to sectional view.As Fig. 1～shown in Figure 3, the agent structure of TFT-LCD array base palte of the present invention comprises grid line 11, data line 13, pixel electrode 14, barrier bed 15 and the thin film transistor (TFT) that is formed on the substrate 1, orthogonal grid line 11 and data line 13 have defined pixel region, thin film transistor (TFT) and pixel electrode 14 are formed in the pixel region, grid line 11 is used for providing start signal to thin film transistor (TFT), data line 13 is used for providing data-signal to pixel electrode 14, barrier bed 15 is positioned at the top of data line 13, is used to block the light leak zone.Particularly, thin film transistor (TFT) comprises gate electrode 2, gate insulation layer 3, semiconductor layer 4, doping semiconductor layer (ohmic contact layer) 5, source electrode 6, drain electrode 7 and passivation layer 8, and gate electrode 2 is formed on the substrate 1, and is connected with grid line 11; Gate insulation layer 3 is formed on gate electrode 2 and the grid line 11 and covers whole base plate 1, and active layer (semiconductor layer 4 and doping semiconductor layer 5) is formed on the gate insulation layer 3 and is positioned at the top of gate electrode 2; One end of source electrode 6 is formed on the active layer, the other end is connected with data line 13, one end of drain electrode 7 is formed on the active layer, the other end is connected with pixel electrode 14 by the passivation layer via hole of offering on the passivation layer 89, form the TFT channel region between source electrode 6 and the drain electrode 7, the doping semiconductor layer 5 of TFT channel region is etched away fully, exposes semiconductor layer 4; Passivation layer 8 is formed on data line 13, source electrode 6 and the drain electrode 7 and covers whole base plate 1, offers the passivation layer via hole 9 that drain electrode 7 is connected with pixel electrode 14 in drain electrode 7 positions.Barrier bed 15 is formed on the passivation layer 8, and is positioned at the top of data line 13, plays the interception of black matrix.
In technique scheme of the present invention, can also comprise shield bars 12 structures, according to actual needs, shield bars 12 both can be arranged on pixel electrode 14 around, also can only be arranged on the both sides of pixel electrode 14, promptly be positioned at the both sides of data line 13, be provided with layer with grid line 11.The width of barrier bed 15 can be provided with according to actual needs, among the present invention, the width of barrier bed 15 is set to more than or equal to L1, be less than or equal to L2, wherein L1 is the distance between two shield bars, 12 close data line 13 1 lateral edges, and L2 is that two shield bars 12 are away from the distance between data line 13 1 lateral edges.Like this, the edge of barrier bed 15 both sides is positioned at the occlusion area of two shield bars 12, the shield bars 12 that is barrier bed 15 and its both sides has overlapping, barrier bed 15 is formed with shield bars 12 block the barrier structure in light leak zone, not only improve shaded effect to greatest extent, and can not influence aperture opening ratio and the display brightness of TFT-LCD.
Fig. 4～Figure 26 is the synoptic diagram of TFT-LCD array base palte manufacture process of the present invention, can further specify technical scheme of the present invention, in the following description, the alleged composition technology of the present invention comprises technologies such as photoresist coating, mask, exposure, etching, and photoresist is example with the positive photoresist.
Fig. 4 is TFT-LCD array base palte of the present invention planimetric map after the composition technology for the first time, Fig. 5 be among Fig. 4 A2-A2 to sectional view, Fig. 6 be among Fig. 4 B2-B2 to sectional view.At first adopt the method for magnetron sputtering or thermal evaporation, go up deposition one deck grid metallic film at substrate 1 (as glass substrate or quartz base plate), the grid metallic film can adopt metals such as Mo, Al, also can adopt the laminated film (as the Mo/Al/Mo laminated film) that is made of the multiple layer metal film.Adopt the normal masks plate that the grid metallic film is carried out composition, on substrate 1, form the figure that comprises gate electrode 2, grid line 11 and shield bars 12, as Fig. 4～shown in Figure 6.In the practical application, also can form the shield bars of other version or shield bars is not set.The present invention for the first time also can form the public electrode line graph in the composition technology simultaneously, forms memory capacitance structure of (Cs on Common) on public electrode wire.
Fig. 7 is TFT-LCD array base palte of the present invention planimetric map after the composition technology for the second time, Fig. 8 be among Fig. 7 A3-A3 to sectional view, Fig. 9 be among Fig. 7 B3-B3 to sectional view.On the substrate of finishing the said structure figure, at first using plasma strengthens chemical vapor deposition (being called for short PECVD) method, deposit gate insulation layer 3, semiconductor layer 4 and doping semiconductor layer 5 (also claiming ohmic contact layer) successively, adopt the method for magnetron sputtering or thermal evaporation then, metallic film is leaked in deposition one deck source.Gate insulation layer 3 can adopt oxide, nitride or oxynitrides, metallic film is leaked in the source can adopt metals such as Mo, Al, or adopt the low metal of Cu constant resistance rate, also can adopt the laminated film (as the Mo/Al/Mo laminated film) that constitutes by the multiple layer metal film.Adopt half rank or gray-tone mask plate to form data line 13, source electrode 6, drain electrode 7 and TFT channel region figure, as Fig. 7～shown in Figure 9 by composition technology.The present invention's composition technology for the second time is a kind of composition technology that adopts the multistep lithographic method, with form data line in four composition technologies of prior art, the source electrode, drain electrode is identical with the process of TFT channel region figure, technological process is specially: at first leak coating one deck photoresist on the metallic film in the source, adopt half rank or gray-tone mask plate that photoresist is exposed, make photoresist form complete exposure area, unexposed area and half exposure area, wherein unexposed area is corresponding to data line, source electrode and drain electrode figure region, half exposure area is corresponding to TFT channel region figure region between source electrode and the drain electrode, and complete exposure area is corresponding to the zone beyond the above-mentioned figure.After the development treatment, the photoresist thickness of unexposed area does not change, and forms the complete reserve area of photoresist, the photoresist of complete exposure area is removed fully, form photoresist and remove the zone fully, the photoresist thickness attenuation of half exposure area forms photoresist half reserve area.Leak metallic film, doping semiconductor layer and semiconductor layer by the source that the first time, etching technics etched away complete exposure area fully, form data line 13, source electrode 6 and drain electrode 7 figures.By cineration technics, remove the photoresist of half exposure area, expose this regional source and leak metallic film.Leak metallic film and doping semiconductor layer 5 by the source that the second time, etching technics etched away half exposure area fully, and etch away the semiconductor layer 4 of segment thickness, expose semiconductor layer 4, form TFT channel region figure.Peel off remaining photoresist at last, finish TFT-LCD array base palte of the present invention composition technology for the second time.After this composition technology, grid line 11 and data line 13 define pixel region, data line 13 is between two shield bars 12, one end of source electrode 6 is positioned at gate electrode 2 tops, the other end is connected with data line 13, and an end of drain electrode 7 is positioned at gate electrode 2 tops, is oppositely arranged with source electrode 6, the doping semiconductor layer 5 of TFT channel region is etched away fully between source electrode 6 and the drain electrode 7, exposes semiconductor layer 4.In addition, the below of data line 13, source electrode 6 and drain electrode 7 remains with doping semiconductor layer 5 and semiconductor layer 4.When the source was leaked metallic film and adopted the low metal of Cu constant resistance rate, because resistivity is low, the width of data line 13 can be controlled at about 5 μ m even be littler, thereby minimizes the stray capacitance that may occur.
Figure 10 is TFT-LCD array base palte of the present invention planimetric map after the composition technology for the third time, Figure 11 be among Figure 10 A4-A4 to sectional view, Figure 12 be among Figure 10 B4-B4 to sectional view.On the substrate of finishing the said structure figure, adopt PECVD method deposition one deck passivation layer 8.Passivation layer 8 can adopt oxide, nitride or oxynitrides.Adopt the normal masks plate that passivation layer is carried out composition, form passivation layer via hole 9, passivation layer via hole 9 is positioned at the top of drain electrode 7, as Figure 10～shown in Figure 12.In this composition technology, also be formed with the grid line interface via hole in grid line interface zone (grid line PAD) and the data line interface via hole figures of data line interface zone (data line PAD) simultaneously, the technology that forms grid line interface via hole and data line interface via pattern by composition technology has been widely used in repeating no more here in the present composition technology.
At last, on the substrate of finishing the said structure figure, adopt the method for magnetron sputtering or thermal evaporation, deposit transparent conductive film and shading metallic film successively, adopt half rank or gray-tone mask plate in pixel region, to form pixel electrode 14 figures by composition technology, form barrier bed 15 figures above data line 13, pixel electrode 14 is connected with drain electrode 7 by passivation layer via hole 9, as Fig. 1～shown in Figure 3.The 4th composition technology of the present invention is a kind of composition technology that adopts the multistep lithographic method, and technological process is described as follows.
Figure 13 for deposit transparent conductive film in the 4th composition technology of TFT-LCD array base palte of the present invention and shading metallic film after A1-A1 to sectional view, Figure 14 for deposit transparent conductive film in the 4th composition technology of TFT-LCD array base palte of the present invention and shading metallic film after B1-B1 to sectional view.On the substrate of finishing the said structure figure, adopt the method for magnetron sputtering or thermal evaporation, deposit transparent conductive film 21 and shading metallic film 22 successively, transparent conductive film 21 can adopt materials such as tin indium oxide (ITO), indium zinc oxide (IZO) or aluminum zinc oxide, also can adopt other metal and metal oxide, shading metallic film 22 can adopt metals such as Mo, Cr, Al, or light-proofness resin preferably, as Figure 13 and shown in Figure 14.
Figure 15 for exposure imaging in the 4th composition technology of TFT-LCD array base palte of the present invention after A1-A1 to sectional view, Figure 16 for exposure imaging in the 4th composition technology of TFT-LCD array base palte of the present invention after B1-B1 to sectional view.On shading metallic film 22, apply one deck photoresist 30, adopt the exposure of half rank or gray-tone mask plate, make photoresist form complete exposure area A, unexposed area B and half exposure area C.Unexposed area B is corresponding to barrier bed figure region, and half exposure area C is corresponding to pixel electrode figure region, and complete exposure area A is corresponding to the zone beyond the above-mentioned figure.After the development treatment, the photoresist thickness of unexposed area B does not change, form the complete reserve area of photoresist, the photoresist of complete exposure area A is removed fully, form photoresist and remove the zone fully, the photoresist thickness attenuation of half exposure area C forms photoresist half reserve area, as Figure 15 and shown in Figure 16.
Figure 17 in the 4th composition technology of TFT-LCD array base palte of the present invention for the first time behind the etching technics A1-A1 to sectional view, Figure 18 in the 4th composition technology of TFT-LCD array base palte of the present invention for the first time behind the etching technics B1-B1 to sectional view.By the first time etching technics etch away shading metallic film 22 and the transparent conductive film 21 of complete exposure area A fully, form the barrier bed figure, as Figure 17 and shown in Figure 180.In this wet method eating away technology, can adopt first etching liquid to etch away shading metallic film 22 earlier, adopt second etching liquid to etch away transparent conductive film 21 then, first etching liquid is carved the potpourri that can adopt nitric acid, acetate, phosphoric acid, and second etching liquid can adopt the potpourri of hydrochloric acid, acetate.The barrier bed figure that etching is finished is positioned at data line 13 tops.
Figure 19 for cineration technics in the 4th composition technology of TFT-LCD array base palte of the present invention after A1-A1 to sectional view, Figure 20 for cineration technics in the 4th composition technology of TFT-LCD array base palte of the present invention after B1-B1 to sectional view.By cineration technics, remove the photoresist of half exposure area C, expose this regional shading metallic film 22, as Figure 19 and shown in Figure 20.Because the thickness of unexposed area B photoresist is greater than the thickness of half exposure area C photoresist, so behind the cineration technics, unexposed area B still is coated with certain thickness photoresist.
Figure 21 in the 4th composition technology of TFT-LCD array base palte of the present invention for the second time behind the etching technics A1-A1 to sectional view, Figure 22 in the 4th composition technology of TFT-LCD array base palte of the present invention for the second time behind the etching technics B1-B1 to sectional view.By the second time etching technics etch away the shading metallic film of half exposure area C fully, expose the transparent conductive film of its below, form pixel electrode 14 figures, pixel electrode 14 is connected with drain electrode 7 by passivation layer via hole 9, as Figure 21 and shown in Figure 22.
Peel off remaining photoresist at last, finish the 4th composition technology of TFT-LCD array base palte of the present invention, as Fig. 1～shown in Figure 3.At this moment, barrier bed 15 belows remain with transparent conductive film, and promptly barrier bed and transparent conductive film are formed on the passivation layer 8.
Four composition technologies discussed above only are a kind of implementation methods of preparation TFT-LCD array base palte of the present invention, can also be by increasing or reduce composition technology number of times, selecting different material or combinations of materials to realize the present invention in actual the use.For example, TFT-LCD array base palte of the present invention composition technology for the second time can adopt the composition technology of normal masks plate to finish by two, promptly form active layer pattern, adopt the composition technology of normal masks plate to form data line, source electrode, drain electrode and TFT channel region figure by another time by the composition technology that once adopts the normal masks plate.And for example, the 4th composition technology of TFT-LCD array base palte of the present invention can adopt the composition technology of normal masks plate to finish by two, promptly form the pixel electrode figure by the composition technology that once adopts the normal masks plate, adopt the composition technology of normal masks plate to form the barrier bed figure by another time, repeat no more here.
Figure 23～Figure 26 is the synoptic diagram of another kind of the 4th the composition technology of TFT-LCD array base palte of the present invention, adopts liftoff peeling off (lift off) technology to form pixel electrode and barrier bed figure by a composition technology.Below only with B1-B1 among Fig. 1 to another kind of the 4th the composition technological process of sectional view simple declaration TFT-LCD array base palte of the present invention.
Figure 23 is the synoptic diagram behind the deposit transparent conductive film in another kind of the 4th the composition technology of TFT-LCD array base palte of the present invention.Finishing on the substrate of composition technology for the third time, adopt the method deposit transparent conductive film 21 of magnetron sputtering or thermal evaporation, as shown in figure 23.Transparent conductive film 21 can adopt materials such as tin indium oxide (ITO), indium zinc oxide (IZO) or aluminum zinc oxide, also can adopt other metal and metal oxide.
Figure 24 is the synoptic diagram behind the formation pixel electrode in another kind of the 4th the composition technology of TFT-LCD array base palte of the present invention.On transparent conductive film, apply one deck photoresist 30, adopt the exposure of normal masks plate, make photoresist form complete exposure area A and unexposed area B, unexposed area B is corresponding to pixel electrode figure region, and complete exposure area A is corresponding to the zone beyond the pixel electrode figure.After the development treatment, the photoresist thickness of unexposed area B does not change, and forms the complete reserve area of photoresist, and the photoresist of complete exposure area A is removed fully, forms photoresist and removes the zone fully.Etch away the transparent conductive film of complete exposure area A fully by etching technics, form pixel electrode 14 figures, as shown in figure 24.This etching technics is a wet etching, and etching liquid can adopt the potpourri of hydrochloric acid, acetate, and adopts the mode at quarter, etches away the transparent conductive film of photoresist fringe region below.
Figure 25 is the synoptic diagram behind the deposition shading metallic film in another kind of the 4th the composition technology of TFT-LCD array base palte of the present invention.Keep the photoresist 30 on pixel electrode 14 figures, adopt the method for magnetron sputtering or thermal evaporation, deposition one deck shading metallic film 22.Adopted the mode at quarter of crossing in the pixel electrode graphics art owing to form, therefore shading metallic film 22 has been ruptured at the photoresist fringe region, as shown in figure 25.In the practical application, the thickness of shading metallic film is
In order to avoid blocked up shading metallic film is unfavorable for the stripping technology of back.
Figure 26 is the synoptic diagram behind the liftoff stripping technology in another kind of the 4th the composition technology of TFT-LCD array base palte of the present invention.Adopt liftoff stripping technology stripping photoresist, the shading metallic film on the stripping photoresist forms barrier bed 15 figures that are positioned at data line 13 tops, as shown in figure 26 simultaneously.In this technology, can heat or laser radiation, photoresist produce to be expanded or shrink, thereby the shading metallic film on it is ruptured photoresist, stripper contact lithograph glue easily like this, effect is peeled off in raising.At this moment, barrier bed 15 is formed directly on the passivation layer 8.
The invention provides a kind of TFT-LCD array base palte,, under the prerequisite that guarantees aperture opening ratio and display brightness, effectively solve the light leak defective by above data line, forming barrier bed.Because barrier bed of the present invention is arranged on the array base palte, therefore no matter be color membrane substrates and accurately contraposition of array base palte, still color membrane substrates or array base palte are subjected to external impacts, though the black matrix on the color membrane substrates lost efficacy at this moment, but barrier bed of the present invention can play the interception of black matrix, be not subjected to contraposition and shock effect, can stop the front light leak fully, effectively stop the side light leak.Further, adopt the solution that strengthens black matrix width to compare with prior art, because barrier bed of the present invention can effectively be eliminated the light leak that bit errors causes, therefore the present invention can reduce the width of black matrix on the color membrane substrates to greatest extent, even can replace black matrix on the color membrane substrates, improve aperture opening ratio and the display brightness of TFT-LCD effectively.In addition, the TFT-LCD array base palte that the present invention is formed with barrier bed still adopts existing process equipment and condition preparation, under the prerequisite that does not increase composition technology, has improved TFT-LCD performance and quality on the whole.
Though it is that example has illustrated technical solution of the present invention that foregoing is formed on the data line with barrier bed, in the practical application, barrier bed also can be formed on the grid line top, can be implemented in equally under the prerequisite that guarantees aperture opening ratio and display brightness, effectively solves the light leak defective.
Figure 27 is the process flow diagram of TFT-LCD manufacturing method of array base plate of the present invention, comprising:
The invention provides a kind of TFT-LCD manufacturing method of array base plate,, under the prerequisite that guarantees aperture opening ratio and display brightness, effectively solve the light leak defective by above data line, forming barrier bed.Because barrier bed of the present invention is arranged on the array base palte, therefore no matter be color membrane substrates and accurately contraposition of array base palte, still color membrane substrates or array base palte are subjected to external impacts, barrier bed all can play the interception of black matrix, be not subjected to contraposition and shock effect, stop the front light leak fully, effectively stop the side light leak.The TFT-LCD array base palte that the present invention is formed with barrier bed still adopts existing process equipment and condition preparation, under the prerequisite that does not increase composition technology, has improved TFT-LCD performance and quality on the whole.
Further specify the technical scheme of TFT-LCD manufacturing method of array base plate of the present invention below by specific embodiment.
Figure 28 is the process flow diagram of TFT-LCD manufacturing method of array base plate first embodiment of the present invention, and in technical scheme shown in Figure 27, described step 4 comprises:
Step 411, on the substrate of completing steps 3, adopt the method for magnetron sputtering or thermal evaporation, successively deposit transparent conductive film and shading metallic film;
Step 412, on described shading metallic film, apply one deck photoresist;
Step 413, employing half rank or the exposure of gray-tone mask plate, make the complete reserve area of photoresist formation photoresist, photoresist remove zone and photoresist half reserve area fully, the complete reserve area of photoresist is corresponding to barrier bed figure region, photoresist half reserve area is corresponding to pixel electrode figure region, and photoresist is removed the zone fully corresponding to the zone beyond the above-mentioned figure; After the development treatment, the photoresist thickness of the complete reserve area of photoresist does not change, and photoresist is removed the photoresist in zone fully and removed the photoresist thickness attenuation of photoresist half reserve area fully;
Step 414, by the first time etching technics etch away shading metallic film and the transparent conductive film that photoresist is removed the zone fully fully, form the barrier bed figure, described barrier bed is positioned at the top of data line;
Step 415, by cineration technics, remove the photoresist of photoresist half reserve area, expose this regional shading metallic film;
Step 416, by the second time etching technics etch away the shading metallic film of photoresist half reserve area fully, expose the transparent conductive film of its below, form the pixel electrode figure, pixel electrode is connected with drain electrode by passivation layer via hole;
Step 417, peel off remaining photoresist.
Present embodiment is that a kind of multistep lithographic method that adopts forms the technical scheme of pixel electrode and barrier bed figure simultaneously by composition technology, and its preparation process is introduced in aforementioned Figure 13～technical scheme shown in Figure 22 in detail, repeats no more here.
Figure 29 is the process flow diagram of TFT-LCD manufacturing method of array base plate second embodiment of the present invention, and in technical scheme shown in Figure 27, described step 4 comprises:
Present embodiment is a kind ofly to adopt liftoff stripping technology to form the technical scheme of pixel electrode and barrier bed figure simultaneously by composition technology, and its preparation process is introduced in aforementioned Figure 23～technical scheme shown in Figure 26 in detail, repeats no more here.In the present embodiment, etching technics is a wet etching, and etching liquid can adopt the potpourri of hydrochloric acid, acetate, and adopts the mode at quarter, etches away the transparent conductive film of photoresist fringe region below.In addition, the thickness of shading metallic film is
In order to avoid blocked up shading metallic film is unfavorable for the stripping technology of back.
In the step 1 of the present invention, adopt the method for magnetron sputtering or thermal evaporation, go up deposition one deck grid metallic film at substrate (as glass substrate or quartz base plate), the grid metallic film can adopt metals such as Mo, Al, also can adopt the laminated film (as the Mo/Al/Mo laminated film) that is made of the multiple layer metal film.Adopt the normal masks plate that the grid metallic film is carried out composition, formation comprises gate electrode and grid line figure on substrate.Also can form the figure of shield bars in this composition technology simultaneously, and the edge of barrier bed both sides is positioned at the zone that shield bars blocks.In the practical application, also can form the public electrode line graph simultaneously in this composition technology, form memory capacitance structure of (Cs on Common) on public electrode wire.
In the step 2 of the present invention, on the substrate of finishing the said structure figure, at first adopt the PECVD method, deposit gate insulation layer, semiconductor layer and doping semiconductor layer successively, adopt the method for magnetron sputtering or thermal evaporation then, metallic film is leaked in deposition one deck source.Gate insulation layer can adopt oxide, nitride or oxynitrides, metallic film is leaked in the source can adopt metals such as Mo, Al, or adopt the low metal of Cu constant resistance rate, also can adopt the laminated film (as the Mo/Al/Mo laminated film) that constitutes by the multiple layer metal film.Adopt half rank or gray-tone mask plate to form data line, source electrode, drain electrode and TFT channel region figure by composition technology.This composition technology is a kind of composition technology that adopts the multistep lithographic method, and is identical with the process that forms data line, source electrode, drain electrode and TFT channel region figure in existing four composition technologies.
In the step 3 of the present invention, on the substrate of finishing the said structure figure, adopt PECVD method deposit thickness one deck passivation layer, passivation layer can adopt oxide, nitride or oxynitrides.Adopt the normal masks plate that passivation layer is carried out composition, form passivation layer via hole, passivation layer via hole is positioned at the top of drain electrode.In this composition technology, also be formed with grid line interface via hole and data line interface via hole figures simultaneously.
It should be noted that at last: above embodiment is only unrestricted in order to technical scheme of the present invention to be described, although the present invention is had been described in detail with reference to preferred embodiment, those of ordinary skill in the art is to be understood that, can make amendment or be equal to replacement technical scheme of the present invention, and not break away from the spirit and scope of technical solution of the present invention.
Claims (5)
1. a TFT-LCD manufacturing method of array base plate is characterized in that, comprising:
Step 1, on substrate deposition grid metallic film, form the figure that comprises grid line and gate electrode by composition technology;
Step 2, on the substrate of completing steps 1, deposit gate insulation layer, semiconductor layer, doping semiconductor layer and metallic film is leaked in the source, form the figure that comprises data line, drain electrode, source electrode and TFT raceway groove by composition technology;
Step 3, on the substrate of completing steps 2 deposit passivation layer, form the figure comprise passivation layer via hole by composition technology, described passivation layer via hole is positioned at the top of drain electrode;
Step 4, on the substrate of completing steps 3 deposit transparent conductive film and shading metallic film, form the figure that comprises pixel electrode and barrier bed by composition technology, described pixel electrode is connected with drain electrode by passivation layer via hole, and described barrier bed is positioned at the top of data line;
Wherein, described step 4 comprises:
On the substrate of completing steps 3, adopt the method for magnetron sputtering or thermal evaporation, successively deposit transparent conductive film and shading metallic film;
On described shading metallic film, apply one deck photoresist;
Adopt the exposure of half rank or gray-tone mask plate, make the complete reserve area of photoresist formation photoresist, photoresist remove zone and photoresist half reserve area fully, the complete reserve area of photoresist is corresponding to barrier bed figure region, photoresist half reserve area is corresponding to pixel electrode figure region, and photoresist is removed the zone fully corresponding to the zone beyond the above-mentioned figure; After the development treatment, the photoresist thickness of the complete reserve area of photoresist does not change, and photoresist is removed the photoresist in zone fully and removed the photoresist thickness attenuation of photoresist half reserve area fully;
By the first time etching technics etch away shading metallic film and the transparent conductive film that photoresist is removed the zone fully fully, form the barrier bed figure, described barrier bed is positioned at the top of data line;
By cineration technics, remove the photoresist of photoresist half reserve area, expose this regional shading metallic film;
By the second time etching technics etch away the shading metallic film of photoresist half reserve area fully, expose the transparent conductive film of its below, form the pixel electrode figure, pixel electrode is connected with drain electrode by passivation layer via hole;
Peel off remaining photoresist;
Or described step 4 comprises:
On the substrate of completing steps 3, adopt the method for magnetron sputtering or thermal evaporation, the deposit transparent conductive film;
On described transparent conductive film, apply one deck photoresist;
Adopt the exposure of normal masks plate, make photoresist formation complete reserve area of photoresist and photoresist remove the zone fully, the complete reserve area of photoresist is corresponding to the pixel electrode region, and photoresist is removed the zone fully corresponding to the zone beyond the pixel electrode figure; After the development treatment, the photoresist thickness of the complete reserve area of photoresist does not change, and photoresist is removed the photoresist in zone fully and removed fully;
Etch away the transparent conductive film that photoresist is removed the zone fully fully by etching technics, form the pixel electrode figure, pixel electrode is connected with drain electrode by passivation layer via hole;
On formation pixel electrode and pixel electrode, remain with on the substrate of photoresist, adopt the method for magnetron sputtering or thermal evaporation, deposition shading metallic film, described shading metallic film ruptures at the photoresist fringe region;
Adopt liftoff stripping technology stripping photoresist, the shading metallic film on the stripping photoresist forms the barrier bed figure simultaneously, and described barrier bed figure is positioned at the top of data line.
2. TFT-LCD manufacturing method of array base plate according to claim 1 is characterized in that, also is formed with shield bars in the described step 1 simultaneously.
3. TFT-LCD manufacturing method of array base plate according to claim 2 is characterized in that, the edge of described barrier bed both sides is positioned at the zone that described shield bars blocks.
4. TFT-LCD manufacturing method of array base plate according to claim 1 is characterized in that, described etching technics is wet etching and adopted the mode at quarter, etches away the transparent conductive film of photoresist fringe region below.
5. TFT-LCD manufacturing method of array base plate according to claim 1 is characterized in that the thickness of described shading metallic film is
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| CN102468243B (en) * | 2010-11-11 | 2014-06-11 | 北京京东方光电科技有限公司 | TFT (Thin Film Transistor) array substrate, manufacturing method and liquid crystal display device |
| CN103226272B (en) * | 2013-04-16 | 2015-07-22 | 合肥京东方光电科技有限公司 | Array substrate and preparation method thereof, and display device |
| CN103346159B (en) * | 2013-06-28 | 2016-08-31 | 北京京东方光电科技有限公司 | A kind of array base palte and manufacture method, display device |
| CN104157609B (en) * | 2014-08-20 | 2017-11-10 | 深圳市华星光电技术有限公司 | The preparation method and its structure of TFT substrate |
| CN104808381A (en) * | 2015-04-28 | 2015-07-29 | 厦门天马微电子有限公司 | Display panel and display device |
| KR20170115133A (en) * | 2016-04-04 | 2017-10-17 | 삼성디스플레이 주식회사 | Liquid crystal display device |
| CN108780254A (en) * | 2016-11-04 | 2018-11-09 | 京东方科技集团股份有限公司 | Display base plate, liquid crystal display panel and its manufacturing method, liquid crystal display |
| CN106646975A (en) * | 2017-01-03 | 2017-05-10 | 京东方科技集团股份有限公司 | Display panel, display device and production method of display panel |
| JP6969755B2 (en) * | 2017-09-04 | 2021-11-24 | 京東方科技集團股▲ふん▼有限公司Boe Technology Group Co., Ltd. | Display board and display device |
| CN108803168B (en) * | 2018-06-05 | 2020-03-31 | 深圳市华星光电半导体显示技术有限公司 | Array substrate, manufacturing method thereof and liquid crystal display device |
| US10720454B2 (en) | 2018-06-05 | 2020-07-21 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Manufacturing method for array substrate and liquid crystal display device |
| CN110806653A (en) * | 2019-10-29 | 2020-02-18 | 深圳市华星光电半导体显示技术有限公司 | Liquid crystal display panel and liquid crystal display device |
| CN111061105A (en) * | 2019-12-31 | 2020-04-24 | 深圳市华星光电半导体显示技术有限公司 | Display panel and display device thereof |
| CN112130416B (en) * | 2020-10-19 | 2024-02-13 | 北京京东方技术开发有限公司 | Photoetching material, display substrate, manufacturing method of display substrate and display panel |
| CN114908317A (en) * | 2022-06-29 | 2022-08-16 | 芜湖长信科技股份有限公司 | TFT-LCD metal frame processing technology |
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