CN101814688A - Intracavity frequency doubling microchip laser with high polarization ratio output - Google Patents
Intracavity frequency doubling microchip laser with high polarization ratio output Download PDFInfo
- Publication number
- CN101814688A CN101814688A CN200910113045A CN200910113045A CN101814688A CN 101814688 A CN101814688 A CN 101814688A CN 200910113045 A CN200910113045 A CN 200910113045A CN 200910113045 A CN200910113045 A CN 200910113045A CN 101814688 A CN101814688 A CN 101814688A
- Authority
- CN
- China
- Prior art keywords
- frequency doubling
- gain medium
- laser
- intracavity frequency
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The invention relates to the design and the manufacture of an intracavity frequency doubling microchip laser with high polarization ratio output. The initial polarization of frequency doubled laser in the conventional microchip laser structure is good, but because the frequency doubled laser is depolarized by the birefringence effect after being partially reflected into a laser gain medium (4), the polarization of the output laser is reduced. With the structure, because a medium film (7) blocks the frequency doubled laser from entering the laser gain medium (4), the depolarization influence of the laser gain medium (4) on the frequency doubled laser is eliminated so as to obtain polarized laser output with higher extinction ratio. Compared with the common design which utilizes a mode of inserting wave plates into a cavity to increase polarization output, the structure has better temperature adaptability and smaller overall heat productivity, has compact structure and low cost, and is more conducive to mass production.
Description
Technical field
The present invention relates to a kind of micro-slice laser of High Extinction Ratio polarization output frequency doubled light, belong to a kind of affiliated technical field of micro-slice laser of intracavity frequency doubling.
Technical background
Laser diode-pumped intracavity frequency doubling micro-chip laser device conversion efficiency height, compact conformation, life-span are long, have a wide range of applications in various fields such as laser indication, laser display, laser printing, laser medicine, subsurface communication, optical disc, airport navigation; The laser of high polarizability is even more important to specific areas such as laser display, subsurface communication, optical discs.
A kind of typical micro-slice laser is as shown in Figure 1: the ellipse-shaped light that laser pumping source among the figure (1) sends is compressed shaping by collimation focus lens group (2 and 3) to light and is reentered and be mapped in the microplate module, the microplate module is fixed together by modes such as gummed, optical cement or in-depth optical cements by birefringence gain medium (4) and intracavity frequency doubling crystal (5), and gain medium (4) can be laser crystals such as Nd:YVO4, Nd:YAG, Nd:GdVO4; Intracavity frequency doubling crystal (5) can have the nonlinear crystalline material of frequency multiplication characteristic for KTP, LBO, BBO or other; The incident end face of gain medium (4) be coated with to pump light anti-reflection simultaneously to the chamber in fundamental frequency light and the high anti-deielectric-coating (8) of frequency doubled light, then be coated with fundamental frequency light highly anti-simultaneously to the anti-reflection deielectric-coating of frequency doubled light (9) on intracavity frequency doubling crystal (5) outgoing end face, two plated film end faces have been formed and have been put down laserresonator.
The characteristics of above-mentioned micro-slice laser are that compact conformation is simple, volume is little and cost of manufacture is low.But gain medium (4) is subjected to thermogenetic thermally induced birefringence during owing to laser works, the initial polarizability of frequency doubled light is good, but because it is caused depolarization because of partial reflection enters gain medium (4) back by its birefringence effect, thereby reduced the output polarisation of light.And because gain medium (4) absorbs big many of relative near infrared light wave band to visible frequency doubled light wave band, crystal continues a large amount of frequency doubled lights that absorb, and causes the decline of laser output power, the further heating of crystal and more serious depolarization phenomenon.
Summary of the invention
The object of the present invention is to provide a kind of intracavity frequency doubling micro-chip laser device of high polarization specific output.For achieving the above object, the present invention adopts following structure: a kind of intracavity frequency doubling micro-chip laser device of high polarization specific output, comprise laser pumping source, collimation focus lens group, gain medium and intracavity frequency doubling crystal, wherein, between described gain medium and the intracavity frequency doubling crystal optical element is arranged, described optical element is coated with a deielectric-coating near on the logical light face of intracavity frequency doubling crystal, and described deielectric-coating is anti-reflection to fundamental frequency light, and frequency doubled light is all-trans.
Described gain medium is a birefringence mode gain medium crystal.
The incident end face of described gain medium be coated with to pump light anti-reflection simultaneously to the chamber in fundamental frequency light and the high anti-media coating of frequency doubled light, then be coated with fundamental frequency light highly anti-simultaneously to the anti-reflection media coating of frequency doubled light on intracavity frequency doubling crystal outgoing end face, two plated film end faces have been formed average laserresonator.
The present invention also can place plano-concave shape output coupling mirror and plate corresponding membrane system after place plano-concave shape input coupling mirror before the incident end of optical resonator and plating corresponding membrane system or the exit end at optical resonator, forms the plano-concave laserresonator with crystal.
Between described gain medium, optical element, intracavity frequency doubling crystal or plano-concave shape optical mirror slip can be fixing respectively, also can lead to methods such as optical contant, optical cement or in-depth optical cement overall fixed together.
Adopt said structure, enter gain medium, eliminated the depolarization influence of gain medium, thereby obtain polarised light output than High Extinction Ratio to frequency doubled light because the deielectric-coating between gain medium and intracavity frequency doubling crystal has been blocked frequency doubled light.Relatively generally use chamber interpolation incoming wave sheet mode to improve the design of polarization output, this structure has better thermal adaptability and littler whole caloric value, and compact conformation, and cost is low, is more conducive to realize producing in enormous quantities.
Description of drawings
Below in conjunction with accompanying drawing patent of the present invention is described further
Fig. 1 is a kind of typical micro-slice laser structural representation;
Fig. 2 is a laser structure schematic diagram of the present invention;
The structural representation of Fig. 3 embodiments of the invention 1;
The structural representation of Fig. 4 embodiments of the invention 2.
Embodiment
Among Fig. 2, the ellipse-shaped light that laser pumping source (1) sends is compressed shaping by collimation focus lens group (2 and 3) to light and is reentered and be mapped in the microplate module, the microplate module is fixed together by modes such as gummed, optical cement or in-depth optical cements by birefringence gain medium (4), optical element (6) and intracavity frequency doubling crystal (5), and gain medium (4) can be laser crystals such as Nd:YVO4, Nd:YAG, Nd:GdVO4; Optical element (6) can be for non-impurity-doped ion radical material identical or thermal coefficient of expansion with used gain medium (4) optical crystal or the glass material between used gain medium (4) and intracavity frequency doubling crystal (5); Intracavity frequency doubling crystal (5) can have the nonlinear crystalline material of frequency multiplication characteristic for KTP, LBO, BBO or other; The incident end face of gain medium (4) be coated with to pump light anti-reflection simultaneously to the chamber in fundamental frequency light and the high anti-deielectric-coating (8) of frequency doubled light, then be coated with fundamental frequency light highly anti-simultaneously to the anti-reflection deielectric-coating of frequency doubled light (9) on intracavity frequency doubling crystal (5) outgoing end face, two plated film end faces have been formed average laserresonator; On the one side of optical element (6), be coated with anti-reflectionly,, stop frequency doubled light to enter gain medium (4) and cause it to be absorbed and depolarization, thereby obtain the more double-frequency laser output of high power and Geng Gao polarization ratio frequency doubled light all-dielectric film (7) to fundamental frequency light.In addition, the optical element of introducing (6) also can help gain medium (4) heat radiation and reduce heat to be delivered to the influence that intracavity frequency doubling crystal (5) is gone up generation.
Among Fig. 3, the ellipse-shaped light that laser pumping source (1) sends is compressed shaping by collimation focus lens group (2 and 3) to light and is reentered and be mapped in the microplate module, the microplate module is fixed together by modes such as gummed, optical cement or in-depth optical cements by birefringence gain medium (4) and intracavity frequency doubling crystal (5), and gain medium (4) can be laser crystals such as Nd:YVO4, Nd:YAG, Nd:GdVO4; Intracavity frequency doubling crystal (5) can have the nonlinear crystalline material of frequency multiplication characteristic for KTP, LBO, BBO or other; The incident end face of gain medium (4) be coated with to pump light anti-reflection simultaneously to the chamber in fundamental frequency light and the high anti-deielectric-coating (8) of frequency doubled light, then be coated with fundamental frequency light highly anti-simultaneously to the anti-reflection deielectric-coating of frequency doubled light (9) on intracavity frequency doubling crystal (5) outgoing end face, two plated film end faces have been formed average laserresonator; On the relative any one side of gain medium (4) or intracavity frequency doubling crystal (5), be coated with anti-reflection to fundamental frequency light, to frequency doubled light all-dielectric film (7), stop frequency doubled light to enter gain medium (4) and cause it to be absorbed and depolarization, thereby obtain the more double-frequency laser output of high power and Geng Gao polarization ratio.
Among Fig. 4, the ellipse-shaped light that laser pumping source (1) sends is compressed shaping by collimation focus lens group (2 and 3) to light and is reentered and be mapped in the microplate module, the microplate module is separated respectively to place by birefringence gain medium (4), intracavity frequency doubling crystal (5) and plano-concave optics outgoing mirror (10) to be fixed, and gain medium (4) can be laser crystals such as Nd:YVO4, Nd:YAG, Nd:GdVO4; Intracavity frequency doubling crystal (5) can have the nonlinear crystalline material of frequency multiplication characteristic for KTP, LBO, BBO or other; The incident end face of gain medium (4) be coated with to pump light anti-reflection simultaneously to the chamber in fundamental frequency light and the high anti-deielectric-coating (8) of frequency doubled light, then be coated with fundamental frequency light highly anti-simultaneously to the anti-reflection deielectric-coating of frequency doubled light (9) on the concave surface of plano-concave optics outgoing mirror (10), two plated film end faces have been formed the plano-concave laserresonator; On the relative any one side of gain medium (4) or intracavity frequency doubling crystal (5), be coated with anti-reflection to fundamental frequency light, to frequency doubled light all-dielectric film (7), stop frequency doubled light to enter gain medium (4) and cause it to be absorbed and depolarization, thereby obtain the more double-frequency laser output of high power and Geng Gao polarization ratio.
Claims (8)
1. the intracavity frequency doubling micro-chip laser device of a high polarization specific output, comprise laser pumping source (1), collimation focus lens group (2 and 3), gain medium (4) and intracavity frequency doubling crystal (5), it is characterized in that: between described gain medium (4) and the intracavity frequency doubling crystal (5) optical element (6) is arranged; Described optical element (6) is coated with a deielectric-coating (7) near on the logical light face of intracavity frequency doubling crystal (5); Described deielectric-coating (7) is anti-reflection to fundamental frequency light, and frequency doubled light is all-trans.
2. the intracavity frequency doubling micro-chip laser device of a kind of high polarization specific output according to claim 1, it is characterized in that: described gain medium (4) is a birefringence mode gain medium crystal, can be crystal such as Nd:YVO4, Nd:YLF, Nd:GdVO4, Nd:YAG, Nd:KGW.
3. the intracavity frequency doubling micro-chip laser device of a kind of high polarization specific output according to claim 1 is characterized in that: described intracavity frequency doubling crystal (5) can be non-linear frequency-doubling crystals such as KTP, BBO, LBO, LiNbO3, BIBO.
4. the intracavity frequency doubling micro-chip laser device of a kind of high polarization specific output according to claim 1 is characterized in that: described optical element (6) can be non-impurity-doped ion radical material or thermal coefficient of expansion optical crystal or the glass material between used gain medium (4) and intracavity frequency doubling crystal (5) between identical with used gain medium (4).
5. the intracavity frequency doubling micro-chip laser device of a kind of high polarization specific output according to claim 1, it is characterized in that: between described gain medium (4) and intracavity frequency doubling crystal (5) optical element (6) can be arranged, also can save optical element (6), anti-reflection to fundamental frequency light, the deielectric-coating (7) that frequency doubled light is all-trans directly is plated on gain medium (4) or the intracavity frequency doubling crystal (5).
6. the intracavity frequency doubling micro-chip laser device of a kind of high polarization specific output according to claim 1, it is characterized in that: the incident end face of described gain medium (4) is coated with pump light anti-reflection simultaneously to the high anti-deielectric-coating (8) of fundamental frequency light and frequency doubled light in the chamber, be coated with fundamental frequency light highly anti-simultaneously to the anti-reflection deielectric-coating of frequency doubled light (9) on intracavity frequency doubling crystal (5) outgoing end face, two plated film end faces have been formed average laserresonator.
7. the intracavity frequency doubling micro-chip laser device of a kind of high polarization specific output according to claim 6, it is characterized in that: place plano-concave shape input coupling mirror before the incident end of described optical resonator and plate deielectric-coating (8) or the exit end of optical resonator after, place plano-concave shape output coupling mirror and plate deielectric-coating (9), with crystal composition plano-concave laserresonator.
8. the intracavity frequency doubling micro-chip laser device of a kind of high polarization specific output according to claim 1, it is characterized in that: can be to separate to place to fix between described gain medium (4), intracavity frequency doubling crystal (5) and the optical element (6), also can be cascaded them fixing with the mode of gummed, optical cement or in-depth optical cement.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200910113045A CN101814688A (en) | 2009-12-24 | 2009-12-24 | Intracavity frequency doubling microchip laser with high polarization ratio output |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200910113045A CN101814688A (en) | 2009-12-24 | 2009-12-24 | Intracavity frequency doubling microchip laser with high polarization ratio output |
Publications (1)
Publication Number | Publication Date |
---|---|
CN101814688A true CN101814688A (en) | 2010-08-25 |
Family
ID=42621843
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200910113045A Pending CN101814688A (en) | 2009-12-24 | 2009-12-24 | Intracavity frequency doubling microchip laser with high polarization ratio output |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN101814688A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102468604A (en) * | 2010-11-03 | 2012-05-23 | 北京中视中科光电技术有限公司 | Surface mount device (SMD) type solid laser, and adjusting device, and manufacturing method for SMD type solid laser |
CN103311787A (en) * | 2013-05-31 | 2013-09-18 | 福建华科光电有限公司 | Intracavity frequency doubling microchip laser and preparation method thereof |
-
2009
- 2009-12-24 CN CN200910113045A patent/CN101814688A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102468604A (en) * | 2010-11-03 | 2012-05-23 | 北京中视中科光电技术有限公司 | Surface mount device (SMD) type solid laser, and adjusting device, and manufacturing method for SMD type solid laser |
CN103311787A (en) * | 2013-05-31 | 2013-09-18 | 福建华科光电有限公司 | Intracavity frequency doubling microchip laser and preparation method thereof |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101950918B (en) | Self-frequency doubling green light solid-state laser suitable for laser display | |
JP2007036195A (en) | Laser apparatus using nonlinear optical crystal or solid slab laser rod of multiplex optical path | |
WO2011074215A1 (en) | Wavelength-converting laser source, optical element, and image-displaying device | |
CN103887698A (en) | Efficient singular-pump-source and two-end-symmetric type pump laser | |
CN103996968A (en) | Self Raman yellow light laser of composite cavity structure | |
CN103199429A (en) | All-solid-state short wave ultraviolet laser source | |
CN102074889B (en) | Single frequency visible laser | |
CN101005189A (en) | Micro sheet structure blue light laser | |
CN102484349B (en) | The method of nonlinear crystal encapsulation and the application in diode pumped solid state thereof | |
CN101814688A (en) | Intracavity frequency doubling microchip laser with high polarization ratio output | |
CN201781186U (en) | Solid laser capable of outputting laser with high polarization ratio | |
CN112615238A (en) | Large-energy high-efficiency all-solid-state green laser | |
CN100438232C (en) | Quasi-continuous high power red, green double-wavelength laser with LD side pumping | |
CN101304150A (en) | Structure of micro-slice type electro-optical Q-switching laser | |
CN101304152A (en) | Coupled resonator self-Raman multiple frequency complete solid yellow light laser | |
CN103545700A (en) | Integrated single-platform miniature laser | |
CN203722049U (en) | High power thin type laser module packaging structure and high-power laser packaging | |
CN101752773B (en) | Laser head | |
CN201044328Y (en) | Low-noise full-solid blue ray laser resonant cavity | |
US7630415B2 (en) | Micro crystal fiber lasers and method of making frequency-doubling crystal fibers | |
CN201234057Y (en) | Self-Raman multiple frequency complete solid yellow light laser | |
CN116191192A (en) | Laser with switchable Q-switching mode | |
CN103972786A (en) | Amplifier structure and laser device | |
CN114498257A (en) | Four-stroke batten laser amplification system | |
CN102237630A (en) | Laser resonant cavity, solid laser and manufacturing method of laser resonant cavity |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
WD01 | Invention patent application deemed withdrawn after publication |
Open date: 20100825 |