CN101814545B - HPT结构的InAs/GaSb超晶格红外光电探测器 - Google Patents
HPT结构的InAs/GaSb超晶格红外光电探测器 Download PDFInfo
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- CN101814545B CN101814545B CN2010101230214A CN201010123021A CN101814545B CN 101814545 B CN101814545 B CN 101814545B CN 2010101230214 A CN2010101230214 A CN 2010101230214A CN 201010123021 A CN201010123021 A CN 201010123021A CN 101814545 B CN101814545 B CN 101814545B
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CN2010101230214A CN101814545B (zh) | 2010-03-11 | 2010-03-11 | HPT结构的InAs/GaSb超晶格红外光电探测器 |
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CN101814545A CN101814545A (zh) | 2010-08-25 |
CN101814545B true CN101814545B (zh) | 2012-01-04 |
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Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
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IL220675B (en) * | 2012-06-28 | 2019-10-31 | Elta Systems Ltd | phototransistor |
EP2802018A3 (en) | 2013-05-07 | 2015-04-29 | L-3 Communications Cincinnati Electronics Corporation | Diode barrier infrared detector devices and superlattice barrier structures |
CN103247675B (zh) * | 2013-05-23 | 2016-07-13 | 哈尔滨工业大学 | 具备光电转换和放大功能的异质结三极管 |
US9196769B2 (en) | 2013-06-25 | 2015-11-24 | L-3 Communications Cincinnati Electronics Corporation | Superlattice structures and infrared detector devices incorporating the same |
CN111900217B (zh) * | 2020-07-23 | 2022-03-11 | 中国电子科技集团公司第十一研究所 | 一种中/长波红外双波段超晶格红外探测器及其制备方法 |
Citations (3)
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US4517047A (en) * | 1981-01-23 | 1985-05-14 | The United States Of America As Represented By The Secretary Of The Army | MBE growth technique for matching superlattices grown on GaAs substrates |
CN2348378Y (zh) * | 1998-03-31 | 1999-11-10 | 中国科学院长春物理研究所 | 红外探测器 |
CN101562210A (zh) * | 2008-04-16 | 2009-10-21 | 中国科学院半导体研究所 | GaAs基InAs/GaSb超晶格红外光电探测器及其制作方法 |
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US6320212B1 (en) * | 1999-09-02 | 2001-11-20 | Hrl Laboratories, Llc. | Superlattice fabrication for InAs/GaSb/AISb semiconductor structures |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US4517047A (en) * | 1981-01-23 | 1985-05-14 | The United States Of America As Represented By The Secretary Of The Army | MBE growth technique for matching superlattices grown on GaAs substrates |
CN2348378Y (zh) * | 1998-03-31 | 1999-11-10 | 中国科学院长春物理研究所 | 红外探测器 |
CN101562210A (zh) * | 2008-04-16 | 2009-10-21 | 中国科学院半导体研究所 | GaAs基InAs/GaSb超晶格红外光电探测器及其制作方法 |
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Inventor after: Zhang Yu Inventor after: Niu Zhichuan Inventor after: Wang Guowei Inventor after: Xu Yingqiang Inventor after: Tang Bao Inventor after: Ren Zhengwei Inventor after: Chen Lianghui Inventor before: Zhang Yu Inventor before: Wang Guowei Inventor before: Tang Bao Inventor before: Ren Zhengwei Inventor before: Xu Yingqiang Inventor before: Niu Zhichuan Inventor before: Chen Lianghui |
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