CN101807501B - Method for producing film type FED (Field Emission Display) bottom substrate - Google Patents
Method for producing film type FED (Field Emission Display) bottom substrate Download PDFInfo
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Abstract
The invention relates to a method for producing a film type FED (Field Emission Display) bottom substrate, comprising the following steps of: (1) providing a transparent glass substrate, depositing low-resistance material on the whole substrate, and then forming a lower layer structure of a first strip-shaped electrode layer by utilizing a wet etching method; (2) selecting an inorganic material printing molding or organic material lithography molding method to form a first grid-shaped insulating layer, and forming a second inverted-trapezoidal, strip-shaped insulating layer by adopting the same technology; and (3) depositing a second electrode layer on the whole substrate by adopting a sputtering or vacuum evaporation method and separating lines of the second electrode layer by utilizing the height difference of the second insulating layer, shading the second electrode layer by utilizing a mask, and depositing a layer of low-work-function material to be as the emission material of FED (Field Emission Display), wherein the low-work-function material is the upper part structure of the first electrode layer. The invention has the advantages of effectively preventing the occurrence of cathode-grid short circuit and open circuit and improving the emission property of the product.
Description
Technical field
The invention belongs to field-emitter display (Field Emission Display is called for short FED) technical field, particularly a kind of manufacture method of film type FED (Field Emission Display) bottom substrate.
Background technology
Field emission display device (FED) is as novel display device and Display Technique; Be that principle of luminosity and is thought most possible a kind of flat panel display of competing with plasma (PDP) and liquid crystal display device (LCD) near a kind of flat-panel display device of cathode ray tube (CRT) in the flat-panel display device.But owing to still have more technical barrier not capture as yet at present; Infrabasal plate complex manufacturing technology particularly; The occurrence frequency of the moon, gate short, breaking phenomena is higher; Yield is lower, electronics emission is inhomogeneous cause effects limit such as the brightness disproportionation imaging effect is relatively poor its in real-life application.
Summary of the invention
The manufacture method that the purpose of this invention is to provide a kind of film type FED (Field Emission Display) bottom substrate.
To achieve these goals, the present invention adopts following technical scheme: a kind of manufacture method of film type FED (Field Emission Display) bottom substrate may further comprise the steps:
1) understructure of preparation first electrode: a transparent glass substrate is provided; Whole plate deposition low electrical resistant material on glass substrate utilizes wet method of carving to form the understructure of first electrode of strip then earlier;
2) preparation first insulating barrier and second insulating barrier: adopt the method for inorganic material printing moulding to form latticed first insulating barrier, technological process is printing, exposure, development, sintering; Adopt the method for inorganic material printing moulding to form down trapezoidal strip second insulating barrier, technological process is printing, exposure, development, sintering;
3) superstructure of preparation the second electrode lay and first electrode layer: adopt the whole plate deposition of the method the second electrode lay of sputter or vacuum evaporation, utilize between the height official post the second electrode lay lines of second insulating barrier separately; Then utilize the mask plate shielding the second electrode lay, deposition one deck low work function material is as the emissive material of FED, and this layer low work function material promptly is the superstructure of first electrode layer.
Said low electrical resistant material is a kind of among Cr, Al, Mo/Al, Mo/Al/Mo, Ag, Cu, ITO, the IZO.
Said low work function material is a kind of among Al, Li/Al, LiF, Mg/Ag, Ca/Ag, Mg/Al, Al/Ag, the Al/Ga; The depositional mode of said understructure is sputter or ion plating, and the depositional mode of said superstructure is vapor deposition, magnetron sputtering or ion beam sputtering.
Said inorganic material is the cryogenic glass powder photosensitive pulp.
Said in method on said glass substrate the whole plate deposition Mo/Al/Mo mea layers of whole plate deposition low electrical resistant material on the glass substrate for adopting magnetron sputtering; 1) wet method of carving may further comprise the steps described in: a) on the Mo/Al/Mo mea layers, apply one deck positivity photoresistance, dry successively then, make public, develop; B) be mask with this photoresistance, etching Mo/Al/Mo electrode layer, etching solution are selected the phosphoric acid of 71wt.%, the nitric acid of 1.7wt.%, the glacial acetic acid of 9.95wt.% and the mixed liquor of deionized water for use, and four volumetric mixture ratio is 77: 3: 15: 5; C) etching of Mo/Al/Mo electrode layer after accomplishing is peeled off the photoresistance of top covering, and stripper is selected the mixed liquor of MEA and DMSO for use, and the volume ratio of MEA and DMSO is 7: 3.
To achieve these goals, the present invention can also adopt following technical scheme: a kind of manufacture method of film type FED (Field Emission Display) bottom substrate may further comprise the steps:
1) understructure of preparation first electrode: a transparent glass substrate is provided; Whole plate deposition low electrical resistant material on glass substrate utilizes wet method of carving to form the understructure of strip then earlier;
2) preparation first insulating barrier and second insulating barrier: select the positivity photoresistance for use, utilize mask, little shadow forming technique, form first insulating barrier of waffle-like pattern; Select the negativity photoresistance for use, utilize mask, little shadow forming technique forms trapezoidal strip second insulating barrier;
3) superstructure of preparation the second electrode lay and first electrode layer: adopt the whole plate deposition of the method the second electrode lay of vacuum evaporation, utilize between the height official post the second electrode lay lines of second insulating barrier separately; Then utilize the mask plate shielding the second electrode lay, deposition one deck low work function material is as the emissive material of FED, and this layer low work function material promptly is the superstructure of first electrode layer.
Said low electrical resistant material is a kind of among Cr, Al, Mo/Al, Mo/Al/Mo, Ag, Cu, ITO, the IZO, and said low work function material is a kind of among Al, Li/Al, LiF, Mg/Ag, Ca/Ag, Mg/Al, Al/Ag, the Al/Ga.
The depositional mode of the understructure of said first electrode layer is sputter or ion plating, and the depositional mode of said superstructure is vapor deposition, magnetron sputtering or ion beam sputtering.
Said in method on said glass substrate the whole plate deposition IZO mea layers of whole plate deposition low electrical resistant material on the glass substrate for adopting magnetron sputtering; 1) wet method of carving may further comprise the steps described in: a) on the IZO mea layers, evenly apply one deck positivity photoresistance, carry out drying, exposure, development, drying then successively; B) be mask with said photoresistance, etching IZO electrode layer, etching solution are selected the mixed liquor of hydrochloric acid, 1.6wt.% nitric acid and the deionized water of 17.6wt.% for use, and the volume ratio of hydrochloric acid, nitric acid, deionized water is 1: 0.08: 1; B) etching of IZO mea layers after accomplishing is peeled off the photoresistance of top covering, and stripper is selected the mixed liquor of MEA and DMSO for use, and the volume ratio of MEA and DMSO is 7: 3.
Compared with prior art, the present invention has the following advantages: effectively prevent the generation of the moon, gate short, breaking phenomena, improve the product emitting performance.
Description of drawings
Fig. 1 is the structural representation behind substrate deposition first electrode;
Fig. 2 is the cutaway view along A-A line among Fig. 1;
Fig. 3 is the structural representation behind making first insulating barrier;
Fig. 4 is the cutaway view along B-B line among Fig. 3;
Fig. 5 is the structural representation behind making second insulating barrier;
Fig. 6 is the cutaway view along C-C line among Fig. 5;
Fig. 7 is the structural representation behind the deposition the second electrode lay;
Wherein: 10 is substrate; 20 is first electrode layer; 30 is first insulating barrier; 40 is second insulating barrier; 50 is the second electrode lay; 201 is understructure; 202 is superstructure.
Embodiment
Please referring to figs. 1 through shown in 7, the FED infrabasal plate comprises substrate 10, first electrode layer 20, first insulating barrier 30, second insulating barrier 40, the second electrode lay 50.First electrode layer 20 comprises understructure 201 and superstructure 202.Understructure 201 is formed on the substrate 10, is strip and distributes; First insulating barrier 30 is formed on the understructure 201, and becomes distributed in grid; Second insulating barrier 40 is formed on first insulating barrier 30, into strips pattern distribution; The second electrode lay 50 is formed on second insulating barrier 40.Wherein substrate 10 can be glass substrate; First electrode layer 20 and the second electrode lay 50 are respectively as the negative electrode and the grid of FED field-emitter display; Wherein the emissive material of negative electrode adopts lower metal or the metallic compound of work function, and grid adopts less metal or the metallic compound of resistance.Between grid and negative electrode, apply the electric field of certain intensity, electronics is drawn from negative electrode, under the effect of negative electrode and anode electric field, and the light-emitting phosphor on the high-speed motion bombardment positive plate, thus realize that image shows.
First insulating barrier 30 and second insulating barrier 40 can be that inorganic material also can be the organic photo material.Inorganic material can adopt the printing process moulding, and organic material can adopt coating, the moulding of little shadow technology.If select the inorganic material printing process for use, preferred cryogenic glass powder photosensitive pulp forms latticed first insulating barrier 30 and is superimposed upon bar shaped second insulating barrier 40 on 30.If adopt the organic photo material, first insulating barrier 30 can be selected the positivity photoresistance for use, utilizes mask, and little shadow forming technique forms waffle-like pattern, and each grid part is as an electron emission unit.Second insulating barrier 40 can be selected the negativity photoresistance for use, utilizes mask, and little shadow forming technique forms trapezoidal strip pattern, and its second insulating barrier 40 is formed on first insulating barrier 30.Utilize vapor deposition, magnetron sputtering or ion beam sputtering on second insulating barrier 40, to form the second electrode lay 50, the pattern of the second electrode lay 50 is consistent with the pattern of second insulating barrier 40.
For content of the present invention is more readily understood, below give an example and explain.
Embodiment 1
Film type FED (Field Emission Display) bottom substrate manufacture method of the present invention comprises following several steps:
See also Fig. 1 to shown in Figure 2, the first step: a transparent glass substrate 10 is provided, and the understructure 201,201 that on this substrate, forms first electrode 20 is the strip electrode pattern, selects the material of Mo/Al/Mo as understructure 201 for use.The formation method of understructure 201 is:
A) on glass substrate 10, put in order plate deposition Mo/Al/Mo mea layers with the method for magnetron sputtering earlier;
B) evenly apply one deck positivity photoresistance above the electrode layer at this, carry out drying, exposure, development, drying then successively;
C) be mask with this photoresistance, etching Mo/Al/Mo electrode layer, etching solution are selected the phosphoric acid of 71wt.%, the nitric acid of 1.7wt.%, the glacial acetic acid of 9.95wt.% and the mixed liquor of deionized water for use, and four volumetric mixture ratio is 77: 3: 15: 5;
D) etching of Mo/Al/Mo electrode layer after accomplishing is peeled off the photoresistance of top covering, and stripper is selected the mixed liquor of MEA (MEA) and DMSO (dimethyl sulfoxide (DMSO)) for use, and the volume ratio of MEA and DMSO is 7: 3;
Accomplish the pattern that above step forms understructure 201.
See also Fig. 3 to shown in Figure 6, second step: form first insulating barrier 30 and second insulating barrier 40.The method that insulating barrier is selected low temperature photosensitive glass powder slurry printing moulding for use in the present embodiment is to form first insulating barrier 30, and technological process is printing, exposure, development, sintering, and developer solution adopts the Na of 0.3wt.%
2CO
3The aqueous solution, 350 ℃ of sintering temperatures; Form latticed first insulating barrier, 30 structures.Repeat above-mentioned technological process, on first insulating barrier 30, form strip second insulating barrier 40 structures.
See also shown in Figure 7, the 3rd step: the superstructure 202 of deposition the second electrode lay 50 and first electrode layer 20.In the process of deposition the second electrode lay 50, need not to use mask, can put in order plate deposition, utilize between these electrode layer lines of height official post of second insulating barrier 40 separately.The formation method of the second electrode lay 50 is for adopting method depositing Al electrode on second insulating barrier 40 of magnetron sputtering, and the Al electrode above second insulating barrier 40 is the second electrode lay 50; Then utilize mask plate shielding the second electrode lay 50, with the emissive material of the method for vacuum evaporation deposition one deck low work function material Mg/Ag alloy as FED, the superstructure 202 that this Mg/Ag emissive material promptly is first electrode layer 20.So far the FED infrabasal plate completes.
Embodiment 2
Film type FED (Field Emission Display) bottom substrate manufacture method of the present invention comprises following several steps:
See also Fig. 1 to shown in Figure 2, the first step: a transparent glass substrate 10 is provided, and the understructure 201,201 that on this substrate, forms first electrode 20 is the strip electrode pattern, selects the material of Cr as understructure 201 for use.The formation method of understructure 201 is:
A) on glass substrate 10, put in order plate deposition Cr mea layers with the method for magnetron sputtering earlier;
B) evenly apply one deck positivity photoresistance above the electrode layer at this, carry out drying, exposure, development, drying then successively;
C) be mask with this photoresistance, etching Cr electrode layer, etching solution are selected general Cr etching solution for use;
D) etching of Cr electrode layer after accomplishing is peeled off the photoresistance of top covering, and stripper is selected the mixed liquor of MEA (MEA) and DMSO (dimethyl sulfoxide (DMSO)) for use, and the volume ratio of MEA and DMSO is 7: 3;
Accomplish the pattern that above step forms understructure 201.
See also Fig. 3 to shown in Figure 6, second step: form first insulating barrier 30 and second insulating barrier 40.The method that insulating barrier is selected low temperature photosensitive glass powder slurry printing moulding for use in the present embodiment is to form first insulating barrier 30, and technological process is printing, exposure, development, sintering, and developer solution adopts the Na of 0.5wt.%
2CO
3The aqueous solution, 360 ℃ of sintering temperatures; Form latticed first insulating barrier, 30 structures.Repeat above-mentioned technological process, on first insulating barrier 30, form strip second insulating barrier 40 structures.
See also shown in Figure 7, the 3rd step: the superstructure 202 of deposition the second electrode lay 50 and first electrode layer 20.In the process of deposition the second electrode lay 50, need not to use mask, can put in order plate deposition, utilize between these electrode layer lines of height official post of second insulating barrier 40 separately.The formation method of the second electrode lay 50 is for adopting method depositing Al electrode on second insulating barrier 40 of magnetron sputtering, and the Al electrode above second insulating barrier 40 is the second electrode lay 50; Then utilize mask plate shielding the second electrode lay 50, with the emissive material of the method for vacuum evaporation deposition one deck low work function material Ca/Ag alloy as FED, the superstructure 202 that this Ca/Ag emissive material promptly is first electrode layer 20.So far the FED infrabasal plate completes.
Embodiment 3
Film type FED (Field Emission Display) bottom substrate manufacture method of the present invention comprises following several steps:
The first step: a transparent glass substrate 10 is provided, and the understructure 201,201 that on this substrate, forms first electrode 20 is the strip electrode pattern, selects the material of IZO as understructure 201 for use.The formation method of understructure 201 is:
A) on glass substrate 10, put in order plate deposition IZO mea layers with the method for magnetron sputtering earlier;
B) apply one deck positivity photoresistance above the electrode layer at this, carry out drying, exposure, development, drying then successively;
C) be mask with this photoresistance, etching IZO electrode layer, etching solution are selected the mixed liquor of hydrochloric acid, 1.6wt.% nitric acid and the deionized water of 17.6wt.% for use, and the volume ratio of hydrochloric acid, nitric acid, deionized water is 1: 0.08: 1;
D) etching of IZO electrode layer after accomplishing is peeled off the photoresistance of top covering, and stripper is selected the mixed liquor of MEA (MEA) and DMSO (dimethyl sulfoxide (DMSO)) for use, and the volume ratio of MEA and DMSO is 7: 3; Accomplish the pattern that above step forms understructure 201.
See also Fig. 3 to shown in Figure 6, second step: form first insulating barrier 30 and second insulating barrier 40.Insulating barrier adopts organic material in the present embodiment, selects for use the method for positivity photoresistance coating molding to form first insulating barrier 30, and technological process is coating, exposure, development, post bake, and developer solution can be used the TMAH aqueous solution of 2.38wt.%, 150 ℃ of post bake temperature; Form latticed first insulating barrier, 30 structures.Repeat above-mentioned technological process, change the negativity photoresistance into, on first insulating barrier 30, form strip second insulating barrier 40 structures.
See also shown in Figure 7, the 3rd step: the superstructure of deposition the second electrode lay 50 and first electrode layer 20.In the process of deposition the second electrode lay 50, need not to use mask, can put in order plate deposition, utilize between these electrode layer lines of height official post of second insulating barrier 40 separately.The formation method of the second electrode lay 50 adopts method depositing Al electrode on second insulating barrier 40 of vacuum evaporation, and the Al electrode above second insulating barrier 40 is the second electrode lay 50; Then utilize mask plate shielding the second electrode lay 50, with the emissive material of the method for magnetron sputtering deposition one deck low work function material LiF as FED, the superstructure 202 that this LiF emissive material promptly is first electrode layer 20.So far the FED infrabasal plate completes.
Embodiment 4
Film type FED (Field Emission Display) bottom substrate manufacture method of the present invention comprises following several steps:
The first step: a transparent glass substrate 10 is provided, and the understructure 201,201 that on this substrate, forms first electrode 20 is the strip electrode pattern, selects the material of ITO as understructure 201 for use.The formation method of understructure 201 is:
A) on glass substrate 10, put in order plate deposition ito thin film electrode layer with the method for magnetron sputtering earlier;
B) apply one deck positivity photoresistance above the electrode layer at this, carry out drying, exposure, development, drying then successively;
C) be mask with this photoresistance, etching ITO electrode layer, etching solution are selected general ITO etching solution for use;
D) etching of ITO electrode layer after accomplishing is peeled off the photoresistance of top covering, and stripper is selected the mixed liquor of MEA (MEA) and DMSO (dimethyl sulfoxide (DMSO)) for use, and the volume ratio of MEA and DMSO is 7: 3; Accomplish the pattern that above step forms understructure 201.
See also Fig. 3 to shown in Figure 6, second step: form first insulating barrier 30 and second insulating barrier 40.Insulating barrier adopts organic material in the present embodiment, selects for use the method for positivity photoresistance coating molding to form first insulating barrier 30, and technological process is coating, exposure, development, post bake, and developer solution can be used the TMAH aqueous solution of 2.38wt.%, 150 ℃ of post bake temperature; Form latticed first insulating barrier, 30 structures.Repeat above-mentioned technological process, change the negativity photoresistance into, on first insulating barrier 30, form strip second insulating barrier 40 structures.
See also shown in Figure 7, the 3rd step: the superstructure of deposition the second electrode lay 50 and first electrode layer 20.In the process of deposition the second electrode lay 50, need not to use mask, can put in order plate deposition, utilize between these electrode layer lines of height official post of second insulating barrier 40 separately.The formation method of the second electrode lay 50 adopts method depositing Al electrode on second insulating barrier 40 of vacuum evaporation, and the Al electrode above second insulating barrier 40 is the second electrode lay 50; Then utilize mask plate shielding the second electrode lay 50, with the emissive material of the method for magnetron sputtering deposition one deck low work function material Li/Al as FED, the superstructure 202 that this Li/Al emissive material promptly is first electrode layer 20.So far the FED infrabasal plate completes.
Claims (9)
1. the manufacture method of a film type FED (Field Emission Display) bottom substrate is characterized in that, may further comprise the steps:
1) understructure of preparation first electrode (20): substrate (10) is provided, and this substrate (10) is a transparent glass substrate; Whole plate deposition low electrical resistant material on glass substrate utilizes wet method of carving to form the understructure (201) of first electrode of strip then earlier;
2) preparation first insulating barrier (30) and second insulating barrier (40): adopt the method for inorganic material printing moulding to form latticed first insulating barrier (30), technological process is printing, exposure, development, sintering; Adopt the method for inorganic material printing moulding to form down trapezoidal strip second insulating barrier (40), technological process is printing, exposure, development, sintering;
3) superstructure (202) of preparation the second electrode lay (50) and first electrode layer (20): adopt the whole plate deposition of the method the second electrode lay (50) of sputter or vacuum evaporation, utilize between height official post the second electrode lay (50) lines of second insulating barrier and first insulating barrier and separate; Then utilize mask plate shielding the second electrode lay (50), deposition one deck low work function material is as the emissive material of FED, and this layer low work function material promptly is the superstructure (202) of first electrode layer (20).
2. the manufacture method of film type FED (Field Emission Display) bottom substrate according to claim 1, it is characterized in that: said low electrical resistant material is a kind of among Cr, Al, Mo/Al, Mo/Al/Mo, Ag, Cu, ITO, the IZO.
3. the manufacture method of film type FED (Field Emission Display) bottom substrate according to claim 1; It is characterized in that: said low work function material is a kind of among Al, Li/Al, LiF, Mg/Ag, Ca/Ag, Mg/Al, Al/Ag, the Al/Ga; The depositional mode of said understructure (201) is sputter or ion plating, and the depositional mode of said superstructure (202) is vapor deposition, magnetron sputtering or ion beam sputtering.
4. the manufacture method of film type FED (Field Emission Display) bottom substrate according to claim 1, it is characterized in that: said inorganic material is the cryogenic glass powder photosensitive pulp.
5. the manufacture method of film type FED (Field Emission Display) bottom substrate according to claim 1 is characterized in that: said in method on said glass substrate the whole plate deposition Mo/Al/Mo mea layers of whole plate deposition low electrical resistant material on the glass substrate for adopting magnetron sputtering; 1) wet method of carving may further comprise the steps described in: a) on the Mo/Al/Mo mea layers, apply one deck positivity photoresistance, dry successively then, make public, develop; B) be mask with above-mentioned photoresistance, etching Mo/Al/Mo electrode layer, etching solution are selected the phosphoric acid of 71wt.%, the nitric acid of 1.7wt.%, the glacial acetic acid of 9.95wt.% and the mixed liquor of deionized water for use, and four volumetric mixture ratio is 77: 3: 15: 5; C) etching of Mo/Al/Mo electrode layer after accomplishing is peeled off the photoresistance of top covering, and stripper is selected the mixed liquor of MEA (MEA) and dimethyl sulfoxide (DMSO) (DMSO) for use, and the volume ratio of MEA (MEA) and dimethyl sulfoxide (DMSO) (DMSO) is 7: 3.
6. the manufacture method of a film type FED (Field Emission Display) bottom substrate is characterized in that, may further comprise the steps:
(1) understructure of preparation first electrode (20): a substrate (10) is provided, and this substrate is a transparent glass substrate; Whole plate deposition low electrical resistant material on glass substrate utilizes wet method of carving to form the understructure (201) of strip then earlier;
(2) preparation first insulating barrier (30) and second insulating barrier (40): select the positivity photoresistance for use, utilize mask, little shadow forming technique, first insulating barrier (30) of formation waffle-like pattern; Select the negativity photoresistance for use, utilize mask, little shadow forming technique forms trapezoidal strip second insulating barrier (40);
(3) superstructure (202) of preparation the second electrode lay (50) and first electrode layer (20): adopt the whole plate deposition of the method the second electrode lay (50) of vacuum evaporation, utilize between height official post the second electrode lay (50) lines of second insulating barrier and first insulating barrier and separate; Then utilize mask plate shielding the second electrode lay (50), deposition one deck low work function material is as the emissive material of FED, and this layer low work function material promptly is the superstructure (202) of first electrode layer (20).
7. like the manufacture method of the said film type FED (Field Emission Display) bottom substrate of claim 6; It is characterized in that: said low electrical resistant material is a kind of among Cr, Al, Mo/Al, Mo/Al/Mo, Ag, Cu, ITO, the IZO, and said low work function material is a kind of among Al, Li/Al, LiF, Mg/Ag, Ca/Ag, Mg/Al, Al/Ag, the Al/Ga.
8. like the manufacture method of the said film type FED (Field Emission Display) bottom substrate of claim 6; It is characterized in that: the depositional mode of the understructure of said first electrode layer (201) is sputter or ion plating, and the depositional mode of said superstructure (202) is vapor deposition, magnetron sputtering or ion beam sputtering.
9. like the manufacture method of the said film type FED (Field Emission Display) bottom substrate of claim 6, it is characterized in that: said in method whole plate deposition IZO mea layers on said glass substrate of whole plate deposition low electrical resistant material on the glass substrate for adopting magnetron sputtering; 1) wet method of carving may further comprise the steps described in: a) on the IZO mea layers, evenly apply one deck positivity photoresistance, dry successively then, make public, develop; B) be mask with said photoresistance, etching IZO electrode layer, etching solution are selected the mixed liquor of hydrochloric acid, 1.6wt.% nitric acid and the deionized water of 17.6wt.% for use, and the volume ratio of hydrochloric acid, nitric acid, deionized water is 1: 0.08: 1; C) etching of IZO mea layers after accomplishing is peeled off the photoresistance of top covering, and stripper is selected the mixed liquor of MEA (MEA) and dimethyl sulfoxide (DMSO) (DMSO) for use, and the volume ratio of MEA (MEA) and dimethyl sulfoxide (DMSO) (DMSO) is 7: 3.
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| CN106211566A (en) * | 2016-08-29 | 2016-12-07 | 广州市祺虹电子科技有限公司 | A kind of transparent circuit board |
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| US6045425A (en) * | 1997-03-18 | 2000-04-04 | Vlsi Technology, Inc. | Process for manufacturing arrays of field emission tips |
| US6075315A (en) * | 1995-03-20 | 2000-06-13 | Nec Corporation | Field-emission cold cathode having improved insulating characteristic and manufacturing method of the same |
| CN1750222A (en) * | 2004-09-14 | 2006-03-22 | 三星Sdi株式会社 | Field emission device (FED) and its method of manufacture |
| CN1909156A (en) * | 2006-08-02 | 2007-02-07 | 中原工学院 | Flexural probe type grid control cathode structural panel display device and its production technique |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3235512B2 (en) * | 1997-05-09 | 2001-12-04 | 日本電気株式会社 | Field emission cold cathode and method of manufacturing the same |
| JP4429193B2 (en) * | 2005-03-14 | 2010-03-10 | 三菱電機株式会社 | Manufacturing method of field emission electron source |
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|---|---|---|---|---|
| US6075315A (en) * | 1995-03-20 | 2000-06-13 | Nec Corporation | Field-emission cold cathode having improved insulating characteristic and manufacturing method of the same |
| US6045425A (en) * | 1997-03-18 | 2000-04-04 | Vlsi Technology, Inc. | Process for manufacturing arrays of field emission tips |
| CN1750222A (en) * | 2004-09-14 | 2006-03-22 | 三星Sdi株式会社 | Field emission device (FED) and its method of manufacture |
| CN1909156A (en) * | 2006-08-02 | 2007-02-07 | 中原工学院 | Flexural probe type grid control cathode structural panel display device and its production technique |
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| JP特开2006-253065A 2006.09.21 |
| JP特开平10-308163A 1998.11.17 |
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