CN101805895B - Helicon wave plasma enhanced chemical vapor deposition unit - Google Patents
Helicon wave plasma enhanced chemical vapor deposition unit Download PDFInfo
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- CN101805895B CN101805895B CN2010101362336A CN201010136233A CN101805895B CN 101805895 B CN101805895 B CN 101805895B CN 2010101362336 A CN2010101362336 A CN 2010101362336A CN 201010136233 A CN201010136233 A CN 201010136233A CN 101805895 B CN101805895 B CN 101805895B
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Abstract
The invention provides a helicon wave plasma enhanced chemical vapor deposition unit, belonging to the technical field of plasma processing units, in order to achieve the stability and effective feed-in of radio-frequency power and effectively prevent the mode of the helicon wave plasma from hopping. The technical scheme of the invention is as follows that: the helicon wave plasma enhanced chemical vapor deposition unit comprises an external high-voltage power supply, an antenna for exciting the helicon wave plasma, an insulating dielectric tube, a high-vacuum cavity, a coil and an auxiliary coil, wherein the insulating dielectric tube is provided with an air inlet and an inlet air controlling device, and the high-vacuum cavity is provided with a ring-shaped nozzle and a heater; a self-excited radio-frequency oscillating circuit is connected between the external high-voltage power supply and the antenna for exciting the helicon wave plasma. By coupling the radio-frequency electromagnetic field with the helicon wave plasma in a self-excited oscillation manner, the invention can effectively prevent the mode of the helicon wave plasma from hopping, make the generated helicon wave plasma more stable and exploit new development potential for the application of the helicon wave plasma; and the invention further has the advantages of simple circuits, convenient adjustment and low construction cost.
Description
Technical field
The present invention relates to a kind of preparation and have the Helicon wave plasma enhanced chemical vapor deposition unit that properties such as light, electricity and magnetic require film, belong to the plasma processing device technical field.
Background technology
The producing method of low pressure plasma is generally passed through direct current, exchange, radio frequency, geseous discharge forms such as microwave realize, the radio-frequency plasma geseous discharge is because of adopting condenser coupling and jigger coupling mode, have lower sparking voltage and low operating air pressure, realize plasma density easily, characteristics such as temperature controlling, synthetic at semiconductor material, etching and processing and other fields have obtained widespread use, low pressure radio-frequency plasma chemical vapour deposition technique is the ionization that using plasma is realized chemical reaction gas, decompose and excite, realize the deposition of solid film by exciting chemical reaction.This technology is because of can easily exciting in the compound nanometer thin film material is synthetic of realization response gas also having obtained widespread use.Helicon wave plasma is to utilize low pressure discharge to produce one of principal mode of high density plasma, 10
-2Its plasma density can reach 10 under the subatmospheric of Pa magnitude
13Cm
-3Magnitude has high ionization and high exciting characteristic to reactant gases, has with respect to the implementation of the Ecr plasma of similar characteristics that required equipment is simple, magnetic field is low, and parameter can be accomplished in several ways characteristics such as adjustment.Obtained widespread use in material processing field such as plasma etching, plasma activated chemical vapour deposition and auxiliary sputters.At present, Helicon wave plasma generating unit of the prior art all is to connect external radio frequency power supply and antenna realization radio frequency electromagnetic field and the Helicon wave plasma coupled that is excited by the independent-excited method, this mode all needs match box or matching network could realize effective feed-in of radio frequency power, and has the moding phenomenon of Helicon wave plasma.
Summary of the invention
Technical problem to be solved by this invention provides a kind of mode hopping phenomenon that can realize the stable of radio frequency power and effectively feed-in, can effectively prevent Helicon wave plasma, makes the more stable Helicon wave plasma enhanced chemical vapor deposition unit of Helicon wave plasma that is produced.
The technical scheme that solves the problems of the technologies described above is:
A kind of Helicon wave plasma enhanced chemical vapor deposition unit, it comprises the external high pressure power supply, excite the antenna of Helicon wave plasma, insulation dielectric pipe, high vacuum cavity, coil, ancillary coil, insulation dielectric pipe and high vacuum cavity are provided with air inlet port and Intaker controller, ring nozzle and the well heater of feed-in reactant gases respectively, its improvements are, externally high-voltage power supply and excite between the antenna of Helicon wave plasma and be connected with self-excited type strength circuit.
Above-mentioned Helicon wave plasma enhanced chemical vapor deposition unit, described self-excited type strength circuit is made up of feedback loop, heater supply and tank, the output terminal of external high pressure power supply connects tank, the output terminal of tank connects aerial coil, externally be connected with reaction circuit between high-voltage power supply and the tank, heater supply is connected in the tank.
Above-mentioned Helicon wave plasma enhanced chemical vapor deposition unit, tank is made up of oscillator tube G, reactance coil ZL, inductance L, adjustable resistance W, resistance R, capacitor C 1, C2, C3, C4, C5, C6, the negative electrode of oscillator tube connects heater supply, anode is connected on the connection line of high-voltage power supply and antenna, grid connects the matching circuit of inductance L, resistance R, capacitor C 3, C4, C5 composition, also be in series with high-frequency chocke ZL, stopping condenser C1 on the connection line of high-voltage power supply and antenna, variable capacity C2 and antenna are in parallel.
The present invention utilizes the coupling of self-excited type mode of oscillation realization radio frequency electromagnetic field and Helicon wave plasma, can effectively prevent the mode hopping phenomenon of Helicon wave plasma, makes the Helicon wave plasma that is produced more stable; Simultaneously, the present invention utilize low operating air pressure, the high plasma density of Helicon wave plasma and can realize to the preparation film surface provide low ion carry can special performance, it can provide the thermodynamic condition that is satisfied of compound nano particle self-assembly, for new development space has been opened up in the application of Helicon wave plasma; The present invention also has advantages such as circuit is simple, debugging is put just, cheap.
Description of drawings
Fig. 1 is a structural representation of the present invention;
Fig. 2 is a self-excited type strength circuit electricity functional-block diagram of the present invention;
Fig. 3 is a tank schematic circuit of the present invention.
Mark is as follows among the figure: 1, high vacuum cavity 2, insulation dielectric pipe are provided with coil 3, ancillary coil 4, antenna 5, insulation dielectric pipe 6, well heater 7, ring nozzle 8, air inlet port 9, Intaker controller 10, self-excited oscillation circuit 11, pumped vacuum systems 12, temperature-controlled power 13, high-voltage power supply 14, feedback loop 15, heater supply 16, tank outward
Embodiment
Shown in Figure 1, the present invention is a kind of self-excited type Helicon wave plasma enhanced chemical vapor deposition unit, it comprises high-voltage power supply 13, self-excited oscillation circuit 10 and the antenna 4 that is used to excite Helicon wave plasma, pumped vacuum systems 11 is as the insulation dielectric pipe 5 of Helicon wave plasma generating chamber and the coupled high vacuum cavity 1 as plasma enhanced chemical gas-phase reaction chamber.The insulation dielectric pipe 5 outer coils 2 that are provided with are used to produce axial magnetic field to satisfy the condition of helicon transmission, the high vacuum cavity 1 outer ancillary coil 3 that is used to produce confining magnetic field that is provided with, insulation dielectric pipe 5 and high vacuum cavity 1 are provided with the air inlet port 8 and the Intaker controller 9 of feed-in reactant gases respectively, the ring nozzle 7 of feed-in reactant gases is set in the high vacuum cavity 1 and is used for the well heater 6 that substrate heats up, well heater 6 temperature are by temperature-controlled power 12 controls.
Insulation dielectric pipe 5 of the present invention can be that the cylindrical tubing of quartz, glass or stupalith is made.High vacuum cavity 3 can be cavity cylinder or cavity prism, can be that aluminium, copper or stainless steel metal material are made, and also the cylindrical tubing of the cavity of the quartz that can be, glass or stupalith is made.The insulation dielectric pipe is provided with coil 2 outward and ancillary coil 3 can adopt cored or do not have the Lorentz coil of iron core to make, and can adopt one or more coils, and the mode of setting can adopt symmetric form, also can be unsymmetric form.Insulation dielectric pipe 5 and high vacuum cavity 1 are provided with the air inlet port 8 and the Intaker controller 9 of feed-in reactant gases respectively separately, and the mode of setting can adopt metal flange type of attachment or air inlet port type of attachment.Ring nozzle 7 is that insulative dielectric material such as quartz, glass or pottery are made, and the mode of setting is for axially being symmetrical arranged.Well heater 6 links to each other with temperature-controlled power 12, and type of heating can adopt thermal resistance mode or thermal radiation mode, and the surface of well heater 6 adopts copper or stainless material to make.
Shown in Figure 2, self-excited oscillation circuit 10 of the present invention comprises feedback loop 14, heater supply 15, tank 16.The output terminal of high-voltage power supply 13 connects tank 16, and the output terminal of tank 16 connects antenna 4 coils, is connected with reaction circuit 14 between high-voltage power supply 13 and tank 16, and heater supply 15 is connected in the tank 16.The oscillation frequency of this oscillatory circuit is 30MHz, and output rating is that 0～3500W is adjustable continuously.
Shown in Figure 3, tank 16 is made up of oscillator tube G, reactance coil ZL, inductance L, adjustable resistance W, resistance R, capacitor C 1, C2, C3, C4, C5, C6.In tank 16, G is oscillator tube (a FU-5S type), and C1 is a stopping condenser, and C2 is a tank capacitance, C3 is a grid bypass electric capacity, and C4, C6 are feedthrough capacitor, and C5 is a grid table shunt capacitance, and L is the grid leak inductance, W is adjustable grid leak resistance, and R is a grid leak resistance, and ZL is a high-frequency chocke.Their annexation is: the negative electrode of oscillator tube connects heater supply, anode is connected on the connection line of high-voltage power supply and antenna, grid connects the matching circuit of inductance L, resistance R, capacitor C 3, C4, C5 composition, also be in series with high-frequency chocke ZL, stopping condenser C1 on the connection line of high-voltage power supply and antenna, variable capacity C2 and antenna are in parallel.
The part component specification of one embodiment of the present of invention is as follows:
It is that the 7cm height is the silica tube of 18cm that insulation dielectric pipe 5 adopts diameter;
High vacuum cavity 10 usefulness stainless steels are made, and height is 250cm, and diameter is 250cm;
Well heater 6 uses a resistance type heater to heat, and by temperature-controlled power 12 control heater temperature, its temperature can be regulated in the 20-800oC scope;
Air inlet port 8 and ring nozzle 7 all adopt quartzy material, and Intaker controller 9 is the multichannel mass flow controller;
Used magnetic field is made up of three coils, the internal diameter of wherein top two coils 2 is 12.4cm, external diameter is 20.5cm, height is 4cm, the two forms a Helmholtz coil, when the additional power source electric current is 10A at a distance of 8cm, can produce about 200 Gausses' magnetic induction density between two coils, these two coils provide prerequisite for the generation of Helicon wave plasma; The internal diameter that the 3rd coil is ancillary coil 3 is 23cm, and external diameter is 26cm, and height is 5.5cm, when impressed current is 10A, can form 64 Gausses' magnetic induction density at the place, axle center, play a part about beam electrons;
Mechanical pump and turbomolecular pump are formed pumped vacuum systems 11, and background pressure reaches 10
-4The magnitude of Pa makes the gas that is injected in the reaction chamber by the fine setting intake valve during experiment, makes to keep certain pressure in the reaction chamber.
Listed examples of the present invention is intended to further illustrate this Helicon wave plasma enhanced chemical vapor deposition unit and application direction, and scope of the present invention is not constituted any restriction.
Claims (2)
1. Helicon wave plasma enhanced chemical vapor deposition unit, it comprises external high pressure power supply (13), excites the antenna (4) of Helicon wave plasma, insulation dielectric pipe (5), high vacuum cavity (1), coil (2), ancillary coil (3), insulation dielectric pipe and high vacuum cavity are provided with air inlet port (8) and Intaker controller (9), ring nozzle (7) and the well heater (6) of feed-in reactant gases respectively, it is characterized in that: high-voltage power supply (13) and excite the returning of antenna (4) of Helicon wave plasma be connected with self-maintained circuit (10) externally;
Described self-maintained circuit (10) is made up of feedback loop (14), heater supply (15), tank (16), the output terminal of external high pressure power supply (13) connects tank (16), the output terminal of tank (16) connects antenna (4) coil, externally be connected with reaction circuit (14) between high-voltage power supply (13) and the tank (16), heater supply (15) is connected in the tank (16).
2. Helicon wave plasma enhanced chemical vapor deposition unit according to claim 1, it is characterized in that: tank (16) is by oscillator tube G, reactance coil ZL, inductance L, adjustable resistance W, resistance R, capacitor C 1, C2, C3, C4, C5, C6 forms, the negative electrode of oscillator tube connects heater supply (15), anode is connected on the connection line of external high pressure power supply (13) and antenna (4), grid connects inductance L, resistance R, capacitor C 3, C4, the matching circuit that C5 forms, on the connection line of high-voltage power supply (13) and antenna (4), also be in series with high-frequency chocke ZL, stopping condenser C1, variable capacity C2 and antenna (4) are in parallel.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2010101362336A CN101805895B (en) | 2010-03-31 | 2010-03-31 | Helicon wave plasma enhanced chemical vapor deposition unit |
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| CN2010101362336A CN101805895B (en) | 2010-03-31 | 2010-03-31 | Helicon wave plasma enhanced chemical vapor deposition unit |
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| CN101805895B true CN101805895B (en) | 2011-09-07 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9734990B2 (en) | 2011-10-13 | 2017-08-15 | Korea Advanced Institute Of Science And Technology | Plasma apparatus and substrate-processing apparatus |
| US9960011B2 (en) | 2011-08-01 | 2018-05-01 | Plasmart Inc. | Plasma generation apparatus and plasma generation method |
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| CN102395243A (en) * | 2011-10-19 | 2012-03-28 | 中微半导体设备(上海)有限公司 | Inductance coupling plasma device for improving uniformity and efficiency of plasmon |
| KR20140087215A (en) * | 2012-12-28 | 2014-07-09 | 주식회사 윈텔 | Plasma generation apparatus and substrate processing apparatus |
| CN105226374B (en) * | 2015-09-02 | 2018-06-08 | 苏州大学 | A kind of helicon antenna system |
| CN108990245B (en) * | 2018-06-04 | 2021-01-12 | 台州学院 | Small-size adjustable plasma source in area |
| CN110729165B (en) * | 2018-07-17 | 2022-05-27 | 北京北方华创微电子装备有限公司 | Inductive coupling device, process chamber and semiconductor processing equipment |
| CN110545612B (en) * | 2019-09-04 | 2021-12-28 | 北京航空航天大学 | Multi-stage ionization rotating magnetic field acceleration helicon plasma source |
| CN112072319B (en) * | 2020-08-31 | 2022-03-01 | 泉州师范学院 | Preparation method of metal plasmon nanometer optical antenna |
| CN115110025B (en) * | 2022-07-20 | 2023-10-20 | 苏州大学 | Method for depositing tungsten nitride film by helicon wave plasma sputtering |
| CN115261816A (en) * | 2022-09-05 | 2022-11-01 | 西安交通大学 | Cantilever beam type vibration plasma fluidized bed for diamond-like carbon deposition on powder surface |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9960011B2 (en) | 2011-08-01 | 2018-05-01 | Plasmart Inc. | Plasma generation apparatus and plasma generation method |
| US9734990B2 (en) | 2011-10-13 | 2017-08-15 | Korea Advanced Institute Of Science And Technology | Plasma apparatus and substrate-processing apparatus |
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| CN101805895A (en) | 2010-08-18 |
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