CN101800274B - Method for manufacturing semiconductor element with concave-convex base plate - Google Patents
Method for manufacturing semiconductor element with concave-convex base plate Download PDFInfo
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- CN101800274B CN101800274B CN200910007311XA CN200910007311A CN101800274B CN 101800274 B CN101800274 B CN 101800274B CN 200910007311X A CN200910007311X A CN 200910007311XA CN 200910007311 A CN200910007311 A CN 200910007311A CN 101800274 B CN101800274 B CN 101800274B
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- semiconductor element
- base plate
- concave
- manufacture method
- convex base
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Abstract
The invention discloses a method for manufacturing a semiconductor element with a concave-convex base plate. The semiconductor element is provided with a base plate and a plurality of semiconductor layers, wherein the base plate comprises a plurality of first convex parts. The manufacture method comprises the following steps of: forming first oxidation layers on the base plate; coating a plurality of photoresistance parts on the first oxidation layers; etching part of the first oxidation layers to form a plurality of second convex parts; removing photoresistance layers and depositing second oxidation layers on the second convex parts and the base plate; etching the second oxidation layers and enabling the second oxidation layers to form cambered shapes on the edges of the second convex parts; and etching the cambered second oxidation layers, the second convex parts and the base plate to form the first convex parts.
Description
Technical field
The present invention relates to a kind of manufacture method of semiconductor element, particularly a kind of manufacture method with semiconductor element of concave-convex base plate.
Background technology
At present, light-emitting diode replaces existing lamp source gradually because of its power saving and durability advantages of higher.Light-emitting diode (LED) very extensively, optical display, traffic sign, data memory device, communicator and lighting device etc. such as.The LED of high brightness can bring better result of use, so how to increase the problem that the brightness of LED becomes present maximum.
The basic framework of light-emitting diode is a growth n type semiconductor layer on substrate, and luminescent layer, p type semiconductor layer and electrode etc., luminescent layer utilize electronics to penetrate outside with combining of electric hole to produce visible light.
In the prior art, light will produce reflection when being incident to electrode, p N-type semiconductor N interface or substrate surface with the angle more than the specific critical angle, in the process of this horizontal transmission, can consume the energy of incident light, cause the brightness decay of LED.So existing method is hemispherical or pyramid type etc. with the chip manufacture of LED, make the probability of incident light thus to reflect with the attenuating incident light less than the mode incident of specific critical angle, but the chip manufacture difficulty of LED, and easily produce the problem of chip damage.Moreover another kind of method is with the surface roughening of light-emitting diode, but this method also may be destroyed the p-n composition surface, causes the LED luminous efficiency to reduce.
In addition, substrate at LED in the prior art forms recess or protuberance, so that the light that luminescent layer sent produces scattering, and then the luminous efficiency of LED is improved, the method gives roughening by machinery or etching method with sapphire substrate, easily produce recessed/protuberance shape and vary in size, make the crystal of nitride attenuating of growing up on substrate, cause luminous efficiency to be not so good as expection.Further, formation has the processing procedure complexity of recessed/protuberance substrate, and program is numerous, causes a large amount of losses of cost and manpower.
TaiWan, China number of patent application 091116475 discloses a kind of substrate that possesses the recessed/protuberance of given shape, its recessed/protuberance by special angle and shape is so that the crystal of nitride raising on substrate of growing up, though the method is utilized cleverly recessed/protuberance side and positive both crystalline rate differences, to produce better crystalline nitride layer, but it is in the last stage that engages of nitride, easily the nitride joint because of side growth and vertical growth pushes mutually, or produces more defect concentration because of wayward environmental factor makes nitride layer.
The TaiWan, China patent No. 200518413 discloses a kind of semiconductor element and manufacture method thereof that possesses concave-convex base plate, and the protruding/recess on the substrate has inclination angle different more than two, precisely because make protruding/recess to make flow process too complicated, cost is raise.
Because every problem of prior art, in order to take into account solution, the inventor proposes a kind of manufacture method with semiconductor element of concave-convex base plate based on research and development and many practical experience for many years, with implementation and the foundation as the above-mentioned shortcoming of improvement.
Summary of the invention
In view of this, the object of the present invention is to provide a kind of manufacture method, to improve light-emitting diode luminance and to solve processing procedure program complicated problems with semiconductor element of concave-convex base plate.
According to purpose of the present invention, a kind of manufacture method with semiconductor element of concave-convex base plate is provided, described semiconductor element has substrate and a plurality of semiconductor layer, comprises a plurality of first protuberances on the substrate, and described manufacture method comprises: form first oxide layer on substrate; The coating photoresist layer is on first oxide layer; The exposure imaging photoresist layer is to form a plurality of photoresistance portion; Etching part first oxide layer is to form a plurality of second protuberances; Remove photoresist layer and deposit second oxide layer on described second protuberance and substrate; Etching second oxide layer and that second oxide layer is formed is circular-arc in the described second protuberance edge; And circular-arc second oxide layer, described second protuberance and the substrate of etching is to form described first protuberance.So can reduce the lattice defect of semiconductor layer, improve the quantum luminous efficiency, and can effectively improve the phenomenon of x-ray diffraction and scattering, to improve the luminous efficiency of light-emitting diode.Further, form recessed/protuberance at substrate surface and make semiconductor layer not produce the crystal defect that causes because of concavo-convex, can guarantee the quantum luminous efficiency of semiconductor element.The present invention can utilize simpler processing procedure to have the substrate of recessed/protuberance with manufacturing, to reduce the cost.
The present invention also provides a kind of manufacture method with semiconductor element of concave-convex base plate, and described semiconductor element has substrate and a plurality of semiconductor layer, comprises a plurality of first protuberances on the substrate, and described manufacture method comprises: the coating photoresist layer is on substrate; Form a plurality of photoresistance portion via the gold-tinted processing procedure to remove photoresist layer partly; The deposition of reflective layer is in described photoresistance portion; Float off reflector in (Lift-Off) described photoresistance portion and the described photoresistance portion to form a plurality of reflecting parts; And via oxidation process with the reflecting part oxidation to form described first protuberance.
Now further understand and understanding for those skilled in the art are had technical characterictic of the present invention and the effect that reached, careful assistant with preferred embodiment and cooperate detailed explanation as after.
Description of drawings
Figure 1A is the first embodiment flow chart of the manufacture method of the semiconductor element with concave-convex base plate of the present invention;
Figure 1B is the first embodiment substrate profile of the manufacture method of the semiconductor element with concave-convex base plate of the present invention;
Fig. 2 A is the second embodiment flow chart of the manufacture method of the semiconductor element with concave-convex base plate of the present invention;
Fig. 2 B is the second embodiment substrate profile of the manufacture method of the semiconductor element with concave-convex base plate of the present invention;
Fig. 3 A is the recessed/protuberance pattern vertical view of the manufacture method of the semiconductor element with concave-convex base plate of the present invention; And
Fig. 3 B is another recessed/protuberance pattern vertical view of the manufacture method of the semiconductor element with concave-convex base plate of the present invention.
[main symbol description]
S11～S17, S21～S25: steps flow chart;
10,20: substrate; 11,21,31: the first protuberances;
111,211: line segment; 112: circular arc line;
212: parallax; 22: reflecting part;
221: metal oxide.
Embodiment
Following with reference to relevant drawings, the manufacture method according to the semiconductor element with concave-convex base plate of the embodiment of the invention is described, to be convenient to understand for making, the same components among the following embodiment illustrates with identical symbology.
Figure 1A is the first embodiment flow chart of the manufacture method of the semiconductor element with concave-convex base plate of the present invention.Semiconductor element has substrate and a plurality of semiconductor layer, comprises a plurality of first protuberances on the substrate, and shown in Figure 1A, this manufacture method comprises: among the step S11, form first oxide layer on substrate; Among the step S12, the coating photoresist layer is on first oxide layer; Among the step S13, this photoresist layer of exposure imaging is to form a plurality of photoresistance portion; Among the step S14, first oxide layer that etching is not covered by described photoresistance portion is to form a plurality of second protuberances.
In step S15, remove photoresist layer and deposit second oxide layer on described second protuberance and substrate; Among the step S16, etching second oxide layer and that second oxide layer is formed is circular-arc in the described second protuberance edge makes the edge of second protuberance form the continuous circular arc shape.At last, in step S17, circular-arc second oxide layer, described second protuberance and the substrate of etching (etching) is to form first protuberance.Wherein, because of the material of first oxide layer and second oxide layer is silicon dioxide (SiO2) or silicon nitride (SiN), substrate is silicon (Si), sapphire substrate (Sapphire), carborundum (SiC), spinelle (MgAl
2O
4), aluminium nitride (AlN) or tungsten copper light-permeables such as (CuW) or light tight and can conduct electricity or non electrically conductive material forms, so learn that the speed of second oxide layer that etching is circular-arc and second protuberance is different with the speed of etching substrates, utilize these different etch-rates to form described first protuberance, these first protuberances are watched from the top and be can be circle, ellipse, triangle, parallelogram, hexagon, rhombus or other polygon etc.The material of second oxide layer and second protuberance can be silicon dioxide or silicon nitride (SiN), and both etch-rates are identical, so also have circular-arc edge via formed first protuberance of etch process.Second circular-arc oxide layer and described second protuberance that the present invention is mentioned can change shape according to the light extraction efficiency of semiconductor element, wherein, the mode of the second circular-arc oxide layer adjustment according to first oxide layer of different-thickness and second oxide layer to produce different circular arc profiles.
Figure 1B is the first embodiment substrate profile of the manufacture method of the semiconductor element with concave-convex base plate of the present invention.As shown in the figure, substrate 10 has a plurality of first protuberances 11, and the section shape of these first protuberances comprises line segment 111 and circular arc line 112.First protuberance 11 to each other apart from the scope of length A at 0.5～5 μ m, the scope of line segment 111 length C is at 0.5～5 μ m, and the projected length B of circular arc line 112 is that first protuberance 11 is to each other apart from 1～2 times of A.In addition, the tangent line of circular arc line 112 and the scope of the angle theta between the horizontal plane are at 25～75 degree, and the string of a musical instrument of circular arc line 112 and the angle theta m between the horizontal plane are less than 45 degree.Can more effectively be reduced on the substrate 10 lattice defect of the semiconductor layer of growing up with first protuberance 11 that above-mentioned specification was produced, external quantum efficiency is improved, to promote the luminous efficiency of semiconductor element.
Fig. 2 A is the second embodiment flow chart of the manufacture method of the semiconductor element with concave-convex base plate of the present invention.Semiconductor element has substrate and a plurality of semiconductor layer, comprises a plurality of first protuberances on the substrate, and shown in Fig. 2 A, this manufacture method comprises: among the step S21, the coating photoresist layer is on substrate; Among the step S22, form a plurality of photoresistance portion to remove photoresist layer partly via the gold-tinted processing procedure; Among the step S23, the deposition of reflective layer is in described photoresistance portion; Among the step S24, float off reflector in (Lift-Off) described photoresistance portion and the described photoresistance portion to form a plurality of reflecting parts; At last, in step S25, via oxidation process with the surface of the described reflecting part of oxidation to form described first protuberance.Described first protuberance is watched from the top and be can be circle, ellipse, triangle, parallelogram, hexagon, rhombus or other polygon etc., the material in reflector can be aluminium (Al), silver (Ag) or speculum, and this speculum comprises Ag, Bragg mirror (DBR) or Al
2O
3Deng, substrate can be silicon (Si), sapphire substrate (Sapphire), carborundum (SiC), spinelle (MgAl
2O
4), aluminium nitride (AlN) or tungsten copper light-permeables such as (CuW) or light tight and can conduct electricity or non electrically conductive material forms.
Fig. 2 B is the second embodiment substrate profile of the manufacture method of the semiconductor element with concave-convex base plate of the present invention.As shown in the figure, form a plurality of first protuberances 21 on the substrate 20, the section shape of these first protuberances 21 comprises line segment 211 and parallax 212.First protuberance 21 to each other apart from the scope of length A at 0.5～5 μ m, the scope of the length C of line segment 211 is at 0.5～5 μ m, the projected length B of parallax 212 is that first protuberance 21 is to each other apart from 1～2 times of A.In addition, the angle theta m scope between parallax 212 and the horizontal plane is less than 45 degree.Can more effectively be reduced on the substrate 20 lattice defect of the semiconductor layer of growing up with first protuberance 21 that above-mentioned specification was produced, external quantum efficiency is improved, to promote the luminous efficiency of semiconductor element.When reflecting part 22 via oxidation process with its surface of oxidation when forming described first protuberance 21, the surface coverage metal oxide 221 of first protuberance 21, this method can effectively be simplified the processing procedure with recessed/protuberance substrate, reaches the effect that reduces cost.
For example, when substrate 20 was sapphire substrate (Sapphire), the material of reflecting part 22 then was an aluminium (Al); Because of the material of sapphire substrate 20 is alchlor (Al
2O
3), so last metal part 22 can produce metal oxide 221 (Al on surface itself through oxidation process
2O
3), and its inside still is Al; The oxide Al on first protuberance, 21 surfaces
2O
3Consistent with the material of sapphire substrate, so can obtain having concaveconvex structure and having Al
2O
3The substrate 20 on surface can form semiconductor layer thus on aforementioned substrate with concaveconvex structure.
Fig. 3 A is the recessed/protuberance pattern vertical view of the manufacture method of the semiconductor element with concave-convex base plate of the present invention, and Fig. 3 B is another recessed/protuberance pattern vertical view of the manufacture method of the semiconductor element with concave-convex base plate of the present invention.As shown in the figure, first protuberance 31 is the pie chart case, first protuberance 31 can regularly arranged (as shown in Figure 3A) or irregular alignment (shown in Fig. 3 B) on substrate.When repeated arrangement first protuberance 31, can improve the probability of x-ray diffraction and scattering, further improve the external quantum efficiency of semiconductor element.In addition, repeated arrangement first protuberance 31 can suppress the lattice defect of localities by this first protuberance 31, obtaining structural good semiconductor layer, and then makes that the substrate with concaveconvex structure is whole to be light-emitting area, improves the luminous efficiency of semiconductor element.The shape that note that first protuberance 31 can be difformities such as circle, ellipse, triangle, parallelogram, hexagon, rhombus or other polygon in response to the light extraction efficiency of semiconductor element, only is for example at present embodiment, but not as limit.
The above only is an illustrative, but not is restricted.Anyly do not break away from spirit of the present invention and category, and, all should be contained in the scope of claim of the present invention its equivalent modifications of carrying out or change.
Claims (21)
1. manufacture method with semiconductor element of concave-convex base plate, described semiconductor element has substrate and a plurality of semiconductor layer, comprises a plurality of first protuberances on the described substrate, and described manufacture method comprises:
Form first oxide layer on described substrate;
The coating photoresist layer is on described first oxide layer;
The described photoresist layer of exposure imaging is to form a plurality of photoresistance portion;
Described first oxide layer that etching is not covered by described photoresistance portion is to form a plurality of second protuberances;
Remove described photoresist layer and deposit second oxide layer on described second protuberance and described substrate;
Described second oxide layer of etching and that described second oxide layer is formed is circular-arc in the described second protuberance edge;
The described second circular-arc oxide layer of etching, described second protuberance and described substrate are to form first protuberance.
2. the manufacture method with semiconductor element of concave-convex base plate according to claim 1 is characterized in that: described first protuberance is watched from the top and is circle, ellipse, triangle, parallelogram, hexagon, rhombus or other polygon.
3. the manufacture method with semiconductor element of concave-convex base plate according to claim 1 is characterized in that: described second protuberance and the described second circular-arc oxide layer can change shape according to the light extraction efficiency of described semiconductor element.
4. the manufacture method with semiconductor element of concave-convex base plate according to claim 1 is characterized in that: described first protuberance scope of distance to each other is 0.5～5 μ m.
5. the manufacture method with semiconductor element of concave-convex base plate according to claim 1 is characterized in that: the section shape of described first protuberance comprises line segment and circular arc line.
6. the manufacture method with semiconductor element of concave-convex base plate according to claim 5 is characterized in that: the scope of described line segment length is 0.5～5 μ m.
7. the manufacture method with semiconductor element of concave-convex base plate according to claim 5 is characterized in that: the projected length of described circular arc line is described first protuberance 1～2 times of distance to each other.
8. the manufacture method with semiconductor element of concave-convex base plate according to claim 5 is characterized in that: the tangent line of described circular arc line and the angle theta scope between the horizontal plane are 25～75 degree.
9. the manufacture method with semiconductor element of concave-convex base plate according to claim 5 is characterized in that: the string of a musical instrument of described circular arc line and the angle theta m between the horizontal plane are less than 45 degree.
10. the manufacture method with semiconductor element of concave-convex base plate according to claim 1 is characterized in that: described substrate is a light-permeable or light tight and can conduct electricity or non electrically conductive material forms.
11. the manufacture method with semiconductor element of concave-convex base plate according to claim 10 is characterized in that: the material of described substrate is silicon, sapphire substrate, carborundum, spinelle, aluminium nitride or tungsten copper.
12. the manufacture method with semiconductor element of concave-convex base plate, described semiconductor element have substrate and a plurality of semiconductor layer, comprise a plurality of first protuberances on the described substrate, described manufacture method comprises:
The coating photoresist layer is on described substrate;
Form a plurality of photoresistance portion via the gold-tinted processing procedure to remove described photoresist layer partly;
The deposition of reflective layer is in described photoresistance portion;
Float off described reflector in described photoresistance portion and the described photoresistance portion to form a plurality of metal part; And
Via oxidation process with the described reflector of oxidation to form described first protuberance.
13. the manufacture method with semiconductor element of concave-convex base plate according to claim 12 is characterized in that: described first protuberance is watched from the top and is circle, ellipse, triangle, parallelogram, hexagon, rhombus or other polygon.
14. the manufacture method with semiconductor element of concave-convex base plate according to claim 12 is characterized in that: the material in described reflector is aluminium, silver or speculum, and described speculum comprises silver, Bragg mirror or alundum (Al.
15. the manufacture method with semiconductor element of concave-convex base plate according to claim 12 is characterized in that: described first protuberance scope of distance to each other is 0.5～5 μ m.
16. the manufacture method with semiconductor element of concave-convex base plate according to claim 12 is characterized in that: the section shape of described first protuberance comprises line segment and parallax.
17. the manufacture method with semiconductor element of concave-convex base plate according to claim 16 is characterized in that: the scope of described line segment length is 0.5～5 μ m.
18. the manufacture method with semiconductor element of concave-convex base plate according to claim 16 is characterized in that: the projected length of described parallax is described first protuberance 1～2 times of distance to each other.
19. the manufacture method with semiconductor element of concave-convex base plate according to claim 16 is characterized in that: the angle theta m between described parallax and the horizontal plane is less than 45 degree.
20. the manufacture method with semiconductor element of concave-convex base plate according to claim 12 is characterized in that: described substrate is a light-permeable or light tight and can conduct electricity or non electrically conductive material forms.
21. the manufacture method with semiconductor element of concave-convex base plate according to claim 20 is characterized in that: the material of described substrate is silicon, sapphire substrate, carborundum, spinelle, aluminium nitride or tungsten copper.
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0405757A2 (en) * | 1989-06-27 | 1991-01-02 | Hewlett-Packard Company | High efficiency light-emitting diode |
| US5081049A (en) * | 1988-07-18 | 1992-01-14 | Unisearch Limited | Sculpted solar cell surfaces |
| WO2001073859A1 (en) * | 2000-03-24 | 2001-10-04 | Nova Crystals, Inc. | Enhanced-output light emitting diode and method of making the same |
| CN1700832A (en) * | 2004-05-19 | 2005-11-23 | 洲磊科技股份有限公司 | Light-emitting component structure capable of improving light-emitting effect |
| WO2006016955A1 (en) * | 2004-07-02 | 2006-02-16 | Cree, Inc. | Led with substrate modifications for enhanced light extraction and method of making same |
| CN101140968A (en) * | 2006-09-08 | 2008-03-12 | 晶元光电股份有限公司 | Light element device and method for manufacturing same having patterned substrate |
| CN101325237A (en) * | 2008-07-30 | 2008-12-17 | 鹤山丽得电子实业有限公司 | LED chip and manufacturing method thereof |
-
2009
- 2009-02-11 CN CN200910007311XA patent/CN101800274B/en not_active Expired - Fee Related
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5081049A (en) * | 1988-07-18 | 1992-01-14 | Unisearch Limited | Sculpted solar cell surfaces |
| EP0405757A2 (en) * | 1989-06-27 | 1991-01-02 | Hewlett-Packard Company | High efficiency light-emitting diode |
| WO2001073859A1 (en) * | 2000-03-24 | 2001-10-04 | Nova Crystals, Inc. | Enhanced-output light emitting diode and method of making the same |
| CN1700832A (en) * | 2004-05-19 | 2005-11-23 | 洲磊科技股份有限公司 | Light-emitting component structure capable of improving light-emitting effect |
| WO2006016955A1 (en) * | 2004-07-02 | 2006-02-16 | Cree, Inc. | Led with substrate modifications for enhanced light extraction and method of making same |
| CN101140968A (en) * | 2006-09-08 | 2008-03-12 | 晶元光电股份有限公司 | Light element device and method for manufacturing same having patterned substrate |
| CN101325237A (en) * | 2008-07-30 | 2008-12-17 | 鹤山丽得电子实业有限公司 | LED chip and manufacturing method thereof |
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