CN101799639A - Low temperature type aqueous stripper for positive photoresist - Google Patents
Low temperature type aqueous stripper for positive photoresist Download PDFInfo
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- CN101799639A CN101799639A CN 201010139071 CN201010139071A CN101799639A CN 101799639 A CN101799639 A CN 101799639A CN 201010139071 CN201010139071 CN 201010139071 CN 201010139071 A CN201010139071 A CN 201010139071A CN 101799639 A CN101799639 A CN 101799639A
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- low temperature
- type aqueous
- temperature type
- stripper
- positive photoresist
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Abstract
The invention relates to a low temperature type aqueous stripper for positive photoresist, which is characterized by comprising the following components in percentage by mass: 29-31% of N-methyl pyrrolidone, 23.7-27.7% of dimethyl acetylamide, 24-26% of diethylene glycol monobutyl ether and 17-23% of water. The low temperature type aqueous stripper for positive photoresist has the advantages of no attack on the metal layer during photoresist stripping, low temperature of use process, less pollution to the environment and less harm to the human health.
Description
One, technical field
The present invention relates to a kind of low temperature type aqueous positive glue stripper, relate in particular to the low temperature type aqueous positive glue stripper that the photoresistance of a kind of FPD of being used for panel production is peeled off.
Two, background technology
Low temperature type aqueous positive glue stripper, transparent effumability liquid, inflammable, density (20 ℃) is about 1.0g/ml.Low temperature type aqueous positive glue stripper is mainly used in the photoresistance that is used for the production of FPD panel and peels off, and it uses technological temperature is about 80 ℃; At present positive glue stripper mainly is made up of monoethanolamine (MEA), dimethyl sulfoxide (DMSO) (DMSO) and ultrapure water, and mainly there is following some shortcoming in this product:
1. carry out easily the metal level generation of photoresistance protection being attacked when photoresistance is peeled off with this low temperature type aqueous positive glue stripper, cause the product yield to reduce;
2. the use technological temperature of this low temperature type aqueous positive glue stripper is had relatively high expectations, and need be heated to about 80 ℃, and energy consumption is bigger;
3. monoethanolamine (MEA) and dimethyl sulfoxide (DMSO) (DMSO) are big for environment pollution and health had than major injury.
④
Three, technology contents
At above-mentioned shortcoming, the object of the present invention is to provide and a kind ofly carry out not attacking when photoresistance is peeled off metal level, use that technological temperature is low, environmentally safe is little and the little low temperature type aqueous stripper of health injury.
Technology contents of the present invention is that a kind of low temperature type aqueous positive glue stripper is characterized in that it comprises the component of following mass percent:
N-Methyl pyrrolidone (NMP) 29～31
Dimethyl acetamide (DMAC) 23.7～27.7
Diethylene glycol butyl ether (BDG) 24～26
Water 17～23.
The preparation method of low temperature type aqueous positive glue stripper of the present invention, for routine techniques is:
(1), raw material NMP, DMAC, BDG are squeezed in the blend tank successively, after needed weight reaches, stop material loading automatically, start membrane pump again, through 0.5um filtrator circulating filtration 2 hours by automatical feeding system;
(2), the above-mentioned mixed liquor that makes is filtered through the filtrator of 0.2 μ m, particle diameter promptly gets low temperature type aqueous positive glue stripper greater than harmful particle of 0.2 μ m in the mixed liquor to remove.
The present invention is under the prerequisite that does not change client's result of use, change prescription, improve the photoresistance stripping performance of product, reduce the process conditions temperature, and the infringement that human body and environment are caused that the positive glue stripper of having avoided original use causes, this method can be applicable to large-scale production.
The advantage that the present invention is compared with prior art had is:
1, low temperature type aqueous positive glue stripper of the present invention carries out photoresistance and peels off Shi Buhui and attack metal level.
2, low temperature type aqueous positive glue stripper technological temperature condition of the present invention is 60 ℃, is lower than 80 ℃ of original technological temperatures, and energy consumption reduces.
3, the component in the low temperature type aqueous positive glue stripper of the present invention is little to human health damage and environmental pollution.
Four, specific embodiment
The invention is further illustrated by the following examples, but be not limited to for embodiment.
The N-Methyl pyrrolidone of content 99% (NMP), electron level, the Jiangyin Jianghua Microelectronic Materials Co., Ltd produces; Its index such as table 1
| Classification | Electron level is in % |
| Content | ????????????≥99.85 |
| Colourity, Hazen | ????????????≤10 |
| Moisture | ????????????≤0.03 |
| Sulfate (SO4) | ????????????≤5×10 -5 |
| Chloride (Cl) | ????????????≤5×10 -5 |
| Phosphate (PO4) | ????????????≤5×10 -5 |
| Aluminium (Al) | ????????????≤5×10 -7 |
| Arsenic (As) | ????????????≤3×10 -7 |
| Barium (Ba) | ????????????≤3×10 -7 |
| Boron (B) | ????????????≤3×10 -7 |
| Cadmium (Cd) | ????????????≤3×10 -7 |
| Calcium (Ca) | ????????????≤1×10 -6 |
| Chromium (Cr) | ????????????≤3×10 -7 |
| Cobalt (Co) | ????????????≤3×10 -7 |
| Copper (Cu) | ????????????≤3×10 -7 |
| Gallium (Ga) | ????????????≤3×10 -7 |
| Classification | Electron level is in % |
| Gold (Au) | ????????????≤5×10 -7 |
| Iron (Fe) | ????????????≤5×10 -7 |
| Plumbous (Pb) | ????????????≤3×10 -7 |
| Lithium (Li) | ????????????≤3×10 -7 |
| Magnesium (Mg) | ????????????≤3×10 -7 |
| Manganese (Mn) | ????????????≤3×10 -7 |
| Nickel (Ni) | ????????????≤1×10 -6 |
| Potassium (K) | ????????????≤5×10 -7 |
| Silver (Ag) | ????????????≤3×10 -7 |
| Sodium (Na) | ????????????≤5×10 -7 |
| Tin (Sn) | ????????????≤3×10 -7 |
| Zinc (Zn) | ????????????≤1×10 -6 |
| Titanium (Ti) | ????????????≤3×10 -7 |
Table 1
Content is 99% dimethyl acetamide (DMAC), electron level, and Korea S Samsung produces; Its index such as table 2
| Classification | Electron level is in % |
| Content | ??????????≥99.9 |
| Moisture | ??????????≤0.01 |
| Colourity, Hazen | ??????????≤5 |
| Acidity (in HAC) | ??????????≤0.008 |
| Basicity (in DMA) | ??????????≤0.0005 |
| Classification | Electron level is in % |
| Conductivity (20 ℃) μ s/cm | ??????????≤0.5 |
| Iron (Fe) | ??????????≤5×10 -6 |
Table 2
Content is 99% diethylene glycol butyl ether (BDG), electron level, German BASF production; Its index such as table 3
| Classification | Electron level is in % |
| Content | ??????????≥99.9 |
| Moisture | ??????????≤0.01 |
| Colourity, Hazen | ??????????≤5 |
Table 3
Example 1, take by weighing NMP30kg, under agitation add and be equipped with in the reactor of 10kg water, stirred 15 minutes, add DMAC26kg, BDG24.2kg adds water to 100kg, stir after 20 minutes, the potpourri that makes is filtered through the filtrator of 0.2 μ m, and particle diameter promptly gets low temperature type aqueous positive glue stripper greater than harmful particle of 0.2 μ m in the potpourri to remove.
Example 2, take by weighing NMP30kg, under agitation add and be equipped with in the reactor of 10kg water, stirred 15 minutes, add DMAC26kg, BDG24.5kg adds water to 100kg, stir after 20 minutes, the potpourri that makes is filtered through the filtrator of 0.2 μ m, and particle diameter promptly gets low temperature type aqueous positive glue stripper greater than harmful particle of 0.2 μ m in the potpourri to remove.
Example 3, take by weighing NMP30kg, under agitation add and be equipped with in the reactor of 10kg water, stirred 15 minutes, add DMAC26kg, BDG25kg adds water to 100kg, stir after 20 minutes, the potpourri that makes is filtered through the filtrator of 0.2 μ m, and particle diameter promptly gets low temperature type aqueous positive glue stripper greater than harmful particle of 0.2 μ m in the potpourri to remove.
Example 4, take by weighing NMP30kg, under agitation add and be equipped with in the reactor of 10kg water, stirred 15 minutes, add DMAC26kg, BDG25.5kg adds water to 100kg, stir after 20 minutes, the potpourri that makes is filtered through the filtrator of 0.2 μ m, and particle diameter promptly gets low temperature type aqueous positive glue stripper greater than harmful particle of 0.2 μ m in the potpourri to remove.
Example 5, take by weighing NMP30kg, under agitation add and be equipped with in the reactor of 10kg water, stirred 15 minutes, add DMAC26kg, BDG26kg adds water to 100kg, stir after 20 minutes, the potpourri that makes is filtered through the filtrator of 0.2 μ m, and particle diameter promptly gets low temperature type aqueous positive glue stripper greater than harmful particle of 0.2 μ m in the potpourri to remove.
Claims (1)
1. low temperature type aqueous positive glue stripper is characterized in that it comprises the component of following mass percent:
N-Methyl pyrrolidone (NMP) 29～31
Dimethyl acetamide (DMAC) 23.7～27.7
Diethylene glycol butyl ether (BDG) 24～26
Water 17～23.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010139071 CN101799639A (en) | 2010-04-01 | 2010-04-01 | Low temperature type aqueous stripper for positive photoresist |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010139071 CN101799639A (en) | 2010-04-01 | 2010-04-01 | Low temperature type aqueous stripper for positive photoresist |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101799639A true CN101799639A (en) | 2010-08-11 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 201010139071 Pending CN101799639A (en) | 2010-04-01 | 2010-04-01 | Low temperature type aqueous stripper for positive photoresist |
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| CN (1) | CN101799639A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102566333A (en) * | 2011-12-30 | 2012-07-11 | 江阴江化微电子材料股份有限公司 | Low-temperature aqueous positive-photoresist stripping solution and preparation method thereof |
| CN104932211A (en) * | 2015-06-02 | 2015-09-23 | 江阴江化微电子材料股份有限公司 | Aluminum film water system photoresistance stripping liquid in liquid crystal panel manufacture technology and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030064326A1 (en) * | 2001-09-28 | 2003-04-03 | Fujitsu Limited | Resist stripper, resist stripping method, and thin film circuit device formation method |
| CN1439932A (en) * | 2002-02-19 | 2003-09-03 | 株式会社德成 | Composition for stripping photoresist |
| CN1924710A (en) * | 2005-09-02 | 2007-03-07 | 东进世美肯株式会社 | Optical resist clearing agent composition for wiping improved optical resist of semiconductor device |
| CN101398639A (en) * | 2007-09-28 | 2009-04-01 | 三星电子株式会社 | Composition for stripping and stripping method |
| US20100159400A1 (en) * | 2008-12-24 | 2010-06-24 | Samsung Electronics Co., Ltd. | Composition for removing a photoresist pattern and method of forming a metal pattern using the composition |
-
2010
- 2010-04-01 CN CN 201010139071 patent/CN101799639A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030064326A1 (en) * | 2001-09-28 | 2003-04-03 | Fujitsu Limited | Resist stripper, resist stripping method, and thin film circuit device formation method |
| CN1439932A (en) * | 2002-02-19 | 2003-09-03 | 株式会社德成 | Composition for stripping photoresist |
| CN1924710A (en) * | 2005-09-02 | 2007-03-07 | 东进世美肯株式会社 | Optical resist clearing agent composition for wiping improved optical resist of semiconductor device |
| CN101398639A (en) * | 2007-09-28 | 2009-04-01 | 三星电子株式会社 | Composition for stripping and stripping method |
| US20100159400A1 (en) * | 2008-12-24 | 2010-06-24 | Samsung Electronics Co., Ltd. | Composition for removing a photoresist pattern and method of forming a metal pattern using the composition |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102566333A (en) * | 2011-12-30 | 2012-07-11 | 江阴江化微电子材料股份有限公司 | Low-temperature aqueous positive-photoresist stripping solution and preparation method thereof |
| CN104932211A (en) * | 2015-06-02 | 2015-09-23 | 江阴江化微电子材料股份有限公司 | Aluminum film water system photoresistance stripping liquid in liquid crystal panel manufacture technology and preparation method thereof |
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| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
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| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
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Open date: 20100811 |