CN101791828A - Deflection angle multi-line cutting method and cutting device thereof - Google Patents
Deflection angle multi-line cutting method and cutting device thereof Download PDFInfo
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- CN101791828A CN101791828A CN201010114101A CN201010114101A CN101791828A CN 101791828 A CN101791828 A CN 101791828A CN 201010114101 A CN201010114101 A CN 201010114101A CN 201010114101 A CN201010114101 A CN 201010114101A CN 101791828 A CN101791828 A CN 101791828A
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Abstract
The invention relates to a deflection angle multi-line cutting method and a cutting device thereof. In a method for cutting silicon ingots into a plurality of chips in the traditional process, the first silicon ingot and the second silicon ingot are totally parallel to the horizontal plane during fixing, and the cut lines are parallel to the bottoms of the silicon ingots, so no deflection angle is formed. The deflection angle multi-line cutting method of the invention cuts the two silicon ingots subjected to chamfering treatment in a multi-line mode at the same time. By adopting the method of the invention, the reduction of cutting time by 10 to 20 minutes from the traditional 430 minutes has great significance, for a certain working time needs to be consumed during detaching the cut silicon chips and replacing new cut lines; if the detachment and replacement consume over-long time and the time is converted into the cutting time of about 7 hours, the total working period exceeds 8 hours, and the working mode of three shifts made every 8 hours each day can be converted into a mode of two shifts in the effective working period; thus, enough time is left for preparing a next cutting operation.
Description
Technical field
The present invention relates to a kind of multi-thread saw cutting process and cutter sweep thereof, especially deflection angle multi-line saw cutting process and cutter sweep thereof.
Background technology
The method that in the traditional handicraft silicon ingot cut into the multi-disc silicon chip is a drift angle degree not, and is specific as follows:
In the traditional handicraft silicon ingot is cut into the method for multi-disc silicon chip, simultaneously multi-thread cutting is through two silicon ingots of chamfered, first silicon ingot and second silicon ingot all are fixed on the dovetail seat 3, the central shaft E1 of first silicon ingot and the central shaft E2 of second silicon ingot are parallel distribution, drift angle A1 in the cross-sectional distribution along the vertical ground direction of first silicon ingot has on first, outer drift angle B1 on first, first time outer drift angle C1, drift angle D1 in first time; Drift angle A2 in the cross-sectional distribution along vertical ground face direction of second silicon ingot has on second, outer drift angle B2 on second, second time outer drift angle C2, drift angle D2 in second time; It is characterized in that: first time outer drift angle C1 perpendicular to horizontal distance with first time in drift angle D1 identical perpendicular to horizontal distance; Second time outer drift angle C2 perpendicular to horizontal distance with second time in drift angle D2 identical perpendicular to horizontal distance.
In the traditional handicraft silicon ingot is cut into the method for multi-disc silicon chip, first silicon ingot is fully parallel with horizontal plane in fixing with second silicon ingot, and line of cut is parallel with the bottom of silicon ingot, does not have the drift angle degree.Such operation is to meet the orthodox operation that cutting equipment manufacturer provides, thereby seldom has the technical staff the method can be changed.
In the cutting of traditional not drift angle degree, each two heavy 10 kilograms silicon ingot of multi-thread cutting are to all being that silicon chip finishes, and whole cutting process generally needs 428-432 minute.
Summary of the invention
The object of the present invention is to provide deflection angle multi-line saw cutting process and cutter sweep thereof, can suitably shorten the work period of cutting, help increasing work efficiency.
Technical scheme of the present invention is:
Deflection angle multi-line cutting method, simultaneously multi-thread cutting is through two silicon ingots of chamfered, first silicon ingot and second silicon ingot all are fixed on the dovetail seat 3, the central shaft E1 of first silicon ingot and the central shaft E2 of second silicon ingot are parallel distribution, drift angle A1 in the cross-sectional distribution along the vertical ground direction of first silicon ingot has on first, outer drift angle B1 on first, first time outer drift angle C1, drift angle D1 in first time; Drift angle A2 in the cross-sectional distribution along vertical ground face direction of second silicon ingot has on second, outer drift angle B2 on second, second time outer drift angle C2, drift angle D2 in second time; First time outer drift angle C1 is higher than in first time drift angle D1 perpendicular to horizontal distance perpendicular to horizontal distance; Second time outer drift angle C2 is higher than in second time drift angle D2 perpendicular to horizontal distance perpendicular to horizontal distance.
Deflection angle multi-line cutting method, simultaneously multi-thread cutting is through two silicon ingots of chamfered, first silicon ingot and second silicon ingot all are fixed on the dovetail seat 3, the central shaft E1 of first silicon ingot and the central shaft E2 of second silicon ingot are parallel distribution, drift angle A1 in the cross-sectional distribution along the vertical ground direction of first silicon ingot has on first, outer drift angle B1 on first, first time outer drift angle C1, drift angle D1 in first time; Drift angle A2 in the cross-sectional distribution along vertical ground face direction of second silicon ingot has on second, outer drift angle B2 on second, second time outer drift angle C2, drift angle D2 in second time; First time outer drift angle C1 perpendicular to horizontal distance be higher than in first time drift angle D1 perpendicular to horizontal apart from the 1.4-1.6 millimeter; Second time outer drift angle C2 perpendicular to horizontal distance be higher than in second time drift angle D2 perpendicular to horizontal apart from the 1.4-1.6 millimeter.
Deflection angle multi-line cutting method, silicon ingot weight are the 9.8-10.2 kilogram.
Deflection angle multi-line cutting method, be 408-422 minute multi-thread clipping time.
The deflection angle multi-line cutter sweep comprises through two silicon ingots of chamfered, two blocks of supporting plates 2, two dovetail seats 3, two glass plates 4, mortar pipe 5, line of cut 6 and guide rollers 1; Dovetail seat 3 links to each other with supporting plate 2, supporting plate 2 and 4 bonding linking to each other of glass plate, and glass plate 4 links to each other with silicon ingot, and line of cut 6 is uniformly on guide roller 1; Many mortar pipes 5 are distributed in the whole cutter sweep; The central shaft E1 of first silicon ingot and the central shaft E2 of second silicon ingot are parallel distribution, drift angle A1 in the cross-sectional distribution along the vertical ground direction of first silicon ingot has on first, outer drift angle B1 on first, first time outer drift angle C1, drift angle D1 in first time; Drift angle A2 in the cross-sectional distribution along vertical ground face direction of second silicon ingot has on second, outer drift angle B2 on second, second time outer drift angle C2, drift angle D2 in second time; First time outer drift angle C1 perpendicular to horizontal distance be higher than in first time drift angle D1 perpendicular to horizontal apart from the 1.4-1.6 millimeter; Second time outer drift angle C2 perpendicular to horizontal distance be higher than in second time drift angle D2 perpendicular to horizontal apart from the 1.4-1.6 millimeter.
In the traditional handicraft silicon ingot is cut into the method for multi-disc silicon chip, first silicon ingot is fully parallel with horizontal plane in fixing with second silicon ingot, and line of cut is parallel with the bottom of silicon ingot, does not have the drift angle degree.Such operation is to meet the orthodox operation that cutting equipment manufacturer provides, thereby seldom has the technical staff the method can be changed.
In the cutting of traditional not drift angle degree, each two heavy 10 kilograms silicon ingot of multi-thread cutting are to all being that silicon chip finishes, and whole cutting process generally needs 428-432 minute.
But those skilled in the art cut each two heavy 10 kilograms silicon ingot again to all being that silicon chip finishes after a maintenance of equipment, finding only needs 412 minutes, obviously is different from the tradition cutting so Duan clipping time.Through checking reason, belonging to those skilled in the art's careless mistake in the process of a maintenance of equipment will be fixed on first silicon ingot on the dovetail seat 3 and second silicon ingot certain deviation occurred when installing after, after whole cutting finishes, find not only can not reduce the yield rate of cutting, can suitably shorten clipping time on the contrary.So just caused the present invention.
The present invention shows and cuts the two piece silicon ingots of weight for each heavy 9.8-10.2 kilogram simultaneously through test of many times, the cutting yield rate, and line cutting consumption, clipping time, contrast was as follows:
| The cutting yield rate | Line cutting consumption | Clipping time | |
| Drift angle degree not | Identical (in the error range) | Identical (in the error range) | 430 minutes |
| C1 is higher than 1.4 millimeters C2 of D1 and is higher than 1.4 millimeters of D2 | Identical (in the error range) | Identical (in the error range) | 422 minutes |
| C1 is higher than 1.5 millimeters C2 of D1 and is higher than 1.5 millimeters of D2 | Identical (in the error range) | Identical (in the error range) | 418 minutes |
| The cutting yield rate | Line cutting consumption | Clipping time | |
| C1 is higher than 1.6 millimeters C2 of D1 and is higher than 1.6 millimeters of D2 | Identical (in the error range) | Identical (in the error range) | 408 minutes |
The explanation of technical term and operation principle and advantage of the present invention are as follows:
Silicon ingot (processed product), glass plate 4, supporting plate 2 are bonded together, be assembled together securely with dovetail seat 3 again, and then be assemblied in whole deflection angle multi-line saw cutting device on the cutting machine by dovetail seat 3 and fixedly secure.
During cutting, after guide roller 1 rotation is arranged line of cut 6 evenly, start mortar pipe 5 and make it evenly to flow out mortar.After confirming mortar and line of cut running OK, whole board can carry out operation by normal cutting process.
In Fig. 1, on first in drift angle A1 near drift angle A2 on second, outer drift angle B1 is away from outer drift angle B2 on second on first, first time outer drift angle C1 be away from second time outer drift angle C2, drift angle D2 in close second time of the drift angle D1 in first time.
It is as follows that we analyze the reason that shortens clipping time:
In the slicing processes of existing silicon ingot, utilize steel wire to drive mortar and carry out cutting operation.Because the lack of uniformity of line of cut tension force, line secant movement locus is arc, and non-rectilinear; So in fact the distance of whole cutting has arcly, and whole movement locus is long partially.Thereby it is long partially needed clipping time to reach same cutting yield rate effect.
And use the cutting mode of drift angle of the present invention degree instead, adjust the angle of silicon ingot by the deflection angle multi-line cutter sweep at cutting position, make the silicon chip quality be subjected to line of cut tension force to influence minimum at cutting process, make that on the contrary line cutting movement track is a straight line, so the distance of whole cutting is short partially.Thereby it is on the low side needed clipping time to reach same cutting yield rate effect.
As silicon ingot line cutting field, reach the clipping time more than 400 minutes, be about 7 hours after being converted to hour.And traditional manufacturing industry was a staff's work period with 8 hours generally, and the enterprise of high loaded process normally adopts 24 hours every days by 8 hours working method of class Three.
Adopt the inventive method so, shortened 10-20 minute by traditional 430 minutes clipping time is very significant, because cut the silicon chip that finishes in dismounting, the line of cut that more renews all needs to consume certain working time, if the dismounting and change elapsed time is long, cause the cycle of work always to surpass 8 hours work related clipping time of being converted to about 7 hours, and will shorten to active duty cycle by 8 hours working method of class Three 24 hours every days so is two classes.
Adopt the inventive method, can have enough plenty of time to go to prepare next cutting work.
Description of drawings
Fig. 1 is a structural representation of the present invention.
Reference numeral: outer drift angle B1 on the drift angle A1, first on the guide roller 1, supporting plate 2, dovetail seat 3, glass plate 4, mortar pipe 5, line of cut 6, first, first time outer drift angle C1, outer drift angle B2 on the interior drift angle A2, second on the drift angle D1, second in first time, second time outer drift angle C2, drift angle D2, the central shaft E1 of first silicon ingot, the central shaft E2 of second silicon ingot in second time.
The specific embodiment
Embodiment 7, deflection angle multi-line cutting method, silicon ingot weight are 10.0 kilograms.All the other are with embodiment 4.
Embodiment 8, deflection angle multi-line cutter sweep comprise through two silicon ingots of chamfered, two blocks of supporting plates 2, two dovetail seats 3, two glass plates 4, mortar pipe 5, line of cut 6 and guide rollers 1; Dovetail seat 3 links to each other with supporting plate 2, supporting plate 2 and 4 bonding linking to each other of glass plate, and glass plate 4 links to each other with silicon ingot, and line of cut 6 is uniformly on guide roller 1; Many mortar pipes 5 are distributed in the whole cutter sweep; The central shaft E1 of first silicon ingot and the central shaft E2 of second silicon ingot are parallel distribution, drift angle A1 in the cross-sectional distribution along the vertical ground direction of first silicon ingot has on first, outer drift angle B1 on first, first time outer drift angle C1, drift angle D1 in first time; Drift angle A2 in the cross-sectional distribution along vertical ground face direction of second silicon ingot has on second, outer drift angle B2 on second, second time outer drift angle C2, drift angle D2 in second time; It is characterized in that: first time outer drift angle C1 perpendicular to horizontal distance be higher than in first time drift angle D1 perpendicular to horizontal apart from the 1.4-1.6 millimeter; Second time outer drift angle C2 perpendicular to horizontal distance be higher than in second time drift angle D2 perpendicular to horizontal apart from the 1.4-1.6 millimeter.
Embodiment 9, deflection angle multi-line cutter sweep comprise through two silicon ingots of chamfered, two blocks of supporting plates 2, two dovetail seats 3, two glass plates 4, mortar pipe 5, line of cut 6 and guide rollers 1; Dovetail seat 3 links to each other with supporting plate 2, supporting plate 2 and 4 bonding linking to each other of glass plate, and glass plate 4 links to each other with silicon ingot, and line of cut 6 is uniformly on guide roller 1; Many mortar pipes 5 are distributed in the whole cutter sweep; The central shaft E1 of first silicon ingot and the central shaft E2 of second silicon ingot are parallel distribution, drift angle A1 in the cross-sectional distribution along the vertical ground direction of first silicon ingot has on first, outer drift angle B1 on first, first time outer drift angle C1, drift angle D1 in first time; Drift angle A2 in the cross-sectional distribution along vertical ground face direction of second silicon ingot has on second, outer drift angle B2 on second, second time outer drift angle C2, drift angle D2 in second time; It is characterized in that: first time outer drift angle C1 perpendicular to horizontal distance be higher than in first time drift angle D1 perpendicular to horizontal apart from the 1.4-1.6 millimeter; Second time outer drift angle C2 is higher than in second time drift angle D2 perpendicular to 1.4 millimeters of horizontal distances perpendicular to horizontal distance.
Embodiment 8, deflection angle multi-line cutter sweep comprise through two silicon ingots of chamfered, two blocks of supporting plates 2, two dovetail seats 3, two glass plates 4, mortar pipe 5, line of cut 6 and guide rollers 1; Dovetail seat 3 links to each other with supporting plate 2, supporting plate 2 and 4 bonding linking to each other of glass plate, and glass plate 4 links to each other with silicon ingot, and line of cut 6 is uniformly on guide roller 1; Many mortar pipes 5 are distributed in the whole cutter sweep; The central shaft E1 of first silicon ingot and the central shaft E2 of second silicon ingot are parallel distribution, drift angle A1 in the cross-sectional distribution along the vertical ground direction of first silicon ingot has on first, outer drift angle B1 on first, first time outer drift angle C1, drift angle D1 in first time; Drift angle A2 in the cross-sectional distribution along vertical ground face direction of second silicon ingot has on second, outer drift angle B2 on second, second time outer drift angle C2, drift angle D2 in second time; It is characterized in that: first time outer drift angle C1 perpendicular to horizontal distance be higher than in first time drift angle D1 perpendicular to horizontal apart from the 1.4-1.6 millimeter; Second time outer drift angle C2 is higher than in second time drift angle D2 perpendicular to 1.5 millimeters of horizontal distances perpendicular to horizontal distance.
Embodiment 8, deflection angle multi-line cutter sweep comprise through two silicon ingots of chamfered, two blocks of supporting plates 2, two dovetail seats 3, two glass plates 4, mortar pipe 5, line of cut 6 and guide rollers 1; Dovetail seat 3 links to each other with supporting plate 2, supporting plate 2 and 4 bonding linking to each other of glass plate, and glass plate 4 links to each other with silicon ingot, and line of cut 6 is uniformly on guide roller 1; Many mortar pipes 5 are distributed in the whole cutter sweep; The central shaft E1 of first silicon ingot and the central shaft E2 of second silicon ingot are parallel distribution, drift angle A1 in the cross-sectional distribution along the vertical ground direction of first silicon ingot has on first, outer drift angle B1 on first, first time outer drift angle C1, drift angle D1 in first time; Drift angle A2 in the cross-sectional distribution along vertical ground face direction of second silicon ingot has on second, outer drift angle B2 on second, second time outer drift angle C2, drift angle D2 in second time; It is characterized in that: first time outer drift angle C1 perpendicular to horizontal distance be higher than in first time drift angle D1 perpendicular to horizontal apart from the 1.4-1.6 millimeter; Second time outer drift angle C2 is higher than in second time drift angle D2 perpendicular to 1.6 millimeters of horizontal distances perpendicular to horizontal distance.
Claims (5)
1. deflection angle multi-line cutting method, simultaneously multi-thread cutting is through two silicon ingots of chamfered, first silicon ingot and second silicon ingot all are fixed on the dovetail seat (3), the central shaft of first silicon ingot (E1) and the central shaft (E2) of second silicon ingot are parallel distribution, drift angle (A1) in the cross-sectional distribution along the vertical ground direction of first silicon ingot has on first, outer drift angle (B1) on first, first time outer drift angle (C1), drift angle (D1) in first time; Drift angle (A2) in the cross-sectional distribution along vertical ground face direction of second silicon ingot has on second, outer drift angle (B2) on second, second time outer drift angle (C2), drift angle (D2) in second time; It is characterized in that: first time outer drift angle (C1) is higher than drift angle in first time (D1) perpendicular to horizontal distance perpendicular to horizontal distance; Second time outer drift angle (C2) is higher than drift angle in second time (D2) perpendicular to horizontal distance perpendicular to horizontal distance.
2. deflection angle multi-line cutting method, simultaneously multi-thread cutting is through two silicon ingots of chamfered, first silicon ingot and second silicon ingot all are fixed on the dovetail seat (3), the central shaft of first silicon ingot (E1) and the central shaft (E2) of second silicon ingot are parallel distribution, drift angle (A1) in the cross-sectional distribution along the vertical ground direction of first silicon ingot has on first, outer drift angle (B1) on first, first time outer drift angle (C1), drift angle (D1) in first time; Drift angle (A2) in the cross-sectional distribution along vertical ground face direction of second silicon ingot has on second, outer drift angle (B2) on second, second time outer drift angle (C2), drift angle (D2) in second time; It is characterized in that: first time outer drift angle (C1) perpendicular to horizontal distance be higher than drift angle in first time (D1) perpendicular to horizontal apart from the 1.4-1.6 millimeter; Second time outer drift angle (C2) perpendicular to horizontal distance be higher than drift angle in second time (D2) perpendicular to horizontal apart from the 1.4-1.6 millimeter.
3. deflection angle multi-line cutting method as claimed in claim 2 is characterized in that: silicon ingot weight is the 9.8-10.2 kilogram.
4. as claim 2 or 3 described deflection angle multi-line cutting methods, it is characterized in that: be 408-422 minute multi-thread clipping time.
5. the deflection angle multi-line cutter sweep comprises two silicon ingots, two blocks of supporting plates (2), two dovetail seats (3), two glass plates (4), mortar pipe (5), line of cut (6) and guide roller (1) through chamfered; Dovetail seat (3) links to each other with supporting plate (2), and supporting plate (2) links to each other with silicon ingot with bonding linking to each other of glass plate (4), glass plate (4), and line of cut (6) is uniformly on guide roller (1); Many mortar pipes (5) are distributed in the whole cutter sweep; The central shaft of first silicon ingot (E1) and the central shaft (E2) of second silicon ingot are parallel distribution, drift angle (A1) in the cross-sectional distribution along the vertical ground direction of first silicon ingot has on first, outer drift angle (B1) on first, first time outer drift angle (C1), drift angle (D1) in first time; Drift angle (A2) in the cross-sectional distribution along vertical ground face direction of second silicon ingot has on second, outer drift angle (B2) on second, second time outer drift angle (C2), drift angle (D2) in second time; It is characterized in that: first time outer drift angle (C1) perpendicular to horizontal distance be higher than drift angle in first time (D1) perpendicular to horizontal apart from the 1.4-1.6 millimeter; Second time outer drift angle (C2) perpendicular to horizontal distance be higher than drift angle in second time (D2) perpendicular to horizontal apart from the 1.4-1.6 millimeter.
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| CN201010114101A CN101791828A (en) | 2010-02-25 | 2010-02-25 | Deflection angle multi-line cutting method and cutting device thereof |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102107465A (en) * | 2010-11-30 | 2011-06-29 | 西安隆基硅材料股份有限公司 | Method and device for reducing cutting line mark of solar silicon slice |
| CN102729347A (en) * | 2011-04-05 | 2012-10-17 | 硅电子股份公司 | Method for cutting workpiece with wire saw |
| CN103056977A (en) * | 2011-10-22 | 2013-04-24 | 应用材料瑞士有限责任公司 | Clamping assembly for wire guide of wire saw |
| TWI552219B (en) * | 2014-05-28 | 2016-10-01 | 國立清華大學 | Ingot cutting method capable of reducing wafer damage percentage |
| CN106112942A (en) * | 2016-08-24 | 2016-11-16 | 高佳太阳能股份有限公司 | A kind of silicon ingot turnover rack |
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2010
- 2010-02-25 CN CN201010114101A patent/CN101791828A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102107465A (en) * | 2010-11-30 | 2011-06-29 | 西安隆基硅材料股份有限公司 | Method and device for reducing cutting line mark of solar silicon slice |
| CN102729347A (en) * | 2011-04-05 | 2012-10-17 | 硅电子股份公司 | Method for cutting workpiece with wire saw |
| US9073235B2 (en) | 2011-04-05 | 2015-07-07 | Siltronic Ag | Method for cutting workpiece with wire saw |
| CN102729347B (en) * | 2011-04-05 | 2015-08-12 | 硅电子股份公司 | Utilize the method for scroll saw cutting workpiece |
| CN103056977A (en) * | 2011-10-22 | 2013-04-24 | 应用材料瑞士有限责任公司 | Clamping assembly for wire guide of wire saw |
| CN103056977B (en) * | 2011-10-22 | 2016-07-06 | 应用材料公司 | Clamp assembly for the line guiding piece of scroll saw |
| TWI552219B (en) * | 2014-05-28 | 2016-10-01 | 國立清華大學 | Ingot cutting method capable of reducing wafer damage percentage |
| CN106112942A (en) * | 2016-08-24 | 2016-11-16 | 高佳太阳能股份有限公司 | A kind of silicon ingot turnover rack |
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Application publication date: 20100804 |