CN101783273B - Method for manufacturing bottom gate type FED lower plate pattern by adopting positive photoresist - Google Patents
Method for manufacturing bottom gate type FED lower plate pattern by adopting positive photoresist Download PDFInfo
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- CN101783273B CN101783273B CN2010101219840A CN201010121984A CN101783273B CN 101783273 B CN101783273 B CN 101783273B CN 2010101219840 A CN2010101219840 A CN 2010101219840A CN 201010121984 A CN201010121984 A CN 201010121984A CN 101783273 B CN101783273 B CN 101783273B
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Abstract
The invention relates to a method for manufacturing a bottom gate type FED lower plate pattern by adopting positive photoresist for a field emission display. The method comprises the following steps: 1) preparing photosensitive silver paste; 2) manufacturing a gate layer (5) pattern in a cleaned cathode glass substrate (4) by photolithography; 3) manufacturing an insulating material pattern in the gate layer (5) by printing and sintering to obtain a cathode resistance layer (6); 4) using the photosensitive silver paste to manufacture a layer of cathode layer (7) pattern by the photolithography; 5) filling a layer of the positive photoresist (p), exposing and developing under an ultraviolet lamp after drying, thus obtaining a cathode line gap filling pattern p; 6) using electrophoresis, printing and the photolithography to manufacture a cathode emitter (8); and 7) removing the photoresist (p), thus obtaining a complete bottom gate type FED lower substrate structure. The substrate structure made by the method realizes complete insulation of a gate surface and a cathode surface, and solves the problem of short circuit of the gate surface and the cathode surface.
Description
Technical field
The present invention relates to the technical field that Field Emission Display is made, be specifically related to a kind of Field Emission Display (Field Emission Display; FED) manufacture method of the FED lower plate figure of grid layer, dielectric layer, cathode pattern and protection gate surface making emitter.
Background technology
Field Emission Display among the present invention is to bombard the fluorescent material on the screen through the emitter ejected electron on electric field spontaneous emission negative electrode (cathode emitter) material, thereby activated phosphor is luminous.Be characterized in light, thin, brightness is high, the visual angle is wide, reaction is fast.
Consulting shown in Figure 1ly, is prior art Field Emission Display modular construction sketch map.The Field Emission Display of bottom gate type, its structure comprises anode and negative electrode at least, is provided with separaant 9 between this anode and the negative electrode, so that the interval of vacuum area between anode and the negative electrode to be provided, and as the support between the upper and lower base plate.
As shown in Figure 1, this anode comprises an anode glass substrate 1 and anode conductive layer 2 and a fluorescent powder coating 3 at least; And this negative electrode comprises a cathode glass substrate 4, grid layer 5, cathode resistor layer 6, cathode layer 7 and cathode emitter 8 (being CNT CNT) at least; Wherein this anode and negative electrode are to keep vacuum area by separaant 9; And by the electric field that has a voltage difference to form between grid and the negative electrode; Make the emitter 8 on the negative electrode disengage electronics, make it the impact fluorescence powder through the high voltage electric field accelerated electron between anode and the negative electrode again and luminous.
When existing FED lower plate is made cathode emitter 8 (CNT CNT); 4,5,6,7 figures have been made and have been finished in the lower plate, generally adopt electrical methods such as electrophoresis, plating to make the method that cathode emitter 8 (CNT CNT) or print process, photoetching process etc. are directly made emitter.In these methods; Because lower plate grid layer 5 surfaces expose; When making cathode emitter 8 (CNT CNT); Be difficult to avoid cathode emitter 8 (CNT CNT) accumulation (like Fig. 2) of on grid layer 5 surfaces, being scattered, occur the situation of cathode layer 7 and grid layer 5 short circuits when three electrodes add voltage after encapsulation.
Summary of the invention
In order to overcome above-mentioned deficiency, the present invention provides a kind of method of utilizing positive photoresist to make bottom-gate FED lower plate graphics, and the method through before making emitter, gate surface being protected makes gate surface thoroughly insulated with cathode surface; And will attach at the CNT on photoresist surface and remove in the lump, thoroughly solve the grid and the cathode surface problem of short-circuit that cause easily when emitter is made with photoresist.
The objective of the invention is to realize that through following technical proposals a kind of method of utilizing positive photoresist to make bottom-gate FED lower plate graphics realizes through following steps:
1) preparation photosensitive silver slurry; Silver-colored monomer, methacrylic resin, light trigger, the macromolecule dispersing agent mixed grinding of parts by weight is even;
2) on the cathode glass substrate after the clean, adopt the figure of photosensitive silver slurry manufacturing grid layer in the step 1) through photoetching process;
3) on the grid layer of making, one or more layers insulating material figure is made in printing, and at 530～590 ℃, sintering 20～30min obtains the cathode resistor layer;
4) on above-mentioned cathode resistor layer, adopt the photosensitive silver slurry to make the figure of one deck cathode layer through photoetching process;
5) in above-mentioned steps 4) fill one deck photoresist p on the substrate accomplished,
Adopt positive photoresist to fill the negative electrode gap; Earlier with the print process printing with whole printing of the substrate of cathode layer figure one deck positive photoresist; After adopting 75～100 ℃ of drying 8～30min, adopt exposure under the corresponding mask pattern uviol lamp, exposure is 50～500mJ/cm
2Use equivalent concentration be 0.26 TMAH TMAH developer solution at 15～25 ℃, 10～50S develops; Can obtain cathode line interspace pattern filling p;
6) make cathode emitter, promptly CNT adopts electrophoresis or printing, photoetching method to make cathode emitter;
7) remove photoresist p:
Filler is a positive photoresist, adopts the uv-exposure method, and no mask blocks exposure back developer solution removes the same step 5) of exposure and developer solution;
Can obtain complete bottom gate type FED lower substrate structure.
Said photosensitive silver slurry is prepared from following materials based on weight:
Silver monomer 50～80;
Methacrylic resin 10～30;
Light trigger 1～5;
2,2,4-trimethyl-1,3 pentanediol mono isobutyrate 5～15;
Macromolecule dispersing agent 0.5～1.
Said light trigger is 2,4,6-trimethylbenzoyl phenyl-phosphonic acid ethyl ester or 2-methyl isophthalic acid-[4-methyl mercapto phenyl]-2-morpholinyl-1-acetone.
Said macromolecule dispersing agent is a high-molecular block copolymer; Be specially BYK410, BYK140, BYK2025, BYK180 or BYK171.
Said filling positive photoresist, this positive photoresist is mixed formulated by following materials based on weight:
2-diazonium-1-naphthoquinones 5～20;
Phenolic aldehyde formaldehyde 20～60;
1-Methoxy-2-propyl acetate 25～70.
Said manufacturing grid layer pattern or making cathode layer figure comprise the steps:
A) on the cathode glass substrate after the clean, through printing one or more layers photosensitive silver slurry preparation silver electrode layer;
B) place baking oven to toast substrate in the step a), baking temperature is that 80～120 ℃, stoving time are 10～40min, natural cooling then;
C) adopt the mask of required grid layer or cathode layer figure to do mask, the above-mentioned substrate of doing behind the mask is placed uviol lamp under make public, exposure is 100～800mJ/cm
2
D) substrate of above-mentioned exposure employing mass percent concentration is 0.2～1% Na
2CO
3Solution develops, and development pressure is 1.5kgf/cm
2, developing time is 10～50S, obtains required grid layer or cathode layer figure;
E) with grid layer after the above-mentioned processing or cathode layer figure sintering: be incubated 10～30min down at 500～590 ℃.
The invention has the beneficial effects as follows; Through making cathode emitter 8 is coating one deck photoresist P (like Fig. 3) between the negative electrode gap before on grid layer 5 surfaces; Avoid cathode emitter 8 (being CNT) directly to contact grid layer 5 surfaces, after a negative electrode beam 8 completes (like Fig. 4), when grid layer 5 photomask surface glue p being removed with developer solution; The CNT that its surface possibly occur is also removed simultaneously, and greatly degree has reduced the deposition of CNT on grid layer 5 surfaces.
Bottom-gate FED lower plate structure by the above-mentioned steps making; Through the method for before making emitter, gate surface being protected; Make gate surface thoroughly insulate with cathode surface; After removing photoresist, attach at the CNT on photoresist surface and also remove thereupon, thoroughly solved the grid layer 7 and cathode layer 5 surperficial problem of short-circuit that cause easily when emitter is made.
Description of drawings
Fig. 1 is a Field Emission Display modular construction sketch map;
Fig. 2 causes short circuit sketch map between the negative electrode grid easily for not adopting the gate protection method directly to make emitter;
Fig. 3 is for making one deck gate surface protective layer sketch map before making cathode emitter described in the present invention;
Fig. 4 makes the emitter sketch map after adopting manufacturing grid sealer of the present invention.
Wherein: 1, anode glass substrate; 2, anode conductive layer; 3, fluorescent powder coating; 4, cathode glass substrate; 5, grid layer; 6, cathode resistor layer; 7, cathode layer; 8, cathode emitter; 9, separaant; P, photoresist.
Embodiment
Below in conjunction with specific embodiment the present invention is further specified.Need to prove, below provide preferred embodiment and only be used for the present invention is done detailed explanation, but be not to be used to limit practical range of the present invention that every parameter in technical scheme scope of the present invention selects all to belong to the scope of the present invention's protection.
Embodiment 1
1) preparation photosensitive silver slurry:
This photosensitive silver slurry is by the silver-colored monomer of 60 weight portions, the methacrylic resin of 30 weight portions, the light trigger 2 of 4 weight portions; 4; 2 of 6-trimethylbenzoyl phenyl-phosphonic acid ethyl ester, 5 weight portions; 2, the macromolecule dispersing agent BYK410 mixed grinding of 4-trimethyl-1,3 pentanediol mono isobutyrate and 1 weight portion evenly constitutes;
2) on the cathode glass substrate after the clean 4, adopt above-mentioned steps 1 through photoetching process) described in the figure of photosensitive silver slurry manufacturing grid layer 5;
The step of manufacturing grid layer 5 figure specifically comprises:
A). on the cathode glass substrate 4 after the clean, the photosensitive silver slurry in printing one deck step 1), preparation silver electrode layer;
B). place baking oven to toast substrate in the step a), baking temperature is that 95 ℃, stoving time are 30min, natural cooling then;
C). the mask through required grid layer 5 figures is done mask, and the above-mentioned substrate of doing behind the mask is placed exposure under the uviol lamp, and exposure is 800mJ/cm
2
D). the substrate employing mass percent concentration of above-mentioned exposure is 0.4% Na
2CO
3Solution develops, and development pressure is 1.5kgf/cm
2, developing time is 20S, obtains required grid layer 5 figures;
E). with the sintering in sintering furnace of the substrate after the above-mentioned processing, be incubated 30min down at 500 ℃;
3) on the grid layer of making 5 figures, the two layers of insulation material figure is made in printing, and at 570 ℃ of insulation 20min sintering, as cathode resistor layer 6;
4) on the substrate that step 3) is accomplished, adopt the described photosensitive silver slurry of step 1) to make one deck cathode layer 7 figures, its making step and parameter synchronization rapid 2) through photoetching process;
5) on the substrate that step 4) is accomplished, fill one deck positive photoresist p (as shown in Figure 3);
Positive photoresist is mixed and is constituted by 2-diazonium-1-naphthoquinones 20 weight portions and phenolic resins 50 weight portions, 1-Methoxy-2-propyl acetate 35 weight portions;
Its pattern-producing method is printing one deck positive photoresist on the basis of step 5) substrate, behind 75 ℃ of dry 30min, adopts corresponding mask pattern to block under uviol lamp and makes public, and exposure is 50mJ/cm
2Develop and adopt TMAH (TMAH) solution (equivalent concentration is 0.26,15 ℃ of temperature), developing time is 10S, can obtain filling in the cathode layer 7 lines gaps lower plate figure of photoresist p;
6) make cathode emitter 8 (being CNT, as shown in Figure 4): adopt methods such as electrophoresis, printing, photoetching to make cathode emitter 8;
7) on the substrate that step 6) is accomplished, remove photoresist p, its method is substrate not to be had mask block the exposure back and adopt developer solution to remove (wherein used exposure and developer solution situation are with identical during making positive photoresist figure in the step 5));
Can obtain complete bottom gate type FED lower substrate structure.
In the present embodiment step 5),, can avoid cathode emitter 8 (being CNT) directly to contact grid layer 5 surfaces in the mode of cathode layer 7 inter-pattern spaces filling one deck photoresist.
In the present embodiment step 6), when with developer solution grid layer 5 photomask surface glue p being removed, the CNT that its surface possibly occur is also removed simultaneously, and greatly degree has reduced the deposition of CNT on grid layer 5 surfaces.
The bottom-gate FED lower plate structure that the present invention is made by above-mentioned steps; Through the method for before making emitter, gate surface being protected; Make gate surface thoroughly insulate with cathode surface; After removing photoresist, attach at the CNT on photoresist surface and also remove thereupon, thoroughly solved the grid layer 7 and cathode layer 5 surperficial problem of short-circuit that cause easily when emitter is made.
Embodiment 2
1) preparation photosensitive silver slurry:
This photosensitive silver is starched by 2 of light trigger 2-methyl isophthalic acid-[4-methyl mercapto the phenyl]-2-morpholinyl-1-acetone of the methacrylic resin of the silver-colored monomer of 80 weight portions, 10 weight portions, 1 weight portion, 8.5 weight portions; 2; The macromolecule dispersing agent BYK180 of 4-trimethyl-1,3 pentanediol mono isobutyrate and 0.5 weight portion forms;
2) on the cathode glass substrate after the clean 4, adopt above-mentioned steps 1 through photoetching process) described in the figure of photosensitive silver slurry manufacturing grid layer 5;
The step 2 of manufacturing grid layer 5 figure) specifically comprise:
A). on the cathode glass substrate 4 after the clean, the photosensitive silver slurry in printing one deck step 1), preparation silver electrode layer;
B). place baking oven to toast substrate in the step a), baking temperature is that 80 ℃, stoving time are 40min, natural cooling then;
C) adopt the mask of required grid layer 5 figures to do mask, the above-mentioned substrate of doing behind the mask is placed uviol lamp under make public, exposure is 500mJ/cm
2
D). the substrate employing mass percent concentration of above-mentioned exposure is 0.2% Na
2CO
3Solution develops, and development pressure is 1.5kgf/cm
2, developing time is 50S, obtains required grid layer 5 figures;
E). with the sintering in sintering furnace of the substrate after the above-mentioned processing, be incubated 10min down at 590 ℃;
3) on the grid layer of making 5 figures, three-layer insulated material figure is made in printing and at 590 ℃ of insulation 30min, sintering is as cathode resistor layer 6;
4) on the substrate that step 3) is accomplished, adopt the described photosensitive silver slurry of step 1) to make one deck cathode layer 7 figures, its making step and parameter synchronization rapid 2) through photoetching process;
5) on the substrate that step 4) is accomplished, fill one deck positive photoresist p (as shown in Figure 3);
Positive photoresist is mixed and is constituted by 2-diazonium-1-naphthoquinones 15 weight portions and phenolic resins 60 weight portions, 1-Methoxy-2-propyl acetate 25 weight portions;
Its pattern-producing method is printing one deck positive photoresist on the basis of step 5) substrate, behind 85 ℃ of dry 20min, adopts corresponding mask pattern to block under uviol lamp and makes public, and exposure is 150mJ/cm
2Develop and adopt TMAH (TMAH) solution (equivalent concentration is 0.26,20 ℃ of temperature), developing time is 20S, can obtain filling in the cathode layer 7 lines gaps lower plate figure of photoresist p;
6) make cathode emitter 8 (being CNT, as shown in Figure 4): can adopt methods such as electrophoresis, printing, photoetching to make cathode emitter;
7) on the substrate that step 6) is accomplished, remove photoresist p; Its method is substrate not to be had mask block exposure back and adopt developer solution to remove (wherein used exposure and developer solution situation are with identical during making positive photoresist figure in the step 5));
Can obtain complete bottom gate type FED lower substrate structure.
1) preparation photosensitive silver slurry:
This photosensitive silver slurry is by the silver-colored monomer of 50 weight portions, the methacrylic resin of 29 weight portions, the light trigger 2 of 5 weight portions; 4; 2 of 6-trimethylbenzoyl phenyl-phosphonic acid ethyl ester, 15 weight portions; 2, the macromolecule dispersing agent BYK410 of 4-trimethyl-1,3 pentanediol mono isobutyrate and 1 weight portion mixes formation;
2) on the cathode glass substrate after the clean 4, adopt above-mentioned steps 1 through photoetching process) described in photosensitive silver slurry manufacturing grid layer 5 figure;
The step of manufacturing grid layer 5 figure specifically comprises:
A). on the cathode glass substrate 4 after the clean, print the photosensitive silver slurry in the two-layer step 1), preparation silver electrode layer,
B). place baking oven to toast substrate in the step a), baking temperature is that 120 ℃, stoving time are 10min, natural cooling then;
C). adopt the mask of required grid layer 5 figures to do mask, the above-mentioned substrate of doing behind the mask is placed exposure under the uviol lamp, exposure is 100mJ/cm
2
D). the substrate employing mass percent concentration of above-mentioned exposure is 1% Na
2CO
3Solution develops, and development pressure is 1.5kgf/cm
2, developing time is 10S, obtains required grid layer 5 figures;
E). with the sintering in sintering furnace of the substrate after the above-mentioned processing, be incubated 20min down at 550 ℃;
3) on the grid layer of making 5 figures, printing is made one deck insulating material figure and is incubated the 25min sintering as cathode resistor layer 6 at 530 ℃;
4) on the substrate that step 3) is accomplished, adopt the described photosensitive silver slurry of step 1) to make one deck cathode layer 7 figures, its making step and parameter synchronization rapid 2) through photoetching process;
5) on the substrate that step 4) is accomplished, fill one deck positive photoresist p (as shown in Figure 3);
Positive photoresist is mixed and is constituted by 2-diazonium-1-naphthoquinones 10 weight portions and phenolic resins 20 weight portions, 1-Methoxy-2-propyl acetate 70 weight portions; Fully mix formation;
Its pattern-producing method is printing one deck positive photoresist on the basis of step 5) substrate, behind 80 ℃ of dry 8min, adopts corresponding mask pattern to block under uviol lamp and makes public, and exposure is 500mJ/cm
2Develop and adopt TMAH (TMAH) solution (equivalent concentration is 0.26,25 ℃ of temperature), developing time is 50S, can obtain filling in the cathode layer 7 lines gaps lower plate figure of photoresist p;
6) make cathode emitter 8 (being CNT, as shown in Figure 4); Can adopt methods such as electrophoresis, printing, photoetching to make cathode emitter;
7) on the substrate that step 6) is accomplished, remove photoresist p; Filler is the method that positive photoresist can adopt uv-exposure, and no mask blocks exposure back and adopts developer solution to remove (wherein used exposure and developer solution situation are with identical during making positive photoresist figure in the step 5));
Can obtain complete bottom gate type FED lower substrate structure.
Embodiment 4
1) preparation photosensitive silver slurry:
This photosensitive silver is starched by 2 of light trigger 2-methyl isophthalic acid-[4-methyl mercapto the phenyl]-2-morpholinyl-1-acetone of the methacrylic resin of the silver-colored monomer of 60 weight portions, 30 weight portions, 4 weight portions, 5 weight portions; 2; The macromolecule dispersing agent BYK410 mixed grinding of 4-trimethyl-1,3 pentanediol mono isobutyrate and 1 weight portion evenly constitutes;
Above-mentioned macromolecule dispersing agent or employing BYK140 or BYK2025 or BYK171.
2) on the cathode glass substrate after the clean 4, adopt above-mentioned steps 1 through photoetching process) described in photosensitive silver slurry manufacturing grid layer 5 figure;
The step of manufacturing grid figure 5 specifically comprises:
A). on the cathode glass substrate 4 after the clean, the photosensitive silver slurry in printing one deck step 1), preparation silver electrode layer;
B). place baking oven to toast substrate in the step a), baking temperature is that 120 ℃, stoving time are 10min, natural cooling then;
C). adopt the mask of required grid layer 5 figures to do mask, the above-mentioned substrate of doing behind the mask is placed exposure under the uviol lamp, exposure is 100mJ/cm
2
D). the substrate employing mass percent concentration of above-mentioned exposure is 0.2% Na
2CO
3Solution develops, and development pressure is 1.5kgf/cm
2, developing time is 10S, obtains required grid layer 5 figures;
E). with the sintering in sintering furnace of the substrate after the above-mentioned processing, be incubated 30min down at 530 ℃;
3) on the grid layer of making 5 figures, printing is made the two layers of insulation material figure and is incubated 20 sintering as cathode resistor layer 6 at 570 ℃;
4) on the substrate that step 3) is accomplished, adopt the described photosensitive silver slurry of step 1) to make one deck cathode layer 7 figures, its making step parameter synchronization rapid 2) through photoetching process;
5) on the substrate that step 4) is accomplished, fill one deck positive photoresist p (as shown in Figure 3);
Positive photoresist is mixed and is constituted by 2-diazonium-1-naphthoquinones 5 weight portions and phenolic resins 45 weight portions, 1-Methoxy-2-propyl acetate 50 weight portions;
Its pattern-producing method is printing one deck positive photoresist on the basis of step 5) substrate, behind 100 ℃ of dry 30min, adopts corresponding mask pattern to block under uviol lamp and makes public, and exposure is 150mJ/cm
2Develop and adopt TMAH (TMAH) solution (equivalent concentration is 0.26,25 ℃ of temperature), developing time is 10S, can obtain filling in the cathode layer 7 lines gaps lower plate figure of photoresist p;
6) make cathode emitter 8 (being CNT, as shown in Figure 4): can adopt methods such as electrophoresis, printing, photoetching to make cathode emitter;
7) on the substrate that step 6) is accomplished, remove photoresist p; Its method is substrate not to be had mask block exposure back and adopt developer solution to remove (wherein used exposure and developer solution situation are with identical during making positive photoresist figure in the step 5));
Can obtain complete bottom gate type FED lower substrate structure.
Claims (4)
1. one kind is utilized positive photoresist to make the bottom-gate FED lower plate graphics method, it is characterized in that this method realizes through following steps:
1) preparation photosensitive silver slurry; Silver-colored monomer, methacrylic resin, light trigger, the macromolecule dispersing agent mixed grinding of parts by weight is even;
2) on the cathode glass substrate after the clean (4), adopt the figure of photosensitive silver slurry manufacturing grid layer (5) in the step 1) through photoetching process;
3) on the grid layer of making (5), one or more layers insulating material figure is made in printing, and at 590 ℃, sintering 30min obtains cathode resistor layer (6);
4) go up the figure that adopts photosensitive silver slurry making one deck cathode layer (7) through photoetching process at above-mentioned cathode resistor layer (6);
5) in above-mentioned steps 4) fill one deck photoresist (p) on the substrate accomplished;
Adopt positive photoresist to fill the negative electrode gap, earlier with the print process printing with whole printing of substrate one deck positive photoresist with cathode layer (7) figure, adopts 85 ℃ of dry 20min after, adopt under the corresponding mask pattern uviol lamp and make public, exposure is 150mJ/cm
2Use equivalent concentration be 0.26 TMAH TMAH developer solution at 20 ℃, development 20S; Can obtain cathode line interspace pattern filling;
6) make cathode emitter (8), promptly CNT adopts electrophoresis or printing, photoetching method to make cathode emitter (8);
7) remove photoresist (p):
Filler is a positive photoresist, adopts the uv-exposure method, and no mask blocks exposure back developer solution removes the same step 5) of exposure and developer solution;
Can obtain complete bottom gate type FED lower substrate structure.
2. a kind of method of utilizing positive photoresist to make bottom-gate FED lower plate graphics according to claim 1 is characterized in that, said photosensitive silver slurry is prepared from following materials based on weight:
Photosensitive silver is starched by 2 of light trigger 2-methyl isophthalic acid-[4-methyl mercapto the phenyl]-2-morpholinyl-1-acetone of the methacrylic resin of the silver-colored monomer of 80 weight portions, 10 weight portions, 1 weight portion, 8.5 weight portions; 2; The macromolecule dispersing agent BYK180 of 4-trimethyl-1,3 pentanediol mono isobutyrate and 0.5 weight portion forms.
3. a kind of method of utilizing positive photoresist to make bottom-gate FED lower plate graphics according to claim 1 is characterized in that, said filling positive photoresist, and this positive photoresist is mixed formulated by following materials based on weight:
2-diazonium-1-naphthoquinones 15;
Phenolic aldehyde formaldehyde 60;
1-Methoxy-2-propyl acetate 25.
4. a kind of method of utilizing positive photoresist to make bottom-gate FED lower plate graphics according to claim 1 is characterized in that, said manufacturing grid layer (5) figure or making cathode layer (7) figure comprise the steps:
A) on the cathode glass substrate after the clean (4), through printing one or more layers photosensitive silver slurry preparation silver electrode layer;
B) place baking oven to toast substrate in the step a), baking temperature is that 80 ℃, stoving time are 40min, natural cooling then;
C) adopt the mask of required grid layer (5) or cathode layer (7) figure to do mask, the above-mentioned substrate of doing behind the mask is placed exposure under the uviol lamp, exposure is 500mJ/cm
2
D) substrate of above-mentioned exposure employing mass percent concentration is 0.2% Na
2CO
3Solution develops, and development pressure is 1.5kgf/cm
2, developing time is 50S, obtains required grid layer (5) or cathode layer (7) figure;
E) with grid layer after the above-mentioned processing or cathode layer figure sintering: be incubated 30min down at 590 ℃.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101219840A CN101783273B (en) | 2010-03-11 | 2010-03-11 | Method for manufacturing bottom gate type FED lower plate pattern by adopting positive photoresist |
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|---|---|---|---|
| CN2010101219840A CN101783273B (en) | 2010-03-11 | 2010-03-11 | Method for manufacturing bottom gate type FED lower plate pattern by adopting positive photoresist |
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| CN101783273B true CN101783273B (en) | 2012-05-09 |
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