CN101774767A - Glass substrate etching solution for flat display - Google Patents
Glass substrate etching solution for flat display Download PDFInfo
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- CN101774767A CN101774767A CN201010109119A CN201010109119A CN101774767A CN 101774767 A CN101774767 A CN 101774767A CN 201010109119 A CN201010109119 A CN 201010109119A CN 201010109119 A CN201010109119 A CN 201010109119A CN 101774767 A CN101774767 A CN 101774767A
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Abstract
The invention discloses glass substrate etching solution for flat display. The glass substrate etching solution contains hydrogen fluoride pyridinium, strong acid, water and ethylene diamine tetraacetic acid, wherein the hydrogen fluoride pyridinium accounts for 10-20 percent of the total weight of the etching solution, the strong acid accounts for 30-70 percent of the total weight of the etching solution, the ethylene diamine tetraacetic acid accounts for 0.5-5 percent of the total weight of the etching solution, and the balance of water. The etching solution is safe, stable and effective, can well solve the problem of insoluble byproducts produced in the etching process and improve the etching speed and the etching effect. The etching solution is suitable for reducing the thickness of the glass substrates such as a thin film transistor (TFT), and the like.
Description
Technical field
The present invention relates to a kind of glass substrate etching solution, particularly a kind of glass substrate etching solution for flat display.
Background technology
In the flat pannel display field, comprise in plasma display (PDP), touch-screen (TP), liquid-crystal display (LCD) and the organic electroluminescent preparation process such as (OLED), in order further to alleviate the weight of display device, the increasing method of glass substrate being carried out attenuate that adopts of manufacturer.Normally used thining method has two kinds, and a kind of is physical method, polishes grinding with polishing powder, and this method attenuate time is long, and the product yield is low; Another kind method is a chemical method for etching, and this method attenuate time is short, and employed equipment drops into little, product yield height, and the composition of reducer is simple, all is some industrial acidic substance commonly used, and with low cost.
At present, carry out the reducer that manufacturer adopted of attenuate with chemical process, substantially all adopting hydrofluoric acid is main component, also has auxiliary again other strong acid that adds of some producers.When containing hydrofluoric acid in the etching solution, can have following problem: 1) hydrofluoric acid toxicity is big, and volatilization easily especially need be adopted comparatively high temps and concentration when configuration, and is not only dangerous high in the production process, and can cause huge pollution to environment; 2) by product of etching generation is adsorbed on glass, equipment and pipe surface easily, causes problems such as product surface poor processing effect, pipeline obstruction; 3) etch-rate instability in the production process, the utilization ratio of etching solution is relatively low, also can cause the liquid waste disposal amount big thus, and processing cost also increases thereupon.
Summary of the invention
The purpose of this invention is to provide a kind of glass substrate etching solution for flat display.
Sheet glass etching solution provided by the invention is made up of hydrogen fluoride pyridine salt, strong acid, water and ethylenediamine tetraacetic acid (EDTA); The per-cent that described hydrogen fluoride pyridine salt, strong acid and ethylenediamine tetraacetic acid (EDTA) account for described sheet glass etching solution gross weight is respectively: 10-20%, 30-70% and 0.5-5%, surplus is a water.
In the above-mentioned etching solution, the structural formula of described hydrogen fluoride pyridine salt is
Described etching solution be selected from following etching solution 1 '-26 ' in any one:
The etching solution of forming by the water of the ethylenediamine tetraacetic acid (EDTA) of the strong acid of the hydrogen fluoride pyridine salt of 10-20 weight part, 30-50 weight part, 0.5-5 weight part and 25-59.5 weight part 1 ';
The etching solution of forming by the water of the ethylenediamine tetraacetic acid (EDTA) of the strong acid of the hydrogen fluoride pyridine salt of 10-15 weight part, 30-50 weight part, 0.5-5 weight part and 34.5-59.5 weight part 2 ';
The etching solution of forming by the water of the ethylenediamine tetraacetic acid (EDTA) of the strong acid of the hydrogen fluoride pyridine salt of 15-20 weight part, 30-50 weight part, 0.5-5 weight part and 25-54.5 weight part 3 ';
The etching solution of forming by the water of the ethylenediamine tetraacetic acid (EDTA) of the strong acid of the hydrogen fluoride pyridine salt of 10-20 weight part, 30-40 weight part, 0.5-5 weight part and 25-59.5 weight part 4 ';
The etching solution of forming by the water of the ethylenediamine tetraacetic acid (EDTA) of the strong acid of the hydrogen fluoride pyridine salt of 10-15 weight part, 30-40 weight part, 0.5-5 weight part and 34.5-59.5 weight part 5 ';
The etching solution of forming by the water of the ethylenediamine tetraacetic acid (EDTA) of the sulfuric acid of the hydrogen fluoride pyridine salt of 10 weight parts, 30 weight parts, 0.5 weight part and 59.5 weight parts 6 ';
The etching solution of forming by the water of the ethylenediamine tetraacetic acid (EDTA) of the sulfuric acid of the hydrogen fluoride pyridine salt of 10 weight parts, 40 weight parts, 0.5 weight part and 49.5 weight parts 7 ';
The etching solution of forming by the water of the ethylenediamine tetraacetic acid (EDTA) of the sulfuric acid of the hydrogen fluoride pyridine salt of 10 weight parts, 50 weight parts, 0.5 weight part and 39.5 weight parts 8 ';
The etching solution of forming by the water of the ethylenediamine tetraacetic acid (EDTA) of the sulfuric acid of the hydrogen fluoride pyridine salt of 10 weight parts, 30 weight parts, 2 weight parts and 58 weight parts 9 ';
The etching solution of forming by the water of the ethylenediamine tetraacetic acid (EDTA) of the sulfuric acid of the hydrogen fluoride pyridine salt of 10 weight parts, 50 weight parts, 2 weight parts and 38 weight parts 10 ';
The etching solution of forming by the water of the ethylenediamine tetraacetic acid (EDTA) of the sulfuric acid of the hydrogen fluoride pyridine salt of 10 weight parts, 30 weight parts, 5 weight parts and 55 weight parts 11 ';
The etching solution of forming by the water of the ethylenediamine tetraacetic acid (EDTA) of the sulfuric acid of the hydrogen fluoride pyridine salt of 10 weight parts, 50 weight parts, 5 weight parts and 35 weight parts 12 ';
The etching solution of forming by the water of the ethylenediamine tetraacetic acid (EDTA) of the sulfuric acid of the hydrogen fluoride pyridine salt of 15 weight parts, 30 weight parts, 0.5 weight part and 54.5 weight parts 13 ';
The etching solution of forming by the water of the ethylenediamine tetraacetic acid (EDTA) of the sulfuric acid of the hydrogen fluoride pyridine salt of 15 weight parts, 50 weight parts, 0.5 weight part and 34.5 weight parts 14 ';
The etching solution of forming by the water of the ethylenediamine tetraacetic acid (EDTA) of the sulfuric acid of the hydrogen fluoride pyridine salt of 15 weight parts, 30 weight parts, 5 weight parts and 50 weight parts 15 ';
The etching solution of forming by the water of the ethylenediamine tetraacetic acid (EDTA) of the sulfuric acid of the hydrogen fluoride pyridine salt of 20 weight parts, 30 weight parts, 0.5 weight part and 29.5 weight parts 16 ';
The etching solution of forming by the water of the ethylenediamine tetraacetic acid (EDTA) of the sulfuric acid of the hydrogen fluoride pyridine salt of 20 weight parts, 50 weight parts, 0.5 weight part and 29.5 weight parts 17 ';
The etching solution of forming by the water of the ethylenediamine tetraacetic acid (EDTA) of the phosphoric acid of the sulfuric acid of the hydrogen fluoride pyridine salt of 10 weight parts, 20 weight parts, 10 weight parts, 0.5 weight part and 59.5 weight parts 18 ';
The etching solution of forming by the water of the ethylenediamine tetraacetic acid (EDTA) of the phosphoric acid of the sulfuric acid of the hydrogen fluoride pyridine salt of 10 weight parts, 20 weight parts, 20 weight parts, 0.5 weight part and 49.5 weight parts 19 ';
The etching solution of forming by the water of the ethylenediamine tetraacetic acid (EDTA) of the phosphoric acid of the sulfuric acid of the hydrogen fluoride pyridine salt of 10 weight parts, 20 weight parts, 30 weight parts, 0.5 weight part and 39.5 weight parts 20 ';
The etching solution of forming by the water of the ethylenediamine tetraacetic acid (EDTA) of the phosphoric acid of the sulfuric acid of the hydrogen fluoride pyridine salt of 10 weight parts, 20 weight parts, 10 weight parts, 5 weight parts and 55 weight parts 21 ';
The etching solution of forming by the water of the ethylenediamine tetraacetic acid (EDTA) of the phosphoric acid of the sulfuric acid of the hydrogen fluoride pyridine salt of 10 weight parts, 20 weight parts, 30 weight parts, 5 weight parts and 35 weight parts 22 ';
The etching solution of forming by the water of the ethylenediamine tetraacetic acid (EDTA) of the phosphoric acid of the sulfuric acid of the hydrogen fluoride pyridine salt of 10 weight parts, 40 weight parts, 10 weight parts, 5 weight parts and 35 weight parts 23 ';
The etching solution of forming by the water of the ethylenediamine tetraacetic acid (EDTA) of the phosphoric acid of the sulfuric acid of the hydrogen fluoride pyridine salt of 15 weight parts, 20 weight parts, 10 weight parts, 5 weight parts and 50 weight parts 24 ';
The etching solution of forming by the water of the ethylenediamine tetraacetic acid (EDTA) of the phosphoric acid of the sulfuric acid of the hydrogen fluoride pyridine salt of 20 weight parts, 20 weight parts, 10 weight parts, 5 weight parts and 45 weight parts 25 ';
The etching solution of forming by the water of the ethylenediamine tetraacetic acid (EDTA) of the phosphoric acid of the sulfuric acid of the hydrogen fluoride pyridine salt of 20 weight parts, 20 weight parts, 30 weight parts, 5 weight parts and 25 weight parts 26 '.
Described strong acid is selected from least a in sulfuric acid and the phosphoric acid; When described strong acid was the mixture of sulfuric acid and phosphoric acid, in per 100 parts of described etching solutions, the mixture of sulfuric acid and phosphoric acid was selected from any one among the following mixture a-mixture f:
The mixture a that forms by the phosphoric acid of the sulfuric acid of 20 weight parts and 10 weight parts;
The mixture b that forms by the phosphoric acid of the sulfuric acid of 30 weight parts and 20 weight parts;
The mixture c that forms by the phosphoric acid of the sulfuric acid of 40 weight parts and 30 weight parts;
The mixture d that forms by the phosphoric acid of the sulfuric acid of 20-30 weight part and 10-20 weight part;
The Mischung of forming by the phosphoric acid of the sulfuric acid of 20-40 weight part and 10-30 weight part;
The mixture f that forms by the phosphoric acid of the sulfuric acid of 30-40 weight part and 20-30 weight part.
The method of the above-mentioned sheet glass etching solution of preparation provided by the invention, be with hydrogen fluoride pyridine salt, strong acid, water and ethylenediamine tetraacetic acid (EDTA) at 20～30 ℃ of mixings, obtain described sheet glass etching solution;
The per-cent that described hydrogen fluoride pyridine salt, strong acid and ethylenediamine tetraacetic acid (EDTA) account for described sheet glass etching solution gross weight is respectively: 10-20%, 30-70% and 0.5-5%, surplus is a water.
In this method, the structural formula of described hydrogen fluoride pyridine salt is
In the described etching solution weight part of each component be selected from following component 1 '-component 26 ' in any one:
Component 1 ': the ethylenediamine tetraacetic acid (EDTA) of the hydrogen fluoride pyridine salt of 10-20 weight part, the strong acid of 30-50 weight part, 0.5-5 weight part and the water of 25-59.5 weight part;
Component 2 ': the ethylenediamine tetraacetic acid (EDTA) of the hydrogen fluoride pyridine salt of 10-15 weight part, the strong acid of 30-50 weight part, 0.5-5 weight part and the water of 34.5-59.5 weight part;
Component 3 ': the ethylenediamine tetraacetic acid (EDTA) of the hydrogen fluoride pyridine salt of 15-20 weight part, the strong acid of 30-50 weight part, 0.5-5 weight part and the water of 25-54.5 weight part;
Component 4 ': the ethylenediamine tetraacetic acid (EDTA) of the hydrogen fluoride pyridine salt of 10-20 weight part, the strong acid of 30-40 weight part, 0.5-5 weight part and the water of 25-59.5 weight part;
Component 5 ': the ethylenediamine tetraacetic acid (EDTA) of the hydrogen fluoride pyridine salt of 10-15 weight part, the strong acid of 30-40 weight part, 0.5-5 weight part and the water of 34.5-59.5 weight part;
Component 6 ': the ethylenediamine tetraacetic acid (EDTA) of the hydrogen fluoride pyridine salt of 10 weight parts, the sulfuric acid of 30 weight parts, 0.5 weight part and the water of 59.5 weight parts;
Component 7 ': the ethylenediamine tetraacetic acid (EDTA) of the hydrogen fluoride pyridine salt of 10 weight parts, the sulfuric acid of 40 weight parts, 0.5 weight part and the water of 49.5 weight parts;
Component 8 ': the ethylenediamine tetraacetic acid (EDTA) of the hydrogen fluoride pyridine salt of 10 weight parts, the sulfuric acid of 50 weight parts, 0.5 weight part and the water of 39.5 weight parts;
Component 9 ': the ethylenediamine tetraacetic acid (EDTA) of the hydrogen fluoride pyridine salt of 10 weight parts, the sulfuric acid of 30 weight parts, 2 weight parts and the water of 58 weight parts;
Component 10 ': the ethylenediamine tetraacetic acid (EDTA) of the hydrogen fluoride pyridine salt of 10 weight parts, the sulfuric acid of 50 weight parts, 2 weight parts and the water of 38 weight parts;
Component 11 ': the ethylenediamine tetraacetic acid (EDTA) of the hydrogen fluoride pyridine salt of 10 weight parts, the sulfuric acid of 30 weight parts, 5 weight parts and the water of 55 weight parts;
Component 12 ': the ethylenediamine tetraacetic acid (EDTA) of the hydrogen fluoride pyridine salt of 10 weight parts, the sulfuric acid of 50 weight parts, 5 weight parts and the water of 35 weight parts;
Component 13 ': the ethylenediamine tetraacetic acid (EDTA) of the hydrogen fluoride pyridine salt of 15 weight parts, the sulfuric acid of 30 weight parts, 0.5 weight part and the water of 54.5 weight parts;
Component 14 ': the ethylenediamine tetraacetic acid (EDTA) of the hydrogen fluoride pyridine salt of 15 weight parts, the sulfuric acid of 50 weight parts, 0.5 weight part and the water of 34.5 weight parts;
Component 15 ': the ethylenediamine tetraacetic acid (EDTA) of the hydrogen fluoride pyridine salt of 15 weight parts, the sulfuric acid of 30 weight parts, 5 weight parts and the water of 50 weight parts;
Component 16 ': the ethylenediamine tetraacetic acid (EDTA) of the hydrogen fluoride pyridine salt of 20 weight parts, the sulfuric acid of 30 weight parts, 0.5 weight part and the water of 29.5 weight parts;
Component 17 ': the ethylenediamine tetraacetic acid (EDTA) of the hydrogen fluoride pyridine salt of 20 weight parts, the sulfuric acid of 50 weight parts, 0.5 weight part and the water of 29.5 weight parts;
Component 18 ': the phosphoric acid of the hydrogen fluoride pyridine salt of 10 weight parts, the sulfuric acid of 20 weight parts, 10 weight parts, the ethylenediamine tetraacetic acid (EDTA) of 0.5 weight part and the water of 59.5 weight parts;
Component 19 ': the phosphoric acid of the hydrogen fluoride pyridine salt of 10 weight parts, the sulfuric acid of 20 weight parts, 20 weight parts, the ethylenediamine tetraacetic acid (EDTA) of 0.5 weight part and the water of 49.5 weight parts;
Component 20 ': the phosphoric acid of the hydrogen fluoride pyridine salt of 10 weight parts, the sulfuric acid of 20 weight parts, 30 weight parts, the ethylenediamine tetraacetic acid (EDTA) of 0.5 weight part and the water of 39.5 weight parts;
Component 21 ': the phosphoric acid of the hydrogen fluoride pyridine salt of 10 weight parts, the sulfuric acid of 20 weight parts, 10 weight parts, the ethylenediamine tetraacetic acid (EDTA) of 5 weight parts and the water of 55 weight parts;
Component 22 ': the phosphoric acid of the hydrogen fluoride pyridine salt of 10 weight parts, the sulfuric acid of 20 weight parts, 30 weight parts, the ethylenediamine tetraacetic acid (EDTA) of 5 weight parts and the water of 35 weight parts;
Component 23 ': the phosphoric acid of the hydrogen fluoride pyridine salt of 10 weight parts, the sulfuric acid of 40 weight parts, 10 weight parts, the ethylenediamine tetraacetic acid (EDTA) of 5 weight parts and the water of 35 weight parts;
Component 24 ': the phosphoric acid of the hydrogen fluoride pyridine salt of 15 weight parts, the sulfuric acid of 20 weight parts, 10 weight parts, the ethylenediamine tetraacetic acid (EDTA) of 5 weight parts and the water of 50 weight parts;
Component 25 ': the phosphoric acid of the hydrogen fluoride pyridine salt of 20 weight parts, the sulfuric acid of 20 weight parts, 10 weight parts, the ethylenediamine tetraacetic acid (EDTA) of 5 weight parts and the water of 45 weight parts;
Component 26 ': the phosphoric acid of the hydrogen fluoride pyridine salt of 20 weight parts, the sulfuric acid of 20 weight parts, 30 weight parts, the ethylenediamine tetraacetic acid (EDTA) of 5 weight parts and the water of 25 weight parts.
Described strong acid is selected from least a in sulfuric acid and the phosphoric acid; When described strong acid was the mixture of sulfuric acid and phosphoric acid, in per 100 parts of described etching solutions, the mixture of sulfuric acid and phosphoric acid was selected from any one among the following mixture a-mixture f:
The mixture a that forms by the phosphoric acid of the sulfuric acid of 20 weight parts and 10 weight parts;
The mixture b that forms by the phosphoric acid of the sulfuric acid of 30 weight parts and 20 weight parts;
The mixture c that forms by the phosphoric acid of the sulfuric acid of 40 weight parts and 30 weight parts;
The mixture d that forms by the phosphoric acid of the sulfuric acid of 20-30 weight part and 10-20 weight part;
The Mischung of forming by the phosphoric acid of the sulfuric acid of 20-40 weight part and 10-30 weight part;
The mixture f that forms by the phosphoric acid of the sulfuric acid of 30-40 weight part and 20-30 weight part.
In addition, this sheet glass etching solution with the application in the etching solution, also belongs to protection scope of the present invention at preparation sheet glass attenuate.
Sheet glass attenuate etching solution provided by the invention adopts hydrogen fluoride pyridine salt, strong acid and water as basal component, and adds metal-chelate mixture ethylenediamine tetraacetic acid (EDTA) (Ethylene Diamine Tetraacetic Acid, ethylenediaminetetraacetic acid).Because hydrogen fluoride pyridine salt has characteristics not volatile, that toxicity is little; The characteristics of EDTA are that the metal ion that produces can be with etching the time forms inner complex, be more prone to by water dissolution, this etching solution is a kind of safe, stable, etching solution efficiently, can be good at solving the insoluble by product problem that produces in the etching process, also improved etch-rate and etch effect simultaneously.This etching solution is applicable to the attenuate of TFT glass substrate, and liquid-crystal display (LCD) (specifically comprising twisted nematic (TN), super-twist nematic (STN) and colorful ultra-twist nematic (CSTN)), touch-screen (TP), organic electroluminescent (OLED) and plasma body (PDP) show the attenuate with glass substrate.
Embodiment
The invention will be further described below in conjunction with specific embodiment, but the present invention is not limited to following examples.
The present invention is that thin film transistor (TFT) thinning glass substrate of 0.8mm is that thickness is that the process of 0.5mm is as follows with thickness:
After TFT glass substrate 300mm is wide and the long size of 300mm finishes with the scavenging solution cleaning, the etching basket is put in setting, be fully immersed in then in the container that has temperature regulating device that fills etching solution of the present invention, temperature remained on 25～30 ℃, through 30 minutes etching, take out glass, use deionized water rinsing, again with after the special scavenging solution flushing, at last with deionized water rinsing and oven dry, measure the thickness of glass, require the thickness of glass heterogeneity less than 1%.
Embodiment 1,
Etching solution comprises the moiety of following weight percent: hydrogen fluoride pyridine salt 10%, sulfuric acid 30%, EDTA0.5%, pure water 59.5%.The various materials of aforementioned proportion are at room temperature stirred obtain etching solution provided by the invention.
Under 25～30 ℃, etch-rate is 2.5 microns/minute, and the thickness heterogeneity of glass substrate is less than 1% after the etching, and being equipped with has a small amount of white flocculent substance to produce in the container of etching solution, remove easily.
Embodiment 2,
Etching solution comprises the moiety of following weight percent: hydrogen fluoride pyridine salt 10%, sulfuric acid 40%, EDTA0.5%, pure water 49.5%.The various materials of aforementioned proportion are at room temperature stirred obtain etching solution provided by the invention.
Under 25～30 ℃, etch-rate is 4 microns/minute, and the thickness heterogeneity of glass substrate is less than 1% after the etching, and being equipped with has a small amount of white flocculent substance to produce in the container of etching solution, remove easily.
Embodiment 3,
Etching solution comprises the moiety of following weight percent: hydrogen fluoride pyridine salt 10%, sulfuric acid 50%, EDTA0.5%, pure water 39.5%.The various materials of aforementioned proportion are at room temperature stirred obtain etching solution provided by the invention.
Under 25～30 ℃, etch-rate is 8 microns/minute, and the thickness heterogeneity of glass substrate is less than 1% after the etching, and being equipped with has a small amount of white flocculent substance to produce in the container of etching solution, remove easily.
Embodiment 4,
Etching solution comprises the moiety of following weight percent: hydrogen fluoride pyridine salt 10%, sulfuric acid 30%, EDTA2%, pure water 58%.The various materials of aforementioned proportion are at room temperature stirred obtain etching solution provided by the invention.
Under 25～30 ℃, etch-rate is 3.5 microns/minute, and the thickness heterogeneity of glass substrate is less than 1% after the etching, and being equipped with has micro-white flocculent substance to produce in the container of etching solution, remove easily.
Embodiment 5,
Etching solution comprises the moiety of following weight percent: hydrogen fluoride pyridine salt 10%, sulfuric acid 50%, EDTA2%, pure water 38%.The various materials of aforementioned proportion are at room temperature stirred obtain etching solution provided by the invention.
Under 25～30 ℃, etch-rate is 10 microns/minute, and the thickness heterogeneity of glass substrate is less than 1% after the etching, and being equipped with has micro-white flocculent substance to produce in the container of etching solution, remove easily.
Embodiment 6,
Etching solution comprises the moiety of following weight percent: hydrogen fluoride pyridine salt 10%, sulfuric acid 30%, EDTA5%, pure water 55%.The various materials of aforementioned proportion are at room temperature stirred obtain etching solution provided by the invention.
Under 25～30 ℃, etch-rate is 5 microns/minute, and the thickness heterogeneity of glass substrate is less than 1% after the etching, and being equipped with has micro-white flocculent substance to produce in the container of etching solution, remove easily.
Embodiment 7,
Etching solution comprises the moiety of following weight percent: hydrogen fluoride pyridine salt 10%, sulfuric acid 50%, EDTA5%, pure water 35%.The various materials of aforementioned proportion are at room temperature stirred obtain etching solution provided by the invention.
Under 25～30 ℃, etch-rate is 10 microns/minute, and the thickness heterogeneity of glass substrate is less than 1% after the etching, and being equipped with does not have micro-white flocculent substance to produce substantially in the container of etching solution.
Embodiment 8,
Etching solution comprises the moiety of following weight percent: hydrogen fluoride pyridine salt 15%, sulfuric acid 30%, EDTA0.5%, pure water 54.5%.The various materials of aforementioned proportion are at room temperature stirred obtain etching solution provided by the invention.
Under 25～30 ℃, etch-rate is 3 microns/minute, and the thickness heterogeneity of glass substrate is less than 1% after the etching, and being equipped with has a small amount of white flocculent substance to produce in the container of etching solution, remove easily.
Embodiment 9,
Etching solution comprises the moiety of following weight percent: hydrogen fluoride pyridine salt 15%, sulfuric acid 50%, EDTA0.5%, pure water 34.5%.The various materials of aforementioned proportion are at room temperature stirred obtain etching solution provided by the invention.
Embodiment 10,
Etching solution comprises the moiety of following weight percent: hydrogen fluoride pyridine salt 15%, sulfuric acid 30%, EDTA5%, pure water 50%.The various materials of aforementioned proportion are at room temperature stirred obtain etching solution provided by the invention.
Under 25～30 ℃, etch-rate is 3.5 microns/minute, and the thickness heterogeneity of glass substrate is less than 1% after the etching, and being equipped with has micro-white flocculent substance to produce in the container of etching solution, remove easily.
Embodiment 11,
Etching solution comprises the moiety of following weight percent: hydrogen fluoride pyridine salt 20%, sulfuric acid 30%, EDTA0.5%, pure water 29.5%.The various materials of aforementioned proportion are at room temperature stirred obtain etching solution provided by the invention.
Under 25～30 ℃, etch-rate is 8 microns/minute, and the thickness heterogeneity of glass substrate is less than 1% after the etching, and being equipped with has micro-white flocculent substance to produce in the container of etching solution, remove easily.
Embodiment 12,
Etching solution comprises the moiety of following weight percent: hydrogen fluoride pyridine salt 20%, sulfuric acid 50%, EDTA0.5%, pure water 29.5%.The various materials of aforementioned proportion are at room temperature stirred obtain etching solution provided by the invention.
Under 25～30 ℃, etch-rate is 12 microns/minute, and the thickness heterogeneity of glass substrate is equipped with less than 1% that no white flocculent substance produces in the container of etching solution after the etching.
Embodiment 13,
Etching solution comprises the moiety of following weight percent: hydrogen fluoride pyridine salt 10%, sulfuric acid 20%, phosphatase 11 0%, EDTA0.5%, pure water 59.5%.The various materials of aforementioned proportion are at room temperature stirred obtain etching solution provided by the invention.
Under 25～30 ℃, etch-rate is 2 microns/minute, and the thickness heterogeneity of glass substrate is less than 1% after the etching, and being equipped with has a small amount of white flocculent substance to produce in the container of etching solution, remove easily.
Embodiment 14,
Etching solution comprises the moiety of following weight percent: hydrogen fluoride pyridine salt 10%, sulfuric acid 20%, phosphoric acid 20%, EDTA0.5%, pure water 49.5%.The various materials of aforementioned proportion are at room temperature stirred obtain etching solution provided by the invention.
Under 25～30 ℃, etch-rate is 5 microns/minute, and the thickness heterogeneity of glass substrate is less than 1% after the etching, and being equipped with has a small amount of white flocculent substance to produce in the container of etching solution, remove easily.
Embodiment 15,
Etching solution comprises the moiety of following weight percent: hydrogen fluoride pyridine salt 10%, sulfuric acid 20%, phosphoric acid 30%, EDTA0.5%, pure water 39.5%.The various materials of aforementioned proportion are at room temperature stirred obtain etching solution provided by the invention.
Under 25～30 ℃, etch-rate is 9 microns/minute, and the thickness heterogeneity of glass substrate is less than 1% after the etching, and being equipped with has a small amount of white flocculent substance to produce in the container of etching solution, remove easily.
Embodiment 16,
Etching solution comprises the moiety of following weight percent: hydrogen fluoride pyridine salt 10%, sulfuric acid 20%, phosphatase 11 0%, EDTA5%, pure water 55%.The various materials of aforementioned proportion are at room temperature stirred obtain etching solution provided by the invention.
Under 25～30 ℃, etch-rate is 2.5 microns/minute, and the thickness heterogeneity of glass substrate is less than 1% after the etching, and being equipped with has micro-white flocculent substance to produce in the container of etching solution, remove easily.
Embodiment 17,
Etching solution comprises the moiety of following weight percent: hydrogen fluoride pyridine salt 10%, sulfuric acid 20%, phosphoric acid 30%, EDTA5%, pure water 35%.The various materials of aforementioned proportion are at room temperature stirred obtain etching solution provided by the invention.
Under 25～30 ℃, etch-rate is 10 microns/minute, and the thickness heterogeneity of glass substrate is equipped with less than 1% that no white flocculent substance produces in the container of etching solution after the etching.
Embodiment 18,
Etching solution comprises the moiety of following weight percent: hydrogen fluoride pyridine salt 10%, sulfuric acid 40%, phosphatase 11 0%, EDTA5%, pure water 35%.The various materials of aforementioned proportion are at room temperature stirred obtain etching solution provided by the invention.
Under 25～30 ℃, etch-rate is 11 microns/minute, and the thickness heterogeneity of glass substrate is equipped with less than 1% that no white flocculent substance produces in the container of etching solution after the etching.
Embodiment 19,
Etching solution comprises the moiety of following weight percent: hydrogen fluoride pyridine salt 15%, sulfuric acid 20%, phosphatase 11 0%, EDTA5%, pure water 50%.The various materials of aforementioned proportion are at room temperature stirred obtain etching solution provided by the invention.
Under 25～30 ℃, etch-rate is 5 microns/minute, and the thickness heterogeneity of glass substrate is less than 1% after the etching, and being equipped with has micro-white flocculent substance to produce in the container of etching solution, remove easily.
Embodiment 20,
Etching solution comprises the moiety of following weight percent: hydrogen fluoride pyridine salt 20%, sulfuric acid 20%, phosphatase 11 0%, EDTA5%, pure water 45%.The various materials of aforementioned proportion are at room temperature stirred obtain etching solution provided by the invention.
Under 25～30 ℃, etch-rate is 9 microns/minute, and the thickness heterogeneity of glass substrate is equipped with and has or not white flocculent substance to produce in the container of etching solution less than 1% after the etching.
Embodiment 21,
Etching solution comprises the moiety of following weight percent: hydrogen fluoride pyridine salt 20%, sulfuric acid 20%, phosphoric acid 30%, EDTA5%, pure water 25%.The various materials of aforementioned proportion are at room temperature stirred obtain etching solution provided by the invention.
Under 25～30 ℃, etch-rate is 14 microns/minute, and the thickness heterogeneity of glass substrate is equipped with less than 1% that no white flocculent substance produces in the container of etching solution after the etching.
Above embodiment is the attenuation etching liquid of using as glass substrate with the TFT glass substrate, in addition, this glass substrate also comprises liquid-crystal display (LCD) (specifically comprising twisted nematic (TN), super-twist nematic (STN) and colorful ultra-twist nematic (CSTN)), touch-screen (TP), organic electroluminescent (OLED) and plasma body (PDP) demonstration glass substrate.
Claims (10)
1. a sheet glass etching solution is made up of hydrogen fluoride pyridine salt, strong acid, water and ethylenediamine tetraacetic acid (EDTA); The per-cent that described hydrogen fluoride pyridine salt, strong acid and ethylenediamine tetraacetic acid (EDTA) account for described sheet glass etching solution gross weight is respectively: 10-20%, 30-70% and 0.5-5%, surplus is a water.
2. etching solution according to claim 1 is characterized in that: the structural formula of described hydrogen fluoride pyridine salt is
3. etching solution according to claim 1 and 2 is characterized in that: described etching solution be selected from following etching solution 1 '-26 ' in any one:
The etching solution of forming by the water of the ethylenediamine tetraacetic acid (EDTA) of the strong acid of the hydrogen fluoride pyridine salt of 10-20 weight part, 30-50 weight part, 0.5-5 weight part and 25-59.5 weight part 1 ';
The etching solution of forming by the water of the ethylenediamine tetraacetic acid (EDTA) of the strong acid of the hydrogen fluoride pyridine salt of 10-15 weight part, 30-50 weight part, 0.5-5 weight part and 34.5-59.5 weight part 2 ';
The etching solution of forming by the water of the ethylenediamine tetraacetic acid (EDTA) of the strong acid of the hydrogen fluoride pyridine salt of 15-20 weight part, 30-50 weight part, 0.5-5 weight part and 25-54.5 weight part 3 ';
The etching solution of forming by the water of the ethylenediamine tetraacetic acid (EDTA) of the strong acid of the hydrogen fluoride pyridine salt of 10-20 weight part, 30-40 weight part, 0.5-5 weight part and 25-59.5 weight part 4 ';
The etching solution of forming by the water of the ethylenediamine tetraacetic acid (EDTA) of the strong acid of the hydrogen fluoride pyridine salt of 10-15 weight part, 30-40 weight part, 0.5-5 weight part and 34.5-59.5 weight part 5 ';
The etching solution of forming by the water of the ethylenediamine tetraacetic acid (EDTA) of the sulfuric acid of the hydrogen fluoride pyridine salt of 10 weight parts, 30 weight parts, 0.5 weight part and 59.5 weight parts 6 ';
The etching solution of forming by the water of the ethylenediamine tetraacetic acid (EDTA) of the sulfuric acid of the hydrogen fluoride pyridine salt of 10 weight parts, 40 weight parts, 0.5 weight part and 49.5 weight parts 7 ';
The etching solution of forming by the water of the ethylenediamine tetraacetic acid (EDTA) of the sulfuric acid of the hydrogen fluoride pyridine salt of 10 weight parts, 50 weight parts, 0.5 weight part and 39.5 weight parts 8 ';
The etching solution of forming by the water of the ethylenediamine tetraacetic acid (EDTA) of the sulfuric acid of the hydrogen fluoride pyridine salt of 10 weight parts, 30 weight parts, 2 weight parts and 58 weight parts 9 ';
The etching solution of forming by the water of the ethylenediamine tetraacetic acid (EDTA) of the sulfuric acid of the hydrogen fluoride pyridine salt of 10 weight parts, 50 weight parts, 2 weight parts and 38 weight parts 10 ';
The etching solution of forming by the water of the ethylenediamine tetraacetic acid (EDTA) of the sulfuric acid of the hydrogen fluoride pyridine salt of 10 weight parts, 30 weight parts, 5 weight parts and 55 weight parts 11 ';
The etching solution of forming by the water of the ethylenediamine tetraacetic acid (EDTA) of the sulfuric acid of the hydrogen fluoride pyridine salt of 10 weight parts, 50 weight parts, 5 weight parts and 35 weight parts 12 ';
The etching solution of forming by the water of the ethylenediamine tetraacetic acid (EDTA) of the sulfuric acid of the hydrogen fluoride pyridine salt of 15 weight parts, 30 weight parts, 0.5 weight part and 54.5 weight parts 13 ';
The etching solution of forming by the water of the ethylenediamine tetraacetic acid (EDTA) of the sulfuric acid of the hydrogen fluoride pyridine salt of 15 weight parts, 50 weight parts, 0.5 weight part and 34.5 weight parts 14 ';
The etching solution of forming by the water of the ethylenediamine tetraacetic acid (EDTA) of the sulfuric acid of the hydrogen fluoride pyridine salt of 15 weight parts, 30 weight parts, 5 weight parts and 50 weight parts 15 ';
The etching solution of forming by the water of the ethylenediamine tetraacetic acid (EDTA) of the sulfuric acid of the hydrogen fluoride pyridine salt of 20 weight parts, 30 weight parts, 0.5 weight part and 29.5 weight parts 16 ';
The etching solution of forming by the water of the ethylenediamine tetraacetic acid (EDTA) of the sulfuric acid of the hydrogen fluoride pyridine salt of 20 weight parts, 50 weight parts, 0.5 weight part and 29.5 weight parts 17 ';
The etching solution of forming by the water of the ethylenediamine tetraacetic acid (EDTA) of the phosphoric acid of the sulfuric acid of the hydrogen fluoride pyridine salt of 10 weight parts, 20 weight parts, 10 weight parts, 0.5 weight part and 59.5 weight parts 18 ';
The etching solution of forming by the water of the ethylenediamine tetraacetic acid (EDTA) of the phosphoric acid of the sulfuric acid of the hydrogen fluoride pyridine salt of 10 weight parts, 20 weight parts, 20 weight parts, 0.5 weight part and 49.5 weight parts 19 ';
The etching solution of forming by the water of the ethylenediamine tetraacetic acid (EDTA) of the phosphoric acid of the sulfuric acid of the hydrogen fluoride pyridine salt of 10 weight parts, 20 weight parts, 30 weight parts, 0.5 weight part and 39.5 weight parts 20 ';
The etching solution of forming by the water of the ethylenediamine tetraacetic acid (EDTA) of the phosphoric acid of the sulfuric acid of the hydrogen fluoride pyridine salt of 10 weight parts, 20 weight parts, 10 weight parts, 5 weight parts and 55 weight parts 21 ';
The etching solution of forming by the water of the ethylenediamine tetraacetic acid (EDTA) of the phosphoric acid of the sulfuric acid of the hydrogen fluoride pyridine salt of 10 weight parts, 20 weight parts, 30 weight parts, 5 weight parts and 35 weight parts 22 ';
The etching solution of forming by the water of the ethylenediamine tetraacetic acid (EDTA) of the phosphoric acid of the sulfuric acid of the hydrogen fluoride pyridine salt of 10 weight parts, 40 weight parts, 10 weight parts, 5 weight parts and 35 weight parts 23 ';
The etching solution of forming by the water of the ethylenediamine tetraacetic acid (EDTA) of the phosphoric acid of the sulfuric acid of the hydrogen fluoride pyridine salt of 15 weight parts, 20 weight parts, 10 weight parts, 5 weight parts and 50 weight parts 24 ';
The etching solution of forming by the water of the ethylenediamine tetraacetic acid (EDTA) of the phosphoric acid of the sulfuric acid of the hydrogen fluoride pyridine salt of 20 weight parts, 20 weight parts, 10 weight parts, 5 weight parts and 45 weight parts 25 ';
The etching solution of forming by the water of the ethylenediamine tetraacetic acid (EDTA) of the phosphoric acid of the sulfuric acid of the hydrogen fluoride pyridine salt of 20 weight parts, 20 weight parts, 30 weight parts, 5 weight parts and 25 weight parts 26 '.
4. according to the arbitrary described etching solution of claim 1-3, it is characterized in that: described strong acid is selected from least a in sulfuric acid and the phosphoric acid;
When described strong acid was the mixture of sulfuric acid and phosphoric acid, in per 100 parts of described etching solutions, the mixture of sulfuric acid and phosphoric acid was selected from any one among the following mixture a-mixture f:
The mixture a that forms by the phosphoric acid of the sulfuric acid of 20 weight parts and 10 weight parts;
The mixture b that forms by the phosphoric acid of the sulfuric acid of 30 weight parts and 20 weight parts;
The mixture c that forms by the phosphoric acid of the sulfuric acid of 40 weight parts and 30 weight parts;
The mixture d that forms by the phosphoric acid of the sulfuric acid of 20-30 weight part and 10-20 weight part;
The Mischung of forming by the phosphoric acid of the sulfuric acid of 20-40 weight part and 10-30 weight part;
The mixture f that forms by the phosphoric acid of the sulfuric acid of 30-40 weight part and 20-30 weight part.
5. according to the arbitrary described etching solution of claim 1-4, it is characterized in that: described sheet glass etching solution is to get according to the arbitrary described method preparation of claim 6-9.
6. method for preparing the arbitrary described sheet glass etching solution of claim 1-5, be with hydrogen fluoride pyridine salt, strong acid, water and ethylenediamine tetraacetic acid (EDTA) at 20～30 ℃ of mixings, obtain described sheet glass etching solution;
The per-cent that described hydrogen fluoride pyridine salt, strong acid and ethylenediamine tetraacetic acid (EDTA) account for described sheet glass etching solution gross weight is respectively: 10-20%, 30-70% and 0.5-5%, surplus is a water.
7. method according to claim 6 is characterized in that: the structural formula of described hydrogen fluoride pyridine salt is
8. according to claim 6 or 7 described methods, it is characterized in that: in the described etching solution weight part of each component be selected from following component 1 '-component 26 ' in any one:
Component 1 ': the ethylenediamine tetraacetic acid (EDTA) of the hydrogen fluoride pyridine salt of 10-20 weight part, the strong acid of 30-50 weight part, 0.5-5 weight part and the water of 25-59.5 weight part;
Component 2 ': the ethylenediamine tetraacetic acid (EDTA) of the hydrogen fluoride pyridine salt of 10-15 weight part, the strong acid of 30-50 weight part, 0.5-5 weight part and the water of 34.5-59.5 weight part;
Component 3 ': the ethylenediamine tetraacetic acid (EDTA) of the hydrogen fluoride pyridine salt of 15-20 weight part, the strong acid of 30-50 weight part, 0.5-5 weight part and the water of 25-54.5 weight part;
Component 4 ': the ethylenediamine tetraacetic acid (EDTA) of the hydrogen fluoride pyridine salt of 10-20 weight part, the strong acid of 30-40 weight part, 0.5-5 weight part and the water of 25-59.5 weight part;
Component 5 ': the ethylenediamine tetraacetic acid (EDTA) of the hydrogen fluoride pyridine salt of 10-15 weight part, the strong acid of 30-40 weight part, 0.5-5 weight part and the water of 34.5-59.5 weight part;
Component 6 ': the ethylenediamine tetraacetic acid (EDTA) of the hydrogen fluoride pyridine salt of 10 weight parts, the sulfuric acid of 30 weight parts, 0.5 weight part and the water of 59.5 weight parts;
Component 7 ': the ethylenediamine tetraacetic acid (EDTA) of the hydrogen fluoride pyridine salt of 10 weight parts, the sulfuric acid of 40 weight parts, 0.5 weight part and the water of 49.5 weight parts;
Component 8 ': the ethylenediamine tetraacetic acid (EDTA) of the hydrogen fluoride pyridine salt of 10 weight parts, the sulfuric acid of 50 weight parts, 0.5 weight part and the water of 39.5 weight parts;
Component 9 ': the ethylenediamine tetraacetic acid (EDTA) of the hydrogen fluoride pyridine salt of 10 weight parts, the sulfuric acid of 30 weight parts, 2 weight parts and the water of 58 weight parts;
Component 10 ': the ethylenediamine tetraacetic acid (EDTA) of the hydrogen fluoride pyridine salt of 10 weight parts, the sulfuric acid of 50 weight parts, 2 weight parts and the water of 38 weight parts;
Component 11 ': the ethylenediamine tetraacetic acid (EDTA) of the hydrogen fluoride pyridine salt of 10 weight parts, the sulfuric acid of 30 weight parts, 5 weight parts and the water of 55 weight parts;
Component 12 ': the ethylenediamine tetraacetic acid (EDTA) of the hydrogen fluoride pyridine salt of 10 weight parts, the sulfuric acid of 50 weight parts, 5 weight parts and the water of 35 weight parts;
Component 13 ': the ethylenediamine tetraacetic acid (EDTA) of the hydrogen fluoride pyridine salt of 15 weight parts, the sulfuric acid of 30 weight parts, 0.5 weight part and the water of 54.5 weight parts;
Component 14 ': the ethylenediamine tetraacetic acid (EDTA) of the hydrogen fluoride pyridine salt of 15 weight parts, the sulfuric acid of 50 weight parts, 0.5 weight part and the water of 34.5 weight parts;
Component 15 ': the ethylenediamine tetraacetic acid (EDTA) of the hydrogen fluoride pyridine salt of 15 weight parts, the sulfuric acid of 30 weight parts, 5 weight parts and the water of 50 weight parts;
Component 16 ': the ethylenediamine tetraacetic acid (EDTA) of the hydrogen fluoride pyridine salt of 20 weight parts, the sulfuric acid of 30 weight parts, 0.5 weight part and the water of 29.5 weight parts;
Component 17 ': the ethylenediamine tetraacetic acid (EDTA) of the hydrogen fluoride pyridine salt of 20 weight parts, the sulfuric acid of 50 weight parts, 0.5 weight part and the water of 29.5 weight parts;
Component 18 ': the phosphoric acid of the hydrogen fluoride pyridine salt of 10 weight parts, the sulfuric acid of 20 weight parts, 10 weight parts, the ethylenediamine tetraacetic acid (EDTA) of 0.5 weight part and the water of 59.5 weight parts;
Component 19 ': the phosphoric acid of the hydrogen fluoride pyridine salt of 10 weight parts, the sulfuric acid of 20 weight parts, 20 weight parts, the ethylenediamine tetraacetic acid (EDTA) of 0.5 weight part and the water of 49.5 weight parts;
Component 20 ': the phosphoric acid of the hydrogen fluoride pyridine salt of 10 weight parts, the sulfuric acid of 20 weight parts, 30 weight parts, the ethylenediamine tetraacetic acid (EDTA) of 0.5 weight part and the water of 39.5 weight parts;
Component 21 ': the phosphoric acid of the hydrogen fluoride pyridine salt of 10 weight parts, the sulfuric acid of 20 weight parts, 10 weight parts, the ethylenediamine tetraacetic acid (EDTA) of 5 weight parts and the water of 55 weight parts;
Component 22 ': the phosphoric acid of the hydrogen fluoride pyridine salt of 10 weight parts, the sulfuric acid of 20 weight parts, 30 weight parts, the ethylenediamine tetraacetic acid (EDTA) of 5 weight parts and the water of 35 weight parts;
Component 23 ': the phosphoric acid of the hydrogen fluoride pyridine salt of 10 weight parts, the sulfuric acid of 40 weight parts, 10 weight parts, the ethylenediamine tetraacetic acid (EDTA) of 5 weight parts and the water of 35 weight parts;
Component 24 ': the phosphoric acid of the hydrogen fluoride pyridine salt of 15 weight parts, the sulfuric acid of 20 weight parts, 10 weight parts, the ethylenediamine tetraacetic acid (EDTA) of 5 weight parts and the water of 50 weight parts;
Component 25 ': the phosphoric acid of the hydrogen fluoride pyridine salt of 20 weight parts, the sulfuric acid of 20 weight parts, 10 weight parts, the ethylenediamine tetraacetic acid (EDTA) of 5 weight parts and the water of 45 weight parts;
Component 26 ': the phosphoric acid of the hydrogen fluoride pyridine salt of 20 weight parts, the sulfuric acid of 20 weight parts, 30 weight parts, the ethylenediamine tetraacetic acid (EDTA) of 5 weight parts and the water of 25 weight parts.
9. according to the arbitrary described method of claim 6-8, it is characterized in that: described strong acid is selected from least a in sulfuric acid and the phosphoric acid;
When described strong acid was the mixture of sulfuric acid and phosphoric acid, in per 100 parts of described etching solutions, the mixture of sulfuric acid and phosphoric acid was selected from any one among the following mixture a-mixture f:
The mixture a that forms by the phosphoric acid of the sulfuric acid of 20 weight parts and 10 weight parts;
The mixture b that forms by the phosphoric acid of the sulfuric acid of 30 weight parts and 20 weight parts;
The mixture c that forms by the phosphoric acid of the sulfuric acid of 40 weight parts and 30 weight parts;
The mixture d that forms by the phosphoric acid of the sulfuric acid of 20-30 weight part and 10-20 weight part;
The Mischung of forming by the phosphoric acid of the sulfuric acid of 20-40 weight part and 10-30 weight part;
The mixture f that forms by the phosphoric acid of the sulfuric acid of 30-40 weight part and 20-30 weight part.
10. the application of the arbitrary described sheet glass etching solution of claim 1-5 in preparation sheet glass attenuate usefulness etching solution.
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| CN2010101091194A CN101774767B (en) | 2010-02-08 | 2010-02-08 | Glass substrate etching solution for flat display |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105060727A (en) * | 2015-07-31 | 2015-11-18 | 安徽和润特种玻璃有限公司 | Etching solution for high-transmittance anti-dazzle glass, and preparation method thereof |
| CN106587648A (en) * | 2016-12-31 | 2017-04-26 | 庞绮琪 | TFT glass substrate surface pretreatment composition |
| WO2020181847A1 (en) * | 2019-03-14 | 2020-09-17 | 惠州市清洋实业有限公司 | Mobile phone lens etching solution, preparation method and application method |
| CN112852429A (en) * | 2021-01-08 | 2021-05-28 | 绵阳艾萨斯电子材料有限公司 | Silver metal thin film layer etching solution and preparation and application thereof |
| CN115960609A (en) * | 2022-12-30 | 2023-04-14 | 浙江奥首材料科技有限公司 | Etching solution for etching oxide layer on surface of wafer with high selectivity, preparation method and application thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101215099B (en) * | 2008-01-16 | 2011-02-02 | 京东方科技集团股份有限公司 | Flat glass substrate attenuation etching liquid |
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2010
- 2010-02-08 CN CN2010101091194A patent/CN101774767B/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105060727A (en) * | 2015-07-31 | 2015-11-18 | 安徽和润特种玻璃有限公司 | Etching solution for high-transmittance anti-dazzle glass, and preparation method thereof |
| CN105060727B (en) * | 2015-07-31 | 2018-03-02 | 安徽和润特种玻璃有限公司 | A kind of high transmittance anti-dazzle glas etching solution and preparation method thereof |
| CN106587648A (en) * | 2016-12-31 | 2017-04-26 | 庞绮琪 | TFT glass substrate surface pretreatment composition |
| CN106587648B (en) * | 2016-12-31 | 2018-12-21 | 江苏聚泰科技有限公司 | A kind of TFT glass baseplate surface pretreatment compositions |
| WO2020181847A1 (en) * | 2019-03-14 | 2020-09-17 | 惠州市清洋实业有限公司 | Mobile phone lens etching solution, preparation method and application method |
| CN112852429A (en) * | 2021-01-08 | 2021-05-28 | 绵阳艾萨斯电子材料有限公司 | Silver metal thin film layer etching solution and preparation and application thereof |
| CN115960609A (en) * | 2022-12-30 | 2023-04-14 | 浙江奥首材料科技有限公司 | Etching solution for etching oxide layer on surface of wafer with high selectivity, preparation method and application thereof |
| CN115960609B (en) * | 2022-12-30 | 2023-10-24 | 浙江奥首材料科技有限公司 | Etching solution for etching oxide layer on surface of wafer with high selectivity, preparation method and application thereof |
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| CN101774767B (en) | 2012-08-22 |
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