CN101771031B - Photoelectric element-packaging structure with electrostatic protection function - Google Patents
Photoelectric element-packaging structure with electrostatic protection function Download PDFInfo
- Publication number
- CN101771031B CN101771031B CN2008101876597A CN200810187659A CN101771031B CN 101771031 B CN101771031 B CN 101771031B CN 2008101876597 A CN2008101876597 A CN 2008101876597A CN 200810187659 A CN200810187659 A CN 200810187659A CN 101771031 B CN101771031 B CN 101771031B
- Authority
- CN
- China
- Prior art keywords
- nude film
- electrostatic protection
- electrode part
- light
- film holder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
- H01L2224/05554—Shape in top view being square
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Led Device Packages (AREA)
Abstract
The invention discloses a photoelectric element-packaging structure with an electrostatic protection function, which comprises a shell, a lead frame, a light-emitting diode, a Zener diode and a sealing layer. The lead frame is inserted in the shell, and comprises a first electrode part and a second electrode part. The first electrode part comprises a first fixed bare sheet seat and a second fixed bare sheet seat, and the second fixed bare sheet seat is lower than the first fixed bare sheet seat and the second electrode part. The light-emitting diode is fixed on the first fixed bare sheet seat, and the Zener diode is fixed on the second fixed bare sheet seat. The sealing layer is filled in the shell, and covers the light-emitting diode and the Zener diode. The invention increases the light-emitting efficiency of a photoelectric element, the packaging size of the photoelectric element is reduced, and the difficulty of the wire-soldering technique is decreased.
Description
Technical field
The present invention relates to a kind of photoelectric element-packaging structure, relate to especially and have the light-emitting diode that electrostatic protection diode is arranged or the potted element of photodiode with electrostatic protection.
Background technology
Because light-emitting diode (light emitting diode; LED) element has that volume is little, luminous efficiency is high and advantage such as the life-span is long, therefore is considered to time best light source of green energy conservation illumination from generation to generation.The fashion trend of the fast-developing and full-color screen of LCD in addition, make the white light emitting diode element except being applied to purposes such as indicator light and large display screen, more cut vast consumption electronic products, for example: mobile phone and PDA(Personal Digital Assistant).
The white light emitting diode element mostly is the nude film of encapsulation gallium nitride blue LED and makes at present, right gallium nitride blue diode or InGaN blue green light diode are because its P/N knot (junction) very near the surface, therefore is easy to be subjected to the destruction of static.Particularly under the environment of drying, human body with static may just be accumulate to 1～2 kilovolt.If the human body of static electrification touches the pin of light-emitting diode accidentally, can destroy the circuit of light-emitting diode even electric current is little.
For addressing the above problem, known technology is with a Zener diode in parallel (Zener diode) in the light-emitting diode, protects the light-emitting diode nude film to avoid suffering the destruction of static.Fig. 1 is the circuit diagram of light-emitting diode protection in parallel crystal in the typical light-emitting diode.Under light-emitting diode 10 normal operating voltage Vcc, light-emitting diode 11 is in along bias voltage (forward bias), for example: 5 volts operating voltage; And Zener diode 12 is in reverse blas (reverse bias), and the puncture voltage of general Zener diode 12 is about 8 volts.Therefore, when light-emitting diode 10 was applied in normal operating voltage, Zener diode 12 can't conducting because not reaching puncture voltage.But if because human body when being imported the pin of light-emitting diode 10 carelessly up to 1～2 kilovolt of static; will make light-emitting diode 11 and Zener diode 12 all be in the state of conducting; but nearly all electric current all can pass through Zener diode 12, thereby the circuit of protection light-emitting diode 11 is not destroyed.
In order to finish the parallel circuits of above-mentioned light-emitting diode, there is various known technology to go to realize, its shortcoming is separately so all arranged.Fig. 2 is the 6th, 054, No. 716 disclosed light-emitting diode profiles of patent of the U.S..Light-emitting diode 20 comprises a light-emitting diode 21 that is fixed in the lamp socket bottom 231 of anodal support 23, and other comprises a Zener diode 22 that is fixed in lamp socket top 232.The N type electrode 221 of Zener diode 22 is electrical connected via crystal-bonding adhesive 25 and lamp socket top 232, and 222 at its P type electrode is electrical connected by plain conductor 26 and negative pole support 24.The P type electrode 212 of light-emitting diode 21 is electrical connected by plain conductor 26 and anodal support 23, and 211 P type electrodes 222 by plain conductor 26 and Zener diode 22 of its N type electrode are electrical connected.
Above-mentioned light-emitting diode 20 is a kind of stitch encapsulating structure, and not only difficulty is higher on the technology, and stitch need cooperate with the circuit board with perforation, therefore can reduce the wiring density of this circuit board.
Fig. 3 sticks together the profile of the light-emitting diode of formula for known surface.Light-emitting diode 30 comprises lead frame 38, a light-emitting diode 31 and the Zener diode 32 that a housing 37, is arranged in housing 37, and lead frame 38 comprises a N type electrode part 33 and a P type electrode part 34 that is positioned at equal height again.Light-emitting diode 31 and Zener diode 32 are for being fixed on N type electrode part 33 and the P type electrode part 34 by crystal-bonding adhesive 35 respectively.The N type electrode of light-emitting diode 31 is electrical connected by plain conductor 36 and N type electrode part 33, and its P type electrode is electrical connected by plain conductor 36 and P type electrode part 34.The N type electrode of Zener diode 32 is for being electrical connected by plain conductor 36 and N type electrode part 33.
One envelope is ended layer 39 and is filled in the housing 37, and the light transmission that light-emitting diode 31 is sent.Because light-emitting diode 31 and Zener diode 32 are positioned at sustained height, so the light that light-emitting diode 31 sends can or block by Zener diode 32 influences on next door.Especially Zener diode 32 has the effect of absorption near black for light, crosses the light that envelope is ended layer 39 thereby reduce transmission.In addition, plain conductor 36 is finished with bonding wire (wire bonding) technology, therefore needs to produce the state space of plain conductor 36 shapes.But because light-emitting diode 31 and Zener diode 32 are positioned at sustained height, so cause the bonding wire craft space to be limited to.
Summary of the invention
The invention provides a kind of photoelectric element-packaging structure, by the electrostatic protection nude film is fixed in the recess of lead frame, and make the luminous efficiency of photoelectric cell promote with electrostatic protection.
The invention provides a kind of photoelectric element-packaging structure with electrostatic protection, wherein the fixed position of photodiode and electrostatic protection nude film can optimization, thereby makes the package dimension of photoelectric cell to dwindle.
The invention provides a kind of photoelectric element-packaging structure that reduces the bonding wire craft restriction; by photodiode and electrostatic protection nude film being fixed in the differing heights place of lead frame; and make that the formation Linear Space of bonding wire craft is bigger, thereby reduce the degree of difficulty of bonding wire craft.
For reaching above-mentioned purpose, the present invention discloses a kind of photoelectric element-packaging structure with electrostatic protection, and it comprises a housing, a lead frame, a photodiode, an electrostatic protection nude film and an envelope and ends layer.This lead frame is arranged in this housing, and comprises one first electrode part and one second electrode part.This first electrode part comprises one first nude film holder and one second nude film holder in addition, and this second nude film holder is lower than this first nude film holder and this second electrode part.This photodiode is fixed in this first nude film holder, and this electrostatic protection nude film is fixed in this second nude film holder again.This envelope is ended layer and is filled in this housing, and covers this photodiode and this electrostatic protection nude film.
This photodiode is a light-emitting diode or photodiode, again this electrostatic protection nude film nude film that is a Zener diode.
This first electrode part comprises a linking arm that bends in addition downwards, and this first nude film holder and this second nude film holder interconnect by this linking arm.
This photoelectric cell comprises a plurality of plain conductors in addition, and described a plurality of plain conductors electrically connect this photodiode and this electrostatic protection nude film.
This photoelectric cell comprises in addition allows that light wears the light-emitting area of penetrating, wherein this second nude film holder compared to this first nude film holder away from this light-emitting area.
This second electrode part comprises a wire welding area, in addition and is embedded in the linking arm that the interior base portion of this housing and connects this wire welding area and this base portion, and wherein this wire welding area extends to the centre of this first nude film holder and this second nude film holder from this linking arm.This photoelectric cell comprises a plurality of plain conductors in addition, and described a plurality of plain conductors electrically connect this photodiode and this electrostatic protection nude film via this wire welding area.
The polarity of this first electrode part be N type electrode and P type electrode one of them, the polarity of this second electrode part then is one of other relatively.
The invention enables the luminous efficiency of photoelectric cell to promote, the package dimension of photoelectric cell dwindles, and reduces the degree of difficulty of bonding wire craft.
Description of drawings
Fig. 1 is the circuit diagram of light-emitting diode protection in parallel crystal in the typical light-emitting diode;
Fig. 2 is the 6th, 054, No. 716 disclosed light-emitting diode profiles of patent of the U.S.;
Fig. 3 sticks together the profile of the light-emitting diode of formula for known surface;
Fig. 4 has the profile of the photoelectric cell of electrostatic protection for the present invention; And
Fig. 5 has the vertical view of the photoelectric cell of electrostatic protection for another enforcement of the present invention.
Description of reference numerals in the above-mentioned accompanying drawing is as follows:
10 light-emitting diodes, 11 light-emitting diodes
12 Zener diodes, 20 light-emitting diodes
21 light-emitting diodes, 22 Zener diodes
23 anodal support 24 negative pole supports
25 crystal-bonding adhesives, 26 plain conductors
30 light-emitting diodes, 31 light-emitting diodes
32 Zener diode 33N type electrode part
34P type electrode part 35 crystal-bonding adhesives
36 plain conductors, 37 housings
38 lead frames, 39 envelopes are ended layer
40,40 ' photoelectric cell, 41 photodiodes
42 electrostatic protection nude films, 43,43 ' the first electrode part
44,44 ' the second electrode part, 45 crystal-bonding adhesives
47 housings 48,48 ' lead frame
49 envelopes are ended layer 4a light-emitting area
211,221N type electrode 212,222P type electrode
232 lamp socket tops, 231 lamp sockets bottom
411,421 first electrodes, 412,422 second electrodes
461～463 plain conductors
431,431 ' the first nude film holders
432,432 ' the second nude film holders
433,433 ' linking arm, 442 ' wire welding area
443 ' base portion
Embodiment
Fig. 4 has the profile of the photoelectric cell of electrostatic protection for the present invention.Photoelectric cell 40 comprises lead frame 48, a photodiode 41 and the electrostatic protection nude film 42 that a housing 47, is arranged in housing 47, and lead frame 48 comprises one first electrode part 43 and one second electrode part 44 again.Photodiode 41 is fixed in by crystal-bonding adhesive 45 on the first nude film holder 431 of first electrode part 43, and similarly second electrode 421 of electrostatic protection nude film 42 is fixed on the second nude film holder 432 by crystal-bonding adhesive 45.The first nude film holder 431 and the second nude film holder 432 by one downwards the linking arm 433 of bending interconnect, therefore the second nude film holder 432 compared to the first nude film holder 431 and second electrode part 44 away from light-emitting area 4a.First electrode 411 of photodiode 41 is electrical connected by the plain conductor 461 and first electrode part 43, and its second electrode 412 is electrical connected by the plain conductor 462 and second electrode part 44.422 at second electrode of electrostatic protection nude film 42 is electrical connected by the plain conductor 463 and second electrode part 44.One envelope is ended layer 49 and is filled in the housing 47, and the light transmission that photodiode 41 is sent, and perhaps allows extraneous light penetrate and is radiated at photodiode 41 surfaces.
Photodiode 41 can be light-emitting diode or photodiode, and electrostatic protection nude film 42 is the nude film of Zener diode again.Aforementioned first electrode N type electrode and P type electrode wherein one, the second electrodes then are other relatively one.
Because the position of electrostatic protection nude film 42 is low than the position of photodiode 41, so the light that photodiode 41 sends can or not block by electrostatic protection nude film 42 influences on next door.Especially work as electrostatic protection nude film 42 near black, the effect of absorption is arranged, cross the light that envelope is ended layer 49 thereby reduce transmission for light.In addition, electrostatic protection nude film 42 can be more close with the fixed position of photodiode 41, therefore do not need technology as is well known must consider the risk of crystal-bonding adhesive 45 climbings, also promptly the electrostatic protection nude film 42 and the fixed position of photodiode 41 need not be drawn back.On the other hand, this kind lead frame 48 also has preferable advantage for bonding wire (wire bonding) technology of plain conductor 461～463, is formed with bigger space for the line style of plain conductor 461～463, does not worry that crystalline substance collapses the generation of problem.
Fig. 5 has the vertical view of the photoelectric cell of electrostatic protection for another enforcement of the present invention.Photoelectric cell 40 ' middle member is clearer to be presented in order to make, and only will sealing, layer removes in figure.Lead frame 48 ' comprise one first electrode part 43 ' and one second electrode part 44 ', wherein first electrode part 43 ' comprise again, the first nude film holder 431 ', the lower second nude film holder 432 in position ' and the linking arm 433 of bending downwards ', and second electrode part 44 ' comprise wire welding area 442 ' and be embedded in base portion 443 in the housing 47 '.Wire welding area 441 ' from linking arm 442 ' the extend to first nude film holder 431 ' and the second nude film holder, 432 ' centre, so the bonding wire of plain conductor 461～463 is more easy.And the fixed position of photodiode 41 can more close centre, thus help photoelectric cell 40 ' luminous or receive the performance of light.
Technology contents of the present invention and technical characterstic are open as above, yet those of ordinary skills still may reach openly and do all replacement and modifications that does not deviate from spirit of the present invention based on instruction of the present invention.Therefore, it is disclosed that protection scope of the present invention should be not limited to embodiment, and should comprise various do not deviate from replacement of the present invention and modifications, and contained by appended claim.
Claims (9)
1. photoelectric element-packaging structure with electrostatic protection comprises:
One housing;
One lead frame, be arranged in this housing, and comprise one first electrode part and one second electrode part, wherein this first electrode part comprises one first nude film holder and one second nude film holder in addition, this second nude film holder is lower than this first nude film holder and this second electrode part again, this second nude film holder and this second electrode part setting of staggering simultaneously, this second electrode part comprises a wire welding area, this wire welding area extends in the middle of this first nude film holder and this second nude film holder;
One photodiode is fixed in this first nude film holder;
One electrostatic protection nude film is fixed in this second nude film holder, and this electrostatic protection nude film is positioned at the side-lower of this photodiode, and this electrostatic protection nude film is positioned at the side-lower of this second electrode part simultaneously; And
One envelope is ended layer, is filled in this housing, and covers this photodiode and this electrostatic protection nude film.
2. according to the photoelectric element-packaging structure with electrostatic protection of claim 1, wherein this photodiode is a light-emitting diode or photodiode.
3. according to the photoelectric element-packaging structure with electrostatic protection of claim 1, this electrostatic protection nude film nude film that is a Zener diode wherein.
4. according to the photoelectric element-packaging structure with electrostatic protection of claim 1, wherein this first electrode part comprises a linking arm that bends in addition downwards, and this first nude film holder and this second nude film holder interconnect by this linking arm.
5. according to the photoelectric element-packaging structure with electrostatic protection of claim 1, it comprises a plurality of plain conductors in addition, and described a plurality of plain conductors electrically connect this photodiode and this electrostatic protection nude film.
6. according to the photoelectric element-packaging structure with electrostatic protection of claim 1, it comprises in addition allows that light wears the light-emitting area of penetrating, wherein this second nude film holder compared to this first nude film holder away from this light-emitting area.
7. according to the photoelectric element-packaging structure with electrostatic protection of claim 1, wherein this second electrode part comprises one in addition and is embedded in the linking arm that base portion and in this housing connects this wire welding area and this base portion.
8. according to the photoelectric element-packaging structure with electrostatic protection of claim 7, it comprises a plurality of plain conductors in addition, and described a plurality of plain conductors electrically connect this photodiode and this electrostatic protection nude film via this wire welding area.
9. according to the photoelectric element-packaging structure with electrostatic protection of claim 1, wherein the polarity of this first electrode part be N type electrode and P type electrode one of them, the polarity of this second electrode part then is one of other relatively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008101876597A CN101771031B (en) | 2008-12-29 | 2008-12-29 | Photoelectric element-packaging structure with electrostatic protection function |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008101876597A CN101771031B (en) | 2008-12-29 | 2008-12-29 | Photoelectric element-packaging structure with electrostatic protection function |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101771031A CN101771031A (en) | 2010-07-07 |
| CN101771031B true CN101771031B (en) | 2011-09-07 |
Family
ID=42503783
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008101876597A Active CN101771031B (en) | 2008-12-29 | 2008-12-29 | Photoelectric element-packaging structure with electrostatic protection function |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101771031B (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102403306B (en) * | 2010-09-10 | 2015-09-02 | 展晶科技(深圳)有限公司 | Package structure for LED |
| CN102054829A (en) * | 2010-11-05 | 2011-05-11 | 深圳市华星光电技术有限公司 | Encapsulation structure of LED |
| CN102130273A (en) * | 2010-12-10 | 2011-07-20 | 深圳市华星光电技术有限公司 | Light emitting diode packaging structure |
| CN103515519B (en) * | 2012-06-25 | 2016-12-07 | 展晶科技(深圳)有限公司 | Light emitting diode and manufacture method thereof |
| CN106876550A (en) * | 2016-12-29 | 2017-06-20 | 广东长盈精密技术有限公司 | LED encapsulation structure and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201039524Y (en) * | 2007-04-29 | 2008-03-19 | 深圳莱特光电有限公司 | A novel LED encapsulation structure |
| CN101271889A (en) * | 2007-03-21 | 2008-09-24 | 亿光电子工业股份有限公司 | LED device |
| CN101325193A (en) * | 2007-06-13 | 2008-12-17 | 先进开发光电股份有限公司 | Encapsulation body of LED |
-
2008
- 2008-12-29 CN CN2008101876597A patent/CN101771031B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101271889A (en) * | 2007-03-21 | 2008-09-24 | 亿光电子工业股份有限公司 | LED device |
| CN201039524Y (en) * | 2007-04-29 | 2008-03-19 | 深圳莱特光电有限公司 | A novel LED encapsulation structure |
| CN101325193A (en) * | 2007-06-13 | 2008-12-17 | 先进开发光电股份有限公司 | Encapsulation body of LED |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101771031A (en) | 2010-07-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI248219B (en) | LED module | |
| AU2006254610B2 (en) | Package structure of semiconductor light-emitting device | |
| US7156538B2 (en) | LED package for backlight unit | |
| CN100561760C (en) | The led light source device | |
| CN101771031B (en) | Photoelectric element-packaging structure with electrostatic protection function | |
| TW201032294A (en) | Light emitting diode package | |
| CN204289531U (en) | Full-color LED encapsulation structure and LED show module | |
| CN103456727A (en) | Multi-chip packaging structure | |
| KR20070103319A (en) | Structure for sealing light-emitting diode chip and method thereof | |
| TW200929595A (en) | Packaging structure of electro-optic device with ESD protection | |
| CN104896324B (en) | Illumination light source and lighting device | |
| CN104681701B (en) | LED package, light source module and the back light unit including the light source module | |
| KR100954858B1 (en) | A high-luminance led package and method for manufacturing thereof | |
| CN201066697Y (en) | Encapsulation structure for side emission LED part | |
| CN102916108A (en) | Light-emitting diode packaging structure | |
| KR101974088B1 (en) | Light emitting diode device | |
| US7053421B2 (en) | Light-emitting diode | |
| KR100707870B1 (en) | Led package having a plurality of led chip | |
| CN105098020B (en) | LED light emitting device | |
| KR100850312B1 (en) | Light emitting diode module | |
| CN211628603U (en) | Luminous body module and elevator display panel | |
| KR101318145B1 (en) | LED Package | |
| WO2013149411A1 (en) | Led lamp with electrostatic protection function and backlight module using led lamp | |
| CN202905713U (en) | A led packaging structure | |
| KR101309759B1 (en) | Light emitting element package of channel letter |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| ASS | Succession or assignment of patent right |
Owner name: ZHANJING TECHNOLOGY (SHENZHEN) CO., LTD. Free format text: FORMER OWNER: ADVANCED DEVELOPMENT PHOTOELECTRIC CO., LTD. Effective date: 20110105 Owner name: ADVANCED OPTOELECTRONIC TECHNOLOGY INC. |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 000000 HSINCHU COUNTY, TAIWAN PROVINCE, CHINA TO: 518000 NO.2, DONGHUAN ROAD 2, YOUSONG NO.10 INDUSTRIAL ZONE, LONGHUA SUBDISTRICT OFFICE, BAO'AN DISTRICT, SHENZHEN CITY, GUANGDONG PROVINCE |
|
| TA01 | Transfer of patent application right |
Effective date of registration: 20110105 Address after: 518000, Shenzhen, Guangdong, Baoan District province Longhua Street tenth Pine Industrial Zone, No. two, East Ring Road, No. 2 Applicant after: Zhanjing Technology (Shenzhen) Co., Ltd. Co-applicant after: Advanced Optoelectronic Technology Inc. Address before: 000000 Hsinchu County, Taiwan, China Applicant before: Advanced Development Photoelectric Co., Ltd. |
|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20201130 Address after: No.999 Wanshou South Road, Chengnan street, Rugao City, Jiangsu Province (room 8a08-439, building 8, Rugao high tech Zone) Patentee after: RUGAO LANTU KNITTING CLOTHING Co.,Ltd. Address before: 518000, Shenzhen, Guangdong, Baoan District province Longhua Street tenth Pine Industrial Zone, No. two, East Ring Road, No. 2 Patentee before: ZHANJING Technology (Shenzhen) Co.,Ltd. Patentee before: Rongchuang Energy Technology Co.,Ltd. |