CN101765679B - 使用高中性密度等离子体植入的共形掺杂 - Google Patents

使用高中性密度等离子体植入的共形掺杂 Download PDF

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Publication number
CN101765679B
CN101765679B CN200880100529.3A CN200880100529A CN101765679B CN 101765679 B CN101765679 B CN 101765679B CN 200880100529 A CN200880100529 A CN 200880100529A CN 101765679 B CN101765679 B CN 101765679B
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China
Prior art keywords
plasma
substrate
film
plasma doping
doping
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Expired - Fee Related
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CN200880100529.3A
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English (en)
Chinese (zh)
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CN101765679A (zh
Inventor
史帝文·R·沃特
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Varian Semiconductor Equipment Associates Inc
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Varian Semiconductor Equipment Associates Inc
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Publication of CN101765679A publication Critical patent/CN101765679A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32321—Discharge generated by other radiation
    • H01J37/32339—Discharge generated by other radiation using electromagnetic radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
CN200880100529.3A 2007-07-07 2008-06-20 使用高中性密度等离子体植入的共形掺杂 Expired - Fee Related CN101765679B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/774,587 2007-07-07
US11/774,587 US20090008577A1 (en) 2007-07-07 2007-07-07 Conformal Doping Using High Neutral Density Plasma Implant
PCT/US2008/067587 WO2009009272A2 (en) 2007-07-07 2008-06-20 Conformal doping using high neutral plasma implant

Publications (2)

Publication Number Publication Date
CN101765679A CN101765679A (zh) 2010-06-30
CN101765679B true CN101765679B (zh) 2013-01-09

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN200880100529.3A Expired - Fee Related CN101765679B (zh) 2007-07-07 2008-06-20 使用高中性密度等离子体植入的共形掺杂

Country Status (6)

Country Link
US (1) US20090008577A1 (enExample)
JP (1) JP5280440B2 (enExample)
KR (1) KR20100038404A (enExample)
CN (1) CN101765679B (enExample)
TW (1) TWI428965B (enExample)
WO (1) WO2009009272A2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8436318B2 (en) * 2010-04-05 2013-05-07 Varian Semiconductor Equipment Associates, Inc. Apparatus for controlling the temperature of an RF ion source window
KR101455117B1 (ko) * 2014-07-23 2014-10-27 이에스엠주식회사 플렉서블 디스플레이 기판의 봉지 처리 장치 및 방법
US10032604B2 (en) * 2015-09-25 2018-07-24 Applied Materials, Inc. Remote plasma and electron beam generation system for a plasma reactor
FR3045206B1 (fr) * 2015-12-10 2020-01-03 Ion Beam Services Procede de commande pour un implanteur fonctionnant en immersion plasma
US10541137B2 (en) * 2018-06-01 2020-01-21 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for non line-of-sight doping
US11894250B2 (en) * 2020-03-31 2024-02-06 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system for recognizing and addressing plasma discharge during semiconductor processes
US11189462B1 (en) * 2020-07-21 2021-11-30 Tokyo Electron Limited Ion stratification using bias pulses of short duration
EP4544096A1 (en) * 2022-06-27 2025-04-30 Austin Lo Plasma-enhanced chemical vapor deposition for structurally- complex substrates

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US4394400A (en) * 1980-01-16 1983-07-19 National Research Development Corporation Method and apparatus for depositing coatings in a glow discharge
EP0406871A2 (en) * 1989-07-06 1991-01-09 Kabushiki Kaisha Toyota Chuo Kenkyusho Laser deposition method and apparatus
US6306265B1 (en) * 1999-02-12 2001-10-23 Applied Materials, Inc. High-density plasma for ionized metal deposition capable of exciting a plasma wave
CN1613130A (zh) * 2001-12-04 2005-05-04 瓦里安半导体设备联合公司 用于等离子搀杂系统的均匀性控制
CN1693536A (zh) * 2004-05-03 2005-11-09 应用材料公司 保形性、应力和化学气相沉积层成分独立可变的甚低温化学气相沉积工艺

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JPH0770512B2 (ja) * 1985-02-04 1995-07-31 日本電信電話株式会社 低エネルギイオン化粒子照射装置
JPS61183925A (ja) * 1985-02-12 1986-08-16 Nec Corp 電子ビ−ムド−ピング
JP2635021B2 (ja) * 1985-09-26 1997-07-30 宣夫 御子柴 堆積膜形成法及びこれに用いる装置
JPS6289861A (ja) * 1985-10-15 1987-04-24 Showa Shinku:Kk 薄膜衝撃蒸着方法とその装置
JPH0618173B2 (ja) * 1986-06-19 1994-03-09 日本電気株式会社 薄膜形成方法
JP2590502B2 (ja) * 1987-12-10 1997-03-12 松下電器産業株式会社 不純物のドーピング方法
JP2588971B2 (ja) * 1989-07-06 1997-03-12 株式会社豊田中央研究所 レーザ蒸着方法及び装置
JPH0448723A (ja) * 1990-06-15 1992-02-18 Fuji Xerox Co Ltd 半導体装置の製造方法
JPH05217933A (ja) * 1992-02-06 1993-08-27 Hitachi Ltd 表面構造構成法
US6325078B2 (en) * 1998-01-07 2001-12-04 Qc Solutions, Inc., Apparatus and method for rapid photo-thermal surface treatment
US6290825B1 (en) * 1999-02-12 2001-09-18 Applied Materials, Inc. High-density plasma source for ionized metal deposition
US20040016402A1 (en) * 2002-07-26 2004-01-29 Walther Steven R. Methods and apparatus for monitoring plasma parameters in plasma doping systems
CA2507491C (en) * 2002-11-27 2011-03-29 Katrin Fuhrer A time-of-flight mass spectrometer with improved data acquisition system
JP2005093518A (ja) * 2003-09-12 2005-04-07 Matsushita Electric Ind Co Ltd 不純物導入の制御方法および不純物導入装置
US6992284B2 (en) * 2003-10-20 2006-01-31 Ionwerks, Inc. Ion mobility TOF/MALDI/MS using drift cell alternating high and low electrical field regions
US20050205211A1 (en) * 2004-03-22 2005-09-22 Vikram Singh Plasma immersion ion implantion apparatus and method
US20060236931A1 (en) * 2005-04-25 2006-10-26 Varian Semiconductor Equipment Associates, Inc. Tilted Plasma Doping
US7265368B2 (en) * 2005-05-13 2007-09-04 Applera Corporation Ion optical mounting assemblies
US8642135B2 (en) * 2005-09-01 2014-02-04 Micron Technology, Inc. Systems and methods for plasma doping microfeature workpieces
US7524743B2 (en) * 2005-10-13 2009-04-28 Varian Semiconductor Equipment Associates, Inc. Conformal doping apparatus and method
US20070084564A1 (en) * 2005-10-13 2007-04-19 Varian Semiconductor Equipment Associates, Inc. Conformal doping apparatus and method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4394400A (en) * 1980-01-16 1983-07-19 National Research Development Corporation Method and apparatus for depositing coatings in a glow discharge
EP0406871A2 (en) * 1989-07-06 1991-01-09 Kabushiki Kaisha Toyota Chuo Kenkyusho Laser deposition method and apparatus
US6306265B1 (en) * 1999-02-12 2001-10-23 Applied Materials, Inc. High-density plasma for ionized metal deposition capable of exciting a plasma wave
CN1613130A (zh) * 2001-12-04 2005-05-04 瓦里安半导体设备联合公司 用于等离子搀杂系统的均匀性控制
CN1693536A (zh) * 2004-05-03 2005-11-09 应用材料公司 保形性、应力和化学气相沉积层成分独立可变的甚低温化学气相沉积工艺

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JP特公平7-70512B2 1995.07.31

Also Published As

Publication number Publication date
US20090008577A1 (en) 2009-01-08
WO2009009272A2 (en) 2009-01-15
JP5280440B2 (ja) 2013-09-04
KR20100038404A (ko) 2010-04-14
JP2010532919A (ja) 2010-10-14
WO2009009272A3 (en) 2009-03-05
TW200910428A (en) 2009-03-01
TWI428965B (zh) 2014-03-01
CN101765679A (zh) 2010-06-30

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