TWI428965B - 電漿摻雜設備與共形電漿摻雜方法 - Google Patents
電漿摻雜設備與共形電漿摻雜方法 Download PDFInfo
- Publication number
- TWI428965B TWI428965B TW097123555A TW97123555A TWI428965B TW I428965 B TWI428965 B TW I428965B TW 097123555 A TW097123555 A TW 097123555A TW 97123555 A TW97123555 A TW 97123555A TW I428965 B TWI428965 B TW I428965B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- film
- plasma
- plasma doping
- period
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 45
- 239000000758 substrate Substances 0.000 claims description 91
- 239000010408 film Substances 0.000 claims description 70
- 230000005855 radiation Effects 0.000 claims description 61
- 150000002500 ions Chemical class 0.000 claims description 53
- 230000007935 neutral effect Effects 0.000 claims description 44
- 239000002245 particle Substances 0.000 claims description 44
- 230000003287 optical effect Effects 0.000 claims description 22
- 239000002019 doping agent Substances 0.000 claims description 16
- 239000000126 substance Substances 0.000 claims description 11
- 239000002002 slurry Substances 0.000 claims description 8
- 230000001360 synchronised effect Effects 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 238000004969 ion scattering spectroscopy Methods 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 4
- 238000003795 desorption Methods 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims 4
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 239000012535 impurity Substances 0.000 claims 1
- 239000007789 gas Substances 0.000 description 64
- 238000005468 ion implantation Methods 0.000 description 14
- 238000001179 sorption measurement Methods 0.000 description 12
- 239000007943 implant Substances 0.000 description 11
- 239000003085 diluting agent Substances 0.000 description 8
- 239000003989 dielectric material Substances 0.000 description 7
- 230000003071 parasitic effect Effects 0.000 description 7
- 238000012545 processing Methods 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000001816 cooling Methods 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 238000002513 implantation Methods 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- 239000003463 adsorbent Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009616 inductively coupled plasma Methods 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000011068 loading method Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32321—Discharge generated by other radiation
- H01J37/32339—Discharge generated by other radiation using electromagnetic radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32412—Plasma immersion ion implantation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
- Plasma Technology (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/774,587 US20090008577A1 (en) | 2007-07-07 | 2007-07-07 | Conformal Doping Using High Neutral Density Plasma Implant |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200910428A TW200910428A (en) | 2009-03-01 |
| TWI428965B true TWI428965B (zh) | 2014-03-01 |
Family
ID=40220719
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097123555A TWI428965B (zh) | 2007-07-07 | 2008-06-24 | 電漿摻雜設備與共形電漿摻雜方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20090008577A1 (enExample) |
| JP (1) | JP5280440B2 (enExample) |
| KR (1) | KR20100038404A (enExample) |
| CN (1) | CN101765679B (enExample) |
| TW (1) | TWI428965B (enExample) |
| WO (1) | WO2009009272A2 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI884159B (zh) * | 2020-03-31 | 2025-05-21 | 台灣積體電路製造股份有限公司 | 在半導體製程期間對電漿放電進行辨認和尋址的方法及系統 |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8436318B2 (en) * | 2010-04-05 | 2013-05-07 | Varian Semiconductor Equipment Associates, Inc. | Apparatus for controlling the temperature of an RF ion source window |
| KR101455117B1 (ko) * | 2014-07-23 | 2014-10-27 | 이에스엠주식회사 | 플렉서블 디스플레이 기판의 봉지 처리 장치 및 방법 |
| US10032604B2 (en) * | 2015-09-25 | 2018-07-24 | Applied Materials, Inc. | Remote plasma and electron beam generation system for a plasma reactor |
| FR3045206B1 (fr) * | 2015-12-10 | 2020-01-03 | Ion Beam Services | Procede de commande pour un implanteur fonctionnant en immersion plasma |
| US10541137B2 (en) * | 2018-06-01 | 2020-01-21 | Varian Semiconductor Equipment Associates, Inc. | Method and apparatus for non line-of-sight doping |
| US11189462B1 (en) * | 2020-07-21 | 2021-11-30 | Tokyo Electron Limited | Ion stratification using bias pulses of short duration |
| EP4544096A1 (en) * | 2022-06-27 | 2025-04-30 | Austin Lo | Plasma-enhanced chemical vapor deposition for structurally- complex substrates |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4217374A (en) * | 1978-03-08 | 1980-08-12 | Energy Conversion Devices, Inc. | Amorphous semiconductors equivalent to crystalline semiconductors |
| GB2069008B (en) * | 1980-01-16 | 1984-09-12 | Secr Defence | Coating in a glow discharge |
| JPH0770512B2 (ja) * | 1985-02-04 | 1995-07-31 | 日本電信電話株式会社 | 低エネルギイオン化粒子照射装置 |
| JPS61183925A (ja) * | 1985-02-12 | 1986-08-16 | Nec Corp | 電子ビ−ムド−ピング |
| JP2635021B2 (ja) * | 1985-09-26 | 1997-07-30 | 宣夫 御子柴 | 堆積膜形成法及びこれに用いる装置 |
| JPS6289861A (ja) * | 1985-10-15 | 1987-04-24 | Showa Shinku:Kk | 薄膜衝撃蒸着方法とその装置 |
| JPH0618173B2 (ja) * | 1986-06-19 | 1994-03-09 | 日本電気株式会社 | 薄膜形成方法 |
| JP2590502B2 (ja) * | 1987-12-10 | 1997-03-12 | 松下電器産業株式会社 | 不純物のドーピング方法 |
| JP2588971B2 (ja) * | 1989-07-06 | 1997-03-12 | 株式会社豊田中央研究所 | レーザ蒸着方法及び装置 |
| EP0534505B1 (en) * | 1989-07-06 | 1998-12-09 | Toyota Jidosha Kabushiki Kaisha | Laser deposition method |
| JPH0448723A (ja) * | 1990-06-15 | 1992-02-18 | Fuji Xerox Co Ltd | 半導体装置の製造方法 |
| JPH05217933A (ja) * | 1992-02-06 | 1993-08-27 | Hitachi Ltd | 表面構造構成法 |
| US6325078B2 (en) * | 1998-01-07 | 2001-12-04 | Qc Solutions, Inc., | Apparatus and method for rapid photo-thermal surface treatment |
| US6306265B1 (en) * | 1999-02-12 | 2001-10-23 | Applied Materials, Inc. | High-density plasma for ionized metal deposition capable of exciting a plasma wave |
| US6290825B1 (en) * | 1999-02-12 | 2001-09-18 | Applied Materials, Inc. | High-density plasma source for ionized metal deposition |
| US7223676B2 (en) * | 2002-06-05 | 2007-05-29 | Applied Materials, Inc. | Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer |
| US20030101935A1 (en) * | 2001-12-04 | 2003-06-05 | Walther Steven R. | Dose uniformity control for plasma doping systems |
| US20040016402A1 (en) * | 2002-07-26 | 2004-01-29 | Walther Steven R. | Methods and apparatus for monitoring plasma parameters in plasma doping systems |
| CA2507491C (en) * | 2002-11-27 | 2011-03-29 | Katrin Fuhrer | A time-of-flight mass spectrometer with improved data acquisition system |
| JP2005093518A (ja) * | 2003-09-12 | 2005-04-07 | Matsushita Electric Ind Co Ltd | 不純物導入の制御方法および不純物導入装置 |
| US6992284B2 (en) * | 2003-10-20 | 2006-01-31 | Ionwerks, Inc. | Ion mobility TOF/MALDI/MS using drift cell alternating high and low electrical field regions |
| US20050205211A1 (en) * | 2004-03-22 | 2005-09-22 | Vikram Singh | Plasma immersion ion implantion apparatus and method |
| US20060236931A1 (en) * | 2005-04-25 | 2006-10-26 | Varian Semiconductor Equipment Associates, Inc. | Tilted Plasma Doping |
| US7265368B2 (en) * | 2005-05-13 | 2007-09-04 | Applera Corporation | Ion optical mounting assemblies |
| US8642135B2 (en) * | 2005-09-01 | 2014-02-04 | Micron Technology, Inc. | Systems and methods for plasma doping microfeature workpieces |
| US7524743B2 (en) * | 2005-10-13 | 2009-04-28 | Varian Semiconductor Equipment Associates, Inc. | Conformal doping apparatus and method |
| US20070084564A1 (en) * | 2005-10-13 | 2007-04-19 | Varian Semiconductor Equipment Associates, Inc. | Conformal doping apparatus and method |
-
2007
- 2007-07-07 US US11/774,587 patent/US20090008577A1/en not_active Abandoned
-
2008
- 2008-06-20 WO PCT/US2008/067587 patent/WO2009009272A2/en not_active Ceased
- 2008-06-20 CN CN200880100529.3A patent/CN101765679B/zh not_active Expired - Fee Related
- 2008-06-20 JP JP2010514994A patent/JP5280440B2/ja not_active Expired - Fee Related
- 2008-06-20 KR KR1020107002010A patent/KR20100038404A/ko not_active Ceased
- 2008-06-24 TW TW097123555A patent/TWI428965B/zh not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI884159B (zh) * | 2020-03-31 | 2025-05-21 | 台灣積體電路製造股份有限公司 | 在半導體製程期間對電漿放電進行辨認和尋址的方法及系統 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20090008577A1 (en) | 2009-01-08 |
| WO2009009272A2 (en) | 2009-01-15 |
| JP5280440B2 (ja) | 2013-09-04 |
| KR20100038404A (ko) | 2010-04-14 |
| JP2010532919A (ja) | 2010-10-14 |
| WO2009009272A3 (en) | 2009-03-05 |
| TW200910428A (en) | 2009-03-01 |
| CN101765679A (zh) | 2010-06-30 |
| CN101765679B (zh) | 2013-01-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI443715B (zh) | 基板之電漿處理裝置及其方法 | |
| TWI428965B (zh) | 電漿摻雜設備與共形電漿摻雜方法 | |
| US9123509B2 (en) | Techniques for plasma processing a substrate | |
| KR100367662B1 (ko) | 하이퍼서멀 중성입자 발생 장치 및 이를 채용하는 중성입자 처리 장치 | |
| US7524743B2 (en) | Conformal doping apparatus and method | |
| TWI423735B (zh) | 具有導電性頂端區域之射頻電漿源 | |
| US7820533B2 (en) | Multi-step plasma doping with improved dose control | |
| US20060236931A1 (en) | Tilted Plasma Doping | |
| TW200845828A (en) | Plasma source with liner for reducing metal contamination | |
| US20070170867A1 (en) | Plasma Immersion Ion Source With Low Effective Antenna Voltage | |
| JP2010532919A5 (enExample) | ||
| US20090104761A1 (en) | Plasma Doping System With Charge Control | |
| US20070084564A1 (en) | Conformal doping apparatus and method | |
| US20090104719A1 (en) | Plasma Doping System with In-Situ Chamber Condition Monitoring |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |