CN101762984B - Photoresist instillation system, photoresist nozzle and application method thereof - Google Patents
Photoresist instillation system, photoresist nozzle and application method thereof Download PDFInfo
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- CN101762984B CN101762984B CN2008102080486A CN200810208048A CN101762984B CN 101762984 B CN101762984 B CN 101762984B CN 2008102080486 A CN2008102080486 A CN 2008102080486A CN 200810208048 A CN200810208048 A CN 200810208048A CN 101762984 B CN101762984 B CN 101762984B
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Abstract
The invention provides a photoresist instillation system, a photoresist nozzle and a utilization method thereof. The photoresist instillation system comprises a photoresist feedway, a solvent feedway and a nozzle connected with the photoresist feedway, wherein, the photoresist nozzle comprises a tubular transportation part, a storage part connected with the tubular transportation part in a sealing manner and a spraying part connected with the storage part in a sealing manner, wherein, the maximum flow of the storage part is larger than that of the tubular transportation part and the spraying part, the storage part is used for storing the solvent absorbed from the solvent feedway during the resorption of the nozzle. By adopting the invention, resource is saved, cost is lowered, and as the storage part is arranged on the nozzle in the invention, the nozzle replaces the RRC nozzle and photoresist nozzle in the prior art, thus the structure is simpler and the operation is convenient.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly a kind of photoresist instillation system, photoresist nozzle and method of application thereof.
Background technology
In semiconductor is made; Usually utilize lithography step on wafer, to form photoresist mask layer; Photoresist mask layer will need the zone of etching to expose; The zone that does not need etching is covered, thereby in subsequent etching technology, just can area exposed be etched away, remove photoresist mask layer then and just obtained required semiconductor structure.In general; In photoetching, at first to utilize the photoresist coating unit to the wafer surface photoresist that instils; Then photoresist is evenly being distributed in wafer surface, so just forming photoresist layer, and then photoresist layer made public and develop just can obtain photoresist mask layer.
Because the quality quality of photoresist mask layer has influence on quality of semiconductor devices; Therefore play an important role at photoetching in semiconductor manufacture glue coating unit; For example disclosed on August 14th, 2008; Publication number is in the one Chinese patent application of CN101178542A a kind of photoresist coating unit to be provided, and is as shown in Figure 1, comprises photoresist nozzle 10, RRC (Reduction Resist Consumption nozzle 20, photoresist pipeline 30 and photoresist heating system 40.As shown in Figure 2, photoresist nozzle 10 is right cylinder with RRC nozzle 20 for top in this device, and the bottom is a centrum.This photoresist coating unit is before carrying out silicon chip spraying photoresist; RRC nozzle 20 carries out wetting to silicon chip surface spraying one deck solvent earlier; Photoresist nozzle 10 is to silicon chip spraying photoresist then, and photoresist nozzle 10 can carry out pumpback after having sprayed photoresist, and the photoresist in photoresist nozzle 10 exits is reduced in the photoresist nozzle; The minimizing photoresist is contacted with air form crystallization; But because still can form crystallization, therefore for example 1800s or 3600s of certain hour before photoresist nozzle 10 spray next time or at interval need carry out once empty spray (dummy) earlier; The part photoresists that contacts the formation crystallization in the photoresist nozzle 10 with air are sprayed onto in the waste liquid throw away, and then spray photoresist to wafer.
Above-mentioned photoresist coating unit can not effectively stop the photoresist in the photoresist nozzle to contact the formation crystallization with air, therefore before each the coating, all will the photoresist of some crystallizations be sprayed onto in the waste liquid, has wasted resource, and cost is higher.
Summary of the invention
In order to address the above problem, the invention provides a kind of photoresist coating unit and method thereof, this device has been saved resource, has reduced cost.
Photoresist instillation system of the present invention; Comprise photoresist feedway, solvent supplying apparatus, the nozzle that links to each other with said photoresist feedway; Said photoresist nozzle comprises the tubulose transport section memory unit that sealing links to each other with the tubulose transport section; And the spraying parts that sealing links to each other with memory unit; Wherein the average discharge of memory unit is greater than the average discharge of tubulose transport section with the spraying parts, and when said nozzle resorption, said memory unit is used to store the solvent that sucks in the said solvent supplying apparatus.
Optional, the tubulose transport section of said nozzle, memory unit and spraying parts are an one-time formed integral body.
Optional, the volume of the memory unit of said nozzle is 0.5mL-5mL.
Optional, said memory unit is a rhombus along the section that photoresist flows to.
Optional, the spraying parts of said nozzle comprise a centrum, the cone top part of said centrum is a spout.
Optional, comprise the tubulose transport section memory unit that sealing links to each other with the tubulose transport section, and the spraying parts that sealing links to each other with memory unit, wherein the average discharge of memory unit is greater than the average discharge of tubulose transport section with the spraying parts.
Optional, the tubulose transport section of said nozzle, memory unit and spraying parts are an one-time formed integral body.
Optional, the volume of the memory unit of said nozzle is 0.5mL-5mL.
The method of application of corresponding photoresist instillation system of the present invention comprises step:
The solvent of said nozzle in wafer surface sprays said memory unit;
Said nozzle sprays the photoresist that said photoresist feedway provides to wafer surface;
Said nozzle is from said spraying parts resorption air;
The spout of said spraying parts contacts with said solvent supplying apparatus;
Solvent in the said solvent supplying apparatus of said nozzle resorption gets in the said memory unit solvent.
Optional, the air of said resorption is 2mm along the height that photoresist flows in nozzle.
The advantage of technique scheme is:
Because nozzle is provided with memory unit, therefore utilizes the storage component stores solvent, thereby photoresist is enclosed in the nozzle; Photoresist and air have been isolated; Reduced contacting of photoresist and air, so just can not form crystallization, so the present invention just no longer needs empty spray (dummy); So significantly reduced the waste of photoresist, reduced cost.And because be utilized in nozzle among the present invention memory unit is set, makes nozzle replace RRC nozzle of the prior art and photoresist nozzle, therefore make structure simpler, easy to operate.
Description of drawings
Fig. 1 is a kind of synoptic diagram of existing photoresist coating unit;
Fig. 2 is the structural representation of photoresist instillation system one embodiment of the present invention;
Fig. 3 is the method for application process flow diagram of photoresist instillation system one embodiment of the present invention;
Fig. 4-Fig. 7 is the method for application synoptic diagram for photoresist of the present invention instils.
Embodiment
For make above-mentioned purpose of the present invention, feature and advantage can be more obviously understandable, does detailed explanation below in conjunction with the accompanying drawing specific embodiments of the invention.
A lot of details have been set forth in the following description so that make much of the present invention.But the present invention can implement much to be different from alternate manner described here, and those skilled in the art can do similar popularization under the situation of intension of the present invention, so the present invention does not receive the restriction of following disclosed practical implementation.
Secondly, the present invention utilizes synoptic diagram to be described in detail, when the embodiment of the invention is detailed; For ease of explanation; The sectional view of expression device architecture can be disobeyed general ratio and done local the amplification, and said synoptic diagram is instance, and it should not limit the scope of the present invention's protection at this.The three dimensions size that in actual fabrication, should comprise in addition, length, width and the degree of depth.
In semiconductor was made, how to reduce cost was the problem that People more and more is concerned about, that therefore in each step process, all can try one's best reduces cost little waste.Present lithography step comprises coating photoresist, exposure and three basic steps of development; But in the step that applies photoresist; Because photoresist is easy and air forms crystallization; Therefore after completion is once instiled, adopt pumpback usually in order to reduce crystallization, the photoresist of nozzle exit is reduced in the photoresist nozzle, even if but adopt this method still to have crystalline polamer; Therefore must be before spraying next time or at interval certain hour carry out once empty spray (dummy); Just the photoresist that contacts crystallization in the nozzle with air is sprayed onto in the waste liquid and throws away, do not have the photoresist of crystallization to carry out instillation next time, therefore just caused a large amount of wastes of photoresist like this with the inside.In order also further to have adopted the RRC technology in the consumption prior art that reduces photoresist, just before the spraying photoresist, spray one deck solvent to silicon chip surface, can reduce the consumption of photoresist like this, but cause complicated operation like this.
The inventor provides a kind of photoresist instillation system through research; Comprise photoresist feedway, solvent supplying apparatus, the nozzle that links to each other with said photoresist feedway; Said photoresist nozzle comprises the tubulose transport section memory unit that sealing links to each other with the tubulose transport section; And the spraying parts that sealing links to each other with memory unit; Wherein the average discharge of memory unit is greater than the average discharge of tubulose transport section with the spraying parts, the solvent that storage sucked in the said solvent supplying apparatus when said memory unit was used for the nozzle resorption.
Optional, the tubulose transport section of said nozzle, memory unit and spraying parts are an one-time formed integral body.
Optional, the volume of the memory unit of said nozzle is 0.5mL-5mL.
Optional, said memory unit is a rhombus along the section that photoresist flows to.
Optional, the spraying parts of said nozzle comprise a centrum, the cone top part of said centrum is a spout.
Optional, comprise the tubulose transport section memory unit that sealing links to each other with the tubulose transport section, and the spraying parts that sealing links to each other with memory unit, wherein the average discharge of memory unit is greater than the average discharge of tubulose transport section with the spraying parts.
Optional, the tubulose transport section of said nozzle, memory unit and spraying parts are an one-time formed integral body.
Optional, the volume of the memory unit of said nozzle is 0.5mL-5mL.
The method of application of corresponding photoresist instillation system of the present invention comprises step:
The solvent of said nozzle in wafer surface sprays said memory unit;
Said nozzle sprays the photoresist that said photoresist feedway provides to wafer surface;
Said nozzle is from said spraying parts resorption air;
The spout of said spraying parts contacts with said solvent supplying apparatus;
Solvent in the said solvent supplying apparatus of said nozzle resorption gets in the said memory unit solvent.
Optional, the air of said resorption is 2mm along the height that photoresist flows in nozzle.
Do detailed explanation below in conjunction with the accompanying drawing specific embodiments of the invention.
Fig. 2 is the structural representation of photoresist instillation system one embodiment of the present invention.As shown in Figure 2, in the present embodiment, the photoresist instillation system comprises photoresist feedway 110, solvent supplying apparatus 120 and nozzle 130.Wherein, nozzle 130 links to each other through pipeline 1101 with said photoresist feedway 110, is used to store photoresist in the photoresist feedway 110, and photoresist can be transported to nozzle 130 through pipeline 1101.Nozzle 130 comprises tubulose transport section tubulose transport section 1302, memory unit 1304 and the spraying parts 1306 that sealing successively links to each other; Wherein tubulose transport section 1302 said photoresist feedwaies 110 link to each other through pipeline 1101; Wherein the average discharge of memory unit 1304 is greater than the average discharge of tubulose transport section 1302 with spraying parts 1306; Therefore memory unit 1304 is compared than the tubulose transport section 1302 or the spraying parts 1306 of equal height, and volume is bigger.Tubulose transport section tubulose transport section 1302, memory unit 1304 and spraying parts 1306 are an one-time formed integral body in the present embodiment.The volume of memory unit 1304 is 0.5mL-5mL, can store in the memory unit 1304 like this and enough once be sprayed onto the used solvent of wafer surface.And memory unit 1304 is a rhombus along the section that photoresist flows to, and when making spraying solvent or photoresist like this, can under action of gravity, flow to end, and can not cause waste because of existing the dead angle to make solvent or photoresist remain in the memory unit 1304.
The free end of the spraying parts 1306 of said nozzle 130 is an inversion cone, and the cone top part of centrum is a spout 13060.
Can also comprise in addition and control device 140; Said control device 140 can comprise that control nozzle resorption unit (not shown), control nozzle spray unit (not shown) and control mobile unit (not shown) outward; Nozzle 130 outer sprays can be controlled in control nozzle resorption unit, and concrete is sprays outside nozzle 130 from the spout 13060 of the spraying parts 1306 of nozzle 130; Control nozzle resorption unit controls nozzle 130 resorptions, concrete is to inhale in nozzle 130 from spout 13060.
Control mobile unit in addition and can control nozzle 130 and move, for example solvent supplying apparatus 120 is motionless with the base station that holds wafer, and control mobile unit control nozzle 130 is in solvent supplying apparatus 120 and hold between the base station of wafer and move; Control mobile unit in addition and also can control base station 160 and move with solvent supplying apparatus 120, for example nozzle 130 is motionless, and control mobile unit control base station 160 moves with solvent supplying apparatus 120.
Fig. 3 is the method for application process flow diagram of photoresist instillation system one embodiment of the present invention; Fig. 4-Fig. 7 is the method for application synoptic diagram for photoresist of the present invention instils.Describe below in conjunction with the method for application of this device of Fig. 2-Fig. 7 this device.
In the present embodiment, the photoresist instillation system comprises that also the control mobile unit (not shown) of base station 160 and control device 140 links to each other.
At first, in the memory unit 1304 of nozzle 130, deposit solvent in advance, said solvent be OK73 (PGME, PGMEN).For example can go into solvent from solvent supplying apparatus 120 resorptions.
Carry out the following step as shown in Figure 3 then:
Step S10: the solvent of said nozzle in wafer surface sprays said memory unit.
Concrete; As shown in Figure 4; The control mobile unit has wafer and moves arm, and it moves to wafer 100 on the base station 160, and the control mobile unit makes base station 160 move to nozzle 130 belows of photoresist instillation system; Control nozzle then and spray the solvent of unit controls nozzle 130 in wafer 100 surface ejection memory units 1304 outward; Solvent outwards is sprayed onto the central authorities of wafer from the spout 13060 of spraying parts 1306, and the solvent capacity of ejection satisfies the amount that a slice wafer surface applies, and for example is 0.5mL-5mL.And control mobile unit control base station 160 drives wafer 100 rotations, and solvent is evenly distributed to wafer 100 surfaces under centrifugal action.Wafer surface is because exist group OH therefore to show as water wettability; This solvent OK73 (PGME; Monomethyl ether propylene glycol or PGMEN) be hydrophobic nature; Therefore apply these solvents of one deck on wafer 100 surfaces earlier and carry out wettingly, apply the absorption that photoresist can reduce 100 pairs of photoresists of wafer again, save the consumption of photoresist.
Step S20: said nozzle sprays the photoresist that said photoresist feedway provides to wafer surface.
Concrete; As shown in Figure 5; The control nozzle of control device 140 sprays unit controls nozzle 130 outward and sprays photoresist from spout 13060 to wafer surface, and photoresist feedway 110 is supplied with photoresists to nozzle 130 simultaneously, makes photoresist pass through pipeline 1101 and gets in the tubulose transport section 1302 of nozzles 130; Through memory unit 1304 and spraying parts 1306, finally the spout 13060 through spraying parts 1306 sprays to wafer 100 central authorities then.Base station 160 drives control wafer 100 rotations, and photoresist is evenly distributed to wafer 100 surfaces under centrifugal action.
Step S30: said nozzle is from said spraying parts resorption air.
As shown in Figure 6; Control nozzle resorption unit controls nozzle 130 back suctions of control device 140; Just the photoresist at spout 13060 places is inhaled in nozzle 130, the spraying parts 1306 of nozzle 130 in, is formed a part of cavity, this cavity be used for isolating in the nozzle 130 photoresist with will the inspiration nozzle 130 interior solvents; The air of resorption is 2mm along the height that photoresist flows in nozzle 130, and this has guaranteed that highly photoresist and solvent can not mix.
Step S40: the spout 13060 of said spraying parts contacts with said solvent supplying apparatus.
As shown in Figure 7, in this step solvent supplying apparatus 120 Be Controlled mobile units move to nozzle 130 below, and spout 13060 is immersed in the solvent in the solvent supplying apparatus 120.
Step S50: the solvent in the said solvent supplying apparatus of said control device control nozzle resorption gets in the said memory unit solvent.
As shown in Figure 7, the control nozzle resorption unit controls nozzle 130 of control device 140 sucks the solvent in the solvent supplying apparatus 120 from spout 13060 in nozzle 130 in this step, and solvent is stored in the memory unit 1304; The quantity of solvent of resorption can satisfy the amount that a slice wafer surface applies in the present embodiment, and for example 0.5mL-5mL, and this solvent is enclosed in photoresist in the nozzle 130; Photoresist and air have been isolated; Thereby reduced contacting of photoresist and air, so just can not form crystallization, so the present invention just no longer needs empty spray (dummy); Therefore significantly reduce the waste of photoresist, reduced cost.And because the nozzle among the present invention has replaced RRC nozzle of the prior art and photoresist nozzle, therefore make structure simpler, easy to operate.
The foregoing description is of the present invention illustrating, and wherein the photoresist instillation system is not limited to the foregoing description, and the concrete operations of method of application also are not limited to the step in the foregoing description.
In another embodiment, the present invention also provides a kind of photoresist nozzle 130.Nozzle 130 comprises tubulose transport section tubulose transport section 1302, tubulose transport section 1302 and the spraying parts 1306 that once sealing links to each other; Wherein memory unit 1304 average discharges are greater than tubulose transport section 1302 average discharge with spraying parts 1306, thus the memory unit 1304 of equal height to compare solvent than tubulose transport section 1302 or spraying parts 1306 bigger.Tubulose transport section tubulose transport section 1302, tubulose transport section 1302 and spraying parts 1306 are an one-time formed integral body in the present embodiment.The volume of memory unit 1304 is 0.5mL-5mL, can store in the memory unit 1304 like this and enough once be sprayed onto the used solvent of wafer surface.And memory unit 1304 is a rhombus along the section that photoresist flows to, and when making spraying solvent or photoresist like this, can under action of gravity, flow to end, and can not cause waste because of existing the dead angle to make solvent or photoresist remain in the memory unit 1304.
The free end of the spraying parts 1306 of said nozzle 130 is an inversion cone, and the cone top part of centrum is a spout 13060.
Though the present invention with preferred embodiment openly as above; But it is not to be used for limiting the present invention; Any those skilled in the art are not breaking away from the spirit and scope of the present invention; Can make possible change and modification, so protection scope of the present invention should be as the criterion with the scope that claim of the present invention was defined.
Claims (10)
1. photoresist instillation system comprises photoresist feedway, solvent supplying apparatus, the nozzle that links to each other with said photoresist feedway,
It is characterized in that; Said nozzle comprises the tubulose transport section memory unit that sealing links to each other with the tubulose transport section; And the spraying parts that sealing links to each other with memory unit; Wherein the maximum flow of memory unit is greater than the maximum flow of tubulose transport section with the spraying parts, the solvent that storage sucked in the said solvent supplying apparatus when said memory unit was used for the nozzle resorption.
2. photoresist instillation system according to claim 1 is characterized in that, the tubulose transport section of said nozzle, memory unit and spraying parts are an one-time formed integral body.
3. photoresist instillation system according to claim 2 is characterized in that, the volume of the memory unit of said nozzle is 0.5mL-5mL.
4. photoresist instillation system according to claim 3 is characterized in that, said memory unit is a rhombus along the section that photoresist flows to.
5. photoresist instillation system according to claim 1 is characterized in that, the spraying parts of said nozzle comprise a centrum, and the cone top part of said centrum is a spout.
6. photoresist nozzle; It is characterized in that; Comprise the tubulose transport section memory unit that sealing links to each other with the tubulose transport section, and the spraying parts that sealing links to each other with memory unit, wherein the average discharge of memory unit is greater than the maximum flow of tubulose transport section with the spraying parts.
7. nozzle according to claim 6 is characterized in that, the tubulose transport section of said nozzle, memory unit and spraying parts are an one-time formed integral body.
8. nozzle according to claim 7 is characterized in that, the volume of the memory unit of said nozzle is 0.5mL-5mL.
9. the method for application of the described photoresist instillation system of claim 1 is characterized in that, comprises step:
The solvent of said nozzle in wafer surface sprays said memory unit;
Said nozzle sprays the photoresist that said photoresist feedway provides to wafer surface;
Said nozzle is from said spraying parts resorption air;
The spout of said spraying parts contacts with said solvent supplying apparatus;
Solvent in the said solvent supplying apparatus of said nozzle resorption gets in the said memory unit solvent.
10. method of application according to claim 9 is characterized in that, the air of said resorption is 2mm along the height that photoresist flows in nozzle.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008102080486A CN101762984B (en) | 2008-12-25 | 2008-12-25 | Photoresist instillation system, photoresist nozzle and application method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008102080486A CN101762984B (en) | 2008-12-25 | 2008-12-25 | Photoresist instillation system, photoresist nozzle and application method thereof |
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| Publication Number | Publication Date |
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| CN101762984A CN101762984A (en) | 2010-06-30 |
| CN101762984B true CN101762984B (en) | 2012-08-22 |
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| CN2008102080486A Expired - Fee Related CN101762984B (en) | 2008-12-25 | 2008-12-25 | Photoresist instillation system, photoresist nozzle and application method thereof |
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Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105446081B (en) * | 2014-09-22 | 2019-11-08 | 中芯国际集成电路制造(上海)有限公司 | The method for preventing photoresist from crystallizing |
| CN105728243A (en) * | 2014-12-08 | 2016-07-06 | 沈阳芯源微电子设备有限公司 | Device and method for moisture preservation of photoresist sprayer |
| CN108057573B (en) * | 2016-11-07 | 2021-06-22 | 沈阳芯源微电子设备股份有限公司 | Photoresist moisturizing system and moisturizing method thereof |
| CN110976202B (en) * | 2019-12-10 | 2022-10-11 | 芜湖佳豪电子有限公司 | Silicon chip processing is with all gluing machine |
| CN111739823A (en) * | 2020-06-29 | 2020-10-02 | 中国科学院微电子研究所 | Photoresist coating nozzle and photoresist coating equipment with same |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1508845A (en) * | 2002-12-18 | 2004-06-30 | 旺宏电子股份有限公司 | Photoresist supply system and method |
| CN1766734A (en) * | 2004-10-13 | 2006-05-03 | 三星电子株式会社 | Be used for method and apparatus at distribution photoresists such as manufacturing semiconductor devices |
-
2008
- 2008-12-25 CN CN2008102080486A patent/CN101762984B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1508845A (en) * | 2002-12-18 | 2004-06-30 | 旺宏电子股份有限公司 | Photoresist supply system and method |
| CN1766734A (en) * | 2004-10-13 | 2006-05-03 | 三星电子株式会社 | Be used for method and apparatus at distribution photoresists such as manufacturing semiconductor devices |
Non-Patent Citations (1)
| Title |
|---|
| JP特开2000-100684A 2000.04.07 |
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