CN101762356A - Vacuum micro-electronics pressure sensor - Google Patents
Vacuum micro-electronics pressure sensor Download PDFInfo
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- CN101762356A CN101762356A CN201010042063A CN201010042063A CN101762356A CN 101762356 A CN101762356 A CN 101762356A CN 201010042063 A CN201010042063 A CN 201010042063A CN 201010042063 A CN201010042063 A CN 201010042063A CN 101762356 A CN101762356 A CN 101762356A
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Abstract
The invention discloses a vacuum micro-electronics pressure sensor, comprising a silicon micro-field emission cathode cone tip array, a vacuum micro-cavity, an insulating layer, an anode elastic film, an anode insulating protective film, an extraction electrode, an overload protecting ring, a diamond film and an insulating substrate. The vacuum micro-electronics pressure sensor is characterized in that the anode elastic film is provided with anode piston films connected into a whole and a support pillar in the middle part facing to one side of the vacuum micro-cavity, and the support pillar is opposite to the overload protecting ring. The vacuum micro-electronics pressure sensor adopts a pressure sensor with a double-layer film structure according to an ideal of detachable functions. Compared with the conventional vacuum micro-electronics pressure sensor, the sensitivity of the vacuum micro-electronics pressure sensor is improved by 100-300 percent in comparison with the conventional vacuum micro-electronics pressure sensor; and because the support pillar with the structure corresponds to the overload protecting ring, the vacuum micro-electronics pressure sensor prevents permanent deformation caused by contacting the anode piston films and the overload protecting ring, thereby being beneficial to the long-period stable operation of the sensor.
Description
Technical field
The present invention relates to a kind of pressure transducer, particularly a kind of vacuum micro-electronics pressure sensor, the field that it is used is the pressure transducer manufacturing in micromechanics electronics (MEMS) field.
Background technology
Vacuum micro-electronics pressure sensor is gone up early than the 6th solid state sensors in 1991 and actuator international conference (InternationalConference on Solid-State Sensors, Actuators and Microsystems) and is proposed.The principle of work of microelectronic vacuum sensor is that the anode of sensor applies positive voltage with respect to the negative electrode of sensor, forms accelerating field at cathode surface.When anode elastic membrane compressive deformation, the spacing between the anode and cathode of sensor changes, and the cathode surface field intensity changes thereupon, thereby causes the emission of cathode electric current to change.
Chinese patent literature 1 (number of patent application: 02204492, patent name: vacuum micro-electronics pressure sensor) disclose a kind of vacuum micro-electronics pressure sensor, its structure is as shown in Figure 1.The principal feature of its sensor is: by loading overload protection ring 11a, solved the overload protection of sensor and the problem of long-time stability.But when its anode elastic membrane 3a is under pressure, the anode elastic membrane will produce camber deformation, i.e. the center section deformation maximum of anode elastic membrane, and more little the closer to edge deformation, as shown in Figure 3, cause the sensitivity of pressure transducer significantly to reduce.
Summary of the invention
The purpose of this invention is to provide a kind of vacuum micro-electronics pressure sensor, by adopting a kind of new double membrane structure, the problem that significantly reduces with the sensitivity that overcomes pressure transducer.
The technical scheme that the present invention solves the problems of the technologies described above is; a kind of vacuum micro-electronics pressure sensor; comprise: the little field-emissive cathode of silicon is bored sharp array 9, vacuum micro chamber 7, insulation course 6, anode elastic membrane 3, anodized insulation diaphragm 2, extraction electrode 1, overload protection ring 11, diamond film 8 and dielectric substrate 10; it is characterized in that; at the middle part of described anode elastic membrane 3 towards vacuum micro chamber 7 one sides; the anode piston membrane 5 and the support column 4 thereof that fuse are arranged, and support column 4 is relative with overload protection ring 11.
Has the gap d that can make the 5 easy on and off activities of anode piston membrane between the inwall of described anode piston membrane 5 and vacuum micro chamber 7.
The width of described anode piston membrane 5 covers the described silicon little field-emissive cathode relative with it fully and bores sharp array 9, and described anode piston membrane 5 and the little field-emissive cathode of described silicon are bored the initial separation X between the sharp array 9
0Must be greater than electrostatic suction shift value X
iWith expectation emission spacing X
qSum, i.e. X
0＞(X
i+ X
q).
It is corresponding with described overload protection ring 11 that 4 position is leant in described support, promptly supports 4 the center that is connected in anode elastic membrane 3 and anode piston membrane 5 up and down respectively of leaning on, and overload protection ring 11 is positioned at the center that the little field-emissive cathode of silicon is bored sharp array 9.
Described anode piston membrane 5 and described support column 4 thereof have same material with described anode elastic membrane 3, are silicon.
The thickness of described support column 4 is 5 μ m ± 0.5 μ m, and the thickness of described anode piston membrane 5 is 10 μ m ± 0.5 μ m, and the gap d between described anode piston membrane 5 and described vacuum micro chamber 7 inwalls is 5 μ m ± 2 μ m.
Beneficial effect:
The present invention has adopted the pressure transducer with double membrane structure according to the thought that function splits, and compares with the vacuum micro-electronics pressure sensor of routine, and vacuum micro-electronics pressure sensor of the present invention has following characteristics:
1. the structure of the duplicature of structure of the present invention makes that the anode elastic membrane function of sensor is split, and promptly it contains anode elastic membrane (the largest deformation amount with position in the middle of it reflects that pressure changes) and anode piston membrane (thereby changing anode and cathode spacing change emission of cathode electric current with the parallel amount of movement of its integral body).Be positioned at the middle part of anode elastic membrane owing to anode piston membrane and the support column that the anode elastic membrane is connected mutually, it is the deformation maximum position of anode elastic membrane arc deformation when being stressed herein, so this moment, anode elastic membrane deformation quantity effective value was the maximal value of the anode elastic membrane deformation of conventional pressure transducer, rather than in the design of conventional vacuum micro-electronics pressure sensor with the integration amount of its arc deformation as effective value.Autoelectronic current J=AE
2e
-B/E, wherein, A, B, e are constant, and E=V/D can be similar to and think that the distance that autoelectronic current and anode piston membrane and negative electrode are bored between the sharp array is inversely proportional to.If the spacing that anode piston membrane and negative electrode are bored between sharp array is changed to 20 μ m by 50 μ m, anode piston membrane width is 1000 μ m, then can calculate, the output current variable quantity of structure of the present invention is 5 times of output current variable quantity of conventional structure, thereby the sensitivity that makes vacuum micro-electronics pressure sensor of the present invention improves 100～300% than the vacuum micro-electronics pressure sensor of routine.
2. the support column of structure of the present invention and overload protection ring is mutual corresponding.When overload; anode piston membrane stress point is positioned at the part that is connected with support column in the middle of the piston membrane; power is passed to the anode elastic membrane, prevented that anode piston membrane and overload protection ring from touching and the deformation set that causes, thereby very help the long-term stable operation of sensor.
Description of drawings
Fig. 1 is the horizontal section structural representation of the vacuum micro-electronics pressure sensor of routine;
Fig. 2 is the horizontal section structural representation of vacuum pressure microelectronic sensor of the present invention.
The synoptic diagram of the anode elastic membrane arc deformation when Fig. 3 is stressed for conventional vacuum micro-electronics pressure sensor.
The parallel mobile synoptic diagram of anode piston membrane when Fig. 4 is stressed for vacuum pressure microelectronic sensor of the present invention.
Among Fig. 2; the 1st, extraction electrode, the 2nd, anodized insulation diaphragm, the 3rd, anode elastic membrane, the 4th, support column, the 5th, anode piston membrane, the 6th, insulation course, the 7th, vacuum micro chamber, the 8th, diamond film, the 9th, the little field-emissive cathode of silicon is bored sharp array, the 10th, dielectric substrate, the 11st, overload protection ring, the 12nd, silicon substrate, d are the gap that can make the 5 easy on and off activities of anode piston membrane between the inwall of anode piston membrane 5 and vacuum micro chamber 7.
Embodiment
The specific embodiment of the present invention is not limited only to following description.Below in conjunction with accompanying drawing the inventive method is further specified.
The horizontal section structural representation of vacuum pressure microelectronic sensor of the present invention as shown in Figure 2; comprise that the little field-emissive cathode of silicon bores sharp array 9, vacuum micro chamber 7, insulation course 6, anode elastic membrane 3, anodized insulation diaphragm 2, anode piston membrane 5, extraction electrode 1, overload protection ring 11 and diamond film 8; wherein, be formed with the support column 4 of anode elastic membrane 3 identical silicon materials towards the middle part of vacuum micro chamber 7 one side and be connected the anode piston membrane 5 on support column top in described anode elastic membrane 3.
Described anode piston membrane 5 is as the anode receiving unit of sensor, has up and down gap d between anode piston membrane 5 and vacuum micro chamber 7 inwalls, the width of anode piston membrane 5 covered the whole silicon little field-emissive cathode relative with it and bored sharp array 9, and the little field-emissive cathode of anode piston membrane and silicon is bored the initial separation X between the sharp array 9
0Must be greater than electrostatic suction displacement X
iAdd expectation emission spacing X
q, i.e. X
0＞(X
i+ X
q).
The principle of work of this structure: the little field-emissive cathode of anode piston membrane 5 relative silicon is bored sharp array 9 and is applied certain positive voltage, negative electrode is bored between sharp array 9 (being the negative electrode of sensor) and the anode piston membrane 5 (being the anode of sensor) will form electric field, when the electric field of boring sharp array 9 when negative electrode reaches certain intensity, electronics will overcome surface barrier and overflow, collected by anode piston membrane 5, thereby form electric current.When the voltage constant between negative electrode and the anode, elastic membrane 3 is applied certain pressure, and deformation will take place in elastic membrane, and the distance between negative electrode awl point and the anode piston membrane 5 is changed, the electric field that causes the sharp near surface of awl changes, thereby the electric current between negative electrode and the anode is changed.The variation of the electric current by measuring negative electrode and anode can measure the deformation of elastic membrane 3 and the size of the pressure that is subjected to, and its direct output quantity is a current signal.
Owing to designed piston membrane support column 4 and anode piston membrane 5 with anode elastic membrane 3 one, when anode elastic membrane 3 is subjected to certain pressure, produce certain deformation, driving anode piston membrane 5 integral body by piston membrane support column 4 moves down, the effective variable quantity of spacing that makes the little field-emissive cathode of anode piston membrane 5 and silicon bore between the sharp array 9 improves greatly, therefore, the sensitivity of pressure transducer is greatly improved.
The MEMS technology that vacuum micro-electronics pressure sensor of the present invention adopts conventional IC technology to combine with deep trouth burn into silicon/silicon bonding.The manufacture craft flow process of microelectronic vacuum sensor of the present invention is specific as follows:
1. the little field-emissive cathode of silicon is bored the making of sharp array 9
1) select N type (100) Si monocrystalline for use, resistivity is 1～5 Ω cm;
2) chemical cleaning and oxidation, oxidated layer thickness 500nm ± 50nm;
3) the photoetching negative electrode is bored sharp array area;
4) dry etching SiO
2And Si, the corrosion depth of Si is 2 μ m ± 0.1 μ m;
5) remove photoresist;
6) clean oxidation;
7) deposit Si
3O
4
8) the overload protection ring 11 in the middle of the photoetching;
8) Si in district between the corrosion awl
3O
4
9) the photoetching negative electrode is bored sharp array;
10) dry etching SiO
2, erode away the awl point;
11) dry etching and wet etching combine, and form the sharp thickness 2 μ m of awl, and topside area is less than the awl point of 1 * 1 μ m;
12) cleaning → dried oxygen+wet oxygen+dried oxygen (950 ℃) will be bored point and further be dwindled, and remove oxide layer, and acquisition height 2 μ m, sharp degree are bored sharp array 9 less than the little field-emissive cathode of the silicon of 0.3 μ m;
13) depositing diamond film;
2. the preparation flow of anode piston membrane 5 and support column 4
1) select N type (100) Si monocrystalline for use, resistivity is 1～5 Ω cm;
2) chemical cleaning and oxidation, oxidated layer thickness 1 μ m;
3) photoetching support column;
4) dry etching SiO
2And Si, form the high Si support column 4 of 5 μ m;
5) LPCVD deposit polysilicon, thickness are about 6 μ m;
6) the CMP polishing obtains flat surface;
7) more described N type Si monocrystalline silicon piece is carried out silicon/silicon bonding with another one N type (100) Si monocrystalline (resistivity is 1～5 Ω cm);
8) attenuated polishing obtains the silicon thin film (10 μ m ± 0.5 μ m) of anode piston membrane thickness;
9) photoetching anode piston membrane district;
10) dry etching silicon thin film forms anode piston membrane 5;
11) remove photoresist;
12) adopt HF+HNO
3+ H
2The mixed liquor of O (1: 1: 10) corrosion sacrifice layer obtains to have support column and supports movably anode piston membrane.
3. vacuum micro-electronics pressure sensor preparation flow
1) movable anode piston membrane 5 and negative electrode are bored sharp array 9 (HF: H in HF solution
2O=1: 20) corrosion is 2 minutes, ethanol dehydration;
2) immediately movable anode piston membrane 5 and negative electrode are bored sharp array 9 and aim at up and down, carry out silicon/silicon bonding, form the vacuum micro chamber of vacuum micro-electronics pressure sensor;
3) attenuated polishing, obtaining required stress film is anode elastic membrane 5 (thickness 10 μ m);
4) deposit SiO
2, thickness 1 μ m, lithography fair lead;
5) tow sides sputter SiCrAu, SiCr are as adhesion layer, and their thickness is SiCr/SiCrAu:20nm/80nm;
6) the positive lead-in wire of photoetching;
5) alloy;
6) scribing obtains vacuum micro-electronics pressure sensor.
Oxidation in the inventive method, photoetching, burn into remove photoresist, cleaning, deposit etc. are those skilled in the art's common process technology, and theme that neither the inventive method is not described in detail in this.
Claims (6)
1. vacuum micro-electronics pressure sensor; comprise: the little field-emissive cathode of silicon is bored sharp array (9), vacuum micro chamber (7), insulation course (6), anode elastic membrane (3), anodized insulation diaphragm (2), extraction electrode (1), overload protection ring (11), diamond film (8) and dielectric substrate (10); it is characterized in that; at the middle part of described anode elastic membrane (3) towards vacuum micro chamber (7) one side; the anode piston membrane (5) and the support column (4) thereof that fuse are arranged, and support column (4) is relative with overload protection ring (11).
2. vacuum micro-electronics pressure sensor according to claim 1 is characterized in that: have the gap d that can make anode piston membrane (5) easy on and off activity between the inwall of described anode piston membrane (5) and vacuum micro chamber (7).
3. vacuum micro-electronics pressure sensor according to claim 1, it is characterized in that: the width of described anode piston membrane (5) covers the described silicon little field-emissive cathode relative with it fully and bores sharp array (9), and described anode piston membrane (5) and the little field-emissive cathode of described silicon are bored the initial separation X between the sharp array (9)
0Must be greater than electrostatic suction shift value X
iWith expectation emission spacing X
qSum, i.e. X
0＞(X
i+ X
q).
4. vacuum micro-electronics pressure sensor according to claim 1; it is characterized in that: it is corresponding with described overload protection ring (11) that the position of (4) is leant in described support; promptly support the center that is connected in anode elastic membrane (3) and anode piston membrane (5) up and down respectively of leaning on (4), overload protection ring (11) is positioned at the center that the little field-emissive cathode of silicon is bored sharp array (9).
5. vacuum micro-electronics pressure sensor according to claim 1 is characterized in that: described anode piston membrane (5) and described support column (4) thereof have same material with described anode elastic membrane (3), are silicon.
6. vacuum micro-electronics pressure sensor according to claim 1, it is characterized in that: the thickness of described support column (4) is 5 μ m ± 0.5 μ m, the thickness of described anode piston membrane (5) is 10 μ m ± 0.5 μ m, and the gap d between described anode piston membrane (5) and described vacuum micro chamber (7) inwall is 5 μ m ± 2 μ m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010042063A CN101762356A (en) | 2010-01-15 | 2010-01-15 | Vacuum micro-electronics pressure sensor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010042063A CN101762356A (en) | 2010-01-15 | 2010-01-15 | Vacuum micro-electronics pressure sensor |
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| CN101762356A true CN101762356A (en) | 2010-06-30 |
Family
ID=42493650
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102928153A (en) * | 2012-11-20 | 2013-02-13 | 中国科学院上海微系统与信息技术研究所 | Three-dimensional vacuum sensor and preparation method of three-dimensional vacuum sensor |
| CN110366090A (en) * | 2018-04-11 | 2019-10-22 | 中芯国际集成电路制造(上海)有限公司 | MEMS device and preparation method thereof |
-
2010
- 2010-01-15 CN CN201010042063A patent/CN101762356A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102928153A (en) * | 2012-11-20 | 2013-02-13 | 中国科学院上海微系统与信息技术研究所 | Three-dimensional vacuum sensor and preparation method of three-dimensional vacuum sensor |
| CN102928153B (en) * | 2012-11-20 | 2014-10-22 | 中国科学院上海微系统与信息技术研究所 | Three-dimensional vacuum sensor and preparation method of three-dimensional vacuum sensor |
| CN110366090A (en) * | 2018-04-11 | 2019-10-22 | 中芯国际集成电路制造(上海)有限公司 | MEMS device and preparation method thereof |
| CN110366090B (en) * | 2018-04-11 | 2021-02-23 | 中芯国际集成电路制造(上海)有限公司 | MEMS device and preparation method thereof |
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Open date: 20100630 |