CN101760773B - Monocrystal-pulling insulated feeding method and device thereof - Google Patents
Monocrystal-pulling insulated feeding method and device thereof Download PDFInfo
- Publication number
- CN101760773B CN101760773B CN 201010301244 CN201010301244A CN101760773B CN 101760773 B CN101760773 B CN 101760773B CN 201010301244 CN201010301244 CN 201010301244 CN 201010301244 A CN201010301244 A CN 201010301244A CN 101760773 B CN101760773 B CN 101760773B
- Authority
- CN
- China
- Prior art keywords
- graphite
- heat insulation
- thermal field
- lid
- external diameter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 201010301244 CN101760773B (en) | 2010-02-04 | 2010-02-04 | Monocrystal-pulling insulated feeding method and device thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 201010301244 CN101760773B (en) | 2010-02-04 | 2010-02-04 | Monocrystal-pulling insulated feeding method and device thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101760773A CN101760773A (en) | 2010-06-30 |
CN101760773B true CN101760773B (en) | 2011-11-09 |
Family
ID=42492144
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN 201010301244 Active CN101760773B (en) | 2010-02-04 | 2010-02-04 | Monocrystal-pulling insulated feeding method and device thereof |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN101760773B (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102212873A (en) * | 2011-05-20 | 2011-10-12 | 浙江星宇能源科技有限公司 | Method for charging mono-crystal furnace |
CN109097822B (en) * | 2018-09-29 | 2020-11-03 | 包头美科硅能源有限公司 | Method for reducing carbon content in single crystal ingot |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1417386A (en) * | 2001-11-01 | 2003-05-14 | 北京有色金属研究总院 | Heat shielding method and heat shield for vertically pulling crystal furnace |
CN1500918A (en) * | 2002-11-12 | 2004-06-02 | 王永鸿 | Growth apparatus for vertical pulling single crystal |
CN201351185Y (en) * | 2009-02-05 | 2009-11-25 | 嘉兴嘉晶电子有限公司 | Single crystal furnace thermal field batching feeding device |
-
2010
- 2010-02-04 CN CN 201010301244 patent/CN101760773B/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1417386A (en) * | 2001-11-01 | 2003-05-14 | 北京有色金属研究总院 | Heat shielding method and heat shield for vertically pulling crystal furnace |
CN1500918A (en) * | 2002-11-12 | 2004-06-02 | 王永鸿 | Growth apparatus for vertical pulling single crystal |
CN201351185Y (en) * | 2009-02-05 | 2009-11-25 | 嘉兴嘉晶电子有限公司 | Single crystal furnace thermal field batching feeding device |
Non-Patent Citations (2)
Title |
---|
JP平2-283693A 1990.11.21 |
JP昭55-113693A 1980.09.02 |
Also Published As
Publication number | Publication date |
---|---|
CN101760773A (en) | 2010-06-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP2356268B1 (en) | Methods for preparing a melt of silicon powder for silicon crystal growth | |
US20110097256A1 (en) | Method for preparing high-purity metallurgical-grade silicon | |
JP5604803B2 (en) | Polymer deactivation method in polycrystalline silicon production equipment | |
CN101545135B (en) | Method for preparing and purifying solar grade silicon crystal | |
US20120171848A1 (en) | Method and System for Manufacturing Silicon and Silicon Carbide | |
CN101760773B (en) | Monocrystal-pulling insulated feeding method and device thereof | |
JP2023509531A (en) | Hot zone structure of single crystal furnace, single crystal furnace and crystal bar | |
CN102181925A (en) | Growth process and device for growing IC-level silicon single crystal with low Fe content by czochralski method | |
CN100415945C (en) | Method of improving life of straight pulling silicon single crystal furnace thermal field component and single crystal furnace | |
CN108103575A (en) | A kind of preparation method and its device of low stress single-crystal silicon carbide | |
CN101651101A (en) | Silicon carbide ion activation annealing device and silicon carbide ion activation annealing method | |
CN202595325U (en) | Gas guide device used for crystalline silicon ingot furnace | |
KR100818220B1 (en) | Method to manufacture ionized calcium product out of shell | |
CN106591951B (en) | The restoring method of lithium tantalate wafer | |
CN202107794U (en) | Polycrystalline furnace with detective device for preventing accidental fire striking | |
CN101362602A (en) | Purification processing method for drawing casting ingot cleaved bark slat and head material | |
CN208517577U (en) | A kind of semiconductor silicon single crystal furnace with concealed heater | |
CN208594346U (en) | A kind of double induction molybdenum crucible method of crystal growth by crystal pulling devices | |
CN109097822A (en) | A kind of carbon content method reduced in monocrystalline crystal bar | |
CN102452651A (en) | Process for removing boron impurity out of silicon by utilizing wet argon plasma | |
JP5776587B2 (en) | Single crystal manufacturing method | |
CN102794281B (en) | Method for washing graphite piece in thermal field of Czochralski single-crystal furnace | |
JP6617680B2 (en) | Silicon single crystal pulling device | |
JP2013147406A (en) | Method for producing silicon single crystal | |
JP5979664B2 (en) | Silicon crystal casting furnace |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Yinchuan LONGi Silicon Material Co.,Ltd. Assignor: Xi'an longI silicon materials Limited by Share Ltd| Xi'an longI silicon technology limited company| Ningxia longI silicon materials Co., Ltd.| Xi'an Ximei monocrystalline silicon Contract record no.: 2012610000005 Denomination of invention: Monocrystal-pulling insulated feeding method and device thereof Granted publication date: 20111109 License type: Exclusive License Open date: 20100630 Record date: 20120119 |
|
ASS | Succession or assignment of patent right |
Owner name: NINGXIA LONGI SILICON MATERIAL CO.,LTD. Free format text: FORMER OWNER: XI AN LONGJI-SILICON CO., LTD. Effective date: 20140829 Free format text: FORMER OWNER: XIAN LONGI SILICON MATERIALS CORP. NINGXIA LONGI SILICON MATERIAL CO.,LTD. XI AN XIMEI MONOCRYSTALLINE SILICON CO., LTD. Effective date: 20140829 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 710100 XI AN, SHAANXI PROVINCE TO: 755100 ZHONGWEI, NINGXIA HUI AUTONOMOUS REGION |
|
TR01 | Transfer of patent right |
Effective date of registration: 20140829 Address after: The new town in the county the Ningxia Hui Autonomous Region city centre 755100 unity Road Patentee after: Ningxia LONGi Silicon Material Co.,Ltd. Address before: 710100 Changan District, Shaanxi Province, aerospace Road, No. 388, No. Patentee before: Xi'an Longji-Silicon Co., LTD. Patentee before: Xian Longi Silicon Materials Corp. Patentee before: Ningxia LONGi Silicon Material Co.,Ltd. Patentee before: Xi'an Ximei Monocrystalline Silicon Co., Ltd. |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20160922 Address after: 100053 Beijing city Xicheng District Baiguang road two No. 12 Patentee after: CHINA THREE GORGES NEW ENERGY CO., LTD. Address before: The new town in the county the Ningxia Hui Autonomous Region city centre 755100 unity Road Patentee before: Ningxia LONGi Silicon Material Co.,Ltd. |