CN101752506A - Method for adorning organic field effect transistor bottom electrode - Google Patents
Method for adorning organic field effect transistor bottom electrode Download PDFInfo
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- CN101752506A CN101752506A CN200810240083A CN200810240083A CN101752506A CN 101752506 A CN101752506 A CN 101752506A CN 200810240083 A CN200810240083 A CN 200810240083A CN 200810240083 A CN200810240083 A CN 200810240083A CN 101752506 A CN101752506 A CN 101752506A
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- hearth electrode
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Abstract
The invention discloses a method for adorning an organic field effect transistor bottom electrode, which comprises the following steps: an insulation medium film is thermally oxidized and grown on a conductive substrate; an anticorrosive agent is coated on the surface of the insulation medium film, and a bottom electrode adhesive graph is obtained in a photo-etching way; a layer of organic semi-conductor materials is vacuum evaporated; a layer of metal film is evaporated on the surface of the organic semi-conductor material through the evaporation of an electronic beam; photo-etching adhesive is stripped by acetone to complete the schematization of the bottom electrode; and the organic semi-conductor material is vacuum evaporated to complete the production of the part. The channel semi-conductor material is adopted to adorn the bottom electrode, so the contact potential difference between the electrode and the channel material can be reduced. The organic semi-conductor material for adorning is obtained in a vacuum vapor deposition way, and the organic semi-conductor material which is obtained through the vacuum vapor deposition way has better physical appearance and better chemical properties compared with that which is obtained through a liquid phase method. In addition, the process of the method is simpler, and no complicated process is added.
Description
Technical field
The present invention relates to the Micrometer-Nanometer Processing Technology field in organic semiconductor, particularly a kind of method that in being manufactured with field effect transistors, is modified with the field effect transistors hearth electrode.
Background technology
Along with deepening continuously of information technology, electronic product has entered each link of people's life and work; People are increasing to the demand of low cost, flexibility, low weight, portable electronic product in daily life; Traditional device and circuit based on inorganic semiconductor material are difficult to satisfy these requirements, and the organic microelectric technique based on the organic polymer semi-conducting material that therefore can realize these characteristics has obtained people and more and more paid close attention under this trend.
The performance that improves organic field-effect tube is the target that pursue in this field always, and except material and technology had a significant impact the performance of organic field effect tube, the influence of device architecture also can not be ignored.Organic field effect tube generally adopts top electrode or bottom electrode (being also referred to as hearth electrode) structure.Good performance is arranged upper electrode arrangement but preparation process need be used the bushing patterned electrodes and application prospect is restricted, and therefore, general organic integration circuit all is to adopt bottom electrode structural.Though but bottom electrode structural has electrode and circuit layout to process simply and easily outside the advantage, its electric property is relatively poor also to be a problem demanding prompt solution.What influence the hearth electrode performance mainly is the contact problems of electrode and semi-conducting material, comprises that contact area is little, the influence of factors such as electrode and semi-conducting material work function difference.
Now the method to the modification of hearth electrode mainly realizes at electrode surface formation metallo-organic complex by electrode and organic complex reaction.But the efficient of this method is not very high, and stains substrate surface easily.Therefore the invention provides a kind of under hearth electrode directly the method for evaporation layer of semiconductor material improve the method that organic substance contacts with electrode.
Summary of the invention
(1) technical problem that will solve
In view of this, main purpose of the present invention is to provide a kind of method that is modified with the field effect transistors hearth electrode, to improve contacting of organic substance and electrode.
(2) technical scheme
For achieving the above object, the invention provides a kind of method that is modified with the field effect transistors hearth electrode, this method comprises:
Step 1, on conductive substrates thermal oxide growth dielectric film;
In the such scheme, conductive substrates described in the step 1 is the low electric conducting material of resistivity, is used for the grid as organic field-effect tube.
In the such scheme, described in the step 1 on conductive substrates thermal oxide growth dielectric film be to adopt thermal oxide growth method or chemical gaseous phase depositing process to realize.
In the such scheme, organic semiconducting materials described in the step 3 is to adopt the method for vacuum evaporation to obtain as decorative layer.
In the such scheme, organic semiconducting materials described in the step 3 is as decorative layer, and its thickness is 30nm, and thinner than channel semiconductor layer.
In the such scheme, metallic film described in the step 4 obtains by electron beam evaporation as the hearth electrode metal.
In the such scheme, graphically the realizing of hearth electrode described in the step 5 by photoetching.
In the such scheme, the organic semiconducting materials of vacuum evaporation described in the step 6 adopts the method for vacuum thermal evaporation to realize that the thickness of this organic semiconducting materials is 50nm.
(3) beneficial effect
From technique scheme as can be seen, the present invention has following beneficial effect:
This method that is modified with the field effect transistors hearth electrode provided by the invention adopts channel semiconductor material itself to the modification of hearth electrode, and this has reduced the contact potential difference between electrode and the channel material.The organic semiconducting materials of modifying usefulness uses the mode of vacuum evaporation to obtain, and the organic semiconducting materials that vacuum evaporation obtains has better physics pattern with respect to liquid phase method so that electric property.In addition, the technical process of this method is also fairly simple, does not increase complicated technology.
Description of drawings
Fig. 1 is the method flow diagram that is modified with the field effect transistors hearth electrode provided by the invention;
Fig. 2-1 is to Fig. 2-the 7th, the process chart that is modified with the field effect transistors hearth electrode provided by the invention;
Fig. 3-1 is to Fig. 3-the 7th, the process chart that is modified with the field effect transistors hearth electrode that provides according to the embodiment of the invention.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
This method that is modified with the field effect transistors hearth electrode provided by the invention adds the organic semiconducting materials of one deck vacuum evaporation between electrode and gate dielectric layer.Thereby this layer semi-conducting material reduced the Contact Effect augmented performance between bottom electrode and the semiconductor layer material.It is by before the evaporation bottom electrode earlier on gate medium by vacuum evaporation skim organic semiconducting materials, follow that evaporation metal bottom electrode in the above realizes.
As shown in Figure 1, Fig. 1 is the method flow diagram that is modified with the field effect transistors hearth electrode provided by the invention, and this method comprises:
Step 1, on conductive substrates thermal oxide growth dielectric film.Conductive substrates is the low electric conducting material of resistivity, is used for the grid as organic field-effect tube.Thermal oxide growth dielectric film is to adopt thermal oxide growth method or chemical gaseous phase depositing process to realize on conductive substrates.
Fig. 2-1 is to Fig. 2-the 7th, and the process chart that is modified with the field effect transistors hearth electrode provided by the invention specifically comprises:
Shown in Fig. 2-1, adopt the technology of thermal oxide growth or the method for chemical vapour deposition (CVD) to prepare the dielectric substance layer film on the conductive substrates surface.
Shown in Fig. 2-2,, carry out preceding baking with hot plate or baking oven at dielectric laminar surface spin coating photoresist.
Shown in Fig. 2-3, the figure of hearth electrode is leaked in exposure, the acquisition source, back of developing, and method comprises optical lithography or electron beam lithography.
Shown in Fig. 2-4, use method evaporation one deck organic semiconducting materials on the photoresist of electrode patternization of vacuum evaporation.
Shown in Fig. 2-5, make deposited by electron beam evaporation or PECVD at the thick metallic film of regrowth one deck 50nm.
Shown in Fig. 2-6, the slice, thin piece that has steamed metal is with an organic solvent peeled off photoresist, the hearth electrode figure after modification is finished on the dielectric surface.
Shown in Fig. 2-7, last vacuum evaporation organic semiconductor thin-film is again finished the making of the organic field effect tube of hearth electrode modification.It shown in Fig. 2-7 vertical view of device.
Fig. 3-1 is to Fig. 3-the 7th, and the process chart that is modified with the field effect transistors hearth electrode according to the embodiment of the invention provides specifically comprises:
Shown in Fig. 3-1, adopt the technology of thermal oxide growth to prepare the silica dioxide medium layer film in surface of silicon.
Shown in Fig. 3-2,, carry out preceding baking with hot plate or baking oven at silica surface spin coating AZ9918 photoresist.
Shown in Fig. 3-3, after developing, optical exposure obtains the figure that hearth electrode is leaked in the acquisition source.
As shown in Figure 3-4, with the method evaporation one deck 30nm thick organic semiconducting materials CuPc of the photoresist surface after developing by vacuum evaporation
Shown in Fig. 3-5, the then gold thin film behind mode evaporation one deck 50nm of deposited by electron beam evaporation again after having steamed CuPc.
Shown in Fig. 3-6, use acetone and ethanol to peel off photoresist, the hearth electrode figure after modification is finished on the dielectric surface to the slice, thin piece that has steamed gold thin film.
Shown in Fig. 3-7, vacuum evaporation phthalein mountain valley with clumps of trees and bamboo copper film is finished the making of the organic field effect tube of hearth electrode modification again.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (8)
1. a method that is modified with the field effect transistors hearth electrode is characterized in that, this method comprises:
Step 1, on conductive substrates thermal oxide growth dielectric film;
Step 2, on the dielectric film surface spin-coating erosion resistant agent, photoetching obtains the hearth electrode glue pattern;
Step 3, vacuum evaporation one deck organic semiconducting materials;
Step 4, by electron beam evaporation at organic semiconducting materials surface evaporation layer of metal film;
Step 5, peel off photoresist with acetone and finish the graphical of hearth electrode;
Step 6, vacuum evaporation organic semiconducting materials are finished the making of device.
2. the method that is modified with the field effect transistors hearth electrode according to claim 1 is characterized in that, conductive substrates described in the step 1 is the low electric conducting material of resistivity, is used for the grid as organic field-effect tube.
3. the method that is modified with the field effect transistors hearth electrode according to claim 1 is characterized in that, described in the step 1 on conductive substrates thermal oxide growth dielectric film be to adopt thermal oxide growth method or chemical gaseous phase depositing process to realize.
4. the method that is modified with the field effect transistors hearth electrode according to claim 1 is characterized in that, organic semiconducting materials described in the step 3 is to adopt the method for vacuum evaporation to obtain as decorative layer.
5. the method that is modified with the field effect transistors hearth electrode according to claim 1 is characterized in that, organic semiconducting materials described in the step 3 is as decorative layer, and its thickness is 30nm, and thinner than channel semiconductor layer.
6. the method that is modified with the field effect transistors hearth electrode according to claim 1 is characterized in that metallic film described in the step 4 obtains by electron beam evaporation as the hearth electrode metal.
7. the method that is modified with the field effect transistors hearth electrode according to claim 1 is characterized in that, graphically the realizing by photoetching of hearth electrode described in the step 5.
8. the method that is modified with the field effect transistors hearth electrode according to claim 1 is characterized in that, the organic semiconducting materials of vacuum evaporation described in the step 6 adopts the method for vacuum thermal evaporation to realize that the thickness of this organic semiconducting materials is 50nm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN200810240083A CN101752506A (en) | 2008-12-17 | 2008-12-17 | Method for adorning organic field effect transistor bottom electrode |
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| CN200810240083A CN101752506A (en) | 2008-12-17 | 2008-12-17 | Method for adorning organic field effect transistor bottom electrode |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102655212A (en) * | 2011-03-02 | 2012-09-05 | 中国科学院微电子研究所 | Organic field-effect-transistor structure and preparation method thereof |
| CN113390931A (en) * | 2021-05-28 | 2021-09-14 | 苏州锐光科技有限公司 | Upper electrode material for capacitive humidity sensor and preparation method thereof |
-
2008
- 2008-12-17 CN CN200810240083A patent/CN101752506A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102655212A (en) * | 2011-03-02 | 2012-09-05 | 中国科学院微电子研究所 | Organic field-effect-transistor structure and preparation method thereof |
| CN113390931A (en) * | 2021-05-28 | 2021-09-14 | 苏州锐光科技有限公司 | Upper electrode material for capacitive humidity sensor and preparation method thereof |
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Open date: 20100623 |