CN101783363A - Organic bipolar transistor and preparation method thereof - Google Patents
Organic bipolar transistor and preparation method thereof Download PDFInfo
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- CN101783363A CN101783363A CN200910077520A CN200910077520A CN101783363A CN 101783363 A CN101783363 A CN 101783363A CN 200910077520 A CN200910077520 A CN 200910077520A CN 200910077520 A CN200910077520 A CN 200910077520A CN 101783363 A CN101783363 A CN 101783363A
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Abstract
The invention discloses an organic bipolar transistor and a preparation method thereof. The organic bipolar transistor comprises an insulating substrate, a collector layer, a base layer, an emitter layer, a base contact electrode layer, an emitter contact electrode layer, a collector contact electrode layer, barrier layers, a base electrode, an emitter electrode and a collector electrode, wherein the collector layer is formed on the insulating substrate; the base layer is formed on the collector layer; the emitter layer is formed on the base layer; the base contact electrode layer is formed on the base layer; the emitter contact electrode layer is formed on the emitter layer; the collector contact electrode layer is formed on the collector layer; the barrier layers are formed on the peripheries and the surfaces of the collector layer, the base layer, the emitter layer and the contact electrode layers; the base electrode is formed on the base contact electrode layer; the emitter electrode is formed on the emitter contact electrode layer; and the collector electrode is formed on the collector contact electrode layer. The organic bipolar transistor provided by the invention does not need a dielectric layer any more, simplifies the structure of an organic transistor, also provides the barrier layers, avoids the contact of an organic semiconductor material and the atmosphere and prolongs the service life of the components.
Description
Technical field
The present invention relates to the organic electronic technical field, particularly a kind of organic bipolar transistor and preparation method thereof.
Background technology
Along with deepening continuously of information technology, electronic product has become the necessary part of modern people's life, work; Increasingly extensive along with information technology application, people wish can be whenever and wherever possible acquired information expediently, so people have proposed new characteristic demand to the hardware of information technology: low-cost, flexible, portable.Traditional device and circuit based on inorganic semiconductor material are difficult to satisfy these requirements, and organic electronic can very well be realized these characteristics, so the organic electronic technology has obtained people and more and more pays close attention under this trend.
Based on the development of many decades, organic electronic has progressed into the stage that makes up medium-scale integrated circuit.People have proposed multiple basic device, as resistance, electric capacity, inductance, diode, light-emitting diode, organic solar batteries, organic field effect tube etc.Owing to be subjected to the influence of silicon base CMOS technical development, except light-emitting diode and solar cell, people have been placed on the organic field effect tube the main research energy of organic electronic always, and almost nil to the research work of the transistor---bipolar transistor---of another kind of operation principle.The present invention proposes a kind of organic transistor based on the bipolar transistor operation principle and preparation method thereof.This structure no longer needs dielectric material owing to adopted P type and N type organic semiconductor simultaneously, and structure and manufacture craft that therefore can simplifying transistor provide a kind of effective scheme for realizing low-cost electronics.
Summary of the invention
(1) technical problem that will solve
In order to obtain the lower organic basic device of cost, one object of the present invention is to provide a kind of organic bipolar transistor.
Another object of the present invention is to provide a kind of preparation method of organic bipolar transistor, to simplify processing step, reduces the cost of device preparation.
(2) technical scheme
For achieving the above object, the technical solution used in the present invention is as follows:
A kind of organic bipolar transistor comprises:
Dielectric substrate;
Collector layer is formed on the dielectric substrate;
Base layer is formed on the collector layer;
Emitter layer is formed on the base layer;
Base stage contact electrode layer is formed on the base layer;
Contact electrode layer is formed on the emitter layer;
Emitter contact electrode layer is formed on the collector layer;
The barrier layer is formed on the periphery and surface of collector layer, base layer, emitter layer and contact electrode layer;
Base electrode is formed on the base stage contact electrode layer;
Emitter electrode is formed on the contact electrode layer; And
Collector electrode is formed on the emitter contact electrode layer.
In the such scheme, described dielectric substrate comprises long silicon chip, insulating glass and the ambroin film that silica or insulating silicon nitride film are arranged.
In the such scheme, described collector layer, base layer and emitter layer are organic semiconductor thin-film, and when forming PNP transistor, collector layer and emitter layer are P type organic semiconductor thin-film, and base layer is a N type organic semiconductor thin-film; When forming NPN transistor, collector layer and emitter layer are N type organic semiconductor thin-film, and base layer is a P type organic semiconductor thin-film.
In the such scheme, described contact electrode layer comprises high-work-function metal film and conductive organic matter, and described base electrode, collector electrode, emitter electrode are cheap metal or conductive organic matter.
In the such scheme, described barrier layer is inorganic insulation film or organic insulation film.
A kind of preparation method of organic bipolar transistor, this method comprises:
Step 1: the patterned collector layer of preparation on dielectric substrate;
Step 2: the patterned base layer of preparation on collector layer;
Step 3: the patterned emitter layer of preparation on base layer;
Step 4: the patterned contact electrode layer of preparation on collector layer, base layer and emitter layer;
Step 5: form the barrier layer on the whole sample surface;
Step 6: on the barrier layer, form the electrode via hole;
Step 7: deposition of electrode material forms electrode in the electrode via hole, finishes element manufacturing.
In the such scheme, the film of described collector layer, base layer and emitter layer prepares by the vacuum heat deposition technology, adopts hollowed-out mask to aim at graphical in the process of deposition.
In the such scheme, the layer of contact electrode described in the step 4 prepares by vacuum heat deposition technology, electron beam evaporation technique or sputtering technology, adopts hollowed-out mask to aim at graphical in the process of deposition.
In the such scheme, the preparation method of barrier film described in the step 5 comprises: spin coating, sputter, electron beam deposition and chemical vapour deposition (CVD).
In the such scheme, the preparation of the via hole of electrode described in the step 6 at first adopts photoetching technique to carry out graphically carrying out figure transfer by dry etching technology then.
In the such scheme, the preparation of electrode described in the step 7 at first comes the deposit metal electrodes film by the hot physical deposition of vacuum, electron beam deposition or sputtering technology, perhaps come the sedimentary organic material electrode film by inkjet printing or spin coating technique, go then to finish the preparation of electrode by photoresist beyond the method removal electrode district of peeling off and unnecessary electrode material.
(3) beneficial effect
As can be seen, the present invention has following beneficial effect from technique scheme:
1, this organic bipolar transistor provided by the invention is compared with organic field-effect tube, no longer needs dielectric layer, thereby has simplified the structure of organic transistor.This organic bipolar transistor also provides the barrier layer in addition, has avoided organic semiconducting materials to contact with atmosphere, increases the life-span of device.
2, the preparation method of this organic bipolar transistor provided by the invention has simplified processing step, has reduced the cost of device preparation.
Description of drawings
Fig. 1 is the method flow diagram of preparation organic bipolar transistor provided by the invention;
Fig. 2 is the generalized section according to the positive-negative-positive organic bipolar transistor of a preferred embodiment of the present invention preparation;
Fig. 3-1～Fig. 3-the 7th prepares the schematic diagram of positive-negative-positive organic bipolar transistor according to a preferred embodiment of the present invention.
Wherein: 101-SiO
2Dielectric substrate, 102-P type collector layer, 103-N type base layer, 104-P type emitter layer, 105-auri utmost point contact electrode layer, 106-gold contact electrode layer, 107-gold emitter contact electrode layer, the organic barrier layer of 108-polyvinyl alcohol (PVA), the aluminium base utmost point electrode of 109-, 110-aluminium emitter electrode, 111-aluminium collector electrode.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
As shown in Figure 1, Fig. 1 is the method flow diagram of preparation organic bipolar transistor provided by the invention, and this method comprises:
Step 1: the patterned collector layer of preparation on dielectric substrate;
Step 2: the patterned base layer of preparation on collector layer;
Step 3: the patterned emitter layer of preparation on base layer;
Step 4: the patterned contact electrode layer of preparation on collector layer, base layer and emitter layer;
Step 5: form the barrier layer on the whole sample surface;
Step 6: on the barrier layer, form the electrode via hole;
Step 7: deposition of electrode material forms electrode in the electrode via hole, finishes element manufacturing.
The film of above-mentioned collector layer, base layer and emitter layer prepares by the vacuum heat deposition technology, adopts hollowed-out mask to aim at graphical in the process of deposition.
The contact electrode layer prepares by vacuum heat deposition technology, electron beam evaporation technique or sputtering technology described in the above-mentioned steps 4, adopts hollowed-out mask to aim at graphical in the process of deposition.
The preparation method of barrier film comprises described in the above-mentioned steps 5: spin coating, sputter, electron beam deposition and chemical vapour deposition (CVD).
The preparation of electrode via hole described in the above-mentioned steps 6 at first adopts photoetching technique to carry out graphically carrying out figure transfer by dry etching technology then.
The preparation of electrode described in the above-mentioned steps 7 at first comes the deposit metal electrodes film by the hot physical deposition of vacuum, electron beam deposition or sputtering technology, perhaps come the sedimentary organic material electrode film by inkjet printing or spin coating technique, go then to finish the preparation of electrode by photoresist beyond the method removal electrode district of peeling off and unnecessary electrode material.
Fig. 2 shows the generalized section according to the positive-negative-positive organic bipolar transistor of a preferred embodiment of the present invention preparation, and this positive-negative-positive organic bipolar transistor comprises: length has SiO
2The silicon substrate 101 of insulating barrier; Phthalein mountain valley with clumps of trees and bamboo copper P type collector layer 102 is formed on this dielectric substrate 101; Chloro phthalocyanine tin N type base layer 103 is formed on this collector layer 102; Phthalein mountain valley with clumps of trees and bamboo copper P type emitter layer 104 is formed on this base layer 103; Auri utmost point contact electrode layer 105 is formed on the base layer 103; Gold contact electrode layer 106 is formed on the emitter layer 104; Gold emitter contact electrode layer 107 is formed on the collector layer 102; Polyvinyl alcohol (PVA) barrier layer 108 is formed on the periphery and surface of collector layer 102, base layer 103, emitter layer 104 and contact electrode layer 105; Aluminium base utmost point electrode 109 is formed on the base stage contact electrode layer 105; Aluminium emitter electrode 110 is formed on the contact electrode layer 106; Aluminium collector electrode 111 is formed on the emitter contact electrode layer 107.
Described dielectric substrate 101 includes but not limited to it is long silicon chip, insulating glass and the ambroin film that silica or insulating silicon nitride film are arranged.
Described collector layer 102, base layer 103 and emitter layer 104 are organic semiconductor thin-film, and when forming PNP transistor, collector layer and emitter layer are P type organic semiconductor thin-film, and base layer is a N type organic semiconductor thin-film; When forming NPN transistor, collector layer and emitter layer are N type organic semiconductor thin-film, and base layer is a P type organic semiconductor thin-film.
Described barrier layer 108 is inorganic insulation film or organic insulation film.
Fig. 3-1～Fig. 3-7 shows the schematic diagram for preparing the positive-negative-positive organic bipolar transistor according to a preferred embodiment of the present invention.
With reference to figure 3-1, at first posting the SiO of hollowed-out mask
2Prepare patterned phthalein mountain valley with clumps of trees and bamboo copper P type collector layer 102 by the vacuum heat deposition technology on the dielectric substrate 101;
With reference to figure 3-2, prepare graphical chloro phthalocyanine tin N type base layer 103 by the vacuum heat deposition technology posting on the P type collector layer 102 of hollowed-out mask then;
With reference to figure 3-3, then prepare patterned phthalein mountain valley with clumps of trees and bamboo copper P type emitter 104 by the vacuum heat deposition technology posting on the N type base layer 103 of hollowed-out mask;
With reference to figure 3-4, next step prepares patterned golden contact electrode 105,106 and 107 by the vacuum heat deposition technology posting on the sample surfaces of hollowed-out mask;
With reference to figure 3-5, follow again, deposit polyvinyl alcohol (PVA) barrier layer 108 on the whole sample surface by spin coating technique, make it cover collector electrode, base stage, emitter and contact electrode surface.
With reference to figure 3-6, on polyvinyl alcohol (PVA) barrier layer 108, adopt photoetching technique to prepare the glue pattern of electrode via hole, then by dry etching technology figure transfer in the barrier layer.
With reference to figure 3-7, on patterned barrier layer,, prepare Au electrode 109,110,111 by stripping technology then by electron-beam evaporation Au film, finish the making of device.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (11)
1. an organic bipolar transistor is characterized in that, comprising:
Dielectric substrate;
Collector layer is formed on the dielectric substrate;
Base layer is formed on the collector layer;
Emitter layer is formed on the base layer;
Base stage contact electrode layer is formed on the base layer;
Contact electrode layer is formed on the emitter layer;
Emitter contact electrode layer is formed on the collector layer;
The barrier layer is formed on the periphery and surface of collector layer, base layer, emitter layer and contact electrode layer;
Base electrode is formed on the base stage contact electrode layer;
Emitter electrode is formed on the contact electrode layer; And
Collector electrode is formed on the emitter contact electrode layer.
2. organic bipolar transistor according to claim 1 is characterized in that, described dielectric substrate comprises long silicon chip, insulating glass and the ambroin film that silica or insulating silicon nitride film are arranged.
3. organic bipolar transistor according to claim 1, it is characterized in that, described collector layer, base layer and emitter layer are organic semiconductor thin-film, when forming PNP transistor, collector layer and emitter layer are P type organic semiconductor thin-film, and base layer is a N type organic semiconductor thin-film; When forming NPN transistor, collector layer and emitter layer are N type organic semiconductor thin-film, and base layer is a P type organic semiconductor thin-film.
4. organic bipolar transistor according to claim 1 is characterized in that, described contact electrode layer comprises high-work-function metal film and conductive organic matter, and described base electrode, collector electrode, emitter electrode are cheap metal or conductive organic matter.
5. organic bipolar transistor according to claim 1 is characterized in that, described barrier layer is inorganic insulation film or organic insulation film.
6. the preparation method of an organic bipolar transistor is characterized in that, this method comprises:
Step 1: the patterned collector layer of preparation on dielectric substrate;
Step 2: the patterned base layer of preparation on collector layer;
Step 3: the patterned emitter layer of preparation on base layer;
Step 4: the patterned contact electrode layer of preparation on collector layer, base layer and emitter layer;
Step 5: form the barrier layer on the whole sample surface;
Step 6: on the barrier layer, form the electrode via hole;
Step 7: deposition of electrode material forms electrode in the electrode via hole, finishes element manufacturing.
7. the preparation method of organic bipolar transistor according to claim 6, it is characterized in that, the film of described collector layer, base layer and emitter layer prepares by the vacuum heat deposition technology, adopts hollowed-out mask to aim at graphical in the process of deposition.
8. the preparation method of organic bipolar transistor according to claim 6, it is characterized in that, the layer of contact electrode described in the step 4 prepares by vacuum heat deposition technology, electron beam evaporation technique or sputtering technology, adopts hollowed-out mask to aim at graphical in the process of deposition.
9. the preparation method of organic bipolar transistor according to claim 6 is characterized in that, the preparation method of barrier film described in the step 5 comprises: spin coating, sputter, electron beam deposition and chemical vapour deposition (CVD).
10. the preparation method of organic bipolar transistor according to claim 6 is characterized in that, the preparation of the via hole of electrode described in the step 6 at first adopts photoetching technique to carry out graphically carrying out figure transfer by dry etching technology then.
11. the preparation method of organic bipolar transistor according to claim 6, it is characterized in that, the preparation of electrode described in the step 7 at first comes the deposit metal electrodes film by the hot physical deposition of vacuum, electron beam deposition or sputtering technology, perhaps come the sedimentary organic material electrode film by inkjet printing or spin coating technique, go then to finish the preparation of electrode by photoresist beyond the method removal electrode district of peeling off and unnecessary electrode material.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103021847A (en) * | 2012-11-29 | 2013-04-03 | 中国电子科技集团公司第五十五研究所 | Method for realizing gallium-arsenic-antimony double-heterojunction bipolar transistor base electrode metallization |
| CN103367640A (en) * | 2012-04-03 | 2013-10-23 | 诺瓦莱德公开股份有限公司 | Vertical organic transistor and production method |
| US9147715B2 (en) | 2014-02-19 | 2015-09-29 | International Business Machines Corporation | Hybrid bipolar junction transistor |
| CN106298513A (en) * | 2016-08-31 | 2017-01-04 | 厦门市三安光电科技有限公司 | A kind of HBT manufacture method |
-
2009
- 2009-01-21 CN CN200910077520A patent/CN101783363A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103367640A (en) * | 2012-04-03 | 2013-10-23 | 诺瓦莱德公开股份有限公司 | Vertical organic transistor and production method |
| CN103367640B (en) * | 2012-04-03 | 2017-11-03 | 诺瓦尔德股份有限公司 | Vertical Organic Transistor and production method |
| CN103021847A (en) * | 2012-11-29 | 2013-04-03 | 中国电子科技集团公司第五十五研究所 | Method for realizing gallium-arsenic-antimony double-heterojunction bipolar transistor base electrode metallization |
| CN103021847B (en) * | 2012-11-29 | 2015-03-25 | 中国电子科技集团公司第五十五研究所 | Method for realizing gallium-arsenic-antimony double-heterojunction bipolar transistor base electrode metallization |
| US9147715B2 (en) | 2014-02-19 | 2015-09-29 | International Business Machines Corporation | Hybrid bipolar junction transistor |
| US9508777B2 (en) | 2014-02-19 | 2016-11-29 | International Business Machines Corporation | Hybrid bipolar junction transistor |
| US9812508B2 (en) | 2014-02-19 | 2017-11-07 | International Business Machines Corporation | Hybrid bipolar junction transistor |
| CN106298513A (en) * | 2016-08-31 | 2017-01-04 | 厦门市三安光电科技有限公司 | A kind of HBT manufacture method |
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Open date: 20100721 |