CN101752503B - Manufacturing method of organic field effect transistor with T-shaped channel - Google Patents
Manufacturing method of organic field effect transistor with T-shaped channel Download PDFInfo
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- CN101752503B CN101752503B CN2008102400785A CN200810240078A CN101752503B CN 101752503 B CN101752503 B CN 101752503B CN 2008102400785 A CN2008102400785 A CN 2008102400785A CN 200810240078 A CN200810240078 A CN 200810240078A CN 101752503 B CN101752503 B CN 101752503B
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- raceway groove
- organic field
- field effect
- effect tube
- film
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- 230000005669 field effect Effects 0.000 title claims abstract description 33
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 35
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- 239000000758 substrate Substances 0.000 claims abstract description 11
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 10
- 239000003292 glue Substances 0.000 claims abstract description 8
- 238000000151 deposition Methods 0.000 claims abstract description 7
- 239000002184 metal Substances 0.000 claims abstract description 6
- 229910052751 metal Inorganic materials 0.000 claims abstract description 6
- 238000001259 photo etching Methods 0.000 claims abstract description 6
- 238000004528 spin coating Methods 0.000 claims abstract description 6
- 239000010408 film Substances 0.000 claims description 21
- 238000005229 chemical vapour deposition Methods 0.000 claims description 8
- 239000010409 thin film Substances 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 6
- 238000005566 electron beam evaporation Methods 0.000 claims description 5
- 238000007740 vapor deposition Methods 0.000 claims description 5
- 239000003795 chemical substances by application Substances 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 3
- 230000003628 erosive effect Effects 0.000 claims description 3
- 238000002207 thermal evaporation Methods 0.000 claims description 3
- 230000005684 electric field Effects 0.000 abstract description 13
- 238000002347 injection Methods 0.000 abstract description 10
- 239000007924 injection Substances 0.000 abstract description 10
- 230000009286 beneficial effect Effects 0.000 abstract description 3
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- 238000001704 evaporation Methods 0.000 abstract 1
- 239000003112 inhibitor Substances 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 7
- 239000002800 charge carrier Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
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- 230000000694 effects Effects 0.000 description 2
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- 239000000463 material Substances 0.000 description 2
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- 235000017166 Bambusa arundinacea Nutrition 0.000 description 1
- 235000017491 Bambusa tulda Nutrition 0.000 description 1
- 241001330002 Bambuseae Species 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 235000015334 Phyllostachys viridis Nutrition 0.000 description 1
- 239000011425 bamboo Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
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- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
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- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Abstract
The invention discloses a method for manufacturing an organic field effect transistor with a T-shaped channel, which comprises the following steps: growing an insulating medium film on the conductive substrate; spin-coating a corrosion inhibitor on the surface of the insulating medium film, and photoetching to obtain a bottom electrode glue pattern of the T-shaped channel; evaporating a layer of metal film on the surface of the bottom electrode glue pattern of the T-shaped channel; stripping off the photoresist by using acetone to form a bottom electrode; and depositing an organic semiconductor film to finish the manufacture of the device. The invention generates uneven electric field in the channel by changing the shape of the channel of the device, and the electric field is gradually reduced along the edge of the electrode. Different electric field strengths and changes of the injection direction and the channel direction are beneficial to improving the injection efficiency of carriers, so that the overall performance of the device is improved.
Description
Technical field
The present invention relates to the Micrometer-Nanometer Processing Technology field in organic semiconductor, particularly a kind of manufacture method of organic field effect tube of T shape raceway groove.
Background technology
Along with deepening continuously of information technology, electronic product has got into each link of people's life and work; People are increasing to the demand of low cost, flexibility, low weight, portable electronic product in daily life; Traditional device and circuit based on inorganic semiconductor material are difficult to satisfy these requirements, can realize that therefore the organic microelectric technique based on the organic polymer semi-conducting material of these characteristics has obtained the many concerns of People more and more under this trend.
The performance that improves organic field-effect tube is the target that pursue in this field always, and except material and the technology performance to organic field effect tube has the very big influence, the influence of device architecture also can not be ignored.Present stage mainly is that each layer of device gone up change to the improvement aspect of device architecture, bibliographical information is seldom arranged to the shape change of device electrode.
In fact, in organic field effect tube, the shone influence of effect of the injection process of charge carrier is also very big, and the relation of direction that the effect that shines is injected with raceway groove electric field and charge carrier and direction of an electric field is all relevant.The electrode of the current organic field effect tube that everybody designs all is arranged in parallel, and that is to say that raceway groove is parallel, and electric field strength also is uniformly, this neither one can be selected concerning the injection of charge carrier more effective injection field intensity and direction.Therefore the present invention has designed the bottom electrode structural of non-parallel arrangement, just the organic field effect tube structure of T shape raceway groove.
Summary of the invention
The technical problem that (one) will solve
Main purpose of the present invention is to provide a kind of manufacture method of organic field effect tube of T shape raceway groove, to produce the organic field effect tube of T shape raceway groove.
(2) technical scheme
For achieving the above object, the invention provides a kind of manufacture method of organic field effect tube of T shape raceway groove, this method comprises:
Step 1, the dielectric film of on conductive substrates, growing;
Step 2, on the dielectric film surface spin-coating erosion resistant agent, photoetching obtains the hearth electrode glue pattern of T shape raceway groove;
In the such scheme, conductive substrates described in the step 1 is the low electric conducting material of resistivity, is used for the grid as organic field-effect tube.
In the such scheme, the dielectric film of on conductive substrates, growing described in the step 1 is to adopt the method for thermal oxide growth or the method for chemical vapour deposition (CVD) to realize.
In the such scheme, the metallic film of hearth electrode described in the step 3 is realized through electron beam evaporation.
In the such scheme, hearth electrode described in the step 4 is to adopt non-parallel arrangement, and then causes raceway groove to become T shape.
In the such scheme, the deposition of organic semiconductor thin-film described in the step 5 adopts the method for vacuum thermal evaporation to realize.
(3) beneficial effect
The manufacture method of the organic field effect tube of this T shape raceway groove provided by the invention through changing the shape of device channel, produces uneven electric field in raceway groove, and electric field is prolonging electrode edge and reduces gradually.The variation of different electric field strength and injection direction and channel direction helps improving the injection efficiency of charge carrier.New device architecture effectively improves the distribution of raceway groove internal electric field intensity; Making field intensity prolong electrode edge reduces in the direction perpendicular to raceway groove gradually; The direction of field intensity and sense of current also have certain angle; The influence that suffered injection shone when these injected improving charge carrier in the device, thus the overall performance of device improved.
Description of drawings
Fig. 1 is the method flow diagram of the organic field effect tube of making T shape raceway groove provided by the invention;
Fig. 2-1 is to Fig. 2-the 7th, the process chart of the organic field effect tube of making T shape raceway groove provided by the invention;
Fig. 3-1 is to Fig. 3-the 8th, the process chart of the organic field effect tube of the making T shape raceway groove that provides according to the embodiment of the invention.
Embodiment
For making the object of the invention, technical scheme and advantage clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, to further explain of the present invention.
The method of the organic field effect tube of making provided by the invention T shape raceway groove through changing the shape of device channel, produces uneven electric field in raceway groove, and electric field is prolonging electrode edge and reduces gradually.The variation of different electric field strength and injection direction and channel direction helps improving the injection efficiency of charge carrier.It is through before organic material vapor deposition growth earlier on gate medium through conventional photoetching and the technology deposit layer of metal of peeling off, peel off back formation device hearth electrode, hearth electrode adopts non-parallel arrangement; Making at the bottom of vapor deposition organic semiconducting materials on the medium after the patterned electrodes is accomplished T shape channel organic field-effect transistor then.
As shown in Figure 1, Fig. 1 is the method flow diagram of the organic field effect tube of making T shape raceway groove provided by the invention, and this method comprises:
Step 1, the dielectric film of on conductive substrates, growing.Conductive substrates is the low electric conducting material of resistivity, is used for the grid as organic field-effect tube, and growth dielectric film is to adopt the method for thermal oxide growth or the method for chemical vapour deposition (CVD) to realize on conductive substrates.
Step 2, on the dielectric film surface spin-coating erosion resistant agent, photoetching obtains the hearth electrode glue pattern of T shape raceway groove.Graphically obtaining of dielectric film surface hearth electrode through photoetching.
Fig. 2-1 specifically comprises to the process chart that Fig. 2-7 shows the organic field effect tube of making T shape raceway groove provided by the invention:
Shown in Fig. 2-1, adopt the technology of thermal oxide growth or the method for chemical vapour deposition (CVD) to prepare the dielectric substance layer film on the conductive substrates surface.
Shown in Fig. 2-2,, carry out preceding baking with hot plate or baking oven at dielectric laminar surface spin coating photoresist.
Shown in Fig. 2-3, exposure, the back of developing obtain the figure of asymmetric hearth electrode, and method comprises optical lithography or electron beam lithography.
Shown in Fig. 2-4, make deposited by electron beam evaporation or the PECVD thick metallic film of one deck 50nm of on the photoresist figure, growing.
Shown in Fig. 2-5, the slice, thin piece that has steamed metal is with an organic solvent peeled off photoresist, accomplish the graphical of asymmetric hearth electrode on the dielectric surface.
Shown in Fig. 2-6, the vacuum evaporation organic semiconductor thin-film is accomplished the making of end T shape channel organic field-effect transistor.It shown in Fig. 2-7 vertical view of device.
Fig. 3-1 specifically comprises to the process chart that Fig. 3-8 shows the organic field effect tube of the making T shape raceway groove that provides according to the embodiment of the invention:
Shown in Fig. 3-1, adopt the technology of thermal oxide growth to prepare the silica dioxide medium layer film in surface of silicon.
Shown in Fig. 3-2,, carry out preceding baking with hot plate or baking oven at silica surface spin coating AZ9918 photoresist.
Shown in Fig. 3-3, after developing, optical exposure obtains the figure of non-parallel hearth electrode.
Shown in Fig. 3-4, with the photoresist surface after developing through the mode of the electron beam evaporation thick golden film of one deck 50nm of growing.
Shown in Fig. 3-5, use acetone and ethanol to peel off photoresist to the slice, thin piece that has steamed gold thin film, accomplish the graphical of non-parallel hearth electrode on the dielectric surface.
Shown in Fig. 3-6, vacuum evaporation phthalein mountain valley with clumps of trees and bamboo copper film is accomplished the making of T shape channel organic field-effect transistor.It shown in Fig. 3-7 the device vertical view.
Shown in Fig. 3-8, be the device pictorial diagram of T shape channel organic field-effect transistor.
Above-described specific embodiment; The object of the invention, technical scheme and beneficial effect have been carried out further explain, and institute it should be understood that the above is merely specific embodiment of the present invention; Be not limited to the present invention; All within spirit of the present invention and principle, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (6)
1. the manufacture method of the organic field effect tube of a T shape raceway groove is characterized in that, this method comprises:
Step 1, the dielectric film of on conductive substrates, growing;
Step 2, on the dielectric film surface spin-coating erosion resistant agent, photoetching obtains the hearth electrode glue pattern of T shape raceway groove;
Step 3, on the hearth electrode glue pattern of T shape raceway groove surface vapor deposition layer of metal film;
Step 4, peel off photoresist, form hearth electrode with acetone;
Step 5, deposition organic semiconductor thin-film are accomplished the making of device.
2. the manufacture method of the organic field effect tube of T shape raceway groove according to claim 1 is characterized in that, conductive substrates described in the step 1 is the low electric conducting material of resistivity, is used for the grid as organic field-effect tube.
3. the manufacture method of the organic field effect tube of T shape raceway groove according to claim 1 is characterized in that, the dielectric film of on conductive substrates, growing described in the step 1 is to adopt the method for thermal oxide growth or the method for chemical vapour deposition (CVD) to realize.
4. the manufacture method of the organic field effect tube of T shape raceway groove according to claim 1 is characterized in that, the metallic film of hearth electrode described in the step 3 is realized through electron beam evaporation.
5. the manufacture method of the organic field effect tube of T shape raceway groove according to claim 1 is characterized in that, hearth electrode described in the step 4 is to adopt non-parallel arrangement, and then causes raceway groove to become T shape.
6. the manufacture method of the organic field effect tube of T shape raceway groove according to claim 1 is characterized in that, the deposition of organic semiconductor thin-film described in the step 5 adopts the method for vacuum thermal evaporation to realize.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008102400785A CN101752503B (en) | 2008-12-17 | 2008-12-17 | Manufacturing method of organic field effect transistor with T-shaped channel |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008102400785A CN101752503B (en) | 2008-12-17 | 2008-12-17 | Manufacturing method of organic field effect transistor with T-shaped channel |
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| Publication Number | Publication Date |
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| CN101752503A CN101752503A (en) | 2010-06-23 |
| CN101752503B true CN101752503B (en) | 2012-03-28 |
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Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101022127A (en) * | 2007-03-26 | 2007-08-22 | 电子科技大学 | Three-dimensional slot grid metal semiconductor field effect transistor |
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- 2008-12-17 CN CN2008102400785A patent/CN101752503B/en active Active
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101022127A (en) * | 2007-03-26 | 2007-08-22 | 电子科技大学 | Three-dimensional slot grid metal semiconductor field effect transistor |
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| CN101752503A (en) | 2010-06-23 |
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