CN101752332B - Opto-semiconductor device - Google Patents
Opto-semiconductor device Download PDFInfo
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- CN101752332B CN101752332B CN 200810184859 CN200810184859A CN101752332B CN 101752332 B CN101752332 B CN 101752332B CN 200810184859 CN200810184859 CN 200810184859 CN 200810184859 A CN200810184859 A CN 200810184859A CN 101752332 B CN101752332 B CN 101752332B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
The invention discloses a semiconductor photoelectric element, comprising a substrate, a semiconductor system and an electrode structure, wherein the semiconductor system comprises an active layer which is formed on the substrate; and the electrode structure is formed on the semiconductor system. The electrode structure comprises a first electrical contact region and a first electrical routing pad, a second electrical routing pad, a first electrical extensive route and a second electrical extensive route, wherein the first electrical extensive route and the second electrical extensive route are alternated by a stereoscopic bridging mode, and an insulating layer, which is formed at the intersection bridging position of the the first electrical extensive route and the second electrical extensive route
Description
Technical field
The present invention is about a kind of semiconductor optoelectronic element, especially about a kind of electrode structure of semiconductor optoelectronic element.
Background technology
The tradition light-emitting diode exists the phenomenon of electric current distribution inequality, title be electric current congested (Current Crowding).Electric current is congested usually can to cause the accumulation of element localized heat, makes luminous efficiency lower simultaneously, situation severe patient even also may cause component wear.
The electrode structural designs of light-emitting diode (layout) mainly is in order to solve the electric current congestion phenomenon, to increase the uniformity that electric current injects semiconductor layer.The main structural parameters of considering comprise p type electrode and n type electrode between distance and the ornaments position of wire pad (pad) and extended link (finger).Yet, along with increasing of the operand power of light-emitting diode, cause the increasing of chip size, make current delivery at the extended link end obviously be subjected to the influence of resistance accumulation and normal uneven result takes place to inject.
Some design at present is made in the two ends up and down of chip, promptly so-called vertical-type chip with p type and n type electrode.But this method need be removed epitaxial substrate the first electrical layer that connects substrate is originally exposed, to form first electrode in this surface.Must electrically form reflector, second electrode and permanent substrate on the layer on second of script epitaxial structure surface in addition, the rather complicated yield that causes of technology is difficult for keeping with the technology cost higher.
Summary of the invention
A kind of semiconductor optoelectronic element comprises: substrate; Semiconductor system comprises active layer and is formed on the substrate; And electrode structure, be formed on the semiconductor system, this electrode structure comprises: the first electrical contact zone or the first electrical wire pad, the second electrical wire pad, the first electrical extended link, second electrical extended link and the insulating barrier, wherein the first electrical extended link and the second electrical extended link are staggered in three-dimensional cross-over connection mode, and insulating barrier is formed at intersection cross-over connection place of this first electrical extended link and this second electrical extended link.
The present invention is a method of utilizing stereo staggered, makes that two kinds of electrical electrode structures (comprising wire pad and extended link) of difference more have the elastic space in the design in the light emitting diode construction, and take into account technology stability high with the low benefit of cost.
Description of drawings
Fig. 1 is the vertical view that designs a kind of its electrode structure of semiconductor optoelectronic element of first embodiment according to the present invention;
Fig. 2 A is that the semiconductor optoelectronic element electrode structure of first embodiment of the invention is in the profile of p type extended link and n type extended link intersection cross-over connection place A-A ';
Fig. 2 B is that the semiconductor optoelectronic element electrode structure of first embodiment of the invention is in the profile of n type contact zone B-B ';
Fig. 3 is the vertical view that designs a kind of its electrode structure of semiconductor optoelectronic element of second embodiment according to the present invention;
Fig. 4 is the vertical view that designs a kind of its electrode structure of semiconductor optoelectronic element of the 3rd embodiment according to the present invention;
Fig. 5 is the vertical view that designs a kind of its electrode structure of semiconductor optoelectronic element of the 4th embodiment according to the present invention;
Fig. 6 is the vertical view that the present invention designs a kind of its electrode structure of semiconductor optoelectronic element of the 5th embodiment.
The main element symbol description
101,301,401,501,601～p type wire pad
102,206,302,402,502,602～p type extended link
103,208,303,403～n type contact zone
104,207,304,404,503～n type extended link
105,305,405,504,604～n type wire pad
201～substrate
202～the first electrical layers
203～active layer
204～the second electrical layers
205,505～insulating barrier
5021,6021～vertically p type extended links
5022,6022～laterally p type extended links
5031,6031～vertically n type extended links
605～lateral isolation layer
5032,6032～laterally n type extended links
Embodiment
In order more to be expressly understood purpose of the present invention, feature and advantage, following conjunction with figs. explanation embodiments of the invention.But it should be noted that for for the purpose of clear the description, the appended figure of this specification not proportionally chi illustrated.
Please refer to Fig. 1, be the vertical view that designs a kind of its electrode structure of semiconductor optoelectronic element of first embodiment according to the present invention, comprise at least one p type wire pad 101, many p type extended links 102, a plurality of n types contact zone 103, many n type extended links 104, and at least one n type wire pad 105.Wherein p type extended link 102 forms a plurality of sealing symmetric shapes, and has at least one p type wire pad 101 to be formed on the p type extended link.N type contact zone 103 then is arranged among the above-mentioned sealing symmetric shape, and electrically connects mutually with many n type extended links 104.In addition, p type extended link 102 is electrically connected to p type wire pad 101 and n type wire pad 105 respectively with n type extended link 104.In the present embodiment, three-dimensional cross-over connection place 106 (steric crossover) of p type extended link 102 and 104 intersections of n type extended link is separated with insulating barrier, forms the stereo staggered design.Wherein above-mentioned electrode structure material can be selected from: chromium (Cr), titanium (Ti), nickel (Ni), platinum (Pt), copper (Cu), gold (Au), aluminium (Al) or silver metal materials such as (Ag).
Below cooperate Fig. 1, Fig. 2 A and Fig. 2 B that the first embodiment of the invention manufacture method is described with technological process: semiconductor optoelectronic element comprises one and is formed at the semiconductor system on the substrate 201 and is formed on electrode structure on the semiconductor system.Semiconductor system comprises semiconductor element, device, product, the circuit that can carry out or bring out photoelectricity and can change or uses.Particularly, semiconductor system comprises light-emitting diode (light-emitting diode; LED), laser diode (laser diode; LD), one at least in solar cell (solar cell), the Organic Light Emitting Diode (organic light-emitting diode).All subsystems or unit are all made with semi-conducting material in " semiconductor system " speech and unrestricted this system in this specification, other non-semiconductor materials, for example: metal, oxide, insulator etc. all optionally are integrated among this semiconductor system.
In the first embodiment of the present invention, the minimum electrically layer 204 of one first electrical layer 202, one active layer (active layer) 203 and 1 second that comprises of semiconductor system.First electrically layer 202 and 1 second electrically layer 204 each other at least two parts electrically, polarity or alloy is different or (" multilayer " refers to two layers or more, and be as follows in order to single layer of material that electronics and hole are provided or multilayer respectively.) if first electrically layer 202 and 1 second electrically layer 204 constitute by partly leading conductor material, then its electrical selection can for p type, n type, and the i type in the combination of the two at least arbitrarily.Active layer 203 is at the first electrical layer 202 and second electrically between the layer 204, the zone that may change or be brought out conversion for electric energy and luminous energy.Electric energy changes or brings out light able one such as light-emitting diode, Organic Light Emitting Diode; Luminous energy changes or brings out electric able one such as solar cell, photodiode.
With light-emitting diode, the luminous frequency spectrum of conversion back light can be adjusted by one or more layers physics or chemical configuration in the change semiconductor system.Material commonly used such as AlGaInP (AlGaInP) series, aluminum indium gallium nitride (AlGaInN) series, zinc oxide (ZnO) series, semiconductor system and the material that comprises one or more are selected from gallium (Ga), aluminium (Al), indium (In), arsenic (As), phosphorus (P), nitrogen (N) and silicon (Si) and constitute group.The structure of active layer 203 is as single heterojunction structure (single heterostructure; SH), double-heterostructure (double heterostructure; DH), bilateral double-heterostructure (double-side double heterostructure; DDH) or multi layer quantum well (multi-quantum well; MQW).Moreover the logarithm of adjusting quantum well can also change emission wavelength.
Substrate 201 is in order to grow up or the bearing semiconductor system, and suitable material system is including but not limited to germanium (Ge), GaAs (GaAs), indium phosphorus (InP), sapphire (sapphire), carborundum (SiC), silicon (Si), lithium aluminate (LiAlO
2), zinc oxide (ZnO), gallium nitride (GaN), aluminium nitride (AlN), glass, composite material (composite), diamond, CVD diamond, bore carbon (diamond-like carbon with class; DLC) etc.
Also optionally comprise a transition zone (not shown) between substrate 201 and the semiconductor system.Transition zone makes the material system of substrate between two kinds of material systems " transition " to the material system of semiconductor system.For light-emitting diode structure, on the one hand, transition zone be for example resilient coating (buffer layer) etc. in order to reduce by two kinds of unmatched material layers of storeroom lattice.On the other hand, transition zone can also be in order to individual layer, multilayer or structure in conjunction with two kinds of materials or two isolating constructions, and its available material is as: organic material, inorganic material, metal, and semiconductor etc.; Its available structure as: reflector, heat-conducting layer, conductive layer, ohmic contact (ohmic contact) layer, anti-deformation layer, Stress Release (stress release) layer, stress adjustment (stress adjustment) layer, engage (bonding) layer, wavelength conversion layer, reach mechanical fixation structure etc.
Second electrically also optionally forms a contact layer (not shown) on the layer 204.Contact layer is arranged at second electrical layer 204 side away from active layer 203.Particularly, contact layer can be the two combination of optical layers, electrical layer or its.Optical layers can change electromagnetic radiation or the light that comes from or enter active layer 203.Be meant at least a optical characteristics that changes electromagnetic radiation or light in this alleged " change ", afore-mentioned characteristics is including but not limited to frequency, wavelength, intensity, flux, efficient, colour temperature, color rendering (rendering index), light field (light field), and angle of visibility (angle of view).Electrical layer can be so that numerical value, density, the distribution of one change or the trend that changes are arranged at least in the voltage between arbitrary group of opposite side of contact layer, resistance, electric current, electric capacity.The constituent material of contact layer comprises oxide, conductive oxide, transparent oxide, have 50% or the oxide of above penetrance, metal, relatively the printing opacity metal, have 50% or the semiconductor of the metal of above penetrance, organic matter, inanimate matter, fluorescent thing, phosphorescence thing, pottery, semiconductor, doping, and undoped semiconductor in one at least.In some is used, the material of contact layer be tin indium oxide, cadmium tin, antimony tin, indium zinc oxide, zinc oxide aluminum, with zinc-tin oxide in one at least.If relative printing opacity metal, its thickness is about 0.005 μ m～0.6 μ m.
Etching above-mentioned second electrical layer 204 and active layer 203 are to exposing electrically layer 202 of part discontinuous first.Then at the second electrical specific region bedding insulating barrier 205 on the layer, directly electrically layers 204 contact with active layer 203 and cause electrical short circuit with second with the n type contact zone avoiding to form subsequently.Afterwards according to electrode structural designs, utilize the gold-tinted method to define the position of n type contact zone 208, p type extended link 206 and p type wire pad (not shown), use evaporation or plating mode to make metal be covered in above-mentioned defined range, form n type contact zone 208, p type extended link 206 and p type wire pad (not shown).
Then utilize high dielectric material, for example: SiO
x, SiN
x, Al
2O
3, TiO
xCover insulating barrier behind whole element surface Deng inorganic oxide or organic dielectric materials, the n type contact zone 208 and p type wire pad (not shown) that utilize technologies such as gold-tinted, etching to expose again to have formed.Use gold-tinted technology to define the position of n type wire pad 208 and n type extended link 207 at last, re-using evaporation or plating mode makes metal be covered in the zone of above-mentioned definition, form n type wire pad 208 and n type extended link 207, finish the electrode structure that what is called of the present invention has the stereo staggered form.
Fig. 2 A is that the electrode structure of semiconductor optoelectronic element of first embodiment of the invention is in the p of figure one type extended link 102 profile with an intersection cross-over connection place A-A ' of n type extended link 104.P type extended link 206 is formed on the second electrical layer 204, one insulating barrier 205 is formed on the p type extended link 206 and the second electrical layer 204, form a n type extended link 207 at last again on insulating barrier 205, electrically isolated with p type extended link 206, and form the stereo staggered form.
Fig. 2 B is that the electrode structure of semiconductor optoelectronic element of first embodiment of the invention is in the profile of n type contact zone B-B '.Form an insulating barrier 205 and surround above-mentioned second electrically after layer 204 and the active layer 203, form a n type extended link 207 on the insulating barrier 205 with second electrically layer 204 electrically isolated after, form a n type contact zone 208 with metal again.Wherein the metal of n type contact zone 208 directly contacts the first electrical layer 202, and n type extended link 207 then is formed on the top of active layer 203.
Fig. 3 and Fig. 4 show the vertical view that designs a kind of its electrode structure of semiconductor optoelectronic element of the second and the 3rd embodiment according to the present invention: comprise at least one p type wire pad 301,401; Many p type extended links 302,402; A plurality of n types contact zone 303,403; Many n type extended links 304,404; And at least one n type wire pad 305,405.Wherein p type extended link forms a plurality of sealing symmetric shapes, and n type contact zone then is arranged among the above-mentioned sealing symmetric shape, and electrically connects mutually with many n type extended links; In addition, p type extended link and n type extended link are electrically connected to p type wire pad and n type wire pad respectively.In the design, three-dimensional cross-over connection place (steric crossover) of p type extended link and the intersection of n type extended link is separated with insulating barrier, forms the stereo staggered design.
Fig. 5 and Fig. 6 are the another kind of execution modes that shows electrode structure of the present invention.Fig. 5 shows the vertical view that designs a kind of its electrode structure of semiconductor optoelectronic element of the 4th embodiment according to the present invention, comprises at least one p type wire pad 501, many p type extended links 502, many n type extended links 503, at least one n type wire pad 504 and a plurality of insulating barrier 505.
P type extended link 502 forms a plurality of close-shaped, comprises many vertical p type extended links 5021, reaches many horizontal p type extended links 5022.Many vertical n type extended link 5031 is arranged in the above-mentioned p type extended link with horizontal 5032 of n type extended links, and wherein the vertical p type extended link 5021 of part forms the stereo staggered cross-over connection with n type extended link 5032.At least one p type wire pad 501 is formed on vertical p type extended link 5021 and horizontal p type extended link 5022 confluces.
In the present embodiment, vertically n type extended link 5031 and horizontal n type extended link 5032 are all to form the mode of irrigation canals and ditches 506 (surrounding the square frame of n type extended link in the accompanying drawing), the etching second electrical layer electrically connects with the first electrical layer to exposing the part first electrical layer with active layer, execution mode is identical with above-mentioned first embodiment in detail, repeats no more.
After laterally the irrigation canals and ditches of n type extended link 5032 form, in the zone covering insulating barrier 505 of vertical p type extended link 5021 with the laterally staggered cross-over connection of n type extended link 5032 desires, form vertical p type extended link 5021 again on above-mentioned insulating barrier 505, to form the two different electrically three-dimensional cross-over connections of electrode.
At least one n type wire pad 504 is arranged on the interlaced area of vertical n type extended link 5031 and horizontal n type extended link 5032, its formation is to cover n type extended link irrigation canals and ditches district by insulating barrier 505, and be electrically connected n type extended link to insulating barrier with the lead (not shown), form n type wire pad 504 on active layer.
Fig. 6 shows the vertical view that designs a kind of its electrode structure of semiconductor optoelectronic element of the 5th embodiment according to the present invention, comprises at least one p type wire pad 601, many p type extended links 602, many n type extended links 603, at least one n type wire pad 604 and at least one lateral isolation layer 605.
P type extended link 602 forms a plurality of close-shaped, comprises many vertical p type extended links 6021, reaches many horizontal p type extended links 6022.Many vertical n type extended link 6031 is arranged in the above-mentioned p type extended link with horizontal 6032 of n type extended links, and wherein the vertical p type extended link 6021 of part forms the stereo staggered cross-over connection with n type extended link 6032.At least one p type wire pad 601 is formed on vertical p type extended link 6021 and horizontal p type extended link 6022 confluces.
In the present embodiment, n type extended link 6031 is to form the mode of irrigation canals and ditches 606 (surrounding the square frame of n type extended link in the accompanying drawing) longitudinally, the etching second electrical layer electrically connects with the first electrical layer to exposing the part first electrical layer with active layer, execution mode repeats no more with identical with above-mentioned first embodiment in detail.
Behind the irrigation canals and ditches that form vertical n type extended link 6031, form a lateral isolation layer 605, can completely cut off vertical p type extension circuit 6021 and the horizontal n type extension circuit 6032 that forms afterwards.Form a horizontal n type extended link 6032 again and electrically connect vertical n type extended link 6031.Wherein horizontal n type extended link 6032 and the zone that vertical p type extended link 6021 interlocks form the electrically three-dimensional cross-over connections of electrodes of two differences by above-mentioned lateral isolation layer 605.
At least one n type wire pad 604 is arranged on the vertical n type extended link 6031 and the horizontal interlaced area of n type extended link 6032, directly electrically connects with horizontal n type extended link 6032, need not form irrigation canals and ditches, can directly expose and is connected with other routings.But n type wire pad 604 also can be arranged in the irrigation canals and ditches district, directly electrically connects first electrical layer and other routings.
In addition, semiconductor optoelectronic element of the present invention can also be connected with other elements combination further to form a light-emitting device (light-emitting apparatus).This light-emitting device comprises an inferior carrier (sub-mount) with at least one circuit; At least one scolder (solder) is positioned on above-mentioned carrier, by this scolder semiconductor optoelectronic element is cohered and is fixed on time carrier and the substrate of semiconductor optoelectronic element is electrically connected with circuit formation on time carrier; And an electric connection structure is with the electrode structure of electric connection semiconductor optoelectronic element and the circuit on time carrier; Wherein, above-mentioned inferior carrier can be that lead frame (lead frame) or large scale are inlayed substrate (mounting substrate), with the circuit planning that makes things convenient for light-emitting device and improve its radiating effect.
Electrode structure of the present invention is commonly used design more advantages, for example: p type extended link and n type extended link, no longer need to be subjected to keeping each other the principle restriction of certain distance range, but can allow the second electrical extended link be arranged to semiclosed or closed pattern alone.The first electrical extended link is then taked to carry out layout at the closed figure central point with the mode that the second electrical laminar surface has great-jump-forward to contact.This kind electrode structure the distributed area of electric current is divided into several sub-cells (semiclosed or closed pattern) and with the notions of how much symmetries with the even injection luminescent diode of electric current.Therefore, electrode structure of the present invention can be when chip size significantly increases and utilize the number that increases sub-cell simply and finish.
In addition, the present invention is arranged on the different both sides of active layer with part n type extended link and n type contact zone or n type wire pad, and do three-dimensional cross-over connection with p type extended link, need not excavate too much semiconductor area as conventional approaches, the usable area that can reduce semiconductor optoelectronic element is because of loss in the design and then lifting luminous efficiency.
Though more than each figure only distinguish corresponding specific embodiment with illustrating, yet, illustrated or the element that discloses among each embodiment, execution mode, design criterion, and know-why remove showing mutually conflict, contradiction each other or being difficult to the common implementing, can comply with its required any reference, exchange, collocation, coordination or merging.
Though the present invention illustrated as above, so its be not in order to limit the scope of the invention, enforcement order or the material and technology method used.For various modifications and the change that the present invention did, neither spirit of the present invention and the scope of taking off.
Claims (12)
1. semiconductor optoelectronic element comprises:
Substrate;
Semiconductor system is formed on this substrate, comprises active layer; And
Electrode structure is formed on this semiconductor system, and this electrode structure comprises:
The first electrical contact zone and the first electrical wire pad;
The second electrical wire pad;
The first electrical extended link;
The second electrical extended link, wherein this first electrical extended link and this second electrical extended link are staggered in three-dimensional cross-over connection mode; And
Insulating barrier is formed at intersection cross-over connection place of this first electrical extended link and this second electrical extended link.
2. semiconductor optoelectronic element as claimed in claim 1, wherein this semiconductor system also comprises electrically layer of the first electrical layer and second.
3. semiconductor optoelectronic element as claimed in claim 2, wherein this first electrical extended link electrically connects this first electrical contact zone or this first electrical wire pad, and this second electrical extended link electrically connects this second electrical wire pad.
4. semiconductor optoelectronic element as claimed in claim 1, wherein this second electrical extended link forms the symmetric geometry of sealing, comprising: triangle, rectangle, rhombus or hexagon.
5. semiconductor optoelectronic element as claimed in claim 4, wherein this first electrical contact zone is formed at central authorities or at least two these first electrical extended link confluces of the symmetric geometry of this second electrical extended link formation.
6. semiconductor optoelectronic element as claimed in claim 4, wherein this second electrical wire pad is formed on the symmetric geometry of this second electrical extended link formation.
7. semiconductor optoelectronic element as claimed in claim 2, wherein this second electrical extended link is formed on this second electrical layer, and electrically connects with this second electrical layer.
8. semiconductor optoelectronic element as claimed in claim 2, wherein this insulating barrier is formed on this second electrical layer.
9. semiconductor optoelectronic element as claimed in claim 8, wherein this first electrical extended link is formed on this insulating barrier.
10. semiconductor optoelectronic element as claimed in claim 2, wherein this first electrical contact zone directly contacts with this first electrical layer and electrically connects with this first electrical layer.
11. semiconductor optoelectronic element as claimed in claim 8, wherein this first electrical extended link comprises the vertical first electrical extended link and the horizontal first electrical extended link, and wherein this insulating barrier is formed under this horizontal first electrical extended link.
12. semiconductor optoelectronic element as claimed in claim 1, wherein this semiconductor system comprises in light-emitting diode, laser diode, solar cell, the Organic Light Emitting Diode one at least.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200810184859 CN101752332B (en) | 2008-12-05 | 2008-12-05 | Opto-semiconductor device |
| CN201110332540.6A CN102361054B (en) | 2008-12-05 | 2008-12-05 | Opto-semiconductor device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200810184859 CN101752332B (en) | 2008-12-05 | 2008-12-05 | Opto-semiconductor device |
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|---|---|---|---|
| CN201110332540.6A Division CN102361054B (en) | 2008-12-05 | 2008-12-05 | Opto-semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101752332A CN101752332A (en) | 2010-06-23 |
| CN101752332B true CN101752332B (en) | 2011-12-28 |
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| CN 200810184859 Active CN101752332B (en) | 2008-12-05 | 2008-12-05 | Opto-semiconductor device |
| CN201110332540.6A Active CN102361054B (en) | 2008-12-05 | 2008-12-05 | Opto-semiconductor device |
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| CN201110332540.6A Active CN102361054B (en) | 2008-12-05 | 2008-12-05 | Opto-semiconductor device |
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| TW201415670A (en) * | 2012-10-03 | 2014-04-16 | Lextar Electronics Corp | Light emitting diode chip |
| US9502615B2 (en) * | 2014-11-13 | 2016-11-22 | Epistar Corporation | Light-emitting diode device |
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| TW365071B (en) * | 1996-09-09 | 1999-07-21 | Toshiba Corp | Semiconductor light emitting diode and method for manufacturing the same |
| US6642548B1 (en) * | 2000-10-20 | 2003-11-04 | Emcore Corporation | Light-emitting diodes with loop and strip electrodes and with wide medial sections |
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Also Published As
| Publication number | Publication date |
|---|---|
| CN102361054A (en) | 2012-02-22 |
| CN101752332A (en) | 2010-06-23 |
| CN102361054B (en) | 2015-09-02 |
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