CN101752309A - CMOS (complementary metal-oxide-semiconductor) image sensor and manufacture method thereof - Google Patents
CMOS (complementary metal-oxide-semiconductor) image sensor and manufacture method thereof Download PDFInfo
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- CN101752309A CN101752309A CN200810044041A CN200810044041A CN101752309A CN 101752309 A CN101752309 A CN 101752309A CN 200810044041 A CN200810044041 A CN 200810044041A CN 200810044041 A CN200810044041 A CN 200810044041A CN 101752309 A CN101752309 A CN 101752309A
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Abstract
The invention discloses a manufacture method of a CMOS (complementary metal-oxide-semiconductor) image sensor. In the post-section process of the manufacture method, a barrier layer is firstly deposited on a photosensitive layer, PMD (pre-metal dielectric) deposition, planarization, photoetching, and etching are carried out to etch the PMD on the photosensitive diode and stop at the barrier layer, then a dielectric layer with a high refractive index is deposited, then the planarization is carried out while the total thickness basically keeps unchanged, and the subsequent process is consistent with a traditional process; and processing on other IMD (inter-metal dielectric) is similar to that on the PMD, but does not need to deposite the barrier layer. The invention also discloses a CMOS image sensor, a barrier layer is positioned on a photosensitive layer which is distributed with a photosensitive diode on a silicon substrate, a dielectric layer covers the barrier layer, wherein the dielectric layer above the photosensitive diode is a high refractive index dielectric layer with higher refractive index than that of a common dielectric layer, and the dielectric layers on other parts are common dielectric layers. The invention can prevent the pixel of the CMOS image sensor from generating the optical interference and improve the response angle of the pixel.
Description
Technical field
The present invention relates to semiconductor technology, particularly a kind of cmos image sensor manufacture method and cmos image sensor.
The present invention relates to.
Background technology
Traditional CIS (CMOS Image Sensor, cmos image sensor) manufacture method last part technology as shown in Figure 1, its BEOL is as follows:
1. traditional sucrose layer (as PEOX, HDP, FSG etc., refraction coefficient RI is 1.4～1.5) CVD (chemical meteorological deposit) deposit and planarization
2. finish follow-up through hole and metal level technology
3. repeating step 1, step 2 are finished up to whole technologies
Traditional cmos image sensor manufacture method characteristics are as follows:
1. consider characteristics such as inner amplifying circuit and the transistorized speed of other peripheral circuits, last part technology (comprise dielectric layer with metal layer thickness etc.) is often consistent with the last part technology of pure logical circuit or quite, thereby the thickness of whole back segment dielectric layer is thicker.
2. too thick back segment thickness of dielectric layers causes incident light will could arrive light sensitive diode (photo diode through distant distance by lenticule, PD) surface, so just might cause " light is disturbed mutually " between the pixel and reduce the response angle of cmos image sensor light, thereby reduced the quality of image, particularly along with the size of pixel is dwindled day by day, this phenomenon is more and more serious.
As seen from Figure 2, Bao last part technology can access the response angle of bigger light.By Fig. 3-A, Fig. 3-B as seen, to the incident light of same angle, when H1＞H2 (H is a dielectric thickness), D1＞D2 (D is the distance that light departs from selected light sensitive diode) is arranged necessarily; Therefore, " light is disturbed mutually " between the pixel takes place in thick last part technology easily.
At traditional CIS (CMOS Image Sensor, cmos image sensor) in the last part technology, has only a kind of dielectric layer, when incident light during with wide-angle incident, because having certain altitude and be difficult to, the back segment dielectric layer of CIS and metal level reduce, therefore this incident light might incide adjacent CIS pixel, causes the generation of " light is disturbed mutually ", thereby makes adjacent CIS pixel produce noise; Simultaneously, this also just shows that to specific pixel the response angle of its light can not be too big, and this has just limited the conversion efficiency of light greatly, has reduced the quality of imageing sensor imaging.
Summary of the invention
The technical problem to be solved in the present invention is to avoid the pixel of cmos image sensor to produce " light is disturbed mutually ", improves the response angle that specific pixel is come.
For solving the problems of the technologies described above, the invention provides a kind of cmos image sensor manufacture method, its last part technology may further comprise the steps:
Step 1. be distributed with deposit one deck barrier layer on the photosensitive layer of light sensitive diode;
Step 2. on above-mentioned barrier layer, carry out the before-metal medium layer deposit and the planarization of conventional media;
Step 3. the before-metal medium layer to conventional media carries out photoetching and etching, and the before-metal medium layer that will be positioned at the conventional media of light sensitive diode top etches away, and stops on the barrier layer;
Step 4. the high refractive index medium layer that deposit is high than the conventional media refractive index;
Step 5. with this high refractive index medium layer planarization, and keep the before-metal medium layer thickness of the conventional media after total thickness and the above-mentioned planarization to equate;
Step 6. finish the subsequent technique on the before-metal medium layer;
Step 7. carry out the metal interlamination medium layer deposit and the planarization of conventional media;
Step 8. the metal interlamination medium layer to conventional media is carried out photoetching and etching, and the metal interlamination medium layer that will be positioned at the conventional media of light sensitive diode top etches away;
Step 9. the high refractive index medium layer that deposit is high than the conventional media refractive index;
Step 10. with this high refractive index medium layer planarization, and keep the before-metal medium layer thickness of the conventional media after total thickness and the above-mentioned planarization to equate;
Step 11. finish the subsequent technique on the metal interlamination medium layer;
Step 12. repeating step seven～step 11, to the last the layer of metal layer is finished;
Step 13. carry out subsequent technique.
For solving the problems of the technologies described above, the invention also discloses a kind of cmos image sensor, it on silicon substrate the photosensitive layer that is distributed with light sensitive diode, it on the photosensitive layer barrier layer, on the barrier layer, be coated with dielectric layer, wherein the dielectric layer of light sensitive diode correspondence top is the high refractive index medium layer high than conventional media layer refractive index, and the dielectric layer of other parts is the conventional media layer.
The present invention, utilize the total reflection principle of light, introduced the dielectric layer of different refractivity at pixel cell, therefore when incident light during with wide-angle incident (satisfying total reflection), the dielectric layer generation total reflection of this incident light on pixel cell, thus this incident light also can arrive the light sensitive diode (PD) of this pixel cell; If angle of incidence of light does not also reach the critical condition of total reflection in addition, but owing to enter the thin process of light from light is close, refractive deflection than wide-angle can take place in light, so also can improve " light is disturbed mutually " between the pixel, thereby improved response angle and the conversion efficiency of cmos image sensor, and when improving the cmos image sensor image quality, also do not influenced the performance of cmos device light.
Description of drawings
Below in conjunction with the drawings and the specific embodiments the present invention is described in further detail.
Fig. 1 is traditional CIS profile and incidence angle
Fig. 2 is the influence schematic diagram of the thickness of last part technology to the response angle of light;
Fig. 3-A is the influence that thicker back segment dielectric layer disturbs generation light;
Fig. 3-B is the influence that thin back segment dielectric layer disturbs generation light;
Fig. 4 is a cmos image sensor manufacture method last part technology barrier layer schematic diagram of the present invention;
Fig. 5 is cmos image sensor manufacture method last part technology deposit conventional media deposit of the present invention and planarization schematic diagram;
Fig. 6 is a cmos image sensor manufacture method last part technology conventional media chemical wet etching schematic diagram of the present invention;
Fig. 7 is a cmos image sensor manufacture method last part technology deposit high refractive index medium layer schematic diagram of the present invention;
Fig. 8 is a cmos image sensor manufacture method last part technology high refractive index medium layer planarization schematic diagram of the present invention;
Fig. 9 is that cmos image sensor manufacture method last part technology of the present invention is finished through hole and metal level process schematic representation;
Figure 10 is that cmos image sensor manufacture method last part technology of the present invention is finished whole process schematic representations;
Figure 11 is the vertical view of cmos image sensor one pixel cell of the present invention.
Embodiment
The back-end process of one execution mode of cmos image sensor manufacture method of the present invention such as Fig. 4～shown in Figure 10, may further comprise the steps:
1. be distributed with on the light sensitive diode photosensitive layer deposit one deck barrier layer (as 500～1000 dust SIO
xN
y);
2. on above-mentioned barrier layer, carry out before-metal medium layer (PMD) the CVD deposit and the planarization of conventional media (as PEOX, HDP, FSG etc., refraction coefficient RI is 1.4～1.5);
3. the before-metal medium layer (PMD) to above-mentioned conventional media carries out photoetching and etching, and the before-metal medium layer that will be positioned at the conventional media of light sensitive diode (PD) top etches away, and stops on the barrier layer;
With mode deposit one deck of CVD (chemical vapor deposition) than the high high refractive index medium layer of conventional media refractive index (such as SIO
xN
y, refraction coefficient RI is 1.7～1.9);
5. with this floor height index medium layer planarization (as CMP, chemico-mechanical polishing), and keep total thickness to equate with the before-metal medium layer thickness that step 2 is finished later conventional media;
6. finish follow-up through hole of before-metal medium layer and metal level technology;
7. then carry out metal interlamination medium layer (IMD) deposit and the planarization of conventional media (as PEOX (polyethylene glycol oxide), HDP (high-density plasma), FSG (fluoride glass) etc., refraction coefficient RI is 1.4～1.5);
8. the metal interlamination medium layer (IMD) of conventional media is carried out photoetching and etching, the metal interlamination medium layer that will be positioned at the conventional media of light sensitive diode top etches away;
Deposit than the high high refractive index medium layer of conventional media refractive index (such as SIO
xN
y, refraction coefficient RI is 1.7～1.9);
10. with this high refractive index medium layer planarization, and keep the metal interlamination medium layer thickness of the conventional media after total thickness and the above-mentioned planarization to equate;
11. finish follow-up through hole and metal level technology on the metal interlamination medium layer;
12. repeating step 7～step 11, to the last layer of metal layer (as three-layer metal) is finished;
13. then carry out the deposit and the planarization of passivation layer (Passivation);
14. finish subsequent techniques such as the photoetching of passivation layer and etching.
Cmos image sensor manufacture method of the present invention, first deposit one deck barrier layer in its last part technology, carry out the deposit and the planarization of the before-metal medium layer of conventional media then, utilize a photoetching and etching, the before-metal medium layer that will be positioned at the conventional media of light sensitive diode (PD) top etches away, and stops on the barrier layer; The dielectric layer of the high index of refraction that deposit one deck is high than the conventional media refractive index carries out planarization more then, and keeps total thickness constant substantially, and follow-up through hole and metal level technology are with traditional technology unanimity; The way of other IMD (metal interlamination medium layer) is identical with before-metal medium layer, but does not need barrier layer (stop layer).
Total reflection principle according to light: promptly when light when optically denser medium incides optically thinner medium, if incidence angle greater than a fixing angle (refractive index that depends on two media), then full emission takes place in this incident optical energy.
The profile of one execution mode of cmos image sensor of the present invention for being distributed with the photosensitive layer of light sensitive diode, is that a barrier layer is (as 500～1000 dust SIO on the photosensitive layer on silicon substrate as shown in figure 11
xN
y), on the barrier layer, be coated with dielectric layer, wherein the dielectric layer of light sensitive diode correspondence top is (such as SIO than the high high refractive index medium layer of conventional media layer refractive index
xN
y, refraction coefficient RI is 1.7～1.9), the dielectric layer of other parts is conventional media layer (as PEOX, HDP, FSG etc., refraction coefficient RI is 1.4～1.5).Figure 11 shows that the pixel cell vertical view of cmos image sensor of the present invention, in a pixel cell, the dielectric layer that is positioned at the light sensitive diode correspondence top in centre position is the high refractive index medium layer high than conventional media layer refractive index, and the dielectric layer of the periphery of light sensitive diode correspondence top is the conventional media layer.
The present invention has introduced the dielectric layer of different refractivity at pixel cell, therefore, as shown in figure 10, when incident light during with wide-angle incident (satisfying total reflection :) as light A, the dielectric layer generation total reflection of this incident light on pixel, thus this incident light also can arrive the light sensitive diode (PD) of this pixel; In addition, as light B, even this angle of incidence of light does not also reach the critical condition of total reflection, but owing to enter the thin process of light from light is close, refractive deflection than wide-angle can take place in light B, so also can improve " light is disturbed mutually " between the pixel, thereby improve response angle and the conversion efficiency of cmos image sensor, and when improving the cmos image sensor image quality, also not influence the performance of cmos device light.
Claims (3)
1. a cmos image sensor manufacture method is characterized in that, its last part technology may further comprise the steps:
Step 1. be distributed with deposit one deck barrier layer on the photosensitive layer of light sensitive diode;
Step 2. on above-mentioned barrier layer, carry out the before-metal medium layer deposit and the planarization of conventional media;
Step 3. the before-metal medium layer to conventional media carries out photoetching and etching, and the before-metal medium layer that will be positioned at the conventional media of light sensitive diode top etches away, and stops on the barrier layer;
Step 4. the high refractive index medium layer that deposit is high than the conventional media refractive index;
Step 5. with this high refractive index medium layer planarization, and keep the before-metal medium layer thickness of the conventional media after total thickness and the above-mentioned planarization to equate;
Step 6. finish the subsequent technique on the before-metal medium layer;
Step 7. carry out the metal interlamination medium layer deposit and the planarization of conventional media;
Step 8. the metal interlamination medium layer to conventional media is carried out photoetching and etching, and the metal interlamination medium layer that will be positioned at the conventional media of light sensitive diode top etches away;
Step 9. the high refractive index medium layer that deposit is high than the conventional media refractive index;
Step 10. with this high refractive index medium layer planarization, and keep the inter-metal medium layer thickness of the conventional media after total thickness and the above-mentioned planarization to equate;
Step 11. finish the subsequent technique on the metal interlamination medium layer;
Step 12. repeating step seven～step 11, to the last the layer of metal layer is finished.
2. cmos image sensor, it on silicon substrate the photosensitive layer that is distributed with light sensitive diode, it is characterized in that, it on the photosensitive layer barrier layer, on the barrier layer, be coated with dielectric layer, wherein the dielectric layer of light sensitive diode correspondence top is the high refractive index medium layer high than conventional media layer refractive index, and the dielectric layer of other parts is the conventional media layer.
3. cmos image sensor according to claim 2 is characterized in that, described barrier layer and high refractive index medium layer are SIO
xN
y, described conventional media layer is PEOX, HDP or FSG.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108388827A (en) * | 2017-02-03 | 2018-08-10 | 上海箩箕技术有限公司 | Fingerprint imaging module and electronic equipment |
| WO2021056988A1 (en) * | 2019-09-23 | 2021-04-01 | 神盾股份有限公司 | Integrated optical sensor and manufacturing method therefor |
-
2008
- 2008-12-02 CN CN200810044041A patent/CN101752309A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108388827A (en) * | 2017-02-03 | 2018-08-10 | 上海箩箕技术有限公司 | Fingerprint imaging module and electronic equipment |
| CN108388827B (en) * | 2017-02-03 | 2020-06-26 | 上海箩箕技术有限公司 | Fingerprint imaging module and electronic equipment |
| WO2021056988A1 (en) * | 2019-09-23 | 2021-04-01 | 神盾股份有限公司 | Integrated optical sensor and manufacturing method therefor |
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Application publication date: 20100623 |