CN101752203A - Preparation method of inclined groove - Google Patents
Preparation method of inclined groove Download PDFInfo
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- CN101752203A CN101752203A CN200810044120A CN200810044120A CN101752203A CN 101752203 A CN101752203 A CN 101752203A CN 200810044120 A CN200810044120 A CN 200810044120A CN 200810044120 A CN200810044120 A CN 200810044120A CN 101752203 A CN101752203 A CN 101752203A
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Abstract
The utility model discloses a preparation method of an inclined groove which mainly comprises the following steps: engraving on a silicon substrate by utilizing a mask layer to form the groove, carrying out inclined ion injection and thermal oxidation, removing a thermal oxidation film and the like. The preparation method of the inclined groove can obtain 80-90-degree scope of an inclination angle of the inclined groove through adjusting an ion injection process and a thermal oxidation process.
Description
Technical field
The present invention relates to a kind of preparation method of groove, particularly a kind of preparation method of inclined groove.
Background technology
Groove structure is widely used for realizing isolating, the making capacity, or make MOSFET etc.In the existing groove manufacturing technology; no matter utilize photoresist to do mask protection or utilize deielectric-coating to do mask protection; all be to realize that by the technology of adjusting etching groove the groove that needs tilts; but this method is bigger in the degree of depth of groove, or the depth-width ratio of groove just is difficult to reach requirement when higher.Utilize deielectric-coating to do under the situation of trench etching mask; because being difficult to generate enough polymer protects trenched side-wall; all difficultly under the shallow trench situation obtain big inclination angle, when dark or depth-width ratio was big at the groove that requires, the inclination angle that obtain to expect was impossible substantially.In the technology of doing mask with photoresist; the polymer that photoresist produces can provide the protection that needs to obtain inclined groove for trenched side-wall; but when dark or depth-width ratio is big when the groove that requires; for the inclination angle that needing to obtain; the polymer of oppose side wall protection has certain requirement; at this moment the bottom of groove will be too many because of polymer in the etching process, is difficult to carry out uniform etching.
Summary of the invention
The technical problem to be solved in the present invention provides a kind of preparation method of inclined groove, and it can prepare the bigger groove of depth-width ratio of inclination.
For solving the problems of the technologies described above, the preparation method of inclined groove of the present invention has at least after etching forms groove on the silicon substrate of a mask layer on the surface, comprises the steps:
1) angle-tilt ion that described groove is rotated is injected, and the condition that described ion injects is set according to the angle of inclination of the groove that described needs obtain;
2) then carry out oxidation processes, make the silica of trenched side-wall turn to silica;
3) mask layer on the described silicon substrate of removal and the silica of described trenched side-wall obtain the groove of trenched side-wall than the trenched side-wall inclination of institute's etching in the step 2.
The mode of the present invention by utilizing angle-tilt ion to inject, make the trenched side-wall at differing heights place accept different ion concentrations, by thermal oxidation technology trenched side-wall is carried out oxidation then, because of the silicon area after the ion injection is easy to oxidized, so the heat oxide film thickness of trenched side-wall is reduced along with the increase of gash depth (apart from the distance at top) or says that the oxidized amount that makes sidewall upper substrate material silicon reduces with the degree of depth increase of groove, at last the heat oxide film that generates is removed, the groove structure that obtains tilting, make groove structure can satisfy the integrated requirement of subsequent technique (for example make follow-up groove fill out membrane process be easy to obtain not have the cavity film etc.).By adjusting ion implantation technology and thermal oxidation technology among the preparation method of inclined groove of the present invention, can obtain the groove tilt angle ranges is 80-90 degree (angle between trenched side-wall and the vertical line).
Description of drawings
The present invention is further detailed explanation below in conjunction with accompanying drawing and embodiment:
Fig. 1 is for implementing the structural representation behind the etching groove among the preparation method of the present invention;
Fig. 2 is for implementing the structural representation that preparation method's intermediate ion of the present invention injects;
Fig. 3 is for implementing the structural representation after the thermal oxidation among the preparation method of the present invention;
Fig. 4 is for implementing the structural representation behind the removal silica among the preparation method of the present invention.
Embodiment
The preparation method of inclined groove of the present invention has at least after etching forms groove on the silicon substrate of a mask layer on the surface, comprises the steps:
1) angle-tilt ion that groove is rotated is injected, and the condition that ion injects is set (ion implanting conditions of indication mainly refers to angle of inclination, ion implantation concentration and energy etc.) here according to the angle of inclination of the groove that described needs obtain;
2) then carry out oxidation processes, make the silica of trenched side-wall turn to silica;
3) mask layer on the described silicon substrate of removal and the silica of described trenched side-wall obtain the groove of trenched side-wall than the trenched side-wall inclination of institute's etching in the step 2.
Above-mentioned mask layer can be photoresist layer and adds dielectric layer (as shown in Figure 1, define by photoresist that etching dielectric layer and silicon substrate form groove behind the groove position), also can be directly be dielectric layer (after defining the groove position by photoetching process, the etching dielectric layer forms hard mask layer, photoresist is removed in the back, forms silicon substrate with the dielectric layer for the mask etching silicon substrate).The groove that is etched can be 90 degree, also can be the groove with certain gradient.
The (see figure 2) when angle-tilt ion that groove is rotated is injected, the condition that ion injects is set according to the angle of inclination of the groove that described needs obtain, generally that the angle of inclination of required groove is big more, also the phase strain is big at angle of inclination when ion injects, the ion that injects can be any of phosphorus, arsenic, boron, germanium or silicon, also can be the material that comprises above-mentioned any ion; This step ion injects and makes the different depth of trenched side-wall that different ions concentration be arranged, the ion concentration of trenched side-wall reduces with the increase of gash depth, in ion implantation process, can comprise big inclination injects, little inclination angle is injected or their combination, also can be by injection that repeatedly condition is different to achieve the goal.As adopt dielectric layer shown in Figure 1 to add the scheme of photoresist, after injecting, ion needs to remove photoresist, the removal of photoresist can adopt dry method to remove photoresist to add wet method remove photoresist technology, the also polymer that can only remove photoresist and may be generated by etching technics in the step 2 with wet method.As having only dielectric layer on the silicon substrate, then the removal of dielectric layer is consistent with the removal step of silica in the step 3.
And in oxidation processes, because of the silicon easier oxidized (oxidized amount is directly proportional with the volume density of injection region ion) after the ion injection, so the pattern of resulting silica is consistent in the distribution of silicon substrate with ion, the silicon oxide thickness that is trenched side-wall reduces (see figure 3) along with the increase of gash depth (apart from the distance at top), for final groove is more tilted, also can before oxidation processes, carry out The high temperature anneal, to adjust the distribution of ion on trenched side-wall, make it along the trenched side-wall horizontal proliferation, the thickness of the silica that should locate in the oxidation processes after making increases;
Remove the silica (also will remove dielectric layer if desired) of described trenched side-wall afterwards, and the silica that in oxidizing process, may on the silicon plane, grow, because of silica is more and more thinner distribution at the thickness of trenched side-wall from top to bottom, so finally obtain the groove (see figure 4) of trenched side-wall than the trenched side-wall inclination of institute's etching in the step 2.
Claims (6)
1. the preparation method of an inclined groove is characterized in that, has at least after etching forms groove on the silicon substrate of a mask layer on the surface, comprises the steps:
1) angle-tilt ion that described groove is rotated is injected, and the condition that described ion injects is set according to the angle of inclination of the groove that described needs obtain;
2) then carry out oxidation processes, make the silica of trenched side-wall turn to silica;
3) mask layer on the described silicon substrate of removal and the silica of described trenched side-wall obtain the groove of trenched side-wall than the trenched side-wall inclination of institute's etching in the step 2.
2. according to the described preparation method of claim 1, it is characterized in that: comprise also before the described step 2 that the silicon chip to carrying out after ion injects carries out the step that high-temperature process distributes the ion of described injection again.
3. according to claim 1 or 2 described preparation methods, it is characterized in that: described mask layer is dielectric layer or photoresist layer; When described mask layer was photoresist layer, the mask layer in the described step 3 on the removal silicon substrate was adjusted into after step 1 and carries out.
4. according to claim 1 or 2 described preparation methods, it is characterized in that: the ion that injects in the described step 3 be phosphorus, arsenic, boron, germanium or silicon any or for comprise above-mentioned any ion material.
5. according to the described preparation method of claim 3, it is characterized in that: the ion that injects in the described step 3 be phosphorus, arsenic, boron, germanium or silicon any or for comprise above-mentioned any ion material.
6. according to claim 1 or 2 described preparation methods, be characterised in that: be injected to repeatedly the different injection of ion implanting conditions in the described step 3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008100441206A CN101752203B (en) | 2008-12-17 | 2008-12-17 | Preparation method of inclined groove |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008100441206A CN101752203B (en) | 2008-12-17 | 2008-12-17 | Preparation method of inclined groove |
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| Publication Number | Publication Date |
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| CN101752203A true CN101752203A (en) | 2010-06-23 |
| CN101752203B CN101752203B (en) | 2012-06-20 |
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| CN2008100441206A Active CN101752203B (en) | 2008-12-17 | 2008-12-17 | Preparation method of inclined groove |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102709226A (en) * | 2012-06-21 | 2012-10-03 | 上海华力微电子有限公司 | Shallow groove isolation formation method and semiconductor device manufacturing method |
| CN103151257A (en) * | 2013-03-14 | 2013-06-12 | 上海华力微电子有限公司 | Method for manufacturing sigma-shaped silicon grooves |
| CN106960783A (en) * | 2016-01-12 | 2017-07-18 | 中芯国际集成电路制造(上海)有限公司 | A kind of semiconductor devices and preparation method thereof, electronic installation |
| CN110911279A (en) * | 2019-11-22 | 2020-03-24 | 上海集成电路研发中心有限公司 | Forming method of inclined hole |
| CN110911350A (en) * | 2019-11-22 | 2020-03-24 | 上海集成电路研发中心有限公司 | Forming method of inclined hole |
| CN115039004A (en) * | 2020-02-06 | 2022-09-09 | Ntt 电子股份有限公司 | Optical device manufacturing method and manufacturing device based on local etching |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6953723B2 (en) * | 2004-02-02 | 2005-10-11 | Nanya Technology Corporation | Method for forming bottle shaped trench |
| CN1949460A (en) * | 2005-10-12 | 2007-04-18 | 茂德科技股份有限公司 | Method for forming bottle type slot |
-
2008
- 2008-12-17 CN CN2008100441206A patent/CN101752203B/en active Active
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102709226A (en) * | 2012-06-21 | 2012-10-03 | 上海华力微电子有限公司 | Shallow groove isolation formation method and semiconductor device manufacturing method |
| CN103151257A (en) * | 2013-03-14 | 2013-06-12 | 上海华力微电子有限公司 | Method for manufacturing sigma-shaped silicon grooves |
| CN103151257B (en) * | 2013-03-14 | 2016-03-23 | 上海华力微电子有限公司 | A kind of manufacture method of Σ type silicon trench |
| CN106960783A (en) * | 2016-01-12 | 2017-07-18 | 中芯国际集成电路制造(上海)有限公司 | A kind of semiconductor devices and preparation method thereof, electronic installation |
| CN106960783B (en) * | 2016-01-12 | 2020-03-10 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor device, preparation method thereof and electronic device |
| CN110911279A (en) * | 2019-11-22 | 2020-03-24 | 上海集成电路研发中心有限公司 | Forming method of inclined hole |
| CN110911350A (en) * | 2019-11-22 | 2020-03-24 | 上海集成电路研发中心有限公司 | Forming method of inclined hole |
| CN115039004A (en) * | 2020-02-06 | 2022-09-09 | Ntt 电子股份有限公司 | Optical device manufacturing method and manufacturing device based on local etching |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101752203B (en) | 2012-06-20 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140108 |
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Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
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Effective date of registration: 20140108 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |