CN101750792B - Color filter substrate for in-plain switching mode liquid crystal display device and method of fabricating the same - Google Patents

Color filter substrate for in-plain switching mode liquid crystal display device and method of fabricating the same Download PDF

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CN101750792B
CN101750792B CN2009101668194A CN200910166819A CN101750792B CN 101750792 B CN101750792 B CN 101750792B CN 2009101668194 A CN2009101668194 A CN 2009101668194A CN 200910166819 A CN200910166819 A CN 200910166819A CN 101750792 B CN101750792 B CN 101750792B
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back side
side electrodes
zno
substrate
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CN101750792A (en
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徐景韩
金撤雨
刘容雨
朴文基
金淏洙
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LG Display Co Ltd
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LG Display Co Ltd
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133512—Light shielding layers, e.g. black matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G02F1/133519—Overcoatings
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Liquid Crystal (AREA)
  • Optical Filters (AREA)

Abstract

The invention relates to a color filter substrate for an in-plane switching mode liquid crystal display device and a manufacture method thereof. The color filter substrate includes a first rear side electrode on a first surface of a substrate and formed of a first transparent conductive material including zinc oxide (ZnO) and Al2O3 and CaO, or not including CaO, the first rear side electrode having a first thickness; a black matrix having a lattice shape and a plurality of openings in the lattice shape, the black matrix disposed on a second surface, which is opposite to the first surface, of the substrate; a color filter layer in the plurality of openings; and an overcoat layer on the black matrix and the color filter layer.

Description

The filter substrate of in-plain switching mode liquid crystal display device and manufacture method thereof
The application requires to enjoy the rights and interests of the korean patent application No.10-2008-0125211 that submitted in Korea S on Dec 10th, 2008, and this application is hereby incorporated by reference.
Technical field
The present invention relates to in-plain switching (IPS) mode liquid crystal and show (LCD) device, more specifically, the filter substrate that relates to the production cost with reduction and have the light characteristic of improvement, and the manufacture method of array base palte.
Background technology
Along with society really enters the information age, introduced the panel display apparatus with excellent properties such as thin, the lightweight and low energy consumption of external form.In these devices, the LCD device is widely used in notebook, monitor, TV etc., and this is because they have high-contrast and the characteristic that is enough to show moving image.
Usually, the LCD device comprises first and second substrates opposing one another, and is arranged on the liquid crystal layer that comprises liquid crystal molecule between the first and second substrates.On the first and second substrates, form respectively the first and second electrodes.When to the first and second electrode application voltage when producing electric field, by the electric field driven liquid crystal layer, thereby can show image by the control transmittance.
Fig. 1 is the decomposition diagram of prior art LCD device.LCD device 1 comprises the first and second substrates 12 and 22, and liquid crystal layer 30.The first and second substrates 12 and 22 and arrange liquid crystal layer 30 between the two at it toward each other.
First substrate 12 comprises grid line 14, data line 16, thin film transistor (TFT) (TFT) " Tr " and pixel electrode 18.The first substrate 12 that comprises these elements is known as array base palte 10.Grid line 14 intersects each other with data line 16, thereby forms a zone that is called pixel region " P " between grid line 14 and data line 16.At the intersection formation TFT " Tr " of grid line 14 with data line 16, in pixel region " P ", form the pixel electrode 18 that is connected with TFT " Tr ".
Second substrate 22 comprises black matrix" 25, color-filter layer 26 and public electrode 28.The second substrate 22 that comprises these elements is known as filter substrate 20.Black matrix" 25 has the grille-like such as the grid line 14 on the first substrate 12 and data line 16, to cover the non-display area of first substrate 12.Black matrix" 25 stops the light leak in the non-display area.Color-filter layer 26 comprises first, second, and third sub-color filter 26a, 26b and 26c.Sub-color filter 26a, each among 26b and the 26c has red, green and blue look R, and G and B be a kind of color wherein, and corresponding with each pixel region " P ".Public electrode 28 is formed on black matrix" 25 and the color-filter layer 26, and covers the whole surface of second substrate 22.
As mentioned above, LCD device 1 comprises the filter substrate 20 that is formed with public electrode 28, is formed with the array base palte 10 of pixel electrode 18, and is clipped in the liquid crystal layer 30 between the two substrates.Drive liquid crystal layer 30 by the vertical electric field that produces between public electrode 28 and the pixel electrode 18.LCD device 1 has advantage aspect transmissivity and the aperture ratio.But, because liquid crystal layer drives existent defect aspect the visual angle by vertical electric field.
Can use in-plain switching (IPS) mode LCD device to solve above-mentioned limitation.Fig. 2 is the sectional view of prior art IPS mode LCD device.As shown in Figure 2, IPS mode LCD device 40 comprises the first and second substrates 50 and 60, and the liquid crystal layer 70 that is clipped in the middle.Public electrode 55 and pixel electrode 58 all are formed on the first substrate 50, thereby drive liquid crystal layer 70 by the horizontal component of electric field L that produces between public electrode 55 and the pixel electrode 58.
When applying voltage to IPS mode LCD device 40, public electrode 55 and the liquid crystal molecule above the pixel electrode 58 do not change.But, because horizontal component of electric field L, the liquid crystal molecule between public electrode 55 and the pixel electrode 58 is along horizontal.Because liquid crystal molecule is arranged by horizontal component of electric field L, IPS mode LCD device 40 has the characteristic at wide visual angle.
After the first and second substrates 50 and 60 form said elements, along the edge formation seal pattern (not shown) of the first and second substrates 50 and 60.Then, in the space between Liquid crystal pour first substrate 50 and the second substrate 60, first and second substrate 50 and 60 is bonded to each other, thereby produces IPS mode LCD device 40.When the first and second substrates 50 and 60 form described element, at the platform for the treatment of facility the first and second substrates 50 and 60 are set.In this case, produce static at the first and second substrates 50 and 60.Owing to have line of electric force and by the electrode that metal material forms, be easy to remove static at first substrate 50.But, owing to do not have the conductive material element at second substrate 60 for IPS mode LCD device, static can cause damage to second substrate 60.In final products, also can there be these problems.Owing to do not have the conductive material element at the second substrate 60 that is known as filter substrate, be not easy to be removed by the electric charge of generation of static electricity.
In order to address these problems, by the deposit transparent conductive material, such as tin indium oxide (ITO) and indium zinc oxide (IZO), after the rear surface of second substrate 60 forms the back side electrodes (not shown), second substrate 60 is processed.Yet, because ITO or IZO are very expensive, increased manufacturing cost.
In addition, in again processing (rework process) process of filter substrate, also there is another problem.When having problems in color-filter layer, black matrix" or the external coating, need again to process.ITO and IZO are not exposed for the impact of the etchant of removing color-filter layer or black matrix", and ITO and IZO can be subject to the impact for the etchant of removing external coating.When having problems in the color-filter layer, after removing color-filter layer and black matrix", filter substrate is processed.But, when having problems in the external coating, also part has been removed back side electrodes ITO or IZO in the process of removing external coating.Thereby, the processing of back side electrodes need to be removed fully, thereby also production cost can be increased.
Summary of the invention
The present invention relates to a kind of filter substrate for IPS mode LCD device, with and manufacture method, described substrate has overcome basically because of the restriction of prior art and the caused one or more problems of shortcoming.
The object of the present invention is to provide a kind of filter substrate for IPS mode LCD device, described substrate can prevent the infringement that static produces.
The object of the present invention is to provide a kind of manufacturing process of the filter substrate for IPS mode LCD device, described technique can reduce manufacturing cost.
To provide supplementary features of the present invention and advantage in description subsequently, its part can obviously draw by describing, and perhaps can learn by enforcement of the present invention.By the structure that specifically provides in text description and claim and the accompanying drawing, can realize and obtain purpose of the present invention and other advantages.
In order to realize these and other advantages and according to purpose of the present invention, as embody and general description herein, a kind of filter substrate for in-plain switching mode liquid crystal display device, comprise the first back side electrodes that is on the substrate first surface and is formed by transparent conductive material, the first back side electrodes has the first thickness, and this transparent conductive material comprises zinc paste (ZnO), Al 2O 3, Ga 2O 3And CaO, and the % by weight of ZnO is greater than Al 2O 3, Ga 2O 3With the % by weight summation of CaO, perhaps this first transparent conductive material comprises ZnO, Al 2O 3And Ga 2O 3, and the % by weight of ZnO is greater than Al 2O 3And Ga 2O 3The % by weight summation; Have grille-like and have the black matrix" of a plurality of openings in grille-like, this black matrix" is arranged on the second surface relative with first surface of substrate; Be in the color-filter layer in a plurality of openings; And be in external coating on black matrix" and the color-filter layer.
In another aspect of this invention, a kind of manufacture method of the filter substrate for in-plain switching mode liquid crystal display device, be included in and form the first back side electrodes that is formed by the first transparent conductive material on the first surface of substrate, this first back side electrodes has the first thickness, and this first transparent conductive material comprises zinc paste (ZnO), Al 2O 3, Ga 2O 3And CaO, and the % by weight of ZnO is greater than Al 2O 3, Ga 2O 3With the % by weight summation of CaO, perhaps this first transparent conductive material comprises ZnO, Al 2O 3And Ga 2O 3, and the % by weight of ZnO is greater than Al 2O 3And Ga 2O 3The % by weight summation; Formation has grille-like and have the black matrix" of a plurality of openings in grille-like, and described black matrix" is arranged on the second surface relative with first surface of substrate; In a plurality of openings, form color-filter layer; And form external coating at black matrix" and color-filter layer.
In another aspect of this invention, a kind of again processing of the filter substrate for being used for in-plain switching mode liquid crystal display device, be included in and form the first back side electrodes that is formed by the first transparent conductive material on the first surface of substrate, described the first back side electrodes has the first thickness, and described the first transparent conductive material comprises zinc paste (ZnO), Al 2O 3, Ga 2O 3And CaO, and the % by weight of ZnO is greater than Al 2O 3, Ga 2O 3With the % by weight summation of CaO, perhaps this first transparent conductive material comprises ZnO, Al 2O 3And Ga 2O 3, and the % by weight of ZnO is greater than Al 2O 3And Ga 2O 3The % by weight summation; Formation has grille-like and have the black matrix" of a plurality of openings in grille-like, and described black matrix" is arranged on the second surface relative with first surface of substrate; In a plurality of openings, form color-filter layer; Form external coating at black matrix" and color-filter layer; And the substrate that will form the first back side electrodes, black matrix", color-filter layer and external coating immerses in the basic stripping solution of potassium hydroxide (KOH), to remove the first back side electrodes, black matrix", color-filter layer and external coating fully.
Should be appreciated that the general description of front and detailed description subsequently all are exemplary and explanatory, be intended to provide the of the present invention further explanation to as claimed in claim.
Description of drawings
The included accompanying drawing that is used for providing the further understanding of the present invention and a formation instructions part is set forth embodiments of the invention, is used from text description one and explains principle of the present invention.
Fig. 1 is the decomposition diagram of prior art LCD device;
Fig. 2 is the sectional view of prior art IPS mode LCD device;
Fig. 3 A for showing according to the first embodiment of the present invention, is used for the sectional view of manufacturing process of the filter substrate of IPS mode LCD device to 3F;
Fig. 4 A for showing according to a second embodiment of the present invention, is used for the sectional view of manufacturing process of the filter substrate of IPS mode LCD device to 4C;
Fig. 5 has been for having set forth according to a second embodiment of the present invention, is used to form the synoptic diagram for the sputtering equipment of the back side electrodes of the filter substrate of IPS mode LCD device.
Embodiment
To describe preferred embodiment in detail now, the example of described embodiment is set forth in the accompanying drawings.
Fig. 3 A for showing according to the first embodiment of the present invention, is used for the sectional view of manufacturing process of the filter substrate of IPS mode LCD device to 3F.
In Fig. 3 A, substrate 110 is arranged in the chamber (not shown) of sputtering equipment, and forms back side electrodes 113 by a series of magnetron sputtering techniques at the first surface of substrate 110.Back side electrodes 113 can have about 200 thickness to about 300 dusts.Back side electrodes 113 is by comprising that zinc paste (ZnO) forms for the transparent conductive material of principal ingredient.ZnO is the low price material.For example, in ZnO, add aluminium oxide (Al 2O 3), gallium oxide (Ga 2O 3) and calcium oxide (CaO).In ZnO, add about 1 Al to about 3 % by weight 2O 3, about 0.2 to the Ga of about 2 % by weight 2O 3With about 0.01 CaO to about 0.05 % by weight.Also can not comprise CaO.
When the transparent conductive material that is used for back side electrodes 113 comprises four kinds of compositions, ZnO, Al 2O 3, Ga 2O 3Have respectively about 94.95 to 98.79 % by weight, about 1 with CaO and arrive about 0.05 % by weight to about 3 % by weight, about 0.2 to about 2 % by weight and about 0.01.Alternatively, when the transparent conductive material that is used for back side electrodes 113 comprises three kinds of compositions, ZnO, Al 2O 3And Ga 2O 3Have respectively about 95 and arrive about 98.8 % by weight, about 1 to about 3 % by weight and about 0.2 to about 2 % by weight.
Add divalence or trivalent composition in order to improve the target property of sputter and conduction property.For example, when back side electrodes 113 be ZnO about 200 dusts, that comprise 96.99 % by weight, the Al of 2 % by weight by thickness 2O 3, the Ga of 1 % by weight 2O 3When forming with the transparent conductive material of the CaO of 0.01 % by weight, back side electrodes 113 has 97.8% average transmittance for 400nm to the light of 700nm wavelength coverage, and has 246.8*10 -4Ω cm -1Ratio resistance (specific resistance).Alternatively, when forming thickness by above-mentioned transparent conductive material and be the back side electrodes 113 of 300 dusts, back side electrodes 113 has 96.7% average transmittance for 400nm to the light of 700nm wavelength coverage, and has 34.6*10 -4Ω cm -1Ratio resistance.
On the other hand, when being formed thickness by ITO and be the back side electrodes 113 of 200 dusts, back side electrodes 113 has 96.8% average transmittance for 400nm to the light of 700nm wavelength coverage, and has 3.7*10 -4Ω cm -1Ratio resistance.
To comprise that ZnO compares as the back side electrodes of principal ingredient and the character of ITO back side electrodes, when they had same thickness, transmissivity had improved about 1.1%.Simultaneously, because the ratio resistance of ITO back side electrodes is less than the ratio resistance of back side electrodes of the present invention, the conduction property of back side electrodes slightly descends among the present invention.Yet the back side electrodes that requires to be used for control static has less than 500*10 -4Ω cm -1Ratio resistance.Thereby, even the back side electrodes among the present invention has the ratio resistance larger than ITO back side electrodes, can not have problems yet.As mentioned above, the ratio resistance of back side electrodes of the present invention is being no problem aspect the control static, and transmissivity has advantage.In addition, because ZnO is more cheap than ITO or IZO, filter substrate of the present invention has advantage aspect production cost.
In addition, the sputtering technology that is used for ITO or IZO needs purity oxygen and argon gas, and only needs argon gas with ZnO as the sputtering technology of the transparent conductive material of principal ingredient.Therefore, further reduced production cost.
In Fig. 3 B, at the second surface formation black organic insulator (not shown) of the substrate 110 that has formed back side electrodes 113.Back side electrodes 113 and black organic insulator are formed on the apparent surface of substrate 110.The black organic insulator is formed by black resin or epoxy resin with black.The black organic insulator has photonasty.
Comprise transmission (transmissive) part and stop (blocking) the first exposed mask (exposing mask) (not shown) partly the setting of black organic insulator.Use the first exposed mask that the black organic insulator is exposed, and develop, form the black matrix" 115 that has grille-like and comprise the first to the 3rd opening op1, op2 and op3.The first to the 3rd opening op1, op2 and op3 can alternately arrange each other.
Below, in Fig. 3 C, coated red photoresistance on black matrix" 115 (red resist) material forms red photoresistance material layer 117.At red photoresistance material layer 117 the second exposed mask 190 that comprises transmissive portion TA and stop portions BA is set, and carries out exposure technology.
Owing to use the minus material as chromatic photoresist (color resist) material layer, for example the transmissive portion TA of red photoresistance material layer 117, the second exposed masks 190 with will form the regional corresponding of red color filter pattern 120a (Fig. 3 D).
Next, in Fig. 3 D, the red photoresistance material layer 117 (Fig. 3 C) that has exposed is developed, in the first opening op1, form red color filter pattern 120a.The edge of red color filter pattern 120a can be partly overlapping with black matrix" 115.
Then, in Fig. 3 E, by the manufacturing process identical with red color filter pattern 120a, in the second and the 3rd opening op2 and op3, form respectively green color filter pattern 120b and blue color filter pattern 120c.Red, green and blue color filter pattern 120a, 120b and 120c consist of color-filter layer 120 at substrate 110.That is, red, green and blue color filter pattern 120a, 120b and 120c are in respectively among the first to the 3rd opening op1, the op2 and op3 of the black matrix" 115 with grille-like.Red, green and blue color filter pattern 120a, 120b and 120c can alternately arrange each other.As red color filter pattern 120a, the edge of green and blue color filter pattern 120b and 120c also can be partly overlapping with black matrix" 115.Red, green and blue color filter pattern 120a, 120b and 120c are formed by inorganic insulating material.
Below, in Fig. 3 F, water white transparency organic insulation at color-filter layer 120 and black matrix" 115 coating such as optical pressure gram forces (photo-acryl) forms external coating 125, thereby makes the filter substrate 150 for IPS mode LCD device according to the present invention.Form external coating 125 and be in order to protect color-filter layer 120, and smooth surface is provided.
Although do not illustrate among the figure, can by applying and composition photosensitive organic insulating material, form and black matrix" 115 corresponding patterning septs at external coating 125.When using spherical spacer, do not need the patterning sept.
If in cell processing, for example in the formation technique of black matrix" 115, generation problem in the formation technique of color-filter layer 120 or the formation technique of external coating 12 is then reused (reuse) transparency carrier 110 by again processing.For example, when in the formation technique of the formation technique of the formation technique of black matrix" 115, color-filter layer 120 or external coating 125, having problems, filter substrate 150 transferred to again process line, thereby remove whole external coating 125, color-filter layer 120 and black matrix" 115 by again processing.Even only there is defective in the formation technique of external coating 125, not only to removes external coating 125, and will remove color-filter layer 120 and black matrix" 115.
In processing procedure again, because black matrix" 115, color-filter layer 120 and external coating 125 are formed by organic insulation, the basic stripping solution of use potassium hydroxide (KOH) removes black matrix" 115, color-filter layer 120 and external coating 125.When with black matrix" 115, when color-filter layer 120 and external coating 125 immerse in the KOH base stripping solution, zno-based (ZnO-based) back side electrodes 113 also reacts with KOH base stripping solution (stripping solution), thereby back side electrodes 113 also is removed.Therefore, after again processing, obtain clean transparency carrier 110.
In experiment, in the KOH base stripping solution with substrate immersion 13% under 70 degrees centigrade, the top substrate that is formed with black matrix", color-filter layer, external coating and back side electrodes is processed again.After 1 second, the zno-based material of back side electrodes partly remains on the transparency carrier in immersing solution, and the zno-based material is completely removed subsequently, can obtain clean transparency carrier.
On the other hand, when back side electrodes was formed by ITO, ITO and KOH base stripping solution reacted lentamente, thereby after removing other elements fully, need the very long time could remove the ITO back side electrodes fully.In addition, because ITO does not react with the KOH stripping solution, after again processing, can not use the ITO layer as back side electrodes.Therefore, if back side electrodes is formed by ITO, need to have the strong acid of comprising, for example another of the stripping solution of HCl again processed and carried out another kind in the line and process and remove the ITO back side electrodes fully.
As a result, compared with prior art, can simplify the again treatment process to the filter substrate that is used for IPS mode LCD device.In addition, owing to do not need another again to process line, aspect production cost, there is advantage.
Fig. 4 A is the sectional view that shows the manufacturing process of the filter substrate that is used for according to a second embodiment of the present invention IPS mode LCD device to 4C.
In Fig. 4 A, substrate 210 is arranged in the chamber (not shown) of the sputtering equipment that comprises ITO or IZO target, and forms the first back side electrodes 213a by magnetron sputtering technique at the first surface of substrate 210.The the first back side electrodes 213a that is formed by ITO or IZO has about 500 dusts to the thickness of about 100 dusts.
In Fig. 4 B, the substrate 210 that has formed the first back side electrodes 213a transferred to comprise take ZnO as principal ingredient and comprise Al 2O 3, Ga 2O 3With CaO or do not contain in the chamber (not shown) of sputtering equipment of target body of CaO, and form the second back side electrodes 213b by a series of magnetron sputtering techniques at the first back side electrodes 213a.The second back side electrodes 213b can have about 100 dusts to the thickness of about 200 dusts.For example, the thickness sum of the first and second back side electrodes 213a and 213b can be for about 200 to about 300 dusts.The first and second back side electrodes 213a and 213b consist of back side electrodes 213.
Add about 1 Al to about 3 % by weight to ZnO 2O 3, about 0.2 to the Ga of about 2 % by weight 2O 3, and about 0.01 CaO to about 0.05 % by weight.Can not comprise CaO.When the transparent conductive material that is used for the second back side electrodes 213b comprises four kinds of compounds, ZnO, Al 2O 3, Ga 2O 3With CaO have respectively about 94.95 to about 98.79 % by weight, about 1 to about 3 % by weight, about 0.2 to about 2 % by weight and about 0.01 to about 0.05 % by weight.Alternatively, when the transparent conductive material that is used for the second back side electrodes 213b comprises three kinds of compounds, ZnO, Al 2O 3And Ga 2O 3Have respectively about 95 to about 98.8 % by weight, about 1 to about 3 % by weight, and about 0.2 arrives about 2 % by weight.Can in same sputtering equipment, carry out the technique that is used to form the first and second back side electrodes 213a and 213b.
Fig. 5 is for showing according to a second embodiment of the present invention, is used to form the synoptic diagram for the sputtering equipment of the back side electrodes of the filter substrate of IPS mode LCD device.In Fig. 5, sputtering equipment 270 has anti-" C " shape path for substrate 210, and comprises the first and second chambers 275 and 280.The first target body 283 that is in the first chamber 275 comprises different targets with the second target body 285 in being in the second chamber 280.Alternatively, the first target body 283 that is in the first chamber 275 can comprise identical target with the second target body 285 in being in the second chamber 280.
The first target body 283 in being in the first chamber 275 is when the second target body 285 in being in the second chamber 280 comprises different targets, and the first target body 283 comprises ITO or IZO, and the second target body 285 comprises ZnO and the Al as principal ingredient 2O 3, Ga 2O 3And CaO, perhaps do not contain CaO.Substrate 210 in succession (sequentially) is passed in the first and second chambers 275 and 280, thus on substrate 210 stacked the first back side electrodes 213a (Fig. 4 B) and the second back side electrodes 213b (Fig. 4 B).When substrate 210 formation comprise the back side electrodes 213 (Fig. 4 B) of the first back side electrodes 213a (Fig. 4 B) and the second back side electrodes 213b (Fig. 4 B), improved the work efficiency of sputtering equipment 270.
Referring again to Fig. 4 B, back side electrodes 213 comprises the ITO that is on the substrate 210 or the first back side electrodes 213a of IZO material, and is in the second back side electrodes 213b of the zno-based material on the first back side electrodes 213a.Alternatively, back side electrodes can comprise the first back side electrodes of the zno-based material that is on the substrate and the second back side electrodes of ITO or IZO material.
For example, when the first electrode of zno-based material has the thickness of 150 dusts, when the second electrode of ITO material had the thickness of 50 dusts, back side electrodes had 98.9% average transmittance for 400nm to the light of 700nm wavelength coverage, and has 260.0*10 -4Ω cm -1Ratio resistance.Alternatively, when the first electrode of zno-based material has the thickness of 100 dusts, and the second electrode of ITO material is when having the thickness of 100 dusts, and back side electrodes has 97.6% average transmittance for 400nm to the light of 700nm wavelength coverage, and has 15.3*10 -4Ω cm -1Ratio resistance.
As mentioned above, prior art form and have the back side electrodes of 200 dust thickness by single ITO layer, have 96.8% average transmittance for 400nm to the light of 700nm wavelength coverage, and have 3.7*10 -4Ω cm -1Ratio resistance.Similar with first embodiment of the invention, the back side electrodes 213 of the second embodiment has the transmissivity of improvement.But, the electric conductivity of back side electrodes slightly descends among the second embodiment.Yet the back side electrodes that requires to be used for control static has less than 500*10 -4Ω cm -1Ratio resistance.Therefore, even have larger ratio resistance with back side electrodes that the back side electrodes of the ITO material of prior art is compared among the present invention, can not cause any problem yet.
Then, in Fig. 4 C, by the technique of mentioning among the first embodiment, order (sequentially) forms black matrix" 215, color-filter layer 220 and external coating 225 on the second surface of the substrate 210 that is formed with back side electrodes 213.Second surface is relative with first surface.
One of them is formed by ITO or IZO at filter substrate 250, the first and second back side electrodes 213a that are used for IPS mode LCD device according to the second embodiment and 213b.Yet another among the first and second back side electrodes 213a and the 213b formed by the zno-based material, still has advantage aspect production cost.
For a person skilled in the art, under the condition that does not depart from the spirit or scope of the present invention, obviously can make multiple modification or change to the present invention.Therefore, fall under the scope and the situation within the equivalent scope thereof of claims in these modification and change, the invention is intended to cover modification of the present invention and change.

Claims (20)

1. filter substrate that is used for in-plain switching mode liquid crystal display device comprises:
The first back side electrodes that is on the first surface of substrate and is formed by the first transparent conductive material, wherein this first transparent conductive material comprises ZnO, Al 2O 3, Ga 2O 3And CaO, and the % by weight of ZnO is greater than Al 2O 3, Ga 2O 3With the % by weight summation of CaO, perhaps this first transparent conductive material comprises ZnO, Al 2O 3And Ga 2O 3, and the % by weight of ZnO is greater than Al 2O 3And Ga 2O 3The % by weight summation, this first back side electrodes has the first thickness;
Black matrix" with grille-like, this black matrix" are on the second surface relative with first surface of substrate;
Be in the color-filter layer in a plurality of openings of grille-like; And
Be in the external coating on black matrix" and the color-filter layer.
2. substrate according to claim 1, wherein, described the first thickness has the scope of 200 to 300 dusts.
3. substrate according to claim 1, wherein, described the first transparent conductive material comprises the ZnO of 94.95 to 98.79 % by weight, the Al of 1 to 3 % by weight 2O 3, 0.2 to 2 % by weight Ga 2O 3, and the CaO of 0.01 to 0.05 % by weight.
4. substrate according to claim 1, wherein, described the first transparent conductive material comprises the ZnO of 95 to 98.8 % by weight, the Al of 1 to 3 % by weight 2O 3, and the Ga of 0.2 to 2 % by weight 2O 3
5. substrate according to claim 1, also comprise by the second transparent conductive material tin indium oxide (ITO) or indium zinc oxide (IZO) the second back side electrodes that form and that have the second thickness, wherein, the second back side electrodes is arranged between first surface and the first back side electrodes, and perhaps the first back side electrodes is arranged between first surface and the second back side electrodes.
6. substrate according to claim 5, wherein, the first thickness has the scope of 100 to 250 dusts, and the second thickness has the scope of 50 to 100 dusts.
7. substrate according to claim 6, wherein, the first thickness and the second thickness sum have the scope of 200 to 300 dusts.
8. substrate according to claim 5, wherein, described the first transparent conductive material comprises the ZnO of 94.95 to 98.79 % by weight, the Al of 1 to 3 % by weight 2O 3, 0.2 to 2 % by weight Ga 2O 3, and the CaO of 0.01 to 0.05 % by weight.
9. substrate according to claim 5, wherein, described the first transparent conductive material comprises the ZnO of 95 to 98.8 % by weight, the Al of 1 to 3 % by weight 2O 3, and the Ga of 0.2 to 2 % by weight 2O 3
10. manufacture method that is used for the filter substrate of in-plain switching mode liquid crystal display device comprises:
First surface at substrate forms the first back side electrodes that is formed by the first transparent conductive material, and wherein this first transparent conductive material comprises ZnO, Al 2O 3, Ga 2O 3And CaO, and the % by weight of ZnO is greater than Al 2O 3, Ga 2O 3With the % by weight summation of CaO, perhaps this first transparent conductive material comprises ZnO, Al 2O 3And Ga 2O 3, and the % by weight of ZnO is greater than Al 2O 3And Ga 2O 3The % by weight summation, this first back side electrodes has the first thickness;
Formation has the black matrix" of grille-like, and this black matrix" is on the second surface relative with first surface of substrate;
In a plurality of openings of grille-like, form color-filter layer; And
Form external coating at black matrix" and color-filter layer.
11. method according to claim 10, wherein, described the first thickness has the scope of 200 to 300 dusts.
12. method according to claim 10, wherein, described the first transparent conductive material comprises the ZnO of 94.95 to 98.79 % by weight, the Al of 1 to 3 % by weight 2O 3, 0.2 to 2 % by weight Ga 2O 3, and the CaO of 0.01 to 0.05 % by weight.
13. method according to claim 10, wherein, described the first transparent conductive material comprises the ZnO of 95 to 98.8 % by weight, the Al of 1 to 3 % by weight 2O 3, and the Ga of 0.2 to 2 % by weight 2O 3
14. method according to claim 10, also comprise forming and form and have the second back side electrodes of the second thickness by the second transparent conductive material tin indium oxide (ITO) or indium zinc oxide (IZO), wherein, before the step that forms the first back side electrodes, carry out the step that forms the second back side electrodes, thereby between first surface and the first back side electrodes, the second back side electrodes is set, perhaps after the step that forms the first back side electrodes, carry out the step that forms the second back side electrodes, thereby between first surface and the second back side electrodes, the first back side electrodes is set.
15. method according to claim 14, wherein, described the first thickness has the scope of 100 to 250 dusts, and the second thickness has the scope of 50 to 100 dusts.
16. method according to claim 15, described the first thickness and the second thickness sum have the scope of 200 to 300 dusts.
17. method according to claim 14, wherein, described the first transparent conductive material comprises the ZnO of 94.95 to 98.79 % by weight, the Al of 1 to 3 % by weight 2O 3, 0.2 to 2 % by weight Ga 2O 3, and the CaO of 0.01 to 0.05 % by weight.
18. method according to claim 14, wherein, described the first transparent conductive material comprises the ZnO of 95 to 98.8 % by weight, the Al of 1 to 3 % by weight 2O 3, and the Ga of 0.2 to 2 % by weight 2O 3
19. an again disposal route that is used for the filter substrate of in-plain switching mode liquid crystal display device comprises:
First surface at substrate forms the first back side electrodes that is formed by the first transparent conductive material, and wherein this first transparent conductive material comprises ZnO, Al 2O 3, Ga 2O 3And CaO, and the % by weight of ZnO is greater than Al 2O 3, Ga 2O 3With the % by weight summation of CaO, perhaps this first transparent conductive material comprises ZnO, Al 2O 3And Ga 2O 3, and the % by weight of ZnO is greater than Al 2O 3And Ga 2O 3The % by weight summation, this first back side electrodes has the first thickness;
Formation has the black matrix" of grille-like, and this black matrix" is on the second surface relative with first surface of substrate;
In a plurality of openings of grille-like, form color-filter layer;
Form external coating at black matrix" and color-filter layer; And
The substrate that will be formed with the first back side electrodes, black matrix", color-filter layer and external coating immerses in the basic stripping solution of potassium hydroxide (KOH), to remove the first back side electrodes, black matrix", color-filter layer and external coating fully.
20. method according to claim 19 also is included in formation the first back side electrodes before or forms after the first back side electrodes the second back side electrodes that formation is formed by the second transparent conductive material that comprises ITO or IZO.
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