CN101750563A - Structure for detecting short circuit of through holes or contact holes in semiconductor device - Google Patents
Structure for detecting short circuit of through holes or contact holes in semiconductor device Download PDFInfo
- Publication number
- CN101750563A CN101750563A CN200810044122A CN200810044122A CN101750563A CN 101750563 A CN101750563 A CN 101750563A CN 200810044122 A CN200810044122 A CN 200810044122A CN 200810044122 A CN200810044122 A CN 200810044122A CN 101750563 A CN101750563 A CN 101750563A
- Authority
- CN
- China
- Prior art keywords
- hole
- short circuit
- contact hole
- holes
- metal connecting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
The invention discloses a structure for detecting the short circuit of through holes or contact holes in a semiconductor device. Two groups of adjacent metal connecting lines are arranged on a metal layer above an interlamination membrane of the through holes or the contact holes which are arranged regularly; and in a normal state, the two groups of metal connecting lines are not connected and led out by respective through holes. By the structure, the invention can conveniently detect the short circuit of the through holes or the contact holes caused by various reasons, thereby adjusting processes in time and guaranteeing the yield of products.
Description
Technical field
The present invention relates to a kind of detection architecture of semiconductor devices, through hole or contact hole structure for detecting short circuit in especially a kind of semiconductor devices.
Background technology
Now, the structure of semi-conductor chip all is to make various devices on silicon substrate, and the line by the metal level above the device interconnects device then, thereby forms the circuit of various different structures.And in the semi-conductor chip, be used for realizing that by through hole or contact hole the line with device and metal level couples together, and specific circuit node on the end points of device or the metal level is drawn, thereby can be connected with the circuit beyond the chip.But, owing to the semiconductor core blade technolgy becomes increasingly complex, in the semiconductor fabrication process, may be because of various factors, such as interlayer film CMP (chemically mechanical polishing), tungsten CMP, photoetching interference effect, particle, film are subside etc. and to be caused tungsten residual and cause short circuit, finally cause yield to descend.
At the problems referred to above, not at the special electric performance test structure of through hole and contact hole short circuit, onlinely also can only lean against line visual examination (KLA) in the prior art, can only could confirm by the electrical characteristics failure analysis during inefficacy.
Summary of the invention
Technical matters to be solved by this invention provides through hole or contact hole structure for detecting short circuit in a kind of semiconductor devices, can detect the through hole that causes owing to a variety of causes or the short circuit of contact hole easily, thereby can in time adjust, guarantee the qualification rate of product technology.
For solving the problems of the technologies described above, the technical scheme of through hole or contact hole structure for detecting short circuit is in the semiconductor devices of the present invention, two groups of adjacent metal lines are set on the metal level on be provided with the interlayer film of regularly arranged through hole or contact hole, described two groups of metal connecting line not conductings mutually under normal condition, described two groups of metal connecting lines are drawn by its through hole separately.
The present invention is by said structure, can detect the through hole that causes owing to a variety of causes or the short circuit of contact hole easily, thereby can in time adjust the qualification rate of assurance product to technology.
Description of drawings
The present invention is further detailed explanation below in conjunction with drawings and Examples:
Fig. 1 and Fig. 2 are the sectional schematic diagram of through hole in the semiconductor devices of the present invention or contact hole structure for detecting short circuit embodiment;
Fig. 3, Fig. 4 and Fig. 5 are the vertical view of through hole in the semiconductor devices of the present invention or contact hole structure for detecting short circuit embodiment.
Reference numeral is among the figure, 1. silicon substrate; 2. device layer; 3. interlayer film; 4. through hole or contact hole; 5. metal connecting line; 6. tungsten; 7. the interlayer film of lower floor's through hole or contact hole; 8. draw through hole.
Embodiment
The invention provides through hole or contact hole structure for detecting short circuit in a kind of semiconductor devices, as depicted in figs. 1 and 2, two groups of adjacent metal lines are set on the metal level on be provided with the interlayer film of regularly arranged through hole or contact hole, described two groups of metal connecting line not conductings mutually under normal condition, described two groups of metal connecting lines are drawn by its through hole separately.
In order to save chip area, through hole or contact hole structure for detecting short circuit are arranged in the scribe line of chip in the semiconductor devices of the present invention.
As shown in Figure 1, preparation has various devices and forms device layer 2 on the silicon substrate 1, and device layer is provided with interlayer film 3, above the interlayer film 3 metal level can be set, with the device of device layer according to specific circuit turn-on.Through hole 4 is arranged on the interlayer film 3, with the metal level conducting on device layer under the interlayer film 3 and the interlayer film.Metal level is provided with described metal connecting line 5.Under the normal condition, it between the adjacent metal line 5 not conducting, but work as because interlayer film CMP (chemically mechanical polishing), tungsten CMP, photoetching interference effect, particle, film are subside etc. and to be caused tungsten 6 residual and when causing short circuit, two metal connecting lines 5 will conducting, just can detect the short circuit of contact hole whereby.
The semiconductor core sector-meeting that has is provided with a plurality of metal levels, and through hole or contact hole structure for detecting short circuit can also be arranged between a plurality of metal levels in the semiconductor devices of the present invention.As shown in Figure 2, because metal level is not in the growth of the position of scribe line, therefore understand the interlayer film 3 of direct growth last layer through hole on the interlayer film 7 of lower floor's through hole, interlayer film 3 is provided with through hole or contact hole 4, and the metal levels above the interlayer film 3 are provided with metal connecting line 5.Under the normal condition, it between the adjacent metal line 5 not conducting, but work as because interlayer film CMP (chemically mechanical polishing), tungsten CMP, photoetching interference effect, particle, film are subside etc. and to be caused tungsten 6 residual and when causing short circuit, two metal connecting lines 5 will conducting, just can detect the short circuit of contact hole whereby.
As shown in Figure 3 and Figure 4, described metal connecting line is a prong like, and with the through hole or the same strip metal line 5 of contact hole 4 connections of delegation, the through hole of adjacent lines or contact hole connect different metal connecting lines respectively, and through hole 8 is drawn metal connecting line 5, to detect.Described prong like can be set to the Y direction, as shown in Figure 3, also can be set to directions X, as shown in Figure 4.
As shown in Figure 5, described metal connecting line can also be helical structure, and described through hole or contact hole 4 all are connected with a strip metal line 5 wherein, and through hole 8 is drawn metal connecting line 5.
With Fig. 3 or structure shown in Figure 4 is example, in final electrical characteristics test, monitor the leakage current of prong like, leakage current is greater than 1nA, and the design rule short-circuit structure that this layer metal connecting line short-circuit structure and metal connecting line 90% dwindles is normal, then can be judged to be this layer through hole or contact hole and have short circuit, it is residual to have tungsten.
In sum, the present invention is by said structure, can detect the through hole that causes owing to a variety of causes or the short circuit of contact hole easily, thereby can in time adjust the qualification rate of assurance product to technology.
Claims (4)
1. through hole or contact hole structure for detecting short circuit in the semiconductor devices, it is characterized in that, two groups of adjacent metal lines are set on the metal level on be provided with the interlayer film of regularly arranged through hole or contact hole, described two groups of metal connecting line not conductings mutually under normal condition, described two groups of metal connecting lines are drawn by its through hole separately.
2. through hole or contact hole structure for detecting short circuit is characterized in that in the semiconductor devices according to claim 1, and through hole or contact hole structure for detecting short circuit are arranged in the scribe line of chip in described this semiconductor devices.
3. through hole or contact hole structure for detecting short circuit in the semiconductor devices according to claim 1, it is characterized in that, described metal connecting line is a prong like, connects same strip metal line with the through hole or the contact hole of delegation, and the through hole of adjacent lines or contact hole connect different metal connecting lines respectively.
4. through hole or contact hole structure for detecting short circuit is characterized in that in the semiconductor devices according to claim 1, and described metal connecting line is a helical structure, and described through hole or contact hole all are connected with a strip metal line wherein.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008100441225A CN101750563B (en) | 2008-12-17 | 2008-12-17 | Structure for detecting short circuit of through holes or contact holes in semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008100441225A CN101750563B (en) | 2008-12-17 | 2008-12-17 | Structure for detecting short circuit of through holes or contact holes in semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101750563A true CN101750563A (en) | 2010-06-23 |
| CN101750563B CN101750563B (en) | 2012-02-15 |
Family
ID=42477840
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008100441225A Active CN101750563B (en) | 2008-12-17 | 2008-12-17 | Structure for detecting short circuit of through holes or contact holes in semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101750563B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102723322A (en) * | 2011-03-30 | 2012-10-10 | 上海华虹Nec电子有限公司 | Testing structure for monitoring communication between emitter and base due to contact hole in germanium-silicon process |
| CN103187399A (en) * | 2011-12-31 | 2013-07-03 | 中芯国际集成电路制造(上海)有限公司 | Through-silicon via (TSV) testing structure and TSV testing method |
| CN103779327A (en) * | 2012-10-18 | 2014-05-07 | 中芯国际集成电路制造(上海)有限公司 | IMD measurement circuit structure and IMD performance test method |
| CN103811410A (en) * | 2012-11-12 | 2014-05-21 | 上海华虹宏力半导体制造有限公司 | Method for finding weak connection of through holes |
-
2008
- 2008-12-17 CN CN2008100441225A patent/CN101750563B/en active Active
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102723322A (en) * | 2011-03-30 | 2012-10-10 | 上海华虹Nec电子有限公司 | Testing structure for monitoring communication between emitter and base due to contact hole in germanium-silicon process |
| CN102723322B (en) * | 2011-03-30 | 2014-07-09 | 上海华虹宏力半导体制造有限公司 | Testing structure for monitoring communication between emitter and base due to contact hole in germanium-silicon process |
| CN103187399A (en) * | 2011-12-31 | 2013-07-03 | 中芯国际集成电路制造(上海)有限公司 | Through-silicon via (TSV) testing structure and TSV testing method |
| CN103187399B (en) * | 2011-12-31 | 2015-07-08 | 中芯国际集成电路制造(上海)有限公司 | Through-silicon via (TSV) testing structure and TSV testing method |
| CN103779327A (en) * | 2012-10-18 | 2014-05-07 | 中芯国际集成电路制造(上海)有限公司 | IMD measurement circuit structure and IMD performance test method |
| CN103779327B (en) * | 2012-10-18 | 2017-03-15 | 中芯国际集成电路制造(上海)有限公司 | IMD measuring circuits structure and IMD performance test methods |
| CN103811410A (en) * | 2012-11-12 | 2014-05-21 | 上海华虹宏力半导体制造有限公司 | Method for finding weak connection of through holes |
| CN103811410B (en) * | 2012-11-12 | 2016-10-19 | 上海华虹宏力半导体制造有限公司 | The method finding through hole Weak link |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101750563B (en) | 2012-02-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9557376B2 (en) | Apparatuses and methods for die seal crack detection | |
| US8159254B2 (en) | Crack sensors for semiconductor devices | |
| CN100547769C (en) | Semiconductor structure and semiconductor chip | |
| CN101750563B (en) | Structure for detecting short circuit of through holes or contact holes in semiconductor device | |
| KR102576210B1 (en) | Semiconductor device | |
| CN102177582A (en) | Circuit for the parallel supplying of power during testing of a plurality of electronic devices integrated on a semiconductor wafer | |
| CN103163442A (en) | Wafer test method | |
| US20100276816A1 (en) | Separate probe and bond regions of an integrated circuit | |
| JP2017142252A (en) | Semiconductor chip with fracture detection | |
| KR20080061033A (en) | Teg pattern and method for testing semiconductor device using the same | |
| US20150008431A1 (en) | Method and layout for detecting die cracks | |
| CN206312895U (en) | A kind of receivable test structure of wafer | |
| CN103811467A (en) | Electromigration test structure and method | |
| CN206076226U (en) | The WAT test structures of alignment skew in monitoring AR techniques | |
| CN102097393B (en) | Semiconductor device | |
| JP5582209B1 (en) | Semiconductor device manufacturing method and inspection method | |
| CN203826374U (en) | Test structure | |
| JP5370250B2 (en) | Manufacturing method of semiconductor device | |
| CN103367323B (en) | Detect domain structure and detection method | |
| US7589546B2 (en) | Inspection apparatus and method for semiconductor IC | |
| CN109920756A (en) | Chip sealing ring and forming method thereof | |
| CN203895444U (en) | Contact hole bridging test structure | |
| US9691671B2 (en) | Test key array | |
| US20240133944A1 (en) | Semiconductor device and inspection method for semiconductor device | |
| TWI516772B (en) | Printed circuit board of probing card |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140108 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20140108 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |