CN101748373B - 高热稳定性和低电阻率C掺杂Cu薄膜的制备方法 - Google Patents
高热稳定性和低电阻率C掺杂Cu薄膜的制备方法 Download PDFInfo
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- CN101748373B CN101748373B CN2009103123267A CN200910312326A CN101748373B CN 101748373 B CN101748373 B CN 101748373B CN 2009103123267 A CN2009103123267 A CN 2009103123267A CN 200910312326 A CN200910312326 A CN 200910312326A CN 101748373 B CN101748373 B CN 101748373B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 17
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 14
- 238000002156 mixing Methods 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 238000004544 sputter deposition Methods 0.000 claims abstract description 10
- 229910052786 argon Inorganic materials 0.000 claims abstract description 7
- 239000007789 gas Substances 0.000 claims abstract description 4
- 239000011159 matrix material Substances 0.000 claims description 14
- 239000007787 solid Substances 0.000 claims description 13
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 8
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- 238000004138 cluster model Methods 0.000 claims description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 238000013461 design Methods 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 239000005300 metallic glass Substances 0.000 claims description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 3
- 239000013077 target material Substances 0.000 claims description 3
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 238000012545 processing Methods 0.000 claims description 2
- 238000012546 transfer Methods 0.000 claims description 2
- 238000000137 annealing Methods 0.000 abstract description 42
- 238000009792 diffusion process Methods 0.000 abstract description 24
- 238000002161 passivation Methods 0.000 abstract description 9
- 229910052802 copper Inorganic materials 0.000 abstract description 7
- 229910052710 silicon Inorganic materials 0.000 abstract description 4
- 239000006104 solid solution Substances 0.000 abstract description 2
- 238000004140 cleaning Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000010587 phase diagram Methods 0.000 abstract 1
- 238000005086 pumping Methods 0.000 abstract 1
- 239000010949 copper Substances 0.000 description 91
- 239000000523 sample Substances 0.000 description 12
- 230000000694 effects Effects 0.000 description 11
- 125000004429 atom Chemical group 0.000 description 9
- 230000004888 barrier function Effects 0.000 description 9
- 239000013078 crystal Substances 0.000 description 8
- 238000004458 analytical method Methods 0.000 description 7
- 238000011160 research Methods 0.000 description 7
- 229910000881 Cu alloy Inorganic materials 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910017758 Cu-Si Inorganic materials 0.000 description 4
- 229910017931 Cu—Si Inorganic materials 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- WCCJDBZJUYKDBF-UHFFFAOYSA-N copper silicon Chemical compound [Si].[Cu] WCCJDBZJUYKDBF-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 230000001934 delay Effects 0.000 description 2
- 230000003111 delayed effect Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 229910001385 heavy metal Inorganic materials 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000011056 performance test Methods 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910000808 amorphous metal alloy Inorganic materials 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012821 model calculation Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000010183 spectrum analysis Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
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CN2009103123267A CN101748373B (zh) | 2009-12-26 | 2009-12-26 | 高热稳定性和低电阻率C掺杂Cu薄膜的制备方法 |
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CN2009103123267A CN101748373B (zh) | 2009-12-26 | 2009-12-26 | 高热稳定性和低电阻率C掺杂Cu薄膜的制备方法 |
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CN101748373A CN101748373A (zh) | 2010-06-23 |
CN101748373B true CN101748373B (zh) | 2011-03-16 |
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Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2012048460A1 (zh) * | 2010-10-13 | 2012-04-19 | 大连理工大学 | 低电阻率高热稳定性的Cu-Ni-Mo合金薄膜及其制备工艺 |
CN102808150A (zh) * | 2012-09-12 | 2012-12-05 | 大连理工大学 | 具有低电阻率和高化学惰性的Cu-Ni-Nb三元合金薄膜及其制备工艺 |
CN102851645A (zh) * | 2012-10-11 | 2013-01-02 | 电子科技大学 | 一种低残余应力的铜薄膜制备方法 |
CN103811319B (zh) * | 2012-11-08 | 2018-06-08 | 中芯国际集成电路制造(上海)有限公司 | 一种形成高k金属栅极的方法 |
CN103014627B (zh) * | 2013-01-17 | 2014-10-22 | 大连理工大学 | 一种可调制带隙宽度的Fe-Si-Al系三元非晶薄膜及其制备方法 |
CN109461714A (zh) * | 2018-11-15 | 2019-03-12 | 江苏科技大学 | 一种合金化铜Cu(Ni)无扩散阻挡层互连结构及其制备方法 |
CN112011779B (zh) * | 2019-05-30 | 2022-09-23 | 兰州空间技术物理研究所 | 一种真空磁控溅射卷绕镀制低残余应力厚铜膜的方法 |
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