CN101740729B - Preparation method of white-light organic electroluminescence device - Google Patents
Preparation method of white-light organic electroluminescence device Download PDFInfo
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Abstract
The invention discloses a preparation method of a white-light organic electroluminescence device, comprising the following steps of: (1) preparing a zinc sulfide thin film with the thickness of 0.1-30nm on a clean conductive substrate by adopting a magnetron sputtering method; (2) preparing an NPB hole transporting layer on the zinc sulfide thin film; (3) preparing a luminescence layer on the NPB hole transporting layer by adopting a vacuum evaporating method; (3) preparing an electronic transporting layer on the luminescence layer; (5) preparing an LiF/Al mixed cathode on the electronic transporting layer; and (6) carrying out whole encapsulation on the LiF/Al mixed cathode by adopting an encapsulated substrate to finish the preparation of the device. The white-light organic electroluminescence device has the advantages of simple process, easy control, low manufacturing cost, high brightness and luminescence efficiency and long service life.
Description
Technical field:
The invention belongs to flat panel display/lighting technical field, relate to a kind of preparation method of white light organic electroluminescent device.
Background technology:
Organic electroluminescence device is meant that under electric field driven electronics, hole are injected in the device by negative electrode, the anode of device respectively, and electronics, hole are in the luminescent layer of device or meet compound through luminous mode emittance at the interface.The present main application fields of organic electroluminescence device is flat panel display field and flat illumination field.
For manufacturing process, the manufacturing cost that reduces organic electroluminescence device of simplifying organic electroluminescence device, the yields that improves organic electroluminescence device, the technology that adopts white light to variegate filter coating at present realizes that full color ORGANIC ELECTROLUMINESCENCE DISPLAYS (being called for short OLED) becomes one of important technology direction of current OLED display device research.White light organic electroluminescent device is the key that this technology prepares full color OLED display device, and technical indicators such as the brightness of white light organic electroluminescent device, luminous efficiency, colorimetric purity, life-span directly influence the quality of full color OLED display device.In addition, the white light organic electroluminescent device that has an excellent planar photocurrent versus light intensity has received great attention both domestic and external.Thus, to have high brightness, high-luminous-efficiency, long-life white light organic electroluminescent device be present primary study content in preparation.
Summary of the invention:
The present invention proposes a kind of preparation method of white light organic electroluminescent device, adopts the white light organic electroluminescent device of this method preparation to can be used to prepare full-color flat-panel display device of white light+color filter film (CF) type OLED or flat illumination light source.The preparation method of white light organic electroluminescent device of the present invention is,
(1) adopting the method for magnetron sputtering on the electrically-conductive backing plate of cleaning, to prepare thickness is the zinc sulfide film of 0.1-30nm;
(2) the method vapor deposition NPB of employing vacuum evaporation on zinc sulfide film, preparation NPB hole transmission layer, the NPB deposition rate is 0.1-1.5nm/s, the NPB thickness of hole transport layer is 10-50nm; Said NPB is N, N '-two (1-naphthyl)-N, N '-diphenyl-1,1 '-diphenyl-4,4 '-diamines;
(3) method vapor deposition NPB, rubrene and oxine aluminium on the NPB hole transmission layer of employing vacuum evaporation; Preparation thickness is the luminescent layer of 3-15nm; Wherein to account for the quality percentage composition of NPB be 0.5-1.5% to rubrene, and the quality percentage composition that oxine aluminium accounts for NPB is 0.5-1.5%;
(4) the sub-transport layer of method vapor deposition oxine aluminum power backup of employing vacuum evaporation on luminescent layer, the deposition rate of oxine aluminium is 0.1-1.5nm/s, the electric transmission layer thickness is 5-20nm;
(5) on electron transfer layer, adopt the method vapor deposition cathode material LiF and the Al of vacuum evaporation, preparation LiF/Al mixed cathode; The deposition rate of said cathode material is 0.1-10.0nm/s, and the thickness of cathode material LiF is 0.1-5nm, and the thickness of cathode material Al is 50-300nm;
(6) adopt base plate for packaging that the LiF/Al mixed cathode is carried out overall package, accomplish the device preparation.
Zinc sulfide film thickness is 0.1nm, 0.5nm, 1.5nm, 10nm, 15nm, 20nm or 30nm in the said step (1).The NPB deposition rate is 0.1nm/s, 0.5nm/s, 1.0nm/s or 1.5nm/s in the said step (2), and the NPB thickness of hole transport layer is 10nm, 20nm, 30nm, 40nm or 50nm.
Adopt the white light organic electroluminescent device of the present invention's preparation to have simple, the easy control of technology, low cost of manufacture, brightness height and luminous efficiency are high, feature of long life.
Embodiment:
Embodiment 1
A kind of preparation method of white light organic electroluminescent device,
(1) adopting the method for magnetron sputtering on the electrically-conductive backing plate of cleaning, to prepare thickness is the zinc sulfide film of 0.1nm;
(2) the method vapor deposition NPB of employing vacuum evaporation on zinc sulfide film, preparation NPB hole transmission layer, the NPB deposition rate is 1.5nm/s, the NPB thickness of hole transport layer is 10-50nm; Said NPB is N, N '-two (1-naphthyl)-N, N '-diphenyl-1,1 '-diphenyl-4,4 '-diamines;
(3) method vapor deposition NPB, rubrene and oxine aluminium on the NPB hole transmission layer of employing vacuum evaporation; The preparation luminescent layer; Thickness is 3nm, and wherein to account for the quality percentage composition of NPB be 0.5% to rubrene, and the quality percentage composition that oxine aluminium accounts for NPB is 0.5%;
(4) the sub-transport layer of method vapor deposition oxine aluminum power backup of employing vacuum evaporation on luminescent layer, the deposition rate of oxine aluminium is 0.1nm/s, the electric transmission layer thickness is 5nm;
(5) on electron transfer layer, adopt the method vapor deposition cathode material LiF and the Al of vacuum evaporation, preparation LiF/Al mixed cathode; The deposition rate of said cathode material is 0.1nm/s, and the thickness of cathode material LiF is 0.1nm, and the thickness of cathode material Al is 50nm;
(6) adopt base plate for packaging that the LiF/Al mixed cathode is carried out overall package, accomplish the device preparation.
Embodiment 2
A kind of preparation method of white light organic electroluminescent device,
(1) adopting the method for magnetron sputtering on the electrically-conductive backing plate of cleaning, to prepare thickness is the zinc sulfide film of 30nm;
(2) the method vapor deposition NPB of employing vacuum evaporation on zinc sulfide film, preparation NPB hole transmission layer, the NPB deposition rate is 1.5nm/s, the NPB thickness of hole transport layer is 50nm; Said NPB is N, N '-two (1-naphthyl)-N, N '-diphenyl-1,1 '-diphenyl-4,4 '-diamines;
(3) method vapor deposition NPB, rubrene and oxine aluminium on the NPB hole transmission layer of employing vacuum evaporation; The preparation luminescent layer; Thickness is 15nm, and wherein to account for the quality percentage composition of NPB be 0.5-1.5% to rubrene, and the quality percentage composition that oxine aluminium accounts for NPB is 1.5%;
(4) the sub-transport layer of method vapor deposition oxine aluminum power backup of employing vacuum evaporation on luminescent layer, the deposition rate of oxine aluminium is 1.5nm/s, the electric transmission layer thickness is 20nm;
(5) on electron transfer layer, adopt the method vapor deposition cathode material LiF and the Al of vacuum evaporation, preparation LiF/Al mixed cathode; The deposition rate of said cathode material is 10.0nm/s, and the thickness of cathode material LiF is 5nm, and the thickness of cathode material Al is 300nm;
(6) adopt base plate for packaging that the LiF/Al mixed cathode is carried out overall package, accomplish the device preparation.
Embodiment 3
A kind of preparation method of white light organic electroluminescent device,
(1) adopting the method for magnetron sputtering on the electrically-conductive backing plate of cleaning, to prepare thickness is the zinc sulfide film of 10nm;
(2) the method vapor deposition NPB of employing vacuum evaporation on zinc sulfide film, preparation NPB hole transmission layer, the NPB deposition rate is 1nm/s, the NPB thickness of hole transport layer is 20nm; Said NPB is N, N '-two (1-naphthyl)-N, N '-diphenyl-1,1 '-diphenyl-4,4 '-diamines;
(3) method vapor deposition NPB, rubrene and oxine aluminium on the NPB hole transmission layer of employing vacuum evaporation; The preparation luminescent layer; Thickness is 10nm, and wherein to account for the quality percentage composition of NPB be 0.5-1.5% to rubrene, and the quality percentage composition that oxine aluminium accounts for NPB is 1%;
(4) the sub-transport layer of method vapor deposition oxine aluminum power backup of employing vacuum evaporation on luminescent layer, the deposition rate of oxine aluminium is 1nm/s, the electric transmission layer thickness is 15nm;
(5) on electron transfer layer, adopt the method vapor deposition cathode material LiF and the Al of vacuum evaporation, preparation LiF/Al mixed cathode; The deposition rate of said cathode material is 5nm/s, and the thickness of cathode material LiF is 2.5nm, and the thickness of cathode material Al is 100nm;
(6) adopt base plate for packaging that the LiF/A1 mixed cathode is carried out overall package, accomplish the device preparation.
Above content is to combine concrete preferred implementation to further explain that the present invention did; Can not assert that embodiment of the present invention only limits to this; Those of ordinary skill for technical field under the present invention; Under the prerequisite that does not break away from the present invention's design, can also make some simple deduction or replace, all should be regarded as belonging to the present invention and confirm scope of patent protection by claims of being submitted to.
Claims (3)
1. the preparation method of a white light organic electroluminescent device is characterized in that:
(1) adopting the method for magnetron sputtering on the electrically-conductive backing plate of cleaning, to prepare thickness is the zinc sulfide film of 0.1-30nm;
(2) the method vapor deposition NPB of employing vacuum evaporation on zinc sulfide film, preparation NPB hole transmission layer, the NPB deposition rate is 0.1-1.5n m/s, the NPB thickness of hole transport layer is 10-50nm; Said NPB is N, N '-two (1-naphthyl)-N, N '-diphenyl-1,1 '-diphenyl-4,4 '-diamines;
(3) method vapor deposition NPB, rubrene and oxine aluminium on the NPB hole transmission layer of employing vacuum evaporation; Be prepared into the luminescent layer that thickness is 3-15nm; Wherein to account for the quality percentage composition of NPB be 0.5-1.5% to rubrene, and the quality percentage composition that oxine aluminium accounts for NPB is 0.5-1.5%;
(4) the sub-transport layer of method vapor deposition oxine aluminum power backup of employing vacuum evaporation on luminescent layer, the deposition rate of oxine aluminium is 0.1-1.5n m/s, the electric transmission layer thickness is 5-20nm;
(5) on electron transfer layer, adopt the method vapor deposition cathode material LiF and the Al of vacuum evaporation, preparation LiF/Al mixed cathode; The deposition rate of said cathode material is 0.1-10.0 nm/s, and the thickness of cathode material LiF is 0.1-5nm, and the thickness of cathode material Al is 50-300nm;
(6) adopt base plate for packaging that the LiF/Al mixed cathode is carried out overall package, accomplish the device preparation.
2. a kind of preparation method of white light organic electroluminescent device according to claim 1, it is characterized in that: zinc sulfide film thickness is 0.1nm, 0.5nm, 1.5nm, 10nm, 15nm, 20nm or 30nm in the said step (1).
3. a kind of preparation method of white light organic electroluminescent device according to claim 1; It is characterized in that: the NPB deposition rate is 0.1nm/s, 0.5nm/s, 1.0nm/s or 1.5nm/s in the said step (2), and the NPB thickness of hole transport layer is 10nm, 20nm, 30nm, 40nm or 50nm.
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CN108183177A (en) * | 2013-09-29 | 2018-06-19 | 安溪县景宏技术咨询有限公司 | A kind of green phosphorescent OLED organic electroluminescence devices and preparation method thereof |
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CN101931059B (en) * | 2010-07-27 | 2012-09-05 | 北京大学 | Double electrode, OLED device based on same and manufacturing method |
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CN101030624A (en) * | 2007-02-02 | 2007-09-05 | 东南大学 | Organic electroluminescent device with hybrid illuminating layer |
CN101217837A (en) * | 2007-12-26 | 2008-07-09 | 陕西科技大学 | A packaging method of organic electroluminescent display |
CN101436648A (en) * | 2008-12-09 | 2009-05-20 | 彩虹集团公司 | Encapsulation method for novel organic electroluminescence device film |
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CN101030624A (en) * | 2007-02-02 | 2007-09-05 | 东南大学 | Organic electroluminescent device with hybrid illuminating layer |
CN101217837A (en) * | 2007-12-26 | 2008-07-09 | 陕西科技大学 | A packaging method of organic electroluminescent display |
CN101436648A (en) * | 2008-12-09 | 2009-05-20 | 彩虹集团公司 | Encapsulation method for novel organic electroluminescence device film |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108183177A (en) * | 2013-09-29 | 2018-06-19 | 安溪县景宏技术咨询有限公司 | A kind of green phosphorescent OLED organic electroluminescence devices and preparation method thereof |
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