CN101436648A - Encapsulation method for novel organic electroluminescence device film - Google Patents
Encapsulation method for novel organic electroluminescence device film Download PDFInfo
- Publication number
- CN101436648A CN101436648A CNA200810232739XA CN200810232739A CN101436648A CN 101436648 A CN101436648 A CN 101436648A CN A200810232739X A CNA200810232739X A CN A200810232739XA CN 200810232739 A CN200810232739 A CN 200810232739A CN 101436648 A CN101436648 A CN 101436648A
- Authority
- CN
- China
- Prior art keywords
- layer
- film
- encapsulation
- vacuum evaporation
- ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
The invention relates to packaging technology in a flat panel display device, in particular to a method for packaging a novel organic electroluminescent device film, which is characterized by comprising the following steps: a, preparing a silicon nitride film barrier layer with the thickness of between 400 and 600 nanometers by a method of vacuum evaporation or magnetron sputtering; b, depositing a layer of polymethyl methacrylate film or polyimide film with the thickness of between 800 and 1,200 nanometers by a method of printing, coating or spray ink printing, and performing vacuum drying at a temperature of between 40 and 65 DEG C for 10 to 60 minutes to form a polymer film packaging layer; and c, performing surface modification treatment on the polymer film packaging layer by using N ions or Ar ions. The invention discloses packaging technology for a novel OEL device film, and the technology has remarkable effect on improving the service life of a flexible OLED/PLED display device.
Description
Technical field
The present invention relates to the encapsulation technology in the panel display apparatus, especially a kind of encapsulation method for novel organic electroluminescence device film.
Background technology
Display Technique is through years of development, present the situation of various Display coexistence, from the generally acknowledged first generation display device CRT (cathode ray tube of industry, be commonly called as picture tube) to competition miserable second generation display device LCD, PDP, until the third generation display device OEL, the FED that heat up gradually, be unusually brilliant, each show his special prowess.In numerous Display Techniques, OEL (display of organic electroluminescence, comprise OLED and PLED) be a kind of flat panel display that has prospect, the OEL device compares with other display device that the advantage that has is embodied in that operating voltage is low, cost of manufacture is low, energy consumption is little, thinner, contrast and definition advantages of higher more.OEL has obtained huge progress in the time of more than ten years in the past, and each big display producer drops into research and development one after another.
But the OEL technical development be we can say also very unripe so far, and its display device remains in some shortcomings, and the most outstanding defective is that its useful life is shorter at present, and the life problems of device has limited the process of OEL device industrialization to a great extent.The life-span of OEL device is depended on the performance and the life-span of selected organic material on the one hand, also depends on the method for packing and the effect of device on the other hand.Because the instability of organic material, if the OEL device package is bad, organic material will react with gases such as water vapour in the vacuum chamber, oxygen, is easy to cause the inefficacy of organic material functional layer and the decreased performance of electrode, thereby causes the reduction in entire device life-span.Thereby it is the hot fields of studying both at home and abroad at present that the device aging of OEL display device in the long-term work process and inefficacy are effectively suppressed.For making the OEL device, particularly flexible OEL display device can reach enough+useful life by steady operation, the most key exactly device effectively being encapsulated at present, and this encapsulating material to device, method and technology have proposed high requirement.
Summary of the invention
The purpose of this invention is to provide a kind of encapsulation method for novel organic electroluminescence device film; the encapsulating material cheapness that this method adopts; preparation technology is simple; easy large-area preparation; can reduce the erosion of outside water, oxygen isoreactivity material effectively to the OEL device; thereby device organic functional material and electrode are formed effective protection, can significantly improve the life-span of OEL device.
For achieving the above object, the technical solution used in the present invention is:
A kind of encapsulation method for novel organic electroluminescence device film, its special feature is, comprises the steps:
A, at the conducting glass substrate of cleaning or the ito anode figure of preparation OEL device on organic PET film substrate of conducting electricity;
The method of b, the method that adopts vacuum evaporation or solution coating forms hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer successively on substrate;
The method of c, employing vacuum evaporation or magnetron sputtering prepares resilient coating and device metal cathode pattern on above-mentioned organic function layer;
The method of d, employing vacuum evaporation or magnetron sputtering prepares the silicon nitride film barrier layer that a layer thickness is 400-600nm on metallic cathode;
The method of e, employing printing, coating or inkjet printing deposits polymethyl methacrylate film or the polyimide film that a layer thickness is 800-1200nm at silicon nitride film, forms the one layer of polymeric thin-film encapsulation layer in 10-60 minutes 40-65 ℃ of following vacuumizes;
F, the method that adopts low energy ion to inject are carried out surface modification treatment with N ion or Ar ion pair polymerization thing thin-film encapsulation layer, form level and smooth, fine and close thin polymer film encapsulated layer, and the ion energy scope of injection is 2～20keV, and the implantation dosage scope is 1.0 * 10
12～3.0 * 10
19Ions/cm
2
Thereby form multilayer encapsulation function layer and reach good packaging effect thereby repeat at least 2 step d, e and f.
Wherein adopt metacoxal plate that device is carried out overall package according to designs or application need.
The present invention proposes a kind of thin-film package technology of New O El element, be intended to solve the shortcoming of the existing encapsulation technology of OEL device, thus the development that promotes its industrialization useful life that improves the OEL device effectively.The OEL device thin-film package technology that proposes among the present invention is applicable to the OLED/PLED display device of glass base preparation and is the flexible OLED/PLED display device of base preparation with plastic film or metal that this technology improves the life-span of flexible OLED/PLED display device especially significant effect.
Embodiment
Embodiment 1
1, goes up the ito anode figure of preparation OEL device at the conducting glass substrate of cleaning (or conduct electricity organic PET film substrate).
2, adopt the method for vacuum evaporation or the method for solution coating on substrate, to form hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer successively.
3, adopt the method for vacuum evaporation or magnetron sputtering on above-mentioned organic function layer, to prepare resilient coating and device metal cathode pattern.
4, adopt the method for vacuum evaporation or magnetron sputtering on metallic cathode, to prepare the silicon nitride film barrier layer that a layer thickness is 400nm.
5, adopt the method for printing or coating or inkjet printing to deposit the polymethyl methacrylate film that a layer thickness is 800nm, formed the one layer of polymeric thin-film encapsulation layer in 60 minutes 40 ℃ of following vacuumizes at silicon nitride film.
6, the method that adopts low energy ion to inject is carried out surface modification treatment with N ion pair polymerization thing thin-film encapsulation layer, forms level and smooth, fine and close thin polymer film encapsulated layer.The ion energy that injects is 2keV, and implantation dosage is 3.0 * 10
19Ions/cm
2
7, repeat 4 layers of encapsulation function layer of-the 6 step of the 4th step 3 formation again, finish the device thin-film package.
Embodiment 2
1, goes up the ito anode figure of preparation OEL device at the conducting glass substrate of cleaning (or conduct electricity organic PET film substrate).
2, adopt the method for vacuum evaporation or the method for solution coating on substrate, to form hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer successively.
3, adopt the method for vacuum evaporation or magnetron sputtering on above-mentioned organic function layer, to prepare resilient coating and device metal cathode pattern.
4, adopt the method for vacuum evaporation or magnetron sputtering on metallic cathode, to prepare the silicon nitride film barrier layer that a layer thickness is 600nm.
5, adopt the method for printing or coating or inkjet printing to deposit the polyimide film that a layer thickness is 1200nm, formed the one layer of polymeric thin-film encapsulation layer in 20 minutes 60 ℃ of following vacuumizes at silicon nitride film.
6, the method that adopts low energy ion to inject is carried out surface modification treatment with Ar ion pair polymerization thing thin-film encapsulation layer, forms level and smooth, fine and close thin polymer film encapsulated layer.The ion energy that injects is 20keV, and implantation dosage is 1.0 * 10
12Ions/cm
2
7, repeat 3 layers of encapsulation function layer of-the 6 step of the 4th step 2 formation again and finish the device thin-film package.
Embodiment 3
1, goes up the ito anode figure of preparation OEL device at the conducting glass substrate of cleaning (or conduct electricity organic PET film substrate).
2, adopt the method for vacuum evaporation or the method for solution coating on substrate, to form hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer successively.
3, adopt the method for vacuum evaporation or magnetron sputtering on above-mentioned organic function layer, to prepare resilient coating and device metal cathode pattern.
4, adopt the method for vacuum evaporation or magnetron sputtering on metallic cathode, to prepare the silicon nitride film barrier layer that a layer thickness is 500nm.
5, adopt the method for printing or coating or inkjet printing to deposit the polymethyl methacrylate film that a layer thickness is 900nm, formed the one layer of polymeric thin-film encapsulation layer in 30 minutes 50 ℃ of following vacuumizes at silicon nitride film.
6, the method that adopts low energy ion to inject is carried out surface modification treatment with Ar ion pair polymerization thing thin-film encapsulation layer, forms level and smooth, fine and close thin polymer film encapsulated layer.The ion energy that injects is 10keV, and the implantation dosage scope is 5.0 * 10
17Ions/cm
2
7, repeat 3 layers of encapsulation function layer of-the 6 step of the 4th step 2 formation again, finish the device thin-film package.
Embodiment 4
1, goes up the ito anode figure of preparation OEL device at the conducting glass substrate of cleaning (or conduct electricity organic PET film substrate).
2, adopt the method for vacuum evaporation or the method for solution coating on substrate, to form hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer successively.
3, adopt the method for vacuum evaporation or magnetron sputtering on above-mentioned organic function layer, to prepare resilient coating and device metal cathode pattern.
4, adopt the method for vacuum evaporation or magnetron sputtering on metallic cathode, to prepare the silicon nitride film barrier layer that a layer thickness is 600nm.
5, adopt the method for printing or coating or inkjet printing to deposit the polymethyl methacrylate film that a layer thickness is 1000nm, formed the one layer of polymeric thin-film encapsulation layer in 15 minutes 60 ℃ of following vacuumizes at silicon nitride film.
6, the method that adopts low energy ion to inject is carried out surface modification treatment with N ion pair polymerization thing thin-film encapsulation layer, forms level and smooth, fine and close thin polymer film encapsulated layer.The ion energy that injects is 15keV, and implantation dosage is 2.0 * 10
18Ions/cm
2
7, repeat 2 layers of encapsulation function layer of-the 6 step of the 4th step 1 formation again, finish the device thin-film package.
Claims (3)
1, a kind of encapsulation method for novel organic electroluminescence device film is characterized in that, comprises the steps:
A, at the conducting glass substrate of cleaning or the ito anode figure of preparation OEL device on organic PET film substrate of conducting electricity;
The method of b, the method that adopts vacuum evaporation or solution coating forms hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer successively on substrate;
The method of c, employing vacuum evaporation or magnetron sputtering prepares resilient coating and device metal cathode pattern on above-mentioned organic function layer;
The method of d, employing vacuum evaporation or magnetron sputtering prepares the silicon nitride film barrier layer that a layer thickness is 400-600nm on metallic cathode;
The method of e, employing printing, coating or inkjet printing deposits polymethyl methacrylate film or the polyimide film that a layer thickness is 800-1200nm at silicon nitride film, forms the one layer of polymeric thin-film encapsulation layer in 10-60 minutes 40-65 ℃ of following vacuumizes;
F, the method that adopts low energy ion to inject are carried out surface modification treatment with N ion or Ar ion pair polymerization thing thin-film encapsulation layer, form level and smooth, fine and close thin polymer film encapsulated layer, and the ion energy scope of injection is 2～20keV, and the implantation dosage scope is 1.0 * 10
12～3.0 * 10
19Ions/cm
2
2, a kind of encapsulation method for novel organic electroluminescence device film as claimed in claim 1 is characterized in that:
Thereby form multilayer encapsulation function layer and reach good packaging effect thereby repeat at least 2 step d, e and f.
3, a kind of encapsulation method for novel organic electroluminescence device film as claimed in claim 1 is characterized in that:
Wherein adopt metacoxal plate that device is carried out overall package according to designs or application need.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810232739XA CN101436648B (en) | 2008-12-09 | 2008-12-09 | Encapsulation method for novel organic electroluminescence device film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810232739XA CN101436648B (en) | 2008-12-09 | 2008-12-09 | Encapsulation method for novel organic electroluminescence device film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101436648A true CN101436648A (en) | 2009-05-20 |
| CN101436648B CN101436648B (en) | 2010-06-16 |
Family
ID=40710967
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200810232739XA Expired - Fee Related CN101436648B (en) | 2008-12-09 | 2008-12-09 | Encapsulation method for novel organic electroluminescence device film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101436648B (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101707237B (en) * | 2009-10-30 | 2011-08-17 | 彩虹集团公司 | Packaging structure and packing method of flexible organic electroluminescent device |
| CN101740729B (en) * | 2009-12-25 | 2012-05-09 | 彩虹集团公司 | Preparation method of white-light organic electroluminescence device |
| CN102760846A (en) * | 2012-07-30 | 2012-10-31 | 信利半导体有限公司 | Flexible organic light emitting diode (OLED) and preparation method thereof |
| CN103094479A (en) * | 2013-02-21 | 2013-05-08 | 吉林大学 | Electrode protecting method in organic electronic device film packaging process |
| CN104124383A (en) * | 2013-04-28 | 2014-10-29 | 海洋王照明科技股份有限公司 | Flexible organic electroluminescent device and preparation method thereof |
| CN105449123A (en) * | 2015-11-18 | 2016-03-30 | 上海大学 | Manufacturing method of water and oxygen barrier layer |
| CN106531904A (en) * | 2016-11-22 | 2017-03-22 | 武汉船舶通信研究所 | OLED display device package and packaging method |
| US10319942B2 (en) | 2015-01-15 | 2019-06-11 | Boe Technology Group Co., Ltd. | OLED device, packaging method thereof, and packaging apparatus |
| CN111048686A (en) * | 2019-11-19 | 2020-04-21 | Tcl华星光电技术有限公司 | Display device and packaging method adopting same |
| CN112242495B (en) * | 2019-07-16 | 2024-03-29 | 北京小米移动软件有限公司 | Film encapsulation layer, display panel and terminal |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001338755A (en) * | 2000-03-21 | 2001-12-07 | Seiko Epson Corp | Organic el element and its manufacturing method |
| JP2004281247A (en) * | 2003-03-17 | 2004-10-07 | Pioneer Electronic Corp | Organic electroluminescent display panel and its manufacturing method |
| CN100499953C (en) * | 2007-12-26 | 2009-06-10 | 陕西科技大学 | A packaging method of organic electroluminescent display |
-
2008
- 2008-12-09 CN CN200810232739XA patent/CN101436648B/en not_active Expired - Fee Related
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101707237B (en) * | 2009-10-30 | 2011-08-17 | 彩虹集团公司 | Packaging structure and packing method of flexible organic electroluminescent device |
| CN101740729B (en) * | 2009-12-25 | 2012-05-09 | 彩虹集团公司 | Preparation method of white-light organic electroluminescence device |
| CN102760846A (en) * | 2012-07-30 | 2012-10-31 | 信利半导体有限公司 | Flexible organic light emitting diode (OLED) and preparation method thereof |
| CN102760846B (en) * | 2012-07-30 | 2016-04-06 | 信利半导体有限公司 | A kind of flexible OLED and preparation method thereof |
| CN103094479A (en) * | 2013-02-21 | 2013-05-08 | 吉林大学 | Electrode protecting method in organic electronic device film packaging process |
| CN103094479B (en) * | 2013-02-21 | 2016-01-20 | 吉林大学 | A kind of method of guard electrode in organic electronic device thin-film package process |
| CN104124383A (en) * | 2013-04-28 | 2014-10-29 | 海洋王照明科技股份有限公司 | Flexible organic electroluminescent device and preparation method thereof |
| US10319942B2 (en) | 2015-01-15 | 2019-06-11 | Boe Technology Group Co., Ltd. | OLED device, packaging method thereof, and packaging apparatus |
| CN105449123A (en) * | 2015-11-18 | 2016-03-30 | 上海大学 | Manufacturing method of water and oxygen barrier layer |
| CN105449123B (en) * | 2015-11-18 | 2018-03-06 | 上海大学 | The preparation method of water oxygen barrier layer |
| CN106531904A (en) * | 2016-11-22 | 2017-03-22 | 武汉船舶通信研究所 | OLED display device package and packaging method |
| CN112242495B (en) * | 2019-07-16 | 2024-03-29 | 北京小米移动软件有限公司 | Film encapsulation layer, display panel and terminal |
| CN111048686A (en) * | 2019-11-19 | 2020-04-21 | Tcl华星光电技术有限公司 | Display device and packaging method adopting same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101436648B (en) | 2010-06-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101436648B (en) | Encapsulation method for novel organic electroluminescence device film | |
| Chen et al. | Effect and mechanism of encapsulation on aging characteristics of quantum-dot light-emitting diodes | |
| Zhang et al. | An ZnMgO: PVP inorganic–organic hybrid electron transport layer: Towards efficient bottom-emission and transparent quantum dot light-emitting diodes | |
| CN105895820B (en) | Organic luminescent device and its display | |
| Xu et al. | Enhanced lifetime of organic light-emitting diodes using soluble tetraalkyl-substituted copper phthalocyanines as anode buffer layers | |
| CN105789467B (en) | A kind of In doping MoO3The preparation method of film and its application in QLED | |
| CN101383401B (en) | Preparation of polymer organic LED | |
| CN1731903A (en) | Method for improving organic electro-luminescence device lifetime | |
| CN108417736A (en) | A kind of preparation method of transition metal oxide as hole injection layer | |
| CN106159108A (en) | A kind of QLED and preparation method thereof | |
| CN106848102A (en) | A kind of flexible display device and preparation method thereof | |
| CN109950412A (en) | One kind being based on ultraviolet blending evaporation process perovskite light emitting diode and preparation method | |
| CN104167497A (en) | Organic light-emitting display device and manufacturing method and display unit thereof | |
| JP2011018922A (en) | Optical device | |
| Yu et al. | An electrochemically deposited film as an interface layer to improve the performance of polymer light-emitting diodes | |
| US10319910B2 (en) | Organic electroluminescent diode and method for manufacturing hole transporting layer thereof | |
| CN103000818B (en) | Top-emitting organic light-emitting device (OLED) and preparation method and application thereof | |
| CN105870350B (en) | Organic luminescent device | |
| Wang et al. | Solution-processed sodium hydroxide as the electron injection layer in inverted bottom-emission organic light-emitting diodes | |
| CN110061143B (en) | Phosphorescent organic light-emitting diode with NP-type composite hole injection layer and preparation method thereof | |
| CN109427978A (en) | A kind of QLED device and preparation method thereof | |
| CN101304075B (en) | Organic LED and manufacture method thereof | |
| Hu et al. | Solution processed alkali-metal and alkaline-earth-metal compounds as the efficient electron injection layer in organic light-emitting diodes | |
| Song et al. | Ether solvent treatment to improve the device performance of the organic light emitting diodes with aluminum cathode | |
| CN102856509A (en) | OLED (organic light emitting diode) encapsulation layer and OLED device and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100616 Termination date: 20141209 |
|
| EXPY | Termination of patent right or utility model |