CN101740663A - 制造太阳能电池的方法 - Google Patents

制造太阳能电池的方法 Download PDF

Info

Publication number
CN101740663A
CN101740663A CN200910223616A CN200910223616A CN101740663A CN 101740663 A CN101740663 A CN 101740663A CN 200910223616 A CN200910223616 A CN 200910223616A CN 200910223616 A CN200910223616 A CN 200910223616A CN 101740663 A CN101740663 A CN 101740663A
Authority
CN
China
Prior art keywords
solar cell
battery
layer
sub
band gap
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN200910223616A
Other languages
English (en)
Inventor
弗雷德·纽曼
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Solaero Solar Power Inc
Original Assignee
Emcore Solar Power Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Emcore Solar Power Inc filed Critical Emcore Solar Power Inc
Publication of CN101740663A publication Critical patent/CN101740663A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H01L31/0465—PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising particular structures for the electrical interconnection of adjacent PV cells in the module
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0687—Multiple junction or tandem solar cells
    • H01L31/06875—Multiple junction or tandem solar cells inverted grown metamorphic [IMM] multiple junction solar cells, e.g. III-V compounds inverted metamorphic multi-junction cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0693—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1852—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising a growth substrate not being an AIIIBV compound
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Sustainable Energy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)

Abstract

本发明提供一种通过以下步骤来制造太阳能电池的方法：提供第一衬底；在第一衬底上沉积形成太阳能电池的半导体材料层序列；安装并接合代用第二衬底，所述代用第二衬底由热膨胀系数大体上类似于所述层序列的顶部上的半导体层的热膨胀系数的材料组成；以及移除所述第一衬底。

Description

制造太阳能电池的方法
技术领域
本发明涉及半导体装置领域，且涉及制造工艺和例如包含变质层的基于III-V半导体化合物的多结太阳能电池的装置。此些装置还被称为倒置变质多结太阳能电池。
背景技术
已主要通过硅半导体技术来提供来自光伏电池(还称作太阳能电池)的太阳能。然而，在过去的若干年中，用于太空应用的III-V化合物半导体多结太阳能电池的大量制造已加速了此技术的发展，不仅供太空中使用，而且还用于陆地太阳能应用。与硅相比，III-V化合物半导体多结装置具有更大的能量转换效率，且通常具有更大的抗辐射性，但III-V化合物半导体多结装置往往制造起来更加复杂。典型的商业III-V化合物半导体多结太阳能电池在1太阳强度、气团0(AMO)照明下具有超过27％的能效，而即便最高效的硅技术一般在相当的条件下仅达到约18％的效率。在较高日光浓度(例如，500X)下，陆地应用(在AMI.5D下)中的市场上可买到的III-V化合物半导体多结太阳能电池具有超过37％的能效。III-V化合物半导体太阳能电池与硅太阳能电池相比较高的转换效率部分是基于通过使用具有不同能带隙能量的多个光伏区并聚集来自所述区中的每一者的电流而实现入射辐射的光谱分裂的能力。
典型的III-V化合物半导体太阳能电池以垂直、多结结构制造在半导体晶片上。接着将个别太阳能电池或晶片安置在水平阵列中，其中所述个别太阳能电池以电串联电路的形式连接在一起。阵列的形状和结构以及其含有的电池的数目部分由所要的输出电压和电流决定。
例如M·W·万拉斯(M.W.Wanlass)等人的“用于高性能的III-V光伏能量转换器的晶格失配方法(Lattice Mismatched Approaches for High Performance，III-V PhotovoltaicEnergy Converters)”(第31届IEEE光伏专家会议会刊(Conference Proceedings ofthe 31stIEEE Photovoltaic Specialists Conference)，2005年1月3日到1月7日，IEEE出版社，2005)中所描述的基于III-V化合物半导体层的倒置变质太阳能电池结构为未来的商业高效率太阳能电池的发展提供了重要的概念性起点。然而，此会议中所提出并描述的用于电池的许多不同层的材料和结构呈现尤其与材料和制造步骤的最适当选择有关的许多实践难题。
发明内容
简要地且大体来说，本发明提供一种通过以下步骤来制造太阳能电池的方法：提供第一衬底；在第一衬底上沉积形成太阳能电池的半导体材料层的序列；安装并接合代用第二衬底，所述代用第二衬底由热膨胀系数大体上类似于所述层序列的顶部上的半导体层的热膨胀系数的材料组成；以及移除所述第一衬底。
附图说明
图1是表示某些二元材料的能带隙和所述二元材料的晶格常数的曲线图；
图2是在生长衬底上沉积半导体层之后本发明的太阳能电池的横截面图；
图3是在下一工艺步骤之后图2的太阳能电池的横截面图；
图4是在下一工艺步骤之后图3的太阳能电池的横截面图；
图5A是在其中附接代用衬底的下一工艺步骤之后图4的太阳能电池的横截面图；
图5B是在其中移除原始衬底的下一工艺步骤之后图5A的太阳能电池的横截面图；
图5C是图5B的太阳能电池的另一横截面图，其中代用衬底位于图的底部；
图6是在下一工艺步骤之后图5C的太阳能电池的简化横截面图；
图7是在下一工艺步骤之后图6的太阳能电池的横截面图；
图8是在下一工艺步骤之后图7的太阳能电池的横截面图；
图9是在下一工艺步骤之后图8的太阳能电池的横截面图；
图10A是其中制造了四个太阳能电池的晶片的俯视平面图；
图10B是其中制造了太阳能电池的晶片的仰视平面图；
图11是在下一工艺步骤之后图9的太阳能电池的横截面图；
图12A是在下一工艺步骤之后图11的太阳能电池的横截面图；
图12B是在下一工艺步骤之后图12A的太阳能电池的横截面图；
图13是图12B的晶片的俯视平面图，其描绘在下一工艺步骤之后，蚀刻在电池周围的沟槽的表面视图；
图14是在本发明的第一实施例中的下一工艺步骤之后图12B的太阳能电池的横截面图；
图15是在本发明的第二实施例中的下一工艺步骤之后图12B的太阳能电池的横截面图；
图16是根据本发明的变质太阳能电池中的基极层中的掺杂分布的曲线图；以及
图17是描绘根据本发明的倒置变质多结太阳能电池的电流和电压特性的曲线图。
具体实施方式
现在将描述本发明的细节，包含本发明的示范性方面和实施例。参看图式和以下描述，相同的参考编号用于识别相同或功能类似的元件，且意在以高度简化的图解方式说明示范性实施例的主要特征。另外，所述图式无意描绘实际实施例的每个特征或所描绘元件的相对尺寸，且所述图式未按比例绘制。
制造倒置变质多结(IMM)太阳能电池的基本概念是以“相反”序列在衬底上生长太阳能电池的子电池。即，正常将为面向太阳辐射的“顶部”子电池的高能带隙子电池(即，具有在1.8eV到2.1eV的范围内的能带隙的子电池)以外延方式生长在半导体生长衬底(例如，GaAs或Ge)上，且因此此些子电池与此衬底晶格匹配。一个或一个以上较低能带隙中间子电池(即，具有在1.2eV到1.8eV的范围内的能带隙)接着可生长在所述高能带隙子电池上。
至少一个下部子电池形成于中间子电池上，使得所述至少一个下部子电池相对于所述生长衬底大体上晶格失配，且使得所述至少一个下部子电池具有第三较低能带隙(即，在0.7eV到1.2eV的范围内的能带隙)。代用衬底或支撑结构接着附着在或提供在“底部”或大体上晶格失配的下部子电池上，且随后移除生长半导体衬底。(所述生长衬底随后可再用于第二和后续太阳能电池的生长)。
上文所述的相关申请案中揭示倒置变质多结太阳能电池的多种不同特征和方面。此些特征中的一些或所有特征可包含于与本发明的太阳能电池相关联的结构和工艺中。
图1是表示某些二元材料的能带隙和所述二元材料的晶格常数的曲线图。三元材料的能带隙和晶格常数位于在典型的相关联二元材料之间绘制的线上(例如三元材料GaAlAs在曲线图上位于GaAs点与AlAs点之间，其中三元材料的能带隙位于GaAs的1.42eV与AlAs的2.16eV之间，视个别成分的相对量而定)。因此，视所要的能带隙而定，可适当地选择三元材料的材料成分以供生长。
优选根据适当的反应堆生长温度和时间的规格且通过使用适当的化学组分和掺杂剂，来控制半导体结构中的层的晶格常数和电性质。气相沉积方法(例如，有机金属气相外延(OMVPE)、金属有机化学气相沉积(MOCVD)、分子束外延(MBE)或用于反向生长的其它气相沉积方法)的使用可使得形成电池的呈单片半导体结构的层能够以所需的厚度、元素组分、掺杂剂浓度以及分级和导电类型而生长。
图2描绘在GaAs生长衬底上循序形成三个子电池A、B和C之后，根据本发明的多结太阳能电池。更明确地说，展示衬底101，其优选为砷化镓(GaAs)，但也可为锗(Ge)或其它合适材料。对于GaAs，所述衬底优选是15°切下衬底，也就是说，其表面远离(100)平面朝(111)A平面定位成15°，如2008年3月13日申请的第12/047,944号美国专利申请案中更全面地描述。
在Ge衬底的情况下，成核层(未图示)直接沉积在衬底101上。缓冲层102和蚀刻终止层103进一步沉积在所述衬底上或所述成核层上(在Ge衬底的情况下)。在GaAs衬底的情况下，缓冲层102优选为GaAs。在Ge衬底的情况下，缓冲层102优选为InGaAs。为GaAs的接触层104接着沉积在层103上，且为AlInP的窗口层105沉积在接触层上。由n+发射极层106和p型基极层107组成的子电池A接着以外延方式沉积在窗口层105上。子电池A一般与生长衬底101晶格匹配。
应注意，多结太阳能电池结构可由周期表中所列举的第III族到第V族元素的符合晶格常数和能带隙要求的任何合适组合形成，其中第III族包含硼(B)、铝(Al)、镓(Ga)、铟(In)和铊(T)。第IV族包含碳(C)、硅(Si)、锗(Ge)和锡(Sn)。第V族包含氮(N)、磷(P)、砷(As)、锑(Sb)和铋(Bi)。
在优选实施例中，发射极层106由InGa(Al)P组成，且基极层107由InGa(Al)P组成。前面化学式中的括号中的铝或Al项意味着Al是任选的成分，且在此例子中，可以在0％到30％的范围内的量使用。将结合图16来论述根据本发明的发射极层106和基极层107的掺杂分布。
在完成下文将描述的根据本发明的工艺步骤之后，子电池A将最终变为倒置变质结构的“顶部”子电池。
在基极层107的顶部上，沉积优选p+Al GalnP的背面场(“BSF”)层108，且用于减少重组损失。
BSF层108驱动来自基极/BSF界面表面附近的区的少数载流子，以使重组损耗的影响减到最小。换句话说，BSF层18减少太阳能子电池A的背侧处的重组损耗，且进而减少基极中的重组。
在BSF层108的顶部沉积经重掺杂的p型层109a和n型层109b的序列，其形成隧道二极管，即，将子电池A连接到子电池B的欧姆电路元件。层109a优选由p++AlGaAs组成，且层109b优选由n++InGaP组成。
在隧道二极管层109的顶部沉积窗口层110，其优选为n+InGaP。将InGaP用作窗口层110的材料成分的优点在于其具有紧密匹配邻近的发射极层111的折射率，如2008年10月24日申请的第12/258,190号美国专利申请案中更全面地描述。更一般地说，子电池B中所使用的窗口层110还操作以减少界面重组损耗。所属领域的技术人员应明白，在不脱离本发明的范围的情况下，可在电池结构中添加或删除额外的层。
在窗口层110的顶部沉积子电池B的层：n型发射极层III和p型基极层112。这些层优选分别由InGaP和In0.015GaAs(针对Ge衬底或生长模板)组成，或分别由InGaP和GaAs(针对GaAs衬底)组成，但也可使用与晶格常数和能带隙要求一致的任何其它合适的材料。因此，子电池B可由GaAs、GaInP、GaInAs、GaAsSb或GaInAsN发射极区和GaAs、GaInAs、GaAsSb或GaInAsN基极区组成。将结合图16来论述根据本发明的层111和112的掺杂分布。
在先前所揭示的倒置变质太阳能电池的实施方案中，中间电池是同质结构。在本发明中，类似于第12/023,772号美国专利申请案中所揭示的结构，中间子电池变为异质结构，其中InGaP发射极及其窗口从InAlP转换为InGaP。此修改消除了中间子电池的窗口/发射极界面处的折射率不连续性。另外，窗口层110被掺杂的程度优选是发射极111被掺杂的程度的三倍，以将费米能级提升到更接近传导能带，且因此在窗口/发射极界面处产生能带弯曲，其导致将少数载流子约束到发射极层。
在本发明的优选实施例中，中间子电池发射极具有等于顶部子电池发射极的能带隙，且底部子电池发射极具有比中间子电池的基极的能带隙大的能带隙。因此，在制造太阳能电池并实施和操作后，中间子电池B或底部子电池C的发射极将均不暴露于可吸收辐射。大体上所有表示可吸收辐射的光子均将被吸收在电池B和C的基极中，所述基极与发射极相比具有较窄的能带隙。因此，使用异质结子电池的优点是：(i)两个子电池的短波长响应将改进，以及(ii)大部分辐射更有效地被吸收，且被收集在较窄能带隙的基极中。所述效应将使Jsc增加。
在电池B的顶部沉积BSF层113，其执行与BSF层109相同的功能。P++/n++隧道二极管层114a和114b分别沉积在BSF层113上，类似于层109a和109b，从而形成用以将子电池B连接到子电池C的欧姆电路元件。层114a优选由p++AlGaAs组成，且层114b优选由n++InGaP组成。
势垒层115(优选由n型InGa(Al)P组成)在隧道二极管114a/114b上沉积到约1.0微米的厚度。此势垒层意在防止贯穿式位错在与进入中间和顶部子电池B和C中的生长方向相对的方向上或在进入底部子电池A的生长方向上传播，且在2007年9月24日申请的共同待决的第11/860,183号美国专利申请案中更明确地描述。
使用表面活性剂将变质层(或经分级夹层)116沉积在势垒层115上。层116优选是组分上呈阶梯状分级的一系列InGaAlAs层，优选具有单调改变的晶格常数，以便实现从子电池B到子电池C的半导体结构中的晶格常数的逐渐转变，同时使贯穿式位错的发生减到最少。层116的能带隙在其整个厚度上是恒定的，优选约等于1.5eV，或以其它方式与略比中间子电池B的能带隙大的值一致。经分级夹层的优选实施例还可表达为由(InxGa1-x)yAl1-yAs组成，其中x和y经选择以使得所述夹层的能带隙保持恒定于约1.50eV或其它适当的能带隙。
在变质层116的表面活性剂辅助式生长中，在层116的生长期间将合适的化学元素引入到反应堆中，以改进所述层的表面特性。在优选实施例中，此元素可为掺杂剂或供电子原子，例如硒(Se)或碲(Te)。因此，少量Se或Te并入变质层116中，且保留在完成的太阳能电池中。尽管Se或Te是优选的n型掺杂剂原子，但也可使用其它非等电子表面活性剂。
表面活性剂辅助式生长产生光滑得多或经平面化的表面。由于表面拓扑在半导体材料生长且层变得较厚时影响了半导体材料的整体性质，所以表面活性剂的使用使活性区中的贯穿式位错减到最小，且因此改进总体太阳能电池效率。
作为对使用非等电子的替代方案，可使用等电子表面活性剂。术语“等电子”指代例如锑(Sb)或铋(Bi)等表面活性剂，因为此些元素与变质缓冲层中的InGaP的P原子或InGaAlAs中的As原子具有相同数目的价电子。此Sb或Bi表面活性剂通常不会并入变质层16中。
在替代实施例中，其中太阳能电池仅具有两个子电池，且“中间”电池B是最终的太阳能电池中的最上或顶部子电池，其中“顶部”子电池B通常将具有1.8eV到1.9eV的能带隙，而夹层的能带隙将保持恒定于1.9eV。
在上文所述的万拉斯等人的论文中所描述的倒置变质结构中，变质层由九个组分上分级的InGaP阶梯组成，其中每一阶梯层具有0.25微米的厚度。因此，万拉斯等人的每一层具有不同的能带隙。在本发明的优选实施例中，层116由多个InGaAlAs层组成，其具有单调改变的晶格常数，每一层具有相同的约1.5eV的能带隙。
利用例如InGaAlAs的恒定能带隙材料的优点在于：在标准的商业MOCVD反应堆中，基于砷化物的半导体材料处理起来要容易得多，同时少量的铝确保变质层的辐射透明度。
尽管出于可制造性和辐射透明度的原因，本发明的优选实施例将多个InGaAlAs层用于变质层116，但本发明的其它实施例可利用不同的材料系统来实现从子电池B到子电池C的晶格常数改变。因此，使用组分上分级的InGaP的万拉斯系统是本发明的第二实施例。本发明的其它实施例可利用连续分级(而非阶梯状分级)的材料。更一般地说，经分级夹层可由基于As、P、N、Sb的III-V化合物半导体中的任一者组成，所述半导体符合以下约束条件：具有大于或等于第二太阳能电池的平面内晶格参数且小于或等于第三太阳能电池的平面内晶格参数的平面内晶格参数且具有大于第二太阳能电池的能带隙能量的能带隙能量。
在本发明的另一实施例中，任选的第二势垒层117可沉积在InGaAlAs变质层116上。第二势垒层117通常将具有与势垒层115的组分不同的组分，且实质上执行防止贯穿式位错传播的相同功能。在优选实施例中，势垒层117为n+型GaInP。
优选由n+型GaInP组成的窗口层118接着沉积在势垒层117上(或在没有第二势垒层的情况下，直接沉积在层116上)。此窗口层操作以减少子电池“C”中的重组损耗。所属领域的技术人员应明白，在不脱离本发明的范围的情况下，可在电池结构中添加或删除额外的层。
在窗口层118的顶部沉积电池C的层：n+型发射极层119和p型基极层120。这些层优选分别由n+型InGaAs和n+型InGaAs组成，或分别由n+型InGaP和p型InGaAs(针对异质结子电池)组成，但也可使用与晶格常数和能带隙要求一致的其它合适材料。将结合图16来论述层119和120的掺杂分布。
优选由InGaAlAs组成的BSF层121接着沉积在电池C的顶部，所述BSF层执行与BSF层108和113相同的功能。
最终，高能带隙接触层122(优选由InGaAlAs组成)沉积在BSF层121上。
添加到单结或多结光伏电池中的较低能带隙光伏电池的底部(未照射)侧的此接触层可经配制以减少穿过电池的光的吸收，使得(i)位于其下方(未照射侧)的欧姆金属接触层还将充当镜面层，且(ii)接触层不必被选择性地蚀刻掉，以防止吸收。
所属领域的技术人员应明白，在不脱离本发明的范围的情况下，可在电池结构中添加或删除额外的层。
图3是在下一工艺步骤之后图2的太阳能电池的横截面图，在所述下一工艺步骤中金属接触层123沉积在p+半导体接触层122上。所述金属优选是金属层Ti/Au/Ag/Au或Ti/Pd/Ag的序列，但也可使用其它合适的序列和材料。
而且，所选择的金属接触方案是在热处理以激活欧姆接触之后与半导体具有平面界面的金属接触方案。这样做使得(1)不必在金属接触区域中沉积并选择性地蚀刻使金属与半导体分离的介电层；以及(2)接触层在所关注的波长范围上是镜面反射的。
图4是在下一工艺步骤之后图3的太阳能电池的横截面图，在所述下一工艺步骤中接合层124沉积在金属层123上。本发明中的接合材料优选为金-锡低共熔焊料，优选厚度为约2.5微米。
图5A是在下一工艺步骤之后图4的太阳能电池的横截面图，在所述下一工艺步骤中附接代用衬底125。在本发明的优选实施例中，代用衬底具有在每开尔文度6ppm到7ppm的范围内的热膨胀系数，且优选由具有大约80％的硅和20％的铝的硅铝合金组成。还可使用与制造工艺相适应且具有合适的热膨胀系数的其它材料，例如铁镍(Fe-Ni)。在优选实施例中，合金是通过喷涂工艺沉积的，且接合在超过280摄氏度(合金的熔点)的温度下发生。代用衬底的厚度优选为约500微米，且永久接合到金属层123。还可使用例如2008年11月5日申请的共同待决的第12/265,113号美国专利申请案中所描述的接合工艺。
图5B是在下一工艺步骤之后图5A的太阳能电池的横截面图，在所述下一工艺步骤中，通过抛光、研磨和/或蚀刻步骤的序列来移除原始衬底，其中移除衬底101和缓冲层103。特定蚀刻剂的选择取决于生长衬底。
图5C是图5B的太阳能电池的横截面图，其中代用衬底125的定向在图的底部。本申请案中的后续图将假定此定向。
图6是图5B的太阳能电池的简化横截面图，其仅描绘代用衬底125上的少数几个顶部层和下部层。
图7是在下一工艺步骤之后图6的太阳能电池的横截面图，在所述下一工艺步骤中，通过HCl/H20溶液来移除蚀刻终止层103。
图8是在下一序列的工艺步骤之后图7的太阳能电池的横截面图，在所述工艺步骤中，将光致抗蚀剂掩膜(未图示)放置在接触层104上以形成栅格线501。如下文将更详细地描述，栅格线501经由蒸镀而沉积且以光刻方式图案化并沉积在接触层104上。所述掩膜随后被剥离以形成完成的金属栅格线501，如图中所描绘。
如以引用的方式并入本文中的2008年7月18日申请的第12/218,582号美国专利申请案中更全面地描述，栅格线501优选由层Pd/Ge/Ti/Pd/Au的序列组成，但也可使用其它合适序列和材料。
图9是在下一工艺步骤之后图8的太阳能电池的横截面图，在所述下一工艺步骤中，使用柠檬酸/过氧化氢蚀刻混合物将栅格线用作掩膜来将表面向下蚀刻到窗口层105。
图10A是其中实施了四个太阳能电池的晶片的俯视平面图。对四个电池的描绘仅是出于说明目的，且本发明不限于每晶片任何特定数目个电池。
在每一电池中，存在栅格线501(在图9中以横截面更明确地展示)、互连总线502和接触垫503。栅格和总线以及接触垫的几何形状和数目是说明性的，且本发明不限于所说明的实施例。
图10B是具有图10A中所示的四个太阳能电池的晶片的仰视平面图。
图11是在下一工艺步骤之后图9的太阳能电池的横截面图，在所述下一工艺步骤中，将抗反射(ARC)介电涂层130涂施在具有栅格线501的晶片的“底部”侧的整个表面上。
图12A和图12B是根据本发明在下一工艺步骤之后图11的太阳能电池的横截面图，在所述下一工艺步骤中，使用磷化物和砷化物蚀刻剂将第一环形沟道510和第二环形沟道511或半导体结构的部分向下蚀刻到金属层123。如2008年8月12日申请的第12/190,449号美国专利申请案中更明确地描述，这些沟道界定电池与晶片的其余部分之间的外围边界，且留下构成太阳能电池的台面结构。图12A和图12B中所描绘的横截面是如从图13中所示的A-A平面所见的横截面。在优选实施例中，沟道510大体上比沟道511宽。
图13是图12B的晶片的俯视平面图，其描绘蚀刻在每一电池的周边周围的沟道510和511。
图14是在通过沟道511从晶片切割或划割个别太阳能电池(图13所示的电池1、电池2等)，留下延伸穿过代用衬底125的垂直边缘512之后，图12A或图12B的太阳能电池的横截面图。在本发明的此第一实施例中，在不需要盖玻璃(例如下文将描述的第二实施例中所提供)的应用中，代用衬底125形成用于太阳能电池的支撑件。在此实施例中，可通过沟道510形成与金属接触层123的电接触。
图15是在本发明的第二实施例中的下一工艺步骤之后图12的太阳能电池的横截面图，在所述下一工艺步骤中，盖玻璃514通过粘合剂513紧固到电池的顶部。盖玻璃514的厚度通常为约4密耳且优选覆盖整个沟道510，但不延伸到沟道511。尽管使用盖玻璃是优选实施例，但并不是所有实施方案所必需的，且还可利用额外的层或结构来提供对太阳能电池的额外支撑或环境保护。
图16是本发明的倒置变质多结太阳能电池的一个或一个以上子电池中的发射极层和基极层中的掺杂分布的曲线图。以引用的方式并入本文中的2007年12月13日申请的共同待决的第11/956,069号美国专利申请案中更明确地描述在本发明的范围内的各种掺杂分布以及此些掺杂分布的优点。本文中所描绘的掺杂分布仅是说明性的，且如所属领域的技术人员将明白，可在不脱离本发明的范围的情况下，利用其它更复杂的分布。
图17是描绘根据本发明的太阳能电池的电流和电压特性的曲线图。所述太阳能电池具有约3.074伏的开路电压(Voc)，约16.8mA/cm2的短路电流、约85.7％的填充因数和32.7％的效
将理解，上文所描述的元素中的每一者或两者或两者以上一起还可在与上文所描述的构造类型不同的其它类型构造中得到有用应用。
尽管本发明的优选实施例利用三个子电池的垂直堆叠，但本发明可应用于具有更少或更多数目的子电池(即，两结电池、四结电池、五结电池等)的堆叠，如2008年11月10日申请的第12/267,812号美国专利申请案中更明确地描述。在四个或四个以上结的电池的情况下，还可利用一个以上变质分级夹层的使用。
另外，尽管本发明的实施例配置有顶部和底部电触点，但可替代地借助于到子电池之间的侧向导电半导体层的金属触点来接触子电池。此些布置可用于形成3端子、4端子，且一般来说，n端子装置。可使用这些额外端子来将子电池互连在电路中，使得可有效地使用每一子电池中的大多数可用光生电流密度，从而产生多结电池的高效率，但光生电流密度在各个子电池中通常是不同的。
如上文所述，本发明可利用一个或一个以上或所有同质结电池或子电池(即，其中在p型半导体与n型半导体之间形成p-n结的电池或子电池，所述两个半导体具有相同的化学组分和相同的能带隙，不同之处仅在于掺杂剂种类和类型)以及一个或一个以上异质结电池或子电池的布置。具有p型和n型InGaP的子电池A是同质结子电池的一个实例。或者，如2008年1月31日申请的第12/023,772号美国专利申请案中更明确地描述，本发明可利用一个或一个以上或所有异质结电池或子电池，即其中在p型半导体与n型半导体之间形成p-n结的电池或子电池，其中除了在形成p-n结的p型区和n型区中利用不同的掺杂剂种类和类型之外，所述半导体在n型区中具有不同化学组分的半导体材料，且/或在p型区中具有不同的能带隙能量。
在某些电池中，薄的所谓的“本征层”可放置在发射极层与基极层之间，其与发射极层或基极层具有相同或不同的组分。本征层可用以抑制空间电荷区中的少数载流子重组。类似地，基极层或发射极层在其部分或全部厚度上还可为本征的或被无意掺杂的(“NID”)。2008年10月16日申请的共同待决的第12/253,051号美国专利申请案中更明确地描述某些此类配置。
窗口层或BSF层的组分可利用符合晶格常数和能带隙要求的其它半导体化合物，且可包含AlInP、AlAs、AlP、AlGaInP、AlGaAsP、AlGaInAs、AlGaInPAs、GaInP、GaInAs、GaInPAs、AlGaAs、AlInAs、AlInPAs、GaAsSb、AlAsSb、GaAlAsSb、AlInSb、GaInSb、Al GaInSb、AIN、GaN、InN、GaInN、Al GaInN、GaInNAs、Al GaInNAs、ZnSSe、CdSSe，以及类似材料，且仍属于本发明的精神中。
虽然已将本发明说明和描述为在倒置变质多结太阳能电池中体现，但不希望本发明限于所示的细节，因为在不以任何方式脱离本发明的精神的情况下，可作出各种修改和结构改变。
因此，虽然本发明的描述已主要集中在太阳能电池或光伏装置上，但所属领域的技术人员知道，其它光电装置(例如，热光伏(TPV)电池、光电检测器和发光二极管(LED))在结构、物理学和材料上非常类似于光伏装置，其中在掺杂和少数载流子寿命方面有一些微小变化。举例来说，光电检测器可与上文所描述的光伏装置具有相同的材料和结构，但可能被较轻地掺杂以获得灵敏度而不是产生电力。另一方面，LED也可被制成具有类似的结构和材料，但可能被较重地掺杂以缩短重组时间，从而获得用以产生光而不是电力的辐射寿命。因此，本发明还应用于具有上文针对光伏电池而描述的结构、物质组分、制造物件和改进的光电检测器和LED。
在没有进一步分析的情况下，上述内容将很全面地揭露本发明的要点，以致他人可通过应用当前知识，在不省略从现有技术的角度来看相当大地构成本发明的一般或特定方面的本质特性的特征的情况下，容易地使本发明适合于各种应用，且因此，此类适应应该且既定被理解为在所附权利要求书的均等物的含义和范围内。

Claims (13)

1.一种制造太阳能电池的方法，其包括：
提供第一衬底；
在第一衬底上沉积形成太阳能电池的半导体材料层序列；
安装并接合代用第二衬底，所述代用第二衬底由热膨胀系数大体上类似于所述层序列的顶部上的半导体层的热膨胀系数的材料组成；以及
移除所述第一衬底。
2.根据权利要求1所述的制造太阳能电池的方法，其中所述接合步骤是低共熔接合。
3.根据权利要求1所述的制造太阳能电池的方法，其中所述代用第二衬底的所述热膨胀系数在每开尔文度6ppm到7ppm的范围内。
4.根据权利要求1所述的制造太阳能电池的方法，其中所述代用第二衬底由具有大约80％的硅和20％的铝的硅铝合金组成。
5.根据权利要求1所述的制造太阳能电池的方法，其中所述沉积层序列包括：
形成第一子电池，其包括具有第一能带隙和第一晶格常数的第一半导体材料；
形成第二子电池，其包括具有第二能带隙和第二晶格常数的第二半导体材料，其中所述第二能带隙小于所述第一能带隙，且所述第二晶格常数大于所述第一晶格常数到所述第二晶格常数；以及
形成定位于所述第一子电池与所述第二子电池之间的晶格常数过渡材料，所述晶格常数过渡材料具有从所述第一晶格常数逐渐改变为所述第二晶格常数的晶格常数。
6.根据权利要求5所述的制造太阳能电池的方法，其中所述过渡材料由基于As、P、N、Sb的II-V化合物半导体中的任一者组成，所述半导体符合以下约束条件：具有大于或等于所述第一子电池的平面内晶格参数且小于或等于所述第二子电池的平面内晶格参数的平面内晶格参数，且具有大于所述第二子电池的能带隙能量的能带隙能量，且所述过渡材料的所述能带隙在其整个厚度上保持恒定于大约1.50eV。
7.根据权利要求5所述的制造太阳能电池的方法，其中所述过渡材料由(InxGa1-x)yAl1-yAs组成，其中x和y经选择以使得夹层材料的能带隙在其整个厚度上保持恒定。
8.根据权利要求1所述的制造太阳能电池的方法，其中所述半导体材料层序列形成：底部子电池，其具有在0.8eV到1.2eV的范围内的能带隙；
中间子电池，其具有在1.2eV到1.6eV的范围内的能带隙，所述中间子电池安置在所述底部电池上并与所述底部电池晶格失配；以及
顶部子电池，其具有在1.8eV到2.1eV的范围内的能带隙，且安置在所述中间电池上并与所述中间电池晶格匹配。
9.根据权利要求8所述的制造太阳能电池的方法，其中所述顶部子电池由InGa(Al)P组成。
10.根据权利要求8所述的制造太阳能电池的方法，其中所述中间子电池由GaAs、GaInP、GaInAs、GaAsSb或GaInAsN发射极区和GaAs、GaInAs、GaAsSb或GaInAsN基极区组成。
11.根据权利要求8所述的制造太阳能电池的方法，其中所述底部太阳能子电池由InGaAs基极和发射极层组成，或由InGaAs基极层和InGaP发射极层组成。
12.根据权利要求1所述的制造太阳能电池的方法，其中所述第一衬底由砷化镓或锗组成。
13.根据权利要求1所述的制造太阳能电池的方法，其中通过研磨、抛光或蚀刻来移除所述第一衬底。
CN200910223616A 2008-11-14 2009-11-13 制造太阳能电池的方法 Pending CN101740663A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/271,127 US20100122764A1 (en) 2008-11-14 2008-11-14 Surrogate Substrates for Inverted Metamorphic Multijunction Solar Cells
US12/271,127 2008-11-14

Publications (1)

Publication Number Publication Date
CN101740663A true CN101740663A (zh) 2010-06-16

Family

ID=42171052

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200910223616A Pending CN101740663A (zh) 2008-11-14 2009-11-13 制造太阳能电池的方法

Country Status (4)

Country Link
US (1) US20100122764A1 (zh)
JP (1) JP2010118666A (zh)
CN (1) CN101740663A (zh)
TW (1) TWI488316B (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101976691A (zh) * 2010-08-23 2011-02-16 北京工业大学 一种五结化合物半导体太阳能光伏电池芯片
CN102157623A (zh) * 2011-03-08 2011-08-17 中国科学院苏州纳米技术与纳米仿生研究所 一种薄膜太阳能电池衬底的剥离转移方法
CN115084308A (zh) * 2021-03-15 2022-09-20 中国科学院物理研究所 锗衬底-砷化镓/锗异质结薄膜复合结构及其制法和应用

Families Citing this family (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9634172B1 (en) 2007-09-24 2017-04-25 Solaero Technologies Corp. Inverted metamorphic multijunction solar cell with multiple metamorphic layers
US20090078309A1 (en) * 2007-09-24 2009-03-26 Emcore Corporation Barrier Layers In Inverted Metamorphic Multijunction Solar Cells
US10170656B2 (en) 2009-03-10 2019-01-01 Solaero Technologies Corp. Inverted metamorphic multijunction solar cell with a single metamorphic layer
US10381501B2 (en) 2006-06-02 2019-08-13 Solaero Technologies Corp. Inverted metamorphic multijunction solar cell with multiple metamorphic layers
US20090078310A1 (en) * 2007-09-24 2009-03-26 Emcore Corporation Heterojunction Subcells In Inverted Metamorphic Multijunction Solar Cells
US20100229926A1 (en) 2009-03-10 2010-09-16 Emcore Solar Power, Inc. Four Junction Inverted Metamorphic Multijunction Solar Cell with a Single Metamorphic Layer
US9117966B2 (en) 2007-09-24 2015-08-25 Solaero Technologies Corp. Inverted metamorphic multijunction solar cell with two metamorphic layers and homojunction top cell
US20100122724A1 (en) * 2008-11-14 2010-05-20 Emcore Solar Power, Inc. Four Junction Inverted Metamorphic Multijunction Solar Cell with Two Metamorphic Layers
US20100229913A1 (en) * 2009-01-29 2010-09-16 Emcore Solar Power, Inc. Contact Layout and String Interconnection of Inverted Metamorphic Multijunction Solar Cells
US20100047959A1 (en) * 2006-08-07 2010-02-25 Emcore Solar Power, Inc. Epitaxial Lift Off on Film Mounted Inverted Metamorphic Multijunction Solar Cells
US20100203730A1 (en) * 2009-02-09 2010-08-12 Emcore Solar Power, Inc. Epitaxial Lift Off in Inverted Metamorphic Multijunction Solar Cells
US20100093127A1 (en) * 2006-12-27 2010-04-15 Emcore Solar Power, Inc. Inverted Metamorphic Multijunction Solar Cell Mounted on Metallized Flexible Film
US20110041898A1 (en) * 2009-08-19 2011-02-24 Emcore Solar Power, Inc. Back Metal Layers in Inverted Metamorphic Multijunction Solar Cells
US8895342B2 (en) 2007-09-24 2014-11-25 Emcore Solar Power, Inc. Heterojunction subcells in inverted metamorphic multijunction solar cells
US10381505B2 (en) 2007-09-24 2019-08-13 Solaero Technologies Corp. Inverted metamorphic multijunction solar cells including metamorphic layers
US20100233838A1 (en) * 2009-03-10 2010-09-16 Emcore Solar Power, Inc. Mounting of Solar Cells on a Flexible Substrate
US20090155952A1 (en) * 2007-12-13 2009-06-18 Emcore Corporation Exponentially Doped Layers In Inverted Metamorphic Multijunction Solar Cells
US20090272430A1 (en) * 2008-04-30 2009-11-05 Emcore Solar Power, Inc. Refractive Index Matching in Inverted Metamorphic Multijunction Solar Cells
US20100012175A1 (en) 2008-07-16 2010-01-21 Emcore Solar Power, Inc. Ohmic n-contact formed at low temperature in inverted metamorphic multijunction solar cells
US20090272438A1 (en) * 2008-05-05 2009-11-05 Emcore Corporation Strain Balanced Multiple Quantum Well Subcell In Inverted Metamorphic Multijunction Solar Cell
US20100012174A1 (en) * 2008-07-16 2010-01-21 Emcore Corporation High band gap contact layer in inverted metamorphic multijunction solar cells
US9287438B1 (en) * 2008-07-16 2016-03-15 Solaero Technologies Corp. Method for forming ohmic N-contacts at low temperature in inverted metamorphic multijunction solar cells with contaminant isolation
US8263853B2 (en) 2008-08-07 2012-09-11 Emcore Solar Power, Inc. Wafer level interconnection of inverted metamorphic multijunction solar cells
US8236600B2 (en) * 2008-11-10 2012-08-07 Emcore Solar Power, Inc. Joining method for preparing an inverted metamorphic multijunction solar cell
US10541349B1 (en) 2008-12-17 2020-01-21 Solaero Technologies Corp. Methods of forming inverted multijunction solar cells with distributed Bragg reflector
US9018521B1 (en) 2008-12-17 2015-04-28 Solaero Technologies Corp. Inverted metamorphic multijunction solar cell with DBR layer adjacent to the top subcell
US7960201B2 (en) * 2009-01-29 2011-06-14 Emcore Solar Power, Inc. String interconnection and fabrication of inverted metamorphic multijunction solar cells
US8778199B2 (en) 2009-02-09 2014-07-15 Emoore Solar Power, Inc. Epitaxial lift off in inverted metamorphic multijunction solar cells
US20100206365A1 (en) * 2009-02-19 2010-08-19 Emcore Solar Power, Inc. Inverted Metamorphic Multijunction Solar Cells on Low Density Carriers
US20100229933A1 (en) * 2009-03-10 2010-09-16 Emcore Solar Power, Inc. Inverted Metamorphic Multijunction Solar Cells with a Supporting Coating
US9018519B1 (en) 2009-03-10 2015-04-28 Solaero Technologies Corp. Inverted metamorphic multijunction solar cells having a permanent supporting substrate
US20100282288A1 (en) * 2009-05-06 2010-11-11 Emcore Solar Power, Inc. Solar Cell Interconnection on a Flexible Substrate
US8263856B2 (en) 2009-08-07 2012-09-11 Emcore Solar Power, Inc. Inverted metamorphic multijunction solar cells with back contacts
DE102009057020B4 (de) * 2009-12-03 2021-04-29 Solaero Technologies Corp. Wachstumssubstrate für invertierte metamorphe Multijunction-Solarzellen
US8187907B1 (en) 2010-05-07 2012-05-29 Emcore Solar Power, Inc. Solder structures for fabrication of inverted metamorphic multijunction solar cells
WO2012149514A2 (en) 2011-04-29 2012-11-01 Amberwave, Inc. Thin film solder bond
FR2981195A1 (fr) 2011-10-11 2013-04-12 Soitec Silicon On Insulator Multi-jonctions dans un dispositif semi-conducteur forme par differentes techniques de depot
CN102790134A (zh) * 2012-08-21 2012-11-21 天津三安光电有限公司 一种高效倒装五结太阳能电池及其制备方法
TWI602315B (zh) 2013-03-08 2017-10-11 索泰克公司 具有經組構成效能更佳之低帶隙主動層之感光元件及相關方法
US10153388B1 (en) 2013-03-15 2018-12-11 Solaero Technologies Corp. Emissivity coating for space solar cell arrays
ITMI20131297A1 (it) * 2013-08-01 2015-02-02 Cesi Ct Elettrotecnico Sperim Entale Italian Cella fotovoltaica con banda proibita variabile
WO2015198117A1 (en) 2014-06-26 2015-12-30 Soitec Semiconductor structures including bonding layers, multijunction photovoltaic cells and related methods
US9758261B1 (en) 2015-01-15 2017-09-12 Solaero Technologies Corp. Inverted metamorphic multijunction solar cell with lightweight laminate substrate
WO2016138514A1 (en) * 2015-02-27 2016-09-01 The Regents Of The University Of Michigan Mechanically stacked tandem photovoltaic cells with intermediate optical filters
DE102015006379B4 (de) * 2015-05-18 2022-03-17 Azur Space Solar Power Gmbh Skalierbare Spannungsquelle
US9985161B2 (en) * 2016-08-26 2018-05-29 Solaero Technologies Corp. Multijunction metamorphic solar cell for space applications
US9935209B2 (en) * 2016-01-28 2018-04-03 Solaero Technologies Corp. Multijunction metamorphic solar cell for space applications
FR3043254B1 (fr) * 2015-11-04 2018-03-16 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de realisation d'un dispositif electronique
CN105470115B (zh) * 2015-12-08 2018-10-23 中国电子科技集团公司第十八研究所 一种将砷化镓外延层转移至金属柔性衬底的方法
DE102016013749A1 (de) * 2016-11-18 2018-05-24 Azur Space Solar Power Gmbh Stapelförmige Halbleiterstruktur
US20180226533A1 (en) * 2017-02-08 2018-08-09 Amberwave Inc. Thin Film Solder Bond
US20190181289A1 (en) 2017-12-11 2019-06-13 Solaero Technologies Corp. Multijunction solar cells
JP7290939B2 (ja) * 2018-12-20 2023-06-14 シャープ株式会社 Ｉｉｉ－ｖ族化合物半導体太陽電池および人工衛星
KR102472195B1 (ko) * 2020-11-26 2022-11-29 한국광기술원 그레이딩 구조를 갖는 다중접합 태양전지

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4393576A (en) * 1980-09-26 1983-07-19 Licenta Patent-Verwaltungs-Gmbh Method of producing electrical contacts on a silicon solar cell
US5298085A (en) * 1992-03-24 1994-03-29 Aec-Able Engineering Company, Inc. Support blanket for solar cell arrays
US20060144435A1 (en) * 2002-05-21 2006-07-06 Wanlass Mark W High-efficiency, monolithic, multi-bandgap, tandem photovoltaic energy converters

Family Cites Families (87)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3488834A (en) * 1965-10-20 1970-01-13 Texas Instruments Inc Microelectronic circuit formed in an insulating substrate and method of making same
US3964155A (en) * 1972-02-23 1976-06-22 The United States Of America As Represented By The Secretary Of The Navy Method of planar mounting of silicon solar cells
US4001864A (en) * 1976-01-30 1977-01-04 Gibbons James F Semiconductor p-n junction solar cell and method of manufacture
US4255211A (en) * 1979-12-31 1981-03-10 Chevron Research Company Multilayer photovoltaic solar cell with semiconductor layer at shorting junction interface
US4338480A (en) * 1980-12-29 1982-07-06 Varian Associates, Inc. Stacked multijunction photovoltaic converters
US4881979A (en) * 1984-08-29 1989-11-21 Varian Associates, Inc. Junctions for monolithic cascade solar cells and methods
EP0183016B1 (en) * 1984-10-03 1989-09-20 Sumitomo Electric Industries Limited Material for a semiconductor device and process for its manufacture
US4612408A (en) * 1984-10-22 1986-09-16 Sera Solar Corporation Electrically isolated semiconductor integrated photodiode circuits and method
US4677250A (en) * 1985-10-30 1987-06-30 Astrosystems, Inc. Fault tolerant thin-film photovoltaic cell
JPS62291183A (ja) * 1986-06-11 1987-12-17 Nippon Telegr & Teleph Corp <Ntt> 多接合半導体光電変換素子の製造方法
US5217539A (en) * 1991-09-05 1993-06-08 The Boeing Company III-V solar cells and doping processes
US5053083A (en) * 1989-05-08 1991-10-01 The Board Of Trustees Of The Leland Stanford Junior University Bilevel contact solar cells
US5021360A (en) * 1989-09-25 1991-06-04 Gte Laboratories Incorporated Method of farbicating highly lattice mismatched quantum well structures
US5322572A (en) * 1989-11-03 1994-06-21 The United States Of America As Represented By The United States Department Of Energy Monolithic tandem solar cell
US5019177A (en) * 1989-11-03 1991-05-28 The United States Of America As Represented By The United States Department Of Energy Monolithic tandem solar cell
US5342453A (en) * 1992-11-13 1994-08-30 Midwest Research Institute Heterojunction solar cell
US5376185A (en) * 1993-05-12 1994-12-27 Midwest Research Institute Single-junction solar cells with the optimum band gap for terrestrial concentrator applications
JP3169497B2 (ja) * 1993-12-24 2001-05-28 三菱電機株式会社 太陽電池の製造方法
US5479032A (en) * 1994-07-21 1995-12-26 Trustees Of Princeton University Multiwavelength infrared focal plane array detector
US6281426B1 (en) * 1997-10-01 2001-08-28 Midwest Research Institute Multi-junction, monolithic solar cell using low-band-gap materials lattice matched to GaAs or Ge
US6482672B1 (en) * 1997-11-06 2002-11-19 Essential Research, Inc. Using a critical composition grading technique to deposit InGaAs epitaxial layers on InP substrates
US5944913A (en) * 1997-11-26 1999-08-31 Sandia Corporation High-efficiency solar cell and method for fabrication
US6166318A (en) * 1998-03-03 2000-12-26 Interface Studies, Inc. Single absorber layer radiated energy conversion device
US6300557B1 (en) * 1998-10-09 2001-10-09 Midwest Research Institute Low-bandgap double-heterostructure InAsP/GaInAs photovoltaic converters
US6239354B1 (en) * 1998-10-09 2001-05-29 Midwest Research Institute Electrical isolation of component cells in monolithically interconnected modules
US6165873A (en) * 1998-11-27 2000-12-26 Nec Corporation Process for manufacturing a semiconductor integrated circuit device
JP3657143B2 (ja) * 1999-04-27 2005-06-08 シャープ株式会社 太陽電池及びその製造方法
US6252287B1 (en) * 1999-05-19 2001-06-26 Sandia Corporation InGaAsN/GaAs heterojunction for multi-junction solar cells
US6340788B1 (en) * 1999-12-02 2002-01-22 Hughes Electronics Corporation Multijunction photovoltaic cells and panels using a silicon or silicon-germanium active substrate cell for space and terrestrial applications
JP3513592B2 (ja) * 2000-09-25 2004-03-31 独立行政法人産業技術総合研究所 太陽電池の製造方法
JP2002185024A (ja) * 2000-12-13 2002-06-28 National Institute Of Advanced Industrial & Technology 太陽電池及びその製造方法
US6815736B2 (en) * 2001-02-09 2004-11-09 Midwest Research Institute Isoelectronic co-doping
US6960490B2 (en) * 2002-03-14 2005-11-01 Epitactix Pty Ltd. Method and resulting structure for manufacturing semiconductor substrates
US6660928B1 (en) * 2002-04-02 2003-12-09 Essential Research, Inc. Multi-junction photovoltaic cell
US6690041B2 (en) * 2002-05-14 2004-02-10 Global Solar Energy, Inc. Monolithically integrated diodes in thin-film photovoltaic devices
US20060162768A1 (en) * 2002-05-21 2006-07-27 Wanlass Mark W Low bandgap, monolithic, multi-bandgap, optoelectronic devices
US6794631B2 (en) * 2002-06-07 2004-09-21 Corning Lasertron, Inc. Three-terminal avalanche photodiode
US7122734B2 (en) * 2002-10-23 2006-10-17 The Boeing Company Isoelectronic surfactant suppression of threading dislocations in metamorphic epitaxial layers
US7071407B2 (en) * 2002-10-31 2006-07-04 Emcore Corporation Method and apparatus of multiplejunction solar cell structure with high band gap heterojunction middle cell
WO2004054003A1 (en) * 2002-12-05 2004-06-24 Blue Photonics, Inc. High efficiency, monolithic multijunction solar cells containing lattice-mismatched materials and methods of forming same
US7812249B2 (en) * 2003-04-14 2010-10-12 The Boeing Company Multijunction photovoltaic cell grown on high-miscut-angle substrate
US20050211291A1 (en) * 2004-03-23 2005-09-29 The Boeing Company Solar cell assembly
US8227689B2 (en) * 2004-06-15 2012-07-24 The Boeing Company Solar cells having a transparent composition-graded buffer layer
WO2006015185A2 (en) * 2004-07-30 2006-02-09 Aonex Technologies, Inc. GaInP/GaAs/Si TRIPLE JUNCTION SOLAR CELL ENABLED BY WAFER BONDING AND LAYER TRANSFER
US7846759B2 (en) * 2004-10-21 2010-12-07 Aonex Technologies, Inc. Multi-junction solar cells and methods of making same using layer transfer and bonding techniques
FR2878076B1 (fr) * 2004-11-17 2007-02-23 St Microelectronics Sa Amincissement d'une plaquette semiconductrice
US10374120B2 (en) * 2005-02-18 2019-08-06 Koninklijke Philips N.V. High efficiency solar cells utilizing wafer bonding and layer transfer to integrate non-lattice matched materials
US7166520B1 (en) * 2005-08-08 2007-01-23 Silicon Genesis Corporation Thin handle substrate method and structure for fabricating devices using one or more films provided by a layer transfer process
US8637759B2 (en) * 2005-12-16 2014-01-28 The Boeing Company Notch filter for triple junction solar cells
US20100186804A1 (en) * 2009-01-29 2010-07-29 Emcore Solar Power, Inc. String Interconnection of Inverted Metamorphic Multijunction Solar Cells on Flexible Perforated Carriers
US20090078309A1 (en) * 2007-09-24 2009-03-26 Emcore Corporation Barrier Layers In Inverted Metamorphic Multijunction Solar Cells
US20100229913A1 (en) * 2009-01-29 2010-09-16 Emcore Solar Power, Inc. Contact Layout and String Interconnection of Inverted Metamorphic Multijunction Solar Cells
US20090078308A1 (en) * 2007-09-24 2009-03-26 Emcore Corporation Thin Inverted Metamorphic Multijunction Solar Cells with Rigid Support
US20100229926A1 (en) * 2009-03-10 2010-09-16 Emcore Solar Power, Inc. Four Junction Inverted Metamorphic Multijunction Solar Cell with a Single Metamorphic Layer
US20100122724A1 (en) * 2008-11-14 2010-05-20 Emcore Solar Power, Inc. Four Junction Inverted Metamorphic Multijunction Solar Cell with Two Metamorphic Layers
US8536445B2 (en) * 2006-06-02 2013-09-17 Emcore Solar Power, Inc. Inverted metamorphic multijunction solar cells
US20090078310A1 (en) * 2007-09-24 2009-03-26 Emcore Corporation Heterojunction Subcells In Inverted Metamorphic Multijunction Solar Cells
US20100047959A1 (en) * 2006-08-07 2010-02-25 Emcore Solar Power, Inc. Epitaxial Lift Off on Film Mounted Inverted Metamorphic Multijunction Solar Cells
US20100203730A1 (en) * 2009-02-09 2010-08-12 Emcore Solar Power, Inc. Epitaxial Lift Off in Inverted Metamorphic Multijunction Solar Cells
US20080029151A1 (en) * 2006-08-07 2008-02-07 Mcglynn Daniel Terrestrial solar power system using III-V semiconductor solar cells
US7842881B2 (en) * 2006-10-19 2010-11-30 Emcore Solar Power, Inc. Solar cell structure with localized doping in cap layer
US20080149173A1 (en) * 2006-12-21 2008-06-26 Sharps Paul R Inverted metamorphic solar cell with bypass diode
US20080245409A1 (en) * 2006-12-27 2008-10-09 Emcore Corporation Inverted Metamorphic Solar Cell Mounted on Flexible Film
US20110041898A1 (en) * 2009-08-19 2011-02-24 Emcore Solar Power, Inc. Back Metal Layers in Inverted Metamorphic Multijunction Solar Cells
US20100093127A1 (en) * 2006-12-27 2010-04-15 Emcore Solar Power, Inc. Inverted Metamorphic Multijunction Solar Cell Mounted on Metallized Flexible Film
US20080185038A1 (en) * 2007-02-02 2008-08-07 Emcore Corporation Inverted metamorphic solar cell with via for backside contacts
US20090038679A1 (en) * 2007-08-09 2009-02-12 Emcore Corporation Thin Multijunction Solar Cells With Plated Metal OHMIC Contact and Support
US20090078311A1 (en) * 2007-09-24 2009-03-26 Emcore Corporation Surfactant Assisted Growth in Barrier Layers In Inverted Metamorphic Multijunction Solar Cells
US20100233838A1 (en) * 2009-03-10 2010-09-16 Emcore Solar Power, Inc. Mounting of Solar Cells on a Flexible Substrate
US20090155952A1 (en) * 2007-12-13 2009-06-18 Emcore Corporation Exponentially Doped Layers In Inverted Metamorphic Multijunction Solar Cells
US20090223554A1 (en) * 2008-03-05 2009-09-10 Emcore Corporation Dual Sided Photovoltaic Package
US20090229662A1 (en) * 2008-03-13 2009-09-17 Emcore Corporation Off-Cut Substrates In Inverted Metamorphic Multijunction Solar Cells
US20090229658A1 (en) * 2008-03-13 2009-09-17 Emcore Corporation Non-Isoelectronic Surfactant Assisted Growth In Inverted Metamorphic Multijunction Solar Cells
US20100012175A1 (en) * 2008-07-16 2010-01-21 Emcore Solar Power, Inc. Ohmic n-contact formed at low temperature in inverted metamorphic multijunction solar cells
US20090272430A1 (en) * 2008-04-30 2009-11-05 Emcore Solar Power, Inc. Refractive Index Matching in Inverted Metamorphic Multijunction Solar Cells
US20090272438A1 (en) * 2008-05-05 2009-11-05 Emcore Corporation Strain Balanced Multiple Quantum Well Subcell In Inverted Metamorphic Multijunction Solar Cell
US20090288703A1 (en) * 2008-05-20 2009-11-26 Emcore Corporation Wide Band Gap Window Layers In Inverted Metamorphic Multijunction Solar Cells
US20100012174A1 (en) * 2008-07-16 2010-01-21 Emcore Corporation High band gap contact layer in inverted metamorphic multijunction solar cells
US8263853B2 (en) * 2008-08-07 2012-09-11 Emcore Solar Power, Inc. Wafer level interconnection of inverted metamorphic multijunction solar cells
US7741146B2 (en) * 2008-08-12 2010-06-22 Emcore Solar Power, Inc. Demounting of inverted metamorphic multijunction solar cells
US8236600B2 (en) * 2008-11-10 2012-08-07 Emcore Solar Power, Inc. Joining method for preparing an inverted metamorphic multijunction solar cell
US20100147366A1 (en) * 2008-12-17 2010-06-17 Emcore Solar Power, Inc. Inverted Metamorphic Multijunction Solar Cells with Distributed Bragg Reflector
US7785989B2 (en) * 2008-12-17 2010-08-31 Emcore Solar Power, Inc. Growth substrates for inverted metamorphic multijunction solar cells
US7960201B2 (en) * 2009-01-29 2011-06-14 Emcore Solar Power, Inc. String interconnection and fabrication of inverted metamorphic multijunction solar cells
US20100206365A1 (en) * 2009-02-19 2010-08-19 Emcore Solar Power, Inc. Inverted Metamorphic Multijunction Solar Cells on Low Density Carriers
US20100282288A1 (en) * 2009-05-06 2010-11-11 Emcore Solar Power, Inc. Solar Cell Interconnection on a Flexible Substrate
US8263856B2 (en) * 2009-08-07 2012-09-11 Emcore Solar Power, Inc. Inverted metamorphic multijunction solar cells with back contacts

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4393576A (en) * 1980-09-26 1983-07-19 Licenta Patent-Verwaltungs-Gmbh Method of producing electrical contacts on a silicon solar cell
US5298085A (en) * 1992-03-24 1994-03-29 Aec-Able Engineering Company, Inc. Support blanket for solar cell arrays
US20060144435A1 (en) * 2002-05-21 2006-07-06 Wanlass Mark W High-efficiency, monolithic, multi-bandgap, tandem photovoltaic energy converters

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101976691A (zh) * 2010-08-23 2011-02-16 北京工业大学 一种五结化合物半导体太阳能光伏电池芯片
CN102157623A (zh) * 2011-03-08 2011-08-17 中国科学院苏州纳米技术与纳米仿生研究所 一种薄膜太阳能电池衬底的剥离转移方法
CN102157623B (zh) * 2011-03-08 2013-03-06 中国科学院苏州纳米技术与纳米仿生研究所 一种薄膜太阳能电池衬底的剥离转移方法
CN115084308A (zh) * 2021-03-15 2022-09-20 中国科学院物理研究所 锗衬底-砷化镓/锗异质结薄膜复合结构及其制法和应用

Also Published As

Publication number Publication date
TW201029197A (en) 2010-08-01
TWI488316B (zh) 2015-06-11
JP2010118666A (ja) 2010-05-27
US20100122764A1 (en) 2010-05-20

Similar Documents

Publication Publication Date Title
CN101740647B (zh) 具有两个变质层的四结倒置变质多结太阳能电池
CN101740663A (zh) 制造太阳能电池的方法
CN101499495B (zh) 倒置变形多结太阳能电池中的异质结子电池
US8969712B2 (en) Four junction inverted metamorphic multijunction solar cell with a single metamorphic layer
US9018521B1 (en) Inverted metamorphic multijunction solar cell with DBR layer adjacent to the top subcell
US7960201B2 (en) String interconnection and fabrication of inverted metamorphic multijunction solar cells
US20150340530A1 (en) Back metal layers in inverted metamorphic multijunction solar cells
EP3159940B1 (en) Multijunction metamorphic solar cell assembly for space applications
US20100206365A1 (en) Inverted Metamorphic Multijunction Solar Cells on Low Density Carriers
US20100229913A1 (en) Contact Layout and String Interconnection of Inverted Metamorphic Multijunction Solar Cells
US20090272430A1 (en) Refractive Index Matching in Inverted Metamorphic Multijunction Solar Cells
US20100093127A1 (en) Inverted Metamorphic Multijunction Solar Cell Mounted on Metallized Flexible Film
US20100186804A1 (en) String Interconnection of Inverted Metamorphic Multijunction Solar Cells on Flexible Perforated Carriers
US20100282306A1 (en) Multijunction Solar Cells with Group IV/III-V Hybrid Alloys
US20100229933A1 (en) Inverted Metamorphic Multijunction Solar Cells with a Supporting Coating
CN101882645A (zh) 具有iv/iii-v族混合合金的反向多结太阳能电池
US20100282307A1 (en) Multijunction Solar Cells with Group IV/III-V Hybrid Alloys for Terrestrial Applications
US10541349B1 (en) Methods of forming inverted multijunction solar cells with distributed Bragg reflector
US9853180B2 (en) Inverted metamorphic multijunction solar cell with surface passivation
US10170656B2 (en) Inverted metamorphic multijunction solar cell with a single metamorphic layer

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20100616