CN101740469A - Method for manufacturing aluminum wiring - Google Patents
Method for manufacturing aluminum wiring Download PDFInfo
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- CN101740469A CN101740469A CN200810202827A CN200810202827A CN101740469A CN 101740469 A CN101740469 A CN 101740469A CN 200810202827 A CN200810202827 A CN 200810202827A CN 200810202827 A CN200810202827 A CN 200810202827A CN 101740469 A CN101740469 A CN 101740469A
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- wiring
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Abstract
The invention relates to a method for manufacturing aluminum wiring, comprising the following steps of: executing a first etching process on aluminum wiring, wherein the first etching process is a reactive ion etching process without applying bias voltage; after the first etching process is executed, executing a second etching process on the aluminum wiring to form an aluminum wiring diagram, wherein the second etching process is a reactive ion etching process applying the bias voltage. The method for manufacturing aluminum wiring remedies the etching defect that the aluminum wiring is not etched through due to the etch rate difference when the aluminum wiring diagram is formed by etching, thereby avoiding the influence on the quality of finally formed semiconductor devices due to the etching defect.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly method for manufacturing aluminum wiring.
Background technology
Metallic aluminium is because its good electric property and self-passivation characteristic (self-passivationperformance), and is widely used in the metal line of semiconductor fabrication process.Wherein, described self-passivation is meant that aluminium is exposed to and can generates very thin oxide layer in the air automatically as protection.At present, the wiring of application aluminium often comprises the steps: as the technology of metal connecting line
Shown in Fig. 1 a, on the Semiconductor substrate 10 that is formed with aluminium wiring layer 11, form anti-reflecting layer 12, and on described anti-reflecting layer 12, form photoresist layer 13;
Shown in Fig. 1 b,, the wiring figure on the photomask is transferred on the photoresist layer 13, and, forms photoresistance figure 14 through after developing to described photoresist layer 13 exposures;
Shown in Fig. 1 c, described Semiconductor substrate 10 is placed reative cell, with described photoresistance figure 14 is mask, aluminium wiring layer under described anti-reflecting layer 12 and the anti-reflecting layer 12 11 is carried out etching, reaction ionic etching method (RIE is adopted in described etching usually, Reactive Ion etch), described reactive ion etching is meant by the radio frequency source in the reative cell and carries out etching after with the reacting gas ionization that described reacting gas often adopts boron chloride (BCl
3) and chlorine (Cl
2) mist, and describedly be etched to etching, guaranteeing the described aluminum steel that should not connect of eating thrown, thereby finally form the aluminium wiring figure.
At for example application number is to find more and above-mentioned relevant information in 98124176 the Chinese patent application.
Yet, in detection, find present aluminium wiring manufacture craft, with reference to shown in Figure 2, should for example be existed shown in the circle not by the etching defect of eating thrown by the aluminium wiring layer of eating thrown.This etching defect may influence the carrying out of subsequent technique, or make the semiconductor device that forms short circuit occur, thereby influence quality of semiconductor devices.
Summary of the invention
The problem to be solved in the present invention is to have etching defect in the existing aluminium Wiring technique, and influence the problem of semiconductor device quality.
For addressing the above problem, the invention provides a kind of method for manufacturing aluminum wiring, comprising:
First etch process is carried out in wiring to aluminium, and described first etch process is a reactive ion etching process, and does not apply bias voltage;
Behind described first etch process, second etch process is carried out in described aluminium wiring, form the aluminium wiring figure, described second etch process is the reactive ion etching process that applies bias voltage.
Compared with prior art, above-mentioned disclosed method for manufacturing aluminum wiring has the following advantages: do not apply bias voltage in reactive ion etching, make that described aluminium wiring layer can be by even attenuate in first etching process.And since described first etch process with aluminium wiring layer attenuate in advance, remedied etch-rate difference when forming the aluminium wiring figure and caused the aluminium not etching defect of eating thrown that connects up, thereby avoided influencing the quality of semiconductor devices of final formation owing to described etching defect owing to etching.
Description of drawings
Fig. 1 a to Fig. 1 c is a kind of enforcement illustration of prior art aluminium Wiring technique;
Fig. 2 is prior art aluminium wiring manufacture craft defective Electronic Speculum figure;
Fig. 3 is a kind of enforcement illustration of method for manufacturing aluminum wiring of the present invention;
Fig. 4 a to 4f is aluminium wiring example of making figure shown in Figure 3;
Fig. 5 is the reactive ion etching chamber figure of aluminium wiring example of making shown in Figure 3;
Fig. 6 is a method of obtaining first etching period in the aluminium wiring example of making shown in Figure 3;
Fig. 7 is that back Electronic Speculum figure is made in aluminium wiring shown in Figure 3.
Embodiment
In detection, find present etching defect, there are following two kinds of situations in described etching defect: 1) after etching is carried out in wiring to the aluminium on the full wafer wafer, the aluminium wiring of crystal circle center's part is by normal eating thrown, the corresponding aluminium wiring of crystal round fringes part is not then by normal eating thrown 2) aluminium of live width broad is routed in after the etching by normal eating thrown, and the narrower corresponding aluminium wiring of live width is not then by normal eating thrown.
By discovering to above-mentioned etching defect, the generation of described situation is because when adopting the method for reactive ion etching etching is carried out in wiring to aluminium, the etch-rate of crystal circle center part will be faster than the etch-rate of crystal round fringes part, and the etch-rate of the aluminium wiring that the etch-rate of the aluminium of live width broad wiring also will be narrower faster than live width.And corresponding because the method for reactive ion etching has higher etch-rate, the difference of the etch quantity that causes owing to etch-rate difference is also bigger.Thereby, crystal circle center's aluminium wiring partly will appear by behind the eating thrown, and the corresponding aluminium wiring of crystal round fringes part is not by eating thrown, and perhaps the aluminium of live width broad connects up by eating thrown, and the narrower corresponding aluminium of live width connects up not by eating thrown.
Given this, a kind of execution mode of method for manufacturing aluminum wiring of the present invention comprises:
First etch process is carried out in wiring to aluminium, and described first etch process is a reactive ion etching process, and does not apply bias voltage;
Behind described first etch process, second etch process is carried out in described aluminium wiring, form the aluminium wiring figure, described second etch process is the reactive ion etching process that applies bias voltage.
Do not apply the reactive ion etching of bias voltage, can make that etching process is more even, and etch-rate is lower, that is to say, for example the etch-rate of crystal circle center, crystal round fringes part will reach unanimity, the etch-rate of the aluminium wiring that similarly, the aluminium of live width broad connects up and live width is narrower also will reach unanimity.(detailed description for this process will be disclosed in follow-up example)
Thereby described aluminium wiring layer can be by even attenuate in first etching process.And since described first etch process with aluminium wiring layer attenuate in advance, remedied etch-rate difference when forming the aluminium wiring figure and caused the aluminium not etching defect of eating thrown that connects up, thereby avoided influencing the quality of semiconductor devices of final formation owing to described etching defect owing to etching.
The example of making below by an aluminium wiring further specifies.With a semiconductor structure with aluminium wiring layer as etch target, for example with reference to shown in Fig. 4 a, described semiconductor structure comprises: substrate 100, aluminium wiring layer 102 in the substrate 100, usually in order to keep the good bonding of aluminium wiring layer 102 and substrate, between substrate 100 and aluminium wiring layer 102 one deck adhesive linkage 101 can also be arranged, the material of described adhesive linkage 101 can adopt for example tantalum nitride usually.And described substrate 100 can be the wafer that has been manufactured with device, and for example substrate herein can be the composite bed (figure does not show) with tetraethoxysilane (TEOS) and silicon nitride.
Shown in Fig. 3 and Fig. 4 b, execution in step s1 at first when aluminium wiring is made forms photoresist layer 103 on aluminium wiring layer 102.For example, can be by coating photoresist on aluminium wiring layer 102 to form photoresist layer 103.In addition, come unstuck inadequately, also can before gluing, form adhesion layers (figure does not show) on aluminium wiring layer 102 surfaces earlier, on adhesion layer, be coated with photoresist then in order to prevent photoresist and aluminium wiring layer 102 adhesive forces.The material of described adhesion layer can adopt for example titanium nitride (TiN) usually.
Shown in Fig. 3 and Fig. 4 c, execution in step s2 forms photoresistance figure 104 to described photoresist layer 104 exposure imagings.Its detailed process comprises: to described photoresist layer 104 exposures, the wiring figure on the photomask is transferred on the photoresist layer 103, and through after developing, forms photoresistance figure 104.
Shown in Fig. 3 and Fig. 4 d, execution in step s3 is a mask with described photoresistance figure 104, and described aluminium wiring layer 102 is carried out first etching.The method that described first etching is adopted is a reactive ion etching, and does not apply bias voltage in etching process.For making explanation clearer, make brief description for reactive ion etching:
Figure 5 shows that a rough schematic that is used to carry out the chamber 200 of reactive ion etching.Described chamber 200 comprises that the reacting gas that is used for feasible input becomes the radio frequency power source 201 and the bias electrode 202 of plasma.Under low pressure, after reacting gas feeds chamber 200, under the exciting of radio frequency power source 201, produce ionization and form plasma, plasma is made up of charged electronics and ion, gas in the reaction cavity except being transformed into ion, can also absorbing energy and form a large amount of active groups under the bump of electronics.And described active group will form chemical reaction with the material surface that is etched, and reaction product breaks away from the material surface that is etched, and be extracted out chamber 200 by vacuum system.Wafer 203 is to be placed on the less bias electrode of area 202, when bias electrode moves, a Dc bias can form between plasma and this electrode, and the reacting gas ion that makes positively charged quickens to bombard the material surface that is etched, this ion bombardment can be accelerated the chemical reaction on surface greatly, and the desorption of reaction product, thereby cause very high etch-rate.
Do not apply bias voltage in this step and promptly be meant and do not move bias electrode 202, and only by excite the plasma that forms that aluminium wiring layer 103 is carried out etching through radio frequency power source 201.Owing to there is not above-mentioned Dc bias to make that reacting gas ion bombardment aluminium wiring layer 103, described etching reaction are after the reacting gas ion freely is attached to aluminium wiring layer 103 surfaces in fact, the chemical reaction that carries out with aluminium.Thereby etch-rate is slower, and the etch-rate of wafer each several part can be consistent, and also can be consistent for the etch-rate of the aluminium wiring of different live widths.Thereby, make described first etching evenly carry out for the attenuate of aluminium wiring thickness, after described first etching is finished, can expect that the thickness thinning of wafer each several part is consistent.
During first etching, the pressure in the described chamber 200 can be 6mt-15mt, for example 6mt, 8mt, 15mt etc., the power of radio frequency power source 201 can be 600w-1300w, for example 600w, 800w, 1300w etc., bias electrode 202 power as mentioned above is 0, etching gas can adopt Cl
2And BCl
3Mist, Cl
2And BCl
3Gas flow ratio can be 1.0-1.5, total flow is 100-150sccm, for example Cl
2And BCl
3Gas flow respectively be 60sccm.In addition, in order to make etching process stable, can also feed helium, the gas flow of helium can be for example 8sccm.
And the described first etched time with reference to shown in Figure 6, can obtain according to following method:
Step s31 measures the product with described etching defect, obtains the not aluminium wiring layer thickness of eating thrown;
Step s32 is according to BCl in first etching
3And Cl
2Gas flow, calculate the first etched etch-rate;
Step s33, the aluminium wiring layer thickness and the first etched etch-rate based on the not eating thrown that is obtained calculated for the first etched time.
Shown in Fig. 3 and Fig. 4 e, execution in step s4, after first etching was finished, continuing with described photoresistance figure 104 was mask, and aluminium wiring layer 102 is carried out second etching, formed the aluminium wiring figure.This step is still carried out etching in the above-mentioned chamber that carries out reactive ion etching 200.The etching of this step need be opened bias electrode, to form Dc bias, makes reacting gas ion bombardment aluminium wiring layer carry out fast-etching.Pressure in the described chamber 200 can be 8mt, and the power of radio frequency power source 201 is 800w, and the power of bias electrode is 400w, and etching gas adopts BCl
3, Cl
2And the mist of CH4, Cl
2And BCl
3Gas flow ratio can be 1.8-5, for example 1.8,3,5 etc., Cl for example
2Gas flow be 300sccm, BCl
3Gas flow be 100sccm.The effect of CH4 is the aluminium wiring layer sidewall when forming polymer protection etching, and the gas flow of CH4 can be 5sccm.In addition, in order to make etching process stable, can also feed helium, the gas flow of helium can be for example 8sccm.
Because above-mentioned first etching step has carried out corresponding attenuate for aluminium wiring layer 102, thus after finishing the second above-mentioned etching, for example with reference to shown in Figure 7, should be by the aluminium wiring layer part 4 of eating thrown by smooth eating thrown.
Behind the intact aluminium wiring layer 102 of etching, continue the adhesive linkage 101 of etching under it, material with described adhesive linkage 101 is that tantalum nitride is an example, still adopt the method for reactive ion etching, pressure in the chamber 200 are 8mt, and the power of radio frequency power source 201 and bias electrode 202 can be consistent with the power of etching aluminium wiring layer 102 before, and for example the power of radio frequency power source 201 is 800w, the power of bias electrode 202 is 400w, and described etching gas adopts BCl
3, Cl
2And the mist of CH4, BCl
3Gas flow can be 115sccm, Cl
2Gas flow can be 135sccm, the gas flow of CH4 can be 5sccm, etching period is decided on the thickness of tantalum nitride.
In addition, also can behind above-mentioned etching step, proceed etching, promptly make the also etched part of substrate 100, to guarantee that tantalum nitride is also by eating thrown.The power and the last step of described cavity indoor pressure, radio frequency power source and bias electrode when crossing etching are consistent, and still adopt BCl
3, Cl
2And the mist of CH4 is as etching gas, but BCl
3Gas flow be reduced to 95sccm, Cl
2Gas flow be reduced to 65sccm, the gas flow of CH4 still remains 5sccm.
Shown in Fig. 4 f, after described mistake etching step was finished, adhesive linkage 101 expose substrate 100, and substrate 100 was also had the etched removal of part by complete eating thrown.
Though the present invention discloses as above with preferred embodiment, the present invention is defined in this.Any those skilled in the art without departing from the spirit and scope of the present invention, all can do various changes and modification, so protection scope of the present invention should be as the criterion with claim institute restricted portion.
Claims (9)
1. a method for manufacturing aluminum wiring is characterized in that, comprising:
First etch process is carried out in wiring to aluminium, and described first etch process is a reactive ion etching process, and does not apply bias voltage;
Behind described first etch process, second etch process is carried out in described aluminium wiring, form the aluminium wiring figure, described second etch process is the reactive ion etching process that applies bias voltage.
2. method for manufacturing aluminum wiring as claimed in claim 1 is characterized in that, described first etch process adopts Cl
2And BCl
3Mist as etching gas.
3. method for manufacturing aluminum wiring as claimed in claim 2 is characterized in that, described Cl
2And BCl
3Gas flow ratio be 1.0-1.5, total flow is 100-150sccm.
4. method for manufacturing aluminum wiring as claimed in claim 3 is characterized in that BCl
3Flow be 60sccm, Cl
2Flow be 60sccm.
5. method for manufacturing aluminum wiring as claimed in claim 1 is characterized in that, described first etch process also comprises the feeding helium, and the gas flow of helium is 8sccm.
6. method for manufacturing aluminum wiring as claimed in claim 1 is characterized in that, described first etching period obtains by following method:
Measurement has the product of described etching defect, obtains the not aluminium wiring layer thickness of eating thrown;
According to flow rate of reactive gas in first etching, calculate the first etched etch-rate;
Based on the aluminium wiring layer thickness and the etch-rate of the not eating thrown that is obtained, calculated for the first etched time.
7. method for manufacturing aluminum wiring as claimed in claim 1 is characterized in that, the radio-frequency power source power of described first etch process is 800w.
8. method for manufacturing aluminum wiring as claimed in claim 1 is characterized in that, the radio-frequency power source power of described second etch process is 800w, and the power that the bias electrode of bias voltage is provided is 400w.
9. method for manufacturing aluminum wiring as claimed in claim 1 is characterized in that, described second etch process adopts BCl
3, Cl
2And the mist of CH4, BCl
3Flow be 100sccm, Cl
2Flow be 300sccm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008102028275A CN101740469B (en) | 2008-11-17 | 2008-11-17 | Method for manufacturing aluminum wiring |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008102028275A CN101740469B (en) | 2008-11-17 | 2008-11-17 | Method for manufacturing aluminum wiring |
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| Publication Number | Publication Date |
|---|---|
| CN101740469A true CN101740469A (en) | 2010-06-16 |
| CN101740469B CN101740469B (en) | 2012-05-16 |
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ID=42463716
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008102028275A Active CN101740469B (en) | 2008-11-17 | 2008-11-17 | Method for manufacturing aluminum wiring |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103789768A (en) * | 2014-02-11 | 2014-05-14 | 国家纳米科学中心 | Nanoscale aluminum etching method |
| CN106571373A (en) * | 2016-10-17 | 2017-04-19 | 武汉华星光电技术有限公司 | Pretreatment method of signal line after being subjected to high-temperature annealing and exposure in preparation process |
| CN108400090A (en) * | 2017-12-22 | 2018-08-14 | 信利（惠州）智能显示有限公司 | Prevent the processing method of Al corruption |
| CN108400128A (en) * | 2017-02-07 | 2018-08-14 | 旺宏电子股份有限公司 | Interconnection structure and its manufacturing method |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1328767C (en) * | 2003-12-18 | 2007-07-25 | 上海华虹Nec电子有限公司 | Multistep dry process etching method for metal wiring |
-
2008
- 2008-11-17 CN CN2008102028275A patent/CN101740469B/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103789768A (en) * | 2014-02-11 | 2014-05-14 | 国家纳米科学中心 | Nanoscale aluminum etching method |
| CN103789768B (en) * | 2014-02-11 | 2015-12-09 | 国家纳米科学中心 | A kind of nano level aluminium lithographic method |
| CN106571373A (en) * | 2016-10-17 | 2017-04-19 | 武汉华星光电技术有限公司 | Pretreatment method of signal line after being subjected to high-temperature annealing and exposure in preparation process |
| CN108400128A (en) * | 2017-02-07 | 2018-08-14 | 旺宏电子股份有限公司 | Interconnection structure and its manufacturing method |
| CN108400128B (en) * | 2017-02-07 | 2020-10-16 | 旺宏电子股份有限公司 | Interconnect structure and method of making the same |
| CN108400090A (en) * | 2017-12-22 | 2018-08-14 | 信利（惠州）智能显示有限公司 | Prevent the processing method of Al corruption |
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| Publication number | Publication date |
|---|---|
| CN101740469B (en) | 2012-05-16 |
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