CN101738804B - Pixel structure - Google Patents
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- CN101738804B CN101738804B CN2009102495900A CN200910249590A CN101738804B CN 101738804 B CN101738804 B CN 101738804B CN 2009102495900 A CN2009102495900 A CN 2009102495900A CN 200910249590 A CN200910249590 A CN 200910249590A CN 101738804 B CN101738804 B CN 101738804B
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Abstract
The invention provides a pixel structure. Each first pixel area is provided with a first pixel unit positioned in a first sub-pixel area and a second pixel unit positioned in a second sub-pixel area; a common wire crosses the first sub-pixel area and the second sub-pixel area and is provided with a first common electrode part in a first common capacitor area positioned in the second sub-pixel area; A first capacitor electrode of the first pixel unit is positioned below the common wire, is electrically connected with a first active component, extends from the first sub-pixel area to the first common capacitor area, and is overlapped with the first common electrode part to form a first extension capacitor. A second pixel electrode of the second pixel unit is electrically connected with a second active component, the second pixel electrode is overlapped with the first common electrode part to form a second storage capacitor, and the second storage capacitor and the first extension capacitor are stacked in the first common capacitor area.
Description
Technical field
The invention relates to a kind of dot structure, and particularly design dot structure in the same area relevant for a kind of storage capacitors with the different subpixel in the same pixel.
Background technology
Along with the significantly progressive and Internet of computer performance, the high development of multimedia technology, it is frivolous that the volume of video or device for image day by day is tending towards.In the development of display, along with the progress of photoelectric technology and semiconductor fabrication, have that high image quality, space utilization efficient are good, the LCD of low consumpting power, advantageous characteristic such as radiationless becomes the main flow in market gradually.
Along with the development of display panel, a kind of in recent years display panels that is called as half source drive (half source driving is designated hereinafter simply as HSD) framework is suggested.Semi-source pole driving architecture can be so that the number of data line reduces by half, so the price of source electrode driver (source driver) also can relatively reduce.
Fig. 1 is the synoptic diagram of existing a kind of liquid crystal display panel pixel structure, and wherein dot structure 100 is that framework with half source drive comes layout.Please refer to Fig. 1, dot structure 100 is and corresponding scanning line 120 and data line 130 electrically connects, and dot structure 100 is mainly formed with the pixel electrode 150 and a storage capacitors 160 of thin film transistor (TFT) 140 corresponding configurations with the thin film transistor (TFT) 140 of sweep trace 120 and data line 130 connections, one by one.Thin film transistor (TFT) 140 is used as the on-off element of dot structure 100, and storage capacitors 160 is in order in the shut-in time of dot structure 100, in order to keep the data voltage on the pixel electrode 150, make it more not be subject on every side electric field effects and fluctuate, to keep the display quality of display panels.
Generally speaking, in order to improve the voltage retention of the dot structure on the display panels, improve the capacitance of storage capacitors usually by the area that increases capacitance electrode.Yet, though increase the capacitance that the mode of capacitance electrode area can promote storage capacitors in the dot structure, can reduce the aperture opening ratio of this dot structure, cause display brightness to reduce.Therefore, how between the storage capacitors of dot structure and aperture opening ratio, average out one of real problem of demanding urgently overcoming for the current pixel structure.
Summary of the invention
The invention provides a kind of dot structure, it can promote the storage capacitors amount of storage capacitors unit area, so can dwindle the shared area of reservior capacitor, and then increases the aperture opening ratio of dot structure.
The present invention proposes a kind of dot structure, is arranged on the substrate, and to define a plurality of pixel regions on substrate, each pixel region has one first sub-pixel area and one second sub-pixel area, and second sub-pixel area has one first shared capacitive region.This dot structure comprises one first sweep trace, one second sweep trace, one first data line and one second data line, a shared distribution, one first pixel cell and one second pixel cell.Shared distribution is crossed first sub-pixel area and second sub-pixel area, and shared distribution has first a common electrode portion that is arranged at the first shared capacitive region.First pixel cell comprises one first active member, one first capacitance electrode and one first pixel electrode, wherein first active member is electrically connected at first sweep trace and first data line, first pixel electrode is positioned at first sub-pixel area, and electrically connect with first active member, first capacitance electrode is disposed at the below of shared distribution, and electrically connect with first active member, and first capacitance electrode comprises first capacitance electrode portion and the first extension electrode portion, wherein first pixel electrode is connected with first active member via first capacitance electrode portion, and the first extension electrode portion extends to the first shared capacitive region from first capacitance electrode portion, makes win extension electrode portion and first common electrode portion overlapping formation, one first extension electric capacity.In addition, second pixel cell comprises one second active member and one second pixel electrode, wherein second active member is electrically connected at second sweep trace and second data line, second pixel electrode is positioned at second sub-pixel area, and electrically connect with second active member, second pixel electrode and the first common electrode portion overlap and constitute one second storage capacitors, and second storage capacitors is arranged in the first shared capacitive region of second sub-pixel area with the first extension electric capacity with stacking.
In one embodiment of this invention, the first above-mentioned capacitance electrode portion for example more is arranged between first sub-pixel area and second sub-pixel area, and making wins constitutes one the 3rd storage capacitors between capacitance electrode portion and the shared distribution.
In one embodiment of this invention, in the first above-mentioned shared capacitive region, the first common electrode portion is for example between second pixel electrode and the first extension electrode portion.
In one embodiment of this invention, above-mentioned dot structure comprises that more one is electrically connected at first auxiliary electrode of common distribution, first auxiliary electrode is arranged in the first shared capacitive region, and be positioned at first capacitance electrode below, constitute one first auxiliary capacitor between first auxiliary electrode and the first extension electrode portion.
In one embodiment of this invention, above-mentioned dot structure can further include one second shared capacitive region, and wherein the second shared capacitive region is arranged in first sub-pixel area.At this moment, shared distribution for example has second a common electrode portion that extends to the second shared capacitive region, and second pixel cell has one second capacitance electrode, and wherein second capacitance electrode and first capacitance electrode are same rete.Particularly, second capacitance electrode comprises one second capacitance electrode portion and one second extension electrode portion, wherein second pixel electrode is connected with second active member via second capacitance electrode portion, the second extension electrode portion extends to the second shared capacitive region from second capacitance electrode portion, makes that constituting one the 4th between the second extension electrode portion and the second common electrode portion extends electric capacity.
In one embodiment of this invention, in the second above-mentioned shared capacitive region, the second common electrode portion also can and first pixel electrode between constitute one the 5th storage capacitors of first pixel cell.And the 5th storage capacitors of first pixel cell for example is to stack in the 4th of second pixel cell to extend on the electric capacity.Perhaps, the second above-mentioned capacitance electrode can also be arranged between first sub-pixel area and second sub-pixel area, makes to constitute one the 6th storage capacitors between second capacitance electrode portion and the shared distribution.
In addition, in one embodiment of this invention, in the second above-mentioned shared capacitive region, the second common electrode portion is positioned between first pixel electrode and the second extension electrode portion.
On the other hand, in one embodiment of this invention, above-mentioned dot structure more can comprise one second auxiliary electrode, wherein second auxiliary electrode electrically connects common distribution, and be arranged in the second shared capacitive region, and be positioned at second capacitance electrode below, make to constitute one second auxiliary capacitor between second auxiliary electrode and the second extension electrode portion.
In one embodiment of this invention, above-mentioned first active member and second active member diagonal line place that is divided into pixel region.
The present invention proposes a kind of dot structure in addition.This dot structure is arranged on the substrate, and defining a plurality of pixel regions on substrate, and each pixel region has one first sub-pixel area and one second sub-pixel area, and second sub-pixel area has one first shared capacitive region.This dot structure comprises one first sweep trace, one second sweep trace, one first data line and one second data line, a shared distribution, one first pixel cell and one second pixel cell.Shared distribution is crossed first sub-pixel area and second sub-pixel area, and extends to the first shared capacitive region.First pixel cell comprises one first active member, one first pixel electrode and one first capacitance electrode, wherein first active member is electrically connected at first sweep trace and first data line, and first pixel electrode is positioned at first sub-pixel area, and electrically connects first active member.First capacitance electrode extends to the first shared capacitive region, win capacitance electrode and shared distribution is overlapped in the first shared capacitive region constitute one first and extend electric capacity.In addition, second pixel cell comprises one second active member and one second pixel electrode, wherein second active member is electrically connected at second sweep trace and second data line, second pixel electrode is positioned at second sub-pixel area, and electrically connect with second active member, second pixel electrode and shared distribution overlap in the first shared capacitive region and constitute one second storage capacitors, and first second storage capacitors of extending the electric capacity and second pixel cell of first pixel cell is arranged in the first shared capacitive region of second sub-pixel area with stacking.
In one embodiment of this invention, the above-mentioned shared distribution that extends to the first shared capacitive region constitutes one first common electrode portion, constitute second storage capacitors between the first common electrode portion and second pixel electrode, and first capacitance electrode comprises one first capacitance electrode portion and one first extension electrode portion.First pixel electrode is connected with first active member via first capacitance electrode portion.The first extension electrode portion extends to the first shared capacitive region from first capacitance electrode portion, and making wins constitutes the first extension electric capacity between the extension electrode portion and the first common electrode portion.
In one embodiment of this invention, the first above-mentioned capacitance electrode is arranged between first sub-pixel area and second sub-pixel area, and constitutes one the 3rd storage capacitors between first capacitance electrode portion and the shared distribution.
In one embodiment of this invention, in the first above-mentioned common electrode area, the first common electrode portion is positioned between second pixel electrode and the first extension electrode portion.
In one embodiment of this invention, above-mentioned dot structure can also comprise one first auxiliary electrode, wherein first auxiliary electrode electrically connects common distribution, and be arranged in the first shared capacitive region, and be positioned at first capacitance electrode below, making wins constitutes one first auxiliary capacitor between the auxiliary electrode and the first extension electrode portion.
In one embodiment of this invention, above-mentioned dot structure is layout one second shared capacitive region in first sub-pixel area further, and shared distribution has second a common electrode portion that extends to the second shared capacitive region.In addition, second pixel cell has one second capacitance electrode, and second capacitance electrode and first capacitance electrode be same rete, makes second capacitance electrode comprise one second capacitance electrode portion and one second extension electrode portion.Specifically, second pixel electrode is connected with second active member via second capacitance electrode portion, the second extension electrode portion extends to the second shared capacitive region from second capacitance electrode portion, makes that constituting one the 4th between the second extension electrode portion and the second common electrode portion extends electric capacity.
In one embodiment of this invention, in the second shared capacitive region, the second common electrode portion also can and first pixel electrode between constitute one the 5th storage capacitors of first pixel cell.And the 5th storage capacitors of first pixel cell for example is to stack in the 4th of second pixel cell to extend on the electric capacity.Perhaps, the second above-mentioned capacitance electrode can also be arranged between first sub-pixel area and second sub-pixel area, makes to constitute one the 6th storage capacitors between second capacitance electrode portion and the shared distribution.
In addition, in one embodiment of this invention, in the second above-mentioned shared capacitive region, the second common electrode portion is positioned between first pixel electrode and the second extension electrode portion.
On the other hand, in one embodiment of this invention, above-mentioned dot structure can further include one second auxiliary electrode, wherein second auxiliary electrode electrically connects common distribution, and be arranged in the second shared capacitive region, and second auxiliary electrode is positioned at second capacitance electrode below, makes to constitute one second auxiliary capacitor between second auxiliary electrode and the second extension electrode portion.
In one embodiment of this invention, above-mentioned first active member and second active member diagonal line place that is divided into pixel region.
Based on above-mentioned, dot structure of the present invention is formed at the storage capacitors of two sub-pixel unit on the same area with stacking, therefore dot structure of the present invention can utilize limited arrangement space fully, promote the storage capacitors amount of storage capacitors unit area, thus, can dwindle the shared area of reservior capacitor, and then increase the aperture opening ratio of dot structure.
For above-mentioned feature and advantage of the present invention can be become apparent, embodiment cited below particularly, and cooperate appended graphic being described in detail below.
Description of drawings
Fig. 1 is the synoptic diagram of existing a kind of dot structure;
Fig. 2 is the synoptic diagram of the dot structure of one embodiment of the invention;
Fig. 3 is the diagrammatic cross-section of the dot structure of Fig. 2 along AA ' profile line;
Fig. 4 is along the another kind of diagrammatic cross-section of the AA ' profile line of Fig. 2 in one embodiment of the invention;
Fig. 5 is the schematic top plan view of a kind of dot structure in one embodiment of the invention;
Fig. 6 is the diagrammatic cross-section of the dot structure of Fig. 5 along BB ' profile line;
Fig. 7 is along the another kind of diagrammatic cross-section of the BB ' profile line of Fig. 5 in one embodiment of the invention.
Drawing reference numeral
100,200,300: dot structure
120: sweep trace
130: data line
140: thin film transistor (TFT)
150: pixel electrode
210: substrate
212: pixel region
212A: first sub-pixel area
212B: second sub-pixel area
214A: the first shared capacitive region
214B: the second shared capacitive region
220A: first sweep trace
220B: second sweep trace
230A: first data line
230B: second data line
232: the first dielectric layers
234: the second dielectric layers
236: gate insulation layer
240: shared distribution
242A: the first common electrode portion
242B: the second common electrode portion
250A: first pixel cell
250B: second pixel cell
260A: first active member
260B: second active member
270A: first pixel electrode
270B: second pixel electrode
280A: first capacitance electrode
280B: second capacitance electrode
282A: first capacitance electrode portion
282B: second capacitance electrode portion
284A: the first extension electrode portion
284B: the second extension electrode portion
290A: first auxiliary electrode
290B: second auxiliary electrode
C1: first extends electric capacity
C2: second storage capacitors
C3: the 3rd storage capacitors
C4: the 4th extends electric capacity
C5: the 5th storage capacitors
C6: the 6th storage capacitors
C1 ': first auxiliary capacitor
C2 ': second auxiliary capacitor
G: grid
Embodiment
The present invention proposes a kind of dot structure, be applicable to liquid crystal display panel pixel structure, the capacitance electrode of wherein a pixel cell is extended in the storage capacitor structure of adjacent pixel unit, see through the multi-layer conductive framework that stacks each other, be formed in the identical shared capacitor regions with storage capacitors with a plurality of pixel cells.Particularly, in the multi-layer conductor leads that stacks each other, for example be as the middle layer with the conductor that electrically connects common voltage, upper strata conductive layer and lower floor's conductive layer then are electrically connected at the different pixels electrode of different pixels unit respectively, thus, can promote the capacitance of unit area storage capacitors significantly.Below will enumerate a little embodiment graphic detailed description dot structure of the present invention of arranging in pairs or groups.
Fig. 2 is the synoptic diagram of the dot structure of one embodiment of the invention.Please refer to Fig. 2, dot structure 200 is arranged on the substrate 210, on substrate 210, to define a plurality of pixel regions 212, wherein in order to clearly demonstrate the associated components in the dot structure 200, in Fig. 2, only schematically show the dot structure 200 that is arranged in a pixel region 212 and describe as representative.
Please refer to Fig. 2, each pixel region 212 has one first sub-pixel area 212A and one second sub-pixel area 212B, and the second sub-pixel area 212B has one first shared capacitive region 214A.As shown in Figure 2, dot structure 200 comprises the first sweep trace 220A, the second sweep trace 220B and first data line 230A and second data line 230B, shared distribution 240, first pixel cell 250A and the second pixel cell 250B vertical with sweep trace 220A, 220B.Furthermore, the first pixel cell 250A mainly is disposed among the first sub-pixel area 212A, and the second pixel cell 250B mainly is disposed at the second sub-pixel area 212B.Specifically, first of the first pixel cell 250A second storage capacitors C2 that extends the capacitor C 1 (or being called first storage capacitors) and the second pixel cell 250B is formed among the first shared capacitive region 214A with stacking each other.
For how the first second storage capacitors C2 that extends the capacitor C 1 and the second pixel cell 250B that clearly demonstrates the first pixel cell 250A stacks in the first shared capacitive region 214A each other, to be example below with dot structure shown in Figure 2 200, collocation one hereinafter will illustrate in the lump along the sectional view of the AA ' profile line of Fig. 2.
Fig. 3 is the diagrammatic cross-section of the dot structure of Fig. 2 along AA ' profile line.Please refer to Fig. 2 and Fig. 3, shared distribution 240 is crossed the first sub-pixel area 212A and the second sub-pixel area 212B, and extends to the first shared capacitive region 214A.On the other hand, the first pixel cell 250A comprises the first active member 260A, the first pixel electrode 270A and the first capacitance electrode 280A, wherein the first active member 260A is electrically connected at the first sweep trace 220A and the first data line 230A, the first pixel electrode 270A is positioned at the first sub-pixel area 212A, and is electrically connected at the first active member 260A.The storage capacitors of the first pixel cell 250A is in order to provide the effect of the pixel voltage of keeping the first pixel electrode 270A after closing at the first active member 260A.It should be noted that, as Fig. 2 and shown in Figure 3, the first capacitance electrode 280A more extends out to the first shared capacitive region 214A that is arranged in the second sub-pixel area 212B in the first sub-pixel area 212A, win capacitance electrode 280A and shared distribution 240 are overlapped in the first shared capacitive region 214A to be constituted first and extends capacitor C 1, owing to the first capacitance electrode 280A constitutes storage capacitors with the part that extends to the second sub-pixel area 212B as electrode, therefore hereinafter be called the first extension capacitor C 1 again and describe.
In the operation of reality, shared distribution 240 is applied in uses voltage altogether, the first capacitance electrode 280A then electrically connects the first pixel electrode 270A, therefore the current potential of the first capacitance electrode 280A equals first pixel voltage of the first pixel electrode 270A in fact, by this, first extends capacitor C 1 and mainly is by the shared distribution 240 with common voltage, has the first capacitance electrode 280A of first pixel voltage and first dielectric layer 232 between the two is constituted.
Please continue to be Fig. 2 with reference to figure 3, the second pixel cell 250B comprises the second active member 260B and the second pixel electrode 270B, wherein the second active member 260B is electrically connected at the second sweep trace 220B and the second data line 230B, the second pixel electrode 270B is positioned at the second sub-pixel area 212B, and electrically connects with the second active member 260B.And, in the present embodiment, the first active member 260A and the second active member 260B are divided into the diagonal line place of pixel region 212, therefore the first capacitance electrode 280A that is connected with the drain of the first active member 260A can directly extend to the first shared capacitive region 214A toward the next door along the same side of dot structure 200, reduce the aperture opening ratio of coiling possible loss, and increase the area of the first shared capacitive region 214A.
What deserves to be mentioned is, the second pixel electrode 270B and the first shared distribution 240 overlap each other in the first shared capacitive region 214A and constitute the second storage capacitors C2, specifically, first of the first pixel cell 250A second storage capacitors C2 that extends the capacitor C 1 and the second pixel cell 250B is arranged among the first shared capacitive region 214A of the second sub-pixel area 212B with stacking each other.
By this, because the first extension capacitor C 1 of the first pixel cell 250A is not to be arranged among the first sub-pixel area 212A, therefore under the considering of the capacitor design value of keeping original storage capacitors, the aperture opening ratio of the first sub-pixel area 212A can be raised effectively.On the other hand, because the first extension capacitor C 1 is to be arranged among the first shared capacitive region 214A of the second sub-pixel area 212B, and should the zone also be the design section of original second storage capacitors C2, therefore the second pixel cell 250B can keep original aperture opening ratio.On the application of reality, the first pixel cell 250A with big aperture opening ratio can be used as main display unit, and the second pixel cell 250B then can be used as time display unit.
More specifically, as Fig. 2 and shown in Figure 3, the shared distribution 240 that extends to the first shared capacitive region 214A constitutes first 242A of common electrode portion, and the first capacitance electrode 280A comprises the first capacitance electrode portion 282A and first 284A of extension electrode portion.As Fig. 2 and shown in Figure 3, the first pixel electrode 270A is connected with the first active member 260A via the first capacitance electrode portion 282A, first 284A of extension electrode portion then extends to the first shared capacitive region 214A from the first capacitance electrode portion 282A, and making wins constitutes the first extension capacitor C 1 between the 284A of extension electrode portion and first 242A of common electrode portion.On the other hand, constitute the second storage capacitors C2 between first 242A of common electrode portion and the second pixel electrode 270B.In other words, first 242A of common electrode portion for example between the second pixel electrode 270B and first 284A of extension electrode portion, professes it, and first 242A of common electrode portion extends the top electrode of capacitor C 1 and the bottom electrode of the second storage capacitors C2 as first simultaneously.And in the present embodiment, the storage capacitors of the first pixel cell 250A integral body can be considered first summation of extending capacitor C 1 and the 3rd storage capacitors C3.
Based on considering of the capacitance of further lifting storage capacitors, the deviser can also be with the further layout of the first capacitance electrode portion 282A (layout) between the first sub-pixel area 212A and the second sub-pixel area 212B, making wins constitutes one the 3rd storage capacitors C3 between capacitance electrode portion 282A and the shared distribution 240, as shown in Figure 2.Certainly, based on above-mentioned notion, the deviser can also further improve the multi-layer conductive framework that stacks in the shared capacitive region.For example, Fig. 4 is along the another kind of diagrammatic cross-section of the AA ' profile line of Fig. 2 in one embodiment of the invention.
Please refer to Fig. 4, can be further in the first shared capacitive region 214A, the first auxiliary electrode 290A is set up in the first capacitance electrode 280A below at the place of stacking of multi-layer conductive, form simultaneously and the formation method of the first auxiliary electrode 290A for example is a grid G with the first active member 260A, changing first auxiliary electrode 290A of speech and the grid of the first active member 260A is the same rete of G.In the operation of reality, the first auxiliary electrode 290A is electrically connected to shared distribution 240, therefore 236 of the first auxiliary electrode 290A, first 284A of extension electrode portion and the gate insulation layers between the two constitute one first auxiliary capacitor C1 ', thus, the first auxiliary capacitor C1 ' can further promote the capacitance of the first extension capacitor C 1.Profess it, in the present embodiment, the storage capacitors of the first pixel cell 250A integral body can be considered first summation of extending capacitor C 1, the first auxiliary capacitor C1 ' and the 3rd storage capacitors C3, it should be noted that, in the present embodiment, the first auxiliary electrode 290A more extends to first capacitance electrode portion 282A below from first 284A of extension electrode portion, so can further increase the storage capacitors of the first pixel cell 250A integral body under the situation that does not reduce aperture opening ratio.
Fig. 5 is the schematic top plan view of a kind of dot structure in one embodiment of the invention.Please refer to Fig. 5, in the present embodiment, dot structure 300 is similar with previous embodiment, only, be provided with respectively in each sub-pixel unit of the dot structure 300 of present embodiment and use capacitive region altogether, in other words, the dot structure 300 of present embodiment is further set up one second shared capacitive region 214B compared to the dot structure 200 of previous embodiment in the first pixel cell 250A, and continue aforesaid design spirit, in the second shared capacitive region 214B, stacked the multi-layer conductor leads structure simultaneously, so that the 4th the 5th storage capacitors C5 that extends the capacitor C 4 (or being called the 4th storage capacitors) and the first pixel cell 250A of the second pixel cell 250B is formed in the shared capacitive region with stacking simultaneously, use the storage capacitors value that improves the unit layout area, and then dwindle the layout area of storage capacitors, increase dot structure 300 aperture opening ratios.
For how the 4th the 5th storage capacitors C5 that extends the capacitor C 4 and the second pixel cell 250B that clearly demonstrates the second pixel cell 250B stacks in the second shared capacitive region 214B each other, to be example below with dot structure shown in Figure 5 300, collocation one is along the sectional view of the BB ' profile line of Fig. 5, hereinafter will illustrate in the lump, wherein the sectional view along AA ' profile line can repeat no more with reference to Fig. 3 among Fig. 5.
Fig. 6 is the diagrammatic cross-section of the dot structure of Fig. 5 along BB ' profile line.Please refer to Fig. 5 and Fig. 6, furthermore, in the present embodiment, dot structure 300 except have with aforementioned dot structure 200 in similar first extend capacitor C 1, the second storage capacitors C2 and the 3rd storage capacitors C3, as shown in Figure 5, shared distribution 240 has more second 242B of common electrode portion that extends to the second shared capacitive region 214B.In addition, the second pixel cell 250B has one second capacitance electrode 280B, and wherein the second capacitance electrode 280B and the first capacitance electrode 280A belong to same rete, and can be by making with the mask processing procedure.
More specifically, the second capacitance electrode 280B comprises one second capacitance electrode portion 282B and one second 284B of extension electrode portion, wherein the second pixel electrode 270B is connected with the second active member 260B via the second capacitance electrode portion 282B, therefore, the second capacitance electrode portion 282B and second pixel electrode 270B equipotential in fact.Second 284B of extension electrode portion extends to the second shared capacitive region 214B from the second capacitance electrode portion 282B, make that constituting the 4th between second 284B of extension electrode portion and second 242B of common electrode portion extends capacitor C 4, therefore owing to the second capacitance electrode 280B constitutes storage capacitors with the part that extends to the first sub-pixel area 212A as electrode, be called the 4th again below and extend capacitor C 4.In addition, as Fig. 5, in the second shared capacitive region 214B, constitute the 5th storage capacitors C5 of the first pixel cell 250A between second 242B of common electrode portion and the first pixel electrode 270A.And the 5th storage capacitors C5 of the first pixel cell 250A stacks in the 4th of the second pixel cell 250B to extend on the capacitor C 4.
Furthermore, in the second shared capacitive region 214B, second 242B of common electrode portion is between the first pixel electrode 270A and second 284B of extension electrode portion, therefore, second 242B of common electrode portion is as the top electrode of the 4th extension electric capacity, and the while is as the bottom electrode of the 5th storage capacitors C5.
In a word, please be simultaneously with reference to Fig. 6 and Fig. 3, in the operation of reality, shared distribution 240 is applied in uses voltage altogether, and the first capacitance electrode 280A, the second capacitance electrode 280B then electrically connect the first pixel electrode 270A, the second pixel electrode 270B respectively.Therefore, as shown in Figure 3, in the first shared capacitive region 214A, first extends capacitor C 1 mainly is by first 242A of common electrode portion with common voltage, has the first capacitance electrode 280A of first pixel voltage and first dielectric layer 232 between the two is constituted, and the second storage capacitors C2 mainly is by first 242A of common electrode portion with common voltage, has the second pixel electrode 270B of second pixel voltage and second dielectric layer 234 between the two is constituted.On the other hand, as shown in Figure 6, in the second shared capacitive region 214B, the 4th extends capacitor C 4 mainly is by second 242B of common electrode portion with common voltage, has the second capacitance electrode 280B of second pixel voltage and first dielectric layer 232 between the two is constituted, and the 5th storage capacitors C5 mainly is by second 242B of common electrode portion with common voltage, has the first pixel electrode 270A of first pixel voltage and first dielectric layer 234 between the two is constituted.
By this, please refer to Fig. 5 and Fig. 6, the second pixel cell 250B is arranged among the first sub-pixel area 212A of the adjacent first pixel cell 250A by the storage capacitors that it is required, therefore when possessing the capacitor design value of former storage capacitors, the aperture opening ratio of the second pixel cell 250B also can further be raised.Thus, in the present embodiment, because the first pixel cell 250A and the second pixel cell 250B all can promote the capacitance of unit area storage capacitors significantly, so the aperture opening ratio of dot structure 300 integral body can be raised significantly.On the application of reality, the first pixel cell 250A and the second pixel cell 250B can constitute a dot structure 300 respectively as a sub-display unit.
Certainly, based on considering of the storage capacitors of the further raising second pixel cell 250B, the deviser can also be with the further layout of the second capacitance electrode portion 282B (layout) between the first sub-pixel area 212A and the second sub-pixel area 212B, making wins constitutes one the 6th storage capacitors C6 between capacitance electrode portion 282A and the shared distribution 240, as shown in Figure 5.In the present embodiment, the integral capacitor value of the storage capacitors of the first pixel cell 250A can be considered first summation of extending capacitor C 1, the 3rd storage capacitors C3 and the 5th storage capacitors C5, and the integral capacitor value of the storage capacitors of the second pixel cell 250B can be considered the second storage capacitors C2, the 4th summation of extending capacitor C 4 and the 6th storage capacitors C6.
Certainly, based on above-mentioned notion, the deviser can also further improve the multi-layer conductive framework that stacks in the shared capacitive region.For example, Fig. 7 is along the another kind of diagrammatic cross-section of the BB ' profile line of Fig. 5 in one embodiment of the invention.Please refer to Fig. 7, can be further in the second shared capacitive region 214B, the second auxiliary electrode 290B is set up in the second capacitance electrode 280B below at the place of stacking of multi-layer conductive, and the formation method of the second auxiliary electrode 290B and the aforesaid first auxiliary electrode 290A are similar, and promptly it can be same rete with the grid G of the second active member 260B.In the operation of reality, the second auxiliary electrode 290B and the first auxiliary electrode 290A are electrically connected on the shared distribution 240, therefore then constitute one second auxiliary capacitor C2 ' between the second auxiliary electrode 290B, second 284B of extension electrode portion and the gate insulation layer between the two 236, thus, the second auxiliary capacitor C2 ' can further promote the capacitance of the 4th extension capacitor C 4.In gross, in the present embodiment, the integral capacitor value of the storage capacitors of the second pixel cell 250B is the second storage capacitors C2, the 4th summation of extending capacitor C 4, the second auxiliary capacitor C2 ' and the 6th storage capacitors C6.It should be noted that in the present embodiment the second auxiliary electrode 290B more extends to second capacitance electrode portion 282B below from second 284B of extension electrode portion, so can further increase the storage capacitors of the second pixel cell 250B integral body.
In sum, dot structure utilization of the present invention is formed at the storage capacitors of two sub-pixel unit on the same area with stacking, therefore dot structure of the present invention can utilize limited arrangement space fully, promote the storage capacitors amount of storage capacitors unit area, thus, can dwindle the shared area of reservior capacitor, and then increase the aperture opening ratio of dot structure.
Though the present invention discloses as above with embodiment; right its is not in order to limit the present invention; have in the technical field under any and know the knowledgeable usually; without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is when looking being as the criterion that claim defines.
Claims (12)
1. dot structure, be arranged on the substrate, defining a plurality of pixel regions on described substrate, and each described pixel region has one first sub-pixel area and one second sub-pixel area, described second sub-pixel area has one first shared capacitive region, and described dot structure comprises:
One first sweep trace, one second sweep trace, one first data line and one second data line;
One shared distribution is crossed first sub-pixel area and described second sub-pixel area, and described shared distribution has one first common electrode portion, is arranged at the described first shared capacitive region;
One first pixel cell, comprise one first active member, one first capacitance electrode and one first pixel electrode, wherein said first active member is electrically connected at described first sweep trace and described first data line, described first pixel electrode is positioned at described first sub-pixel area, electrically connect described first active member, described first capacitance electrode is disposed at the below of described shared distribution, electrically connects described first active member, and described first capacitance electrode comprises:
One first capacitance electrode portion, described first pixel electrode is connected with described first active member via described first capacitance electrode portion; And
One first extension electrode portion extends to the described first shared capacitive region from described first capacitance electrode portion, makes described first extension electrode portion and the described first common electrode portion overlap and constitutes one first extension electric capacity;
One second pixel cell, comprise one second active member and one second pixel electrode, wherein said second active member is electrically connected at described second sweep trace and described second data line, described second pixel electrode is positioned at described second sub-pixel area, and electrically connect with described second active member, described second pixel electrode and the described first common electrode portion overlap and constitute one second storage capacitors, and described second storage capacitors is arranged in the described first shared capacitive region of described second sub-pixel area with the described first extension electric capacity with stacking.
2. dot structure as claimed in claim 1, it is characterized in that, described first capacitance electrode portion is arranged between described first sub-pixel area and described second sub-pixel area, and constitutes one the 3rd storage capacitors of described first pixel cell between described first capacitance electrode portion and the described shared distribution.
3. dot structure as claimed in claim 1 is characterized in that, in the described first shared capacitive region, the described first common electrode portion is positioned between described second pixel electrode and the described first extension electrode portion.
4. dot structure as claimed in claim 1, it is characterized in that, described dot structure more comprises one first auxiliary electrode, electrically connect described common distribution, be arranged in the described first shared capacitive region, and be positioned at described first capacitance electrode below, constitute one first auxiliary capacitor between described first auxiliary electrode and the described first extension electrode portion.
5. dot structure as claimed in claim 1, it is characterized in that, described dot structure more comprises one second shared capacitive region, be arranged in described first sub-pixel area, described shared distribution has second a common electrode portion that extends to the described second shared capacitive region, wherein said second pixel cell has one second capacitance electrode, and described second capacitance electrode and described first capacitance electrode be same rete, and wherein said second capacitance electrode comprises:
One second capacitance electrode portion, described second pixel electrode is connected with described second active member via described second capacitance electrode portion; And
One second extension electrode portion extends to the described second shared capacitive region from described second capacitance electrode portion, makes that constituting one the 4th between described second extension electrode portion and the described second common electrode portion extends electric capacity.
6. dot structure as claimed in claim 5, it is characterized in that, in the described second shared capacitive region, constitute one the 5th storage capacitors of described first pixel cell between described second common electrode portion and described first pixel electrode, and described the 5th storage capacitors of described first pixel cell stacks on described the 4th extension electric capacity of described second pixel cell.
7. dot structure as claimed in claim 5 is characterized in that, described second capacitance electrode is arranged between described first sub-pixel area and described second sub-pixel area, and constitutes one the 6th storage capacitors between described second capacitance electrode portion and the described shared distribution.
8. dot structure as claimed in claim 5 is characterized in that, in the described second shared capacitive region, the described second common electrode portion is positioned between described first pixel electrode and the described second extension electrode portion.
9. dot structure as claimed in claim 5, it is characterized in that, described dot structure more comprises one second auxiliary electrode, electrically connect described common distribution, be arranged in the described second shared capacitive region, and be positioned at described second capacitance electrode below, constitute one second auxiliary capacitor between described second auxiliary electrode and the described second extension electrode portion.
10. dot structure as claimed in claim 1 is characterized in that, described first active member and described second active member are divided into the diagonal line place of described pixel region.
11. dot structure, be arranged on the substrate, defining a plurality of pixel regions on described substrate, and each described pixel region has one first sub-pixel area and one second sub-pixel area, described second sub-pixel area has one first shared capacitive region, and described dot structure comprises:
One first sweep trace, one second sweep trace, one first data line and one second data line;
One shared distribution is crossed first sub-pixel area and described second sub-pixel area, and extends to the described first shared capacitive region;
One first pixel cell, comprise one first active member, one first pixel electrode and one first capacitance electrode, wherein said first active member is electrically connected at described first sweep trace and described first data line, described first pixel electrode is positioned at described first sub-pixel area, electrically connect described first active member, described first capacitance electrode extends to the described first shared capacitive region, and described first capacitance electrode and described shared distribution overlap in the described first shared capacitive region and constitute one first extension electric capacity;
One second pixel cell, comprise one second active member and one second pixel electrode, wherein said second active member is electrically connected at described second sweep trace and described second data line, described second pixel electrode is positioned at described second sub-pixel area, and electrically connect with described second active member, described second pixel electrode and described shared distribution overlap in the described first shared capacitive region and constitute one second storage capacitors, and described first described second storage capacitors of extending electric capacity and described second pixel cell of described first pixel cell is arranged in the described first shared capacitive region of described second sub-pixel area with stacking.
12. dot structure as claimed in claim 11 is characterized in that, described first active member and described second active member are divided into the diagonal line place of described pixel region.
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| CN2009102495900A CN101738804B (en) | 2009-12-30 | 2009-12-30 | Pixel structure |
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| CN2009102495900A CN101738804B (en) | 2009-12-30 | 2009-12-30 | Pixel structure |
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| CN101738804B true CN101738804B (en) | 2011-10-05 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102608816A (en) * | 2012-03-26 | 2012-07-25 | 深圳市华星光电技术有限公司 | Liquid crystal display (LCD) panel and manufacture method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102096254B (en) * | 2010-11-04 | 2012-08-29 | 华映视讯（吴江）有限公司 | Liquid crystal display |
| TWI457674B (en) * | 2011-04-13 | 2014-10-21 | Au Optronics Corp | Pixel array, pixel structure, and driving method of pixel structure |
| CN104932163B (en) * | 2015-07-03 | 2019-03-19 | 厦门天马微电子有限公司 | Array substrate, display panel and display device |
| CN105242469A (en) * | 2015-11-02 | 2016-01-13 | 深圳市华星光电技术有限公司 | Responsibility sharing capacitor, pixel with same and array substrate |
| CN109613777B (en) * | 2019-01-30 | 2021-06-04 | 惠科股份有限公司 | Display panel and display device |
| CN110416278B (en) * | 2019-08-06 | 2022-09-27 | 京东方科技集团股份有限公司 | Display substrate, preparation method thereof and display device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102608816A (en) * | 2012-03-26 | 2012-07-25 | 深圳市华星光电技术有限公司 | Liquid crystal display (LCD) panel and manufacture method thereof |
| CN102608816B (en) * | 2012-03-26 | 2014-07-16 | 深圳市华星光电技术有限公司 | Liquid crystal display (LCD) panel and manufacture method thereof |
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