CN101733536A - Technology for improving welding strength of PV ribbon by plating Ni/V layer via mask - Google Patents
Technology for improving welding strength of PV ribbon by plating Ni/V layer via mask Download PDFInfo
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- CN101733536A CN101733536A CN200910236853A CN200910236853A CN101733536A CN 101733536 A CN101733536 A CN 101733536A CN 200910236853 A CN200910236853 A CN 200910236853A CN 200910236853 A CN200910236853 A CN 200910236853A CN 101733536 A CN101733536 A CN 101733536A
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- laminate film
- ribbon
- film battery
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- zinc
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Abstract
The invention discloses a technology for improving welding strength of PV ribbon by plating an Ni/V layer via a mask, comprising the following steps: before an Ni/V membrane is plated, a layer of mask plate covers the position to be welded with the PV ribbon on a thin film a-Si/mu c-Si tandem solar cell to enable the covered position not to be plated by the Ni/V metal membrane, and the mask plate is removed to enable the position to be welded with the PV ribbon to retain an Ag metal membrane. The invention has the advantages that compared with the conventional PVD coating film, the Ag metal membrane is exposed from the position to be welded with the PV ribbon; Ag has better metallic conductivity and is not easy to generate an oxide layer under high temperature; the outer surface tin-plating layer of he PV ribbon also contains the Ag component; and with the help of flux, the Ag metal membrane is easy to be welded firmly with the PV ribbon and has better conductivity.
Description
Technical field
The present invention relates to PVD (Physical VaporDeposition, the physical vapour deposition (PVD)) coating process of amorphous microcrystalline laminate film battery, particularly a kind ofly improve the technology that amorphous microcrystalline laminate film battery tin-coated copper tape welding connects intensity.
Background technology
At present; the back electrode of amorphous microcrystalline hull cell plate adopts TCO (transparentconductiveoxide; transparent conductive oxide) adds the metallic diaphragm structure that Ag (silver) adds Ni (nickel)/V (vanadium); this structure only needs a PVD to realize, also need not in the coating process to pause, and mixing V in the Ni metal film can deoxygenation; help the welding of Ni metal film and zinc-plated copper strips; simultaneously, Ni also is the good metal of corrosion resistance, can effectively protect the interior metal rete.
But this kind method; when on the metal level of hull cell plate, welding with zinc-plated copper strips; the weld strength of finding Ni/V layer and zinc-plated copper strips is firm inadequately; this is when adopting the method for PVD to plate the back electrode metal film of cell panel because of amorphous microcrystalline laminate film battery; last layer of metal film adopts the Ni/V target; and rete is thinner; though the Ni/V film can effectively be protected inner Ag rete; but when adopting the method for spot welding that the Ni/V metallic diaphragm is welded with zinc-plated copper strips, the peel strength of solder joint is not enough.
Summary of the invention
The objective of the invention is to overcome weak point of the prior art, provide a kind of and new can improve the technology that amorphous microcrystalline laminate film battery tin-coated copper tape welding connects intensity.
To achieve these goals, the present invention is achieved in that
The technological process that a kind of mask plating Ni/V layer improves the weld strength of zinc-plated copper strips is:
The first step: in PVD equipment, plate the Ag rete for amorphous microcrystalline laminate film battery surface through laser scribing;
Second step: the metal rectangular bar that the front was plated the Ni film covers the zone that zinc-plated copper strips need be welded in amorphous microcrystalline laminate film battery both sides, forms mask regions;
The 3rd step: the amorphous microcrystalline laminate film battery that will cover the metal rectangular bar is once more put into PVD equipment plating Ni/V rete, takes out and has plated Ni/V rete amorphous microcrystalline laminate film battery, removes the metal rectangular bar on the amorphous microcrystalline laminate film battery;
The 4th step: adopt the method for spot welding that the Ag diaphragm area that exposes on the amorphous microcrystalline laminate film battery is welded zinc-plated copper strips.
A kind of mask plating Ni/V layer of the present invention improves the technology of the weld strength of zinc-plated copper strips, it is characterized in that the size of described metal rectangular bar is big or small consistent with the position that needs the zinc-plated copper strips of weldering.
The advantage of technology that mask of the present invention plating Ni/V layer improves the weld strength of zinc-plated copper strips is: compare with conventional PVD plated film, make and expose the Ag metal film on the position that to weld zinc-plated copper strips, the Ag metallic conductivity is better, also be difficult for forming oxide layer under the high temperature, and the outer surface of zinc-plated copper strips is coated with and contains the Ag composition in the tin layer, under the help of scaling powder, the Ag metal film is easier to be connect firmly with the tin-coated copper tape welding, and electric conductivity is more excellent.
Description of drawings
Fig. 1 amorphous microcrystalline laminate film battery covers the floor map of metal rectangular bar.
The specific embodiment
As shown in Figure 1, after amorphous microcrystalline laminate film battery is rule by laser scribe process, in amorphous microcrystalline laminate film battery both sides one bar insulation line is arranged respectively, the insulated wire branch of both sides is clipped near inboard article one laser scribing zone and is metal rectangular bar mask regions.
The project implementation process is:
The first step: in PVD equipment, plate the Ag rete for amorphous microcrystalline laminate film battery surface through laser scribing;
Second step: the metal rectangular bar that the Ni film was plated in two fronts cover respectively insulated wire that amorphous microcrystalline laminate film battery forms after by laser scribing with near inboard article one laser scribing zone, metal rectangular bar mask regions as shown in Figure 1;
The 3rd step: the amorphous microcrystalline laminate film battery that will cover the metal rectangular bar is once more put into PVD equipment plating Ni/V rete, takes out and has plated Ni/V rete amorphous microcrystalline laminate film battery, removes the metal rectangular bar on the amorphous microcrystalline laminate film battery;
The 4th step: adopt the method for spot welding that the Ag diaphragm area that exposes on the amorphous microcrystalline laminate film battery is welded zinc-plated copper strips.
Claims (2)
1. a mask plates the technology that the Ni/V layer improves the weld strength of zinc-plated copper strips, and its flow process spy is being:
The first step: in PVD equipment, plate the Ag rete for amorphous microcrystalline laminate film battery surface through laser scribing;
Second step: the metal rectangular bar that the front was plated the Ni film covers the zone that zinc-plated copper strips need be welded in amorphous microcrystalline laminate film battery both sides, forms mask regions;
The 3rd step: the amorphous microcrystalline laminate film battery that will cover the metal rectangular bar is once more put into PVD equipment plating Ni/V rete, takes out and has plated Ni/V rete amorphous microcrystalline laminate film battery, removes the metal rectangular bar on the amorphous microcrystalline laminate film battery;
The 4th step: adopt the method for spot welding that the Ag diaphragm area that exposes on the amorphous microcrystalline laminate film battery is welded zinc-plated copper strips.
2. a kind of mask plating Ni/V layer as claimed in claim 1 improves the technology of the weld strength of zinc-plated copper strips, it is characterized in that, the size of described metal rectangular bar is big or small consistent with the position that needs weldering tin-coated copper Bands.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009102368534A CN101733536B (en) | 2009-11-04 | 2009-11-04 | Technology for improving welding strength of PV ribbon by plating Ni/V layer via mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009102368534A CN101733536B (en) | 2009-11-04 | 2009-11-04 | Technology for improving welding strength of PV ribbon by plating Ni/V layer via mask |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101733536A true CN101733536A (en) | 2010-06-16 |
| CN101733536B CN101733536B (en) | 2011-12-28 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009102368534A Active CN101733536B (en) | 2009-11-04 | 2009-11-04 | Technology for improving welding strength of PV ribbon by plating Ni/V layer via mask |
Country Status (1)
| Country | Link |
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| CN (1) | CN101733536B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10861624B2 (en) | 2014-07-25 | 2020-12-08 | Epcos Ag | Sensor element, sensor arrangement, and method for manufacturing a sensor element |
| US11346726B2 (en) | 2014-07-25 | 2022-05-31 | Epcos Ag | Sensor element, sensor arrangement, and method for manufacturing a sensor element and a sensor arrangement |
-
2009
- 2009-11-04 CN CN2009102368534A patent/CN101733536B/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10861624B2 (en) | 2014-07-25 | 2020-12-08 | Epcos Ag | Sensor element, sensor arrangement, and method for manufacturing a sensor element |
| US11346726B2 (en) | 2014-07-25 | 2022-05-31 | Epcos Ag | Sensor element, sensor arrangement, and method for manufacturing a sensor element and a sensor arrangement |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101733536B (en) | 2011-12-28 |
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