CN101728452A - Single-diffusion manufacturing method of solar battery with differential doping - Google Patents
Single-diffusion manufacturing method of solar battery with differential doping Download PDFInfo
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- CN101728452A CN101728452A CN200810167661A CN200810167661A CN101728452A CN 101728452 A CN101728452 A CN 101728452A CN 200810167661 A CN200810167661 A CN 200810167661A CN 200810167661 A CN200810167661 A CN 200810167661A CN 101728452 A CN101728452 A CN 101728452A
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Abstract
The invention relates to a single-diffusion method for manufacturing a solar battery with differential doping. The method comprises the following steps: firstly providing a substrate and forming a doping density control layer thereon, wherein the doping density control layer at least comprises a plurality of openings formed therein; secondly, performing the doping process, so the substrate which is positioned below the doping density control layer forms a heavily doped region and other parts of the substrate form a soft doped region.
Description
Technical field
The present invention relates to a kind of manufacture method of solar cell, particularly about a kind of single-diffusion manufacturing method with solar cell of differential doping.
Background technology
Because also day by day lifting of being showing improvement or progress day by day of science and technology, the efficient of solar cell and popularity rate.Its design of solar cell in being extensive use of now is to have a kind of p/n to connect face and form near the front surface (receiving the surface of light), and produces electron stream when battery absorbs luminous energy.Common common battery design two sides before and after it form electrode respectively.Then, these solar cells are electrically connected mutually to increase voltage with series system again.
Therefore, traditional solar cell adopts the substrate of p type, and then utilizes the processing of elevated temperature heat diffusion, makes on the substrate of p type and forms the very thin n N-type semiconductor N of one deck.Before carrying out diffusion process, the surface can be made tissue (Texturing) structure of roughening, and add anti-reflecting layer, to reduce the reflection of light amount.Then, carry out the wire mark program, with the wafer that completes, silver (Ag) glue and aluminium (Al) glue in the coating, with a wire mark machine with the two sides of a kind of default graphic printing at wafer.Then, carry out the co-sintered program,, pass through high temperature sintering furnace jointly being printed with the wafer of elargol and aluminium glue, make elargol and aluminium glue can be respectively produce eutectic structure, and therefore have certain ohmic contact (ohmic contact) with wafer with the corresponding surface of wafer.So, just can pick out conductive electrode, to finish a simple solar cell panel on the surface of wafer.
Yet the zone forming conductive electrode in order to reduce contact resistance, generally speaking, often need have higher doping content.Yet in order to improve short wavelength's frequency response, the concentration of doping just must be restricted in the zone that forms emitter-base bandgap grading (emitter).How effectively balance or select the doping content in two zones will obviously influence the conversion efficiency of solar cell.
Summary of the invention
In above-mentioned background of invention, owing to form the zone and the regional required doping content that forms emitter-base bandgap grading and inequality of electrode in the solar cell.How can control the doping content in two zones effectively, the efficient of solar cell will be improved, and the popularity rate of solar cell is promoted.
Technical problem to be solved by this invention is to provide a kind of single-diffusion manufacturing method to have the solar cell of differential doping with manufacturing, not only can form higher doping content at electrode zone, and can form lower doping content at emitter region, make the efficient of solar cell more promote, and, can reduce the manufacturing cost of solar cell effectively owing to only need utilize the single diffusion process.
To achieve these goals, the invention provides a kind of single-diffusion manufacturing method, comprise the following step, a base material at first is provided, and form a doping content key-course thereon with solar cell of differential doping.And comprising a plurality of openings at least, the doping content key-course is formed at wherein.The base material that then mixes makes to form the base material of below of these openings of being positioned at the doping content key-course heavily doped region, and make other zone of base material form light doping section.
Single-diffusion manufacturing method with solar cell of differential doping of the present invention then also removes the doping content key-course and forms an anti-reflecting layer on this base material.Then, the metal-to-metal adhesive that forms a patterning again is on anti-reflecting layer, and heating of metal glue, makes it form the metal electrode of a solar cell.
Above-mentioned doping preferably is that a phosphonium ion mixes, and the sheet resistor of the heavily doped region on the base material after mixing preferable be about 10-50Ohm/sq., and the sheet resistor of light doping section preferable approximately greater than 50Ohm/sq..Preferable, this solar cell has p type base material and n type ion doped region.In addition, the thickness of doping content key-course is preferable is about 5-100nm, more preferably is about 10-50nm, and that best is 15-40nm.
Therefore, the single-diffusion manufacturing method with solar cell of differential doping of the present invention only needs single time doping process, can form required lightly doped region and heavily doped region on solar cell base.So the present invention can form the doped layer of high concentration below the required electrode of solar cell, reduce contact resistance effectively.Can also form the doped layer of low concentration at the emitter region of solar cell, improve the frequency response of solar cell effectively the short wavelength.Therefore, the single-diffusion manufacturing method with solar cell of differential doping of the present invention can improve the open circuit voltage (Voc) and short circuit current (Isc) of solar cell effectively.
Description of drawings
Figure 1A-1E is the process flow diagram of a preferred embodiment of the single-diffusion manufacturing method of the solar cell with differential doping of the present invention.
[primary clustering symbol description]
100: base material 140: heavily doped region
110: doping content key-course 150: doping process
112: opening 160: anti-reflecting layer
130: light doping section
Embodiment
Single-diffusion manufacturing method with solar cell of differential doping of the present invention, not only can form higher doping content at the electrode zone of solar cell, and can form lower doping content at emitter region, make the efficient of solar cell more promote.Below will clearly demonstrate spirit of the present invention with accompanying drawing and detailed description, as having the personnel of common knowledge in the affiliated technical field, after understanding preferred embodiment of the present invention, when can be by the technology of teachings of the present invention, change and modification, it does not break away from spirit of the present invention and scope.
Figure 1A-1E is the process flow diagram of a preferred embodiment of the single-diffusion manufacturing method of the solar cell with differential doping of the present invention.At first consult Figure 1A, as shown in FIG., the solar cell with differential doping of the present invention is to form a doping content key-course 110 at a base material 100, to control the ion concentration of follow-up doping process.These doping content key-course 110 main purposes are to make opening 112 places on it, when mixing, can not be intercepted and produce the bigger doped region of concentration.And at non-opening part, that is be covered in doping content key-course 110 on the base material 100, but the non-base material 100 that is positioned at opening 112 belows, then will be because of the obstruct of doping content key-course 110, make that the ion concentration of mixing is lower, right doping content key-course 110 and the not exclusively doping of barrier ion will be so it will make the base material 100 of this part have lower ion doping concentration.
Consult Fig. 1 C, behind doping process 150, on the base material 100 formation is positioned at the heavily doped region 140 of opening 112 belows and adjacent domain, and the non-light doping section 130 that is positioned at opening 112 belows and adjacent domain.And then with 110 removals of doping content key-course, and form anti-reflecting layer 160, consult Fig. 1 D-1E.At this moment, base material 100 can constitute the preliminary structure of the required panel of solar cell, its recycling follow-up metallic conduction offset printing dataller skill, for example be silver conductive adhesive or aluminium conducting resinl typography, with heating process, to form the electrode of solar cell, can finish easy solar cell panel.
Wherein, aforesaid doping process 150 for example be the doping of carrying out phosphonium ion (phosphorus ion), and base material 100 is preferably p type base material, and utilizes the elevated temperature heat DIFFUSION TREATMENT, or method such as ion implantation, forms the n type semiconductor layer on the surface of base material 100.In addition, the doping content of light doping section 130 is low with respect to the doping content of heavily doped region 140.Generally speaking, heavily doped region 140 preferably can be measured and must be about 10-50Ohm/sq. by its sheet resistor.Light doping section 130 preferably then has sheet resistor approximately greater than 50Ohm/sq., but is not limited thereto.When the doping content of the light doping section 130 of this case with respect to the doping content of heavily doped region 140 when low, can after subsequent technique forms solar cell, produce preferable conversion efficiency and lower contact resistance.
In addition, doping content key-course 110 can be the material that any dopant ion that is enough to make part penetrates, and for example is that silicon nitride (silicon nitride) or silica materials such as (silicon oxide) form.Generally speaking, doping content key-course 110 is preferably and is controlled between the 5-100nm, more preferably is to be controlled between the 10-50nm, then is to be controlled between the 15-40nm best.Therefore, doping content key-course 110 can form heavily doped region 140 in the position of opening 112 when carrying out ion doping, with at follow-up processing procedure, form the required electrode of solar cell thereon, and reduce the contact resistance between electrode and the heavily doped region 140.And, then can form light doping section 130 in the position that other doping content key-course 110 coats, with the required emitter region of formation solar cell, and then improve the frequency response of solar cell effectively to the short wavelength.
Wherein, doping content key-course 110 can utilize typography with the transfer printing of etching glue thereon, adds thermal etching glue then, makes doping content key-course 110 form required opening 112.In addition, doping content key-course 110 can also utilize general photolithography technology to carry out required patterning.
Metallic conduction glue in addition, for example being elargol or aluminium glue, generally speaking, is to be coated on the anti-reflecting layer 160, and utilize high-sintering process to make its heavily doped region that passes anti-reflecting layer 160 and below 140 form eutectic structures, to form the required metal electrode of solar cell.
By above-mentioned explanation as can be known, single-diffusion manufacturing method with solar cell of differential doping of the present invention only needs single time doping process, can below the required electrode of solar cell, form the doped layer of high concentration, reduce contact resistance effectively, and form the doped layer of low concentration simultaneously at emitter region, improve the frequency response of solar cell effectively the short wavelength.Therefore, the single-diffusion manufacturing method with solar cell of differential doping of the present invention, open circuit voltage (Voc) that can improve solar cell effectively and short circuit current (Isc).
Understand as having common knowledge personnel in the affiliated technical field, the above only is preferred embodiment of the present invention, is not in order to limit claim protection range of the present invention.All other do not break away from the equivalence of being finished under the disclosed spirit and changes or modification, all should be included in the claim protection range of the present invention.
Claims (10)
1. the single-diffusion manufacturing method with solar cell of differential doping is characterized in that, comprises at least:
One base material is provided;
Form a doping content key-course on this base material, this doping content key-course comprises a plurality of openings at least and is formed at wherein; And
This base material that mixes, the below that makes this base material be positioned at these a plurality of openings of this doping content key-course forms heavily doped region, and makes other zone of this base material form light doping section.
2. the single-diffusion manufacturing method with solar cell of differential doping according to claim 1 is characterized in that, also comprises:
Remove this doping content key-course; And
Form an anti-reflecting layer on this base material.
3. the single-diffusion manufacturing method with solar cell of differential doping according to claim 2 is characterized in that, also comprises:
The metal-to-metal adhesive that forms a patterning is on this anti-reflecting layer; And
Heat this metal-to-metal adhesive, make it form the metal electrode of a solar cell.
4. the single-diffusion manufacturing method with solar cell of differential doping according to claim 1 is characterized in that, the described phosphonium ion that is doped to mixes.
5. the single-diffusion manufacturing method with solar cell of differential doping according to claim 1 is characterized in that, the sheet resistor of described heavily doped region is 10-50Ohm/sq..
6. the single-diffusion manufacturing method with solar cell of differential doping according to claim 5 is characterized in that the sheet resistor of described light doping section is greater than 50Ohm/sq..
7. the single-diffusion manufacturing method with solar cell of differential doping according to claim 1 is characterized in that, described base material is a p type base material.
8. the single-diffusion manufacturing method with solar cell of differential doping according to claim 7 is characterized in that, the described n type ion doping that is doped to.
9. the single-diffusion manufacturing method with solar cell of differential doping according to claim 1 is characterized in that, the thickness of described doping content key-course is 5-100nm.
10. the single-diffusion manufacturing method with solar cell of differential doping according to claim 1 is characterized in that, the thickness of described doping content key-course is 15-40nm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN200810167661A CN101728452A (en) | 2008-10-20 | 2008-10-20 | Single-diffusion manufacturing method of solar battery with differential doping |
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| CN200810167661A CN101728452A (en) | 2008-10-20 | 2008-10-20 | Single-diffusion manufacturing method of solar battery with differential doping |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102569495A (en) * | 2010-12-17 | 2012-07-11 | 上海凯世通半导体有限公司 | Method for doping solar wafer and doped wafer |
| CN102709378A (en) * | 2012-01-09 | 2012-10-03 | 南安市三晶阳光电力有限公司 | Preparation method of selective emitting electrode crystalline silicon solar battery |
| CN102800716A (en) * | 2012-07-09 | 2012-11-28 | 友达光电股份有限公司 | Solar battery and manufacturing method thereof |
-
2008
- 2008-10-20 CN CN200810167661A patent/CN101728452A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102569495A (en) * | 2010-12-17 | 2012-07-11 | 上海凯世通半导体有限公司 | Method for doping solar wafer and doped wafer |
| CN102569495B (en) * | 2010-12-17 | 2014-03-19 | 上海凯世通半导体有限公司 | Method for doping solar wafer and doped wafer |
| CN102709378A (en) * | 2012-01-09 | 2012-10-03 | 南安市三晶阳光电力有限公司 | Preparation method of selective emitting electrode crystalline silicon solar battery |
| CN102800716A (en) * | 2012-07-09 | 2012-11-28 | 友达光电股份有限公司 | Solar battery and manufacturing method thereof |
| WO2014008678A1 (en) * | 2012-07-09 | 2014-01-16 | 友达光电股份有限公司 | Solar cell and fabricating method thereof |
| TWI476943B (en) * | 2012-07-09 | 2015-03-11 | Au Optronics Corp | Solar cell and method for fabricating the same |
| US8987588B2 (en) | 2012-07-09 | 2015-03-24 | Au Optronics Corp. | Method for fabricating solar cell |
| CN102800716B (en) * | 2012-07-09 | 2015-06-17 | 友达光电股份有限公司 | Solar battery and manufacturing method thereof |
| US9082902B2 (en) | 2012-07-09 | 2015-07-14 | Au Optronics Corp. | Solar cell |
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Open date: 20100609 |