CN101728375B - Packaging structure for interdigital back electrode monocrystalline silicon solar cell in condensation application - Google Patents
Packaging structure for interdigital back electrode monocrystalline silicon solar cell in condensation application Download PDFInfo
- Publication number
- CN101728375B CN101728375B CN2008100464053A CN200810046405A CN101728375B CN 101728375 B CN101728375 B CN 101728375B CN 2008100464053 A CN2008100464053 A CN 2008100464053A CN 200810046405 A CN200810046405 A CN 200810046405A CN 101728375 B CN101728375 B CN 101728375B
- Authority
- CN
- China
- Prior art keywords
- solar cell
- circuit
- back electrode
- layer
- monocrystalline silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The invention provides a packaging structure for an interdigital back electrode monocrystalline silicon solar cell in condensation application, which comprises an aluminum base plate, a pressure-resistant heat-conducting insulating layer, a circuit substrate, a solar cell and glass, wherein the pressure-resistant heat-conducting insulating layer is an aluminum nitride layer which is uniformly attached on the aluminum base plate; the circuit substrate is a metallic copper layer electroplated on the pressure-resistant heat-conducting insulating layer, the circuit of the circuit substrate is arranged in a mutually disconnected interdigital antisymmetric mode, and bypass diodes are welded at the head and the tail of the circuit; the circuit of the back electrode of the solar cell and the circuit of the metallic copper layer are consistent and are correspondingly superposed and welded into a whole; and the glass is bound on the uppermost layer by highly transparent silicone gel. The packaging structure for the interdigital back electrode monocrystalline silicon solar cell in the condensation application of the invention has excellent insulation and heat dispersion performances and further overcomes the problem of photovoltaic application of condensation.
Description
Technical field
The present invention relates to the encapsulating structure of a kind of interdigital back electrode monocrystalline silicon solar cell in concentration applications, particularly a kind of insulation property and heat dispersion are good, are applicable to the encapsulating structure of concentrating photovoltaic assembly.
Background technology
Along with the global energy situation is increasingly serious, solar energy is as extremely people's favor of clean energy resource, but the biggest obstacle that Application of Solar Energy is promoted is that the cost of solar cell piece is too high, lacking of market competition ability.The cost that how to reduce Application of Solar Energy becomes the focus of solar energy research.Wherein, condensation photovoltaic is a kind of approach that reduces the Application of Solar Energy cost.It is to utilize concentrator that sunlight is converged to be radiated on the solar cell afterwards again, has so just reduced the consumption of solar cell, has reduced cost.The condensation photovoltaic key technologies for application is to solve the insulation of concentrating photovoltaic assembly, withstand voltage and heat dissipation problem.
Through retrieval, the domestic patent document that does not have concentrating photovoltaic assembly to be correlated with as yet.
Summary of the invention
The purpose of this invention is to provide the encapsulating structure of a kind of interdigital back electrode monocrystalline silicon solar cell in concentration applications.It has good insulation performance and heat dispersion, is applicable to concentrating photovoltaic assembly.
The object of the invention is realized through following technical scheme: the encapsulating structure of this interdigital back electrode monocrystalline silicon solar cell in concentration applications is followed successively by aluminium base from bottom to up, dielectric voltage withstand heat-conducting layer, circuit substrate, solar cell and glass.
The dielectric voltage withstand heat-conducting layer is that one deck is evenly attached to the aln layer on the aluminium base; The insulation and the heat dispersion of aluminium nitride are good; The heat that is produced in the time of can solar cell piece being worked transmits fast and distributes; Make solar cell keep high conversion efficiency, reach the withstand voltage requirement of photovoltaic module simultaneously, guarantee safety problem.
Circuit substrate is the metal copper layer of electroplating on the dielectric voltage withstand heat-conducting layer, and its circuit is arranged by interdigitate and mutual disjunct antisymmetry form, is welded with bypass diode from beginning to end at it.The circuit of the back electrode of solar cell is consistent with the circuit of metal copper layer, and both corresponding coincidences are integrally welded.The thermal conductivity of copper is higher, and resistance is less, is good conductor.Bypass diode prevents " hot spot effect ".
Glass, is prevented that operating circuit is oxidized and pollutes in the superiors by the transparent silicon gel cementing of height, prolongs its working life.
Description of drawings
Fig. 1 is the structural representation of embodiments of the invention.
Among the figure, 1. aluminium base, 2. dielectric voltage withstand heat-conducting layer, 3. circuit substrate, 4. solar cell, 5. glass, 6. silicon gel layer, 7. bypass diode
Embodiment
With reference to figure 1, the encapsulating structure of one of embodiments of the invention is followed successively by aluminium base 1 from bottom to up, dielectric voltage withstand heat-conducting layer 2, circuit substrate 3, solar cell 4 and glass 5.Dielectric voltage withstand heat-conducting layer 2 is that one deck is evenly attached to the aln layer on the aluminium base 1; The insulation and the heat dispersion of aluminium nitride are good; The heat that is produced in the time of can solar cell 4 being worked transmits fast and distributes; Make solar cell 4 keep high conversion efficiency, reach the withstand voltage requirement of photovoltaic module simultaneously, guarantee safety problem.Circuit substrate 3 is the metal copper layer of electroplating on dielectric voltage withstand heat-conducting layer 2, and its circuit is arranged by interdigitate and mutual disjunct antisymmetry form, is welded with bypass diode 7 from beginning to end at it.The circuit of the back electrode of solar cell 4 is consistent with the circuit of metal copper layer, and both corresponding coincidences are integrally welded.The thermal conductivity of copper is higher, and resistance is less, is good conductor.Bypass diode 7 prevents " hot spot effect ".Glass 5 is bonded in the superiors by the transparent silicon gel 6 of height, prevents the oxidized and pollution of operating circuit, prolongs its working life.
Dielectric voltage withstand heat-conducting layer 2 can adopt aluminium nitride, alundum (Al or other heat-conducting insulation material.
The thickness of aluminium base 1 is 1.0～3mm; The thickness of dielectric voltage withstand heat-conducting layer 2 is 0.1～0.2mm; The thickness of circuit substrate 3 is 0.03～0.1mm; The thickness of solar cell 4 is 0.2mm; The thickness of glass 5 is 0.1～3.2mm; The thickness of silicon gel layer 6 is 0.05～0.2mm.
Though the present invention discloses as above with preferred embodiment, be not in order to limiting the present invention, anyly be familiar with this art, various changes and the retouching in spirit that does not break away from the present invention and scope, done also belong to the present invention's scope.Therefore, the claim person of defining that after looking, attaches of the present invention's protection range is as the criterion.
Claims (3)
1. the encapsulating structure of an interdigital back electrode monocrystalline silicon solar cell in concentration applications, it is characterized in that: described encapsulating structure is followed successively by aluminium base from bottom to up, dielectric voltage withstand heat-conducting layer, circuit substrate, solar cell and glass; Described dielectric voltage withstand heat-conducting layer is evenly attached to the aln layer on the aluminium base; Described circuit substrate is for electroplating the metal copper layer on the dielectric voltage withstand heat-conducting layer, and its circuit is to arrange by interdigitate and mutual disjunct antisymmetry form, is welded with bypass diode from beginning to end at it; The circuit of the back electrode of described solar cell is consistent with the circuit of described metal copper layer, and both corresponding coincidences are integrally welded; Described glass by the transparent silicon gel cementing of height in the superiors.
2. the encapsulating structure of interdigital back electrode monocrystalline silicon solar cell according to claim 1 in concentration applications, it is characterized in that: described aluminium base also can be replaced by copper base; Described dielectric voltage withstand heat-conducting layer can adopt aluminium nitride or alundum (Al.
3. the encapsulating structure of interdigital back electrode monocrystalline silicon solar cell according to claim 1 and 2 in concentration applications is characterized in that: the thickness of described aluminium base is 1.0～3mm; The thickness of described dielectric voltage withstand heat-conducting layer is 0.1～0.2mm; The thickness of described circuit substrate is 0.03～0.1mm; The thickness of described solar cell is 0.2mm; The thickness of described glass is 0.1～3.2mm; The thickness of described silicon gel layer is 0.05～0.2mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008100464053A CN101728375B (en) | 2008-10-29 | 2008-10-29 | Packaging structure for interdigital back electrode monocrystalline silicon solar cell in condensation application |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008100464053A CN101728375B (en) | 2008-10-29 | 2008-10-29 | Packaging structure for interdigital back electrode monocrystalline silicon solar cell in condensation application |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101728375A CN101728375A (en) | 2010-06-09 |
| CN101728375B true CN101728375B (en) | 2012-02-01 |
Family
ID=42448981
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008100464053A Expired - Fee Related CN101728375B (en) | 2008-10-29 | 2008-10-29 | Packaging structure for interdigital back electrode monocrystalline silicon solar cell in condensation application |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101728375B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102544170A (en) * | 2010-12-24 | 2012-07-04 | 阿特斯(中国)投资有限公司 | Temperature adjusting device of photovoltaic assembly |
| CN106653899B (en) * | 2016-08-31 | 2018-12-11 | 王艳红 | A kind of encapsulating structure of the photovoltaic cell for hot environment |
-
2008
- 2008-10-29 CN CN2008100464053A patent/CN101728375B/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN101728375A (en) | 2010-06-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8933324B2 (en) | Thermally mounting electronics to a photovoltaic panel | |
| CN103180967A (en) | Back sheet of a solar cell module for photovoltaic power generation | |
| CN202094162U (en) | Backboard heat radiation structure of solar cell panel | |
| CN204696135U (en) | Based on the aluminium section bar BIPV component with heat dissipation channel | |
| CN102244487A (en) | Hybrid power generation system and using method thereof | |
| CN101866972A (en) | Integral component of solar cell and radiator | |
| CN202473968U (en) | Photovoltaic cell backplane and photovoltaic cell using the same | |
| CN101728375B (en) | Packaging structure for interdigital back electrode monocrystalline silicon solar cell in condensation application | |
| US20160013343A1 (en) | Integrated photovoltaic and thermal module (pvt) | |
| CN102738281A (en) | Solar battery module protection circuit, solar junction box and power generation system | |
| CN201549523U (en) | Radiating structure for light-focusing photovoltaic module | |
| CN211654832U (en) | Weather-proof efficient solar module | |
| CN102487093A (en) | Solar cell backboard and solar cell with solar cell backboard | |
| KR101575177B1 (en) | Solar cell module with internal heat-transfer element | |
| CN101944547A (en) | High-power concentrating solar cell receiver | |
| CN207648670U (en) | LED lamp based on photovoltaic glass | |
| CN202259251U (en) | Insulating heat radiation electronic assembly | |
| CN106328744A (en) | Solar cell back plate with high heat dissipation performance | |
| CN201733249U (en) | Low-power light-condensing photovoltaic component | |
| CN101882641B (en) | Low-concentration photovoltaic component | |
| US20120222739A1 (en) | Photovoltaic Apparatus | |
| CN101546753A (en) | Double-purpose light-gathering solar cell component for electricity generation and LED illumination | |
| CN202750327U (en) | Ceramic circuit board of solar concentrating photovoltaic photoelectric conversion receiver | |
| CN201425938Y (en) | Improved big power rectifier bridge device | |
| CN202652691U (en) | Enhanced high current resistant concentrating photovoltaic photoelectric-conversion receiver ceramic circuit board |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: SICHUAN ZSUN SOLAR ENERGY DEVELOPMENT CO.,LTD. Free format text: FORMER OWNER: CHENGDU ZHONGSHUN TECHNOLOGY DEVELOPMENT CO., LTD. Effective date: 20130807 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20130807 Address after: 610065, Sichuan Chengdu Shuangliu County Economic Development Zone, Southwest Airlines Industrial Development Zone Three Patentee after: Sichuan Zsun Solar Energy Development Co.,Ltd. Address before: 610065 Sichuan city of Chengdu province high tech Zone Guixi Industrial Park Patentee before: Chengdu Zhongshun Technology Development Co., Ltd. |
|
| DD01 | Delivery of document by public notice |
Addressee: Huang Zhong Document name: Notification of Passing Examination on Formalities |
|
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120201 Termination date: 20181029 |