CN101728303A - Method for the preparation of a flexible transducer unit, the flexible transducer unit so prepared and an array containing such flexible transducer units - Google Patents
Method for the preparation of a flexible transducer unit, the flexible transducer unit so prepared and an array containing such flexible transducer units Download PDFInfo
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- CN101728303A CN101728303A CN200910178167A CN200910178167A CN101728303A CN 101728303 A CN101728303 A CN 101728303A CN 200910178167 A CN200910178167 A CN 200910178167A CN 200910178167 A CN200910178167 A CN 200910178167A CN 101728303 A CN101728303 A CN 101728303A
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Abstract
The present invention relates to a method for the preparation of a flexible transducer unit from a wafer containing a plurality of transducer structures comprising a substrate, a metal-oxide layer, at least one mesh structure in said metal-oxide layer and electric wires including at least one first contact pad in said metal-oxide layer. The method includes the steps of: etch the metal-oxide layer to release said mesh; form a sealing layer on the mesh; form a first flexible material layer on the metal-oxide layer; and remove the substantial thickness of the substrate, sufficient to make the transducer structure flexible. Alternatively the first flexible material layer may be formed before the mesh is released. The method may further include the step of forming a second flexible layer in the back side of the wafer. A novel structure of the flexible transducer unit prepared according to the invented method is also disclosed. An array containing a plurality of the flexible transducer units is also disclosed.
Description
Technical field
The invention relates to a kind of preparation method of flexible transducer unit, particularly, prepared a plurality of sensor constructions on this wafer about make the method for flexible transducer unit from wafer.The present invention also discloses a kind of novel structure according to the prepared flexible transducer of said method, and the array that contains this flexible transducer.
Background technology
Detector must be connected with signal control circuit and signal drive circuit on using usually with transducer.Industry is for integrated on same substrate with foregoing circuit and transducer, with the address that reduces parasitic electrically assembly, raising signal noise ratio, the array element of management in large-scale array, complexity and even the cost that reduces interconnection and encapsulation, and reduce size of whole micro-system etc., ardent demand is arranged.In the technology of various integrated sensors and circuit, though be before making this integrated circuit, afterwards or simultaneously integrated, the best course to pursue is to utilize ready-made integrated circuit production line, and the existing material layer that is used for making sensor device, as long as utilize a plurality of post-processing steps to remake processing thereafter, can finish the method for making.This is because above-mentioned technology can be carried out in IC standard factory, and need not the technology that exploitation in addition customizes (customer-design).
Transducer when encapsulation except the traditional device book jacket and electrical wire as the IC standard encapsulation is provided, also must be able to provide the interface of transducer to physical environment, maybe this transducer is kept under given conditions, for example when making inertial sensor, tight air tight housing must be formed, when making pressure sensor, then exposed film or the like must be formed.Therefore, the encapsulation of transducer is comparatively expensive compared with the traditional IC packaging cost.If can do the encapsulation of crystal circle grade (wafer-level) to transducer, can reduce the cost of encapsulation, because can utilizing, this way is similar to the technology of in miniature manufacturing, using, the interface of transducer to physical environment is provided, keeps the book jacket of transducer operating condition, generator with the batch manufacture process, and the electrical equipment lead is provided.This encapsulation technology must can with the device and the micro-system compatibility of transducer.
In addition, in many application scenarios, for example medical science is implanted, the introscope diagnostic tool, or at the device that is used in environment such as bending or soft-surface, and the Intelligence sensor after this encapsulation must possess suitable flexible.
Summary of the invention
The object of the present invention is to provide a kind of preparation method of flexible transducer unit of novelty.
Purpose of the present invention also is to provide a kind of flexible transducer unit that is used for preparing, and can use the method for IC standard preparation process.
Another purpose of the present invention is to provide a kind of flexible transducer unit that is used for preparing, can finish the method for its book jacket and packaging process.
Another purpose of the present invention also is to provide a kind of novel structure of flexible transducer unit.
Another purpose of the present invention also is to provide a kind of and prepares according to IC manufacturing process, the flexible transducer unit of reprocessing and encapsulation.
Another purpose of the present invention also is to provide a kind of formed array of flexible transducer unit of utilizing method preparation of the present invention.
Another purpose of the present invention also is to provide a kind of formed array of flexible transducer unit according to the preparation of IC production process, reprocessing and encapsulation.
The invention provides a kind of method of reprocessing of sensor construction.This sensor construction mainly comprises: substrate; The metal-oxide layer; Be positioned at least one network structure of this metal-oxide layer; And electrical wire, it comprises at least one first contact chip, is positioned at this metal-oxide layer.In the most application scenarios of the present invention, be this most transducer of preparation on a substrate, this substrate can be silicon substrate, particularly SOI (silicon on insulator) substrate.
According to an aspect of the present invention, post-processing approach of the present invention comprises the following steps:
This metal-oxide layer of etching is to discharge (release) this network structure;
On this network structure, form a sealant;
On this metal-oxide layer, form first flexible material layers; And
Remove the suitable thickness of this substrate, it is flexible that this thickness of removing foot has this sensor construction.
In an embodiment of the present invention, this substrate is to remove thickness with engraving method, particularly removes thickness with grinding technics.And in this embodiment, this substrate is in fact all to remove.
According to a further aspect of the invention, this post-processing approach comprises:
On the metal-oxide layer of this sensor construction, form first flexible material layers;
Contain cancellated zone in bare metal-oxide skin(coating);
Etching metal-oxide skin(coating) is to discharge this network structure;
On network structure, form a sealant; And
Remove the suitable thickness of substrate, it is flexible that sensor construction is had.
To aforementioned similar, this substrate can utilize etching, and particularly grinding technics is removed thickness.Simultaneously, this substrate also can in fact all be removed.
After removing this substrate, on exposed metal-oxide layer, also can form second flexible material layers.After forming first flexible material layers, may the contact chip of electrical wire must be exposed.Identical therewith, after forming second flexible material layers, also may second contact chip of this electrical wire must be exposed.
In the present invention, this network structure is the primary structure of transducer, and can be wire netting, particularly the wire netting that makes according to so-called CMOS (Complementary Metal-Oxide-Semiconductor, complementary metal oxide semiconductors (CMOS)) technology.This sensor construction also can be included in the metal-oxide storehouse (metal-oxide stack) for preparing in this metal-oxide layer.When discharging network structure, this metal-oxide storehouse also can discharge simultaneously.The preparation method of this metal-oxide storehouse is the most metal levels that make in the metal-oxide layer that need remove, in this metal-oxide layer, (vias) interlinks with metal vias, and makes the edge of this metal level can expose out after the network structure release steps.
When discharging network structure (and metal-oxide storehouse), can use and come to comprise this cancellated zone in this metal-oxide layer of etching in the network structure region with anisotropic Si oxide etching technique and finish.Can be when the lower floor polysilicon layer in reaching this metal-oxide layer to the anisotropic Si oxide etching of metal-oxide layer, or stop when reaching substrate surface.This etching step can comprise in addition sensor construction is carried out etching with an anisotropic etching with etched combination of first-class tropism, to form undercut (undercut) in substrate.
Can carry out in gas phase (vapor phase) environment cancellated sealing once again, to produce PECVD film or polymer (polymer) film, for example be Teflon film or Parylene film.First and second flexible layers on the material with can be identically on the structure, also can be difference.This polymer is in forming this first and second flexible layers, and is quite suitable.The material that is fit to comprises polyimides (polyimide), Teflon and Parylene.
This sensor construction can engage (bonded) to carrier wafer (carrier wafer) after forming first flexible material layers on the metal-oxide layer.This carrier wafer perhaps after second flexible material layers forms, will give and removing after substrate is in fact all removed.
For removing whole substrates in fact, can use rough etch to carve (course etching) and close etching (fine etching) step at quarter.In rough etch was carved step, substrate was accepted grinding technics, stayed the quite thin substrate of one deck, be generally about 50 μ m thick about, with this this electronic building brick is remained intact.Again the thin-layer silicon substrate retained with the method for Wet-type etching, RIE/ electric paste etching or vapor phase etchant removed thereafter.After the process above-mentioned steps, this transducer can separate.Be made in the formed structure of these a plurality of transducers in first flexible layers (and second flexible layers that may exist), in separating step, be divided into crystal grain.In another embodiment of the present invention, this metal-oxide layer is positioned at the part of the line of cut of reservation, when this sensor construction of preparation, all removes.When forming this first flexible layers, this flexible material fills up this left space of metal-oxide layer of having removed.Therefore, when this wafer of cutting, after die separation, there is no the metal-oxide layer and can be exposed to the outside.
According to the present invention, should comprise with the prepared flexible transducer unit of the inventive method: first flexible layers; The metal-oxide layer is connected in a first surface of this first flexible layers; Electrical wire is connected to first contact chip, and this lead and this first contact chip all are embedded in the metal-oxide layer; One network structure is suspended in the metal-oxide layer; And a sealant, cover this network structure at least.If substrate is not all removed, then this flexible transducer unit can comprise a retention substrate, is connected in second side of this metal-oxide layer.This sensor unit also can comprise one second flexible layers, is linked to this second side of substrate or this metal-oxide layer of this retention.
In this sensor construction, also can provide the metal-oxide storehouse in addition, be suspended in this metal-oxide layer.Each metal level in this metal-oxide storehouse is interlinked by the guide hole in this metal-oxide layer, and outside the edge of this metal level is exposed to.The metal level that this metal-oxide storehouse comprises, the number of plies can from 1 in this metal-oxide layer the sum of institute's metal-containing layer.This sensor construction also can comprise polysilicon layer, and itself and network structure extend in parallel, and keep at a distance.This polysilicon can be used as electrode and uses.
If necessary, first contact chip can expose out from first flexible layers.Also can provide second contact chip.Similar to the former, second contact chip can expose out from second flexible layers.Sealant also can cover first flexible layers.
If flexible transducer unit is produced on the wafer, then an array can be had the sensor unit of above-mentioned feature with batch making.If when making, the metal-oxide layer between between sensor unit is all removed, and this space is full of by first flexible layers subsequently, and the sensor unit that then is positioned on the wafer can be cut apart from first flexible layers.
Other purpose of the present invention and advantage can be by following detailed descriptions, and with reference to graphic and more shape is clear.
Description of drawings
The 1st (a) represents some steps that preparation method first embodiment of the flexible transducer unit according to the present invention is comprised to 1 (c) figure.
The 2nd (a) represents some steps that preparation method second embodiment of the flexible transducer unit according to the present invention is comprised to 2 (c) figure.
The 3rd (a) represents some steps that preparation method the 3rd embodiment of the flexible transducer unit according to the present invention is comprised to 3 (c) figure.
The 4th (a) represents some steps that preparation method the 4th embodiment of the flexible transducer unit according to the present invention is comprised to 4 (c) figure.
The 5th figure represents the sectional view of the sensor construction that preparation method the 5th embodiment of the flexible transducer unit according to the present invention is finished.
The 6th figure represents to finish according to sixth embodiment of the invention, comprises the sectional view of a plurality of sensor constructions.
Embodiment
The present invention discloses method electronic circuit and microsensor is in addition integrated and that encapsulate, and that the integrating device of being finished is had is also flexible/or the tool bio-compatibility.The present invention shows, the packaging technology of integrated circuit technology, sensor process and wafer level can be used with mutually, and can once be finished in IC standard technology.Microsensor can form in the circuit integrated technique and encapsulate.Therefore needn't distinguish or in regular turn, to divide other manufacturing equipment to make this electronic circuit, this microsensor and to encapsulate this sensor unit, as prior art.Method of the present invention can be used for producing the embedded type device, for example diagnoses and monitor that sound imaging device (acousticimaging devices), the airtight oscillator of partial vacuum, the miniature acceleration of human body taken into account gyroscope, pressure sensor, flow and sound transducer or the like.The present invention also can be used to produce the device with bending or soft-surface, or is used in the device of implanting or dressing purposes.
The preparation method of flexible transducer unit of the present invention is the reprocessing about sensor microstructure basically.This processing can be understood as: finish on the SOI wafer after the miniature manufacturing process of integrated circuit, its upper strata silicon layer thickness is between the part of 1 micron (micrometer) is arrived several microns.In the metal-oxide layer, then contain required electronic building brick and sensor construction.These transducers are carried out reprocessing with method of the present invention, to finish its manufacturing process.The present invention prepares flexible transducer unit from the wafer that comprises a plurality of sensor constructions, and this sensor construction comprises: substrate; The metal-oxide layer; At least one network structure is arranged in this metal-oxide layer; And electrical wire, comprise at least one contact chip, be arranged in this metal-oxide layer.
The preparation method of flexible transducer unit of the present invention then comprises: at first, with for example HF base method for chemially etching, discharge this sensor construction and chamber top cover network structure (cavity ceilingmesh).With one or more vapor coating material form chamber top cover, seal this sensor construction and this chamber top cover network structure again thereafter.Flexible for whole device is had, then form polymeric layer in the front of wafer (front side), polyimides (polyimide) for example, Teflon and Parylene etc., but make this transducer region exposed outside.Join wafer to carrier wafer.In an alternative embodiment, this front polymeric layer can form before sensor construction and network structure release., the back side (back-side) silicon substrate with grinding technics removed to relatively thin thickness, be generally about 50 μ m, make this electronic building brick unlikely impaired thereafter.The thin layer silicon layer of this retention is again with Wet-type etching, and RIE/ electric paste etching or vapor phase etchant step are removed.The oxide skin(coating) that is embedded in the thin layer silicon layer promptly is used as etching stopping layer.Thereafter the back side is covered with another polymeric layer, this polymeric layer can be the material identical or different with the front polymeric layer.The symmetric geometry and the compatible material that are formed on the two layers of polymers interlayer are desirable, because this kind structure can be reduced to minimum with the driving component and the suffered stress of transducer of electronic installation.At last, this flexible wafer can be removed joint (de-bonded) before or after it cuts into crystal grain.
It below is detailed description to the some embodiment of the present invention.Must statement, for the explanation of preferred embodiment, purpose just is used for illustration the present invention, must not limit the scope of the invention in order to this.
The 1st (a) represents some steps that preparation method first embodiment of the flexible transducer unit according to the present invention is comprised to 1 (c) figure.
As shown in the figure, in the present embodiment, at first prepare a wafer, wherein contain the structure that comprises transducer.The 1st (a) figure shows the sectional view of this sensor construction.Show among the figure that this sensor construction comprises: silicon substrate (1); Metal-oxide layer (10); Plain conductor (2) is linked to a contact chip (3), and both all are embedded in this metal-oxide layer (10); Wire netting (4) and metal-oxide storehouse (5) expose out by this metal-oxide layer (10); Reach protective layer (6), cover the upper surface of this metal-oxide layer (10), that is the front of this wafer (front side).
Structure shown in the 1st (a) figure is with traditional IC technology; particularly so-called CMOS technology; be produced on the SOI wafer; with photoetching process (photolithography) form this protective layer (6) thereafter; cover the zone except that this wire netting (4) region of this crystal column surface; expose this wire netting (4) with an anisotropic Si oxide etching step again, and by by anisotropic etching and etc. the combination of tropism's silicon etch steps, discharge this metal-oxide storehouse (5)., enter wet type metal etch step, to remove at least one metal sandwich (not shown) thereafter.This metal-oxide storehouse (5) is to be designed so that the metal level that must remove is connected to each other by metal vias (vias), and behind the anisotropic Si oxide etching step before the edge of these metal levels process, outside being exposed to.Thus this metal-oxide storehouse (5) is separated into several groups, makes the group of the superiors be used as top cover network structure (4) use.In the 1st (a) figure, show two groups of metal-oxide storehouses.Wherein first group is the metal-oxide storehouse that is denoted as (5), and second group then for being denoted as the network structure of (4).
Because the design of this metal-oxide storehouse (5) (and this wire netting (4)), the present invention can produce resilient material layer, is suspended in this crystal circle structure.This elastomeric layer can be exposed or sealing; The metal level number of plies that this elastomeric layer comprised can have different choice; The thickness of this elastomeric layer and intensity also can have different choice; And the spatial altitude between any two-layer elastic layer, perhaps elastic layer and top cover network structure or and substrate between spatial altitude, also different choice can be arranged.
Handle this wafer once again, to seal this top cover wire netting (4) once again.This two degree sealing technology can produce the PECVD film at this by the vapour deposition mode above the top cover wire netting (4) and at this protective layer (6) and above this electrode slice (3); or sealant (7), for example can be the thin polymer film that material is Teflon, Parylene or the like.Thereafter, produce the electric contact to this device if desired, (reactive ion etching (reactive ion etching) technology is carried out electrode opening also can optionally to select photoetching process or RIE for use.But this step is also inessential, for example at passive type RFID device, promptly need not.Made structural section figure is shown in the 1st (b) figure.
Flexible for single unit system is had, so in the front of this wafer (front side), form a polymeric layer (8) in sealing layer (7) top, this polymeric layer (8) is for example with polyimides (polyimide), and materials such as Teflon and Parylene form.Use traditional handicraft to handle this structure, make transducer region and/or this electrode slice region expose out thereafter.Its way can for example be available photoetching process and RIE technology, and in order to etching off sealant (7), and polymeric layer (8) that should the front is positioned at the zone at electrode slice and transducer place.Again this structural engagement arrived carrier wafer (not shown) on thereafter.The structure of gained is promptly shown in the 1st (c) figure.
In next step, remove back side silicon substrate (1) with grinding technics, stay extremely thin substrate layer, usually about about 50 μ m, so that electronic installation is without prejudice.Again with Wet-type etching, RIE/ electric paste etching or vapor phase etchant step, further remove this remaining thin-layer silicon substrate (1) thereafter.Be embedded in oxide skin(coating) in the metal-oxide layer (10) promptly as the effect of etching stopping layer.Thereafter, the back side is covered with another polymeric layer (9), this back polymer layer (9) can be the material identical or different with the front polymeric layer.Made structural section figure is shown in the 1st (c) figure.At last, flexible wafer is taken off by carrier wafer, this step can be carried out before or after it cuts into crystal grain.
The 2nd (a) represents some steps that preparation method second embodiment of the flexible transducer unit according to the present invention is comprised to 2 (c) figure.In each figure, scheme shown identical assembly with the 1st (a) to 1 (c), be marked with identical numbering.Wherein, the sectional view of the 2nd (a) figure expression sensor construction, this sensor construction comprises: a silicon substrate (1); Metal-oxide layer (10); Plain conductor (2) is attached to electrode (3), and both all are embedded in the metal-oxide layer (10); Wire netting (4) is exposed out by metal-oxide layer (10); And protective layer (6), the front of covering wafer.
This structure is to produce circuit (2) and wire netting (4) on the SOI wafer with traditional IC technology in the preparation.Cover the zone except that this transducer region of crystal column surface with photoetching process.Use first-class tropism's Si oxide etch process discharging wire netting (4), and below reaching polysilicon layer (10a), or stop when reaching silicon substrate (1) surperficial.In this step, also may discharge other structure sheaf.If polysilicon layer (10a) is wherein arranged, the sensor construction of gained can use the electrode of polysilicon layer as transducer.
Handle wafer once again, with top pressure closure wire netting (4).This two degree sealings step can be carried out in vapor coating, to produce PECVD film or thin polymer film, as sealant (7).The polymer that can use comprises Teflon, Parylene etc.If this transducer must provide electric contact to this device on using, also can be if necessary in selecting photoetching process or RIE technology thereafter for use, to form electrode opening.If this structure will be used as passive type RFID device, then need not pass through this step.The structure of gained, sectional view is shown in the 2nd (b) figure.
Flexible for single unit system is had, form polymeric layer (8) in the front of wafer, this polymeric layer (8) is for example with polyimides, and materials such as Teflon or Parylene form.Use traditional handicraft to handle this structure, make this transducer region and/or electrode slice region exposed outside thereafter.Its way can be for example for photoetching process and the RIE technology of selecting for use, in order to etching off sealant (7), and polymeric layer (8) that should the front is positioned at the zone at electrode slice and transducer place.Again this structural engagement arrived carrier wafer (not shown) on thereafter.The structure of gained is promptly shown in the 2nd (c) figure.
In next step, remove back side silicon substrate (1) with grinding technics, stay extremely thin substrate layer, usually about about 50 μ m, so that this electronic installation is without prejudice.Again with Wet-type etching, RIE/ electric paste etching or vapor phase etchant step, further remove this remaining thin-layer silicon substrate (1) thereafter.Be embedded in oxide skin(coating) in the metal-oxide layer (10) promptly as the effect of etching stopping layer.Thereafter, the back side is covered with another polymeric layer (9), this back polymer layer (9) can be the material identical or different with the front polymeric layer.Made structural section figure is shown in the 2nd (c) figure.At last, flexible wafer is taken off by carrier wafer, this step can be carried out before or after it cuts into crystal grain.
The 3rd (a) represents some steps that preparation method the 3rd embodiment of the flexible transducer unit according to the present invention is comprised to 3 (c) figure.In each figure, scheme shown identical assembly with the 2nd (a) to 2 (c), be marked with identical numbering.Wherein, the sectional view of the 3rd (a) figure expression sensor construction, this sensor construction comprises: silicon substrate (1); Metal-oxide layer (10); Plain conductor (2) is attached to electrode (3), and both all are embedded in the metal-oxide layer (10); Wire netting (4) is exposed out by metal-oxide layer (10); And protective layer (6), the front of covering wafer.
This structure is to produce circuit (2) and wire netting (4) on the SOI wafer with traditional IC technology in the preparation.Cover the zone except that the transducer region of crystal column surface with photoetching process.Use first-class tropism's Si oxide etch process, discharging wire netting (4), and on the surface that reaches (underneath) silicon substrate (1) below this, or stop when reaching this silicon substrate (1) surperficial.In this step, also may discharge other structure sheaf.Then with this sensor construction with the combining an of anisotropic etching and isotropic etching, handle, in silicon substrate (1), to form undercut (1a).Because the existence of this undercut (1a), the existing housing depth in the back side of wire netting (4) can not be confined to the thickness of metal-oxide layer (10).
Handle wafer once again, with top pressure closure wire netting (4).This two degree sealings step can be carried out in vapor coating, to produce PECVD film or thin polymer film, as sealant (7).The polymeric material that can use comprises Teflon, Parylene etc.If transducer must provide electric contact to this device on using, also can be if necessary in selecting photoetching process or RIE technology thereafter for use, to form electrode opening.If this structure will be used as passive type RFID device, then need not pass through this step.The structure of gained, sectional view is shown in the 3rd (b) figure.
Flexible for single unit system is had, in the front of this wafer, with for example polyimides, materials such as Teflon or Parylene form a polymeric layer (8).Use traditional handicraft to handle this structure, make this transducer region and/or this electrode slice region exposed outside thereafter.Its way can be for example by available photoetching process and RIE technology, etching off sealant (7), and positive polymeric layer (8) is positioned at the zone at electrode slice and transducer place.Thereafter again with this structural engagement to a carrier wafer (not shown).The structure of gained is promptly shown in the 3rd (c) figure.
In next step, remove back side silicon substrate (1) with grinding technics, stay extremely thin substrate layer, usually about about 50 μ m, so that this electronic installation is without prejudice.Again with Wet-type etching, RIE/ electric paste etching or vapor phase etchant step, further remove this leave over thin-layer silicon substrate (1) thereafter.Be embedded in oxide skin(coating) in the metal-oxide layer (10) promptly as the effect of etching stopping layer.Thereafter, the back side is covered with another polymeric layer (9), this back polymer layer (9) can be the material identical or different with the front polymeric layer.Made structural section figure is shown in the 3rd (c) figure.At last, flexible wafer is taken off by carrier wafer, this step can be carried out before or after it cuts into crystal grain.
The 4th (a) represents some steps that preparation method the 4th embodiment of the flexible transducer unit according to the present invention is comprised to 4 (c) figure.In each figure, scheme shown identical assembly with the 2nd (a) to 2 (c), be marked with identical numbering.Wherein, the sectional view of the 4th (a) figure expression sensor construction, this sensor construction comprises: silicon substrate (1); Metal-oxide layer (10); Plain conductor (2) is attached to electrode (3), and both all are embedded in the metal-oxide layer (10); Wire netting (4) is exposed out by metal-oxide layer (10); And protective layer (6), the front of covering wafer.This sensor construction is to make with embodiment 2 identical or similar methods.
In the present embodiment, its processing step is similar to embodiment 2, and difference is that front polymeric layer (8) is not discharge also as yet at wire netting (4) promptly to form before the overline sealing.
The 4th (a) figure shows that front polymeric layer (8) is promptly to form before wire netting (4) discharges.The zone of sheet metal (3) and transducer (wire netting) is exposed to the outside after the traditional handicraft of necessity.In the 4th (b) figure, wire netting (4) is to use the method identical with embodiment 2 to discharge.Its after-applied sealant (7) is to cover wire netting (4) and front polymeric layer (8).In the 4th (c) figure, back side silicon substrate (1) remove through etching not need thickness, employed method and embodiment 2 with.At last, another polymeric layer (9) is applied to wafer rear.
The 5th figure represents the sectional view of the sensor construction that preparation method the 5th embodiment of the flexible transducer unit according to the present invention is finished.In the 5th figure, scheme shown identical assembly with the 2nd (a) to 2 (c), be marked with identical numbering.As shown in the figure, comprise second contact chip (3a) according to the prepared sensor construction of present embodiment, it will expose out from the rear side of wafer.Therefore, roughly the same shown in its technology and the embodiment 2 in the present embodiment, difference is that second contact chip (3a) prepares when this sensor construction of preparation, and second contact chip (3a) is to expose out from metal-oxide layer (10).
In the preparation, its step comprises: after wire netting (4) has discharged and sealed once again again, this back side silicon substrate (1) is removed, this silicon-oxide skin(coating) of burying underground is removed, again inferior thin layer silicon layer and this silicon-oxide skin(coating) are removed, make thus in the middle of this metal level, the metal level that has preset this contact chip (3a) can be exposed out by the rear side of wafer.Form back polymer layer (9),, make contact chip (3a) expose out then with the electrode opening step thereafter.Carry out die separation at last.
The 6th figure represents to finish according to the technology of sixth embodiment of the invention, comprises the sectional view of a plurality of sensor constructions.In the 6th figure, scheme shown identical assembly with the 2nd (a) to 2 (c), be marked with identical numbering.
In the present embodiment, the technology sensor unit that relates to be arranged in the polymeric sandwich structure separates in advance.Its practice is that the oxide skin(coating) that will be positioned at cutting line area (1d) in its front is removed fully, till substrate (1) when this sensor construction of preparation.And remove the oxide skin(coating) that is positioned at line of cut fully, and if use the technology of embodiment 1, then can for example use simultaneously with non-directional formula etch process at the preparation sensor construction, remove silicon-oxide skin(coating) and this thin silicone layer.If but use the technology of embodiment 3, the method for then removing line of cut can use non-directional formula oxide to remove and directional type silicon is removed the combination of technology, is realized.And its wire netting discharges and sealing technology again, and front polymeric layer depositing operation is then identical with embodiment 1-3.Then back substrate (1) is removed, and silicon-oxide skin(coating) of burying underground also given remove.Its method is also identical with embodiment 1-3.Then be back polymer deposition and sheet metal opening step subsequently, produce the wafer that comprises a plurality of sensor units that separated in advance thus.
This wafer enters separating step subsequently, and (1d) cuts off by line of cut.Owing to have only polymeric layer (8) to be deposited in this line of cut (1d), in the separating step of crystal grain, the crackle of silicon and oxide expansion (crack propagation) can significantly reduce, even can prevent.
The present invention showed by its preferred embodiment and explanation as above, those skilled in the art can learn, above-mentioned or other to the variation that the present invention did, under the situation that does not deviate from spirit of the present invention, also all belong to scope of the present invention.
For example, in the aftertreatment technology of this sensor construction, the back polymer book jacket may not need in some special case, for example when the transducer of being finished will be used for using under precision control and oligosaprobic operating environment, or when this flexible crystalline grain device has other book jacket step to accompany after its intended purpose, promptly be like this.
In addition, when this transducer is tight being sealed in the cavity, and integrated or with electronic circuit in wafer level packaging technology not with electronic circuit when integrated, with substrate (1) be thinned down to foot make this substrate (1) have flexible technology may and unnecessary.
Claims (96)
1. one kind prepares the method for flexible transducer unit by sensor construction, and described sensor construction comprises: substrate; The metal-oxide layer; At least one network structure, it is arranged in described metal-oxide layer; And electrical wire, comprising at least one first contact chip, it is arranged in described metal-oxide layer; Described method comprises the following steps:
The described metal-oxide layer of etching is to discharge described network structure;
On described network structure, form a sealant;
On described metal-oxide layer, form one first flexible material layers; And
Remove the suitable thickness of described substrate, this thickness of removing is enough to make described sensor construction tool flexible.
2. the method for claim 1, wherein said substrate thickness is to remove with etching.
3. the method for claim 1, wherein said substrate thickness is to remove with a grinding steps.
4. the method for claim 1, wherein said substrate is to remove in fact fully.
5. the method for claim 1 also comprises adding one second flexible material layers in the step of described substrate back (backside).
6. method as claimed in claim 4, also be included in remove described substrate after, add the step of second flexible material layers on described exposed metal-oxide layer.
7. the method for claim 1, also be included in form described first flexible material layers after, make the contact chip of described electrical wire be exposed to outer step.
8. method as claimed in claim 5, also be included in the step that adds described second flexible material layers after, make second contact chip of described electrical wire be exposed to outer step.
9. method as claimed in claim 6, also be included in the step of described second flexible material layers of described adding after, make one second contact chip of described electrical wire be exposed to outer step.
10. the method for claim 1 also comprises and separates described sensor construction, to form the step of crystal grain.
11. the method for claim 1, wherein said substrate comprises silicon.
12. the method for claim 1, wherein said network structure are a wire netting.
13. method as claimed in claim 12, wherein said network structure are a wire netting that makes according to CMOS technology.
14. the method for claim 1, wherein said substrate also comprises the metal-oxide storehouse, and discharges described cancellated step, comprises the step that discharges described metal-oxide storehouse.
15. method as claimed in claim 14, wherein when the described metal-oxide storehouse of preparation, each metal level of the described metal-oxide layer that will remove is interlinked by the metal vias (vias) in described metal-oxide layer, and outside the edge of described metal level is exposed to after described network structure release steps.
16. the method for claim 1 wherein discharges described cancellated step and comprises that the described metal-oxide layer of etching is positioned at the zone at described network structure place to wait etching of tropism's Si oxide.
17. method as claimed in claim 16, wherein said release steps wait tropism's Si oxide etching step, when reaching prepared in described metal-oxide layer lower floor polysilicon layer, stop.
18. method as claimed in claim 16, wherein said release steps wait tropism's Si oxide etching step, when reaching described silicon substrate surperficial, stop.
19. method as claimed in claim 16, the described cancellated step of wherein said release also comprise with anisotropic etching and wait that tropism's silicon is etched to combine the described sensor construction of etching, to produce the step of undercut region at described substrate.
20. the method for claim 1, wherein sealing described cancellated step once again is to carry out in gas phase, to produce the PECVD film.
21. the method for claim 1, wherein sealing described cancellated step once again is to carry out in gas phase, to produce a thin polymer film.
22. method as claimed in claim 21, wherein said thin polymer film are to be selected from a kind of among Teflon and the Parylene.
23. the method for claim 1, wherein said first flexible material layers comprises a polymeric layer.
24. method as claimed in claim 23, wherein said thin polymer film are to be selected from polyimides, a kind of among Parylene and the Teflon.
25. the method for claim 1, wherein said second flexible material layers comprises a polymeric layer.
26. method as claimed in claim 25, wherein said thin polymer film are to be selected from polyimides, a kind of among Parylene and the Teflon.
27. the method for claim 1, also be included in described metal-oxide layer go up to form described first flexible layers after, described sensor construction is joined to the step of a carrier wafer.
28. method as claimed in claim 5, after also being included in described first flexible layers of upward formation of described metal-oxide layer, join described sensor construction to carrier wafer, and after forming described second flexible layers on the described exposed metal-oxide layer, the step of removing described carrier wafer.
29. method as claimed in claim 6, after also being included in described first flexible layers of upward formation of described metal-oxide layer, join described sensor construction to a carrier wafer, and after forming described second flexible layers on the described exposed metal-oxide layer, the step of removing described carrier wafer.
30. the method for claim 1, the step of wherein removing described substrate thickness comprises that rough etch carves the step that described substrate and close etching are carved described substrate, wherein said close etching is carved and is included in described rough etch after quarter, be selected from following a kind of engraving method with one, remove the step of the remaining part of described substrate: Wet-type etching, RIE/ electric paste etching, and vapor phase etchant.
31. the method for claim 1, wherein said metal-oxide layer is positioned at the part of predetermined line of cut, all removes when making described sensor construction.
32. one kind prepares the method for flexible transducer unit by sensor construction, described sensor construction comprises: substrate; The metal-oxide layer; At least one network structure, it is arranged in described metal-oxide layer; And electrical wire, comprise at least one first contact chip, be arranged in described metal-oxide layer; Described method comprises the following steps:
On described metal-oxide layer, form first flexible material layers;
Exposed described metal-oxide layer is positioned at the zone at described metal structure place;
The described metal-oxide layer of etching is to discharge described network structure;
On described network structure, form a sealant; And
Remove the suitable thickness of described substrate, this thickness of removing is enough to make described sensor construction tool flexible.
33. method as claimed in claim 32, wherein said substrate is to remove in fact fully.
34. method as claimed in claim 33, also be included in remove described substrate after, add the step of one second flexible material layers on described exposed metal-oxide layer.
35. method as claimed in claim 32 also comprises adding one second flexible material layers in the step of described substrate back.
36. method as claimed in claim 32, also be included in form described first flexible material layers after, make the contact chip of described electrical wire be exposed to outer step.
37. method as claimed in claim 36, also be included in the step that adds described second flexible material layers after, make second contact chip of described electrical wire be exposed to outer step.
38. method as claimed in claim 32 also comprises and separates described sensor construction, to form the step of crystal grain.
39. method as claimed in claim 32, the wire netting of wherein said network structure for making according to CMOS technology.
40. method as claimed in claim 32, wherein said substrate also comprises the metal-oxide storehouse, and discharges described cancellated step and also comprise the step that discharges described metal-oxide storehouse.
41. method as claimed in claim 40, when wherein said metal-oxide storehouse prepares, each metal level of the described metal-oxide layer that will remove is interlinked by the metal vias in described metal-oxide layer, and outside the edge of described metal level is exposed to after described network structure release steps.
42. method as claimed in claim 32 wherein discharges described cancellated step and comprises that the described metal-oxide layer of etching is positioned at the zone at described network structure place to wait etching of tropism's Si oxide.
43. method as claimed in claim 42, wherein said release steps wait tropism's Si oxide etching step, when reaching the lower floor polysilicon layer of preparation in described metal-oxide layer, stop.
44. method as claimed in claim 42, wherein said release steps wait tropism's Si oxide etching step, when reaching described silicon substrate surperficial, stop.
45. also comprising with anisotropic etching, method as claimed in claim 42, the described cancellated step of wherein said release carve described sensor construction, to produce the step of undercut region at described substrate with waiting etched combination of tropism's silicon.
46. method as claimed in claim 32, wherein sealing described cancellated step once again is to carry out in gas phase, to produce the PECVD film.
47. method as claimed in claim 32, wherein sealing described cancellated step once again is to carry out in gas phase, to produce thin polymer film.
48. method as claimed in claim 47, wherein said thin polymer film are to be selected from a kind of among Teflon and the Parylene.
49. method as claimed in claim 32, wherein said first flexible material layers comprises a polymeric layer.
50. method as claimed in claim 49, wherein said thin polymer film are to be selected from polyimides, a kind of among Parylene and the Teflon.
51. method as claimed in claim 32, also be included in described metal-oxide layer go up to form described first flexible layers after, described sensor construction is joined to the step of a carrier wafer.
52. method as claimed in claim 34, after also being included in described first flexible layers of upward formation of described metal-oxide layer, join described sensor construction to a carrier wafer, and after forming described second flexible layers on the described exposed metal-oxide layer, the step of removing described carrier wafer.
53. method as claimed in claim 35, after also being included in described first flexible layers of upward formation of described metal-oxide layer, join described sensor construction to a carrier wafer, and after forming described second flexible layers on the described exposed metal-oxide layer, the step of removing described carrier wafer.
54. method as claimed in claim 32, wherein said step of removing described substrate thickness comprises that rough etch carves the step that described substrate and close etching are carved described substrate, wherein said close etching is carved and is included in described rough etch after quarter, to be selected from following a kind of engraving method, remove the step of the remaining part of described substrate: Wet-type etching, RIE/ electric paste etching, and vapor phase etchant.
55. method as claimed in claim 32, wherein said metal-oxide layer is positioned at the part of predetermined line of cut, is all to remove when making described sensor construction.
56. method as claimed in claim 32, wherein said second flexible material layers comprises a polymeric layer.
57. method as claimed in claim 56, wherein said thin polymer film are to be selected from polyimides, a kind of among Parylene and the Teflon.
58. a sensor construction comprises one first flexible layers; One metal-oxide layer, its first surface with described first flexible layers is connected; Electrical wire is connected with one first contact chip, and both all are embedded in the described metal-oxide layer; One network structure, it is suspended in the described metal-oxide layer; And a sealant, it covers described network structure at least.
59. sensor construction as claimed in claim 58 comprises that also one retains substrate, it is connected with one second side of described metal-oxide layer.
60. sensor construction as claimed in claim 59 also comprises one second flexible layers, it is connected with one second side of described retention substrate at described metal-oxide layer.
61. sensor construction as claimed in claim 58 also comprises one second flexible layers, it is connected with one second side of described metal-oxide layer.
62. sensor construction as claimed in claim 58 also comprises a metal-oxide storehouse, it is suspended in the described metal-oxide layer.
63. sensor construction as claimed in claim 62, wherein the metal level in described metal-oxide storehouse is to be connected to each other by the metal vias in described metal-oxide layer, and the edge of described metal level is for exposed.
64. sensor construction as claimed in claim 62, the contained metal level number of plies of wherein said metal-oxide storehouse be from 1 to the total number of plies of described metal-oxide layer institute's metal-containing layer one.
65. sensor construction as claimed in claim 58 also comprises a polysilicon layer, extends in parallel with described network structure, and keeps a distance.
66. sensor construction as claimed in claim 58, wherein said first contact chip are to be exposed out by described first flexible layers.
67. sensor construction as claimed in claim 60 also comprises one second contact chip, is connected with described lead, and is exposed out by described second flexible layers.
68. sensor construction as claimed in claim 61 also comprises one second contact chip, is connected with described lead, and is exposed out by described second flexible layers.
69. sensor construction as claimed in claim 58, wherein said sealant also cover described first flexible layers.
70. sensor construction as claimed in claim 58, wherein said network structure are a wire netting.
71. sensor construction as claimed in claim 58, the material of wherein said first flexible material layers be for being selected from polyimides, at least a among Parylene and the Teflon.
72. sensor construction as claimed in claim 60, the material of wherein said second flexible material layers be for being selected from polyimides, at least a among Parylene and the Teflon.
73. sensor construction as claimed in claim 61, the material of wherein said second flexible material layers be for being selected from polyimides, at least a among Parylene and the Teflon.
74. sensor construction as claimed in claim 58, wherein said sealant are a PECVD film.
75. sensor construction as claimed in claim 58, wherein said sealant are a thin polymer film.
76. as the described sensor construction of claim 75, the polymeric material of wherein said sealant is to be selected from least a among Parylene and the Teflon.
77. the array of a flexible transducer unit, wherein each sensor unit respectively comprises: one first flexible layers; One metal-oxide layer, its first surface with described first flexible layers is connected; Electrical wire, it is connected with one first contact chip, and both all are embedded in the described metal-oxide layer; One network structure, it is suspended in the described metal-oxide layer; And a sealant, it covers described network structure at least.
78. as the described sensor unit array of claim 77, wherein each sensor unit comprises that also one retains substrate, is connected with one second side of described metal-oxide layer.
79. as the described sensor unit array of claim 78, wherein each sensor unit also comprises one second flexible layers, is connected with one second side of described retention substrate at described metal-oxide layer.
80. as the described sensor unit array of claim 77, wherein each sensor unit also comprises one second flexible layers, is connected with one second side of described metal-oxide layer.
81. as the described sensor unit array of claim 77, wherein each sensor unit also comprises a metal-oxide storehouse, is suspended in the described metal-oxide layer.
82. as the described sensor unit array of claim 81, wherein the metal level in described metal-oxide storehouse is to be connected to each other by the metal vias in described metal-oxide layer, and the edge of described metal level is for exposed.
83. as the described sensor unit array of claim 81, the contained metal level number of plies of wherein said metal-oxide storehouse be from 1 to the total number of plies of described metal-oxide layer institute's metal-containing layer one.
84. as the described sensor unit array of claim 77, wherein each sensor unit also comprises a polysilicon layer, extends in parallel with described network structure, and keeps a distance.
85. as the described sensor unit array of claim 77, wherein said first contact chip is to be exposed out by described first flexible layers.
86. as the described sensor unit array of claim 79, wherein each sensor unit also comprises one second contact chip, it is connected with described lead, and is exposed out by described second flexible layers.
87. as the described sensor unit array of claim 80, wherein each sensor unit also comprises one second contact chip, it is connected with described lead, and is exposed out by described second flexible layers.
88. as the described sensor unit array of claim 77, wherein said sealant also covers described first flexible layers.
89. as the described sensor unit array of claim 77, wherein said network structure is a wire netting.
90. as the described sensor unit array of claim 77, the material of wherein said first flexible material layers is for being selected from polyimides, at least a among Parylene and the Teflon.
91. as the described sensor construction of claim 79, the material of wherein said second flexible material layers is for being selected from polyimides, at least a among Parylene and the Teflon.
92. as the described sensor unit array of claim 80, the material of wherein said second flexible material layers is for being selected from polyimides, at least a among Parylene and the Teflon.
93. as the described sensor unit array of claim 77, wherein said sealant is a PECVD film.
94. as the described sensor unit array of claim 77, wherein said sealant is a thin polymer film.
95. as the described sensor unit array of claim 94, the polymeric material of wherein said sealant is to be selected from least a among Parylene and the Teflon.
96. as the described sensor unit array of claim 77, wherein each described sensor unit is to separate with described first flexible layers.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/253,806 | 2008-10-17 | ||
| US12/253,806 US20090139749A1 (en) | 2007-10-18 | 2008-10-17 | Method For The Preparation Of A Flexible Transducer Unit, The Flexible Transducer Unit So Prepared And An Array Containing Such Flexible Transducer Units |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101728303A true CN101728303A (en) | 2010-06-09 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200910178167A Pending CN101728303A (en) | 2008-10-17 | 2009-10-15 | Method for the preparation of a flexible transducer unit, the flexible transducer unit so prepared and an array containing such flexible transducer units |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2010131744A (en) |
| CN (1) | CN101728303A (en) |
| TW (1) | TW201017741A (en) |
-
2009
- 2009-10-08 TW TW98134198A patent/TW201017741A/en unknown
- 2009-10-13 JP JP2009236560A patent/JP2010131744A/en active Pending
- 2009-10-15 CN CN200910178167A patent/CN101728303A/en active Pending
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| TW201017741A (en) | 2010-05-01 |
| JP2010131744A (en) | 2010-06-17 |
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